JPWO2020213291A1 - - Google Patents
Info
- Publication number
- JPWO2020213291A1 JPWO2020213291A1 JP2021514818A JP2021514818A JPWO2020213291A1 JP WO2020213291 A1 JPWO2020213291 A1 JP WO2020213291A1 JP 2021514818 A JP2021514818 A JP 2021514818A JP 2021514818 A JP2021514818 A JP 2021514818A JP WO2020213291 A1 JPWO2020213291 A1 JP WO2020213291A1
- Authority
- JP
- Japan
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/778—Field effect transistors with two-dimensional charge carrier gas channel, e.g. HEMT ; with two-dimensional charge-carrier layer formed at a heterojunction interface
- H01L29/7786—Field effect transistors with two-dimensional charge carrier gas channel, e.g. HEMT ; with two-dimensional charge-carrier layer formed at a heterojunction interface with direct single heterostructure, i.e. with wide bandgap layer formed on top of active layer, e.g. direct single heterostructure MIS-like HEMT
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
- H01L29/0657—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by the shape of the body
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/402—Field plates
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/41—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions
- H01L29/417—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions carrying the current to be rectified, amplified or switched
- H01L29/41725—Source or drain electrodes for field effect devices
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
- H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
- H01L29/66409—Unipolar field-effect transistors
- H01L29/66446—Unipolar field-effect transistors with an active layer made of a group 13/15 material, e.g. group 13/15 velocity modulation transistor [VMT], group 13/15 negative resistance FET [NERFET]
- H01L29/66462—Unipolar field-effect transistors with an active layer made of a group 13/15 material, e.g. group 13/15 velocity modulation transistor [VMT], group 13/15 negative resistance FET [NERFET] with a heterojunction interface channel or gate, e.g. HFET, HIGFET, SISFET, HJFET, HEMT
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
- H01L29/10—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode not carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
- H01L29/1066—Gate region of field-effect devices with PN junction gate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/12—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
- H01L29/20—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only AIIIBV compounds
- H01L29/2003—Nitride compounds
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2019077283 | 2019-04-15 | ||
PCT/JP2020/009797 WO2020213291A1 (ja) | 2019-04-15 | 2020-03-06 | 窒化物半導体装置およびその製造方法 |
Publications (1)
Publication Number | Publication Date |
---|---|
JPWO2020213291A1 true JPWO2020213291A1 (ja) | 2020-10-22 |
Family
ID=72836811
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2021514818A Pending JPWO2020213291A1 (ja) | 2019-04-15 | 2020-03-06 |
Country Status (5)
Country | Link |
---|---|
US (1) | US20220209001A1 (ja) |
JP (1) | JPWO2020213291A1 (ja) |
CN (1) | CN113748519A (ja) |
TW (1) | TW202105524A (ja) |
WO (1) | WO2020213291A1 (ja) |
Families Citing this family (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPWO2020230434A1 (ja) * | 2019-05-10 | 2020-11-19 | ||
CN111682066A (zh) * | 2020-06-19 | 2020-09-18 | 英诺赛科(珠海)科技有限公司 | 具有改善栅极漏电流的半导体器件 |
JP7336606B2 (ja) | 2020-11-26 | 2023-08-31 | ローム株式会社 | 窒化物半導体装置 |
CN113972270A (zh) * | 2021-09-10 | 2022-01-25 | 华为技术有限公司 | 场效应管、其制备方法及电子电路 |
WO2023157452A1 (ja) * | 2022-02-17 | 2023-08-24 | ローム株式会社 | 窒化物半導体装置 |
WO2024024475A1 (ja) * | 2022-07-27 | 2024-02-01 | ローム株式会社 | 窒化物半導体装置 |
Family Cites Families (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP4712683B2 (ja) * | 2006-12-21 | 2011-06-29 | パナソニック株式会社 | トランジスタおよびその製造方法 |
KR101922122B1 (ko) * | 2012-09-28 | 2018-11-26 | 삼성전자주식회사 | 노멀리 오프 고전자이동도 트랜지스터 |
JP6170007B2 (ja) * | 2014-04-10 | 2017-07-26 | トヨタ自動車株式会社 | スイッチング素子 |
JP6767741B2 (ja) * | 2015-10-08 | 2020-10-14 | ローム株式会社 | 窒化物半導体装置およびその製造方法 |
-
2020
- 2020-03-06 JP JP2021514818A patent/JPWO2020213291A1/ja active Pending
- 2020-03-06 US US17/603,849 patent/US20220209001A1/en active Pending
- 2020-03-06 CN CN202080028512.2A patent/CN113748519A/zh active Pending
- 2020-03-06 WO PCT/JP2020/009797 patent/WO2020213291A1/ja active Application Filing
- 2020-04-13 TW TW109112322A patent/TW202105524A/zh unknown
Also Published As
Publication number | Publication date |
---|---|
WO2020213291A1 (ja) | 2020-10-22 |
TW202105524A (zh) | 2021-02-01 |
CN113748519A (zh) | 2021-12-03 |
US20220209001A1 (en) | 2022-06-30 |
Similar Documents
Legal Events
Date | Code | Title | Description |
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A621 | Written request for application examination |
Free format text: JAPANESE INTERMEDIATE CODE: A621 Effective date: 20230120 |
|
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Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20240314 |
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A521 | Request for written amendment filed |
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