JPWO2021065587A1 - - Google Patents

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Publication number
JPWO2021065587A1
JPWO2021065587A1 JP2021550636A JP2021550636A JPWO2021065587A1 JP WO2021065587 A1 JPWO2021065587 A1 JP WO2021065587A1 JP 2021550636 A JP2021550636 A JP 2021550636A JP 2021550636 A JP2021550636 A JP 2021550636A JP WO2021065587 A1 JPWO2021065587 A1 JP WO2021065587A1
Authority
JP
Japan
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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Application number
JP2021550636A
Other languages
Japanese (ja)
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JP7570013B2 (ja
JPWO2021065587A5 (https=
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Publication of JPWO2021065587A1 publication Critical patent/JPWO2021065587A1/ja
Publication of JPWO2021065587A5 publication Critical patent/JPWO2021065587A5/ja
Application granted granted Critical
Publication of JP7570013B2 publication Critical patent/JP7570013B2/ja
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Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/803—Pixels having integrated switching, control, storage or amplification elements
    • H10F39/8037—Pixels having integrated switching, control, storage or amplification elements the integrated elements comprising a transistor
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/70—SSIS architectures; Circuits associated therewith
    • H04N25/76—Addressed sensors, e.g. MOS or CMOS sensors
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/70—SSIS architectures; Circuits associated therewith
    • H04N25/76—Addressed sensors, e.g. MOS or CMOS sensors
    • H04N25/78—Readout circuits for addressed sensors, e.g. output amplifiers or A/D converters
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/10—Integrated devices
    • H10F39/12—Image sensors
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/60—Noise processing, e.g. detecting, correcting, reducing or removing noise
    • H04N25/65—Noise processing, e.g. detecting, correcting, reducing or removing noise applied to reset noise, e.g. KTC noise related to CMOS structures by techniques other than CDS
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/70—SSIS architectures; Circuits associated therewith
    • H04N25/71—Charge-coupled device [CCD] sensors; Charge-transfer registers specially adapted for CCD sensors
    • H04N25/745—Circuitry for generating timing or clock signals
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/70—SSIS architectures; Circuits associated therewith
    • H04N25/71—Charge-coupled device [CCD] sensors; Charge-transfer registers specially adapted for CCD sensors
    • H04N25/75—Circuitry for providing, modifying or processing image signals from the pixel array

Landscapes

  • Engineering & Computer Science (AREA)
  • Multimedia (AREA)
  • Signal Processing (AREA)
  • Solid State Image Pick-Up Elements (AREA)
  • Transforming Light Signals Into Electric Signals (AREA)
JP2021550636A 2019-10-04 2020-09-18 撮像装置 Active JP7570013B2 (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2019183830 2019-10-04
JP2019183830 2019-10-04
PCT/JP2020/035645 WO2021065587A1 (ja) 2019-10-04 2020-09-18 撮像装置

Publications (3)

Publication Number Publication Date
JPWO2021065587A1 true JPWO2021065587A1 (https=) 2021-04-08
JPWO2021065587A5 JPWO2021065587A5 (https=) 2022-06-10
JP7570013B2 JP7570013B2 (ja) 2024-10-21

Family

ID=75336452

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2021550636A Active JP7570013B2 (ja) 2019-10-04 2020-09-18 撮像装置

Country Status (3)

Country Link
US (1) US12342643B2 (https=)
JP (1) JP7570013B2 (https=)
WO (1) WO2021065587A1 (https=)

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2023040318A (ja) * 2020-02-26 2023-03-23 ソニーセミコンダクタソリューションズ株式会社 撮像回路および撮像装置
JP7421532B2 (ja) * 2021-11-12 2024-01-24 キヤノン株式会社 光電変換装置及び発光装置
WO2024034411A1 (ja) * 2022-08-10 2024-02-15 ソニーセミコンダクタソリューションズ株式会社 半導体装置およびその製造方法
CN121587096A (zh) * 2023-08-04 2026-02-27 索尼半导体解决方案公司 光检测装置及电子设备
WO2025258400A1 (ja) * 2024-06-11 2025-12-18 ソニーセミコンダクタソリューションズ株式会社 トランジスタ、光検出装置及び電子機器

Citations (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2011146516A (ja) * 2010-01-14 2011-07-28 Fujifilm Corp 固体撮像素子、撮像装置、固体撮像素子の製造方法
JP2014011253A (ja) * 2012-06-28 2014-01-20 Sony Corp 固体撮像装置および電子機器
JP2016058633A (ja) * 2014-09-11 2016-04-21 株式会社東芝 撮像装置
JP2017163614A (ja) * 2012-12-05 2017-09-14 パナソニックＩｐマネジメント株式会社 固体撮像装置
JP2018182709A (ja) * 2017-04-11 2018-11-15 ソニーセミコンダクタソリューションズ株式会社 固体撮像装置、及び、電子機器
JP2018207100A (ja) * 2017-06-05 2018-12-27 パナソニックＩｐマネジメント株式会社 撮像装置
WO2019167551A1 (ja) * 2018-02-28 2019-09-06 パナソニックＩｐマネジメント株式会社 撮像装置

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5241759B2 (ja) 2002-06-27 2013-07-17 キヤノン株式会社 固体撮像装置

Patent Citations (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2011146516A (ja) * 2010-01-14 2011-07-28 Fujifilm Corp 固体撮像素子、撮像装置、固体撮像素子の製造方法
JP2014011253A (ja) * 2012-06-28 2014-01-20 Sony Corp 固体撮像装置および電子機器
JP2017163614A (ja) * 2012-12-05 2017-09-14 パナソニックＩｐマネジメント株式会社 固体撮像装置
JP2016058633A (ja) * 2014-09-11 2016-04-21 株式会社東芝 撮像装置
JP2018182709A (ja) * 2017-04-11 2018-11-15 ソニーセミコンダクタソリューションズ株式会社 固体撮像装置、及び、電子機器
JP2018207100A (ja) * 2017-06-05 2018-12-27 パナソニックＩｐマネジメント株式会社 撮像装置
WO2019167551A1 (ja) * 2018-02-28 2019-09-06 パナソニックＩｐマネジメント株式会社 撮像装置

Also Published As

Publication number Publication date
US12342643B2 (en) 2025-06-24
WO2021065587A1 (ja) 2021-04-08
JP7570013B2 (ja) 2024-10-21
US20220208816A1 (en) 2022-06-30

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