JPWO2021099880A1 - - Google Patents

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Publication number
JPWO2021099880A1
JPWO2021099880A1 JP2021558029A JP2021558029A JPWO2021099880A1 JP WO2021099880 A1 JPWO2021099880 A1 JP WO2021099880A1 JP 2021558029 A JP2021558029 A JP 2021558029A JP 2021558029 A JP2021558029 A JP 2021558029A JP WO2021099880 A1 JPWO2021099880 A1 JP WO2021099880A1
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JP
Japan
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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Application number
JP2021558029A
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Japanese (ja)
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JP7609800B2 (ja
JPWO2021099880A5 (https=
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Publication of JPWO2021099880A1 publication Critical patent/JPWO2021099880A1/ja
Publication of JPWO2021099880A5 publication Critical patent/JPWO2021099880A5/ja
Priority to JP2024223735A priority Critical patent/JP7820076B2/ja
Application granted granted Critical
Publication of JP7609800B2 publication Critical patent/JP7609800B2/ja
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Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/85—Packages
    • H10H20/857—Interconnections, e.g. lead-frames, bond wires or solder balls
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B5/00—Optical elements other than lenses
    • G02B5/20—Filters
    • G—PHYSICS
    • G06—COMPUTING OR CALCULATING; COUNTING
    • G06F—ELECTRIC DIGITAL DATA PROCESSING
    • G06F3/00—Input arrangements for transferring data to be processed into a form capable of being handled by the computer; Output arrangements for transferring data from processing unit to output unit, e.g. interface arrangements
    • G06F3/01—Input arrangements or combined input and output arrangements for interaction between user and computer
    • G06F3/03—Arrangements for converting the position or the displacement of a member into a coded form
    • G06F3/041—Digitisers, e.g. for touch screens or touch pads, characterised by the transducing means
    • G06F3/044—Digitisers, e.g. for touch screens or touch pads, characterised by the transducing means by capacitive means
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/01—Manufacture or treatment
    • H10H20/011—Manufacture or treatment of bodies, e.g. forming semiconductor layers
    • H10H20/013—Manufacture or treatment of bodies, e.g. forming semiconductor layers having light-emitting regions comprising only Group III-V materials
    • H10H20/0133—Manufacture or treatment of bodies, e.g. forming semiconductor layers having light-emitting regions comprising only Group III-V materials with a substrate not being Group III-V materials
    • H10H20/01335—Manufacture or treatment of bodies, e.g. forming semiconductor layers having light-emitting regions comprising only Group III-V materials with a substrate not being Group III-V materials the light-emitting regions comprising nitride materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/822—Materials of the light-emitting regions
    • H10H20/824—Materials of the light-emitting regions comprising only Group III-V materials, e.g. GaP
    • H10H20/825—Materials of the light-emitting regions comprising only Group III-V materials, e.g. GaP containing nitrogen, e.g. GaN
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/83—Electrodes
    • H10H20/831—Electrodes characterised by their shape
    • H10H20/8312—Electrodes characterised by their shape extending at least partially through the bodies
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/85—Packages
    • H10H20/851—Wavelength conversion means
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/85—Packages
    • H10H20/855—Optical field-shaping means, e.g. lenses
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H29/00—Integrated devices, or assemblies of multiple devices, comprising at least one light-emitting semiconductor element covered by group H10H20/00
    • H10H29/10—Integrated devices comprising at least one light-emitting semiconductor component covered by group H10H20/00
    • H10H29/14—Integrated devices comprising at least one light-emitting semiconductor component covered by group H10H20/00 comprising multiple light-emitting semiconductor components
    • H10H29/142—Two-dimensional arrangements, e.g. asymmetric LED layout
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W90/00—Package configurations
    • G—PHYSICS
    • G06—COMPUTING OR CALCULATING; COUNTING
    • G06F—ELECTRIC DIGITAL DATA PROCESSING
    • G06F2203/00—Indexing scheme relating to G06F3/00 - G06F3/048
    • G06F2203/041—Indexing scheme relating to G06F3/041 - G06F3/045
    • G06F2203/04103—Manufacturing, i.e. details related to manufacturing processes specially suited for touch sensitive devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/01—Manufacture or treatment
    • H10H20/032—Manufacture or treatment of electrodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/01—Manufacture or treatment
    • H10H20/036—Manufacture or treatment of packages
    • H10H20/0361—Manufacture or treatment of packages of wavelength conversion means
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/01—Manufacture or treatment
    • H10H20/036—Manufacture or treatment of packages
    • H10H20/0363—Manufacture or treatment of packages of optical field-shaping means
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/01—Manufacture or treatment
    • H10H20/036—Manufacture or treatment of packages
    • H10H20/0364—Manufacture or treatment of packages of interconnections

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Theoretical Computer Science (AREA)
  • General Engineering & Computer Science (AREA)
  • Optics & Photonics (AREA)
  • Human Computer Interaction (AREA)
  • Devices For Indicating Variable Information By Combining Individual Elements (AREA)
  • Electroluminescent Light Sources (AREA)
  • Led Device Packages (AREA)
  • Thin Film Transistor (AREA)
JP2021558029A 2019-11-21 2020-11-09 表示装置の作製方法 Active JP7609800B2 (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2024223735A JP7820076B2 (ja) 2019-11-21 2024-12-19 表示装置

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2019210638 2019-11-21
JP2019210638 2019-11-21
PCT/IB2020/060504 WO2021099880A1 (ja) 2019-11-21 2020-11-09 表示装置、表示モジュール、電子機器、及び表示装置の作製方法

Related Child Applications (1)

Application Number Title Priority Date Filing Date
JP2024223735A Division JP7820076B2 (ja) 2019-11-21 2024-12-19 表示装置

Publications (3)

Publication Number Publication Date
JPWO2021099880A1 true JPWO2021099880A1 (https=) 2021-05-27
JPWO2021099880A5 JPWO2021099880A5 (https=) 2023-11-14
JP7609800B2 JP7609800B2 (ja) 2025-01-07

Family

ID=75980554

Family Applications (2)

Application Number Title Priority Date Filing Date
JP2021558029A Active JP7609800B2 (ja) 2019-11-21 2020-11-09 表示装置の作製方法
JP2024223735A Active JP7820076B2 (ja) 2019-11-21 2024-12-19 表示装置

Family Applications After (1)

Application Number Title Priority Date Filing Date
JP2024223735A Active JP7820076B2 (ja) 2019-11-21 2024-12-19 表示装置

Country Status (5)

Country Link
US (2) US12356779B2 (https=)
JP (2) JP7609800B2 (https=)
KR (1) KR20220104165A (https=)
CN (1) CN114641816A (https=)
WO (1) WO2021099880A1 (https=)

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN115442991A (zh) * 2021-06-04 2022-12-06 群创光电股份有限公司 电子装置
US20220399479A1 (en) * 2021-06-11 2022-12-15 Applied Materials, Inc. High pixel density structures and methods of making
KR102752046B1 (ko) * 2021-10-22 2025-01-09 삼성전자주식회사 발광 소자 및 이를 포함하는 디스플레이 장치
CN115083278B (zh) * 2022-06-24 2024-07-16 维沃移动通信有限公司 显示组件和电子设备
US20240021593A1 (en) * 2022-07-12 2024-01-18 United Microelectronics Corp. Light-emitting diode structure and method of manufacturing the same

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2012227514A (ja) * 2011-04-08 2012-11-15 Sony Corp 画素チップ、表示パネル、照明パネル、表示装置および照明装置
JP2016174143A (ja) * 2015-01-26 2016-09-29 株式会社半導体エネルギー研究所 半導体装置およびその製造方法
JP2019185000A (ja) * 2017-09-15 2019-10-24 株式会社半導体エネルギー研究所 表示装置および電子機器

Family Cites Families (30)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI467541B (zh) * 2004-09-16 2015-01-01 半導體能源研究所股份有限公司 顯示裝置和其驅動方法
KR20260036405A (ko) 2009-10-29 2026-03-16 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치
KR20230098374A (ko) 2011-10-18 2023-07-03 가부시키가이샤 한도오따이 에네루기 켄큐쇼 발광 장치
DE102011056888A1 (de) 2011-12-22 2013-06-27 Osram Opto Semiconductors Gmbh Anzeigevorrichtung und Verfahren zur Herstellung einer Anzeigevorrichtung
KR20240067959A (ko) 2013-04-15 2024-05-17 가부시키가이샤 한도오따이 에네루기 켄큐쇼 발광 장치
US8987765B2 (en) 2013-06-17 2015-03-24 LuxVue Technology Corporation Reflective bank structure and method for integrating a light emitting device
KR102788207B1 (ko) 2015-04-13 2025-03-31 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치
TWI665800B (zh) 2015-06-16 2019-07-11 Au Optronics Corporation 發光二極體顯示器及其製造方法
KR102456552B1 (ko) * 2016-01-11 2022-10-19 쑤저우 레킨 세미컨덕터 컴퍼니 리미티드 박막 트랜지스터 기판, 이를 포함하는 표시패널 및 표시장치
US10083668B2 (en) * 2016-03-09 2018-09-25 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device, display device, and electronic device
US9998119B2 (en) 2016-05-20 2018-06-12 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device, electronic component, and electronic device
KR102617466B1 (ko) 2016-07-18 2023-12-26 주식회사 루멘스 마이크로 led 어레이 디스플레이 장치
TW201824220A (zh) 2016-09-30 2018-07-01 半導體能源硏究所股份有限公司 顯示面板、顯示裝置、輸入輸出裝置、資料處理裝置
US10319743B2 (en) * 2016-12-16 2019-06-11 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device, display system, and electronic device
TWI798308B (zh) 2017-12-25 2023-04-11 日商半導體能源研究所股份有限公司 顯示器及包括該顯示器的電子裝置
US20190326329A1 (en) 2018-04-19 2019-10-24 Innolux Corporation Electronic device
CN115732516A (zh) 2018-04-19 2023-03-03 群创光电股份有限公司 电子装置
WO2019215537A1 (ja) 2018-05-11 2019-11-14 株式会社半導体エネルギー研究所 表示パネル、表示装置、入出力装置、情報処理装置
US12087741B2 (en) 2018-05-17 2024-09-10 Semiconductor Energy Laboratory Co., Ltd. Display device
JPWO2019220265A1 (ja) 2018-05-17 2021-07-08 株式会社半導体エネルギー研究所 表示パネル、表示装置、入出力装置、情報処理装置
KR102869225B1 (ko) 2018-05-18 2025-10-13 가부시키가이샤 한도오따이 에네루기 켄큐쇼 표시 장치 및 표시 장치의 구동 방법
JP7289294B2 (ja) 2018-05-18 2023-06-09 株式会社半導体エネルギー研究所 表示装置、表示モジュール、電子機器、及び、表示装置の作製方法
CN112639937B (zh) 2018-09-05 2023-06-23 株式会社半导体能源研究所 显示装置、显示模块、电子设备及显示装置的制造方法
JP7313358B2 (ja) 2018-09-07 2023-07-24 株式会社半導体エネルギー研究所 表示装置、表示モジュール、及び電子機器
WO2020065472A1 (ja) 2018-09-28 2020-04-02 株式会社半導体エネルギー研究所 表示装置の作製方法、表示装置の作製装置
CN109300931B (zh) 2018-09-30 2021-02-26 上海天马微电子有限公司 一种Micro LED显示面板及制作方法、显示装置
US11710760B2 (en) 2019-06-21 2023-07-25 Semiconductor Energy Laboratory Co., Ltd. Display device, display module, electronic device, and manufacturing method of display device
US20220367775A1 (en) 2019-11-12 2022-11-17 Semiconductor Energy Laboratory Co., Ltd. Display unit, display module, electronic device, and method for manufacturing the display unit
JP7641724B2 (ja) 2019-11-12 2025-03-07 株式会社半導体エネルギー研究所 機能パネル、表示装置、入出力装置、情報処理装置
US11610877B2 (en) 2019-11-21 2023-03-21 Semiconductor Energy Laboratory Co., Ltd. Functional panel, display device, input/output device, and data processing device

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2012227514A (ja) * 2011-04-08 2012-11-15 Sony Corp 画素チップ、表示パネル、照明パネル、表示装置および照明装置
JP2016174143A (ja) * 2015-01-26 2016-09-29 株式会社半導体エネルギー研究所 半導体装置およびその製造方法
JP2019185000A (ja) * 2017-09-15 2019-10-24 株式会社半導体エネルギー研究所 表示装置および電子機器

Also Published As

Publication number Publication date
JP7609800B2 (ja) 2025-01-07
US20250301835A1 (en) 2025-09-25
US20220406981A1 (en) 2022-12-22
CN114641816A (zh) 2022-06-17
JP7820076B2 (ja) 2026-02-25
JP2025031798A (ja) 2025-03-07
US12356779B2 (en) 2025-07-08
US12593554B2 (en) 2026-03-31
KR20220104165A (ko) 2022-07-26
WO2021099880A1 (ja) 2021-05-27

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