JPWO2021075170A1 - - Google Patents

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Publication number
JPWO2021075170A1
JPWO2021075170A1 JP2021552266A JP2021552266A JPWO2021075170A1 JP WO2021075170 A1 JPWO2021075170 A1 JP WO2021075170A1 JP 2021552266 A JP2021552266 A JP 2021552266A JP 2021552266 A JP2021552266 A JP 2021552266A JP WO2021075170 A1 JPWO2021075170 A1 JP WO2021075170A1
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JP
Japan
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Application number
JP2021552266A
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JP7410164B2 (ja
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Priority to JP2023186099A priority Critical patent/JP2024012432A/ja
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Publication of JP7410164B2 publication Critical patent/JP7410164B2/ja
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Classifications

    • G—PHYSICS
    • G06—COMPUTING; CALCULATING OR COUNTING
    • G06T—IMAGE DATA PROCESSING OR GENERATION, IN GENERAL
    • G06T7/00—Image analysis
    • G06T7/0002—Inspection of images, e.g. flaw detection
    • G06T7/0004—Industrial image inspection
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N23/00—Investigating or analysing materials by the use of wave or particle radiation, e.g. X-rays or neutrons, not covered by groups G01N3/00 – G01N17/00, G01N21/00 or G01N22/00
    • G01N23/22—Investigating or analysing materials by the use of wave or particle radiation, e.g. X-rays or neutrons, not covered by groups G01N3/00 – G01N17/00, G01N21/00 or G01N22/00 by measuring secondary emission from the material
    • G01N23/223—Investigating or analysing materials by the use of wave or particle radiation, e.g. X-rays or neutrons, not covered by groups G01N3/00 – G01N17/00, G01N21/00 or G01N22/00 by measuring secondary emission from the material by irradiating the sample with X-rays or gamma-rays and by measuring X-ray fluorescence
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N23/00—Investigating or analysing materials by the use of wave or particle radiation, e.g. X-rays or neutrons, not covered by groups G01N3/00 – G01N17/00, G01N21/00 or G01N22/00
    • G01N23/22—Investigating or analysing materials by the use of wave or particle radiation, e.g. X-rays or neutrons, not covered by groups G01N3/00 – G01N17/00, G01N21/00 or G01N22/00 by measuring secondary emission from the material
    • G01N23/225—Investigating or analysing materials by the use of wave or particle radiation, e.g. X-rays or neutrons, not covered by groups G01N3/00 – G01N17/00, G01N21/00 or G01N22/00 by measuring secondary emission from the material using electron or ion
    • G01N23/2251—Investigating or analysing materials by the use of wave or particle radiation, e.g. X-rays or neutrons, not covered by groups G01N3/00 – G01N17/00, G01N21/00 or G01N22/00 by measuring secondary emission from the material using electron or ion using incident electron beams, e.g. scanning electron microscopy [SEM]
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N23/00—Investigating or analysing materials by the use of wave or particle radiation, e.g. X-rays or neutrons, not covered by groups G01N3/00 – G01N17/00, G01N21/00 or G01N22/00
    • G01N23/22—Investigating or analysing materials by the use of wave or particle radiation, e.g. X-rays or neutrons, not covered by groups G01N3/00 – G01N17/00, G01N21/00 or G01N22/00 by measuring secondary emission from the material
    • G01N23/225—Investigating or analysing materials by the use of wave or particle radiation, e.g. X-rays or neutrons, not covered by groups G01N3/00 – G01N17/00, G01N21/00 or G01N22/00 by measuring secondary emission from the material using electron or ion
    • G01N23/2251—Investigating or analysing materials by the use of wave or particle radiation, e.g. X-rays or neutrons, not covered by groups G01N3/00 – G01N17/00, G01N21/00 or G01N22/00 by measuring secondary emission from the material using electron or ion using incident electron beams, e.g. scanning electron microscopy [SEM]
    • G01N23/2252—Measuring emitted X-rays, e.g. electron probe microanalysis [EPMA]
    • G—PHYSICS
    • G06—COMPUTING; CALCULATING OR COUNTING
    • G06N—COMPUTING ARRANGEMENTS BASED ON SPECIFIC COMPUTATIONAL MODELS
    • G06N3/00—Computing arrangements based on biological models
    • G06N3/02—Neural networks
    • G06N3/08—Learning methods
    • G—PHYSICS
    • G06—COMPUTING; CALCULATING OR COUNTING
    • G06T—IMAGE DATA PROCESSING OR GENERATION, IN GENERAL
    • G06T7/00—Image analysis
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/26—Electron or ion microscopes; Electron or ion diffraction tubes
    • H01J37/28—Electron or ion microscopes; Electron or ion diffraction tubes with scanning beams
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
    • H01L22/10—Measuring as part of the manufacturing process
    • H01L22/12—Measuring as part of the manufacturing process for structural parameters, e.g. thickness, line width, refractive index, temperature, warp, bond strength, defects, optical inspection, electrical measurement of structural dimensions, metallurgic measurement of diffusions
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N2223/00—Investigating materials by wave or particle radiation
    • G01N2223/07—Investigating materials by wave or particle radiation secondary emission
    • G01N2223/079—Investigating materials by wave or particle radiation secondary emission incident electron beam and measuring excited X-rays
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N2223/00—Investigating materials by wave or particle radiation
    • G01N2223/40—Imaging
    • G01N2223/401—Imaging image processing
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N2223/00—Investigating materials by wave or particle radiation
    • G01N2223/60—Specific applications or type of materials
    • G01N2223/611—Specific applications or type of materials patterned objects; electronic devices
    • G01N2223/6116—Specific applications or type of materials patterned objects; electronic devices semiconductor wafer
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N2223/00—Investigating materials by wave or particle radiation
    • G01N2223/60—Specific applications or type of materials
    • G01N2223/646—Specific applications or type of materials flaws, defects
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N2223/00—Investigating materials by wave or particle radiation
    • G01N2223/60—Specific applications or type of materials
    • G01N2223/652—Specific applications or type of materials impurities, foreign matter, trace amounts
    • G—PHYSICS
    • G06—COMPUTING; CALCULATING OR COUNTING
    • G06T—IMAGE DATA PROCESSING OR GENERATION, IN GENERAL
    • G06T2207/00—Indexing scheme for image analysis or image enhancement
    • G06T2207/10—Image acquisition modality
    • G06T2207/10056—Microscopic image
    • G06T2207/10061—Microscopic image from scanning electron microscope
    • G—PHYSICS
    • G06—COMPUTING; CALCULATING OR COUNTING
    • G06T—IMAGE DATA PROCESSING OR GENERATION, IN GENERAL
    • G06T2207/00—Indexing scheme for image analysis or image enhancement
    • G06T2207/10—Image acquisition modality
    • G06T2207/10116—X-ray image
    • G—PHYSICS
    • G06—COMPUTING; CALCULATING OR COUNTING
    • G06T—IMAGE DATA PROCESSING OR GENERATION, IN GENERAL
    • G06T2207/00—Indexing scheme for image analysis or image enhancement
    • G06T2207/20—Special algorithmic details
    • G06T2207/20081—Training; Learning
    • G—PHYSICS
    • G06—COMPUTING; CALCULATING OR COUNTING
    • G06T—IMAGE DATA PROCESSING OR GENERATION, IN GENERAL
    • G06T2207/00—Indexing scheme for image analysis or image enhancement
    • G06T2207/30—Subject of image; Context of image processing
    • G06T2207/30108—Industrial image inspection
    • G06T2207/30148—Semiconductor; IC; Wafer

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Health & Medical Sciences (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • General Health & Medical Sciences (AREA)
  • Biochemistry (AREA)
  • Immunology (AREA)
  • Pathology (AREA)
  • Theoretical Computer Science (AREA)
  • Computer Vision & Pattern Recognition (AREA)
  • Quality & Reliability (AREA)
  • Manufacturing & Machinery (AREA)
  • Biophysics (AREA)
  • Software Systems (AREA)
  • Computational Linguistics (AREA)
  • Data Mining & Analysis (AREA)
  • Evolutionary Computation (AREA)
  • Molecular Biology (AREA)
  • Computing Systems (AREA)
  • General Engineering & Computer Science (AREA)
  • Mathematical Physics (AREA)
  • Biomedical Technology (AREA)
  • Artificial Intelligence (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Analysing Materials By The Use Of Radiation (AREA)
  • Testing Or Measuring Of Semiconductors Or The Like (AREA)
  • Eye Examination Apparatus (AREA)
  • Investigating Materials By The Use Of Optical Means Adapted For Particular Applications (AREA)
  • Inspection Of Paper Currency And Valuable Securities (AREA)
JP2021552266A 2019-10-18 2020-09-04 検査システム、及び非一時的コンピュータ可読媒体 Active JP7410164B2 (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2023186099A JP2024012432A (ja) 2019-10-18 2023-10-31 検査システム、及び非一時的コンピュータ可読媒体

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2019190910 2019-10-18
JP2019190910 2019-10-18
PCT/JP2020/033626 WO2021075170A1 (ja) 2019-10-18 2020-09-04 検査システム、及び非一時的コンピュータ可読媒体

Related Child Applications (1)

Application Number Title Priority Date Filing Date
JP2023186099A Division JP2024012432A (ja) 2019-10-18 2023-10-31 検査システム、及び非一時的コンピュータ可読媒体

Publications (2)

Publication Number Publication Date
JPWO2021075170A1 true JPWO2021075170A1 (ja) 2021-04-22
JP7410164B2 JP7410164B2 (ja) 2024-01-09

Family

ID=75537823

Family Applications (2)

Application Number Title Priority Date Filing Date
JP2021552266A Active JP7410164B2 (ja) 2019-10-18 2020-09-04 検査システム、及び非一時的コンピュータ可読媒体
JP2023186099A Pending JP2024012432A (ja) 2019-10-18 2023-10-31 検査システム、及び非一時的コンピュータ可読媒体

Family Applications After (1)

Application Number Title Priority Date Filing Date
JP2023186099A Pending JP2024012432A (ja) 2019-10-18 2023-10-31 検査システム、及び非一時的コンピュータ可読媒体

Country Status (6)

Country Link
US (1) US20240127417A1 (ja)
JP (2) JP7410164B2 (ja)
KR (1) KR20220062635A (ja)
CN (1) CN114556416A (ja)
TW (1) TWI780490B (ja)
WO (1) WO2021075170A1 (ja)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP7565887B2 (ja) * 2021-07-29 2024-10-11 株式会社日立ハイテク 荷電粒子線装置の撮像画像に係る条件決定方法、装置およびプログラム
US20230238290A1 (en) 2022-01-27 2023-07-27 Hitachi High-Tech Corporation Defect observation method, apparatus, and program

Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2001343336A (ja) * 2000-05-31 2001-12-14 Nidek Co Ltd 欠陥検査方法及び欠陥検査装置
JP2004191187A (ja) * 2002-12-11 2004-07-08 Hitachi Ltd 欠陥組成分析方法及び装置
JP2015036719A (ja) * 2013-08-12 2015-02-23 株式会社ホロン 超高速レビュー装置および超高速レビュー方法
JP2018048951A (ja) * 2016-09-23 2018-03-29 東邦チタニウム株式会社 嫌気性・禁水性粒子内部の分析方法
JP2019109563A (ja) * 2017-12-15 2019-07-04 オムロン株式会社 データ生成装置、データ生成方法及びデータ生成プログラム
US20190304826A1 (en) * 2018-03-30 2019-10-03 Taiwan Semiconductor Manufacturing Co., Ltd. Systems and methods for orientator based wafer defect sensing

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DE2529695B1 (de) 1975-07-03 1976-01-29 Uni Cardan Ag Gleichlaufdrehgelenk
JPH08201317A (ja) * 1995-01-31 1996-08-09 Kawasaki Steel Corp 試料中の元素分布測定と組成分析方法およびその装置
US6941288B2 (en) * 2002-04-08 2005-09-06 Shih-Jong J. Lee Online learning method in a decision system
JP2009063493A (ja) * 2007-09-07 2009-03-26 Tokyo Seimitsu Co Ltd 材料分析装置及び材料分析方法
US7919760B2 (en) * 2008-12-09 2011-04-05 Hermes-Microvision, Inc. Operation stage for wafer edge inspection and review
JP2014067863A (ja) * 2012-09-26 2014-04-17 Tokyo Electron Ltd 基板のベベル部の検査方法及び記録媒体
JP5608208B2 (ja) * 2012-11-28 2014-10-15 株式会社日立ハイテクノロジーズ 欠陥レビュー装置
US9696268B2 (en) * 2014-10-27 2017-07-04 Kla-Tencor Corporation Automated decision-based energy-dispersive x-ray methodology and apparatus
TWI837773B (zh) * 2017-06-28 2024-04-01 日商東京威力科創股份有限公司 熱處理裝置之狀態監視裝置、熱處理裝置之管理方法及記錄媒體
JP2019023587A (ja) * 2017-07-24 2019-02-14 住友化学株式会社 欠陥検査システム及び欠陥検査方法
KR102592253B1 (ko) * 2019-02-15 2023-10-24 주식회사 히타치하이테크 구조 추정 시스템, 구조 추정 프로그램
US20240118508A1 (en) * 2022-10-07 2024-04-11 Kyocera Sld Laser, Inc. Micro led array for optical communication

Patent Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2001343336A (ja) * 2000-05-31 2001-12-14 Nidek Co Ltd 欠陥検査方法及び欠陥検査装置
JP2004191187A (ja) * 2002-12-11 2004-07-08 Hitachi Ltd 欠陥組成分析方法及び装置
JP2015036719A (ja) * 2013-08-12 2015-02-23 株式会社ホロン 超高速レビュー装置および超高速レビュー方法
JP2018048951A (ja) * 2016-09-23 2018-03-29 東邦チタニウム株式会社 嫌気性・禁水性粒子内部の分析方法
JP2019109563A (ja) * 2017-12-15 2019-07-04 オムロン株式会社 データ生成装置、データ生成方法及びデータ生成プログラム
US20190304826A1 (en) * 2018-03-30 2019-10-03 Taiwan Semiconductor Manufacturing Co., Ltd. Systems and methods for orientator based wafer defect sensing

Also Published As

Publication number Publication date
JP2024012432A (ja) 2024-01-30
KR20220062635A (ko) 2022-05-17
JP7410164B2 (ja) 2024-01-09
US20240127417A1 (en) 2024-04-18
WO2021075170A1 (ja) 2021-04-22
CN114556416A (zh) 2022-05-27
TW202117315A (zh) 2021-05-01
TWI780490B (zh) 2022-10-11

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