JPWO2021182182A1 - - Google Patents
Info
- Publication number
- JPWO2021182182A1 JPWO2021182182A1 JP2022505942A JP2022505942A JPWO2021182182A1 JP WO2021182182 A1 JPWO2021182182 A1 JP WO2021182182A1 JP 2022505942 A JP2022505942 A JP 2022505942A JP 2022505942 A JP2022505942 A JP 2022505942A JP WO2021182182 A1 JPWO2021182182 A1 JP WO2021182182A1
- Authority
- JP
- Japan
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B08—CLEANING
- B08B—CLEANING IN GENERAL; PREVENTION OF FOULING IN GENERAL
- B08B3/00—Cleaning by methods involving the use or presence of liquid or steam
- B08B3/04—Cleaning involving contact with liquid
- B08B3/08—Cleaning involving contact with liquid the liquid having chemical or dissolving effect
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/26—Processing photosensitive materials; Apparatus therefor
- G03F7/30—Imagewise removal using liquid means
- G03F7/32—Liquid compositions therefor, e.g. developers
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/304—Mechanical treatment, e.g. grinding, polishing, cutting
Landscapes
- Engineering & Computer Science (AREA)
- General Physics & Mathematics (AREA)
- Physics & Mathematics (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Power Engineering (AREA)
- Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- General Chemical & Material Sciences (AREA)
- Photosensitive Polymer And Photoresist Processing (AREA)
- Materials For Photolithography (AREA)
- Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
- Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2023213680A JP2024029021A (ja) | 2020-03-12 | 2023-12-19 | 処理液、パターン形成方法 |
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2020042571 | 2020-03-12 | ||
PCT/JP2021/007923 WO2021182182A1 (ja) | 2020-03-12 | 2021-03-02 | 処理液、パターン形成方法 |
Related Child Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2023213680A Division JP2024029021A (ja) | 2020-03-12 | 2023-12-19 | 処理液、パターン形成方法 |
Publications (1)
Publication Number | Publication Date |
---|---|
JPWO2021182182A1 true JPWO2021182182A1 (ja) | 2021-09-16 |
Family
ID=77672040
Family Applications (2)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2022505942A Pending JPWO2021182182A1 (ja) | 2020-03-12 | 2021-03-02 | |
JP2023213680A Pending JP2024029021A (ja) | 2020-03-12 | 2023-12-19 | 処理液、パターン形成方法 |
Family Applications After (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2023213680A Pending JP2024029021A (ja) | 2020-03-12 | 2023-12-19 | 処理液、パターン形成方法 |
Country Status (2)
Country | Link |
---|---|
JP (2) | JPWO2021182182A1 (ja) |
WO (1) | WO2021182182A1 (ja) |
Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2010534358A (ja) * | 2007-07-25 | 2010-11-04 | スリーエム イノベイティブ プロパティズ カンパニー | フッ素化組成物を用いて汚染を除去する方法 |
JP2011215244A (ja) * | 2010-03-31 | 2011-10-27 | Hoya Corp | レジスト層の現像剤、レジストパターンの形成方法及びモールドの製造方法 |
JP2012150443A (ja) * | 2010-12-27 | 2012-08-09 | Hoya Corp | レジスト現像剤、レジストパターンの形成方法及びモールドの製造方法 |
JP2017134373A (ja) * | 2016-01-29 | 2017-08-03 | 日本ゼオン株式会社 | レジストパターン形成方法 |
Family Cites Families (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2007211203A (ja) * | 2006-02-13 | 2007-08-23 | Three M Innovative Properties Co | フッ素含有化合物を含む洗浄剤組成物及びその使用方法 |
JP2011033842A (ja) * | 2009-07-31 | 2011-02-17 | Fujifilm Corp | 化学増幅型レジスト組成物によるパターン形成用の処理液及びそれを用いたパターン形成方法 |
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2021
- 2021-03-02 JP JP2022505942A patent/JPWO2021182182A1/ja active Pending
- 2021-03-02 WO PCT/JP2021/007923 patent/WO2021182182A1/ja active Application Filing
-
2023
- 2023-12-19 JP JP2023213680A patent/JP2024029021A/ja active Pending
Patent Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2010534358A (ja) * | 2007-07-25 | 2010-11-04 | スリーエム イノベイティブ プロパティズ カンパニー | フッ素化組成物を用いて汚染を除去する方法 |
JP2011215244A (ja) * | 2010-03-31 | 2011-10-27 | Hoya Corp | レジスト層の現像剤、レジストパターンの形成方法及びモールドの製造方法 |
JP2012150443A (ja) * | 2010-12-27 | 2012-08-09 | Hoya Corp | レジスト現像剤、レジストパターンの形成方法及びモールドの製造方法 |
JP2017134373A (ja) * | 2016-01-29 | 2017-08-03 | 日本ゼオン株式会社 | レジストパターン形成方法 |
Also Published As
Publication number | Publication date |
---|---|
JP2024029021A (ja) | 2024-03-05 |
WO2021182182A1 (ja) | 2021-09-16 |
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