JPWO2021131966A5 - - Google Patents

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Publication number
JPWO2021131966A5
JPWO2021131966A5 JP2021567341A JP2021567341A JPWO2021131966A5 JP WO2021131966 A5 JPWO2021131966 A5 JP WO2021131966A5 JP 2021567341 A JP2021567341 A JP 2021567341A JP 2021567341 A JP2021567341 A JP 2021567341A JP WO2021131966 A5 JPWO2021131966 A5 JP WO2021131966A5
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JP
Japan
Prior art keywords
metal component
aln
polycrystalline layer
less
laminate according
Prior art date
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Application number
JP2021567341A
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English (en)
Japanese (ja)
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JPWO2021131966A1 (cg-RX-API-DMAC7.html
JP7620571B2 (ja
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Priority claimed from PCT/JP2020/046971 external-priority patent/WO2021131966A1/ja
Publication of JPWO2021131966A1 publication Critical patent/JPWO2021131966A1/ja
Publication of JPWO2021131966A5 publication Critical patent/JPWO2021131966A5/ja
Application granted granted Critical
Publication of JP7620571B2 publication Critical patent/JP7620571B2/ja
Active legal-status Critical Current
Anticipated expiration legal-status Critical

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JP2021567341A 2019-12-23 2020-12-16 ＡｌＮ積層板 Active JP7620571B2 (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2019231909 2019-12-23
JP2019231909 2019-12-23
PCT/JP2020/046971 WO2021131966A1 (ja) 2019-12-23 2020-12-16 ＡｌＮ積層板

Publications (3)

Publication Number Publication Date
JPWO2021131966A1 JPWO2021131966A1 (cg-RX-API-DMAC7.html) 2021-07-01
JPWO2021131966A5 true JPWO2021131966A5 (cg-RX-API-DMAC7.html) 2022-08-19
JP7620571B2 JP7620571B2 (ja) 2025-01-23

Family

ID=76575910

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2021567341A Active JP7620571B2 (ja) 2019-12-23 2020-12-16 ＡｌＮ積層板

Country Status (2)

Country Link
JP (1) JP7620571B2 (cg-RX-API-DMAC7.html)
WO (1) WO2021131966A1 (cg-RX-API-DMAC7.html)

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2860248B1 (fr) 2003-09-26 2006-02-17 Centre Nat Rech Scient Procede de realisation de substrats autosupportes de nitrures d'elements iii par hetero-epitaxie sur une couche sacrificielle
JP4825747B2 (ja) 2007-07-13 2011-11-30 日本碍子株式会社 非極性面ｉｉｉ族窒化物単結晶の製造方法
JP4707755B2 (ja) 2009-07-16 2011-06-22 株式会社トクヤマ 窒化アルミニウム単結晶層を有する積層体の製造方法、該製法で製造される積層体、該積層体を用いた窒化アルミニウム単結晶基板の製造方法、および、窒化アルミニウム単結晶基板
JP2015040136A (ja) 2013-08-20 2015-03-02 住友電気工業株式会社 Ｉｉｉ族窒化物膜の製造方法およびｉｉｉ族窒化物半導体デバイスの製造方法

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