JPWO2021002104A1 - - Google Patents

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Publication number
JPWO2021002104A1
JPWO2021002104A1 JP2021529906A JP2021529906A JPWO2021002104A1 JP WO2021002104 A1 JPWO2021002104 A1 JP WO2021002104A1 JP 2021529906 A JP2021529906 A JP 2021529906A JP 2021529906 A JP2021529906 A JP 2021529906A JP WO2021002104 A1 JPWO2021002104 A1 JP WO2021002104A1
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JP
Japan
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JP2021529906A
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JP7269343B2 (ja
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Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K30/00—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation
    • H10K30/30—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation comprising bulk heterojunctions, e.g. interpenetrating networks of donor and acceptor material domains
    • H10K30/35—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation comprising bulk heterojunctions, e.g. interpenetrating networks of donor and acceptor material domains comprising inorganic nanostructures, e.g. CdSe nanoparticles
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K11/00—Luminescent, e.g. electroluminescent, chemiluminescent materials
    • C09K11/02—Use of particular materials as binders, particle coatings or suspension media therefor
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K11/00—Luminescent, e.g. electroluminescent, chemiluminescent materials
    • C09K11/08—Luminescent, e.g. electroluminescent, chemiluminescent materials containing inorganic luminescent materials
    • C09K11/66—Luminescent, e.g. electroluminescent, chemiluminescent materials containing inorganic luminescent materials containing germanium, tin or lead
    • C09K11/661—Chalcogenides
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
    • H01L31/0256—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by the material
    • H01L31/0264—Inorganic materials
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
    • H01L31/10—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors characterised by at least one potential-jump barrier or surface barrier, e.g. phototransistors
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y15/00—Nanotechnology for interacting, sensing or actuating, e.g. quantum dots as markers in protein assays or molecular motors
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y20/00—Nanooptics, e.g. quantum optics or photonic crystals
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K30/00—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation
    • H10K30/30—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation comprising bulk heterojunctions, e.g. interpenetrating networks of donor and acceptor material domains
    • H10K30/35—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation comprising bulk heterojunctions, e.g. interpenetrating networks of donor and acceptor material domains comprising inorganic nanostructures, e.g. CdSe nanoparticles
    • H10K30/352—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation comprising bulk heterojunctions, e.g. interpenetrating networks of donor and acceptor material domains comprising inorganic nanostructures, e.g. CdSe nanoparticles the inorganic nanostructures being nanotubes or nanowires, e.g. CdTe nanotubes in P3HT polymer
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K39/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic radiation-sensitive element covered by group H10K30/00
    • H10K39/30—Devices controlled by radiation
    • H10K39/32—Organic image sensors
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/549—Organic PV cells

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Organic Chemistry (AREA)
  • Inorganic Chemistry (AREA)
  • Electromagnetism (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Nanotechnology (AREA)
  • Light Receiving Elements (AREA)
JP2021529906A 2019-07-01 2020-05-15 光検出素子、光検出素子の製造方法、イメージセンサ、分散液および半導体膜 Active JP7269343B2 (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2019123102 2019-07-01
JP2019123102 2019-07-01
PCT/JP2020/019470 WO2021002104A1 (ja) 2019-07-01 2020-05-15 光検出素子、光検出素子の製造方法、イメージセンサ、分散液および半導体膜

Publications (2)

Publication Number Publication Date
JPWO2021002104A1 true JPWO2021002104A1 (ja) 2021-01-07
JP7269343B2 JP7269343B2 (ja) 2023-05-08

Family

ID=74101011

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2021529906A Active JP7269343B2 (ja) 2019-07-01 2020-05-15 光検出素子、光検出素子の製造方法、イメージセンサ、分散液および半導体膜

Country Status (4)

Country Link
US (1) US20220115610A1 (ja)
JP (1) JP7269343B2 (ja)
TW (1) TW202103354A (ja)
WO (1) WO2021002104A1 (ja)

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP7391600B2 (ja) * 2019-10-11 2023-12-05 キヤノン株式会社 光電変換素子
KR20210149975A (ko) * 2020-06-02 2021-12-10 삼성디스플레이 주식회사 양자점 조성물, 발광 소자 및 이의 제조방법
WO2023234096A1 (ja) * 2022-06-01 2023-12-07 富士フイルム株式会社 光検出素子、イメージセンサおよび光検出素子の製造方法
WO2023234095A1 (ja) * 2022-06-01 2023-12-07 富士フイルム株式会社 光検出素子、イメージセンサおよび光検出素子の製造方法
WO2023234094A1 (ja) * 2022-06-01 2023-12-07 富士フイルム株式会社 光検出素子、イメージセンサおよび光検出素子の製造方法
CN115678346B (zh) * 2022-11-21 2023-06-06 苏州大学 一种PbS量子点墨水、制备方法及在太阳能电池中的应用

Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20110002694A (ko) * 2009-07-02 2011-01-10 한국화학연구원 근적외선 감지 소자 및 그 제조방법
JP2016513361A (ja) * 2013-01-25 2016-05-12 ユニバーシティー オブ フロリダ リサーチ ファウンデーション，インコーポレイテッドＵｎｉｖｅｒｓｉｔｙ Ｏｆ Ｆｌｏｒｉｄａ Ｒｅｓｅａｒｃｈ Ｆｏｕｎｄａｔｉｏｎ，Ｉｎｃ． 溶液処理法による硫化鉛光検出器を用いた新規の赤外線画像センサー
JP2017516320A (ja) * 2014-05-09 2017-06-15 マサチューセッツ インスティテュート オブ テクノロジー リガンド交換を介したナノクリスタルのエネルギーレベル修正
WO2018016213A1 (ja) * 2016-07-20 2018-01-25 ソニー株式会社 半導体膜及びその製造方法、並びに、光電変換素子、固体撮像素子及び電子装置
CN109148695A (zh) * 2017-06-28 2019-01-04 Tcl集团股份有限公司 一种金属氧化物纳米颗粒薄膜的制备方法及电学器件
US20190129302A1 (en) * 2017-10-27 2019-05-02 Samsung Sdi Co., Ltd. Composition including quantum dot, manufacturing method quantum dot and color filter

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20180018660A (ko) * 2015-06-11 2018-02-21 유니버시티 오브 플로리다 리서치 파운데이션, 인코포레이티드 단분산, ir-흡수 나노입자, 및 관련 방법 및 장치

Patent Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20110002694A (ko) * 2009-07-02 2011-01-10 한국화학연구원 근적외선 감지 소자 및 그 제조방법
JP2016513361A (ja) * 2013-01-25 2016-05-12 ユニバーシティー オブ フロリダ リサーチ ファウンデーション，インコーポレイテッドＵｎｉｖｅｒｓｉｔｙ Ｏｆ Ｆｌｏｒｉｄａ Ｒｅｓｅａｒｃｈ Ｆｏｕｎｄａｔｉｏｎ，Ｉｎｃ． 溶液処理法による硫化鉛光検出器を用いた新規の赤外線画像センサー
JP2017516320A (ja) * 2014-05-09 2017-06-15 マサチューセッツ インスティテュート オブ テクノロジー リガンド交換を介したナノクリスタルのエネルギーレベル修正
WO2018016213A1 (ja) * 2016-07-20 2018-01-25 ソニー株式会社 半導体膜及びその製造方法、並びに、光電変換素子、固体撮像素子及び電子装置
CN109148695A (zh) * 2017-06-28 2019-01-04 Tcl集团股份有限公司 一种金属氧化物纳米颗粒薄膜的制备方法及电学器件
US20190129302A1 (en) * 2017-10-27 2019-05-02 Samsung Sdi Co., Ltd. Composition including quantum dot, manufacturing method quantum dot and color filter

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
VEENA, E. ET AL.: "Influence of Lead Precursor Concentration on Properties of Spray Deposited Lead Sulphide Thin Films", INTERNATIONAL JOURNAL OF PURE AND APPLIED PHYSICS, vol. 12, no. 2, JPN6022036299, 2016, pages 97 - 112, XP055782938, ISSN: 0004862872 *

Also Published As

Publication number Publication date
WO2021002104A1 (ja) 2021-01-07
TW202103354A (zh) 2021-01-16
JP7269343B2 (ja) 2023-05-08
US20220115610A1 (en) 2022-04-14

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