JPWO2020085291A1 - 炭素−金属構造体および炭素−金属構造体の製造方法 - Google Patents
炭素−金属構造体および炭素−金属構造体の製造方法 Download PDFInfo
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Abstract
Description
次に、図2に基づいて、本発明の実施形態に係るCNTデバイス1の製造方法の一例について、詳細に説明する。
本発明の実施例1として、本発明の実施形態に係るCNTデバイスの製造方法(図2)より、X線装置のエミッタに適用可能なCNTデバイス1a、1bを製造した。この実施例では、耐熱凹凸基板6としてSi基板、金属台座4としてφ6mm厚さ4.5mmの銅台座、ろう材としてAg−Cu合金を用いた。また、触媒7はFeを用い、担体層8はAlOxを用いた。
実施例2では、Ag−Cuろう材層の厚さが26.7μmのCNTデバイス11を作製した。この実施例では、耐熱凹凸基板6としてSi基板、金属台座4としてφ6mm厚さ4.5mmの銅台座を用いた。なお、実施例2の説明において、実施例1と同様の工程(STEP1〜STEP3の工程)については、詳細な説明を省略する(実施例3〜7も同様である)。
実施例3では、Agろう材層の厚さが35.3μmのCNTデバイス12を作製した。この実施例では、ろう材の種類が異なることを除いて、実施例2と同様の方法でCNTデバイス12を作製した。
実施例4では、ろう付け時間の異なる3つのCNTデバイス13a〜13cを作製した。この実施例では、ろう材層の厚さとろう付け温度とろう付け時間が異なることを除いて、実施例1と同様の方法でCNTデバイス13a〜13cを作製した。
実施例5では、Ag−Cuろう材層の厚さの異なる3つのCNTデバイス14a〜14cを作製した。
実施例6では、ろう付け温度とろう付け時間の異なる2つのCNTデバイス15a、15bを作製した。
実施例7のCNTデバイス16a、16bは、図17に示すように、CNT層2上のろう材層3に複数の金属台座4を配置して、金属台座4にCNT層2をろう付けしたものである。
比較例のCNTデバイス17は、CNT層2の表面に直接集電体(銅薄膜18)を設けたものである。
参考例のCNTデバイス19a、19bは、平滑な耐熱基板6'上にCNT層2'を形成したものである。
次に、図23に基づいて、本発明の実施形態に係るCNTデバイス1の製造方法の他例について、詳細に説明する。なお、図2と同様のものには、同一符号を引用する等により詳細な説明を適宜省略し、主に図2との差異点を中心に説明する。
実施例8のCNTデバイス20は、実施例7と同様に、CNT層2上のろう材層3(実施例8では第2ろう材層32)に複数の金属台座4を配置して、金属台座4にCNT層2をろう付けしたものである。
Claims (16)
- 繊維状炭素を含む炭素膜層と、
前記炭素膜層に直接備えられるろう材層と、
前記ろう材層を介して前記炭素膜層に備えられる金属台座と、を備える炭素−金属構造体。 - 前記炭素膜層は、表面に平均高さ1μm〜100μmで高さ/間隔比が1/5〜5/1の凹凸を備える、請求項1に記載の炭素−金属構造体。
- 前記炭素膜層は、予め基板上に形成された層であり、
前記ろう材層は、前記炭素膜層の前記基板と接した面と反対側の端部に形成された層である、請求項1または請求項2に記載の炭素−金属構造体。 - 前記ろう材層は、金属ろう材により形成される層であり、
前記炭素膜層と前記ろう材層との界面には、前記炭素膜層に前記ろう材層を形成するろう材がしみ込んだ混合層が形成された、請求項1から請求項3のいずれか1項に記載の炭素−金属構造体。 - 前記ろう材層は、炭素膜層側に形成されている第1ろう材層と、金属台座側に形成され当該第1ろう材層よりも低融点の第2ろう材層と、を有した多層構造である、請求項1から請求項4の何れか1項に記載の炭素−金属構造体。
- 前記ろう材層の厚さは、1μm以上であり、50μm以下である請求項1から請求項5のいずれか1項に記載の炭素−金属構造体。
- 請求項1から請求項6のいずれか1項に記載の炭素−金属構造体を備える、電子エミッタ。
- 請求項7に記載の電子エミッタを備える、X線管。
- 基板に繊維状炭素を含む炭素膜層を形成する工程と、
前記基板に形成された炭素膜層にろう材層を形成する工程と、
前記炭素膜層に、前記ろう材層を介して金属台座をろう付けする工程と、
前記炭素膜層から前記基板を取り除く工程と、を有する炭素−金属構造体の製造方法。 - 前記ろう材層は、前記炭素膜層に蒸着された金属ろう材を含む、請求項9に記載の炭素−金属構造体の製造方法。
- 基板に繊維状炭素を含む炭素膜層を形成する工程と、
前記基板に形成された炭素膜層を支持する金属台座にろう材層を形成する工程と、
前記炭素膜層に、前記ろう材層を介して金属台座をろう付けする工程と、
前記炭素膜層から前記基板を取り除く工程と、を有する炭素−金属構造体の製造方法。 - 前記ろう材層は、炭素膜層側に形成される第1ろう材層と、金属台座側に形成され当該第1ろう材層よりも低融点の第2ろう材層と、を有する多層構造である、請求項9から請求項11の何れか1項に記載の炭素−金属構造体の製造方法。
- 前記炭素膜層を、化学気相成長法により前記基板に形成する、請求項9から請求項12のいずれか1項に記載の炭素−金属構造体の製造方法。
- 前記基板は、表面に平均高さ1μm〜100μmで高さ/間隔比が1/5〜5/1の凹凸を備える、請求項9から請求項13のいずれか1項に記載の炭素−金属構造体の製造方法。
- 前記炭素膜層から取り除かれた基板を、他の炭素−金属構造体の炭素膜層を形成する基板として再利用する、請求項9から請求項14のいずれか1項に記載の炭素−金属構造体の製造方法。
- 前記炭素膜層に、前記ろう材層を介して複数の金属台座をろう付けする、請求項9から請求項15のいずれか1項に記載の炭素−金属構造体の製造方法。
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