JPWO2022084800A1 - - Google Patents
Info
- Publication number
- JPWO2022084800A1 JPWO2022084800A1 JP2022557216A JP2022557216A JPWO2022084800A1 JP WO2022084800 A1 JPWO2022084800 A1 JP WO2022084800A1 JP 2022557216 A JP2022557216 A JP 2022557216A JP 2022557216 A JP2022557216 A JP 2022557216A JP WO2022084800 A1 JPWO2022084800 A1 JP WO2022084800A1
- Authority
- JP
- Japan
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Classifications
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
- G11C11/22—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using ferroelectric elements
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B53/00—Ferroelectric RAM [FeRAM] devices comprising ferroelectric memory capacitors
- H10B53/30—Ferroelectric RAM [FeRAM] devices comprising ferroelectric memory capacitors characterised by the memory core region
-
- G—PHYSICS
- G06—COMPUTING OR CALCULATING; COUNTING
- G06F—ELECTRIC DIGITAL DATA PROCESSING
- G06F12/00—Accessing, addressing or allocating within memory systems or architectures
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
- G11C11/22—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using ferroelectric elements
- G11C11/221—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using ferroelectric elements using ferroelectric capacitors
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
- G11C11/22—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using ferroelectric elements
- G11C11/225—Auxiliary circuits
- G11C11/2259—Cell access
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
- G11C11/22—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using ferroelectric elements
- G11C11/225—Auxiliary circuits
- G11C11/2273—Reading or sensing circuits or methods
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
- G11C11/22—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using ferroelectric elements
- G11C11/225—Auxiliary circuits
- G11C11/2275—Writing or programming circuits or methods
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C5/00—Details of stores covered by group G11C11/00
- G11C5/02—Disposition of storage elements, e.g. in the form of a matrix array
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C5/00—Details of stores covered by group G11C11/00
- G11C5/02—Disposition of storage elements, e.g. in the form of a matrix array
- G11C5/04—Supports for storage elements, e.g. memory modules; Mounting or fixing of storage elements on such supports
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B53/00—Ferroelectric RAM [FeRAM] devices comprising ferroelectric memory capacitors
- H10B53/40—Ferroelectric RAM [FeRAM] devices comprising ferroelectric memory capacitors characterised by the peripheral circuit region
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
- H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
- H10D86/421—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs having a particular composition, shape or crystalline structure of the active layer
- H10D86/423—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs having a particular composition, shape or crystalline structure of the active layer comprising semiconductor materials not belonging to the Group IV, e.g. InGaZnO
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
- H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
- H10D86/60—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs wherein the TFTs are in active matrices
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D30/00—Field-effect transistors [FET]
- H10D30/60—Insulated-gate field-effect transistors [IGFET]
- H10D30/67—Thin-film transistors [TFT]
- H10D30/674—Thin-film transistors [TFT] characterised by the active materials
- H10D30/6755—Oxide semiconductors, e.g. zinc oxide, copper aluminium oxide or cadmium stannate
Landscapes
- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Theoretical Computer Science (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- General Engineering & Computer Science (AREA)
- General Physics & Mathematics (AREA)
- Semiconductor Memories (AREA)
- Dram (AREA)
- Thin Film Transistor (AREA)
- Memory System (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2025129098A JP7854098B2 (ja) | 2020-10-20 | 2025-08-01 | 半導体装置 |
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2020176312 | 2020-10-20 | ||
| JP2020176312 | 2020-10-20 | ||
| PCT/IB2021/059303 WO2022084800A1 (ja) | 2020-10-20 | 2021-10-12 | 半導体装置、及び電子機器 |
Related Child Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2025129098A Division JP7854098B2 (ja) | 2020-10-20 | 2025-08-01 | 半導体装置 |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JPWO2022084800A1 true JPWO2022084800A1 (https=) | 2022-04-28 |
| JPWO2022084800A5 JPWO2022084800A5 (https=) | 2024-10-17 |
| JP7723677B2 JP7723677B2 (ja) | 2025-08-14 |
Family
ID=81289711
Family Applications (2)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2022557216A Active JP7723677B2 (ja) | 2020-10-20 | 2021-10-12 | 半導体装置、及び電子機器 |
| JP2025129098A Active JP7854098B2 (ja) | 2020-10-20 | 2025-08-01 | 半導体装置 |
Family Applications After (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2025129098A Active JP7854098B2 (ja) | 2020-10-20 | 2025-08-01 | 半導体装置 |
Country Status (5)
| Country | Link |
|---|---|
| US (1) | US20230337439A1 (https=) |
| JP (2) | JP7723677B2 (https=) |
| KR (1) | KR20230088692A (https=) |
| CN (1) | CN116601707A (https=) |
| WO (1) | WO2022084800A1 (https=) |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20230268355A1 (en) * | 2022-02-23 | 2023-08-24 | Taiwan Semiconductor Manufacturing Company, Ltd. | Integrated circuit device and method for fabricating the same |
Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0897386A (ja) * | 1994-09-28 | 1996-04-12 | Nec Corp | 半導体不揮発性メモリセル及びその動作方法 |
| JP2003178577A (ja) * | 2001-12-11 | 2003-06-27 | Fujitsu Ltd | 強誘電体メモリ |
| JP2008140220A (ja) * | 2006-12-04 | 2008-06-19 | Nec Corp | 半導体装置 |
| JP2013243351A (ja) * | 2012-04-27 | 2013-12-05 | Semiconductor Energy Lab Co Ltd | スタンダードセル、及び半導体集積回路 |
Family Cites Families (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102742003B (zh) | 2010-01-15 | 2015-01-28 | 株式会社半导体能源研究所 | 半导体器件 |
| EP3304554A4 (en) * | 2015-05-28 | 2019-01-09 | INTEL Corporation | MEMORY CELL BASED ON FERROELECTRIC MATERIAL WITH NON-VOLATILE RETENTION |
| US9773787B2 (en) * | 2015-11-03 | 2017-09-26 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device, memory device, electronic device, or method for driving the semiconductor device |
| WO2018073708A1 (en) * | 2016-10-20 | 2018-04-26 | Semiconductor Energy Laboratory Co., Ltd. | Storage device, driving method thereof, semiconductor device, electronic component, and electronic device |
| US10679688B2 (en) * | 2018-04-16 | 2020-06-09 | Samsung Electronics Co., Ltd. | Ferroelectric-based memory cell usable in on-logic chip memory |
| US11631447B2 (en) * | 2019-07-25 | 2023-04-18 | Taiwan Semiconductor Manufacturing Co., Ltd. | Memory circuit and manufacturing method thereof |
| TWI865775B (zh) * | 2020-05-15 | 2024-12-11 | 日商半導體能源研究所股份有限公司 | 半導體裝置及電子裝置 |
-
2021
- 2021-10-12 US US18/028,812 patent/US20230337439A1/en active Pending
- 2021-10-12 CN CN202180068830.6A patent/CN116601707A/zh active Pending
- 2021-10-12 KR KR1020237011484A patent/KR20230088692A/ko active Pending
- 2021-10-12 WO PCT/IB2021/059303 patent/WO2022084800A1/ja not_active Ceased
- 2021-10-12 JP JP2022557216A patent/JP7723677B2/ja active Active
-
2025
- 2025-08-01 JP JP2025129098A patent/JP7854098B2/ja active Active
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0897386A (ja) * | 1994-09-28 | 1996-04-12 | Nec Corp | 半導体不揮発性メモリセル及びその動作方法 |
| JP2003178577A (ja) * | 2001-12-11 | 2003-06-27 | Fujitsu Ltd | 強誘電体メモリ |
| JP2008140220A (ja) * | 2006-12-04 | 2008-06-19 | Nec Corp | 半導体装置 |
| JP2013243351A (ja) * | 2012-04-27 | 2013-12-05 | Semiconductor Energy Lab Co Ltd | スタンダードセル、及び半導体集積回路 |
Also Published As
| Publication number | Publication date |
|---|---|
| JP7854098B2 (ja) | 2026-04-30 |
| JP7723677B2 (ja) | 2025-08-14 |
| CN116601707A (zh) | 2023-08-15 |
| JP2025156480A (ja) | 2025-10-14 |
| KR20230088692A (ko) | 2023-06-20 |
| US20230337439A1 (en) | 2023-10-19 |
| WO2022084800A1 (ja) | 2022-04-28 |
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