JPWO2021200508A1 - - Google Patents
Info
- Publication number
- JPWO2021200508A1 JPWO2021200508A1 JP2022512043A JP2022512043A JPWO2021200508A1 JP WO2021200508 A1 JPWO2021200508 A1 JP WO2021200508A1 JP 2022512043 A JP2022512043 A JP 2022512043A JP 2022512043 A JP2022512043 A JP 2022512043A JP WO2021200508 A1 JPWO2021200508 A1 JP WO2021200508A1
- Authority
- JP
- Japan
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Abandoned
Links
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
- H10F39/10—Integrated devices
- H10F39/12—Image sensors
- H10F39/191—Photoconductor image sensors
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K39/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic radiation-sensitive element covered by group H10K30/00
- H10K39/30—Devices controlled by radiation
- H10K39/32—Organic image sensors
-
- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
- H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
- H04N25/60—Noise processing, e.g. detecting, correcting, reducing or removing noise
- H04N25/62—Detection or reduction of noise due to excess charges produced by the exposure, e.g. smear, blooming, ghost image, crosstalk or leakage between pixels
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
- H10F39/10—Integrated devices
- H10F39/12—Image sensors
- H10F39/18—Complementary metal-oxide-semiconductor [CMOS] image sensors; Photodiode array image sensors
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
- H10F39/80—Constructional details of image sensors
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
- H10F39/80—Constructional details of image sensors
- H10F39/802—Geometry or disposition of elements in pixels, e.g. address-lines or gate electrodes
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
- H10F39/80—Constructional details of image sensors
- H10F39/803—Pixels having integrated switching, control, storage or amplification elements
- H10F39/8033—Photosensitive area
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
- H10F39/80—Constructional details of image sensors
- H10F39/803—Pixels having integrated switching, control, storage or amplification elements
- H10F39/8037—Pixels having integrated switching, control, storage or amplification elements the integrated elements comprising a transistor
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
- H10F39/80—Constructional details of image sensors
- H10F39/805—Coatings
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
- H10F39/80—Constructional details of image sensors
- H10F39/811—Interconnections
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K19/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic element specially adapted for rectifying, amplifying, oscillating or switching, covered by group H10K10/00
- H10K19/20—Integrated devices, or assemblies of multiple devices, comprising at least one organic element specially adapted for rectifying, amplifying, oscillating or switching, covered by group H10K10/00 comprising components having an active region that includes an inorganic semiconductor
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
- H10F39/10—Integrated devices
- H10F39/12—Image sensors
- H10F39/18—Complementary metal-oxide-semiconductor [CMOS] image sensors; Photodiode array image sensors
- H10F39/182—Colour image sensors
- H10F39/1825—Multicolour image sensors having stacked structure, e.g. NPN, NPNPN or multiple quantum well [MQW] structures
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/549—Organic PV cells
Landscapes
- Engineering & Computer Science (AREA)
- Multimedia (AREA)
- Signal Processing (AREA)
- Chemical & Material Sciences (AREA)
- Inorganic Chemistry (AREA)
- Solid State Image Pick-Up Elements (AREA)
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2020064018 | 2020-03-31 | ||
| JP2021045946 | 2021-03-19 | ||
| PCT/JP2021/012399 WO2021200508A1 (ja) | 2020-03-31 | 2021-03-24 | 撮像素子および撮像装置 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPWO2021200508A1 true JPWO2021200508A1 (https=) | 2021-10-07 |
Family
ID=77928370
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2022512043A Abandoned JPWO2021200508A1 (https=) | 2020-03-31 | 2021-03-24 |
Country Status (7)
| Country | Link |
|---|---|
| US (1) | US20230124165A1 (https=) |
| EP (1) | EP4131380A4 (https=) |
| JP (1) | JPWO2021200508A1 (https=) |
| KR (1) | KR102776688B1 (https=) |
| CN (1) | CN115053347A (https=) |
| TW (1) | TWI876005B (https=) |
| WO (1) | WO2021200508A1 (https=) |
Families Citing this family (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR102653048B1 (ko) * | 2018-04-20 | 2024-04-01 | 소니그룹주식회사 | 촬상 소자, 적층형 촬상 소자 및 고체 촬상 장치 |
| CN118830086A (zh) * | 2022-03-25 | 2024-10-22 | 索尼半导体解决方案公司 | 摄像元件和摄像元件的制造方法以及光检测装置 |
| WO2025018087A1 (ja) * | 2023-07-14 | 2025-01-23 | ソニーセミコンダクタソリューションズ株式会社 | 光検出装置 |
| WO2025100109A1 (ja) * | 2023-11-09 | 2025-05-15 | ソニーセミコンダクタソリューションズ株式会社 | 光検出素子および光検出装置 |
Family Cites Families (17)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR101861650B1 (ko) * | 2011-10-17 | 2018-05-29 | 삼성전자주식회사 | 이미지 센서, 이를 포함하는 전자 시스템 및 그 이미지 센싱 방법 |
| CN106537898B (zh) * | 2014-07-25 | 2020-07-28 | 株式会社半导体能源研究所 | 成像装置 |
| KR102355558B1 (ko) | 2014-07-31 | 2022-01-27 | 삼성전자주식회사 | 이미지 센서 |
| JP2016063165A (ja) * | 2014-09-19 | 2016-04-25 | 株式会社東芝 | 撮像素子及び固体撮像装置 |
| US10373991B2 (en) * | 2015-08-19 | 2019-08-06 | Semiconductor Energy Laboratory Co., Ltd. | Imaging device, operating method thereof, and electronic device |
| JP6780421B2 (ja) | 2016-03-01 | 2020-11-04 | ソニー株式会社 | 撮像素子、積層型撮像素子及び固体撮像装置、並びに、固体撮像装置の駆動方法 |
| JP2018046039A (ja) * | 2016-09-12 | 2018-03-22 | ソニーセミコンダクタソリューションズ株式会社 | 固体撮像素子および固体撮像装置 |
| TWI770159B (zh) * | 2017-04-21 | 2022-07-11 | 日商索尼股份有限公司 | 攝像元件、積層型攝像元件及固體攝像裝置 |
| CN111033740A (zh) | 2017-08-16 | 2020-04-17 | 索尼公司 | 摄像元件、层叠型摄像元件和固态摄像装置 |
| JP2019036641A (ja) * | 2017-08-16 | 2019-03-07 | ソニー株式会社 | 撮像素子、積層型撮像素子及び固体撮像装置 |
| EP3723132B1 (en) * | 2017-12-05 | 2022-08-24 | Sony Group Corporation | Imaging element, laminate-type imaging element, and solid-state imaging device |
| KR102653048B1 (ko) * | 2018-04-20 | 2024-04-01 | 소니그룹주식회사 | 촬상 소자, 적층형 촬상 소자 및 고체 촬상 장치 |
| TWI800636B (zh) * | 2018-04-20 | 2023-05-01 | 日商索尼股份有限公司 | 攝像元件、積層型攝像元件及固體攝像裝置 |
| TWI820114B (zh) * | 2018-04-20 | 2023-11-01 | 日商索尼股份有限公司 | 攝像元件、積層型攝像元件及固體攝像裝置 |
| CN112385044B (zh) * | 2018-07-17 | 2024-09-17 | 索尼半导体解决方案公司 | 摄像元件、层叠型摄像元件和固态摄像装置 |
| JP7170170B2 (ja) | 2018-10-19 | 2022-11-14 | パナソニックＩｐマネジメント株式会社 | エンコーダおよびそれを備えたブラシレスモータ |
| JP7392971B2 (ja) | 2019-09-20 | 2023-12-06 | 岐阜プラスチック工業株式会社 | 中空構造体及びその製造方法 |
-
2021
- 2021-03-24 JP JP2022512043A patent/JPWO2021200508A1/ja not_active Abandoned
- 2021-03-24 KR KR1020227031283A patent/KR102776688B1/ko active Active
- 2021-03-24 CN CN202180012673.7A patent/CN115053347A/zh not_active Withdrawn
- 2021-03-24 US US17/915,640 patent/US20230124165A1/en active Pending
- 2021-03-24 EP EP21778940.3A patent/EP4131380A4/en not_active Withdrawn
- 2021-03-24 WO PCT/JP2021/012399 patent/WO2021200508A1/ja not_active Ceased
- 2021-03-25 TW TW110110948A patent/TWI876005B/zh active
Also Published As
| Publication number | Publication date |
|---|---|
| EP4131380A1 (en) | 2023-02-08 |
| KR20220160559A (ko) | 2022-12-06 |
| US20230124165A1 (en) | 2023-04-20 |
| TW202145548A (zh) | 2021-12-01 |
| KR102776688B1 (ko) | 2025-03-11 |
| TWI876005B (zh) | 2025-03-11 |
| WO2021200508A1 (ja) | 2021-10-07 |
| EP4131380A4 (en) | 2023-10-04 |
| CN115053347A (zh) | 2022-09-13 |
Similar Documents
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| A621 | Written request for application examination |
Free format text: JAPANESE INTERMEDIATE CODE: A621 Effective date: 20240308 |
|
| A762 | Written abandonment of application |
Free format text: JAPANESE INTERMEDIATE CODE: A762 Effective date: 20250210 |