JPWO2020189082A1 - - Google Patents

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Publication number
JPWO2020189082A1
JPWO2020189082A1 JP2021506233A JP2021506233A JPWO2020189082A1 JP WO2020189082 A1 JPWO2020189082 A1 JP WO2020189082A1 JP 2021506233 A JP2021506233 A JP 2021506233A JP 2021506233 A JP2021506233 A JP 2021506233A JP WO2020189082 A1 JPWO2020189082 A1 JP WO2020189082A1
Authority
JP
Japan
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP2021506233A
Other versions
JP7454549B2 (ja
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Publication of JPWO2020189082A1 publication Critical patent/JPWO2020189082A1/ja
Application granted granted Critical
Publication of JP7454549B2 publication Critical patent/JP7454549B2/ja
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Classifications

    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01S—RADIO DIRECTION-FINDING; RADIO NAVIGATION; DETERMINING DISTANCE OR VELOCITY BY USE OF RADIO WAVES; LOCATING OR PRESENCE-DETECTING BY USE OF THE REFLECTION OR RERADIATION OF RADIO WAVES; ANALOGOUS ARRANGEMENTS USING OTHER WAVES
    • G01S7/00—Details of systems according to groups G01S13/00, G01S15/00, G01S17/00
    • G01S7/48—Details of systems according to groups G01S13/00, G01S15/00, G01S17/00 of systems according to group G01S17/00
    • G01S7/481—Constructional features, e.g. arrangements of optical elements
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01S—RADIO DIRECTION-FINDING; RADIO NAVIGATION; DETERMINING DISTANCE OR VELOCITY BY USE OF RADIO WAVES; LOCATING OR PRESENCE-DETECTING BY USE OF THE REFLECTION OR RERADIATION OF RADIO WAVES; ANALOGOUS ARRANGEMENTS USING OTHER WAVES
    • G01S17/00—Systems using the reflection or reradiation of electromagnetic waves other than radio waves, e.g. lidar systems
    • G01S17/88—Lidar systems specially adapted for specific applications
    • G01S17/93—Lidar systems specially adapted for specific applications for anti-collision purposes
    • G01S17/931—Lidar systems specially adapted for specific applications for anti-collision purposes of land vehicles
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01S—RADIO DIRECTION-FINDING; RADIO NAVIGATION; DETERMINING DISTANCE OR VELOCITY BY USE OF RADIO WAVES; LOCATING OR PRESENCE-DETECTING BY USE OF THE REFLECTION OR RERADIATION OF RADIO WAVES; ANALOGOUS ARRANGEMENTS USING OTHER WAVES
    • G01S7/00—Details of systems according to groups G01S13/00, G01S15/00, G01S17/00
    • G01S7/48—Details of systems according to groups G01S13/00, G01S15/00, G01S17/00 of systems according to group G01S17/00
    • G01S7/481—Constructional features, e.g. arrangements of optical elements
    • G01S7/4816—Constructional features, e.g. arrangements of optical elements of receivers alone
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01S—RADIO DIRECTION-FINDING; RADIO NAVIGATION; DETERMINING DISTANCE OR VELOCITY BY USE OF RADIO WAVES; LOCATING OR PRESENCE-DETECTING BY USE OF THE REFLECTION OR RERADIATION OF RADIO WAVES; ANALOGOUS ARRANGEMENTS USING OTHER WAVES
    • G01S17/00—Systems using the reflection or reradiation of electromagnetic waves other than radio waves, e.g. lidar systems
    • G01S17/02—Systems using the reflection of electromagnetic waves other than radio waves
    • G01S17/06—Systems determining position data of a target
    • G01S17/08—Systems determining position data of a target for measuring distance only
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/02—Details
    • H01L31/0232—Optical elements or arrangements associated with the device
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
    • H01L31/10—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors characterised by at least one potential-jump barrier or surface barrier, e.g. phototransistors
    • H01L31/101—Devices sensitive to infrared, visible or ultraviolet radiation
    • H01L31/102—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier or surface barrier
    • H01L31/107—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier or surface barrier the potential barrier working in avalanche mode, e.g. avalanche photodiode
JP2021506233A 2019-03-19 2020-02-07 センサチップ、電子機器、及び測距装置 Active JP7454549B2 (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2019050885 2019-03-19
JP2019050885 2019-03-19
PCT/JP2020/004788 WO2020189082A1 (ja) 2019-03-19 2020-02-07 センサチップ、電子機器、及び測距装置

Publications (2)

Publication Number Publication Date
JPWO2020189082A1 true JPWO2020189082A1 (ja) 2020-09-24
JP7454549B2 JP7454549B2 (ja) 2024-03-22

Family

ID=72520652

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2021506233A Active JP7454549B2 (ja) 2019-03-19 2020-02-07 センサチップ、電子機器、及び測距装置

Country Status (6)

Country Link
US (1) US20220163674A1 (ja)
JP (1) JP7454549B2 (ja)
KR (1) KR20210142617A (ja)
CN (1) CN113383431A (ja)
DE (1) DE112020001317T5 (ja)
WO (1) WO2020189082A1 (ja)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20230067986A1 (en) * 2021-08-31 2023-03-02 Taiwan Semiconductor Manufacturing Company, Ltd. Single-photon avalanche diode semiconductor device
JP7467401B2 (ja) 2021-09-22 2024-04-15 キヤノン株式会社 光電変換装置
TWI799057B (zh) * 2022-01-04 2023-04-11 力晶積成電子製造股份有限公司 影像感測器積體晶片及其形成方法

Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20060145056A1 (en) * 2004-12-30 2006-07-06 Jung Sun W Image sensor having diffractive lens and method for fabricating the same
JP2010226071A (ja) * 2009-02-24 2010-10-07 Hamamatsu Photonics Kk 半導体光検出素子
JP2014027178A (ja) * 2012-07-27 2014-02-06 Sharp Corp 固体撮像素子および電子情報機器
JP2017097072A (ja) * 2015-11-19 2017-06-01 日本電信電話株式会社 光分波器、光受信モジュールおよびその製造方法
JP2018088488A (ja) * 2016-11-29 2018-06-07 ソニーセミコンダクタソリューションズ株式会社 センサチップおよび電子機器
JP2018201005A (ja) * 2016-10-18 2018-12-20 ソニーセミコンダクタソリューションズ株式会社 光検出器

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2019050885A (ja) 2017-09-12 2019-04-04 株式会社ユニバーサルエンターテインメント 遊技機

Patent Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20060145056A1 (en) * 2004-12-30 2006-07-06 Jung Sun W Image sensor having diffractive lens and method for fabricating the same
JP2010226071A (ja) * 2009-02-24 2010-10-07 Hamamatsu Photonics Kk 半導体光検出素子
JP2014027178A (ja) * 2012-07-27 2014-02-06 Sharp Corp 固体撮像素子および電子情報機器
JP2017097072A (ja) * 2015-11-19 2017-06-01 日本電信電話株式会社 光分波器、光受信モジュールおよびその製造方法
JP2018201005A (ja) * 2016-10-18 2018-12-20 ソニーセミコンダクタソリューションズ株式会社 光検出器
JP2018088488A (ja) * 2016-11-29 2018-06-07 ソニーセミコンダクタソリューションズ株式会社 センサチップおよび電子機器

Also Published As

Publication number Publication date
KR20210142617A (ko) 2021-11-25
DE112020001317T5 (de) 2021-12-16
JP7454549B2 (ja) 2024-03-22
WO2020189082A1 (ja) 2020-09-24
CN113383431A (zh) 2021-09-10
US20220163674A1 (en) 2022-05-26

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