JPWO2020188809A1 - - Google Patents
Info
- Publication number
- JPWO2020188809A1 JPWO2020188809A1 JP2021506106A JP2021506106A JPWO2020188809A1 JP WO2020188809 A1 JPWO2020188809 A1 JP WO2020188809A1 JP 2021506106 A JP2021506106 A JP 2021506106A JP 2021506106 A JP2021506106 A JP 2021506106A JP WO2020188809 A1 JPWO2020188809 A1 JP WO2020188809A1
- Authority
- JP
- Japan
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
- H01J37/32082—Radio frequency generated discharge
- H01J37/321—Radio frequency generated discharge the radio frequency energy being inductively coupled to the plasma
- H01J37/3211—Antennas, e.g. particular shapes of coils
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
- H01J37/32082—Radio frequency generated discharge
- H01J37/321—Radio frequency generated discharge the radio frequency energy being inductively coupled to the plasma
- H01J37/32119—Windows
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/32458—Vessel
- H01J37/32522—Temperature
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05H—PLASMA TECHNIQUE; PRODUCTION OF ACCELERATED ELECTRICALLY-CHARGED PARTICLES OR OF NEUTRONS; PRODUCTION OR ACCELERATION OF NEUTRAL MOLECULAR OR ATOMIC BEAMS
- H05H1/00—Generating plasma; Handling plasma
- H05H1/24—Generating plasma
- H05H1/46—Generating plasma using applied electromagnetic fields, e.g. high frequency or microwave energy
Landscapes
- Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Plasma & Fusion (AREA)
- Chemical & Material Sciences (AREA)
- Analytical Chemistry (AREA)
- Electromagnetism (AREA)
- Spectroscopy & Molecular Physics (AREA)
- Plasma Technology (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
PCT/JP2019/011829 WO2020188809A1 (en) | 2019-03-20 | 2019-03-20 | Plasma treatment device |
Publications (2)
Publication Number | Publication Date |
---|---|
JPWO2020188809A1 true JPWO2020188809A1 (en) | 2020-09-24 |
JP7232410B2 JP7232410B2 (en) | 2023-03-03 |
Family
ID=72520718
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2021506106A Active JP7232410B2 (en) | 2019-03-20 | 2019-03-20 | Plasma processing equipment |
Country Status (4)
Country | Link |
---|---|
JP (1) | JP7232410B2 (en) |
KR (1) | KR20210129179A (en) |
CN (1) | CN113632592A (en) |
WO (1) | WO2020188809A1 (en) |
Families Citing this family (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2023113083A (en) * | 2022-02-02 | 2023-08-15 | 日新電機株式会社 | Sputtering device |
JP2023114390A (en) * | 2022-02-04 | 2023-08-17 | 日新電機株式会社 | Sputtering device |
JP2024067696A (en) * | 2022-11-07 | 2024-05-17 | 日新電機株式会社 | Plasma processing apparatus |
Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4795879A (en) * | 1987-04-13 | 1989-01-03 | The United States Of America As Represented By The United States Department Of Energy | Method of processing materials using an inductively coupled plasma |
JPH1055983A (en) * | 1996-03-12 | 1998-02-24 | Varian Assoc Inc | Inductively coupled plasma reactor having faraday sputter shield |
US20140342568A1 (en) * | 2013-05-16 | 2014-11-20 | Lam Research Corporation | Controlling temperature of a faraday shield |
US20180374685A1 (en) * | 2017-06-22 | 2018-12-27 | Applied Materials, Inc. | Plasma reactor with electrode array in ceiling |
Family Cites Families (15)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6474258B2 (en) * | 1999-03-26 | 2002-11-05 | Tokyo Electron Limited | Apparatus and method for improving plasma distribution and performance in an inductively coupled plasma |
JP2002261086A (en) * | 2001-03-06 | 2002-09-13 | Tokyo Electron Ltd | Plasma treatment device |
JP3714924B2 (en) * | 2002-07-11 | 2005-11-09 | 東京エレクトロン株式会社 | Plasma processing equipment |
KR100452920B1 (en) * | 2002-07-19 | 2004-10-14 | 한국디엔에스 주식회사 | Inductive coupled plasma etching apparatus |
US20040129221A1 (en) * | 2003-01-08 | 2004-07-08 | Jozef Brcka | Cooled deposition baffle in high density plasma semiconductor processing |
CN100534257C (en) * | 2006-08-22 | 2009-08-26 | 大连理工大学 | Plane Faraday screening system of radio frequency inductive coupled plasma source |
JP2009191311A (en) * | 2008-02-14 | 2009-08-27 | Mitsui Eng & Shipbuild Co Ltd | Atomic layer deposition apparatus |
CN202616187U (en) * | 2012-05-15 | 2012-12-19 | 中微半导体设备(上海)有限公司 | Faraday shielding device with cooling function and plasma processing equipment |
JP6051788B2 (en) * | 2012-11-05 | 2016-12-27 | 東京エレクトロン株式会社 | Plasma processing apparatus and plasma generating apparatus |
JP6182375B2 (en) * | 2013-07-18 | 2017-08-16 | 株式会社日立ハイテクノロジーズ | Plasma processing equipment |
JP6135455B2 (en) * | 2013-10-25 | 2017-05-31 | 東京エレクトロン株式会社 | Plasma processing apparatus and plasma processing method |
JP6277055B2 (en) * | 2014-04-25 | 2018-02-07 | 株式会社日立ハイテクノロジーズ | Plasma processing equipment |
KR101695748B1 (en) * | 2015-07-20 | 2017-01-23 | (주)얼라이드 테크 파인더즈 | Plasma device |
JP5865472B2 (en) * | 2014-12-09 | 2016-02-17 | 株式会社日立ハイテクノロジーズ | Plasma processing equipment |
JP2017004665A (en) | 2015-06-08 | 2017-01-05 | 東京エレクトロン株式会社 | Plasma processing apparatus |
-
2019
- 2019-03-20 CN CN201980094225.9A patent/CN113632592A/en active Pending
- 2019-03-20 JP JP2021506106A patent/JP7232410B2/en active Active
- 2019-03-20 KR KR1020217030635A patent/KR20210129179A/en not_active Application Discontinuation
- 2019-03-20 WO PCT/JP2019/011829 patent/WO2020188809A1/en active Application Filing
Patent Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4795879A (en) * | 1987-04-13 | 1989-01-03 | The United States Of America As Represented By The United States Department Of Energy | Method of processing materials using an inductively coupled plasma |
JPH1055983A (en) * | 1996-03-12 | 1998-02-24 | Varian Assoc Inc | Inductively coupled plasma reactor having faraday sputter shield |
US20140342568A1 (en) * | 2013-05-16 | 2014-11-20 | Lam Research Corporation | Controlling temperature of a faraday shield |
US20180374685A1 (en) * | 2017-06-22 | 2018-12-27 | Applied Materials, Inc. | Plasma reactor with electrode array in ceiling |
Also Published As
Publication number | Publication date |
---|---|
JP7232410B2 (en) | 2023-03-03 |
KR20210129179A (en) | 2021-10-27 |
CN113632592A (en) | 2021-11-09 |
WO2020188809A1 (en) | 2020-09-24 |
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