JPWO2021186908A1 - - Google Patents

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Publication number
JPWO2021186908A1
JPWO2021186908A1 JP2022508108A JP2022508108A JPWO2021186908A1 JP WO2021186908 A1 JPWO2021186908 A1 JP WO2021186908A1 JP 2022508108 A JP2022508108 A JP 2022508108A JP 2022508108 A JP2022508108 A JP 2022508108A JP WO2021186908 A1 JPWO2021186908 A1 JP WO2021186908A1
Authority
JP
Japan
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP2022508108A
Other languages
Japanese (ja)
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JP7645236B2 (ja
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
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Publication of JPWO2021186908A1 publication Critical patent/JPWO2021186908A1/ja
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Publication of JP7645236B2 publication Critical patent/JP7645236B2/ja
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Anticipated expiration legal-status Critical

Links

Classifications

    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B5/00—Optical elements other than lenses
    • G02B5/20—Filters
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/70—SSIS architectures; Circuits associated therewith
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/10—Integrated devices
    • H10F39/12—Image sensors

Landscapes

  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Multimedia (AREA)
  • Signal Processing (AREA)
  • General Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • Solid State Image Pick-Up Elements (AREA)
JP2022508108A 2020-03-17 2021-01-27 固体撮像装置 Active JP7645236B2 (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2020046217 2020-03-17
JP2020046217 2020-03-17
PCT/JP2021/002901 WO2021186908A1 (ja) 2020-03-17 2021-01-27 固体撮像装置

Publications (2)

Publication Number Publication Date
JPWO2021186908A1 true JPWO2021186908A1 (enExample) 2021-09-23
JP7645236B2 JP7645236B2 (ja) 2025-03-13

Family

ID=77771166

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2022508108A Active JP7645236B2 (ja) 2020-03-17 2021-01-27 固体撮像装置

Country Status (2)

Country Link
JP (1) JP7645236B2 (enExample)
WO (1) WO2021186908A1 (enExample)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2024095743A1 (ja) * 2022-11-01 2024-05-10 ソニーセミコンダクタソリューションズ株式会社 固体撮像装置およびその製造方法、並びに電子機器

Citations (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2009014459A (ja) * 2007-07-03 2009-01-22 Hamamatsu Photonics Kk 裏面入射型測距センサ及び測距装置
JP2013033864A (ja) * 2011-08-02 2013-02-14 Sony Corp 固体撮像素子の製造方法、固体撮像素子、および電子機器
US20130057738A1 (en) * 2011-09-02 2013-03-07 Kabushiki Kaisha Toshiba Solid-state imaging element
US20130082343A1 (en) * 2011-10-04 2013-04-04 Canon Kabushiki Kaisha Photoelectric conversion device, method of manufacturing the same and photoelectric conversion system
WO2017034712A1 (en) * 2015-08-21 2017-03-02 Qualcomm Incorporated System and method to extend near infrared spectral response for imaging systems
JP2017152511A (ja) * 2016-02-24 2017-08-31 ソニー株式会社 撮像装置
WO2017187957A1 (ja) * 2016-04-25 2017-11-02 ソニー株式会社 固体撮像素子およびその製造方法、並びに電子機器
WO2019124562A1 (ja) * 2017-12-22 2019-06-27 ソニーセミコンダクタソリューションズ株式会社 固体撮像装置及び電子機器
US20190237502A1 (en) * 2018-01-30 2019-08-01 Huaian Imaging Device Manufacturer Corporation Image sensor and method for manufacturing image sensor
WO2020012984A1 (ja) * 2018-07-13 2020-01-16 ソニーセミコンダクタソリューションズ株式会社 センサ素子および電子機器

Patent Citations (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2009014459A (ja) * 2007-07-03 2009-01-22 Hamamatsu Photonics Kk 裏面入射型測距センサ及び測距装置
JP2013033864A (ja) * 2011-08-02 2013-02-14 Sony Corp 固体撮像素子の製造方法、固体撮像素子、および電子機器
US20130057738A1 (en) * 2011-09-02 2013-03-07 Kabushiki Kaisha Toshiba Solid-state imaging element
JP2013055202A (ja) * 2011-09-02 2013-03-21 Toshiba Corp 固体撮像素子
US20130082343A1 (en) * 2011-10-04 2013-04-04 Canon Kabushiki Kaisha Photoelectric conversion device, method of manufacturing the same and photoelectric conversion system
JP2013093553A (ja) * 2011-10-04 2013-05-16 Canon Inc 光電変換装置及びその製造方法、並びに光電変換システム
WO2017034712A1 (en) * 2015-08-21 2017-03-02 Qualcomm Incorporated System and method to extend near infrared spectral response for imaging systems
JP2017152511A (ja) * 2016-02-24 2017-08-31 ソニー株式会社 撮像装置
WO2017187957A1 (ja) * 2016-04-25 2017-11-02 ソニー株式会社 固体撮像素子およびその製造方法、並びに電子機器
US20190043901A1 (en) * 2016-04-25 2019-02-07 Sony Corporation Solid-state imaging element, method for manufacturing the same, and electronic apparatus
WO2019124562A1 (ja) * 2017-12-22 2019-06-27 ソニーセミコンダクタソリューションズ株式会社 固体撮像装置及び電子機器
US20210366964A1 (en) * 2017-12-22 2021-11-25 Sony Semiconductor Solutions Corporation Solid-state imaging device and electronic device
US20190237502A1 (en) * 2018-01-30 2019-08-01 Huaian Imaging Device Manufacturer Corporation Image sensor and method for manufacturing image sensor
WO2020012984A1 (ja) * 2018-07-13 2020-01-16 ソニーセミコンダクタソリューションズ株式会社 センサ素子および電子機器
US20210288192A1 (en) * 2018-07-13 2021-09-16 Sony Semiconductor Solutions Corporation Sensor element and electronic device

Also Published As

Publication number Publication date
JP7645236B2 (ja) 2025-03-13
WO2021186908A1 (ja) 2021-09-23

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