JPWO2020188809A1 - - Google Patents

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Publication number
JPWO2020188809A1
JPWO2020188809A1 JP2021506106A JP2021506106A JPWO2020188809A1 JP WO2020188809 A1 JPWO2020188809 A1 JP WO2020188809A1 JP 2021506106 A JP2021506106 A JP 2021506106A JP 2021506106 A JP2021506106 A JP 2021506106A JP WO2020188809 A1 JPWO2020188809 A1 JP WO2020188809A1
Authority
JP
Japan
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP2021506106A
Other languages
Japanese (ja)
Other versions
JP7232410B2 (en
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Publication of JPWO2020188809A1 publication Critical patent/JPWO2020188809A1/ja
Application granted granted Critical
Publication of JP7232410B2 publication Critical patent/JP7232410B2/en
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082—Radio frequency generated discharge
    • H01J37/321—Radio frequency generated discharge the radio frequency energy being inductively coupled to the plasma
    • H01J37/3211—Antennas, e.g. particular shapes of coils
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082—Radio frequency generated discharge
    • H01J37/321—Radio frequency generated discharge the radio frequency energy being inductively coupled to the plasma
    • H01J37/32119—Windows
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32458—Vessel
    • H01J37/32522—Temperature
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05H—PLASMA TECHNIQUE; PRODUCTION OF ACCELERATED ELECTRICALLY-CHARGED PARTICLES OR OF NEUTRONS; PRODUCTION OR ACCELERATION OF NEUTRAL MOLECULAR OR ATOMIC BEAMS
    • H05H1/00—Generating plasma; Handling plasma
    • H05H1/24—Generating plasma
    • H05H1/46—Generating plasma using applied electromagnetic fields, e.g. high frequency or microwave energy

Landscapes

  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Plasma & Fusion (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Electromagnetism (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Plasma Technology (AREA)
JP2021506106A 2019-03-20 2019-03-20 Plasma processing equipment Active JP7232410B2 (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
PCT/JP2019/011829 WO2020188809A1 (en) 2019-03-20 2019-03-20 Plasma treatment device

Publications (2)

Publication Number Publication Date
JPWO2020188809A1 true JPWO2020188809A1 (en) 2020-09-24
JP7232410B2 JP7232410B2 (en) 2023-03-03

Family

ID=72520718

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2021506106A Active JP7232410B2 (en) 2019-03-20 2019-03-20 Plasma processing equipment

Country Status (4)

Country Link
JP (1) JP7232410B2 (en)
KR (1) KR20210129179A (en)
CN (1) CN113632592A (en)
WO (1) WO2020188809A1 (en)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2023113083A (en) * 2022-02-02 2023-08-15 日新電機株式会社 Sputtering device
JP2023114390A (en) * 2022-02-04 2023-08-17 日新電機株式会社 Sputtering device
JP2024067696A (en) * 2022-11-07 2024-05-17 日新電機株式会社 Plasma processing apparatus

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4795879A (en) * 1987-04-13 1989-01-03 The United States Of America As Represented By The United States Department Of Energy Method of processing materials using an inductively coupled plasma
JPH1055983A (en) * 1996-03-12 1998-02-24 Varian Assoc Inc Inductively coupled plasma reactor having faraday sputter shield
US20140342568A1 (en) * 2013-05-16 2014-11-20 Lam Research Corporation Controlling temperature of a faraday shield
US20180374685A1 (en) * 2017-06-22 2018-12-27 Applied Materials, Inc. Plasma reactor with electrode array in ceiling

Family Cites Families (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6474258B2 (en) * 1999-03-26 2002-11-05 Tokyo Electron Limited Apparatus and method for improving plasma distribution and performance in an inductively coupled plasma
JP2002261086A (en) * 2001-03-06 2002-09-13 Tokyo Electron Ltd Plasma treatment device
JP3714924B2 (en) * 2002-07-11 2005-11-09 東京エレクトロン株式会社 Plasma processing equipment
KR100452920B1 (en) * 2002-07-19 2004-10-14 한국디엔에스 주식회사 Inductive coupled plasma etching apparatus
US20040129221A1 (en) * 2003-01-08 2004-07-08 Jozef Brcka Cooled deposition baffle in high density plasma semiconductor processing
CN100534257C (en) * 2006-08-22 2009-08-26 大连理工大学 Plane Faraday screening system of radio frequency inductive coupled plasma source
JP2009191311A (en) * 2008-02-14 2009-08-27 Mitsui Eng & Shipbuild Co Ltd Atomic layer deposition apparatus
CN202616187U (en) * 2012-05-15 2012-12-19 中微半导体设备(上海)有限公司 Faraday shielding device with cooling function and plasma processing equipment
JP6051788B2 (en) * 2012-11-05 2016-12-27 東京エレクトロン株式会社 Plasma processing apparatus and plasma generating apparatus
JP6182375B2 (en) * 2013-07-18 2017-08-16 株式会社日立ハイテクノロジーズ Plasma processing equipment
JP6135455B2 (en) * 2013-10-25 2017-05-31 東京エレクトロン株式会社 Plasma processing apparatus and plasma processing method
JP6277055B2 (en) * 2014-04-25 2018-02-07 株式会社日立ハイテクノロジーズ Plasma processing equipment
KR101695748B1 (en) * 2015-07-20 2017-01-23 (주)얼라이드 테크 파인더즈 Plasma device
JP5865472B2 (en) * 2014-12-09 2016-02-17 株式会社日立ハイテクノロジーズ Plasma processing equipment
JP2017004665A (en) 2015-06-08 2017-01-05 東京エレクトロン株式会社 Plasma processing apparatus

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4795879A (en) * 1987-04-13 1989-01-03 The United States Of America As Represented By The United States Department Of Energy Method of processing materials using an inductively coupled plasma
JPH1055983A (en) * 1996-03-12 1998-02-24 Varian Assoc Inc Inductively coupled plasma reactor having faraday sputter shield
US20140342568A1 (en) * 2013-05-16 2014-11-20 Lam Research Corporation Controlling temperature of a faraday shield
US20180374685A1 (en) * 2017-06-22 2018-12-27 Applied Materials, Inc. Plasma reactor with electrode array in ceiling

Also Published As

Publication number Publication date
JP7232410B2 (en) 2023-03-03
KR20210129179A (en) 2021-10-27
CN113632592A (en) 2021-11-09
WO2020188809A1 (en) 2020-09-24

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