JPWO2021140743A5 - - Google Patents

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Publication number
JPWO2021140743A5
JPWO2021140743A5 JP2021569740A JP2021569740A JPWO2021140743A5 JP WO2021140743 A5 JPWO2021140743 A5 JP WO2021140743A5 JP 2021569740 A JP2021569740 A JP 2021569740A JP 2021569740 A JP2021569740 A JP 2021569740A JP WO2021140743 A5 JPWO2021140743 A5 JP WO2021140743A5
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Japan
Prior art keywords
metal
diffraction method
intermetallic compound
conductor
electron beam
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JP2021569740A
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English (en)
Japanese (ja)
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JPWO2021140743A1 (https=
JP7627879B2 (ja
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Priority claimed from PCT/JP2020/042355 external-priority patent/WO2021140743A1/ja
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Publication of JPWO2021140743A5 publication Critical patent/JPWO2021140743A5/ja
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JP2021569740A 2020-01-10 2020-11-13 光デバイス Active JP7627879B2 (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2020002653 2020-01-10
JP2020002653 2020-01-10
PCT/JP2020/042355 WO2021140743A1 (ja) 2020-01-10 2020-11-13 光デバイス

Publications (3)

Publication Number Publication Date
JPWO2021140743A1 JPWO2021140743A1 (https=) 2021-07-15
JPWO2021140743A5 true JPWO2021140743A5 (https=) 2022-09-05
JP7627879B2 JP7627879B2 (ja) 2025-02-07

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JP2021569740A Active JP7627879B2 (ja) 2020-01-10 2020-11-13 光デバイス

Country Status (4)

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US (1) US20220310868A1 (https=)
JP (1) JP7627879B2 (https=)
CN (1) CN114868259A (https=)
WO (1) WO2021140743A1 (https=)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20230057769A (ko) * 2021-10-22 2023-05-02 삼성전자주식회사 포토다이오드 및 이를 포함하는 전자 장치
JP7657698B2 (ja) * 2021-10-26 2025-04-07 デクセリアルズ株式会社 光学フィルタ、フォトダイオードモジュール、及び光学フィルタの製造方法
DE102021213747B3 (de) * 2021-12-02 2023-02-09 BRANDENBURGISCHE TECHNISCHE UNIVERSITÄT COTTBUS-SENFTENBERG, Körperschaft des öffentlichen Rechts Vorrichtung und Verfahren zur Absorption von elektromagnetischer Strahlung, System zur Verwendung in einem Bildsensor, sowie Verfahren zur Herstellung einer Vorrichtung zur Absorption von elektromagnetischer Strahlung

Family Cites Families (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0007108B1 (en) * 1978-07-18 1983-04-13 Nippon Telegraph and Telephone Public Corporation A method of manufacturing a diffraction grating structure
JP2007242669A (ja) * 2006-03-06 2007-09-20 Matsushita Electric Ind Co Ltd 半導体発光装置及びその製造方法
JP4835837B2 (ja) * 2006-03-31 2011-12-14 日本電気株式会社 フォトダイオードとその製造方法
JP5300344B2 (ja) * 2007-07-06 2013-09-25 キヤノン株式会社 光検出素子及び撮像素子、光検出方法及び撮像方法
JP5269527B2 (ja) * 2008-08-29 2013-08-21 株式会社東芝 半導体装置
TWI698031B (zh) * 2016-01-22 2020-07-01 日商王子控股股份有限公司 半導體發光元件用之基板，以及半導體發光元件用之基板的製造方法
CN106098817A (zh) * 2016-06-24 2016-11-09 中国科学院长春光学精密机械与物理研究所 光电子器件、半导体基板及其制作方法
JP6944315B2 (ja) * 2017-09-05 2021-10-06 浜松ホトニクス株式会社 光検出素子
CN110121789A (zh) * 2017-10-04 2019-08-13 松下知识产权经营株式会社 光器件、光电转换装置及燃料生成装置
JP2019169523A (ja) * 2018-03-22 2019-10-03 浜松ホトニクス株式会社 光検出素子

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