JPWO2021246458A1 - - Google Patents

Info

Publication number
JPWO2021246458A1
JPWO2021246458A1 JP2022528878A JP2022528878A JPWO2021246458A1 JP WO2021246458 A1 JPWO2021246458 A1 JP WO2021246458A1 JP 2022528878 A JP2022528878 A JP 2022528878A JP 2022528878 A JP2022528878 A JP 2022528878A JP WO2021246458 A1 JPWO2021246458 A1 JP WO2021246458A1
Authority
JP
Japan
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP2022528878A
Other versions
JP7470790B2 (ja
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Publication of JPWO2021246458A1 publication Critical patent/JPWO2021246458A1/ja
Application granted granted Critical
Publication of JP7470790B2 publication Critical patent/JP7470790B2/ja
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Classifications

    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004Photosensitive materials
    • CCHEMISTRY; METALLURGY
    • C08ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08GMACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
    • C08G73/00Macromolecular compounds obtained by reactions forming a linkage containing nitrogen with or without oxygen or carbon in the main chain of the macromolecule, not provided for in groups C08G12/00 - C08G71/00
    • C08G73/06Polycondensates having nitrogen-containing heterocyclic rings in the main chain of the macromolecule
    • C08G73/10Polyimides; Polyester-imides; Polyamide-imides; Polyamide acids or similar polyimide precursors
    • CCHEMISTRY; METALLURGY
    • C08ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08GMACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
    • C08G73/00Macromolecular compounds obtained by reactions forming a linkage containing nitrogen with or without oxygen or carbon in the main chain of the macromolecule, not provided for in groups C08G12/00 - C08G71/00
    • C08G73/06Polycondensates having nitrogen-containing heterocyclic rings in the main chain of the macromolecule
    • C08G73/22Polybenzoxazoles
    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004Photosensitive materials
    • G03F7/0045Photosensitive materials with organic non-macromolecular light-sensitive compounds not otherwise provided for, e.g. dissolution inhibitors
    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004Photosensitive materials
    • G03F7/027Non-macromolecular photopolymerisable compounds having carbon-to-carbon double bonds, e.g. ethylenic compounds
    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004Photosensitive materials
    • G03F7/027Non-macromolecular photopolymerisable compounds having carbon-to-carbon double bonds, e.g. ethylenic compounds
    • G03F7/032Non-macromolecular photopolymerisable compounds having carbon-to-carbon double bonds, e.g. ethylenic compounds with binders
    • G03F7/037Non-macromolecular photopolymerisable compounds having carbon-to-carbon double bonds, e.g. ethylenic compounds with binders the binders being polyamides or polyimides
    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004Photosensitive materials
    • G03F7/038Macromolecular compounds which are rendered insoluble or differentially wettable
    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004Photosensitive materials
    • G03F7/075Silicon-containing compounds
    • G03F7/0755Non-macromolecular compounds containing Si-O, Si-C or Si-N bonds
    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004Photosensitive materials
    • G03F7/09Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers
    • G03F7/11Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers having cover layers or intermediate layers, e.g. subbing layers
    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/20Exposure; Apparatus therefor
JP2022528878A 2020-06-03 2021-06-02 感光性樹脂組成物、硬化膜、積層体、硬化膜の製造方法、及び、半導体デバイス Active JP7470790B2 (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2020097009 2020-06-03
JP2020097009 2020-06-03
PCT/JP2021/021068 WO2021246458A1 (ja) 2020-06-03 2021-06-02 感光性樹脂組成物、硬化膜、積層体、硬化膜の製造方法、及び、半導体デバイス

Publications (2)

Publication Number Publication Date
JPWO2021246458A1 true JPWO2021246458A1 (ja) 2021-12-09
JP7470790B2 JP7470790B2 (ja) 2024-04-18

Family

ID=78831190

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2022528878A Active JP7470790B2 (ja) 2020-06-03 2021-06-02 感光性樹脂組成物、硬化膜、積層体、硬化膜の製造方法、及び、半導体デバイス

Country Status (4)

Country Link
JP (1) JP7470790B2 (ja)
KR (1) KR20230004846A (ja)
TW (1) TW202204476A (ja)
WO (1) WO2021246458A1 (ja)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN114316288B (zh) * 2021-12-27 2023-03-03 重庆师范大学 一种绿色荧光高连接Cd4-有机配位聚合物及其制法与应用
WO2024048605A1 (ja) * 2022-08-31 2024-03-07 富士フイルム株式会社 樹脂組成物、硬化物、積層体、硬化物の製造方法、積層体の製造方法、半導体デバイスの製造方法、及び、半導体デバイス

Citations (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2001219667A (ja) * 1999-11-22 2001-08-14 Eastman Kodak Co 熱的に転換可能な組成物並びにオキソノールir色素を含有している像形成部材並びに像形成および印刷の方法
JP2003530595A (ja) * 2000-04-07 2003-10-14 イーストマン コダック カンパニー 改善された剥離強度を有する自立性画像形成アセンブリー
JP2007256345A (ja) * 2006-03-20 2007-10-04 Fujitsu Ltd 樹脂パターンの形成方法
WO2009025388A1 (ja) * 2007-08-21 2009-02-26 Jsr Corporation 液晶配向剤、液晶配向膜の製造方法および液晶表示素子
JP2011221549A (ja) * 2011-06-09 2011-11-04 Honeywell Internatl Inc フォトリソグラフィー用スピンオン反射防止膜
JP2013545142A (ja) * 2010-11-15 2013-12-19 インターナショナル・ビジネス・マシーンズ・コーポレーション ネガ型現像用のフォトレジスト組成物、およびそれを使用したパターン形成方法
JP2016191905A (ja) * 2015-03-30 2016-11-10 東京応化工業株式会社 感光性樹脂組成物、パターン形成方法、硬化膜、絶縁膜、カラーフィルタ、及び表示装置
WO2017073674A1 (ja) * 2015-10-30 2017-05-04 東レ株式会社 基板の製造方法およびそれを用いた発光素子の製造方法
JP2017181928A (ja) * 2016-03-31 2017-10-05 Jsr株式会社 ポジ型感放射線性樹脂組成物、層間絶縁膜、層間絶縁膜の形成方法、半導体素子及び表示素子
WO2017188047A1 (ja) * 2016-04-25 2017-11-02 東レ株式会社 樹脂組成物、その硬化膜およびその製造方法ならびに固体撮像素子
JP6418248B2 (ja) * 2015-09-30 2018-11-07 東レ株式会社 ネガ型感光性樹脂組成物、硬化膜、硬化膜を具備する素子及び表示装置、並びにその製造方法

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN103052680B (zh) 2010-08-05 2016-05-25 日产化学工业株式会社 树脂组合物、液晶取向材及相位差材
JP7287119B2 (ja) 2018-06-01 2023-06-06 Jnc株式会社 光配向用液晶配向剤、液晶配向膜およびこれを用いた液晶表示素子

Patent Citations (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2001219667A (ja) * 1999-11-22 2001-08-14 Eastman Kodak Co 熱的に転換可能な組成物並びにオキソノールir色素を含有している像形成部材並びに像形成および印刷の方法
JP2003530595A (ja) * 2000-04-07 2003-10-14 イーストマン コダック カンパニー 改善された剥離強度を有する自立性画像形成アセンブリー
JP2007256345A (ja) * 2006-03-20 2007-10-04 Fujitsu Ltd 樹脂パターンの形成方法
WO2009025388A1 (ja) * 2007-08-21 2009-02-26 Jsr Corporation 液晶配向剤、液晶配向膜の製造方法および液晶表示素子
JP2013545142A (ja) * 2010-11-15 2013-12-19 インターナショナル・ビジネス・マシーンズ・コーポレーション ネガ型現像用のフォトレジスト組成物、およびそれを使用したパターン形成方法
JP2011221549A (ja) * 2011-06-09 2011-11-04 Honeywell Internatl Inc フォトリソグラフィー用スピンオン反射防止膜
JP2016191905A (ja) * 2015-03-30 2016-11-10 東京応化工業株式会社 感光性樹脂組成物、パターン形成方法、硬化膜、絶縁膜、カラーフィルタ、及び表示装置
JP6418248B2 (ja) * 2015-09-30 2018-11-07 東レ株式会社 ネガ型感光性樹脂組成物、硬化膜、硬化膜を具備する素子及び表示装置、並びにその製造方法
WO2017073674A1 (ja) * 2015-10-30 2017-05-04 東レ株式会社 基板の製造方法およびそれを用いた発光素子の製造方法
JP2017181928A (ja) * 2016-03-31 2017-10-05 Jsr株式会社 ポジ型感放射線性樹脂組成物、層間絶縁膜、層間絶縁膜の形成方法、半導体素子及び表示素子
WO2017188047A1 (ja) * 2016-04-25 2017-11-02 東レ株式会社 樹脂組成物、その硬化膜およびその製造方法ならびに固体撮像素子

Also Published As

Publication number Publication date
WO2021246458A1 (ja) 2021-12-09
TW202204476A (zh) 2022-02-01
KR20230004846A (ko) 2023-01-06
JP7470790B2 (ja) 2024-04-18

Similar Documents

Publication Publication Date Title
BR112021014123A2 (ja)
JPWO2021246458A1 (ja)
BR102021018859A2 (ja)
JPWO2022050278A1 (ja)
BR112022009896A2 (ja)
BR102021007058A2 (ja)
BR102020022030A2 (ja)
JPWO2022259933A1 (ja)
BR102021020147A2 (ja)
BR102021018926A2 (ja)
BR102021018167A2 (ja)
BR102021016837A2 (ja)
BR102021016551A2 (ja)
BR102021016375A2 (ja)
BR102021016200A2 (ja)
BR102021016176A2 (ja)
BR102021015566A2 (ja)
BR102021015450A8 (ja)
BR102021015500A2 (ja)
BR102021015247A2 (ja)
BR102021015220A2 (ja)
BR102021014056A2 (ja)
BR102021014044A2 (ja)
BR102021013929A2 (ja)
BR112021017747A2 (ja)

Legal Events

Date Code Title Description
A621 Written request for application examination

Free format text: JAPANESE INTERMEDIATE CODE: A621

Effective date: 20221114

A131 Notification of reasons for refusal

Free format text: JAPANESE INTERMEDIATE CODE: A131

Effective date: 20230905

A601 Written request for extension of time

Free format text: JAPANESE INTERMEDIATE CODE: A601

Effective date: 20231025

A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20231228

A131 Notification of reasons for refusal

Free format text: JAPANESE INTERMEDIATE CODE: A131

Effective date: 20240116

A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20240315

A01 Written decision to grant a patent or to grant a registration (utility model)

Free format text: JAPANESE INTERMEDIATE CODE: A01

Effective date: 20240402

A61 First payment of annual fees (during grant procedure)

Free format text: JAPANESE INTERMEDIATE CODE: A61

Effective date: 20240408