JPWO2021182182A1 - - Google Patents

Info

Publication number
JPWO2021182182A1
JPWO2021182182A1 JP2022505942A JP2022505942A JPWO2021182182A1 JP WO2021182182 A1 JPWO2021182182 A1 JP WO2021182182A1 JP 2022505942 A JP2022505942 A JP 2022505942A JP 2022505942 A JP2022505942 A JP 2022505942A JP WO2021182182 A1 JPWO2021182182 A1 JP WO2021182182A1
Authority
JP
Japan
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2022505942A
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Publication of JPWO2021182182A1 publication Critical patent/JPWO2021182182A1/ja
Priority to JP2023213680A priority Critical patent/JP2024029021A/ja
Pending legal-status Critical Current

Links

Classifications

    • BPERFORMING OPERATIONS; TRANSPORTING
    • B08CLEANING
    • B08BCLEANING IN GENERAL; PREVENTION OF FOULING IN GENERAL
    • B08B3/00Cleaning by methods involving the use or presence of liquid or steam
    • B08B3/04Cleaning involving contact with liquid
    • B08B3/08Cleaning involving contact with liquid the liquid having chemical or dissolving effect
    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/26Processing photosensitive materials; Apparatus therefor
    • G03F7/30Imagewise removal using liquid means
    • G03F7/32Liquid compositions therefor, e.g. developers
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/027Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/304Mechanical treatment, e.g. grinding, polishing, cutting

Landscapes

  • Engineering & Computer Science (AREA)
  • General Physics & Mathematics (AREA)
  • Physics & Mathematics (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Power Engineering (AREA)
  • Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Photosensitive Polymer And Photoresist Processing (AREA)
  • Materials For Photolithography (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
JP2022505942A 2020-03-12 2021-03-02 Pending JPWO2021182182A1 (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2023213680A JP2024029021A (ja) 2020-03-12 2023-12-19 処理液、パターン形成方法

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2020042571 2020-03-12
PCT/JP2021/007923 WO2021182182A1 (ja) 2020-03-12 2021-03-02 処理液、パターン形成方法

Related Child Applications (1)

Application Number Title Priority Date Filing Date
JP2023213680A Division JP2024029021A (ja) 2020-03-12 2023-12-19 処理液、パターン形成方法

Publications (1)

Publication Number Publication Date
JPWO2021182182A1 true JPWO2021182182A1 (ja) 2021-09-16

Family

ID=77672040

Family Applications (2)

Application Number Title Priority Date Filing Date
JP2022505942A Pending JPWO2021182182A1 (ja) 2020-03-12 2021-03-02
JP2023213680A Pending JP2024029021A (ja) 2020-03-12 2023-12-19 処理液、パターン形成方法

Family Applications After (1)

Application Number Title Priority Date Filing Date
JP2023213680A Pending JP2024029021A (ja) 2020-03-12 2023-12-19 処理液、パターン形成方法

Country Status (2)

Country Link
JP (2) JPWO2021182182A1 (ja)
WO (1) WO2021182182A1 (ja)

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2010534358A (ja) * 2007-07-25 2010-11-04 スリーエム イノベイティブ プロパティズ カンパニー フッ素化組成物を用いて汚染を除去する方法
JP2011215244A (ja) * 2010-03-31 2011-10-27 Hoya Corp レジスト層の現像剤、レジストパターンの形成方法及びモールドの製造方法
JP2012150443A (ja) * 2010-12-27 2012-08-09 Hoya Corp レジスト現像剤、レジストパターンの形成方法及びモールドの製造方法
JP2017134373A (ja) * 2016-01-29 2017-08-03 日本ゼオン株式会社 レジストパターン形成方法

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2007211203A (ja) * 2006-02-13 2007-08-23 Three M Innovative Properties Co フッ素含有化合物を含む洗浄剤組成物及びその使用方法
JP2011033842A (ja) * 2009-07-31 2011-02-17 Fujifilm Corp 化学増幅型レジスト組成物によるパターン形成用の処理液及びそれを用いたパターン形成方法

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2010534358A (ja) * 2007-07-25 2010-11-04 スリーエム イノベイティブ プロパティズ カンパニー フッ素化組成物を用いて汚染を除去する方法
JP2011215244A (ja) * 2010-03-31 2011-10-27 Hoya Corp レジスト層の現像剤、レジストパターンの形成方法及びモールドの製造方法
JP2012150443A (ja) * 2010-12-27 2012-08-09 Hoya Corp レジスト現像剤、レジストパターンの形成方法及びモールドの製造方法
JP2017134373A (ja) * 2016-01-29 2017-08-03 日本ゼオン株式会社 レジストパターン形成方法

Also Published As

Publication number Publication date
JP2024029021A (ja) 2024-03-05
WO2021182182A1 (ja) 2021-09-16

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