CN115053347A - 摄像元件和摄像装置 - Google Patents

摄像元件和摄像装置 Download PDF

Info

Publication number
CN115053347A
CN115053347A CN202180012673.7A CN202180012673A CN115053347A CN 115053347 A CN115053347 A CN 115053347A CN 202180012673 A CN202180012673 A CN 202180012673A CN 115053347 A CN115053347 A CN 115053347A
Authority
CN
China
Prior art keywords
layer
electrode
photoelectric conversion
image pickup
semiconductor layer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
CN202180012673.7A
Other languages
English (en)
Chinese (zh)
Inventor
中野博史
平田晋太郎
室山雅和
山崎雄介
森胁俊贵
饭野阳一郎
栗岛一徳
村上洋介
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sony Semiconductor Solutions Corp
Sony Group Corp
Original Assignee
Sony Semiconductor Solutions Corp
Sony Group Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sony Semiconductor Solutions Corp, Sony Group Corp filed Critical Sony Semiconductor Solutions Corp
Publication of CN115053347A publication Critical patent/CN115053347A/zh
Withdrawn legal-status Critical Current

Links

Images

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/10—Integrated devices
    • H10F39/12—Image sensors
    • H10F39/191—Photoconductor image sensors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K39/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic radiation-sensitive element covered by group H10K30/00
    • H10K39/30—Devices controlled by radiation
    • H10K39/32—Organic image sensors
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/60—Noise processing, e.g. detecting, correcting, reducing or removing noise
    • H04N25/62—Detection or reduction of noise due to excess charges produced by the exposure, e.g. smear, blooming, ghost image, crosstalk or leakage between pixels
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/10—Integrated devices
    • H10F39/12—Image sensors
    • H10F39/18—Complementary metal-oxide-semiconductor [CMOS] image sensors; Photodiode array image sensors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/802—Geometry or disposition of elements in pixels, e.g. address-lines or gate electrodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/803—Pixels having integrated switching, control, storage or amplification elements
    • H10F39/8033—Photosensitive area
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/803—Pixels having integrated switching, control, storage or amplification elements
    • H10F39/8037—Pixels having integrated switching, control, storage or amplification elements the integrated elements comprising a transistor
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/805—Coatings
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/811—Interconnections
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K19/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic element specially adapted for rectifying, amplifying, oscillating or switching, covered by group H10K10/00
    • H10K19/20—Integrated devices, or assemblies of multiple devices, comprising at least one organic element specially adapted for rectifying, amplifying, oscillating or switching, covered by group H10K10/00 comprising components having an active region that includes an inorganic semiconductor
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/10—Integrated devices
    • H10F39/12—Image sensors
    • H10F39/18—Complementary metal-oxide-semiconductor [CMOS] image sensors; Photodiode array image sensors
    • H10F39/182—Colour image sensors
    • H10F39/1825—Multicolour image sensors having stacked structure, e.g. NPN, NPNPN or multiple quantum well [MQW] structures
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/549—Organic PV cells

Landscapes

  • Engineering & Computer Science (AREA)
  • Multimedia (AREA)
  • Signal Processing (AREA)
  • Chemical & Material Sciences (AREA)
  • Inorganic Chemistry (AREA)
  • Solid State Image Pick-Up Elements (AREA)
CN202180012673.7A 2020-03-31 2021-03-24 摄像元件和摄像装置 Withdrawn CN115053347A (zh)

Applications Claiming Priority (5)

Application Number Priority Date Filing Date Title
JP2020064018 2020-03-31
JP2020-064018 2020-03-31
JP2021-045946 2021-03-19
JP2021045946 2021-03-19
PCT/JP2021/012399 WO2021200508A1 (ja) 2020-03-31 2021-03-24 撮像素子および撮像装置

Publications (1)

Publication Number Publication Date
CN115053347A true CN115053347A (zh) 2022-09-13

Family

ID=77928370

Family Applications (1)

Application Number Title Priority Date Filing Date
CN202180012673.7A Withdrawn CN115053347A (zh) 2020-03-31 2021-03-24 摄像元件和摄像装置

Country Status (7)

Country Link
US (1) US20230124165A1 (https=)
EP (1) EP4131380A4 (https=)
JP (1) JPWO2021200508A1 (https=)
KR (1) KR102776688B1 (https=)
CN (1) CN115053347A (https=)
TW (1) TWI876005B (https=)
WO (1) WO2021200508A1 (https=)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR102653048B1 (ko) * 2018-04-20 2024-04-01 소니그룹주식회사 촬상 소자, 적층형 촬상 소자 및 고체 촬상 장치
CN118830086A (zh) * 2022-03-25 2024-10-22 索尼半导体解决方案公司 摄像元件和摄像元件的制造方法以及光检测装置
WO2025018087A1 (ja) * 2023-07-14 2025-01-23 ソニーセミコンダクタソリューションズ株式会社 光検出装置
WO2025100109A1 (ja) * 2023-11-09 2025-05-15 ソニーセミコンダクタソリューションズ株式会社 光検出素子および光検出装置

Family Cites Families (17)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR101861650B1 (ko) * 2011-10-17 2018-05-29 삼성전자주식회사 이미지 센서, 이를 포함하는 전자 시스템 및 그 이미지 센싱 방법
CN106537898B (zh) * 2014-07-25 2020-07-28 株式会社半导体能源研究所 成像装置
KR102355558B1 (ko) 2014-07-31 2022-01-27 삼성전자주식회사 이미지 센서
JP2016063165A (ja) * 2014-09-19 2016-04-25 株式会社東芝 撮像素子及び固体撮像装置
US10373991B2 (en) * 2015-08-19 2019-08-06 Semiconductor Energy Laboratory Co., Ltd. Imaging device, operating method thereof, and electronic device
JP6780421B2 (ja) 2016-03-01 2020-11-04 ソニー株式会社 撮像素子、積層型撮像素子及び固体撮像装置、並びに、固体撮像装置の駆動方法
JP2018046039A (ja) * 2016-09-12 2018-03-22 ソニーセミコンダクタソリューションズ株式会社 固体撮像素子および固体撮像装置
TWI770159B (zh) * 2017-04-21 2022-07-11 日商索尼股份有限公司 攝像元件、積層型攝像元件及固體攝像裝置
CN111033740A (zh) 2017-08-16 2020-04-17 索尼公司 摄像元件、层叠型摄像元件和固态摄像装置
JP2019036641A (ja) * 2017-08-16 2019-03-07 ソニー株式会社 撮像素子、積層型撮像素子及び固体撮像装置
EP3723132B1 (en) * 2017-12-05 2022-08-24 Sony Group Corporation Imaging element, laminate-type imaging element, and solid-state imaging device
KR102653048B1 (ko) * 2018-04-20 2024-04-01 소니그룹주식회사 촬상 소자, 적층형 촬상 소자 및 고체 촬상 장치
TWI800636B (zh) * 2018-04-20 2023-05-01 日商索尼股份有限公司 攝像元件、積層型攝像元件及固體攝像裝置
TWI820114B (zh) * 2018-04-20 2023-11-01 日商索尼股份有限公司 攝像元件、積層型攝像元件及固體攝像裝置
CN112385044B (zh) * 2018-07-17 2024-09-17 索尼半导体解决方案公司 摄像元件、层叠型摄像元件和固态摄像装置
JP7170170B2 (ja) 2018-10-19 2022-11-14 パナソニックＩｐマネジメント株式会社 エンコーダおよびそれを備えたブラシレスモータ
JP7392971B2 (ja) 2019-09-20 2023-12-06 岐阜プラスチック工業株式会社 中空構造体及びその製造方法

Also Published As

Publication number Publication date
EP4131380A1 (en) 2023-02-08
JPWO2021200508A1 (https=) 2021-10-07
KR20220160559A (ko) 2022-12-06
US20230124165A1 (en) 2023-04-20
TW202145548A (zh) 2021-12-01
KR102776688B1 (ko) 2025-03-11
TWI876005B (zh) 2025-03-11
WO2021200508A1 (ja) 2021-10-07
EP4131380A4 (en) 2023-10-04

Similar Documents

Publication Publication Date Title
US20250008751A1 (en) Image pickup element, stacked image pickup element, and solid image pickup apparatus
CN111066166B (zh) 光电转换器件和成像装置
TWI891386B (zh) 固體攝像元件
CN112514073B (zh) 摄像元件和摄像装置
KR102776688B1 (ko) 촬상 소자 및 촬상 장치
JP7753193B2 (ja) 撮像素子および撮像装置
CN113302761A (zh) 摄像元件和摄像装置
CN111316460B (zh) 光电转换元件和固态摄像器件
US20230276641A1 (en) Photoelectric conversion element and imaging device
US20250194332A1 (en) Photoelectric conversion element and photodetector
JP7835743B2 (ja) 光電変換素子および撮像装置
JP7658283B2 (ja) 撮像素子および撮像装置
WO2024171854A1 (ja) 光電変換素子および光検出装置ならびに電子機器
CN112424938A (zh) 固体摄像装置
CN118830086A (zh) 摄像元件和摄像元件的制造方法以及光检测装置
CN117652031A (zh) 摄像元件和摄像装置
US20250344565A1 (en) Photoelectric conversion element, imaging device, and electronic apparatus
WO2025100109A1 (ja) 光検出素子および光検出装置
WO2025052890A1 (ja) 光検出装置および電子機器
WO2025121007A1 (ja) 光検出装置
CN115552652A (zh) 光电转换元件和成像装置
WO2026074912A1 (ja) 光検出装置および電子機器
WO2023162982A1 (ja) 光電変換素子および光検出装置ならびに電子機器
CN118696618A (zh) 光电转换元件、光检测装置和光检测系统
CN118104415A (zh) 有机半导体膜、光电转换元件和成像装置

Legal Events

Date Code Title Description
PB01 Publication
PB01 Publication
SE01 Entry into force of request for substantive examination
SE01 Entry into force of request for substantive examination
WW01 Invention patent application withdrawn after publication

Application publication date: 20220913

WW01 Invention patent application withdrawn after publication