JP2023113083A - Sputtering device - Google Patents

Abstract

To provide a sputtering device that can increase plasma density in the vicinity of a target.SOLUTION: A sputtering device (1) includes: a target (Tr) disposed inside a vacuum vessel (2) so that it faces a target material (H1) to be placed on a stage (H); a high frequency window (11) that includes a metal plate (12) with a slit (12s) and a dielectric (13), allows a high frequency magnetic field to be introduced into the vacuum vessel (2) so as to generate plasma inside the vacuum vessel (2), and is provided at a wall surface of the vacuum vessel (2) having the target (Tr) mounted thereon; and a linear antenna (14) that is disposed outside the vacuum vessel (2) and near the high frequency window (11) and generates a high frequency magnetic field. The high frequency window (11) includes a semi-cylindrical part (11a) with its axis being parallel with the wall surface.SELECTED DRAWING: Figure 2

Description

The present disclosure relates to sputtering apparatus.

The sputtering apparatus includes a vacuum vessel containing an object to be processed and a target arranged to face the object to be processed, and uses plasma to sputter the target to form a coating on the object to be processed. As such a sputtering apparatus, there is known one in which a dielectric housing and a Faraday shield used as a high-frequency window for passing a high-frequency magnetic field, and an antenna for generating a high-frequency magnetic field are arranged.

JP 2012-253313 A

It is difficult to increase the plasma density in the vicinity of the target in the sputtering apparatus having the antenna outside the vacuum vessel as described above. In a sputtering apparatus in which an antenna is provided outside a vacuum vessel, it is desired to be able to increase the plasma density in the vicinity of the target more efficiently.

The present disclosure has been made in view of the above problems, and an object thereof is to provide a sputtering apparatus capable of increasing the plasma density in the vicinity of the target.

In order to solve the above problems, a sputtering apparatus according to one aspect of the present disclosure includes a vacuum vessel that houses a stage for placing an object to be processed, and a vacuum vessel that faces the object to be processed placed on the stage. a target disposed inside the vacuum vessel, a metal plate having a slit, and a dielectric superimposed on the metal plate to generate a plasma inside the vacuum vessel, and a high-frequency magnetic field is applied to A high-frequency window is introduced into the vacuum vessel and provided on the wall surface of the vacuum vessel to which the target is attached, and the high-frequency magnetic field is arranged outside the vacuum vessel and close to the high-frequency window. and a linear antenna for generating the high-frequency window, the high-frequency window having a semi-cylindrical portion with an axis parallel to the wall surface.

According to one aspect of the present disclosure, it is possible to provide a sputtering apparatus capable of increasing plasma density in the vicinity of a target.

1 is a plan view of a sputtering apparatus according to Embodiment 1 of the present disclosure; FIG. FIG. 3 is a cross-sectional view of the configuration of the main parts of the sputtering apparatus as seen from the axial direction; FIG. 10 is a diagram for explaining the main configuration of Comparative Example 1; 5 is a diagram showing an example of measurement results of plasma density with respect to the distance from the target center in each of the product of the present embodiment and Comparative Example 1. FIG. FIG. 5 is a diagram showing an example of measurement results of the ratio of the plasma density to the power output with respect to the distance from the center of the target in each of the product of the present embodiment and Comparative Example 1; It is a figure explaining an example of the upper evaluation position and the lower evaluation position in this embodiment product. FIG. 11 is a diagram illustrating an example of an upper evaluation position and a lower evaluation position in Comparative Example 2; FIG. 8 is a diagram showing an example of measurement results of plasma density with respect to horizontal distance from the antenna in each of the product of the present embodiment and Comparative Example 2; FIG. 9 is a diagram showing an example of measurement results of the plasma density at the lower evaluation position with respect to the horizontal distance from the antenna in each of the product of the present embodiment and Comparative Example 2; FIG. 7 is a diagram illustrating a configuration example of a main part of a sputtering apparatus according to Embodiment 2 of the present disclosure; 11 is a diagram showing an example of plasma density measurement results with respect to the horizontal distance from the antenna when the angle of the sputtering apparatus shown in FIG. 10 is changed; FIG. FIG. 10 is a diagram illustrating a main configuration of a sputtering apparatus according to Embodiment 3 of the present disclosure; FIG. 10 is a diagram illustrating a main configuration of a sputtering apparatus according to Embodiment 4 of the present disclosure;

[Embodiment 1]
Hereinafter, Embodiment 1 of the present disclosure will be described in detail with reference to FIGS. 1 and 2. FIG. FIG. 1 is a plan view of a sputtering apparatus 1 according to Embodiment 1 of the present disclosure. FIG. 2 is a cross-sectional view of the main structure of the sputtering apparatus 1 as seen from the axial direction.

<Sputtering device 1>
As shown in FIGS. 1 and 2, the sputtering apparatus 1 of the present embodiment is provided with a vacuum vessel 2 and a vacuum vessel 2 detachable therefrom. a target holder 3; The sputtering apparatus 1 of this embodiment also includes a plasma source 10 that generates plasma inside the vacuum vessel 2 . The vacuum vessel 2 accommodates an object to be processed H1 and a stage H for mounting the object to be processed H1.

In the vacuum vessel 2, the workpiece H1 and the stage H are carried in and out between the vacuum vessel 2 and the outside by a transfer device (not shown). The plasma source 10 is a source of an electromagnetic field for generating plasma inside the vacuum vessel 2 (details will be described later). In FIG. 2, the direction in which the workpiece H1 and the target Tr face each other is the vertical direction of the vacuum vessel 2, and the target Tr is provided on the upper ceiling surface of the vacuum vessel 2, for example.

Inside the vacuum vessel 2, while a predetermined degree of vacuum is maintained, the target Tr is sputtered using plasma to form a coating film on the object H1 to be processed. . The object H1 to be processed can be, for example, a glass substrate or a synthetic resin substrate used for a liquid crystal panel display, an organic EL (Electro Luminescence) panel display, or the like. Moreover, the object to be processed H1 may be a semiconductor substrate used for various purposes. The sputtering device 1 forms a predetermined film of an oxide semiconductor, a magnetic material, or the like on the object to be processed H1 by the film formation process described above.

A gas supply mechanism (not shown) is connected to the vacuum vessel 2, and inert gas such as argon gas is supplied into the vacuum vessel 2 by the gas supply mechanism. The sputtering apparatus 1 is configured to perform the film forming process in an inert gas atmosphere.

<Target holder 3>
The target holder 3 includes a target holder main body 3 a , a rectangular insulating flange 5 provided on the outer peripheral portion of the target holder main body 3 a to airtightly attach the target holder main body 3 a to the vacuum vessel 2 , and a backing plate 6 . A backing plate 6 provided in an insulating flange 5 for cooling the target Tr is attached to the target holder main body 3a. The backing plate 6 is configured to appropriately hold the target Tr according to the film forming process.

The backing plate 6 includes, for example, an inlet 6a and an outlet 6b through which a cooling medium such as cooling water flows in and out, respectively, and a channel 6c communicating with the inlet 6a and the outlet 6b. . A target Tr is adhered to the lower surface of the backing plate 6, for example.

The target holder 3 holds the target Tr so that the main surface of the target Tr faces the film-forming surface of the workpiece H1 placed on the stage H in a state parallel to each other during the film formation process. hold. Further, the target holder 3 is provided with a ground electrode (anode electrode) 7 covering the surface of the target Tr with a gap therebetween in order to prevent abnormal discharge at the end of the target Tr. This ground electrode 7 is electrically connected to the vacuum vessel 2 and grounded via the vacuum vessel 2 .

A power supply 8 is connected to the target Tr through a backing plate 6, and a pulsed DC voltage or AC voltage is applied from the power supply 8 as a bias voltage to the target Tr during the film formation process. It's like This bias voltage is a voltage that draws ions (eg, argon ions (Ar ⁺ )) in the plasma inside the vacuum chamber 2 to the target Tr for sputtering. is set. In addition, as indicated by L1 in FIG. 2, the length dimension of the target Tr is, for example, 150 mm.

<Configuration of Plasma Source 10>
The plasma source 10 comprises a radio frequency window 11 through which a radio frequency magnetic field is introduced inside the vacuum vessel 2 in order to generate a plasma inside the vacuum vessel 2 . The plasma source 10 is arranged outside the vacuum vessel 2 and close to the high-frequency window 11, and includes a linear antenna 14 for generating the high-frequency magnetic field.

<High frequency window 11>
The high-frequency window 11 includes a metal plate 12 having a slit 12s and a dielectric 13 superimposed on the metal plate 12, and is provided on the wall surface of the vacuum vessel 2 to which the target Tr is attached. That is, in the high-frequency window 11, as shown in FIG. 2, the metal plate 12 provided on the inner side of the vacuum vessel 2 with respect to the dielectric 13 is arranged in a state of overlapping with the dielectric 13. As shown in FIG. The high-frequency window 11 is attached to the wall surface to which the target Tr is attached, that is, the upper surface (ceiling surface) of the vacuum chamber 2 .

The high-frequency window 11 has a semi-cylindrical portion 11a having a semi-cylindrical shape in a cross-sectional view, as shown in FIG. The semi-cylindrical portion 11a is provided such that its axis is parallel to the wall surface of the vacuum vessel 2 to which the target Tr is attached. The semi-cylindrical portion 11a is formed to have a predetermined radius of curvature (for example, 20 mm to 90 mm) around the center of curvature C1, which is the axis of the shaft.

In addition, in this embodiment, by setting the radius of curvature of the semi-cylindrical portion 11a to a value within the range of 20 mm to 90 mm, it is possible to suppress an increase in the current flowing through the antenna 14 and efficiently generate a high-frequency magnetic field. can be done. Furthermore, it is possible to suppress the distance between the target Tr and the object H1 to be processed from becoming large, and to efficiently perform the film forming process on the object H1 to be processed.

If the radius of curvature of the semi-cylindrical portion 11a is less than 20 mm, the antenna 14 approaches the metal plate 12, so an induced current is likely to occur, and the current flowing through the antenna 14 is consumed. Therefore, it becomes difficult to efficiently generate a high-frequency magnetic field. Further, when the radius of curvature of the semi-cylindrical portion 11a is set to a value exceeding 90 mm, the semi-cylindrical portion 11a protrudes greatly inside the vacuum vessel 2. As shown in FIG. For this reason, it is difficult to efficiently perform the film forming process on the object H1 to be processed without suppressing the increase in the distance between the target Tr and the object H1 to be processed.

2, the high-frequency window 11 is arranged so that the semi-cylindrical portion 11a protrudes into the interior of the vacuum vessel 2 from the wall surface. Specifically, as indicated by L2 in FIG. 2, the semi-cylindrical portion 11a is arranged to project from the inner surface of the vacuum vessel 2 into the interior of the vacuum vessel 2 from the wall surface with a dimension of, for example, 40 mm. It is

<Metal plate 12>
The metal plate 12 is, for example, one metal selected from the group containing copper, aluminum, zinc, nickel, tin, silicon, titanium, iron, chromium, niobium, carbon, molybdenum, tungsten, or cobalt, or any of these metals. Constructed using an alloy.

The metal plate 12 has a thickness of, for example, approximately 1 mm to 5 mm. The metal plate 12 includes a metal flange portion 12a attached to the wall surface of the vacuum vessel 2, and a dielectric support portion 12b formed with a plurality of slits 12s and in contact with the dielectric 13 to support the dielectric 13. Prepare.

The metal flange portion 12 a is airtightly attached to the wall surface of the vacuum vessel 2 . Thereby, the metal plate 12 is grounded via the vacuum vessel 2 . As shown in FIG. 1, the dielectric support portion 12b is provided with a plurality of slits 12s along the longitudinal direction of the antenna 14 at predetermined intervals. Thus, the metal plate 12 is configured to transmit the high-frequency magnetic field generated by the antenna 14 into the interior of the vacuum vessel 2 and prevent the electric field generated by the antenna 14 from entering the interior of the vacuum vessel 2 . ing.

In the above description, the configuration using the metal plate 12 having the metal flange portion 12a has been described, but the metal plate of the present embodiment is not limited in any way as long as it has a slit. For example, without providing the metal flange portion 12a on the metal plate, the metal plate may be attached to the wall surface by interposing a mounting member configured separately from the dielectric support portion 12b.

<Dielectric 13>
The dielectric 13 is made of, for example, a synthetic resin film such as fluororesin having a thickness of about 1 mm to 5 mm. Moreover, the dielectric 13 is configured to block the plurality of slits 12 s when superimposed on the metal plate 12 . In the high-frequency window 11 , the dielectric 13 allows the high-frequency magnetic field from the antenna 14 to pass through the interior of the vacuum vessel 2 while maintaining the vacuum state inside the vacuum vessel 2 .

In addition to the above description, the dielectric 13 may be a magnetically permeable material, for example, ceramic materials such as alumina, silicon carbide, and silicon nitride, or inorganic materials such as quartz glass and alkali-free glass. may The dielectric 13 preferably has a low dielectric loss tangent, and more specifically, preferably has a dielectric loss tangent of 0.001 or less under high frequency heating. Further, when the dielectric 13 is made of a material having a dielectric loss tangent of 0.001 or more, it is preferable to appropriately set the distance between the metal plate 12 and the antenna 14 .

<Antenna 14>
The antenna 14 is made of, for example, a pipe-shaped metal material (eg, copper, aluminum, alloys thereof, stainless steel, etc.), and is arranged close to the high-frequency window 11 inside the semi-cylindrical portion 11a. It is Further, the antenna 14 is arranged on the side closer to the target Tr inside the semi-cylindrical portion 11a. It should be noted that the metal material described above is preferably coated with a low-resistance metal or alloy with a thickness equal to or greater than the skin thickness.

That is, as shown in FIG. 2, the antenna 14 is arranged on the right side of FIG. 2, which is closer to the target Tr than the center of curvature C1 inside the semi-cylindrical portion 11a. Specifically, as indicated by L3 in FIG. 2, a vertical line passing through the center 14c of the antenna 14 and parallel to the vertical direction and the center side of the target Tr of the ground electrode 7 closer to the semi-cylindrical portion 11a is set to 50 mm, for example.

A high-frequency power supply 15 is connected to one end of the antenna 14, and the other end of the antenna 14 is grounded. A high-frequency current having a frequency of 13.56 MHz, for example, is supplied to the antenna 14 from the high-frequency power supply 15 . In the sputtering apparatus 1, a high-frequency current flows through the antenna 14, so that an induced electric field is generated in the vacuum vessel 2 and an inductively coupled plasma P is generated. Further, inside the antenna 14, a flow path is formed through which a cooling medium (for example, cooling water) for cooling the antenna 14 flows.

<effect>
The sputtering apparatus 1 of this embodiment configured as described above includes a target Tr arranged inside the vacuum vessel 2 so as to face the workpiece H1 placed on the stage H. FIG. Moreover, the sputtering apparatus 1 of this embodiment includes a metal plate 12 having a slit 12s and a dielectric 13, and introduces a high-frequency magnetic field into the interior of the vacuum vessel 2 in order to generate plasma within the vacuum vessel 2. In addition, a high-frequency window 11 is provided on the wall surface of the vacuum vessel 2 to which the target Tr is attached. The sputtering apparatus 1 of the present embodiment also includes a linear antenna 14 that is arranged in the vicinity of the high-frequency window 11 outside the vacuum vessel 2 and that generates a high-frequency magnetic field.

Further, in the sputtering apparatus 1 of this embodiment, the high frequency window 11 has a semi-cylindrical portion (11a) provided so that the axis thereof is parallel to the wall surface. Accordingly, in the sputtering apparatus 1 of the present embodiment, as shown in FIG. 2, the dielectric 13 has a semi-cylindrical shape when viewed in cross section, so that the strength of the dielectric 13 can be further increased. As a result, in the sputtering apparatus 1 of this embodiment, the film thickness of the dielectric 13 can be easily reduced, the distance between the antenna 14 and the target Tr can be reduced, and the plasma density in the vicinity of the target Tr can be increased. can do

Further, in the sputtering apparatus 1 of the present embodiment, the plasma inside the vacuum vessel 2 is emitted to the inside of the vacuum vessel 2 through the semi-cylindrical portion 11a of the high-frequency window 11, so that the plasma is directed to the target Tr. It can be applied by spreading more uniformly. As a result, the sputtering apparatus 1 of the present embodiment can efficiently perform the film forming process, and can form a film on the workpiece H1 in a short period of time.

Furthermore, in the sputtering apparatus 1 of the present embodiment, it is possible to introduce more of the high-frequency magnetic field from the semi-cylindrical portion 11a of the high-frequency window 11 in the direction of the target Tr, so that the plasma density in the vicinity of the target Tr can be further increased. .

In addition, in the sputtering apparatus 1 of the present embodiment, the high-frequency window 11 is provided with the semi-cylindrical portion 11a and the slit 12s is formed in the semi-cylindrical portion 11a. It can be made larger than the opening area of the provided slit. As a result, in the sputtering apparatus 1 of the present embodiment, active species such as oxygen ions (O ₂ ⁻ ) contained in the plasma transmitted through the slit 12s can be spread over a wider range. As a result, in the sputtering apparatus 1 of the present embodiment, even when the object H1 moves directly below the plasma source 10, the object H1 can be subjected to the film forming process.

Further, in the sputtering apparatus 1 of this embodiment, the antenna 14 is arranged on the side closer to the target Tr inside the semi-cylindrical portion 11a. Thereby, in the sputtering apparatus 1 of the present embodiment, plasma can be efficiently generated in the vicinity of the target Tr.

In addition, in the sputtering apparatus 1 of the present embodiment, the metal plate 12 has a metal flange portion 12a attached to the wall surface and slits 12s. 12b. Thus, in the sputtering apparatus 1 of this embodiment, the dielectric 13 is provided outside the vacuum vessel 2 with the semi-cylindrical metal plate 12 interposed therebetween, so that the dielectric 13 can be firmly supported.

<Example of test results>
Here, specific effects of the sputtering apparatus 1 of this embodiment will be described with reference to FIGS. 3 to 9 as well. FIG. 3 is a diagram for explaining the main configuration of Comparative Example 1. As shown in FIG. FIG. 4 is a diagram showing an example of measurement results of plasma density with respect to the distance from the target center in each of the product of the present embodiment and Comparative Example 1. In FIG. FIG. 5 is a diagram showing an example of measurement results of the ratio of the plasma density to the power output with respect to the distance from the target center in each of the product of the present embodiment and Comparative Example 1. In FIG.

FIG. 6 is a diagram for explaining an example of the upper evaluation position and the lower evaluation position in the product of this embodiment. FIG. 7 is a diagram illustrating an example of an upper evaluation position and a lower evaluation position in Comparative Example 2. FIG. FIG. 8 is a diagram showing an example of measurement results of plasma density with respect to the horizontal distance from the antenna in each of the product of the present embodiment and Comparative Example 2. In FIG. FIG. 9 is a diagram showing an example of measurement results at the lower evaluation position of the plasma density with respect to the horizontal distance from the antenna in each of the product of the present embodiment and Comparative Example 2. In FIG.

In FIG. 3, Comparative Example 1 includes a target holder 103 having a target Tr and a cooling mechanism 106 for cooling the target Tr, and attached to a vacuum vessel 102 . Comparative Example 1 has a flat metal plate 112 having a slit 112a, a dielectric 113 provided on the metal plate 112 below the antenna 114, and a high frequency window 111 attached to the vacuum vessel 102. ing.

In Comparative Example 1, unlike the product of this embodiment shown in FIG. 2, as shown in FIG. 102.

Here, in Comparative Example 1, when plasma is generated inside the vacuum vessel 102 by a high-frequency magnetic field introduced into the interior of the vacuum vessel 102 through the high-frequency window 111, the distance from the center of the target Tr indicated by C2 in FIG. Depending on the plasma density is different.

That is, assuming that the maximum value of the plasma density inside the vacuum vessel 102 is 1, in Comparative Example 1, as shown by the black squares in FIG. The value of the relative ratio becomes significantly smaller. Then, the value becomes almost zero until reaching the center of the target Tr. The vertical axis in FIG. 4 indicates the plasma density, and the horizontal axis in FIG. 4 indicates, for example, the distance from the target center indicated by C2 in FIG.

Further, in Comparative Example 1, as indicated by black squares in FIG. 5, the value of the ratio of the plasma density to the power output decreased significantly as the center of the target Tr was approached. The vertical axis of FIG. 5 indicates the value of plasma density/RF power as the value of the ratio of plasma density to power output, and the horizontal axis of FIG. 5 indicates, for example, the distance from the center of the target.

On the other hand, in the product of the present embodiment, as shown by the black circle in FIG. becomes smaller, but does not become zero even at the center of the target Tr. Further, in the product of the present embodiment, the value of the relative ratio of the plasma densities is almost zero at a position passing the end of the target Tr opposite to the plasma source 10, for example, at a position 130 mm from the center of the target Tr. Become.

In addition, in the product of the present embodiment, as shown by the black circle in FIG. It was confirmed that the ratio is small and sufficient values are exhibited even at the opposite end of the target Tr.

As described above, it was demonstrated that the plasma density in the vicinity of the target Tr can be increased in the product of the present embodiment as compared with the first comparative example.

Further, when performing the demonstration test of the product of the present embodiment, as shown in FIG. 6, plasma measurement results were detected at the upper evaluation position UP and the lower evaluation position DP. Note that the upper evaluation position UP is a position below the center 14c of the antenna 14 toward the inside of the vacuum vessel 2 by a distance L4 (for example, 17 mm). Also, the lower evaluation position DP is a position below the center 14c of the antenna 14 toward the inside of the vacuum vessel 2 by a distance L5 (for example, 92 mm).

Further, in Comparative Example 2, as shown in FIG. 7, the high frequency window including the metal plate 112 and the dielectric 113 is attached to the vacuum vessel 102 so that the slit 112a forms an angle of 120 degrees with respect to the vacuum vessel 102. is provided. In Comparative Example 2, during the demonstration test, plasma measurement results were detected at the upper evaluation position UP1 and the lower evaluation position DP1, as shown in FIG. Note that the upper evaluation position UP1 is a position below the center 114c of the antenna 114 toward the inside of the vacuum vessel 102 by a distance L6 (for example, 20 mm). Also, the lower evaluation position DP1 is a position below the center 114c of the antenna 114 toward the inside of the vacuum vessel 102 by a distance L7 (for example, 98 mm).

In the demonstration test, in Comparative Example 2, the plasma densities at the upper evaluation position UP1 and the lower evaluation position DP1 at different horizontal distances from the center 114c of the antenna 114 were obtained. Then, at the upper evaluation position UP1 and the lower evaluation position DP1, the value of the plasma density at a distance of 30 mm from the center 114c of the antenna 114 is set to 1, and the value of the relative ratio of the plasma density is obtained. is shown as plasma density. Also, the test results at the upper evaluation position UP1 and the lower evaluation position DP1 are indicated by black circles and white circles in FIG. 8, respectively.

In the demonstration test, plasma densities were obtained at the upper evaluation position UP and the lower evaluation position DP at different horizontal distances from the center 14c of the antenna 14 in the product of the present embodiment. Then, at the upper evaluation position UP and the lower evaluation position DP, the value of the plasma density at a distance of 30 mm from the center 14c of the antenna 14 is set to 1, and the value of the relative ratio of the plasma density is obtained. is shown as plasma density. Also, the test results at the upper evaluation position UP and the lower evaluation position DP are indicated by black triangles and white triangles in FIG. 8, respectively.

As is clear from FIG. 8, it was confirmed that in the product of the present embodiment, the plasma density was higher than in Comparative Example 2 at each of the upper evaluation position and the lower evaluation position. In the product of the present embodiment, when the horizontal distance from the center 14c of the antenna 14 is the same (for example, 100 mm), the difference in the test results at the upper evaluation position UP and the lower evaluation position DP is the comparative example. It was confirmed to be smaller than that of 2. The vertical axis of FIG. 8 indicates the plasma density described above, and the horizontal axis of FIG. 8 indicates the distance from the center 14c or center 114c of the antenna 14 or 114. FIG.

As described above, in the product of the present embodiment, it was demonstrated that the plasma can be more uniformly spread and applied to the target Tr as compared with the second comparative example.

Furthermore, in the product of the present embodiment, as is clear from FIG. It was confirmed to be larger than that of the evaluation position DP1. That is, in the product of the present embodiment, even when the object H1 to be processed moves directly under the plasma source 10, the film formation process can be performed appropriately, and the film can also be appropriately formed on the object H1 to be processed. Confirmed. Note that the vertical axis of FIG. 9 indicates the plasma density, which is the value of the relative ratio with the value of the plasma density at a distance of 30 mm from the center 14c or the center 114c being 1, similarly to the vertical axis of FIG. The horizontal axis of FIG. 9 indicates the distance from the center 14c or center 114c of the antenna 14 or 114. In FIG.

[Embodiment 2]
Embodiment 2 of the present disclosure will be specifically described with reference to FIG. 10 . FIG. 10 is a diagram illustrating a configuration example of main parts of the sputtering apparatus 1 according to Embodiment 2 of the present disclosure. For convenience of description, members having the same functions as those of the members described in the above embodiments are denoted by the same reference numerals, and description thereof will not be repeated.

In Embodiment 2, the arrangement of the antenna 14 is defined using a straight line parallel to the direction in which the workpiece H1 and the target Tr face each other, the center of curvature C1 of the semi-cylindrical portion 11a, and the center 14c of the antenna 14. there is

In the sputtering apparatus 1 of Embodiment 2, as shown in FIG. 10, the antenna 14 has a perpendicular line S1 passing through the center 14c of the antenna 14 and a curvature center of the semi-cylindrical portion 11a perpendicular to the extending direction of the antenna 14. It is arranged so that the angle θ formed by a straight line S2 passing through C1 and the center 14c is 30 degrees or more and 60 degrees or less.

The perpendicular line S1 is an example of a straight line parallel to the direction in which the workpiece H1 and the target Tr face each other, and the angle θ is the angle between the parallel straight line and the straight line S2.

With the above configuration, the sputtering apparatus 1 of Embodiment 2 can reliably increase the plasma density in the vicinity of the target Tr.

<Example of test results>
Here, with reference also to FIG. 11, specific effects of the sputtering apparatus 1 of the second embodiment will be described. FIG. 11 is a diagram showing an example of plasma density measurement results with respect to the horizontal distance from the antenna 14 when the angle θ in the sputtering apparatus 1 shown in FIG. 10 is changed. The vertical axis in FIG. 11 indicates the plasma density, and the horizontal axis in FIG. 11 indicates the distance from (the center of) the antenna 14 .

In FIG. 11, black circles, white squares, and white rhombuses show the angle θ of 15 degrees and 75 degrees, respectively, indicated by black triangles and white circles. It was confirmed that the plasma density was increased when the angles θ indicated were 30 degrees, 45 degrees, and 60 degrees, respectively, regardless of the horizontal distance from the antenna 14 .

That is, in the second embodiment, it was confirmed that the plasma density in the vicinity of the target Tr can be reliably increased by setting the angle θ to be 30 degrees or more and 60 degrees or less.

[Embodiment 3]
Embodiment 3 of the present disclosure will be specifically described with reference to FIG. 12 . FIG. 12 is a diagram illustrating the main configuration of the sputtering apparatus 1 according to Embodiment 3 of the present disclosure. For convenience of description, members having the same functions as those of the members described in the above embodiments are denoted by the same reference numerals, and description thereof will not be repeated.

The main difference between the third embodiment and the first embodiment is that a plurality of antennas 14 are arranged close to one high-frequency window 11 .

In the sputtering apparatus 1 of Embodiment 3, as shown in FIG. 12, two target holders 3 each holding a target Tr are attached to the vacuum vessel 2 in parallel so as to sandwich the plasma source 10 . In the plasma source 10 held between the two target holders 3 , a plurality of, for example, two antennas 14 are provided for one high frequency window 11 .

Of these two antennas 14, the one and the other antennas 14 are arranged inside the semi-cylindrical portion 11a close to the sides near the one and the other target holders 3 sandwiching the plasma source 10, respectively. The one and the other antennas 14 generate plasma for the targets Tr of the one and the other target holders 3, respectively.

A plasma source 10 having one antenna 14 is provided on the opposite side of the plasma source 10 having two antennas 14 in each of the one and the other target holders 3 . That is, in the sputtering apparatus 1 of Embodiment 3, as illustrated in FIG. 12, two target holders 3 and three plasma sources 10 are arranged linearly.

Thus, in the sputtering apparatus 1 of Embodiment 3, each target Tr is supplied with plasma from the two high-frequency windows 11 that sandwich the target Tr. As a result, in the sputtering apparatus 1 of the third embodiment, it is possible to more easily form a film on the large object H1 to be processed using plasma than in the first embodiment.

As described above, in the sputtering apparatus 1 of Embodiment 3, a plurality of antennas 14 are arranged close to one high-frequency window 11 . Thus, in the third embodiment, even when plasma is generated for a plurality of targets Tr, it is possible to easily configure a compact sputtering apparatus 1 capable of increasing the plasma density in the vicinity of each target Tr. Become.

[Embodiment 4]
Embodiment 4 of the present disclosure will be specifically described with reference to FIG. 13 . FIG. 13 is a diagram illustrating the main configuration of the sputtering apparatus 1 according to Embodiment 4 of the present disclosure. For convenience of description, members having the same functions as those of the members described in the above embodiments are denoted by the same reference numerals, and description thereof will not be repeated.

The main difference between the fourth embodiment and the first embodiment is that the dielectric flange portion 22a attached to the wall surface of the vacuum vessel 2 is configured in a semi-cylindrical shape and is in contact with the metal plate 23. The difference is that the dielectric 22 is provided with a metal plate supporting portion 22b for supporting the dielectric 23. FIG.

In the sputtering apparatus 1 of Embodiment 4, as shown in FIG. 13, the dielectric 22 is provided closer to the inside of the vacuum vessel 2 than the metal plate 23 is. The dielectric 22 is made of, for example, a ceramic material such as alumina, silicon carbide, or silicon nitride, an inorganic material such as quartz glass or alkali-free glass, or a synthetic resin material such as fluororesin.

The dielectric 22 has a dielectric flange portion 22a airtightly attached to the wall surface of the vacuum vessel 2, and a metal plate 23 so as to block a plurality of slits (not shown) provided in the metal plate 23. and a metal plate support portion 22 b that supports the metal plate 23 in contact with the metal plate 23 . As shown in FIG. 13, the metal plate supporting portion 22b has a semi-cylindrical cross-sectional shape and constitutes the semi-cylindrical portion of the high-frequency window 21. As shown in FIG.

The metal plate 23 has a thickness of, for example, about 1 mm to 5 mm, like the metal plate 12 described above. The metal plate 23 is, for example, one metal selected from the group containing copper, aluminum, zinc, nickel, tin, silicon, titanium, iron, chromium, niobium, carbon, molybdenum, tungsten, or cobalt, or It is configured using an alloy of those. Also, the metal plate 23 is grounded through the vacuum vessel 2 by being electrically connected to the vacuum vessel 2, for example.

That is, the metal plate 23 constitutes a Faraday shield, allowing the high-frequency magnetic field generated by the antenna 14 to pass through the interior of the vacuum vessel 2 and preventing the electric field generated by the antenna 14 from entering the interior of the vacuum vessel 2. is configured to

With the above configuration, the sputtering apparatus 1 of the fourth embodiment has the same effects as those of the first embodiment. Further, in the sputtering apparatus 1 of the fourth embodiment, the dielectric 22 is formed in a semi-cylindrical shape together with the dielectric flange portion 22a attached to the wall surface of the vacuum vessel 2, and contacts the metal plate 23 so that the metal plate 23 and a metal plate support portion 22b for supporting the .

As a result, in the sputtering apparatus 1 of the fourth embodiment, the vacuum vessel 2 is hermetically sealed with a smooth dielectric material that is not provided with an uneven shape. It is possible to suppress the arrangement of uneven portions. As a result, in the sputtering apparatus 1 of Embodiment 4, it is possible to suppress the generation of particles caused by the slits.

In the above description, the configuration using the dielectric 22 having the dielectric flange portion 22a has been described, but the dielectric of this embodiment is not particularly limited as long as it closes the slit. For example, without providing the dielectric flange portion 22a on the dielectric, the dielectric may be attached to the wall surface by interposing a mounting member configured separately from the metal plate support portion 22b.

〔summary〕
In order to solve the above problems, a sputtering apparatus according to one aspect of the present disclosure includes a vacuum vessel that houses a stage for placing an object to be processed, and a vacuum vessel that faces the object to be processed placed on the stage. a target disposed inside the vacuum vessel, a metal plate having a slit, and a dielectric superimposed on the metal plate to generate a plasma inside the vacuum vessel, and a high-frequency magnetic field is applied to A high-frequency window is introduced into the vacuum vessel and provided on the wall surface of the vacuum vessel to which the target is attached, and the high-frequency magnetic field is arranged outside the vacuum vessel and close to the high-frequency window. and a linear antenna for generating the high-frequency window, the high-frequency window having a semi-cylindrical portion with an axis parallel to the wall surface.

According to the above configuration, it is possible to provide a sputtering apparatus capable of increasing the plasma density in the vicinity of the target.

In the sputtering apparatus according to the above aspect, the high-frequency window may be arranged such that the semi-cylindrical portion protrudes from the wall surface into the vacuum vessel.

According to the above configuration, the distance between the high-frequency window and the target can be reliably reduced, and the plasma density in the vicinity of the target can be increased.

In the sputtering apparatus according to the one aspect described above, the antenna may be arranged on a side closer to the target inside the semi-cylindrical portion.

According to the above configuration, plasma can be efficiently generated in the target.

In the sputtering apparatus according to one aspect described above, the antenna includes a straight line parallel to the direction in which the object to be processed and the target face each other, a center of curvature of the semi-cylindrical portion perpendicular to the extending direction of the antenna, and It may be arranged so that the angle formed by the straight line passing through the center of the antenna is 30 degrees or more and 60 degrees or less.

According to the above configuration, it is possible to reliably increase the plasma density in the vicinity of the target.

In the sputtering apparatus according to one aspect described above, a plurality of the antennas may be arranged close to one of the high-frequency windows.

According to the above configuration, even when plasma is generated for a plurality of targets, it is possible to easily configure a compact sputtering apparatus capable of increasing the plasma density near each target.

In the sputtering apparatus according to one aspect described above, the metal plate may be provided closer to the inside of the vacuum vessel than the dielectric.

According to the above configuration, the dielectric is provided outside the vacuum vessel with the semi-cylindrical metal plate interposed therebetween, so that the dielectric can be firmly supported.

In the sputtering apparatus according to one aspect, the dielectric may be provided closer to the inside of the vacuum vessel than the metal plate.

According to the above configuration, the vacuum vessel is airtightly sealed by the dielectric without the interposition of the slit, and the generation of particles due to the slit can be suppressed.

The present disclosure is not limited to each embodiment described above, various modifications are possible within the scope shown in the claims, and embodiments obtained by appropriately combining technical means disclosed in different embodiments are also included in the technical scope of the present disclosure.

Reference Signs List 1 sputtering device 2 vacuum vessel 11, 21 high-frequency window 11a semi-cylindrical portion 12, 23 metal plate 12s slit 13, 22 dielectric 14 antenna H stage H1 workpiece Tr target

Claims (7)

a vacuum vessel that houses a stage for placing an object to be processed;
a target arranged inside the vacuum vessel so as to face the object to be processed placed on the stage;
A high-frequency magnetic field is introduced into the interior of the vacuum vessel, and the target of the vacuum vessel is provided with a metal plate having a slit and a dielectric superimposed on the metal plate to generate plasma within the vacuum vessel. a high-frequency window provided on the wall surface to which the
a linear antenna disposed outside the vacuum vessel and close to the high-frequency window and generating the high-frequency magnetic field;
The sputtering apparatus according to claim 1, wherein the high-frequency window has a semi-cylindrical portion with an axis parallel to the wall surface. 2. The sputtering apparatus according to claim 1, wherein said high-frequency window is arranged such that said semi-cylindrical portion protrudes into said vacuum vessel from said wall surface. 3. The sputtering apparatus according to claim 1, wherein said antenna is arranged inside said semi-cylindrical portion on a side closer to said target. The antenna comprises a straight line parallel to the direction in which the object to be processed and the target face each other, and a straight line perpendicular to the extending direction of the antenna and passing through the center of curvature of the semi-cylindrical portion and the center of the antenna. 4. The sputtering apparatus according to claim 3, arranged so as to form an angle of 30 degrees or more and 60 degrees or less. 5. The sputtering apparatus according to any one of claims 1 to 4, wherein a plurality of said antennas are arranged close to one said high frequency window. 6. The sputtering apparatus according to any one of claims 1 to 5, wherein said metal plate is provided closer to the inside of said vacuum vessel than said dielectric. 6. The sputtering apparatus according to any one of claims 1 to 5, wherein said dielectric is provided closer to the inside of said vacuum vessel than said metal plate.

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