JPWO2021100747A1 - - Google Patents

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Publication number
JPWO2021100747A1
JPWO2021100747A1 JP2021558417A JP2021558417A JPWO2021100747A1 JP WO2021100747 A1 JPWO2021100747 A1 JP WO2021100747A1 JP 2021558417 A JP2021558417 A JP 2021558417A JP 2021558417 A JP2021558417 A JP 2021558417A JP WO2021100747 A1 JPWO2021100747 A1 JP WO2021100747A1
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Japan
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JP2021558417A
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JPWO2021100747A5 (ja
JP7170908B2 (ja
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    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00Details of semiconductor or other solid state devices
    • H01L23/02Containers; Seals
    • H01L23/04Containers; Seals characterised by the shape of the container or parts, e.g. caps, walls
    • H01L23/053Containers; Seals characterised by the shape of the container or parts, e.g. caps, walls the container being a hollow construction and having an insulating or insulated base as a mounting for the semiconductor body
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    • H01L23/00Details of semiconductor or other solid state devices
    • H01L23/28Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
    • H01L23/31Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape
    • H01L23/3107Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape the device being completely enclosed
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    • H01L23/18Fillings characterised by the material, its physical or chemical properties, or its arrangement within the complete device
    • H01L23/24Fillings characterised by the material, its physical or chemical properties, or its arrangement within the complete device solid or gel at the normal operating temperature of the device
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JP2021558417A 2019-11-20 2020-11-18 電力用半導体装置およびその製造方法、ならびに電力変換装置 Active JP7170908B2 (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2019209605 2019-11-20
JP2019209605 2019-11-20
PCT/JP2020/042948 WO2021100747A1 (ja) 2019-11-20 2020-11-18 電力用半導体装置およびその製造方法、ならびに電力変換装置

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JPWO2021100747A1 true JPWO2021100747A1 (ja) 2021-05-27
JPWO2021100747A5 JPWO2021100747A5 (ja) 2022-06-29
JP7170908B2 JP7170908B2 (ja) 2022-11-14

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US (1) US20220415738A1 (ja)
JP (1) JP7170908B2 (ja)
CN (1) CN114730758A (ja)
WO (1) WO2021100747A1 (ja)

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GB2576524B (en) * 2018-08-22 2022-08-03 Pragmatic Printing Ltd Profiled Thermode

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2013146212A1 (ja) * 2012-03-28 2013-10-03 富士電機株式会社 半導体装置及び半導体装置の製造方法
WO2014185050A1 (ja) * 2013-05-16 2014-11-20 富士電機株式会社 半導体装置
JP2017199809A (ja) * 2016-04-27 2017-11-02 三菱電機株式会社 電力用半導体装置
JP2019087700A (ja) * 2017-11-10 2019-06-06 三菱電機株式会社 電力用半導体装置、電力用半導体装置の製造方法および電力変換装置
JP2019153607A (ja) * 2018-02-28 2019-09-12 三菱電機株式会社 電力用半導体装置およびその製造方法、ならびに電力変換装置

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2013146212A1 (ja) * 2012-03-28 2013-10-03 富士電機株式会社 半導体装置及び半導体装置の製造方法
WO2014185050A1 (ja) * 2013-05-16 2014-11-20 富士電機株式会社 半導体装置
JP2017199809A (ja) * 2016-04-27 2017-11-02 三菱電機株式会社 電力用半導体装置
JP2019087700A (ja) * 2017-11-10 2019-06-06 三菱電機株式会社 電力用半導体装置、電力用半導体装置の製造方法および電力変換装置
JP2019153607A (ja) * 2018-02-28 2019-09-12 三菱電機株式会社 電力用半導体装置およびその製造方法、ならびに電力変換装置

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