JPWO2021053836A1 - - Google Patents

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Publication number
JPWO2021053836A1
JPWO2021053836A1 JP2021546174A JP2021546174A JPWO2021053836A1 JP WO2021053836 A1 JPWO2021053836 A1 JP WO2021053836A1 JP 2021546174 A JP2021546174 A JP 2021546174A JP 2021546174 A JP2021546174 A JP 2021546174A JP WO2021053836 A1 JPWO2021053836 A1 JP WO2021053836A1
Authority
JP
Japan
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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Application number
JP2021546174A
Other versions
JP7198939B2 (ja
JPWO2021053836A5 (ja
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
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Publication of JPWO2021053836A1 publication Critical patent/JPWO2021053836A1/ja
Publication of JPWO2021053836A5 publication Critical patent/JPWO2021053836A5/ja
Application granted granted Critical
Publication of JP7198939B2 publication Critical patent/JP7198939B2/ja
Active legal-status Critical Current
Anticipated expiration legal-status Critical

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Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/4401—Means for minimising impurities, e.g. dust, moisture or residual gas, in the reaction chamber
    • C23C16/4405—Cleaning of reactor or parts inside the reactor by using reactive gases
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/46—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for heating the substrate
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/52—Controlling or regulating the coating process
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02521—Materials
    • H01L21/02524—Group 14 semiconducting materials
    • H01L21/02532—Silicon, silicon germanium, germanium
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/0257—Doping during depositing
    • H01L21/02573—Conductivity type
    • H01L21/02576—N-type
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/0257—Doping during depositing
    • H01L21/02573—Conductivity type
    • H01L21/02579—P-type
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67098—Apparatus for thermal treatment
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67242—Apparatus for monitoring, sorting or marking
    • H01L21/67248—Temperature monitoring
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02612—Formation types
    • H01L21/02617—Deposition types
    • H01L21/0262—Reduction or decomposition of gaseous compounds, e.g. CVD
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67098—Apparatus for thermal treatment
    • H01L21/67103—Apparatus for thermal treatment mainly by conduction

Landscapes

  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Computer Hardware Design (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Manufacturing & Machinery (AREA)
  • General Physics & Mathematics (AREA)
  • Physics & Mathematics (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Mechanical Engineering (AREA)
  • Materials Engineering (AREA)
  • Chemical Vapour Deposition (AREA)
JP2021546174A 2019-09-20 2019-09-27 半導体装置の製造方法、基板処理方法、基板処理装置、およびプログラム Active JP7198939B2 (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2019171532 2019-09-20
JP2019171532 2019-09-20
PCT/JP2019/038376 WO2021053836A1 (ja) 2019-09-20 2019-09-27 半導体装置の製造方法、基板処理装置、およびプログラム

Publications (3)

Publication Number Publication Date
JPWO2021053836A1 true JPWO2021053836A1 (ja) 2021-03-25
JPWO2021053836A5 JPWO2021053836A5 (ja) 2022-03-02
JP7198939B2 JP7198939B2 (ja) 2023-01-04

Family

ID=74883646

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2021546174A Active JP7198939B2 (ja) 2019-09-20 2019-09-27 半導体装置の製造方法、基板処理方法、基板処理装置、およびプログラム

Country Status (6)

Country Link
US (1) US20220178019A1 (ja)
JP (1) JP7198939B2 (ja)
KR (1) KR20220035234A (ja)
CN (1) CN113994457A (ja)
TW (1) TWI766340B (ja)
WO (1) WO2021053836A1 (ja)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP7411696B2 (ja) 2022-01-11 2024-01-11 株式会社Kokusai Electric クリーニング方法、半導体装置の製造方法、基板処理装置及びプログラム

Citations (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH1116858A (ja) * 1997-06-21 1999-01-22 Tokyo Electron Ltd 成膜装置のクリーニング方法及び処理方法
JP2001131751A (ja) * 1999-11-01 2001-05-15 Nec Corp 気相成長装置および半導体装置の製造方法
WO2009119177A1 (ja) * 2008-03-28 2009-10-01 東京エレクトロン株式会社 成膜方法、成膜装置および記憶媒体
WO2011013810A1 (ja) * 2009-07-31 2011-02-03 株式会社 アルバック 半導体装置の製造方法及び半導体装置の製造装置
JP2011068984A (ja) * 2009-08-27 2011-04-07 Hitachi Kokusai Electric Inc 半導体装置の製造方法、クリーニング方法および基板処理装置
JP2017069230A (ja) * 2015-09-28 2017-04-06 株式会社日立国際電気 半導体装置の製造方法、基板処理装置およびプログラム
JP2019145705A (ja) * 2018-02-22 2019-08-29 株式会社Ｋｏｋｕｓａｉ Ｅｌｅｃｔｒｉｃ 処理容器内の部材をクリーニングする方法、半導体装置の製造方法、基板処理装置、およびプログラム

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2002222805A (ja) 2001-01-25 2002-08-09 Hitachi Kokusai Electric Inc 基板処理装置
US20050279384A1 (en) * 2004-06-17 2005-12-22 Guidotti Emmanuel P Method and processing system for controlling a chamber cleaning process
JP6131162B2 (ja) * 2012-11-08 2017-05-17 株式会社Ｓｃｒｅｅｎホールディングス 基板処理方法および基板処理装置
JP6342670B2 (ja) * 2014-02-17 2018-06-13 株式会社日立国際電気 クリーニング方法、半導体装置の製造方法、基板処理装置及びプログラム

Patent Citations (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH1116858A (ja) * 1997-06-21 1999-01-22 Tokyo Electron Ltd 成膜装置のクリーニング方法及び処理方法
JP2001131751A (ja) * 1999-11-01 2001-05-15 Nec Corp 気相成長装置および半導体装置の製造方法
WO2009119177A1 (ja) * 2008-03-28 2009-10-01 東京エレクトロン株式会社 成膜方法、成膜装置および記憶媒体
WO2011013810A1 (ja) * 2009-07-31 2011-02-03 株式会社 アルバック 半導体装置の製造方法及び半導体装置の製造装置
JP2011068984A (ja) * 2009-08-27 2011-04-07 Hitachi Kokusai Electric Inc 半導体装置の製造方法、クリーニング方法および基板処理装置
JP2017069230A (ja) * 2015-09-28 2017-04-06 株式会社日立国際電気 半導体装置の製造方法、基板処理装置およびプログラム
JP2019145705A (ja) * 2018-02-22 2019-08-29 株式会社Ｋｏｋｕｓａｉ Ｅｌｅｃｔｒｉｃ 処理容器内の部材をクリーニングする方法、半導体装置の製造方法、基板処理装置、およびプログラム

Also Published As

Publication number Publication date
TWI766340B (zh) 2022-06-01
TW202129713A (zh) 2021-08-01
JP7198939B2 (ja) 2023-01-04
WO2021053836A1 (ja) 2021-03-25
CN113994457A (zh) 2022-01-28
KR20220035234A (ko) 2022-03-21
US20220178019A1 (en) 2022-06-09

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