JPWO2021220691A1 - - Google Patents
Info
- Publication number
- JPWO2021220691A1 JPWO2021220691A1 JP2022517562A JP2022517562A JPWO2021220691A1 JP WO2021220691 A1 JPWO2021220691 A1 JP WO2021220691A1 JP 2022517562 A JP2022517562 A JP 2022517562A JP 2022517562 A JP2022517562 A JP 2022517562A JP WO2021220691 A1 JPWO2021220691 A1 JP WO2021220691A1
- Authority
- JP
- Japan
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
- H10F39/10—Integrated devices
- H10F39/12—Image sensors
- H10F39/18—Complementary metal-oxide-semiconductor [CMOS] image sensors; Photodiode array image sensors
- H10F39/182—Colour image sensors
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
- H10F39/80—Constructional details of image sensors
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
- H10F39/80—Constructional details of image sensors
- H10F39/803—Pixels having integrated switching, control, storage or amplification elements
- H10F39/8037—Pixels having integrated switching, control, storage or amplification elements the integrated elements comprising a transistor
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
- H10F39/80—Constructional details of image sensors
- H10F39/805—Coatings
- H10F39/8053—Colour filters
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K30/00—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation
- H10K30/30—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation comprising bulk heterojunctions, e.g. interpenetrating networks of donor and acceptor material domains
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K30/00—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation
- H10K30/30—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation comprising bulk heterojunctions, e.g. interpenetrating networks of donor and acceptor material domains
- H10K30/353—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation comprising bulk heterojunctions, e.g. interpenetrating networks of donor and acceptor material domains comprising blocking layers, e.g. exciton blocking layers
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K39/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic radiation-sensitive element covered by group H10K30/00
- H10K39/30—Devices controlled by radiation
- H10K39/32—Organic image sensors
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K2101/00—Properties of the organic materials covered by group H10K85/00
- H10K2101/30—Highest occupied molecular orbital [HOMO], lowest unoccupied molecular orbital [LUMO] or Fermi energy values
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K30/00—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation
- H10K30/80—Constructional details
- H10K30/84—Layers having high charge carrier mobility
- H10K30/85—Layers having high electron mobility, e.g. electron-transporting layers or hole-blocking layers
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K30/00—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation
- H10K30/80—Constructional details
- H10K30/84—Layers having high charge carrier mobility
- H10K30/86—Layers having high hole mobility, e.g. hole-transporting layers or electron-blocking layers
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/549—Organic PV cells
Landscapes
- Physics & Mathematics (AREA)
- Electromagnetism (AREA)
- Solid State Image Pick-Up Elements (AREA)
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2020078444 | 2020-04-27 | ||
| PCT/JP2021/013173 WO2021220691A1 (ja) | 2020-04-27 | 2021-03-29 | 光電変換素子および撮像装置 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPWO2021220691A1 true JPWO2021220691A1 (https=) | 2021-11-04 |
| JPWO2021220691A5 JPWO2021220691A5 (https=) | 2023-01-23 |
Family
ID=78373477
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2022517562A Pending JPWO2021220691A1 (https=) | 2020-04-27 | 2021-03-29 |
Country Status (5)
| Country | Link |
|---|---|
| US (1) | US20230045956A1 (https=) |
| EP (1) | EP4145549A4 (https=) |
| JP (1) | JPWO2021220691A1 (https=) |
| CN (1) | CN115428182A (https=) |
| WO (1) | WO2021220691A1 (https=) |
Families Citing this family (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2026032297A (ja) * | 2023-01-11 | 2026-02-26 | パナソニックＩｐマネジメント株式会社 | 光電変換素子および撮像装置 |
| JPWO2024190237A1 (https=) * | 2023-03-14 | 2024-09-19 |
Citations (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2010134432A1 (ja) * | 2009-05-22 | 2010-11-25 | コニカミノルタホールディングス株式会社 | 有機光電変換素子 |
| JP2011222949A (ja) * | 2010-03-24 | 2011-11-04 | Fujifilm Corp | 光電変換素子及び撮像素子 |
| JP2014506736A (ja) * | 2011-02-21 | 2014-03-17 | ザ リージェンツ オブ ザ ユニヴァシティ オブ ミシガン | 電子伝導性励起子遮蔽層を有する有機光起電力電池 |
| JP2015026703A (ja) * | 2013-07-26 | 2015-02-05 | 旭硝子株式会社 | 光電変換素子及び撮像素子 |
| US20150060775A1 (en) * | 2013-08-28 | 2015-03-05 | Taiwan Semiconductor Manufacturing Company, Ltd. | Organic photo diode with dual electron blocking layers |
| WO2019239851A1 (ja) * | 2018-06-14 | 2019-12-19 | パナソニックＩｐマネジメント株式会社 | 制御電極と、透明電極と、前記制御電極と前記透明電極の側面とを電気的に接続する接続層と、を備えるイメージセンサ |
| JP2020057686A (ja) * | 2018-10-01 | 2020-04-09 | 住友化学株式会社 | 光電変換素子及びその製造方法 |
Family Cites Families (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP4677314B2 (ja) | 2005-09-20 | 2011-04-27 | 富士フイルム株式会社 | センサーおよび有機光電変換素子の駆動方法 |
| JP5969843B2 (ja) * | 2012-07-17 | 2016-08-17 | 日本放送協会 | 有機光電変換素子、及び、これを含む受光素子 |
| US11043604B2 (en) * | 2015-07-28 | 2021-06-22 | University Of Rochester | Low dark current, resonant cavity-enhanced infrared photodetectors |
-
2021
- 2021-03-29 JP JP2022517562A patent/JPWO2021220691A1/ja active Pending
- 2021-03-29 EP EP21797391.6A patent/EP4145549A4/en not_active Withdrawn
- 2021-03-29 CN CN202180027763.3A patent/CN115428182A/zh active Pending
- 2021-03-29 WO PCT/JP2021/013173 patent/WO2021220691A1/ja not_active Ceased
-
2022
- 2022-09-27 US US17/935,607 patent/US20230045956A1/en not_active Abandoned
Patent Citations (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2010134432A1 (ja) * | 2009-05-22 | 2010-11-25 | コニカミノルタホールディングス株式会社 | 有機光電変換素子 |
| JP2011222949A (ja) * | 2010-03-24 | 2011-11-04 | Fujifilm Corp | 光電変換素子及び撮像素子 |
| JP2014506736A (ja) * | 2011-02-21 | 2014-03-17 | ザ リージェンツ オブ ザ ユニヴァシティ オブ ミシガン | 電子伝導性励起子遮蔽層を有する有機光起電力電池 |
| JP2015026703A (ja) * | 2013-07-26 | 2015-02-05 | 旭硝子株式会社 | 光電変換素子及び撮像素子 |
| US20150060775A1 (en) * | 2013-08-28 | 2015-03-05 | Taiwan Semiconductor Manufacturing Company, Ltd. | Organic photo diode with dual electron blocking layers |
| WO2019239851A1 (ja) * | 2018-06-14 | 2019-12-19 | パナソニックＩｐマネジメント株式会社 | 制御電極と、透明電極と、前記制御電極と前記透明電極の側面とを電気的に接続する接続層と、を備えるイメージセンサ |
| JP2020057686A (ja) * | 2018-10-01 | 2020-04-09 | 住友化学株式会社 | 光電変換素子及びその製造方法 |
Non-Patent Citations (1)
| Title |
|---|
| YOU, HAILONG ET AL.: "Low Temperature Aqueous Solution-Processed ZnO and Polyethylenimine Ethoxylated Cathode Buffer Bilay", ENERGIES, vol. 10, no. 494, JPN6021023650, 6 April 2017 (2017-04-06), pages 1 - 12, ISSN: 0005682753 * |
Also Published As
| Publication number | Publication date |
|---|---|
| CN115428182A (zh) | 2022-12-02 |
| EP4145549A1 (en) | 2023-03-08 |
| WO2021220691A1 (ja) | 2021-11-04 |
| EP4145549A4 (en) | 2023-10-18 |
| US20230045956A1 (en) | 2023-02-16 |
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