TW202333231A - Sputtering device - Google Patents

Abstract

Provided is a sputtering device capable of increasing plasma density in the vicinity of the target. The sputtering device (1) comprises: a target (Tr) disposed inside a vacuum vessel (2) so as to face an object being treated (H1) that is loaded on a stage (H); a high frequency window (11) that is provided with a metal sheet (12) that has a slit (12s) and a dielectric (13), introduces a high frequency magnetic field inside the vacuum vessel (2) to generate plasma inside the vacuum vessel (2), and is provided on the wall surface of the vacuum vessel (2) where the target (Tr) is attached; and a linear antenna (14) that is disposed outside the vacuum vessel (2) near the high frequency window (11) and generates a high frequency magnetic field. The high frequency window (11) has a semicylindrical part (11a) provided so that the axis is parallel to said wall surface.

Description

Sputtering device

The present disclosure relates to a sputtering device.

The sputtering apparatus includes a vacuum container that accommodates an object to be processed and a target arranged to face the object to be processed, and sputters the target using plasma to form a film on the object to be processed. As such a sputtering apparatus, a sputtering apparatus is known which includes a casing and a Faraday shield provided with a dielectric serving as a high-frequency window that passes through the high-frequency magnetic field, and generates a high-frequency magnetic field. Antenna. [Prior art documents] [Patent Document]

[Patent Document 1] Japanese Patent Application Publication No. 2012-253313

[Problem to be solved by the invention]

As described above, in a sputtering apparatus in which an antenna is provided outside the vacuum vessel, it is difficult to increase the plasma density near the target. In a sputtering apparatus provided with an antenna outside a vacuum vessel, it is desired to increase the plasma density near the target more efficiently.

The present disclosure has been made in view of the above problems, and aims to provide a sputtering apparatus capable of increasing the plasma density near the target. [Means to solve the problem]

In order to solve the above-mentioned problems, a sputtering device according to one aspect of the present disclosure includes: a vacuum container that houses a stage for placing an object to be processed; and a target to interact with the object to be processed placed on the stage. The high-frequency window includes a metal plate with a slit and a dielectric overlapping the metal plate, in order to generate electricity inside the vacuum container. The slurry is used to introduce a high-frequency magnetic field into the interior of the vacuum container and is disposed on the wall surface of the vacuum container on which the target is mounted; and a linear antenna is located outside the vacuum container close to the high-frequency The high-frequency window is configured to generate the high-frequency magnetic field, and the high-frequency window has a semi-cylindrical portion provided with an axis parallel to the wall surface. [Effects of the invention]

According to one aspect of the present disclosure, a sputtering apparatus capable of increasing plasma density near a target can be provided.

[Embodiment 1] Hereinafter, Embodiment 1 of the present disclosure will be described in detail using FIGS. 1 and 2 . FIG. 1 is a plan view of the sputtering apparatus 1 according to Embodiment 1 of the present disclosure. FIG. 2 is a cross-sectional view of the main structure of the sputtering device 1 when viewed from the axial direction.

＜Sputtering device 1＞ As shown in FIGS. 1 and 2 , the sputtering apparatus 1 of this embodiment includes: a vacuum container 2; and a target holder 3, which is detachably provided in the vacuum container 2 and is used to arrange the target Tr in the vacuum container. Inside of container 2. Furthermore, the sputtering apparatus 1 of this embodiment includes a plasma source 10 and generates plasma inside the vacuum container 2 . The vacuum container 2 accommodates the object H1 and the stage H for placing the object H1.

Furthermore, in the vacuum container 2, the object H1 and the stage H are carried in and out between the vacuum container 2 and the outside by a conveying device (not shown). The plasma source 10 is an electromagnetic field generation source for generating plasma inside the vacuum container 2 (details will be described later). In addition, in FIG. 2 , the opposing direction of the object H1 and the target Tr is the up-down direction of the vacuum container 2 , and the target Tr is provided on the upper top surface of the vacuum container 2 , for example.

Inside the vacuum container 2, the object to be processed H1 is subjected to a film-forming process. The film-forming process is to sputter the target Tr using plasma while maintaining a predetermined degree of vacuum to form a film on the object to be processed H1. membrane. The object H1 to be processed may be, for example, a glass substrate or a synthetic resin substrate used in a liquid crystal panel display, an organic electroluminescence (EL) panel display, or the like. Furthermore, the object H1 to be processed may be a semiconductor substrate used for various purposes. The sputtering apparatus 1 forms a predetermined film such as an oxide semiconductor or a magnetic material on the object H1 through the film formation process.

Furthermore, a gas supply mechanism (not shown) is connected to the vacuum container 2 , and an inert gas such as argon gas is supplied to the inside of the vacuum container 2 through the gas supply mechanism. Furthermore, the sputtering apparatus 1 is configured to perform the film forming process in an inert gas environment.

＜Target stand 3＞ The target rack 3 includes: a target rack body 3a; a rectangular insulation flange 5, which is provided on the outer periphery of the target rack body 3a and is used to airtightly install the target rack body 3a to the vacuum container 2; and a backing plate ( backing plate) 6. A backing plate 6 is mounted on the target holder body 3a and is disposed in the insulating flange 5 to cool the target Tr. The backing plate 6 is configured to appropriately hold the target Tr corresponding to the film formation process.

The backing plate 6 includes, for example, an inflow port 6a and an outflow port 6b through which cooling media such as cooling water flows in and out respectively, and a flow path 6c that communicates with the inflow port 6a and the outflow port 6b. Furthermore, the target Tr is adhered to the lower surface of the backing plate 6 , for example.

During the film formation process, the target holder 3 holds the target Tr so that the main surface of the target Tr and the film formation surface of the object H1 placed on the stage H face each other in a parallel state. Furthermore, in order to prevent abnormal discharge at the end of the target Tr, the target holder 3 is provided with a ground electrode (anode electrode) 7 covering the surface of the target Tr via a gap. The ground electrode 7 is electrically connected to the vacuum vessel 2 and is grounded via the vacuum vessel 2 .

The target Tr is connected to a power source 8 via the backing plate 6 . During the film formation process, a pulsed DC voltage or an AC voltage is applied to the target Tr from the power source 8 in the form of a bias voltage. This bias voltage is a voltage that feeds ions (for example, argon ions (Ar ⁺ )) in the plasma inside the vacuum container 2 to the target Tr to cause sputtering, and is set to -200 V to -1 kV, for example. value within the range. In addition, as shown by L1 in FIG. 2 , the length dimension of the target Tr is, for example, 150 mm.

<Structure of plasma source 10> The plasma source 10 includes a high-frequency window 11 for introducing a high-frequency magnetic field into the inside of the vacuum vessel 2 in order to generate plasma inside the vacuum vessel 2 . Furthermore, the plasma source 10 includes a linear antenna 14 disposed outside the vacuum container 2 close to the high-frequency window 11 and generates the high-frequency magnetic field.

＜High frequency window 11＞ The high-frequency window 11 includes a metal plate 12 having a slit 12 s and a dielectric 13 overlaid on the metal plate 12 , and is provided on the wall surface on which the target Tr of the vacuum container 2 is mounted. That is, as shown in FIG. 2 , the high-frequency window 11 is arranged in a state where the metal plate 12 and the dielectric body 13 which are provided closer to the inside of the vacuum container 2 than the dielectric body 13 overlap with each other. Furthermore, the high-frequency window 11 is attached to the wall surface on which the target Tr is mounted, that is, the upper surface (top surface) of the vacuum container 2 .

As shown in FIG. 2 , the high-frequency window 11 has a semi-cylindrical portion 11 a having a semi-cylindrical shape when viewed in cross section. This semi-cylindrical part 11a is provided so that an axis may be parallel to the wall surface of the vacuum container 2 in which the target Tr is mounted. Furthermore, the semicylindrical portion 11 a is formed to have a predetermined radius of curvature (for example, 20 mm to 90 mm) with the center of curvature C1 as the axis of the shaft as the center.

Furthermore, in the present embodiment, by setting the curvature radius of the semi-cylindrical portion 11a to a value in the range of 20 mm to 90 mm, it is possible to suppress the current flowing in the antenna 14 from becoming large, thereby efficiently generating a high voltage. frequency magnetic field. Furthermore, the distance between the target Tr and the object H1 to be processed can be suppressed from increasing, and the film formation process on the object H1 to be processed can be efficiently performed.

In addition, when the curvature radius of the semi-cylindrical portion 11a is set to a value less than 20 mm, the antenna 14 is close to the metal plate 12, so an induced current is easily generated, and the current flowing in the antenna 14 is consumed. Therefore, it is difficult to generate a high-frequency magnetic field efficiently. Furthermore, when the radius of curvature of the semi-cylindrical part 11a is set to a value exceeding 90 mm, the semi-cylindrical part 11a protrudes greatly into the inside of the vacuum container 2. Therefore, the distance between the target Tr and the object H1 cannot be suppressed from increasing, and it is difficult to efficiently perform film formation on the object H1.

Furthermore, as shown in FIG. 2 , the high-frequency window 11 is arranged such that the semi-cylindrical portion 11 a protrudes from the wall surface into the vacuum container 2 . Specifically, as shown in L2 in FIG. 2 , the semi-cylindrical portion 11 a is disposed so as to protrude from the inner surface of the vacuum container 2 from the wall surface into the inside of the vacuum container 2 with a size of, for example, 40 mm.

＜Metal Plate 12＞ The metal plate 12 is made of, for example, one metal or an alloy of these metals selected from the group consisting of copper, aluminum, zinc, nickel, tin, silicon, titanium, iron, chromium, niobium, carbon, molybdenum, tungsten, or cobalt. composition.

The metal plate 12 has a thickness of about 1 mm to 5 mm, for example. The metal plate 12 includes a metal flange portion 12a, which is attached to the wall surface of the vacuum container 2, and a dielectric support portion 12b, which forms a plurality of slits 12s and is in contact with the dielectric 13 to support the dielectric 13.

The metal flange portion 12a is attached to the wall surface of the vacuum container 2 in an airtight manner. Thereby, the metal plate 12 is grounded via the vacuum container 2 . In the dielectric support part 12b, as shown in FIG. 1, a plurality of slits 12s are provided at predetermined intervals along the longitudinal direction of the antenna 14. Thereby, the metal plate 12 is configured to transmit the high-frequency magnetic field generated by the antenna 14 to the inside of the vacuum container 2 and prevent the electric field generated by the antenna 14 from entering the inside of the vacuum container 2 .

In addition, in the above description, the structure using the metal plate 12 having the metal flange portion 12a has been described, but the metal plate of this embodiment is not limited as long as it has slits. For example, a structure may be adopted in which, instead of providing the metal flange portion 12a on the metal plate, the metal plate is mounted on the wall surface by interposing a mounting member formed separately from the dielectric support portion 12b. .

＜Dielectric 13＞ The dielectric 13 is composed of, for example, a synthetic resin film such as fluororesin with a thickness of about 1 mm to 5 mm. Furthermore, the dielectric body 13 is configured to close the plurality of slits 12 s when it is overlapped on the metal plate 12 . Furthermore, in the high-frequency window 11 , the dielectric 13 allows the high-frequency magnetic field from the antenna 14 to pass through to the inside of the vacuum container 2 and can maintain the vacuum state inside the vacuum container 2 .

In addition, in addition to the above description, the dielectric 13 only needs to be a magnetically permeable material, and may be composed of, for example, ceramic materials such as aluminum oxide, silicon carbide, and silicon nitride, or inorganic materials such as quartz glass and alkali-free glass. Furthermore, the dielectric 13 is preferably a dielectric with a low dielectric loss factor, and more specifically, a dielectric with a dielectric loss factor of 0.001 or less under high-frequency heating. Furthermore, if the dielectric 13 is made of a material with a dielectric loss factor of 0.001 or more, then it is preferable to set the distance between the metal plate 12 and the antenna 14 appropriately.

＜Antenna 14＞ The antenna 14 is made of, for example, a pipe-shaped metal material (such as copper, aluminum, alloys of these metals, stainless steel, etc.) and is disposed close to the high-frequency window 11 inside the semi-cylindrical portion 11 a. Furthermore, the antenna 14 is arranged on the side closer to the target Tr inside the semi-cylindrical portion 11a. In addition, the metal material is preferably coated with a low-resistance metal or alloy with a thickness greater than the skin thickness.

That is, as shown in FIG. 2 , the antenna 14 is arranged on the right side of FIG. 2 closer to the target Tr than the center of curvature C1 of the semi-cylindrical portion 11 a. Specifically, as shown in L3 in FIG. 2 , a vertical line passing through the center 14 c of the antenna 14 and parallel to the up-down direction and the center side of the target Tr of the ground electrode 7 on the side close to the semi-cylindrical portion 11 a The distance between the end faces is set to 50 mm, for example.

Furthermore, a high-frequency power supply 15 is connected to one end of the antenna 14, and the other end of the antenna 14 is grounded. Furthermore, a high-frequency current with a frequency of, for example, 13.56 MHz is supplied to the antenna 14 from the high-frequency power supply 15 . In the sputtering device 1 , a high-frequency current flows through the antenna 14 to generate an induced electric field in the vacuum container 2 , thereby generating an inductively coupled plasma P. Furthermore, a flow path is formed inside the antenna 14 through which a cooling medium (for example, cooling water) that cools the antenna 14 flows.

＜Effect＞ The sputtering apparatus 1 of this embodiment configured as described above includes a target Tr arranged inside the vacuum container 2 so as to face the object H1 placed on the stage H. Furthermore, the sputtering apparatus 1 of this embodiment includes a high-frequency window 11, a metal plate 12 having a slit 12s, and a dielectric 13. In order to generate plasma inside the vacuum container 2, a high-frequency magnetic field is introduced into inside the vacuum container 2 and is provided on the wall surface of the vacuum container 2 on which the target Tr is mounted. Furthermore, the sputtering apparatus 1 of this embodiment includes the linear antenna 14 which is disposed outside the vacuum container 2 close to the high-frequency window 11 and generates a high-frequency magnetic field.

Moreover, in the sputtering apparatus 1 of this embodiment, the high-frequency window 11 has the semi-cylindrical part (11a) provided so that an axis may be parallel to the said wall surface. Thereby, in the sputtering apparatus 1 of this embodiment, as shown in FIG. 2 , the dielectric body 13 has a semi-cylindrical shape when viewed in cross section, so the strength of the dielectric body 13 can be further improved. As a result, in the sputtering apparatus 1 of this embodiment, the film thickness of the dielectric 13 can be easily reduced, the distance between the antenna 14 and the target Tr can be reduced, and the plasma density in the vicinity of the target Tr can be increased.

Furthermore, in the sputtering apparatus 1 of this embodiment, the plasma inside the vacuum container 2 is released to the inside side of the vacuum container 2 via the semi-cylindrical portion 11a of the high-frequency window 11, so that the target Tr can be sprayed more uniformly and more uniformly. Give plasma widely. Thereby, in the sputtering apparatus 1 of this embodiment, the film formation process can be performed efficiently, and the film formation on the object H1 can be performed in a short time.

Furthermore, in the sputtering apparatus 1 of this embodiment, a high-frequency magnetic field can be further introduced from the semi-cylindrical portion 11a of the high-frequency window 11 in the direction of the target Tr, and the plasma density near the target Tr can be further increased.

Furthermore, in the sputtering apparatus 1 of this embodiment, the semi-cylindrical part 11a is provided in the high-frequency window 11 and the slit 12s is formed in the semi-cylindrical part 11a. Compared with the opening area, the opening area of the slit 12s can be increased. Thereby, in the sputtering apparatus 1 of this embodiment, active species such as oxygen ions (O ₂ ^- ) contained in the plasma that passes through the slit 12 s can be expanded in a wider range. As a result, in the sputtering apparatus 1 of this embodiment, even when the object H1 moves directly under the plasma source 10 , the film formation process can be performed on the object H1 .

Moreover, in the sputtering apparatus 1 of this embodiment, the antenna 14 is arrange|positioned on the side close to the target Tr inside the semi-cylindrical part 11a. Thereby, in the sputtering apparatus 1 of this embodiment, plasma can be efficiently generated near the target Tr.

Furthermore, in the sputtering apparatus 1 of this embodiment, the metal plate 12 includes a metal flange portion 12a attached to the wall surface, and a dielectric support portion 12b that forms the slit 12s and is in contact with the dielectric 13. Support dielectric 13. Thereby, in the sputtering apparatus 1 of this embodiment, the dielectric body 13 is provided outside the vacuum container 2 with the semi-cylindrical metal plate 12 interposed, and the dielectric body 13 can be firmly supported.

＜Examples of test results＞ Here, the specific effects of the sputtering apparatus 1 of this embodiment will be described with reference to FIGS. 3 to 9 as well. FIG. 3 is a diagram illustrating the main structure of Comparative Example 1. FIG. FIG. 4 is a graph showing an example of measurement results of plasma density with respect to the distance from the target center in each of the present embodiment product and Comparative Example 1. FIG. FIG. 5 is a graph showing an example of measurement results of the ratio of the plasma density to the power output with respect to the distance from the target center in each of the present embodiment product and Comparative Example 1. FIG.

FIG. 6 is a diagram illustrating an example of an upper evaluation position and a lower evaluation position in the product of this embodiment. 7 is a diagram illustrating an example of an upper evaluation position and a lower evaluation position in Comparative Example 2. FIG. 8 is a diagram showing an example of measurement results of plasma density with respect to the horizontal distance from the antenna in each of the present embodiment product and Comparative Example 2. FIG. 9 is a diagram showing an example of measurement results at a lower evaluation position of plasma density with respect to the horizontal distance from the antenna in each of the present embodiment product and Comparative Example 2.

In FIG. 3 , Comparative Example 1 includes a target holder 103 having a target Tr and a cooling mechanism 106 for cooling the target Tr, and is attached to a vacuum container 102 . Furthermore, Comparative Example 1 includes a high-frequency window 111 , a flat metal plate 112 having a slit 112 a , and a dielectric 113 provided on the metal plate 112 below the antenna 114 , and is installed in the vacuum container 102 .

In Comparative Example 1, unlike the product of this embodiment shown in FIG. 2 , as shown in FIG. 3 , the opening angle between the surface of the target Tr and the flat high-frequency window 111 becomes an angle of 180 degrees. is arranged in the vacuum container 102.

Here, in Comparative Example 1, if plasma is generated inside the vacuum vessel 102 by the high-frequency magnetic field introduced from the high-frequency window 111 into the inside of the vacuum vessel 102, then according to the distance from the target shown as C2 in Fig. 3 The distance between the centers of Tr and the plasma density are different.

That is, assuming that the maximum value of the plasma density in the inside of the vacuum container 102 is 1, as shown by the black square in FIG. 4 , in Comparative Example 1, the plasma density increases as it approaches the center of the target Tr. The value of the relative ratio of density becomes significantly smaller. Furthermore, it reaches a value of approximately zero up to the center of the target Tr. In addition, the vertical axis of FIG. 4 represents plasma density, and the horizontal axis of FIG. 4 represents, for example, the distance from the target center indicated by C2 in FIG. 3 .

Furthermore, in Comparative Example 1, as shown by the black square in FIG. 5 , the value of the ratio of the plasma density to the power supply output greatly decreases as it approaches the center of the target Tr. In addition, the vertical axis of FIG. 5 represents the value of plasma density/high frequency power as the ratio of plasma density to power supply output, and the horizontal axis of FIG. 5 represents, for example, the distance from the target center.

On the other hand, in the product of this embodiment, as shown by the black circle in FIG. 4 , when the maximum value of the plasma density in the inside of the vacuum container 2 is 1, as it approaches the target Tr, At the center, the value of the relative ratio of plasma density becomes smaller, but it does not become zero even at the center of the target Tr. Furthermore, in this embodiment product, at a position passing through the end of the target Tr on the opposite side to the plasma source 10, for example, a position 130 mm from the center of the target Tr, the value of the relative ratio of the plasma density becomes substantially zero. value.

Moreover, in the product of this embodiment, as shown by the black circle in FIG. 5 , it was confirmed that even if the value of the ratio of the plasma density to the power supply output is close to the center of the target Tr, the reduction rate is smaller compared with Comparative Example 1. , a sufficient value is also shown at the end on the opposite side of the target Tr.

As described above, it was verified that the product of this embodiment can increase the plasma density near the target Tr compared with Comparative Example 1.

Furthermore, when performing the verification test of the product of this embodiment, as shown in FIG. 6 , the plasma measurement results at the upper evaluation position UP and the lower evaluation position DP were detected. In addition, the upper evaluation position UP is a position just below the distance L4 (for example, 17 mm) from the center 14 c of the antenna 14 to the inside side of the vacuum container 2 . Furthermore, the lower evaluation position DP is a position just below the distance L5 (for example, 92 mm) from the center 14 c of the antenna 14 toward the inside of the vacuum container 2 .

Furthermore, in Comparative Example 2, as shown in FIG. 7 , the high-frequency window including the metal plate 112 and the dielectric 113 was provided in the vacuum vessel 102 so that the slit 112 a formed an angle of 120 degrees with respect to the vacuum vessel 102 . . Furthermore, in Comparative Example 2, when performing the verification test, as shown in FIG. 7 , the plasma measurement results at the upper evaluation position UP1 and the lower evaluation position DP1 were detected. The upper evaluation position UP1 is a position just below the center 114 c of the antenna 114 by a distance L6 (for example, 20 mm) toward the inside of the vacuum container 102 . Furthermore, the lower evaluation position DP1 is a position just below the center 114 c of the antenna 114 by a distance L7 (for example, 98 mm) toward the inside of the vacuum container 102 .

Furthermore, in the verification test, in Comparative Example 2, the plasma densities at the upper evaluation position UP1 and the lower evaluation position DP1 at positions different in horizontal distance from the center 114c of the antenna 114 were obtained. Furthermore, at the upper evaluation position UP1 and the lower evaluation position DP1, the value of the plasma density at a distance of 30 mm from the center 114c of the antenna 114 is set to 1, and the value of the relative ratio of the plasma density is obtained as the plasma Density is shown on the vertical axis of Figure 8 . Furthermore, the test results at the upper evaluation position UP1 and the lower evaluation position DP1 are respectively represented by black circles and white circles in FIG. 8 .

Furthermore, in the verification test, in the product of this embodiment, the plasma densities at the upper evaluation position UP and the lower evaluation position DP at positions different in horizontal distance from the center 14c of the antenna 14 were obtained. Furthermore, at the upper evaluation position UP and the lower evaluation position DP, the value of the plasma density at a distance of 30 mm from the center 14c of the antenna 14 is set to 1, and the value of the relative ratio of the plasma density is obtained as the plasma Density is shown on the vertical axis of Figure 8 . Furthermore, the test results at the upper evaluation position UP and the lower evaluation position DP are represented by black triangles and white triangles in FIG. 8 , respectively.

As is clear from FIG. 8 , in the product of this embodiment, it was confirmed that the plasma density was higher than that of Comparative Example 2 in each of the upper evaluation position and the lower evaluation position. Furthermore, in this embodiment product, it was confirmed that the difference between the test results at the upper evaluation position UP and the lower evaluation position DP when the horizontal distance from the center 14 c of the antenna 14 is the same (for example, 100 mm) is Comparative Example 2 is relatively small. In addition, the vertical axis of FIG. 8 represents the plasma density, and the horizontal axis of FIG. 8 represents the distance from the center 14 c or the center 114 c of the antenna 14 or the antenna 114 .

As described above, it was verified that the product of this embodiment can apply plasma to the target Tr more uniformly and widely compared with Comparative Example 2.

Furthermore, in the product of this embodiment, as is clear from FIG. 9 , it was confirmed that at the lower evaluation position DP, which is the position directly below the antenna 14 (that is, the position where the horizontal distance is 0), the plasma density is higher than that of Comparative Example 2 The plasma density at the lower evaluation position DP1 is high. That is, it was confirmed that in the product of this embodiment, even when the object H1 is moved directly under the plasma source 10 , the film formation process can be appropriately performed and the film formation on the object H1 can be appropriately performed. . In addition, like the vertical axis of FIG. 8 , the vertical axis of FIG. 9 represents the plasma density, which is a relative ratio value assuming that the value of the plasma density at a distance of 30 mm from the center 14 c or the center 114 c is 1. The horizontal axis of FIG. 9 represents the distance from the center 14 c or the center 114 c of the antenna 14 or the antenna 114 .

[Embodiment 2] Embodiment 2 of the present disclosure will be specifically described using FIG. 10 . FIG. 10 is a diagram illustrating a structural example of a main part of the sputtering apparatus 1 according to Embodiment 2 of the present disclosure. In addition, for convenience of description, members having the same functions as those described in the embodiments are denoted by the same reference numerals, and description thereof will not be repeated.

In the second embodiment, the arrangement of the antenna 14 is defined using a straight line parallel to the opposing direction of the object H1 and the target Tr, the center of curvature C1 of the semicylindrical portion 11a, and the center 14c of the antenna 14.

In the sputtering apparatus 1 of the second embodiment, as shown in FIG. 10 , the antenna 14 has a vertical line S1 passing through the center 14 c of the antenna 14 and a curvature that is perpendicular to the extending direction of the antenna 14 and passes through the semi-cylindrical portion 11 a. The angle θ formed by the center C1 and the straight line S2 of the center 14c is 30 degrees or more and 60 degrees or less.

In addition, the vertical line S1 is an example of a straight line parallel to the opposing direction of the object H1 and the target Tr, and the angle θ is the angle between the parallel straight line and the straight line S2.

With the above structure, the sputtering apparatus 1 of this Embodiment 2 can reliably further increase the plasma density near the target Tr.

＜Examples of test results＞ Here, the specific effect of the sputtering apparatus 1 of this Embodiment 2 is demonstrated also with reference to FIG. 11. FIG. 11 is a diagram showing an example of measurement results of plasma density with respect to the horizontal distance from the antenna 14 when the angle θ in the sputtering apparatus 1 shown in FIG. 10 is changed. In addition, the vertical axis of FIG. 11 represents the plasma density, and the horizontal axis of FIG. 11 represents the distance from (the center of) the antenna 14 .

It was confirmed that compared with the case where the angle θ represented by the black triangle and the white circle in FIG. 11 is 15 degrees and 75 degrees, respectively, When the angles θ represented by the squares and white-painted rhombuses are respectively 30 degrees, 45 degrees, and 60 degrees, the plasma density increases regardless of the horizontal distance from the antenna 14 .

That is, in this Embodiment 2, it was confirmed that by setting the angle θ so as to be 30 degrees or more and 60 degrees or less, the plasma density in the vicinity of the target Tr can be reliably increased.

[Embodiment 3] Embodiment 3 of the present disclosure will be specifically described using FIG. 12 . FIG. 12 is a diagram illustrating the main structure of the sputtering apparatus 1 according to Embodiment 3 of the present disclosure. In addition, for convenience of description, members having the same functions as those described in the embodiments are denoted by the same reference numerals, and description thereof will not be repeated.

The main difference between Embodiment 3 and Embodiment 1 is that multiple antennas 14 are arranged close to one high-frequency window 11 .

In the sputtering apparatus 1 of this Embodiment 3, as shown in FIG. 12, two target holders 3 holding the target Tr respectively are installed in the vacuum container 2 parallel to each other so that the plasma source 10 is sandwiched between them. In the plasma source 10 sandwiched between the two target frames 3, a plurality of, for example, two antennas 14 are provided with respect to one high-frequency window 11.

Among the two antennas 14 , one and the other antenna 14 are respectively disposed inside the semi-cylindrical portion 11 a close to one and the other side of the target frame 3 holding the plasma source 10 . One and the other antenna 14 respectively cause the target Tr of one and the other target frame 3 to generate plasma.

Furthermore, in each of the one and the other target frames 3 , the plasma source 10 having one antenna 14 is provided on the opposite side to the plasma source 10 having two antennas 14 . That is, in the sputtering apparatus 1 of this Embodiment 3, as shown in FIG. 12, two target racks 3 and three plasma sources 10 are provided in a linear shape.

Thereby, in the sputtering apparatus 1 of Embodiment 3, plasma from the two high-frequency windows 11 sandwiching the target Tr is applied to each target Tr. As a result, in the sputtering apparatus 1 of the third embodiment, compared with the sputtering apparatus 1 of the first embodiment, it is possible to easily form a film on the large-sized object H1 using plasma.

As described above, in the sputtering apparatus 1 of the third embodiment, a plurality of antennas 14 are arranged close to one high-frequency window 11 . Thereby, in this Embodiment 3, when a plurality of targets Tr are caused to generate plasma, a compact sputtering apparatus 1 that can increase the plasma density near each target Tr can be easily configured.

[Embodiment 4] Embodiment 4 of the present disclosure will be specifically described using FIG. 13 . FIG. 13 is a diagram illustrating the main structure of the sputtering apparatus 1 according to Embodiment 4 of the present disclosure. In addition, for convenience of description, members having the same functions as those described in the embodiments are denoted by the same reference numerals, and description thereof will not be repeated.

The main difference between the fourth embodiment and the first embodiment is that the dielectric body 22 is provided with: a dielectric flange portion 22a, which is mounted on the wall surface of the vacuum vessel 2; and a metal plate support portion 22b, which is configured as a semicircle. It has a cylindrical shape and is in contact with the metal plate 23 to support the metal plate 23 .

In the sputtering apparatus 1 of this Embodiment 4, as shown in FIG. 13, the dielectric body 22 is provided inside the vacuum container 2 rather than the metal plate 23. The dielectric 22 is made of, for example, ceramic materials such as aluminum oxide, silicon carbide, and silicon nitride; inorganic materials such as quartz glass and alkali-free glass; or synthetic resin materials such as fluororesin.

Furthermore, the dielectric body 22 includes a dielectric flange portion 22a that is airtightly attached to the wall surface of the vacuum container 2, and a metal plate support portion 22b that connects a plurality of slits (not shown) provided in the metal plate 23. ) in a closed manner, contacting the metal plate 23 and supporting the metal plate 23 . Furthermore, as shown in FIG. 13 , the cross-sectional shape of the metal plate support portion 22 b is formed into a semi-cylindrical shape, and constitutes the semi-cylindrical portion of the high-frequency window 21 .

Like the metal plate 12, the metal plate 23 has a thickness of about 1 mm to 5 mm, for example. Furthermore, the metal plate 23 uses, for example, one metal selected from the group consisting of copper, aluminum, zinc, nickel, tin, silicon, titanium, iron, chromium, niobium, carbon, molybdenum, tungsten, or cobalt or a metal of these metals. Made of alloy. Furthermore, the metal plate 23 is electrically connected to the vacuum container 2 and is grounded via the vacuum container 2 , for example.

That is, the metal plate 23 constitutes a Faraday shield and is configured to allow the high-frequency magnetic field generated by the antenna 14 to pass through the inside of the vacuum container 2 and to prevent the electric field generated by the antenna 14 from entering the inside of the vacuum container 2 .

With the above structure, the sputtering apparatus 1 of this Embodiment 4 exhibits the same effect as the sputtering apparatus 1 of Embodiment 1. Furthermore, in the sputtering device 1 of the fourth embodiment, the dielectric 22 includes a dielectric flange portion 22a attached to the wall surface of the vacuum container 2 and a metal plate support portion 22b configured in a semi-cylindrical shape. It is in contact with the metal plate 23 and supports the metal plate 23 .

Thereby, in the sputtering apparatus 1 of this Embodiment 4, the vacuum container 2 is airtightly sealed by the smooth dielectric body which does not provide an uneven|corrugated shape, Therefore It is possible to suppress the interference with the slit inside the vacuum container 2. Concave and convex parts corresponding to the shape. As a result, in the sputtering apparatus 1 of the fourth embodiment, the generation of particles caused by the slits can be suppressed.

In addition, in the above description, the structure using the dielectric body 22 having the dielectric body flange portion 22a has been described. However, as long as the dielectric body of this embodiment is a dielectric body that closes the slit, No restrictions. For example, a structure may be adopted in which the dielectric flange portion 22 a is not provided on the dielectric body, but a mounting member formed separately from the metal plate support portion 22 b is interposed and the dielectric body is mounted on the dielectric body. said wall.

[Summary] In order to solve the above problems, a sputtering apparatus according to one aspect of the present disclosure includes: a vacuum container housing a stage for placing an object to be processed; and a target facing the object to be processed placed on the stage. The method is arranged inside the vacuum container; the high-frequency window includes a metal plate with a slit and a dielectric overlapping the metal plate. In order to generate plasma inside the vacuum container, the high-frequency window is A magnetic field is introduced into the interior of the vacuum container and is provided on a wall surface of the vacuum container on which the target is mounted; and a linear antenna is disposed outside the vacuum container close to the high-frequency window and generates In the high-frequency magnetic field, the high-frequency window has a semi-cylindrical portion arranged with an axis parallel to the wall surface.

With this structure, it is possible to provide a sputtering device capable of increasing the plasma density near the target.

In the sputtering apparatus according to the above aspect, the high-frequency window may be arranged such that the semi-cylindrical portion protrudes from the wall surface into the inside of the vacuum container.

With this structure, the distance between the high-frequency window and the target can be reliably reduced, and the plasma density near the target can be further increased.

In the sputtering apparatus of the above aspect, the antenna may be disposed on a side closer to the target inside the semi-cylindrical part.

With this structure, plasma can be efficiently generated in the target.

In the sputtering apparatus according to the aspect of the invention, the antenna may pass through the antenna in a straight line parallel to a direction in which the object to be processed and the target face each other, and perpendicular to an extension direction of the antenna. The angle between the center of curvature of the semi-cylindrical portion and the straight line of the center of the antenna is 30 degrees or more and 60 degrees or less.

With this structure, the plasma density near the target can be reliably further increased.

In the sputtering apparatus of the above aspect, a plurality of the antennas may be arranged close to one of the high-frequency windows.

With this structure, even when a plurality of targets are caused to generate plasma, a compact sputtering apparatus capable of increasing the plasma density near each target can be easily constructed.

In the sputtering apparatus of the above aspect, the metal plate may be provided closer to the inside of the vacuum container than the dielectric body.

With this structure, the dielectric body is disposed outside the vacuum container with the semi-cylindrical metal plate interposed therebetween, and the dielectric body can be firmly supported.

In the sputtering apparatus of the above aspect, the dielectric body may be provided closer to the inside of the vacuum container than the metal plate.

With this structure, the vacuum container is airtightly sealed by the dielectric without interposing slits, thereby suppressing the generation of particles caused by the slits.

This disclosure is not limited to each of the embodiments described. Various changes can be made within the scope of the patent application. Embodiments obtained by appropriately combining the technical means disclosed in different embodiments are also included in this disclosure. technical scope.

1: Sputtering device 2. 102: Vacuum container 3. 103: Target stand 3a:Target stand body 5: Insulating flange 6:Backing board 6a: Inlet 6b: Outlet 6c:Flow path 7: Ground electrode (anode electrode) 8:Power supply 10: Plasma source 11, 21, 111: high frequency window 11a: Semi-cylindrical part 12, 23, 112: Metal plate 12a: Metal flange part 12b: Dielectric support part 12s, 112a: slit 13, 22, 113: Dielectric 14, 114: Antenna 14c, 114c: Center of the antenna 15:High frequency power supply 22a: Dielectric flange part 22b:Metal plate support part 106: Cooling mechanism C1: Center of curvature C2: Target center DP, DP1: lower evaluation position H: carrier H1: object to be processed L1, L2: size L3, L4, L5, L6, L7: distance S1: vertical line S2: straight line Tr: target UP, UP1: upper evaluation position θ: angle

FIG. 1 is a plan view of a sputtering apparatus according to Embodiment 1 of the present disclosure. 2 is a cross-sectional view of the main structure of the sputtering device when viewed from the axial direction. FIG. 3 is a diagram illustrating the main structure of Comparative Example 1. FIG. FIG. 4 is a graph showing an example of measurement results of plasma density with respect to the distance from the target center in each of the present embodiment product and Comparative Example 1. FIG. FIG. 5 is a graph showing an example of measurement results of the ratio of the plasma density to the power output with respect to the distance from the target center in each of the present embodiment product and Comparative Example 1. FIG. FIG. 6 is a diagram illustrating an example of an upper evaluation position and a lower evaluation position in the product of this embodiment. 7 is a diagram illustrating an example of an upper evaluation position and a lower evaluation position in Comparative Example 2. FIG. 8 is a diagram showing an example of measurement results of plasma density with respect to the horizontal distance from the antenna in each of the present embodiment product and Comparative Example 2. FIG. 9 is a diagram showing an example of the measurement results of the plasma density at the lower evaluation position with respect to the horizontal distance from the antenna in each of the present embodiment product and Comparative Example 2. FIG. 10 is a diagram illustrating a structural example of a main part of a sputtering apparatus according to Embodiment 2 of the present disclosure. FIG. 11 is a diagram showing an example of measurement results of plasma density with respect to the horizontal distance from the antenna when the angle in the sputtering apparatus shown in FIG. 10 is changed. FIG. 12 is a diagram illustrating the main structure of a sputtering apparatus according to Embodiment 3 of the present disclosure. FIG. 13 is a diagram illustrating the main structure of a sputtering apparatus according to Embodiment 4 of the present disclosure.

1: Sputtering device

2: Vacuum container

3:Target stand

3a:Target stand body

5: Insulating flange

6:Backing board

6a: Inlet

6b: Outlet

6c:Flow path

7: Ground electrode (anode electrode)

8:Power supply

10: Plasma source

11: High frequency window

11a: Semi-cylindrical part

12:Metal plate

12a: Metal flange part

12b: Dielectric support part

13:Dielectric

14:Antenna

14c: Center of antenna

C1: Center of curvature

H: carrier

H1: object to be processed

L1, L2: size

L3: distance

Tr: target

Claims (7)

A sputtering device including: The vacuum container contains the stage used to hold the objects to be processed; The target is arranged inside the vacuum container in a manner facing the object to be processed placed on the stage; A high-frequency window includes a metal plate with a slit and a dielectric overlapping the metal plate, and introduces a high-frequency magnetic field into the interior of the vacuum container in order to generate plasma inside the vacuum container, and provided on the wall surface of the vacuum container on which the target is mounted; and a linear antenna arranged outside the vacuum container close to the high-frequency window and generating the high-frequency magnetic field, The high-frequency window has a semi-cylindrical portion provided with an axis parallel to the wall surface. The sputtering device according to claim 1, wherein The high-frequency window is arranged such that the semi-cylindrical portion protrudes from the wall surface into the inside of the vacuum container. The sputtering device according to claim 1 or claim 2, wherein The antenna is disposed inside the semi-cylindrical portion on a side close to the target. The sputtering device according to claim 3, wherein The antenna is aligned with a straight line parallel to the opposing direction of the object to be processed and the target, and a straight line perpendicular to the extension direction of the antenna and passing through the center of curvature of the semi-cylindrical portion and the center of the antenna. The angle is 30 degrees or more and 60 degrees or less. The sputtering device according to any one of claims 1 to 4, wherein A plurality of the antennas are arranged close to one of the high-frequency windows. The sputtering device according to any one of claims 1 to 5, wherein The metal plate is provided closer to the inside of the vacuum container than the dielectric body. The sputtering device according to any one of claims 1 to 5, wherein The dielectric body is provided closer to the inside of the vacuum container than the metal plate.