JPWO2021199789A1 - - Google Patents

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Publication number
JPWO2021199789A1
JPWO2021199789A1 JP2022511656A JP2022511656A JPWO2021199789A1 JP WO2021199789 A1 JPWO2021199789 A1 JP WO2021199789A1 JP 2022511656 A JP2022511656 A JP 2022511656A JP 2022511656 A JP2022511656 A JP 2022511656A JP WO2021199789 A1 JPWO2021199789 A1 JP WO2021199789A1
Authority
JP
Japan
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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Application number
JP2022511656A
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JP7365494B2 (ja
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Publication of JPWO2021199789A1 publication Critical patent/JPWO2021199789A1/ja
Application granted granted Critical
Publication of JP7365494B2 publication Critical patent/JP7365494B2/ja
Active legal-status Critical Current
Anticipated expiration legal-status Critical

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Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/26—Processing photosensitive materials; Apparatus therefor
    • G03F7/38—Treatment before imagewise removal, e.g. prebaking
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/0045—Photosensitive materials with organic non-macromolecular light-sensitive compounds not otherwise provided for, e.g. dissolution inhibitors
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/038—Macromolecular compounds which are rendered insoluble or differentially wettable
    • G03F7/0382—Macromolecular compounds which are rendered insoluble or differentially wettable the macromolecular compound being present in a chemically amplified negative photoresist composition
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/039—Macromolecular compounds which are photodegradable, e.g. positive electron resists
    • G03F7/0392—Macromolecular compounds which are photodegradable, e.g. positive electron resists the macromolecular compound being present in a chemically amplified positive photoresist composition
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/039—Macromolecular compounds which are photodegradable, e.g. positive electron resists
    • G03F7/0392—Macromolecular compounds which are photodegradable, e.g. positive electron resists the macromolecular compound being present in a chemically amplified positive photoresist composition
    • G03F7/0397—Macromolecular compounds which are photodegradable, e.g. positive electron resists the macromolecular compound being present in a chemically amplified positive photoresist composition the macromolecular compound having an alicyclic moiety in a side chain
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/26—Processing photosensitive materials; Apparatus therefor
    • G03F7/30—Imagewise removal using liquid means
    • G03F7/32—Liquid compositions therefor, e.g. developers

Landscapes

  • Physics & Mathematics (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • General Physics & Mathematics (AREA)
  • Materials For Photolithography (AREA)
  • Photosensitive Polymer And Photoresist Processing (AREA)
JP2022511656A 2020-03-31 2021-02-22 パターン形成方法、感活性光線性又は感放射線性組成物、電子デバイスの製造方法 Active JP7365494B2 (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2020063236 2020-03-31
JP2020063236 2020-03-31
PCT/JP2021/006577 WO2021199789A1 (ja) 2020-03-31 2021-02-22 パターン形成方法、感活性光線性又は感放射線性組成物、電子デバイスの製造方法

Publications (2)

Publication Number Publication Date
JPWO2021199789A1 true JPWO2021199789A1 (ja) 2021-10-07
JP7365494B2 JP7365494B2 (ja) 2023-10-19

Family

ID=77928076

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2022511656A Active JP7365494B2 (ja) 2020-03-31 2021-02-22 パターン形成方法、感活性光線性又は感放射線性組成物、電子デバイスの製造方法

Country Status (4)

Country Link
US (1) US20230087940A1 (ja)
JP (1) JP7365494B2 (ja)
KR (1) KR20220149563A (ja)
WO (1) WO2021199789A1 (ja)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN113999342B (zh) * 2021-10-25 2022-08-12 厦门大学 一种可迁移聚合物基功能改性剂及其制备方法和应用
JP2023182038A (ja) 2022-06-14 2023-12-26 信越化学工業株式会社 オニウム塩、レジスト組成物、及びパターン形成方法
WO2024084970A1 (ja) * 2022-10-21 2024-04-25 富士フイルム株式会社 感活性光線性又は感放射線性樹脂組成物、感活性光線性又は感放射線性膜、パターン形成方法、及び電子デバイスの製造方法
JP2024077641A (ja) 2022-11-29 2024-06-10 信越化学工業株式会社 レジスト組成物及びパターン形成方法

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH1195450A (ja) * 1997-09-19 1999-04-09 Fujitsu Ltd レジストパターン形成方法
JP2005150182A (ja) * 2003-11-12 2005-06-09 Matsushita Electric Ind Co Ltd パターン形成方法
JP2011123469A (ja) * 2009-06-04 2011-06-23 Fujifilm Corp 感活性光線または感放射線性樹脂組成物を用いたパターン形成方法及びパターン
WO2015190174A1 (ja) * 2014-06-13 2015-12-17 富士フイルム株式会社 パターン形成方法、感活性光線性又は感放射線性樹脂組成物、感活性光線性又は感放射線性膜、電子デバイスの製造方法及び電子デバイス
WO2019188595A1 (ja) * 2018-03-26 2019-10-03 富士フイルム株式会社 感光性樹脂組成物及びその製造方法、レジスト膜、パターン形成方法、並びに、電子デバイスの製造方法

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP7249094B2 (ja) 2016-04-04 2023-03-30 住友化学株式会社 樹脂、レジスト組成物及びレジストパターンの製造方法

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH1195450A (ja) * 1997-09-19 1999-04-09 Fujitsu Ltd レジストパターン形成方法
JP2005150182A (ja) * 2003-11-12 2005-06-09 Matsushita Electric Ind Co Ltd パターン形成方法
JP2011123469A (ja) * 2009-06-04 2011-06-23 Fujifilm Corp 感活性光線または感放射線性樹脂組成物を用いたパターン形成方法及びパターン
WO2015190174A1 (ja) * 2014-06-13 2015-12-17 富士フイルム株式会社 パターン形成方法、感活性光線性又は感放射線性樹脂組成物、感活性光線性又は感放射線性膜、電子デバイスの製造方法及び電子デバイス
WO2019188595A1 (ja) * 2018-03-26 2019-10-03 富士フイルム株式会社 感光性樹脂組成物及びその製造方法、レジスト膜、パターン形成方法、並びに、電子デバイスの製造方法

Also Published As

Publication number Publication date
WO2021199789A1 (ja) 2021-10-07
US20230087940A1 (en) 2023-03-23
TW202138919A (zh) 2021-10-16
JP7365494B2 (ja) 2023-10-19
KR20220149563A (ko) 2022-11-08

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