JPWO2021090775A1 - - Google Patents

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Publication number
JPWO2021090775A1
JPWO2021090775A1 JP2021554923A JP2021554923A JPWO2021090775A1 JP WO2021090775 A1 JPWO2021090775 A1 JP WO2021090775A1 JP 2021554923 A JP2021554923 A JP 2021554923A JP 2021554923 A JP2021554923 A JP 2021554923A JP WO2021090775 A1 JPWO2021090775 A1 JP WO2021090775A1
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JP
Japan
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JP2021554923A
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JP7392734B2 (ja
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Publication of JPWO2021090775A1 publication Critical patent/JPWO2021090775A1/ja
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Publication of JP7392734B2 publication Critical patent/JP7392734B2/ja
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Classifications

    • HELECTRICITY
    • H03ELECTRONIC CIRCUITRY
    • H03HIMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H9/00Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
    • H03H9/25Constructional features of resonators using surface acoustic waves
    • HELECTRICITY
    • H03ELECTRONIC CIRCUITRY
    • H03HIMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H9/00Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
    • H03H9/02Details
    • H03H9/02535Details of surface acoustic wave devices
    • H03H9/02543Characteristics of substrate, e.g. cutting angles
    • H03H9/02559Characteristics of substrate, e.g. cutting angles of lithium niobate or lithium-tantalate substrates
    • HELECTRICITY
    • H03ELECTRONIC CIRCUITRY
    • H03HIMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H9/00Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
    • H03H9/02Details
    • H03H9/02535Details of surface acoustic wave devices
    • H03H9/02543Characteristics of substrate, e.g. cutting angles
    • H03H9/02566Characteristics of substrate, e.g. cutting angles of semiconductor substrates
    • HELECTRICITY
    • H03ELECTRONIC CIRCUITRY
    • H03HIMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H9/00Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
    • H03H9/02Details
    • H03H9/02535Details of surface acoustic wave devices
    • H03H9/02543Characteristics of substrate, e.g. cutting angles
    • H03H9/02574Characteristics of substrate, e.g. cutting angles of combined substrates, multilayered substrates, piezoelectrical layers on not-piezoelectrical substrate

Landscapes

  • Physics & Mathematics (AREA)
  • Acoustics & Sound (AREA)
  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Surface Acoustic Wave Elements And Circuit Networks Thereof (AREA)
JP2021554923A 2019-11-06 2020-10-30 弾性波装置 Active JP7392734B2 (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2019201523 2019-11-06
JP2019201523 2019-11-06
PCT/JP2020/040894 WO2021090775A1 (ja) 2019-11-06 2020-10-30 弾性波装置

Publications (2)

Publication Number Publication Date
JPWO2021090775A1 true JPWO2021090775A1 (ja) 2021-05-14
JP7392734B2 JP7392734B2 (ja) 2023-12-06

Family

ID=75848868

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2021554923A Active JP7392734B2 (ja) 2019-11-06 2020-10-30 弾性波装置

Country Status (4)

Country Link
US (1) US20220263493A1 (ja)
JP (1) JP7392734B2 (ja)
CN (1) CN114641933A (ja)
WO (1) WO2021090775A1 (ja)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN117013984B (zh) * 2023-08-21 2024-05-28 天通瑞宏科技有限公司 一种键合晶圆及薄膜声表面波器件

Citations (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH05183377A (ja) * 1992-01-06 1993-07-23 Toshiba Corp 表面弾性波素子
JPH08310900A (ja) * 1995-05-10 1996-11-26 Sumitomo Electric Ind Ltd 窒化物薄膜単結晶及びその製造方法
JP2006524016A (ja) * 2003-03-03 2006-10-19 クリー インコーポレイテッド 窒化物ベースの集積音波デバイスおよび窒化物ベースの集積音波デバイスを製造する方法
WO2013172251A1 (ja) * 2012-05-17 2013-11-21 株式会社村田製作所 弾性表面波装置
JP2015115870A (ja) * 2013-12-13 2015-06-22 株式会社村田製作所 弾性波デバイス
JP2017026906A (ja) * 2015-07-24 2017-02-02 日本碍子株式会社 複合基板およびその製造方法
WO2018088093A1 (ja) * 2016-11-11 2018-05-17 信越化学工業株式会社 複合基板、表面弾性波デバイスおよび複合基板の製造方法
WO2019082806A1 (ja) * 2017-10-23 2019-05-02 京セラ株式会社 弾性波素子
WO2019138812A1 (ja) * 2018-01-12 2019-07-18 株式会社村田製作所 弾性波装置、マルチプレクサ、高周波フロントエンド回路、及び通信装置

Patent Citations (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH05183377A (ja) * 1992-01-06 1993-07-23 Toshiba Corp 表面弾性波素子
JPH08310900A (ja) * 1995-05-10 1996-11-26 Sumitomo Electric Ind Ltd 窒化物薄膜単結晶及びその製造方法
JP2006524016A (ja) * 2003-03-03 2006-10-19 クリー インコーポレイテッド 窒化物ベースの集積音波デバイスおよび窒化物ベースの集積音波デバイスを製造する方法
WO2013172251A1 (ja) * 2012-05-17 2013-11-21 株式会社村田製作所 弾性表面波装置
JP2015115870A (ja) * 2013-12-13 2015-06-22 株式会社村田製作所 弾性波デバイス
JP2017026906A (ja) * 2015-07-24 2017-02-02 日本碍子株式会社 複合基板およびその製造方法
WO2018088093A1 (ja) * 2016-11-11 2018-05-17 信越化学工業株式会社 複合基板、表面弾性波デバイスおよび複合基板の製造方法
WO2019082806A1 (ja) * 2017-10-23 2019-05-02 京セラ株式会社 弾性波素子
WO2019138812A1 (ja) * 2018-01-12 2019-07-18 株式会社村田製作所 弾性波装置、マルチプレクサ、高周波フロントエンド回路、及び通信装置

Also Published As

Publication number Publication date
JP7392734B2 (ja) 2023-12-06
CN114641933A (zh) 2022-06-17
WO2021090775A1 (ja) 2021-05-14
US20220263493A1 (en) 2022-08-18

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