JP2023114390A - Sputtering device - Google Patents

Abstract

To provide a sputtering device that can increase plasma density in the vicinity of a target.SOLUTION: A sputtering device (1) includes: a target (Tr) disposed inside a vacuum vessel (2), having an opposite face (Tr1) that faces a target material (H1) to be placed on a stage (H); a high frequency window (11) that includes a metal plate (12) with a slit (12a) and a dielectric (13), allows a high frequency magnetic field to be introduced into the vacuum vessel (2) so as to generate plasma inside the vacuum vessel (2), and is provided at a wall surface of the vacuum vessel (2); and a linear antenna (14) that is disposed outside the vacuum vessel (2) and near the high frequency window (11) and generates a high frequency magnetic field. The high frequency window (11) is disposed so that the inside principal face of the vacuum vessel (2) inclines from a face parallel with the opposite face (Tr1) toward the target (Tr).SELECTED DRAWING: Figure 2

Description

The present disclosure relates to sputtering apparatus.

The sputtering apparatus includes a vacuum vessel containing an object to be processed and a target arranged to face the object to be processed, and uses plasma to sputter the target to form a coating on the object to be processed. As such a sputtering apparatus, there is known one in which a dielectric housing and a Faraday shield used as a high-frequency window for passing a high-frequency magnetic field, and an antenna for generating a high-frequency magnetic field are arranged.

JP 2012-253313 A

It is difficult to increase the plasma density in the vicinity of the target in the sputtering apparatus having the antenna outside the vacuum vessel as described above. In a sputtering apparatus in which an antenna is provided outside a vacuum vessel, it is desired to be able to increase the plasma density in the vicinity of the target more efficiently.

The present disclosure has been made in view of the above problems, and an object thereof is to provide a sputtering apparatus capable of increasing the plasma density in the vicinity of the target.

In order to solve the above problems, a sputtering apparatus according to one aspect of the present disclosure includes a vacuum vessel that houses a stage for placing an object to be processed, and a vacuum vessel that faces the object to be processed placed on the stage. a target disposed inside the vacuum vessel, and a wall surface of the vacuum vessel for introducing a high-frequency magnetic field into the interior of the vacuum vessel to generate plasma inside the vacuum vessel. a high-frequency window provided, the high-frequency window having a metal plate having a slit and a dielectric superimposed on the metal plate; and a linear antenna for generating a magnetic field, wherein the high-frequency window is arranged such that the main surface on the inner side of the vacuum vessel is inclined from a plane parallel to the facing surface toward the target.

According to one aspect of the present disclosure, it is possible to provide a sputtering apparatus capable of increasing plasma density in the vicinity of a target.

1 is a plan view of a sputtering apparatus according to Embodiment 1 of the present disclosure; FIG. FIG. 2 is a cross-sectional view of the main structure of the sputtering apparatus as viewed from the side; FIG. 5 is a diagram showing an example of measurement results of plasma density and film thickness with respect to distance from the center of the target in the product of the present embodiment; It is a figure explaining the principal part composition of the sputtering device concerning Embodiment 2 of this indication. FIG. 10 is a diagram for explaining the main configuration of Comparative Example 1; FIG. 5 is a diagram showing an example of measurement results of the ratio of the plasma density to the power output with respect to the attachment angle of the high-frequency window in each of the product of the present embodiment and Comparative Example 1; 5 is a diagram showing an example of measurement results of plasma density with respect to the distance from the target center in each of the product of the present embodiment and Comparative Example 1. FIG. 5 is a diagram showing an example of measurement results of the plasma density ratio with respect to the installation angle of the high frequency window in each of the product of the present embodiment and Comparative Example 1. FIG. FIG. 10 is a diagram illustrating a main configuration of a sputtering apparatus according to Embodiment 3 of the present disclosure; FIG. 10 is a diagram illustrating a main configuration of a sputtering apparatus according to Embodiment 4 of the present disclosure;

[Embodiment 1]
Hereinafter, Embodiment 1 of the present disclosure will be described in detail with reference to FIGS. 1 and 2. FIG. FIG. 1 is a plan view of a sputtering apparatus 1 according to Embodiment 1 of the present disclosure. FIG. 2 is a cross-sectional view of the main structure of the sputtering apparatus 1 as viewed from the side.

<Sputtering device 1>
As shown in FIGS. 1 and 2, the sputtering apparatus 1 of the present embodiment is provided with a vacuum vessel 2 and a vacuum vessel 2 detachable therefrom. a target holder 3; The sputtering apparatus 1 of this embodiment also includes a plasma source 10 that generates plasma inside the vacuum vessel 2 . The vacuum vessel 2 accommodates an object to be processed H1 and a stage H for mounting the object to be processed H1.

In the vacuum vessel 2, the workpiece H1 and the stage H are carried in and out between the vacuum vessel 2 and the outside by a transfer device (not shown). The plasma source 10 is a source of an electromagnetic field for generating plasma inside the vacuum vessel 2 (details will be described later). In FIG. 2, the direction in which the workpiece H1 and the target Tr face each other is the vertical direction of the vacuum vessel 2, and the target Tr is provided on the upper ceiling surface of the vacuum vessel 2, for example.

Inside the vacuum vessel 2, while a predetermined degree of vacuum is maintained, the target Tr is sputtered using plasma to form a coating film on the object H1 to be processed. . The object H1 to be processed can be, for example, a glass substrate or a synthetic resin substrate used for a liquid crystal panel display, an organic EL (Electro Luminescence) panel display, or the like. Moreover, the object to be processed H1 may be a semiconductor substrate used for various purposes. The sputtering device 1 forms a predetermined film of an oxide semiconductor, a magnetic material, or the like on the object to be processed H1 by the film formation process described above.

A gas supply mechanism (not shown) is connected to the vacuum vessel 2, and inert gas such as argon gas is supplied into the vacuum vessel 2 by the gas supply mechanism. The sputtering apparatus 1 is configured to perform the predetermined film forming process in an inert gas atmosphere.

The target holder 3 includes a target holder main body 3 a , a rectangular insulating flange 5 provided on the outer peripheral portion of the target holder main body 3 a to airtightly attach the target holder main body 3 a to the vacuum vessel 2 , and a backing plate 6 . A backing plate 6 provided in an insulating flange 5 for cooling the target Tr is attached to the target holder main body 3a.

The backing plate 6 is configured to appropriately hold the target Tr according to the film forming process. The backing plate 6 includes, for example, an inlet 6a and an outlet 6b through which a cooling medium such as cooling water flows in and out, respectively, and a channel 6c communicating with the inlet 6a and the outlet 6b. . A target Tr is adhered to the lower surface of the backing plate 6, for example.

<Target holder 3>
The target holder 3 holds the target Tr so that the opposing surface (principal surface) Tr1 of the target Tr is parallel to and faces the film-forming surface of the workpiece H1 during the film formation process. . Further, the target holder 3 is provided with a ground electrode (anode electrode) 7 covering the surface of the target Tr with a gap therebetween in order to prevent abnormal discharge at the end of the target Tr. This ground electrode 7 is electrically connected to the vacuum vessel 2 and grounded via the vacuum vessel 2 .

A power supply 8 is connected to the target Tr through a backing plate 6, and a pulsed DC voltage or AC voltage is applied from the power supply 8 as a bias voltage to the target Tr during the film formation process. It's like This bias voltage is a voltage that draws ions (eg, argon ions (Ar ⁺ )) in the plasma inside the vacuum chamber 2 to the target Tr for sputtering. is set.

<Configuration of Plasma Source 10>
The plasma source 10 comprises a radio frequency window 11 through which a radio frequency magnetic field is introduced inside the vacuum vessel 2 in order to generate a plasma inside the vacuum vessel 2 . The plasma source 10 is arranged outside the vacuum vessel 2 and close to the high-frequency window 11, and has a linear antenna 14 for generating the high-frequency magnetic field.

<High frequency window 11>
The high-frequency window 11 includes a metal plate 12 having a slit 12a and a dielectric 13 superimposed on the metal plate 12, and is provided on the wall surface of the vacuum vessel 2 to which the target Tr is attached. That is, in the high-frequency window 11, as shown in FIG. 2, the metal plate 12 provided on the inner side of the vacuum vessel 2 with respect to the dielectric 13 is arranged in a state of overlapping with the dielectric 13. As shown in FIG. Moreover, the high-frequency window 11 is attached to the wall surface (the ceiling surface of the vacuum vessel 2 ), that is, the side surface of the vacuum vessel 2 , which is continuously provided to the wall surface (the ceiling surface of the vacuum vessel 2 ) to which the target Tr is attached.

The high-frequency window 11 is configured, for example, in a flat plate shape. In this high-frequency window 11, as shown in FIG. 2, a metal plate 12 is provided on the side surface (wall surface) of the vacuum vessel 2. Moreover, the high frequency window 11 is inclined with respect to the facing surface Tr1. In other words, the high-frequency window 11 is arranged such that the main surface on the inner side of the vacuum vessel 2 is inclined from a plane parallel to the opposing surface Tr1 toward the target Tr.

Specifically, the high-frequency window 11 is provided on the wall surface so that the opening surface of the slit 12a on the inner side of the vacuum vessel 2 is inclined below the target Tr with respect to a plane parallel to the facing surface Tr1 of the target Tr. It is The angle between the main surface of the high-frequency window 11 facing the inside of the vacuum vessel 2 and the surface parallel to the facing surface Tr1 of the target Tr is an angle θ1 (FIG. 2). The angle θ1 is hereinafter also referred to as the attachment angle of the high-frequency window 11 .

Specifically, in the sputtering apparatus 1 of the present disclosure, an angle within the range of 90 degrees or more and 120 degrees or less is set as the angle θ1. Thereby, in the present disclosure, as will be described in detail later, it is possible to easily configure a compact sputtering apparatus 1 that can reliably increase the plasma density in the vicinity of the target Tr.

Specifically, in the sputtering apparatus 1 of the present embodiment, the angle (mounting angle of the high frequency window 11) θ1 between the main surface of the high frequency window 11 and the plane parallel to the facing surface Tr1 of the target Tr is set to 120 degrees.

<Metal plate 12>
The metal plate 12 is, for example, one metal selected from the group containing copper, aluminum, zinc, nickel, tin, silicon, titanium, iron, chromium, niobium, carbon, molybdenum, tungsten, or cobalt, or any of these metals. Constructed using an alloy. The metal plate 12 has a thickness of, for example, approximately 1 mm to 5 mm.

A plurality of slits 12a are formed in the metal plate 12 at predetermined intervals along the longitudinal direction of the antenna 14, as shown in FIG. Also, the metal plate 12 is grounded via the vacuum vessel 2 . Thus, the metal plate 12 is configured to transmit the high-frequency magnetic field generated by the antenna 14 into the interior of the vacuum vessel 2 and prevent the electric field generated by the antenna 14 from entering the interior of the vacuum vessel 2 . ing.

<Dielectric 13>
The dielectric 13 is made of, for example, a synthetic resin film such as fluororesin having a thickness of about 1 mm to 5 mm. Further, the dielectric 13 is configured to block the plurality of slits 12a when superimposed on the metal plate 12. As shown in FIG. In the high-frequency window 11 , the vacuum state inside the vacuum container 2 can be maintained by the dielectric 13 .

In addition to the above description, the dielectric 13 may be a magnetically permeable material, for example, ceramic materials such as alumina, silicon carbide, and silicon nitride, or inorganic materials such as quartz glass and alkali-free glass. may The dielectric 13 preferably has a low dielectric loss tangent, and more specifically, preferably has a dielectric loss tangent of 0.001 or less under high frequency heating. Further, when the dielectric 13 is made of a material having a dielectric loss tangent of 0.001 or more, it is preferable to appropriately set the distance between the metal plate 12 and the antenna 14 .

In addition to the above description, the dielectric 13 may be airtightly provided on the wall surface of the vacuum vessel 2 and the metal plate 12 may be provided on the antenna 14 side of the dielectric 13 . In this case, the metal plate 12 may be configured as a Faraday shield by, for example, grounding through the vacuum vessel 2, so that the electric field generated by the antenna 14 enters the interior of the vacuum vessel 2. It is preferable in that it can prevent the

<Antenna 14>
The antenna 14 is made of, for example, a pipe-shaped metal material (eg, copper, aluminum, alloys thereof, stainless steel, etc.). A high-frequency power source 15 (not shown) is connected to one end of the antenna 14, and the other end of the antenna 14 is grounded. A high-frequency current having a frequency of 13.56 MHz, for example, is supplied to the antenna 14 from the high-frequency power supply 15 . In the sputtering apparatus 1, a high-frequency current flows through the antenna 14, so that an induced electric field is generated in the vacuum vessel 2 and an inductively coupled plasma P is generated.

Further, inside the antenna 14, a flow path is formed through which a cooling medium (for example, cooling water) for cooling the antenna 14 flows. It should be noted that the metal material described above is preferably coated with a low-resistance metal or alloy with a thickness equal to or greater than the skin thickness.

<effect>
The sputtering apparatus 1 of the present embodiment configured as described above has a facing surface Tr1 facing the workpiece H1 placed on the stage H, and has a target Tr disposed inside the vacuum vessel 2. Prepare. Moreover, the sputtering apparatus 1 of this embodiment includes a metal plate 12 having a slit 12a and a dielectric 13, and introduces a high-frequency magnetic field into the interior of the vacuum vessel 2 in order to generate plasma within the vacuum vessel 2. In addition, a high frequency window 11 provided on the wall surface of the vacuum vessel 2 is provided. The sputtering apparatus 1 of the present embodiment also includes a linear antenna 14 that is arranged in the vicinity of the high-frequency window 11 outside the vacuum vessel 2 and that generates a high-frequency magnetic field.

Further, in the sputtering apparatus 1 of the present embodiment, the high-frequency window 11 is arranged such that the main surface on the inner side of the vacuum vessel 2 is inclined from a plane parallel to the facing surface Tr1 toward the target Tr. Thereby, in this embodiment, it is possible to provide the sputtering apparatus 1 capable of increasing the plasma density in the vicinity of the target Tr.

Further, in the sputtering apparatus 1 of the present embodiment, the metal plate 12 is provided on the wall surface of the vacuum vessel 2 in the high-frequency window 11 so as to be on the inner side of the vacuum vessel 2 with respect to the dielectric 13 . Thereby, in the sputtering apparatus 1 of the present embodiment, the high-frequency window 11 can be easily provided on the wall surface of the vacuum vessel 2 as compared with the case where the dielectric 13 is located inside the vacuum vessel 2 .

<Example of test results>
Here, with reference also to FIG. 3, specific effects of the sputtering apparatus 1 of the present embodiment will be described. FIG. 3 is a diagram showing an example of measurement results of plasma density and film thickness with respect to the distance from the center of the target in the product of this embodiment. The vertical axis in FIG. 3 is plasma density or film thickness. More specifically, the vertical axis of FIG. 3 is the relative ratio of the plasma density to the maximum value in the plasma density distribution. Alternatively, the vertical axis in FIG. 3 is the relative ratio of the film thickness to the maximum value in the film thickness distribution. The horizontal axis in FIG. 3 indicates the distance from the center of the target (the distance from the center of the target Tr in the horizontal direction in FIG. 2).

As shown by the curve 50 in FIG. 3, in the product of the present embodiment, when the maximum value of the plasma density inside the vacuum vessel 2 is 1, the value of the relative ratio of the plasma density increases as the center of the target Tr is approached. becomes smaller. However, it was confirmed that even the center of the target Tr does not have a zero value. That is, in the product of this embodiment, even at the center of the target Tr far away from the high-frequency window 11, the value of the relative ratio of the plasma densities exceeds zero, confirming that the plasma density can be increased.

It should be noted that this plasma density is the measurement result shown at the evaluation position P1 in FIG. 2 below the target Tr. Also, this evaluation position P1 is a position below by a distance (for example, 38 mm) indicated by L1 in FIG. 2 in the direction from the facing surface Tr1 of the target Tr to the workpiece H1.

Specifically, when the angle θ1 is 120 degrees, for example, at the evaluation position P1, the plasma density at the center of the target Tr can be 0.5×10 ¹⁶ (m ⁻³ ) or more. confirmed. Further, when the angle θ1 is 90 degrees, for example, it was confirmed that the plasma density at the center of the target Tr is 1.5×10 ¹⁷ (m ⁻³ ) or more at the evaluation position P1.

Also, the film thickness distribution of the film formed on the object H1 to be processed has a shape shown by the curve 51 in FIG. This film thickness distribution substantially matches the shape of the model based on the COS law, shown by curve 40 in FIG. Confirmed. That is, even when the high-frequency window 11 is inclined toward the surface Tr1 facing the target Tr as in the present embodiment, the object H1 is appropriately subjected to the film formation process without adverse effects of the inclination. It was demonstrated that the film can be formed.

[Embodiment 2]
Embodiment 2 of the present disclosure will be specifically described with reference to FIG. FIG. 4 is a diagram illustrating the main configuration of the sputtering apparatus 1 according to Embodiment 2 of the present disclosure. For convenience of description, members having the same functions as those of the members described in the above embodiments are denoted by the same reference numerals, and description thereof will not be repeated.

The main difference between the second embodiment and the first embodiment is that the angle (mounting angle of the high frequency window 11) θ1 between the main surface of the high frequency window 11 and the plane parallel to the facing surface Tr1 of the target Tr is set to 90 This is the point.

In the sputtering apparatus 1 of Embodiment 2, as shown in FIG. 4, the high-frequency window 11 is provided on the wall surface of the vacuum vessel 2 so that the angle θ1 is 90 degrees.

With the above configuration, the sputtering apparatus 1 of the second embodiment has the same effects as those of the first embodiment.

<Example of test results>
Here, specific effects of the sputtering apparatuses 1 of the first and second embodiments will be described with reference to FIGS. 5 to 8 as well. FIG. 5 is a diagram for explaining the main configuration of Comparative Example 1. As shown in FIG. FIG. 6 is a diagram showing an example of measurement results of the ratio of the plasma density to the power output with respect to the installation angle of the high-frequency window 11 in each of the product of the present embodiment and Comparative Example 1. In FIG. FIG. 7 is a diagram showing an example of measurement results of plasma density with respect to the distance from the target center in each of the product of the present embodiment and Comparative Example 1. In FIG. FIG. 8 is a diagram showing an example of measurement results of the plasma density ratio with respect to the installation angle of the high-frequency window 11 in each of the product of the present embodiment and Comparative Example 1. In FIG.

In FIG. 5, Comparative Example 1 includes a target holder 103 having a target Tr and a cooling mechanism 106 for cooling the target Tr, and attached to a vacuum vessel 102 . Comparative Example 1 has a flat metal plate 112 having a slit 112a, a dielectric 113 provided on the metal plate 112 below the antenna 114, and a high frequency window 111 attached to the vacuum vessel 102. ing. In Comparative Example 1, unlike the product 1 of the present embodiment shown in FIG. 2 or the product 2 of the present embodiment shown in FIG. 4, as shown in FIG. It is provided on the wall surface of the vacuum vessel 102 so that That is, in Comparative Example 1, the angle corresponding to the angle θ1 is 180 degrees.

In FIG. 6, points H1, J1, and J2 indicate the measurement results of the ratio of plasma density to power output in Comparative Example 1, Embodiment 1, and Embodiment 2, respectively. there is The vertical axis of FIG. 6 indicates the value of plasma density/high frequency power as a ratio of the plasma density to the power output, and the horizontal axis of FIG. 6 indicates the mounting angle of the high frequency window 11 .

In the product 1 of the present embodiment, the plasma density is measured at the evaluation position P1 shown in FIG. In the second embodiment, the plasma density measurement position is the evaluation position P2 shown in FIG. 4, and the distance between the facing surface Tr1 of the target Tr and the evaluation position P2 indicated by L2 in FIG. For example, 38 mm. Further, in Comparative Example 1, the plasma density measurement position is the evaluation position P3 shown in FIG. , 22 mm.

As is clear from points H1, J1, and J2, the products 1 and 2 of the present embodiment can significantly increase the plasma density in the vicinity of the target Tr compared to Comparative Example 1. Proven.

If the angle θ1 exceeds 120 degrees, it becomes difficult to significantly increase the plasma density in the vicinity of the target Tr. On the other hand, if the angle θ1 is less than 90 degrees, the high-frequency window will be inclined toward the inside of the vacuum vessel, requiring an increase in the size of the vacuum vessel and, in turn, the sputtering apparatus. It requires miniaturization of things.

In other words, as in the products 1 and 2 of the present embodiment, by setting the angle θ1 to 90 degrees or more and 120 degrees or less, the compact sputtering apparatus can reliably increase the plasma density in the vicinity of the target Tr. 1 can be easily constructed.

Further, as shown by black squares in FIG. 7, when the maximum value of the plasma density inside the vacuum vessel 102 is 1, in Comparative Example 1, the plasma density increases as the center of the target Tr is approached. The value of the relative ratio becomes significantly smaller. Then, the value becomes almost zero until reaching the center of the target Tr. The vertical axis in FIG. 7 indicates the plasma density, and the horizontal axis in FIG. 7 indicates, for example, the distance from the center of the target.

On the other hand, in the product 1 of the present embodiment, as shown by the black circle in FIG. 7, when the maximum plasma density inside the vacuum vessel 2 is 1, the plasma becomes The value of the relative ratio of densities becomes smaller. However, even the center of the target Tr does not have a zero value. Further, in the product 1 of the present embodiment, the value of the relative ratio of the plasma densities is almost zero at a position passing the end of the target Tr opposite to the plasma source 10, for example, at a position 100 mm from the center of the target Tr. becomes.

In the product 2 of the present embodiment, as shown by black triangles in FIG. 7, when the maximum value of the plasma density inside the vacuum vessel 2 is 1, the plasma becomes The value of the relative ratio of densities becomes smaller. However, even the center of the target Tr does not have a zero value. Moreover, in the product 2 of the present embodiment, the value of the relative ratio of the plasma density is almost zero at a position passing the end of the target Tr opposite to the plasma source 10, for example, at a position 105 mm from the center of the target Tr. becomes.

Furthermore, in the product 2 of the present embodiment, it was confirmed that the value of the relative ratio of the plasma densities has a smaller decreasing rate in the direction toward the center of the target Tr than the product 1 of the present embodiment. That is, it was confirmed that the product 2 of the present embodiment can make the distribution of the plasma density in the vicinity of the target Tr more uniform and appropriate than the product 1 of the present embodiment, and that the plasma density can be further increased.

FIG. 8 shows relative ratio values of plasma densities at different distances from the center of the target Tr in Comparative Example 1, the product 1 of the present embodiment, and the product 2 of the present embodiment. The vertical axis in FIG. 8 indicates the plasma density ratio (the value of the relative ratio of plasma density to the maximum value of plasma density), and the horizontal axis in FIG.

The value of the relative ratio of the plasma densities was measured as indicated by a straight line 81 in FIG. 8 at a position 60 mm from the center of the target Tr in the direction of approaching the plasma source. That is, at the position of 60 mm on the plasma source side, the value of the relative ratio of the plasma density is the black triangle 1 indicating the measurement result of the product 2 of the present embodiment, and the black triangle indicating the measurement result of the product 1 of the present embodiment. 2, and black triangle 3 indicating the measurement results of Comparative Example 1. Furthermore, it was demonstrated that the plasma density near the target Tr of Comparative Example 1 was the lowest.

Further, the value of the relative ratio of the plasma densities was the measurement result indicated by the straight line 82 in FIG. 8 at the center position of the target Tr. That is, at the center position, the values of the relative ratio of the plasma densities are the black circle 1 indicating the measurement result of the product 2 of the present embodiment, the black circle 2 indicating the measurement result of the product 1 of the present embodiment, and It becomes lower in the order of black circle 3 showing the measurement result of Comparative Example 1. Furthermore, it was demonstrated that the plasma density near the target Tr of Comparative Example 1 was the lowest.

The value of the relative ratio of the plasma densities was the measurement result indicated by the straight line 83 in FIG. 8 at a position of, for example, 60 mm from the center of the target Tr in the direction away from the plasma source. That is, at a position 60 mm away from the plasma source, the values of the relative ratio of the plasma densities are the black rectangle 1 indicating the measurement results of the product 2 of the present embodiment, and the black rectangle 1 indicating the measurement results of the product 1 of the present embodiment. The filled square 2 and the black square 3 showing the measurement result of Comparative Example 1 are lower in order. Furthermore, it was demonstrated that the plasma density near the target Tr of Comparative Example 1 was the lowest.

As described above, it was demonstrated that the products 1 and 2 of the present embodiment can increase the plasma density in the vicinity of the target Tr as compared with the first comparative example.

[Embodiment 3]
Embodiment 3 of the present disclosure will be specifically described with reference to FIG. 9 . FIG. 9 is a diagram illustrating the main configuration of the sputtering apparatus 1 according to Embodiment 3 of the present disclosure. For convenience of description, members having the same functions as those of the members described in the above embodiments are denoted by the same reference numerals, and description thereof will not be repeated.

The main difference between the third embodiment and the second embodiment is that a plurality of high-frequency windows 11 are provided on a plurality of wall surfaces of the vacuum vessel 2, and a plurality of The point is that the antenna 14 is provided.

In the sputtering apparatus 1 of Embodiment 3, as shown in FIG. 9, a plurality, for example, two plasma sources 10 are provided on two wall surfaces (side surfaces) of the vacuum chamber 2 facing each other. In each plasma source 10, as in the case of the second embodiment, the high frequency window 11 is provided on the wall surface of the vacuum chamber 2 so that the angle .theta.1 is 90 degrees. That is, in the sputtering apparatus 1 of Embodiment 3, two high-frequency windows 11 and two antennas 14 are installed so as to sandwich the target Tr.

With the above configuration, in the sputtering apparatus 1 of Embodiment 3, the two high-frequency windows 11 and the two antennas 14 are installed so as to sandwich the facing surface Tr1 of the target Tr. , the plasma density in the vicinity of the target Tr can be made higher.

[Embodiment 4]
Embodiment 4 of the present disclosure will be specifically described with reference to FIG. 10 . FIG. 10 is a diagram illustrating the main configuration of the sputtering apparatus 1 according to Embodiment 4 of the present disclosure. For convenience of description, members having the same functions as those of the members described in the above embodiments are denoted by the same reference numerals, and description thereof will not be repeated.

The main difference between the fourth embodiment and the third embodiment is that the wall surface of the vacuum vessel 2 is provided with a ceiling surface on which the target Tr is provided, and a projecting surface 2a projecting from the ceiling surface toward the inside of the vacuum vessel 2. Also, the high-frequency window 11 is provided on the projecting surface 2a.

In the sputtering apparatus 1 of Embodiment 4, as shown in FIG. 10, the high-frequency windows 11 of each of a plurality of, for example, four plasma sources 10 protrude from the ceiling surface on which the target Tr is attached to the inside of the vacuum vessel 2. It is provided on the projecting surface 2a. In the sputtering apparatus 1 of Embodiment 4, the high-frequency window 11 is provided so as to protrude from the ceiling surface by attaching the metal plate 12 of each plasma source 10 to the projecting surface 2a.

Further, in the sputtering apparatus 1 of Embodiment 4, one antenna 14 is arranged between the two high frequency windows 11 so as to be close to the two high frequency windows 11 . Specifically, the antenna 14 is arranged at an intermediate position between the two high-frequency windows 11 , and each of the two high-frequency windows 11 generates plasma against the target Tr near the high-frequency window 11 .

With the above configuration, in the sputtering apparatus 1 of Embodiment 4, the vacuum vessel 2 has a ceiling surface on which the target Tr is provided, and a projecting surface 2a projecting from the ceiling surface toward the inside of the vacuum vessel 2. ing. The high frequency window 11 is provided on the projecting surface 2a. As a result, in the sputtering apparatus 1 of Embodiment 4, the high-frequency window 11 can be provided closer to the target Tr than in Embodiment 3, and the plasma density in the vicinity of the target Tr can be easily increased. can be higher.

Further, in the sputtering apparatus 1 of Embodiment 4, one antenna 14 is arranged between the two high-frequency windows 11 so as to be close to the two high-frequency windows 11. Therefore, for the two high-frequency windows 11, It becomes possible to share one antenna 14 . As a result, in the fourth embodiment, even when two high-frequency windows 11 are provided, it is possible to prevent the sputtering apparatus 1 from increasing in size.

Furthermore, in the sputtering apparatus 1 of Embodiment 4, a plurality of, for example, two high-frequency windows 11 sharing one antenna 14 are provided on the projecting surface 2a projecting inside. As a result, in the sputtering apparatus 1 of the third embodiment, it is possible to easily form a film on the large workpiece H1 using plasma, as compared with the third embodiment.

〔summary〕
In order to solve the above problems, a sputtering apparatus according to one aspect of the present disclosure includes a vacuum vessel that houses a stage for placing an object to be processed, and a vacuum vessel that faces the object to be processed placed on the stage. a target disposed inside the vacuum vessel, and a wall surface of the vacuum vessel for introducing a high-frequency magnetic field into the interior of the vacuum vessel to generate plasma inside the vacuum vessel. a high-frequency window provided, the high-frequency window having a metal plate having a slit and a dielectric superimposed on the metal plate; and a linear antenna for generating a magnetic field, wherein the high-frequency window is arranged such that the main surface on the inner side of the vacuum vessel is inclined from a plane parallel to the facing surface toward the target.

According to the above configuration, it is possible to provide a sputtering apparatus capable of increasing the plasma density in the vicinity of the target.

In the sputtering apparatus according to one aspect described above, an angle formed by the main surface and a surface parallel to the facing surface may be 90 degrees or more and 120 degrees or less.

According to the above configuration, it is possible to easily configure a compact sputtering apparatus that can reliably increase the plasma density in the vicinity of the target.

The sputtering apparatus according to the one aspect described above may include a plurality of the high-frequency windows and a plurality of the antennas arranged close to each of the high-frequency windows.

According to the above configuration, since a plurality of high-frequency windows and a plurality of antennas are provided, the plasma density in the vicinity of the target can be further increased.

In the sputtering apparatus according to the above aspect, the front wall surface has a ceiling surface on which the target is provided and a projecting surface projecting from the ceiling surface toward the inside of the vacuum vessel, and the high-frequency window has the projecting surface. may be provided on the surface.

According to the above configuration, the high-frequency window can be provided closer to the target, and the plasma density in the vicinity of the target can be easily increased.

In the sputtering apparatus according to one aspect, one antenna may be arranged between the two high-frequency windows so as to be close to the two high-frequency windows.

According to the above configuration, it is possible to share the antenna for two high-frequency windows, and even when two high-frequency windows are provided, it is possible to suppress an increase in the size of the plasma source and, in turn, the sputtering apparatus.

In the sputtering apparatus according to one aspect, the metal plate may be provided closer to the inside of the vacuum vessel than the dielectric in the high-frequency window.

According to the above configuration, the high-frequency window can be easily provided on the wall surface of the vacuum vessel as compared with the case where the dielectric is on the vacuum vessel side.

The present disclosure is not limited to each embodiment described above, various modifications are possible within the scope shown in the claims, and embodiments obtained by appropriately combining technical means disclosed in different embodiments are also included in the technical scope of the present disclosure.

REFERENCE SIGNS LIST 1 sputtering device 2 vacuum vessel 2a projecting surface 11 high-frequency window 12 metal plate 12a slit 13 dielectric 14 antenna H stage H1 workpiece Tr target Tr1 opposing surface

Claims (6)

a vacuum vessel that houses a stage for placing an object to be processed;
a target having a surface facing an object to be processed placed on the stage and arranged inside the vacuum vessel;
A high-frequency window provided on a wall surface of the vacuum vessel for introducing a high-frequency magnetic field into the interior of the vacuum vessel in order to generate plasma inside the vacuum vessel, comprising: a metal plate having a slit; a high frequency window having an overlapping dielectric;
a linear antenna disposed outside the vacuum vessel and close to the high-frequency window and generating the high-frequency magnetic field;
A sputtering apparatus according to claim 1, wherein the high-frequency window is arranged such that the main surface on the inner side of the vacuum vessel is inclined toward the target from a plane parallel to the opposing surface. 2. The sputtering apparatus according to claim 1, wherein an angle formed by said main surface and a surface parallel to said facing surface is 90 degrees or more and 120 degrees or less. 3. The sputtering apparatus according to claim 1, comprising a plurality of said high frequency windows and a plurality of said antennas arranged close to each of said high frequency windows. The wall surface has a ceiling surface on which the target is provided and a projecting surface projecting from the ceiling surface toward the inside of the vacuum vessel,
4. The sputtering apparatus according to any one of claims 1 to 3, wherein said high frequency window is provided on said projecting surface. 5. The sputtering apparatus according to any one of claims 1 to 4, wherein one said antenna is arranged between said plurality of high frequency windows so as to be close to said two said high frequency windows. 6. The sputtering apparatus according to any one of claims 1 to 5, wherein in said high-frequency window, said metal plate is provided closer to the inside of said vacuum vessel than said dielectric.

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