JPWO2022049448A1 - - Google Patents
Info
- Publication number
- JPWO2022049448A1 JPWO2022049448A1 JP2022546727A JP2022546727A JPWO2022049448A1 JP WO2022049448 A1 JPWO2022049448 A1 JP WO2022049448A1 JP 2022546727 A JP2022546727 A JP 2022546727A JP 2022546727 A JP2022546727 A JP 2022546727A JP WO2022049448 A1 JPWO2022049448 A1 JP WO2022049448A1
- Authority
- JP
- Japan
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
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- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C7/00—Arrangements for writing information into, or reading information out from, a digital store
- G11C7/10—Input/output [I/O] data interface arrangements, e.g. I/O data control circuits, I/O data buffers
- G11C7/1078—Data input circuits, e.g. write amplifiers, data input buffers, data input registers, data input level conversion circuits
- G11C7/1096—Write circuits, e.g. I/O line write drivers
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- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
- G11C11/22—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using ferroelectric elements
- G11C11/221—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using ferroelectric elements using ferroelectric capacitors
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
- G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
- G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
- G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
- G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
- G11C11/401—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
- G11C11/4063—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing
- G11C11/407—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing for memory cells of the field-effect type
- G11C11/409—Read-write [R-W] circuits
- G11C11/4096—Input/output [I/O] data management or control circuits, e.g. reading or writing circuits, I/O drivers or bit-line switches
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- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C14/00—Digital stores characterised by arrangements of cells having volatile and non-volatile storage properties for back-up when the power is down
- G11C14/0009—Digital stores characterised by arrangements of cells having volatile and non-volatile storage properties for back-up when the power is down in which the volatile element is a DRAM cell
- G11C14/0027—Digital stores characterised by arrangements of cells having volatile and non-volatile storage properties for back-up when the power is down in which the volatile element is a DRAM cell and the nonvolatile element is a ferroelectric element
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N97/00—Electric solid-state thin-film or thick-film devices, not otherwise provided for
Landscapes
- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Databases & Information Systems (AREA)
- Thin Film Transistor (AREA)
- Semiconductor Memories (AREA)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2020149505 | 2020-09-06 | ||
PCT/IB2021/057699 WO2022049448A1 (ja) | 2020-09-06 | 2021-08-23 | 半導体装置、及び電子機器 |
Publications (2)
Publication Number | Publication Date |
---|---|
JPWO2022049448A1 true JPWO2022049448A1 (ja) | 2022-03-10 |
JPWO2022049448A5 JPWO2022049448A5 (ja) | 2024-08-20 |
Family
ID=80490684
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2022546727A Pending JPWO2022049448A1 (ja) | 2020-09-06 | 2021-08-23 |
Country Status (5)
Country | Link |
---|---|
US (1) | US20230317125A1 (ja) |
JP (1) | JPWO2022049448A1 (ja) |
KR (1) | KR20230058645A (ja) |
CN (1) | CN116018644A (ja) |
WO (1) | WO2022049448A1 (ja) |
Families Citing this family (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR102544503B1 (ko) * | 2021-08-06 | 2023-06-16 | 고려대학교 산학협력단 | 아날로그 캐패시터 메모리 회로의 오차 보상 회로 |
Family Cites Families (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2003092533A (ja) * | 2001-09-18 | 2003-03-28 | Matsushita Electric Ind Co Ltd | 半導体回路及びその駆動方法 |
JP2012256821A (ja) | 2010-09-13 | 2012-12-27 | Semiconductor Energy Lab Co Ltd | 記憶装置 |
KR102613318B1 (ko) * | 2015-12-28 | 2023-12-14 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 반도체 장치 |
-
2021
- 2021-08-23 JP JP2022546727A patent/JPWO2022049448A1/ja active Pending
- 2021-08-23 WO PCT/IB2021/057699 patent/WO2022049448A1/ja active Application Filing
- 2021-08-23 CN CN202180054265.8A patent/CN116018644A/zh active Pending
- 2021-08-23 KR KR1020237008306A patent/KR20230058645A/ko active Search and Examination
- 2021-08-23 US US18/043,103 patent/US20230317125A1/en active Pending
Also Published As
Publication number | Publication date |
---|---|
CN116018644A (zh) | 2023-04-25 |
KR20230058645A (ko) | 2023-05-03 |
WO2022049448A1 (ja) | 2022-03-10 |
US20230317125A1 (en) | 2023-10-05 |
Similar Documents
Legal Events
Date | Code | Title | Description |
---|---|---|---|
A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20240809 |
|
A621 | Written request for application examination |
Free format text: JAPANESE INTERMEDIATE CODE: A621 Effective date: 20240809 |