JPWO2021053453A1 - - Google Patents

Info

Publication number
JPWO2021053453A1
JPWO2021053453A1 JP2021546060A JP2021546060A JPWO2021053453A1 JP WO2021053453 A1 JPWO2021053453 A1 JP WO2021053453A1 JP 2021546060 A JP2021546060 A JP 2021546060A JP 2021546060 A JP2021546060 A JP 2021546060A JP WO2021053453 A1 JPWO2021053453 A1 JP WO2021053453A1
Authority
JP
Japan
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2021546060A
Other versions
JPWO2021053453A5 (ja
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Publication of JPWO2021053453A1 publication Critical patent/JPWO2021053453A1/ja
Publication of JPWO2021053453A5 publication Critical patent/JPWO2021053453A5/ja
Pending legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/06—Auxiliary circuits, e.g. for writing into memory
    • G11C16/08—Address circuits; Decoders; Word-line control circuits
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C7/00—Arrangements for writing information into, or reading information out from, a digital store
    • G11C7/06—Sense amplifiers; Associated circuits, e.g. timing or triggering circuits
    • G11C7/065—Differential amplifiers of latching type
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
    • G11C11/401—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
    • G11C11/4063—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing
    • G11C11/407—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing for memory cells of the field-effect type
    • G11C11/409—Read-write [R-W] circuits 
    • G11C11/4091—Sense or sense/refresh amplifiers, or associated sense circuitry, e.g. for coupled bit-line precharging, equalising or isolating
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/54—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using elements simulating biological cells, e.g. neuron
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/06—Auxiliary circuits, e.g. for writing into memory
    • G11C16/24—Bit-line control circuits
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C7/00—Arrangements for writing information into, or reading information out from, a digital store
    • G11C7/06—Sense amplifiers; Associated circuits, e.g. timing or triggering circuits
    • G11C7/08—Control thereof
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/06—Auxiliary circuits, e.g. for writing into memory
    • G11C16/10—Programming or data input circuits
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/06—Auxiliary circuits, e.g. for writing into memory
    • G11C16/26—Sensing or reading circuits; Data output circuits
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B12/00—Dynamic random access memory [DRAM] devices
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02D—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN INFORMATION AND COMMUNICATION TECHNOLOGIES [ICT], I.E. INFORMATION AND COMMUNICATION TECHNOLOGIES AIMING AT THE REDUCTION OF THEIR OWN ENERGY USE
    • Y02D10/00—Energy efficient computing, e.g. low power processors, power management or thermal management
JP2021546060A 2019-09-20 2020-09-08 Pending JPWO2021053453A1 (ja)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2019172147 2019-09-20
PCT/IB2020/058318 WO2021053453A1 (ja) 2019-09-20 2020-09-08 半導体装置

Publications (2)

Publication Number Publication Date
JPWO2021053453A1 true JPWO2021053453A1 (ja) 2021-03-25
JPWO2021053453A5 JPWO2021053453A5 (ja) 2023-08-30

Family

ID=74883969

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2021546060A Pending JPWO2021053453A1 (ja) 2019-09-20 2020-09-08

Country Status (4)

Country Link
US (1) US20220343954A1 (ja)
JP (1) JPWO2021053453A1 (ja)
DE (1) DE112020004469T5 (ja)
WO (1) WO2021053453A1 (ja)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20210121143A (ko) * 2019-01-29 2021-10-07 가부시키가이샤 한도오따이 에네루기 켄큐쇼 기억 장치
US11908947B2 (en) 2019-08-08 2024-02-20 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
CN114792688A (zh) * 2021-01-26 2022-07-26 上峰科技股份有限公司 电子系统、与宽带隙半导体器件集成的可编程电阻存储器及其操作方法

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3260357B2 (ja) * 1990-01-24 2002-02-25 株式会社日立製作所 情報処理装置
JP3601883B2 (ja) * 1994-11-22 2004-12-15 株式会社ルネサステクノロジ 半導体装置
TWI555128B (zh) 2010-08-06 2016-10-21 半導體能源研究所股份有限公司 半導體裝置及半導體裝置的驅動方法
WO2012029638A1 (en) 2010-09-03 2012-03-08 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
WO2016135591A1 (en) * 2015-02-26 2016-09-01 Semiconductor Energy Laboratory Co., Ltd. Memory system and information processing system
US10242728B2 (en) * 2016-10-27 2019-03-26 Samsung Electronics Co., Ltd. DPU architecture
JP2019056955A (ja) * 2017-09-19 2019-04-11 東芝メモリ株式会社 メモリシステム
US11322199B1 (en) * 2020-10-09 2022-05-03 Qualcomm Incorporated Compute-in-memory (CIM) cell circuits employing capacitive storage circuits for reduced area and CIM bit cell array circuits

Also Published As

Publication number Publication date
DE112020004469T5 (de) 2022-08-04
US20220343954A1 (en) 2022-10-27
WO2021053453A1 (ja) 2021-03-25

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Legal Events

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Effective date: 20230822

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