CN115428182A - 光电变换元件及摄像装置 - Google Patents

光电变换元件及摄像装置 Download PDF

Info

Publication number
CN115428182A
CN115428182A CN202180027763.3A CN202180027763A CN115428182A CN 115428182 A CN115428182 A CN 115428182A CN 202180027763 A CN202180027763 A CN 202180027763A CN 115428182 A CN115428182 A CN 115428182A
Authority
CN
China
Prior art keywords
photoelectric conversion
electrode
conversion element
blocking layer
charge blocking
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
CN202180027763.3A
Other languages
English (en)
Chinese (zh)
Inventor
井土真澄
饭岛浩章
平出雅哉
岸本有子
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Panasonic Intellectual Property Management Co Ltd
Original Assignee
Panasonic Intellectual Property Management Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Panasonic Intellectual Property Management Co Ltd filed Critical Panasonic Intellectual Property Management Co Ltd
Publication of CN115428182A publication Critical patent/CN115428182A/zh
Pending legal-status Critical Current

Links

Images

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/10—Integrated devices
    • H10F39/12—Image sensors
    • H10F39/18—Complementary metal-oxide-semiconductor [CMOS] image sensors; Photodiode array image sensors
    • H10F39/182—Colour image sensors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/803—Pixels having integrated switching, control, storage or amplification elements
    • H10F39/8037—Pixels having integrated switching, control, storage or amplification elements the integrated elements comprising a transistor
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/805—Coatings
    • H10F39/8053—Colour filters
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K30/00—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation
    • H10K30/30—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation comprising bulk heterojunctions, e.g. interpenetrating networks of donor and acceptor material domains
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K30/00—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation
    • H10K30/30—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation comprising bulk heterojunctions, e.g. interpenetrating networks of donor and acceptor material domains
    • H10K30/353—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation comprising bulk heterojunctions, e.g. interpenetrating networks of donor and acceptor material domains comprising blocking layers, e.g. exciton blocking layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K39/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic radiation-sensitive element covered by group H10K30/00
    • H10K39/30—Devices controlled by radiation
    • H10K39/32—Organic image sensors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K2101/00—Properties of the organic materials covered by group H10K85/00
    • H10K2101/30—Highest occupied molecular orbital [HOMO], lowest unoccupied molecular orbital [LUMO] or Fermi energy values
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K30/00—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation
    • H10K30/80—Constructional details
    • H10K30/84—Layers having high charge carrier mobility
    • H10K30/85—Layers having high electron mobility, e.g. electron-transporting layers or hole-blocking layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K30/00—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation
    • H10K30/80—Constructional details
    • H10K30/84—Layers having high charge carrier mobility
    • H10K30/86—Layers having high hole mobility, e.g. hole-transporting layers or electron-blocking layers
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/549—Organic PV cells

Landscapes

  • Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Solid State Image Pick-Up Elements (AREA)
CN202180027763.3A 2020-04-27 2021-03-29 光电变换元件及摄像装置 Pending CN115428182A (zh)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2020-078444 2020-04-27
JP2020078444 2020-04-27
PCT/JP2021/013173 WO2021220691A1 (ja) 2020-04-27 2021-03-29 光電変換素子および撮像装置

Publications (1)

Publication Number Publication Date
CN115428182A true CN115428182A (zh) 2022-12-02

Family

ID=78373477

Family Applications (1)

Application Number Title Priority Date Filing Date
CN202180027763.3A Pending CN115428182A (zh) 2020-04-27 2021-03-29 光电变换元件及摄像装置

Country Status (5)

Country Link
US (1) US20230045956A1 (https=)
EP (1) EP4145549A4 (https=)
JP (1) JPWO2021220691A1 (https=)
CN (1) CN115428182A (https=)
WO (1) WO2021220691A1 (https=)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2026032297A (ja) * 2023-01-11 2026-02-26 パナソニックＩｐマネジメント株式会社 光電変換素子および撮像装置
JPWO2024190237A1 (https=) * 2023-03-14 2024-09-19

Family Cites Families (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4677314B2 (ja) 2005-09-20 2011-04-27 富士フイルム株式会社 センサーおよび有機光電変換素子の駆動方法
JP5488595B2 (ja) * 2009-05-22 2014-05-14 コニカミノルタ株式会社 有機光電変換素子
JP5270642B2 (ja) * 2010-03-24 2013-08-21 富士フイルム株式会社 光電変換素子及び撮像素子
EP3751629B1 (en) * 2011-02-21 2024-05-01 The Regents of the University of Michigan Organic photovoltaic cell incorporating electron conducting exciton blocking layers
JP5969843B2 (ja) * 2012-07-17 2016-08-17 日本放送協会 有機光電変換素子、及び、これを含む受光素子
JP2015026703A (ja) * 2013-07-26 2015-02-05 旭硝子株式会社 光電変換素子及び撮像素子
US9484537B2 (en) * 2013-08-28 2016-11-01 Taiwan Semiconductor Manufacturing Company, Ltd. Organic photo diode with dual electron blocking layers
US11043604B2 (en) * 2015-07-28 2021-06-22 University Of Rochester Low dark current, resonant cavity-enhanced infrared photodetectors
CN111971800B (zh) * 2018-06-14 2025-01-10 松下知识产权经营株式会社 具备控制电极、透明电极和连接层的图像传感器
JP7235465B2 (ja) * 2018-10-01 2023-03-08 住友化学株式会社 光電変換素子及びその製造方法

Also Published As

Publication number Publication date
EP4145549A1 (en) 2023-03-08
WO2021220691A1 (ja) 2021-11-04
EP4145549A4 (en) 2023-10-18
JPWO2021220691A1 (https=) 2021-11-04
US20230045956A1 (en) 2023-02-16

Similar Documents

Publication Publication Date Title
JP7535701B2 (ja) 撮像装置
US12433087B2 (en) Imaging device
US20230045956A1 (en) Photoelectric conversion element and imaging apparatus
US12289552B2 (en) Imaging device and driving method
US20210273019A1 (en) Imaging device, method for manufacturing imaging device, and imaging apparatus
US20250031512A1 (en) Photoelectric conversion element and imaging device
US20240365657A1 (en) Photoelectric conversion element, imaging device, and fullerene derivative solution
US11723224B2 (en) Imaging apparatus
CN117083995A (zh) 光电转换元件和摄像装置
US20250393385A1 (en) Photoelectric conversion element and imaging device
US20240276744A1 (en) Imaging apparatus
US12082427B2 (en) Imaging device, method for manufacturing imaging device, and imaging apparatus
US20260032355A1 (en) Imaging device
US20260025600A1 (en) Imaging device
WO2024214448A1 (ja) 光電変換素子および撮像装置
WO2025173448A1 (ja) 光電変換素子、撮像装置および光電変換素子の製造方法
WO2025187350A1 (ja) 光電変換素子、撮像装置およびカメラシステム

Legal Events

Date Code Title Description
PB01 Publication
PB01 Publication
SE01 Entry into force of request for substantive examination
SE01 Entry into force of request for substantive examination