JPWO2021200168A1 - - Google Patents

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Publication number
JPWO2021200168A1
JPWO2021200168A1 JP2022511852A JP2022511852A JPWO2021200168A1 JP WO2021200168 A1 JPWO2021200168 A1 JP WO2021200168A1 JP 2022511852 A JP2022511852 A JP 2022511852A JP 2022511852 A JP2022511852 A JP 2022511852A JP WO2021200168 A1 JPWO2021200168 A1 JP WO2021200168A1
Authority
JP
Japan
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2022511852A
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Publication of JPWO2021200168A1 publication Critical patent/JPWO2021200168A1/ja
Pending legal-status Critical Current

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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/11—Comprising a photonic bandgap structure
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/04—Processes or apparatus for excitation, e.g. pumping, e.g. by electron beams
    • H01S5/042—Electrical excitation ; Circuits therefor
    • H01S5/0425—Electrodes, e.g. characterised by the structure
    • H01S5/04256—Electrodes, e.g. characterised by the structure characterised by the configuration
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/18—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities
    • H01S5/185—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only horizontal cavities, e.g. horizontal cavity surface-emitting lasers [HCSEL]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region
    • H01S5/305—Structure or shape of the active region; Materials used for the active region characterised by the doping materials used in the laser structure
    • H01S5/3095—Tunnel junction
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/04—Processes or apparatus for excitation, e.g. pumping, e.g. by electron beams
    • H01S5/042—Electrical excitation ; Circuits therefor
    • H01S5/0425—Electrodes, e.g. characterised by the structure
    • H01S5/04254—Electrodes, e.g. characterised by the structure characterised by the shape
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/04—Processes or apparatus for excitation, e.g. pumping, e.g. by electron beams
    • H01S5/042—Electrical excitation ; Circuits therefor
    • H01S5/0425—Electrodes, e.g. characterised by the structure
    • H01S5/04256—Electrodes, e.g. characterised by the structure characterised by the configuration
    • H01S5/04257—Electrodes, e.g. characterised by the structure characterised by the configuration having positive and negative electrodes on the same side of the substrate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
    • H01S5/2004—Confining in the direction perpendicular to the layer structure
    • H01S5/2018—Optical confinement, e.g. absorbing-, reflecting- or waveguide-layers
    • H01S5/2027—Reflecting region or layer, parallel to the active layer, e.g. to modify propagation of the mode in the laser or to influence transverse modes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region
    • H01S5/34—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers
    • H01S5/343—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser
    • H01S5/34313—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser with a well layer having only As as V-compound, e.g. AlGaAs, InGaAs

Landscapes

  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Optics & Photonics (AREA)
  • Geometry (AREA)
  • Semiconductor Lasers (AREA)
JP2022511852A 2020-03-31 2021-03-17 Pending JPWO2021200168A1 (ja)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2020062586 2020-03-31
PCT/JP2021/010882 WO2021200168A1 (ja) 2020-03-31 2021-03-17 ２次元フォトニック結晶レーザ

Publications (1)

Publication Number Publication Date
JPWO2021200168A1 true JPWO2021200168A1 (ja) 2021-10-07

Family

ID=77928198

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2022511852A Pending JPWO2021200168A1 (ja) 2020-03-31 2021-03-17

Country Status (5)

Country Link
US (1) US20230361530A1 (ja)
EP (1) EP4131677A4 (ja)
JP (1) JPWO2021200168A1 (ja)
CN (1) CN115398761A (ja)
WO (1) WO2021200168A1 (ja)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2023151908A1 (en) * 2022-02-08 2023-08-17 Ams-Osram International Gmbh Laser diode component
WO2024043316A1 (ja) * 2022-08-25 2024-02-29 国立大学法人京都大学 ２次元フォトニック結晶レーザ
CN115995757B (zh) * 2023-03-23 2023-06-16 香港中文大学（深圳） 一种光子晶体电泵浦表面发射激光器及其制备方法

Family Cites Families (17)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2002368334A (ja) * 2001-03-26 2002-12-20 Seiko Epson Corp 面発光レーザ、フォトダイオード、それらの製造方法及びそれらを用いた光電気混載回路
JP2005277026A (ja) * 2004-03-24 2005-10-06 Fuji Photo Film Co Ltd 半導体レーザ素子
JP4793820B2 (ja) 2006-03-20 2011-10-12 国立大学法人京都大学 ２次元フォトニック結晶面発光レーザ光源
JP4948012B2 (ja) * 2006-03-24 2012-06-06 古河電気工業株式会社 面発光レーザ素子および面発光レーザ素子の製造方法
JP4350774B2 (ja) * 2007-07-31 2009-10-21 キヤノン株式会社 面発光レーザ
JP2010093127A (ja) * 2008-10-09 2010-04-22 Sumitomo Electric Ind Ltd 半導体発光装置
JP5854417B2 (ja) 2010-07-30 2016-02-09 国立大学法人京都大学 ２次元フォトニック結晶レーザ
DE112011102431B4 (de) * 2010-10-04 2014-03-06 Furukawa Electric Co., Ltd., Elektronische Einrichtung, flächenemittierender Laser, flächenemittierendes Laser-Array, Lichtquelle, optisches Modul
JP2012119408A (ja) * 2010-11-30 2012-06-21 Nippon Telegr & Teleph Corp <Ntt> 半導体素子、半導体光素子及び半導体集積素子
US8653550B2 (en) * 2010-12-17 2014-02-18 The United States Of America, As Represented By The Secretary Of The Navy Inverted light emitting diode having plasmonically enhanced emission
JP5678806B2 (ja) * 2011-06-07 2015-03-04 株式会社デンソー 半導体レーザ及びその製造方法
JP2013161965A (ja) * 2012-02-06 2013-08-19 Kyoto Univ 半導体発光素子
JP6013948B2 (ja) * 2013-03-13 2016-10-25 ルネサスエレクトロニクス株式会社 半導体装置
WO2017038595A1 (ja) * 2015-08-28 2017-03-09 国立大学法人京都大学 ２次元フォトニック結晶面発光レーザ
JP6868864B2 (ja) 2017-03-06 2021-05-12 スタンレー電気株式会社 照明装置
JP6951890B2 (ja) * 2017-07-10 2021-10-20 浜松ホトニクス株式会社 半導体レーザ素子
US11476383B2 (en) * 2018-02-02 2022-10-18 Cornell University Platforms enabled by buried tunnel junction for integrated photonic and electronic systems

Also Published As

Publication number Publication date
CN115398761A (zh) 2022-11-25
EP4131677A4 (en) 2023-11-01
US20230361530A1 (en) 2023-11-09
EP4131677A1 (en) 2023-02-08
WO2021200168A1 (ja) 2021-10-07

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