JPWO2021200174A1 - - Google Patents

Info

Publication number
JPWO2021200174A1
JPWO2021200174A1 JP2022511857A JP2022511857A JPWO2021200174A1 JP WO2021200174 A1 JPWO2021200174 A1 JP WO2021200174A1 JP 2022511857 A JP2022511857 A JP 2022511857A JP 2022511857 A JP2022511857 A JP 2022511857A JP WO2021200174 A1 JPWO2021200174 A1 JP WO2021200174A1
Authority
JP
Japan
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2022511857A
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Publication of JPWO2021200174A1 publication Critical patent/JPWO2021200174A1/ja
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H01L27/14601—Structural or functional details thereof
    • H01L27/14636—Interconnect structures
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H01L27/14601—Structural or functional details thereof
    • H01L27/14609—Pixel-elements with integrated switching, control, storage or amplification elements
    • H01L27/14612—Pixel-elements with integrated switching, control, storage or amplification elements involving a transistor
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H01L27/14601—Structural or functional details thereof
    • H01L27/14634—Assemblies, i.e. Hybrid structures
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H01L27/14601—Structural or functional details thereof
    • H01L27/14641—Electronic components shared by two or more pixel-elements, e.g. one amplifier shared by two pixel elements
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H01L27/14643—Photodiode arrays; MOS imagers
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/70—SSIS architectures; Circuits associated therewith
    • H04N25/76—Addressed sensors, e.g. MOS or CMOS sensors
    • H04N25/77—Pixel circuitry, e.g. memories, A/D converters, pixel amplifiers, shared circuits or shared components
    • H04N25/772—Pixel circuitry, e.g. memories, A/D converters, pixel amplifiers, shared circuits or shared components comprising A/D, V/T, V/F, I/T or I/F converters
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/70—SSIS architectures; Circuits associated therewith
    • H04N25/79—Arrangements of circuitry being divided between different or multiple substrates, chips or circuit boards, e.g. stacked image sensors

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Power Engineering (AREA)
  • Electromagnetism (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Multimedia (AREA)
  • Signal Processing (AREA)
  • Solid State Image Pick-Up Elements (AREA)
JP2022511857A 2020-03-31 2021-03-17 Pending JPWO2021200174A1 (ja)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2020064019 2020-03-31
PCT/JP2021/010927 WO2021200174A1 (ja) 2020-03-31 2021-03-17 撮像装置および電子機器

Publications (1)

Publication Number Publication Date
JPWO2021200174A1 true JPWO2021200174A1 (ja) 2021-10-07

Family

ID=77927237

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2022511857A Pending JPWO2021200174A1 (ja) 2020-03-31 2021-03-17

Country Status (5)

Country Link
US (1) US20230139176A1 (ja)
JP (1) JPWO2021200174A1 (ja)
CN (1) CN115335999A (ja)
DE (1) DE112021002028T5 (ja)
WO (1) WO2021200174A1 (ja)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TW202329439A (zh) * 2021-12-10 2023-07-16 日商索尼半導體解決方案公司 光檢測裝置及電子機器
JP2023088634A (ja) * 2021-12-15 2023-06-27 ソニーセミコンダクタソリューションズ株式会社 固体撮像装置及び電子機器

Family Cites Families (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6914227B2 (en) * 2001-06-25 2005-07-05 Canon Kabushiki Kaisha Image sensing apparatus capable of outputting image by converting resolution by adding and reading out a plurality of pixels, its control method, and image sensing system
JP4752447B2 (ja) * 2005-10-21 2011-08-17 ソニー株式会社 固体撮像装置およびカメラ
JP4835710B2 (ja) 2009-03-17 2011-12-14 ソニー株式会社 固体撮像装置、固体撮像装置の製造方法、固体撮像装置の駆動方法、及び電子機器
JP5820620B2 (ja) * 2011-05-25 2015-11-24 オリンパス株式会社 固体撮像装置、撮像装置、および信号読み出し方法
US9257468B2 (en) * 2012-11-21 2016-02-09 Olympus Corporation Solid-state imaging device, imaging device, and signal reading medium that accumulates an amplified signal without digitization
JP5930158B2 (ja) * 2011-11-21 2016-06-08 オリンパス株式会社 固体撮像装置、固体撮像装置の制御方法、および撮像装置
US8629524B2 (en) * 2012-04-27 2014-01-14 Taiwan Semiconductor Manufacturing Company, Ltd. Apparatus for vertically integrated backside illuminated image sensors
US9654712B2 (en) * 2015-10-07 2017-05-16 Semiconductor Components Industries, Llc Pixels with a global shutter and high dynamic range
JP2018117102A (ja) * 2017-01-20 2018-07-26 ソニーセミコンダクタソリューションズ株式会社 半導体装置
KR102380823B1 (ko) * 2017-08-16 2022-04-01 삼성전자주식회사 발열체를 포함하는 칩 구조체
JP2020047734A (ja) * 2018-09-18 2020-03-26 ソニーセミコンダクタソリューションズ株式会社 固体撮像装置及び電子機器
JP2020064019A (ja) 2018-10-19 2020-04-23 株式会社ミツトヨ 測定データ収集装置及びプログラム
US10791292B1 (en) * 2019-04-30 2020-09-29 Semiconductor Components Industries, Llc Image sensors having high dynamic range imaging pixels

Also Published As

Publication number Publication date
CN115335999A (zh) 2022-11-11
WO2021200174A1 (ja) 2021-10-07
US20230139176A1 (en) 2023-05-04
DE112021002028T5 (de) 2023-01-12

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Legal Events

Date Code Title Description
A621 Written request for application examination

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Effective date: 20240228