JPWO2022085433A1 - - Google Patents

Info

Publication number
JPWO2022085433A1
JPWO2022085433A1 JP2021560258A JP2021560258A JPWO2022085433A1 JP WO2022085433 A1 JPWO2022085433 A1 JP WO2022085433A1 JP 2021560258 A JP2021560258 A JP 2021560258A JP 2021560258 A JP2021560258 A JP 2021560258A JP WO2022085433 A1 JPWO2022085433 A1 JP WO2022085433A1
Authority
JP
Japan
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP2021560258A
Other languages
Japanese (ja)
Other versions
JP7767925B2 (ja
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Publication of JPWO2022085433A1 publication Critical patent/JPWO2022085433A1/ja
Application granted granted Critical
Publication of JP7767925B2 publication Critical patent/JP7767925B2/ja
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/85—Packages
    • H10H20/857—Interconnections, e.g. lead-frames, bond wires or solder balls
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
    • H10D86/60—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs wherein the TFTs are in active matrices
    • G—PHYSICS
    • G09—EDUCATION; CRYPTOGRAPHY; DISPLAY; ADVERTISING; SEALS
    • G09F—DISPLAYING; ADVERTISING; SIGNS; LABELS OR NAME-PLATES; SEALS
    • G09F9/00—Indicating arrangements for variable information in which the information is built-up on a support by selection or combination of individual elements
    • G—PHYSICS
    • G09—EDUCATION; CRYPTOGRAPHY; DISPLAY; ADVERTISING; SEALS
    • G09F—DISPLAYING; ADVERTISING; SIGNS; LABELS OR NAME-PLATES; SEALS
    • G09F9/00—Indicating arrangements for variable information in which the information is built-up on a support by selection or combination of individual elements
    • G09F9/30—Indicating arrangements for variable information in which the information is built-up on a support by selection or combination of individual elements in which the desired character or characters are formed by combining individual elements
    • G—PHYSICS
    • G09—EDUCATION; CRYPTOGRAPHY; DISPLAY; ADVERTISING; SEALS
    • G09F—DISPLAYING; ADVERTISING; SIGNS; LABELS OR NAME-PLATES; SEALS
    • G09F9/00—Indicating arrangements for variable information in which the information is built-up on a support by selection or combination of individual elements
    • G09F9/30—Indicating arrangements for variable information in which the information is built-up on a support by selection or combination of individual elements in which the desired character or characters are formed by combining individual elements
    • G09F9/33—Indicating arrangements for variable information in which the information is built-up on a support by selection or combination of individual elements in which the desired character or characters are formed by combining individual elements being semiconductor devices, e.g. diodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/01—Manufacture or treatment
    • H10D86/021—Manufacture or treatment of multiple TFTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
    • H10D86/451—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs characterised by the compositions or shapes of the interlayer dielectrics
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/01—Manufacture or treatment
    • H10H20/036—Manufacture or treatment of packages
    • H10H20/0362—Manufacture or treatment of packages of encapsulations
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/01—Manufacture or treatment
    • H10H20/036—Manufacture or treatment of packages
    • H10H20/0364—Manufacture or treatment of packages of interconnections
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/85—Packages
    • H10H20/8506—Containers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/85—Packages
    • H10H20/852—Encapsulations
    • H10H20/853—Encapsulations characterised by their shape
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/85—Packages
    • H10H20/852—Encapsulations
    • H10H20/854—Encapsulations characterised by their material, e.g. epoxy or silicone resins
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/85—Packages
    • H10H20/855—Optical field-shaping means, e.g. lenses
    • H10H20/856—Reflecting means
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W70/00—Package substrates; Interposers; Redistribution layers [RDL]
    • H10W70/01—Manufacture or treatment
    • H10W70/05—Manufacture or treatment of insulating or insulated package substrates, or of interposers, or of redistribution layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W70/00—Package substrates; Interposers; Redistribution layers [RDL]
    • H10W70/60—Insulating or insulated package substrates; Interposers; Redistribution layers
    • H10W70/611—Insulating or insulated package substrates; Interposers; Redistribution layers for connecting multiple chips together
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W70/00—Package substrates; Interposers; Redistribution layers [RDL]
    • H10W70/60—Insulating or insulated package substrates; Interposers; Redistribution layers
    • H10W70/67—Insulating or insulated package substrates; Interposers; Redistribution layers characterised by their insulating layers or insulating parts
    • H10W70/68—Shapes or dispositions thereof
    • H10W70/685—Shapes or dispositions thereof comprising multiple insulating layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W90/00—Package configurations
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W90/00—Package configurations
    • H10W90/401—Package configurations characterised by multiple insulating or insulated package substrates, interposers or RDLs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
    • H10D86/441—Interconnections, e.g. scanning lines
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W70/00—Package substrates; Interposers; Redistribution layers [RDL]
    • H10W70/01—Manufacture or treatment
    • H10W70/05—Manufacture or treatment of insulating or insulated package substrates, or of interposers, or of redistribution layers
    • H10W70/08—Manufacture or treatment of insulating or insulated package substrates, or of interposers, or of redistribution layers by depositing layers on the chip or wafer, e.g. "chip-first" RDLs
    • H10W70/09—Manufacture or treatment of insulating or insulated package substrates, or of interposers, or of redistribution layers by depositing layers on the chip or wafer, e.g. "chip-first" RDLs extending onto an encapsulation that laterally surrounds the chip or wafer, e.g. fan-out wafer level package [FOWLP] RDLs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W70/00—Package substrates; Interposers; Redistribution layers [RDL]
    • H10W70/60—Insulating or insulated package substrates; Interposers; Redistribution layers

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Theoretical Computer Science (AREA)
  • Devices For Indicating Variable Information By Combining Individual Elements (AREA)
  • Electroluminescent Light Sources (AREA)
  • Manufacturing & Machinery (AREA)
  • Led Device Packages (AREA)
JP2021560258A 2020-10-23 2021-10-05 表示装置および表示装置の製造方法 Active JP7767925B2 (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2020177903 2020-10-23
JP2020177903 2020-10-23
PCT/JP2021/036788 WO2022085433A1 (ja) 2020-10-23 2021-10-05 表示装置および表示装置の製造方法

Publications (2)

Publication Number Publication Date
JPWO2022085433A1 true JPWO2022085433A1 (https=) 2022-04-28
JP7767925B2 JP7767925B2 (ja) 2025-11-12

Family

ID=81289900

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2021560258A Active JP7767925B2 (ja) 2020-10-23 2021-10-05 表示装置および表示装置の製造方法

Country Status (6)

Country Link
US (1) US12604529B2 (https=)
JP (1) JP7767925B2 (https=)
KR (1) KR20230093237A (https=)
CN (1) CN115956299A (https=)
TW (1) TWI896787B (https=)
WO (1) WO2022085433A1 (https=)

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN117080346A (zh) * 2022-12-30 2023-11-17 天马新型显示技术研究院(厦门)有限公司 发光元件封装结构、显示面板、显示装置以及制备方法
JP7833046B2 (ja) * 2023-04-05 2026-03-18 大日本印刷株式会社 金属端子用接着性フィルム及びその製造方法、金属端子用接着性フィルム付き金属端子、蓄電デバイス用外装材、蓄電デバイス用外装材と金属端子用接着性フィルムを備えるキット、並びに、蓄電デバイス及びその製造方法
WO2024210217A1 (ja) * 2023-04-05 2024-10-10 大日本印刷株式会社 金属端子用接着性フィルム及びその製造方法、金属端子用接着性フィルム付き金属端子、蓄電デバイス用外装材、蓄電デバイス用外装材と金属端子用接着性フィルムを備えるキット、並びに、蓄電デバイス及びその製造方法
TWI826302B (zh) * 2023-04-10 2023-12-11 友達光電股份有限公司 可拉伸顯示裝置
KR20240163930A (ko) * 2023-05-11 2024-11-19 엘지전자 주식회사 발광 소자 패키지, 이를 이용한 디스플레이 장치 및 그 제조 방법
KR20250009141A (ko) * 2023-07-10 2025-01-17 삼성전자주식회사 수직 전극 구조를 가지는 디스플레이 장치 및 그 제조 방법

Citations (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2013180258A1 (ja) * 2012-05-31 2013-12-05 コニカミノルタ株式会社 発光装置用封止材、及びこれを用いた発光装置、並びに発光装置の製造方法
JP2015132688A (ja) * 2014-01-10 2015-07-23 大日本印刷株式会社 表示装置用前面板および表示装置
JP2016197668A (ja) * 2015-04-03 2016-11-24 大日本印刷株式会社 Ｌｅｄ素子用のフレキシブル多層回路基板及びそれを用いたｌｅｄドットマトリックス表示装置
KR101718652B1 (ko) * 2016-03-11 2017-03-22 한국과학기술원 무전사 플렉서블 수직형 발광다이오드 및 이의 제작 방법
JP2017116904A (ja) * 2015-12-21 2017-06-29 株式会社ジャパンディスプレイ 表示装置
JP2019016631A (ja) * 2017-07-03 2019-01-31 大日本印刷株式会社 Ｌｅｄモジュールの製造方法
JP2019045865A (ja) * 2015-09-30 2019-03-22 東レ株式会社 ネガ型感光性樹脂組成物、硬化膜、硬化膜を具備する素子及び表示装置、並びにその製造方法
CN210403726U (zh) * 2019-09-18 2020-04-24 厦门三安光电有限公司 发光二极管封装组件

Family Cites Families (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR101202983B1 (ko) * 2005-09-13 2012-11-20 엘지디스플레이 주식회사 반사투과형 액정표시장치용 어레이 기판 및 그 제조방법
WO2010002182A2 (en) * 2008-06-30 2010-01-07 Kolon Industries, Inc. Plastic substrate and device including the same
JP5642739B2 (ja) * 2012-07-27 2014-12-17 富士フイルム株式会社 染料化合物及びその製造方法、着色硬化性組成物、着色硬化膜、カラーフィルタ及びその製造方法、並びに表示装置
JP2016014929A (ja) * 2014-06-30 2016-01-28 富士フイルム株式会社 導電性フイルム、これを備える表示装置及び導電性フイルムの評価方法
JP6307372B2 (ja) * 2014-07-03 2018-04-04 富士フイルム株式会社 導電性フイルム、これを備える表示装置及び導電性フイルムの評価方法
JP6743693B2 (ja) * 2015-03-11 2020-08-19 東レ株式会社 有機ｅｌ表示装置、およびその製造方法
KR102160020B1 (ko) * 2015-07-24 2020-09-25 후지필름 가부시키가이샤 터치 패널용 도전 필름, 터치 패널, 및 터치 패널 부착 표시 장치
JP6661343B2 (ja) * 2015-11-26 2020-03-11 富士フイルム株式会社 転写材料、転写材料の製造方法、積層体、積層体の製造方法、静電容量型入力装置の製造方法、及び、画像表示装置の製造方法
EP3384530A1 (en) 2016-02-18 2018-10-10 Apple Inc. Backplane structure and process for microdriver and micro led
WO2018220932A1 (ja) * 2017-05-30 2018-12-06 シャープ株式会社 半導体モジュール、表示装置、および半導体モジュールの製造方法。
WO2019160199A1 (ko) 2018-02-13 2019-08-22 주식회사 루멘스 다층 연성 회로 기판을 갖는 마이크로 엘이디 모듈
JP6811353B2 (ja) * 2018-02-28 2021-01-13 京セラ株式会社 表示装置、ガラス基板およびガラス基板の製造方法
JP7351306B2 (ja) * 2018-09-04 2023-09-27 Ａｇｃ株式会社 透明表示装置、透明表示装置付きガラス板、透明表示装置付き合わせガラス、および、移動体
JP2020068313A (ja) 2018-10-25 2020-04-30 株式会社ブイ・テクノロジー 発光素子および表示装置の製造方法
JP7601771B2 (ja) 2019-09-18 2024-12-17 泉州三安半導体科技有限公司 発光ダイオードパッケージアセンブリ

Patent Citations (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2013180258A1 (ja) * 2012-05-31 2013-12-05 コニカミノルタ株式会社 発光装置用封止材、及びこれを用いた発光装置、並びに発光装置の製造方法
JP2015132688A (ja) * 2014-01-10 2015-07-23 大日本印刷株式会社 表示装置用前面板および表示装置
JP2016197668A (ja) * 2015-04-03 2016-11-24 大日本印刷株式会社 Ｌｅｄ素子用のフレキシブル多層回路基板及びそれを用いたｌｅｄドットマトリックス表示装置
JP2019045865A (ja) * 2015-09-30 2019-03-22 東レ株式会社 ネガ型感光性樹脂組成物、硬化膜、硬化膜を具備する素子及び表示装置、並びにその製造方法
JP2017116904A (ja) * 2015-12-21 2017-06-29 株式会社ジャパンディスプレイ 表示装置
KR101718652B1 (ko) * 2016-03-11 2017-03-22 한국과학기술원 무전사 플렉서블 수직형 발광다이오드 및 이의 제작 방법
JP2019016631A (ja) * 2017-07-03 2019-01-31 大日本印刷株式会社 Ｌｅｄモジュールの製造方法
CN210403726U (zh) * 2019-09-18 2020-04-24 厦门三安光电有限公司 发光二极管封装组件

Also Published As

Publication number Publication date
US12604529B2 (en) 2026-04-14
JP7767925B2 (ja) 2025-11-12
US20230369271A1 (en) 2023-11-16
KR20230093237A (ko) 2023-06-27
TWI896787B (zh) 2025-09-11
CN115956299A (zh) 2023-04-11
TW202218177A (zh) 2022-05-01
WO2022085433A1 (ja) 2022-04-28

Similar Documents

Publication Publication Date Title
BR112023005462A2 (https=)
BR112023012656A2 (https=)
BR112021014123A2 (https=)
BR112023009656A2 (https=)
BR112022009896A2 (https=)
BR112021017747A2 (https=)
BR112022024743A2 (https=)
BR112022026905A2 (https=)
BR112023011738A2 (https=)
BR112023004146A2 (https=)
BR112023006729A2 (https=)
BR102021018859A2 (https=)
BR102021015500A2 (https=)
BR102021007058A2 (https=)
BR112023016292A2 (https=)
BR112023011610A2 (https=)
BR112023011539A2 (https=)
BR112023008976A2 (https=)
BR102021020147A2 (https=)
BR102021018926A2 (https=)
BR102021018167A2 (https=)
BR102021017576A2 (https=)
BR102021016837A2 (https=)
BR102021016551A2 (https=)
BR102021016375A2 (https=)

Legal Events

Date Code Title Description
A621 Written request for application examination

Free format text: JAPANESE INTERMEDIATE CODE: A621

Effective date: 20240807

A131 Notification of reasons for refusal

Free format text: JAPANESE INTERMEDIATE CODE: A131

Effective date: 20250318

A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20250516

A131 Notification of reasons for refusal

Free format text: JAPANESE INTERMEDIATE CODE: A131

Effective date: 20250715

A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20250910

TRDD Decision of grant or rejection written
A01 Written decision to grant a patent or to grant a registration (utility model)

Free format text: JAPANESE INTERMEDIATE CODE: A01

Effective date: 20250930

A61 First payment of annual fees (during grant procedure)

Free format text: JAPANESE INTERMEDIATE CODE: A61

Effective date: 20251013

R150 Certificate of patent or registration of utility model

Ref document number: 7767925

Country of ref document: JP

Free format text: JAPANESE INTERMEDIATE CODE: R150