JPWO2020179302A1 - - Google Patents

Info

Publication number
JPWO2020179302A1
JPWO2020179302A1 JP2021503467A JP2021503467A JPWO2020179302A1 JP WO2020179302 A1 JPWO2020179302 A1 JP WO2020179302A1 JP 2021503467 A JP2021503467 A JP 2021503467A JP 2021503467 A JP2021503467 A JP 2021503467A JP WO2020179302 A1 JPWO2020179302 A1 JP WO2020179302A1
Authority
JP
Japan
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP2021503467A
Other versions
JP7536741B2 (ja
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Publication of JPWO2020179302A1 publication Critical patent/JPWO2020179302A1/ja
Application granted granted Critical
Publication of JP7536741B2 publication Critical patent/JP7536741B2/ja
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Classifications

    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/70—SSIS architectures; Circuits associated therewith
    • H04N25/76—Addressed sensors, e.g. MOS or CMOS sensors
    • H04N25/77—Pixel circuitry, e.g. memories, A/D converters, pixel amplifiers, shared circuits or shared components
    • H04N25/772—Pixel circuitry, e.g. memories, A/D converters, pixel amplifiers, shared circuits or shared components comprising A/D, V/T, V/F, I/T or I/F converters
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/60—Noise processing, e.g. detecting, correcting, reducing or removing noise
    • H04N25/617—Noise processing, e.g. detecting, correcting, reducing or removing noise for reducing electromagnetic interference, e.g. clocking noise
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/60—Noise processing, e.g. detecting, correcting, reducing or removing noise
    • H04N25/618—Noise processing, e.g. detecting, correcting, reducing or removing noise for random or high-frequency noise
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/60—Noise processing, e.g. detecting, correcting, reducing or removing noise
    • H04N25/62—Detection or reduction of noise due to excess charges produced by the exposure, e.g. smear, blooming, ghost image, crosstalk or leakage between pixels
    • H04N25/628—Detection or reduction of noise due to excess charges produced by the exposure, e.g. smear, blooming, ghost image, crosstalk or leakage between pixels for reducing horizontal stripes caused by saturated regions of CMOS sensors
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/70—SSIS architectures; Circuits associated therewith
    • H04N25/71—Charge-coupled device [CCD] sensors; Charge-transfer registers specially adapted for CCD sensors
    • H04N25/75—Circuitry for providing, modifying or processing image signals from the pixel array
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/70—SSIS architectures; Circuits associated therewith
    • H04N25/76—Addressed sensors, e.g. MOS or CMOS sensors
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/70—SSIS architectures; Circuits associated therewith
    • H04N25/76—Addressed sensors, e.g. MOS or CMOS sensors
    • H04N25/77—Pixel circuitry, e.g. memories, A/D converters, pixel amplifiers, shared circuits or shared components
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/70—SSIS architectures; Circuits associated therewith
    • H04N25/76—Addressed sensors, e.g. MOS or CMOS sensors
    • H04N25/78—Readout circuits for addressed sensors, e.g. output amplifiers or A/D converters
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/70—SSIS architectures; Circuits associated therewith
    • H04N25/79—Arrangements of circuitry being divided between different or multiple substrates, chips or circuit boards, e.g. stacked image sensors

Landscapes

  • Engineering & Computer Science (AREA)
  • Multimedia (AREA)
  • Signal Processing (AREA)
  • Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Transforming Light Signals Into Electric Signals (AREA)
  • Solid State Image Pick-Up Elements (AREA)
JP2021503467A 2019-03-07 2020-01-30 撮像装置 Active JP7536741B2 (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2019041793 2019-03-07
JP2019041793 2019-03-07
PCT/JP2020/003507 WO2020179302A1 (ja) 2019-03-07 2020-01-30 撮像装置

Publications (2)

Publication Number Publication Date
JPWO2020179302A1 true JPWO2020179302A1 (ja) 2020-09-10
JP7536741B2 JP7536741B2 (ja) 2024-08-20

Family

ID=72338271

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2021503467A Active JP7536741B2 (ja) 2019-03-07 2020-01-30 撮像装置

Country Status (6)

Country Link
US (2) US11843892B2 (ja)
EP (1) EP3937483A4 (ja)
JP (1) JP7536741B2 (ja)
KR (1) KR20210133968A (ja)
CN (1) CN113348662A (ja)
WO (1) WO2020179302A1 (ja)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2022168704A (ja) * 2021-04-26 2022-11-08 ソニーセミコンダクタソリューションズ株式会社 撮像装置
WO2023188868A1 (ja) * 2022-03-30 2023-10-05 ソニーセミコンダクタソリューションズ株式会社 リニアセンサ

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5862126B2 (ja) 2011-09-06 2016-02-16 ソニー株式会社 撮像素子および方法、並びに、撮像装置
JP6108878B2 (ja) 2013-03-01 2017-04-05 キヤノン株式会社 撮像装置、撮像装置の駆動方法、撮像システム、撮像システムの駆動方法
JP6386722B2 (ja) * 2013-11-26 2018-09-05 キヤノン株式会社 撮像素子、撮像装置及び携帯電話機
JP6413235B2 (ja) 2013-12-06 2018-10-31 株式会社ニコン 撮像素子および撮像装置
WO2016009832A1 (ja) * 2014-07-14 2016-01-21 ソニー株式会社 比較器、ａｄ変換器、固体撮像装置、電子機器、および比較器の制御方法
JP2016092662A (ja) * 2014-11-07 2016-05-23 ソニー株式会社 処理装置、処理方法、イメージセンサ、及び、電子機器
KR102351736B1 (ko) 2016-08-22 2022-01-17 소니 세미컨덕터 솔루션즈 가부시키가이샤 고체 촬상 장치 및 그 구동 방법, 및 전자 기기
JP2018170703A (ja) 2017-03-30 2018-11-01 キヤノン株式会社 撮像素子、撮像装置、及び撮像素子の制御方法
JP2018186478A (ja) 2017-04-25 2018-11-22 ソニーセミコンダクタソリューションズ株式会社 固体撮像素子、撮像装置、および、固体撮像素子の制御方法

Also Published As

Publication number Publication date
WO2020179302A1 (ja) 2020-09-10
JP7536741B2 (ja) 2024-08-20
EP3937483A4 (en) 2022-03-30
US20240064438A1 (en) 2024-02-22
US20220053156A1 (en) 2022-02-17
US11843892B2 (en) 2023-12-12
KR20210133968A (ko) 2021-11-08
EP3937483A1 (en) 2022-01-12
CN113348662A (zh) 2021-09-03

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