JPWO2020071204A1 - Photosensitive resin composition, manufacturing method of pattern cured product, cured product, interlayer insulating film, cover coat layer, surface protective film and electronic components - Google Patents
Photosensitive resin composition, manufacturing method of pattern cured product, cured product, interlayer insulating film, cover coat layer, surface protective film and electronic components Download PDFInfo
- Publication number
- JPWO2020071204A1 JPWO2020071204A1 JP2020550332A JP2020550332A JPWO2020071204A1 JP WO2020071204 A1 JPWO2020071204 A1 JP WO2020071204A1 JP 2020550332 A JP2020550332 A JP 2020550332A JP 2020550332 A JP2020550332 A JP 2020550332A JP WO2020071204 A1 JPWO2020071204 A1 JP WO2020071204A1
- Authority
- JP
- Japan
- Prior art keywords
- group
- photosensitive resin
- resin composition
- component
- formula
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000011342 resin composition Substances 0.000 title claims abstract description 62
- 239000010410 layer Substances 0.000 title claims description 28
- 238000004519 manufacturing process Methods 0.000 title claims description 21
- 239000011229 interlayer Substances 0.000 title claims description 17
- 230000001681 protective effect Effects 0.000 title claims description 17
- 150000001875 compounds Chemical class 0.000 claims abstract description 34
- 239000000178 monomer Substances 0.000 claims abstract description 18
- 239000004642 Polyimide Substances 0.000 claims abstract description 14
- 229920001721 polyimide Polymers 0.000 claims abstract description 14
- 239000002904 solvent Substances 0.000 claims abstract description 14
- 239000002243 precursor Substances 0.000 claims abstract description 12
- 239000003999 initiator Substances 0.000 claims abstract description 6
- 125000005577 anthracene group Chemical group 0.000 claims abstract description 4
- 125000004432 carbon atom Chemical group C* 0.000 claims description 56
- 229920005989 resin Polymers 0.000 claims description 54
- 239000011347 resin Substances 0.000 claims description 54
- 125000001931 aliphatic group Chemical group 0.000 claims description 26
- 239000000758 substrate Substances 0.000 claims description 23
- 125000003118 aryl group Chemical group 0.000 claims description 21
- 125000000217 alkyl group Chemical group 0.000 claims description 17
- 238000010438 heat treatment Methods 0.000 claims description 16
- 125000004435 hydrogen atom Chemical group [H]* 0.000 claims description 15
- 238000001035 drying Methods 0.000 claims description 8
- 125000003545 alkoxy group Chemical group 0.000 claims description 7
- 125000005843 halogen group Chemical group 0.000 claims description 6
- 239000003960 organic solvent Substances 0.000 claims description 6
- GJNKQJAJXSUJBO-UHFFFAOYSA-N 9,10-diethoxyanthracene Chemical compound C1=CC=C2C(OCC)=C(C=CC=C3)C3=C(OCC)C2=C1 GJNKQJAJXSUJBO-UHFFFAOYSA-N 0.000 claims description 4
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims description 4
- 125000004429 atom Chemical group 0.000 claims description 4
- 229910052799 carbon Inorganic materials 0.000 claims description 4
- 125000001072 heteroaryl group Chemical group 0.000 claims description 4
- 239000003505 polymerization initiator Substances 0.000 claims description 4
- 238000012719 thermal polymerization Methods 0.000 claims description 4
- BWSIKJKXQWLTLS-UHFFFAOYSA-N 1,2-dimethoxyanthracene Chemical compound C1=CC=CC2=CC3=C(OC)C(OC)=CC=C3C=C21 BWSIKJKXQWLTLS-UHFFFAOYSA-N 0.000 claims description 3
- KLQVBEXCUCUXDP-UHFFFAOYSA-N 1-(2,2-diethoxyethyl)anthracene Chemical compound C(C)OC(CC1=CC=CC2=CC3=CC=CC=C3C=C12)OCC KLQVBEXCUCUXDP-UHFFFAOYSA-N 0.000 claims description 3
- 125000002924 primary amino group Chemical group [H]N([H])* 0.000 claims description 3
- 239000000047 product Substances 0.000 description 48
- 238000011161 development Methods 0.000 description 27
- -1 bis (trifluoromethyl) methylene group Chemical group 0.000 description 21
- ZMXDDKWLCZADIW-UHFFFAOYSA-N N,N-Dimethylformamide Chemical compound CN(C)C=O ZMXDDKWLCZADIW-UHFFFAOYSA-N 0.000 description 18
- BGTOWKSIORTVQH-UHFFFAOYSA-N cyclopentanone Chemical compound O=C1CCCC1 BGTOWKSIORTVQH-UHFFFAOYSA-N 0.000 description 16
- 239000003112 inhibitor Substances 0.000 description 15
- 239000006087 Silane Coupling Agent Substances 0.000 description 13
- 238000006116 polymerization reaction Methods 0.000 description 13
- 125000002496 methyl group Chemical group [H]C([H])([H])* 0.000 description 11
- SECXISVLQFMRJM-UHFFFAOYSA-N N-Methylpyrrolidone Chemical compound CN1CCCC1=O SECXISVLQFMRJM-UHFFFAOYSA-N 0.000 description 10
- 239000003431 cross linking reagent Substances 0.000 description 10
- JEIPFZHSYJVQDO-UHFFFAOYSA-N iron(III) oxide Inorganic materials O=[Fe]O[Fe]=O JEIPFZHSYJVQDO-UHFFFAOYSA-N 0.000 description 10
- 239000003795 chemical substances by application Substances 0.000 description 9
- 238000000034 method Methods 0.000 description 9
- 239000004065 semiconductor Substances 0.000 description 9
- 239000004094 surface-active agent Substances 0.000 description 9
- IAZDPXIOMUYVGZ-UHFFFAOYSA-N Dimethylsulphoxide Chemical compound CS(C)=O IAZDPXIOMUYVGZ-UHFFFAOYSA-N 0.000 description 8
- 238000001723 curing Methods 0.000 description 8
- 238000005259 measurement Methods 0.000 description 8
- LLHKCFNBLRBOGN-UHFFFAOYSA-N propylene glycol methyl ether acetate Chemical compound COCC(C)OC(C)=O LLHKCFNBLRBOGN-UHFFFAOYSA-N 0.000 description 8
- 125000001495 ethyl group Chemical group [H]C([H])([H])C([H])([H])* 0.000 description 7
- 239000000203 mixture Substances 0.000 description 7
- 150000002923 oximes Chemical class 0.000 description 7
- 230000003449 preventive effect Effects 0.000 description 7
- 239000000126 substance Substances 0.000 description 7
- YEJRWHAVMIAJKC-UHFFFAOYSA-N 4-Butyrolactone Chemical compound O=C1CCCO1 YEJRWHAVMIAJKC-UHFFFAOYSA-N 0.000 description 6
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 description 6
- OKKJLVBELUTLKV-UHFFFAOYSA-N Methanol Chemical compound OC OKKJLVBELUTLKV-UHFFFAOYSA-N 0.000 description 6
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 6
- WYURNTSHIVDZCO-UHFFFAOYSA-N Tetrahydrofuran Chemical compound C1CCOC1 WYURNTSHIVDZCO-UHFFFAOYSA-N 0.000 description 6
- YXFVVABEGXRONW-UHFFFAOYSA-N Toluene Chemical compound CC1=CC=CC=C1 YXFVVABEGXRONW-UHFFFAOYSA-N 0.000 description 6
- 125000002029 aromatic hydrocarbon group Chemical group 0.000 description 6
- 238000006243 chemical reaction Methods 0.000 description 6
- 125000003055 glycidyl group Chemical group C(C1CO1)* 0.000 description 6
- 125000002887 hydroxy group Chemical group [H]O* 0.000 description 6
- 238000000059 patterning Methods 0.000 description 6
- 125000001997 phenyl group Chemical group [H]C1=C([H])C([H])=C(*)C([H])=C1[H] 0.000 description 6
- 229910052710 silicon Inorganic materials 0.000 description 6
- 239000010703 silicon Substances 0.000 description 6
- ISAOCJYIOMOJEB-UHFFFAOYSA-N benzoin Chemical class C=1C=CC=CC=1C(O)C(=O)C1=CC=CC=C1 ISAOCJYIOMOJEB-UHFFFAOYSA-N 0.000 description 5
- 125000003178 carboxy group Chemical group [H]OC(*)=O 0.000 description 5
- 238000000576 coating method Methods 0.000 description 5
- 239000004020 conductor Substances 0.000 description 5
- 239000007822 coupling agent Substances 0.000 description 5
- 230000008569 process Effects 0.000 description 5
- ULRPISSMEBPJLN-UHFFFAOYSA-N 2h-tetrazol-5-amine Chemical compound NC1=NN=NN1 ULRPISSMEBPJLN-UHFFFAOYSA-N 0.000 description 4
- KFZMGEQAYNKOFK-UHFFFAOYSA-N Isopropanol Chemical compound CC(C)O KFZMGEQAYNKOFK-UHFFFAOYSA-N 0.000 description 4
- MWPLVEDNUUSJAV-UHFFFAOYSA-N anthracene Chemical compound C1=CC=CC2=CC3=CC=CC=C3C=C21 MWPLVEDNUUSJAV-UHFFFAOYSA-N 0.000 description 4
- 230000015572 biosynthetic process Effects 0.000 description 4
- 239000011248 coating agent Substances 0.000 description 4
- JHIVVAPYMSGYDF-UHFFFAOYSA-N cyclohexanone Chemical compound O=C1CCCCC1 JHIVVAPYMSGYDF-UHFFFAOYSA-N 0.000 description 4
- 238000009792 diffusion process Methods 0.000 description 4
- LZCLXQDLBQLTDK-UHFFFAOYSA-N ethyl 2-hydroxypropanoate Chemical compound CCOC(=O)C(C)O LZCLXQDLBQLTDK-UHFFFAOYSA-N 0.000 description 4
- 239000012299 nitrogen atmosphere Substances 0.000 description 4
- 230000035945 sensitivity Effects 0.000 description 4
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 4
- MYWOJODOMFBVCB-UHFFFAOYSA-N 1,2,6-trimethylphenanthrene Chemical compound CC1=CC=C2C3=CC(C)=CC=C3C=CC2=C1C MYWOJODOMFBVCB-UHFFFAOYSA-N 0.000 description 3
- XMNIXWIUMCBBBL-UHFFFAOYSA-N 2-(2-phenylpropan-2-ylperoxy)propan-2-ylbenzene Chemical compound C=1C=CC=CC=1C(C)(C)OOC(C)(C)C1=CC=CC=C1 XMNIXWIUMCBBBL-UHFFFAOYSA-N 0.000 description 3
- LVNLBBGBASVLLI-UHFFFAOYSA-N 3-triethoxysilylpropylurea Chemical compound CCO[Si](OCC)(OCC)CCCNC(N)=O LVNLBBGBASVLLI-UHFFFAOYSA-N 0.000 description 3
- QQGYZOYWNCKGEK-UHFFFAOYSA-N 5-[(1,3-dioxo-2-benzofuran-5-yl)oxy]-2-benzofuran-1,3-dione Chemical compound C1=C2C(=O)OC(=O)C2=CC(OC=2C=C3C(=O)OC(C3=CC=2)=O)=C1 QQGYZOYWNCKGEK-UHFFFAOYSA-N 0.000 description 3
- FXHOOIRPVKKKFG-UHFFFAOYSA-N N,N-Dimethylacetamide Chemical compound CN(C)C(C)=O FXHOOIRPVKKKFG-UHFFFAOYSA-N 0.000 description 3
- NIXOWILDQLNWCW-UHFFFAOYSA-N acrylic acid group Chemical group C(C=C)(=O)O NIXOWILDQLNWCW-UHFFFAOYSA-N 0.000 description 3
- 239000012298 atmosphere Substances 0.000 description 3
- RWCCWEUUXYIKHB-UHFFFAOYSA-N benzophenone Chemical compound C=1C=CC=CC=1C(=O)C1=CC=CC=C1 RWCCWEUUXYIKHB-UHFFFAOYSA-N 0.000 description 3
- 239000012965 benzophenone Substances 0.000 description 3
- 230000000052 comparative effect Effects 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- 238000005530 etching Methods 0.000 description 3
- 238000005227 gel permeation chromatography Methods 0.000 description 3
- 239000004615 ingredient Substances 0.000 description 3
- 125000001449 isopropyl group Chemical group [H]C([H])([H])C([H])(*)C([H])([H])[H] 0.000 description 3
- 238000013035 low temperature curing Methods 0.000 description 3
- 239000000463 material Substances 0.000 description 3
- 238000002156 mixing Methods 0.000 description 3
- 125000004123 n-propyl group Chemical group [H]C([H])([H])C([H])([H])C([H])([H])* 0.000 description 3
- 125000000962 organic group Chemical group 0.000 description 3
- 229920005575 poly(amic acid) Polymers 0.000 description 3
- 238000003786 synthesis reaction Methods 0.000 description 3
- 125000000999 tert-butyl group Chemical group [H]C([H])([H])C(*)(C([H])([H])[H])C([H])([H])[H] 0.000 description 3
- NAWXUBYGYWOOIX-SFHVURJKSA-N (2s)-2-[[4-[2-(2,4-diaminoquinazolin-6-yl)ethyl]benzoyl]amino]-4-methylidenepentanedioic acid Chemical compound C1=CC2=NC(N)=NC(N)=C2C=C1CCC1=CC=C(C(=O)N[C@@H](CC(=C)C(O)=O)C(O)=O)C=C1 NAWXUBYGYWOOIX-SFHVURJKSA-N 0.000 description 2
- AZQWKYJCGOJGHM-UHFFFAOYSA-N 1,4-benzoquinone Chemical compound O=C1C=CC(=O)C=C1 AZQWKYJCGOJGHM-UHFFFAOYSA-N 0.000 description 2
- ASOKPJOREAFHNY-UHFFFAOYSA-N 1-Hydroxybenzotriazole Chemical compound C1=CC=C2N(O)N=NC2=C1 ASOKPJOREAFHNY-UHFFFAOYSA-N 0.000 description 2
- 239000012956 1-hydroxycyclohexylphenyl-ketone Substances 0.000 description 2
- ARXJGSRGQADJSQ-UHFFFAOYSA-N 1-methoxypropan-2-ol Chemical compound COCC(C)O ARXJGSRGQADJSQ-UHFFFAOYSA-N 0.000 description 2
- RBGUKBSLNOTVCD-UHFFFAOYSA-N 1-methylanthracene-9,10-dione Chemical compound O=C1C2=CC=CC=C2C(=O)C2=C1C=CC=C2C RBGUKBSLNOTVCD-UHFFFAOYSA-N 0.000 description 2
- LEJBBGNFPAFPKQ-UHFFFAOYSA-N 2-(2-prop-2-enoyloxyethoxy)ethyl prop-2-enoate Chemical compound C=CC(=O)OCCOCCOC(=O)C=C LEJBBGNFPAFPKQ-UHFFFAOYSA-N 0.000 description 2
- BMVJLODMRABQES-UHFFFAOYSA-N 2-(aminomethyl)-3-trimethoxysilylpropan-1-ol Chemical compound OCC(C[Si](OC)(OC)OC)CN BMVJLODMRABQES-UHFFFAOYSA-N 0.000 description 2
- XFCMNSHQOZQILR-UHFFFAOYSA-N 2-[2-(2-methylprop-2-enoyloxy)ethoxy]ethyl 2-methylprop-2-enoate Chemical compound CC(=C)C(=O)OCCOCCOC(=O)C(C)=C XFCMNSHQOZQILR-UHFFFAOYSA-N 0.000 description 2
- INQDDHNZXOAFFD-UHFFFAOYSA-N 2-[2-(2-prop-2-enoyloxyethoxy)ethoxy]ethyl prop-2-enoate Chemical compound C=CC(=O)OCCOCCOCCOC(=O)C=C INQDDHNZXOAFFD-UHFFFAOYSA-N 0.000 description 2
- HCLJOFJIQIJXHS-UHFFFAOYSA-N 2-[2-[2-(2-prop-2-enoyloxyethoxy)ethoxy]ethoxy]ethyl prop-2-enoate Chemical compound C=CC(=O)OCCOCCOCCOCCOC(=O)C=C HCLJOFJIQIJXHS-UHFFFAOYSA-N 0.000 description 2
- BQZJOQXSCSZQPS-UHFFFAOYSA-N 2-methoxy-1,2-diphenylethanone Chemical compound C=1C=CC=CC=1C(OC)C(=O)C1=CC=CC=C1 BQZJOQXSCSZQPS-UHFFFAOYSA-N 0.000 description 2
- KTALPKYXQZGAEG-UHFFFAOYSA-N 2-propan-2-ylthioxanthen-9-one Chemical compound C1=CC=C2C(=O)C3=CC(C(C)C)=CC=C3SC2=C1 KTALPKYXQZGAEG-UHFFFAOYSA-N 0.000 description 2
- VVBLNCFGVYUYGU-UHFFFAOYSA-N 4,4'-Bis(dimethylamino)benzophenone Chemical compound C1=CC(N(C)C)=CC=C1C(=O)C1=CC=C(N(C)C)C=C1 VVBLNCFGVYUYGU-UHFFFAOYSA-N 0.000 description 2
- VHYFNPMBLIVWCW-UHFFFAOYSA-N 4-Dimethylaminopyridine Chemical compound CN(C)C1=CC=NC=C1 VHYFNPMBLIVWCW-UHFFFAOYSA-N 0.000 description 2
- KSMGAOMUPSQGTB-UHFFFAOYSA-N 9,10-dibutoxyanthracene Chemical compound C1=CC=C2C(OCCCC)=C(C=CC=C3)C3=C(OCCCC)C2=C1 KSMGAOMUPSQGTB-UHFFFAOYSA-N 0.000 description 2
- YYVYAPXYZVYDHN-UHFFFAOYSA-N 9,10-phenanthroquinone Chemical compound C1=CC=C2C(=O)C(=O)C3=CC=CC=C3C2=C1 YYVYAPXYZVYDHN-UHFFFAOYSA-N 0.000 description 2
- KWOLFJPFCHCOCG-UHFFFAOYSA-N Acetophenone Chemical compound CC(=O)C1=CC=CC=C1 KWOLFJPFCHCOCG-UHFFFAOYSA-N 0.000 description 2
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 2
- 229910000881 Cu alloy Inorganic materials 0.000 description 2
- RTZKZFJDLAIYFH-UHFFFAOYSA-N Diethyl ether Chemical compound CCOCC RTZKZFJDLAIYFH-UHFFFAOYSA-N 0.000 description 2
- GUUVPOWQJOLRAS-UHFFFAOYSA-N Diphenyl disulfide Chemical compound C=1C=CC=CC=1SSC1=CC=CC=C1 GUUVPOWQJOLRAS-UHFFFAOYSA-N 0.000 description 2
- QIGBRXMKCJKVMJ-UHFFFAOYSA-N Hydroquinone Chemical compound OC1=CC=C(O)C=C1 QIGBRXMKCJKVMJ-UHFFFAOYSA-N 0.000 description 2
- WOBHKFSMXKNTIM-UHFFFAOYSA-N Hydroxyethyl methacrylate Chemical compound CC(=C)C(=O)OCCO WOBHKFSMXKNTIM-UHFFFAOYSA-N 0.000 description 2
- OAZWDJGLIYNYMU-UHFFFAOYSA-N Leucocrystal Violet Chemical compound C1=CC(N(C)C)=CC=C1C(C=1C=CC(=CC=1)N(C)C)C1=CC=C(N(C)C)C=C1 OAZWDJGLIYNYMU-UHFFFAOYSA-N 0.000 description 2
- KEQFTVQCIQJIQW-UHFFFAOYSA-N N-Phenyl-2-naphthylamine Chemical compound C=1C=C2C=CC=CC2=CC=1NC1=CC=CC=C1 KEQFTVQCIQJIQW-UHFFFAOYSA-N 0.000 description 2
- UFWIBTONFRDIAS-UHFFFAOYSA-N Naphthalene Chemical compound C1=CC=CC2=CC=CC=C21 UFWIBTONFRDIAS-UHFFFAOYSA-N 0.000 description 2
- CTQNGGLPUBDAKN-UHFFFAOYSA-N O-Xylene Chemical compound CC1=CC=CC=C1C CTQNGGLPUBDAKN-UHFFFAOYSA-N 0.000 description 2
- 206010034972 Photosensitivity reaction Diseases 0.000 description 2
- 241000232219 Platanista Species 0.000 description 2
- 239000004793 Polystyrene Substances 0.000 description 2
- 244000028419 Styrax benzoin Species 0.000 description 2
- 235000000126 Styrax benzoin Nutrition 0.000 description 2
- 235000008411 Sumatra benzointree Nutrition 0.000 description 2
- 239000000853 adhesive Substances 0.000 description 2
- 230000001070 adhesive effect Effects 0.000 description 2
- 125000003277 amino group Chemical group 0.000 description 2
- 229960002130 benzoin Drugs 0.000 description 2
- QRUDEWIWKLJBPS-UHFFFAOYSA-N benzotriazole Chemical compound C1=CC=C2N[N][N]C2=C1 QRUDEWIWKLJBPS-UHFFFAOYSA-N 0.000 description 2
- 239000012964 benzotriazole Substances 0.000 description 2
- QUKGYYKBILRGFE-UHFFFAOYSA-N benzyl acetate Chemical compound CC(=O)OCC1=CC=CC=C1 QUKGYYKBILRGFE-UHFFFAOYSA-N 0.000 description 2
- 125000001797 benzyl group Chemical group [H]C1=C([H])C([H])=C(C([H])=C1[H])C([H])([H])* 0.000 description 2
- MQDJYUACMFCOFT-UHFFFAOYSA-N bis[2-(1-hydroxycyclohexyl)phenyl]methanone Chemical compound C=1C=CC=C(C(=O)C=2C(=CC=CC=2)C2(O)CCCCC2)C=1C1(O)CCCCC1 MQDJYUACMFCOFT-UHFFFAOYSA-N 0.000 description 2
- VYHBFRJRBHMIQZ-UHFFFAOYSA-N bis[4-(diethylamino)phenyl]methanone Chemical compound C1=CC(N(CC)CC)=CC=C1C(=O)C1=CC=C(N(CC)CC)C=C1 VYHBFRJRBHMIQZ-UHFFFAOYSA-N 0.000 description 2
- DKPFZGUDAPQIHT-UHFFFAOYSA-N butyl acetate Chemical compound CCCCOC(C)=O DKPFZGUDAPQIHT-UHFFFAOYSA-N 0.000 description 2
- ANTNWJLVXZNBSU-UHFFFAOYSA-N butyl-dihydroxy-phenylsilane Chemical compound CCCC[Si](O)(O)C1=CC=CC=C1 ANTNWJLVXZNBSU-UHFFFAOYSA-N 0.000 description 2
- 239000004202 carbamide Substances 0.000 description 2
- 229910052802 copper Inorganic materials 0.000 description 2
- 239000010949 copper Substances 0.000 description 2
- 150000007973 cyanuric acids Chemical class 0.000 description 2
- 238000000354 decomposition reaction Methods 0.000 description 2
- 230000018044 dehydration Effects 0.000 description 2
- 238000006297 dehydration reaction Methods 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 239000012153 distilled water Substances 0.000 description 2
- 230000032050 esterification Effects 0.000 description 2
- 238000005886 esterification reaction Methods 0.000 description 2
- 125000001301 ethoxy group Chemical group [H]C([H])([H])C([H])([H])O* 0.000 description 2
- 229940116333 ethyl lactate Drugs 0.000 description 2
- 229910052731 fluorine Inorganic materials 0.000 description 2
- 125000001153 fluoro group Chemical group F* 0.000 description 2
- 235000019382 gum benzoic Nutrition 0.000 description 2
- 239000007788 liquid Substances 0.000 description 2
- AMXOYNBUYSYVKV-UHFFFAOYSA-M lithium bromide Chemical compound [Li+].[Br-] AMXOYNBUYSYVKV-UHFFFAOYSA-M 0.000 description 2
- 125000000956 methoxy group Chemical group [H]C([H])([H])O* 0.000 description 2
- 125000004108 n-butyl group Chemical group [H]C([H])([H])C([H])([H])C([H])([H])C([H])([H])* 0.000 description 2
- 229910052757 nitrogen Inorganic materials 0.000 description 2
- 238000002161 passivation Methods 0.000 description 2
- FDPIMTJIUBPUKL-UHFFFAOYSA-N pentan-3-one Chemical compound CCC(=O)CC FDPIMTJIUBPUKL-UHFFFAOYSA-N 0.000 description 2
- 230000036211 photosensitivity Effects 0.000 description 2
- 239000003504 photosensitizing agent Substances 0.000 description 2
- 229920002223 polystyrene Polymers 0.000 description 2
- WQGWDDDVZFFDIG-UHFFFAOYSA-N pyrogallol Chemical compound OC1=CC=CC(O)=C1O WQGWDDDVZFFDIG-UHFFFAOYSA-N 0.000 description 2
- 238000010526 radical polymerization reaction Methods 0.000 description 2
- 150000003254 radicals Chemical class 0.000 description 2
- 238000011160 research Methods 0.000 description 2
- GHMLBKRAJCXXBS-UHFFFAOYSA-N resorcinol Chemical compound OC1=CC=CC(O)=C1 GHMLBKRAJCXXBS-UHFFFAOYSA-N 0.000 description 2
- 238000007363 ring formation reaction Methods 0.000 description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- 238000003860 storage Methods 0.000 description 2
- 125000001424 substituent group Chemical group 0.000 description 2
- YRHRIQCWCFGUEQ-UHFFFAOYSA-N thioxanthen-9-one Chemical compound C1=CC=C2C(=O)C3=CC=CC=C3SC2=C1 YRHRIQCWCFGUEQ-UHFFFAOYSA-N 0.000 description 2
- 238000002834 transmittance Methods 0.000 description 2
- QAEDZJGFFMLHHQ-UHFFFAOYSA-N trifluoroacetic anhydride Chemical compound FC(F)(F)C(=O)OC(=O)C(F)(F)F QAEDZJGFFMLHHQ-UHFFFAOYSA-N 0.000 description 2
- 239000008096 xylene Substances 0.000 description 2
- FVQMJJQUGGVLEP-UHFFFAOYSA-N (2-methylpropan-2-yl)oxy 2-ethylhexaneperoxoate Chemical compound CCCCC(CC)C(=O)OOOC(C)(C)C FVQMJJQUGGVLEP-UHFFFAOYSA-N 0.000 description 1
- QEQBMZQFDDDTPN-UHFFFAOYSA-N (2-methylpropan-2-yl)oxy benzenecarboperoxoate Chemical compound CC(C)(C)OOOC(=O)C1=CC=CC=C1 QEQBMZQFDDDTPN-UHFFFAOYSA-N 0.000 description 1
- NOBYOEQUFMGXBP-UHFFFAOYSA-N (4-tert-butylcyclohexyl) (4-tert-butylcyclohexyl)oxycarbonyloxy carbonate Chemical compound C1CC(C(C)(C)C)CCC1OC(=O)OOC(=O)OC1CCC(C(C)(C)C)CC1 NOBYOEQUFMGXBP-UHFFFAOYSA-N 0.000 description 1
- FFJCNSLCJOQHKM-CLFAGFIQSA-N (z)-1-[(z)-octadec-9-enoxy]octadec-9-ene Chemical compound CCCCCCCC\C=C/CCCCCCCCOCCCCCCCC\C=C/CCCCCCCC FFJCNSLCJOQHKM-CLFAGFIQSA-N 0.000 description 1
- VBQCFYPTKHCPGI-UHFFFAOYSA-N 1,1-bis(2-methylpentan-2-ylperoxy)cyclohexane Chemical compound CCCC(C)(C)OOC1(OOC(C)(C)CCC)CCCCC1 VBQCFYPTKHCPGI-UHFFFAOYSA-N 0.000 description 1
- GJZFGDYLJLCGHT-UHFFFAOYSA-N 1,2-diethylthioxanthen-9-one Chemical compound C1=CC=C2C(=O)C3=C(CC)C(CC)=CC=C3SC2=C1 GJZFGDYLJLCGHT-UHFFFAOYSA-N 0.000 description 1
- IZUKQUVSCNEFMJ-UHFFFAOYSA-N 1,2-dinitrobenzene Chemical compound [O-][N+](=O)C1=CC=CC=C1[N+]([O-])=O IZUKQUVSCNEFMJ-UHFFFAOYSA-N 0.000 description 1
- MSAHTMIQULFMRG-UHFFFAOYSA-N 1,2-diphenyl-2-propan-2-yloxyethanone Chemical compound C=1C=CC=CC=1C(OC(C)C)C(=O)C1=CC=CC=C1 MSAHTMIQULFMRG-UHFFFAOYSA-N 0.000 description 1
- YFKBXYGUSOXJGS-UHFFFAOYSA-N 1,3-Diphenyl-2-propanone Chemical compound C=1C=CC=CC=1CC(=O)CC1=CC=CC=C1 YFKBXYGUSOXJGS-UHFFFAOYSA-N 0.000 description 1
- WDCYWAQPCXBPJA-UHFFFAOYSA-N 1,3-dinitrobenzene Chemical compound [O-][N+](=O)C1=CC=CC([N+]([O-])=O)=C1 WDCYWAQPCXBPJA-UHFFFAOYSA-N 0.000 description 1
- FYFDQJRXFWGIBS-UHFFFAOYSA-N 1,4-dinitrobenzene Chemical compound [O-][N+](=O)C1=CC=C([N+]([O-])=O)C=C1 FYFDQJRXFWGIBS-UHFFFAOYSA-N 0.000 description 1
- TUSDEZXZIZRFGC-UHFFFAOYSA-N 1-O-galloyl-3,6-(R)-HHDP-beta-D-glucose Natural products OC1C(O2)COC(=O)C3=CC(O)=C(O)C(O)=C3C3=C(O)C(O)=C(O)C=C3C(=O)OC1C(O)C2OC(=O)C1=CC(O)=C(O)C(O)=C1 TUSDEZXZIZRFGC-UHFFFAOYSA-N 0.000 description 1
- YLHUPYSUKYAIBW-UHFFFAOYSA-N 1-acetylpyrrolidin-2-one Chemical compound CC(=O)N1CCCC1=O YLHUPYSUKYAIBW-UHFFFAOYSA-N 0.000 description 1
- QLCFJROVGLBZQE-UHFFFAOYSA-N 1-butoxyanthracene Chemical compound C1=CC=C2C=C3C(OCCCC)=CC=CC3=CC2=C1 QLCFJROVGLBZQE-UHFFFAOYSA-N 0.000 description 1
- WJFKNYWRSNBZNX-UHFFFAOYSA-N 10H-phenothiazine Chemical compound C1=CC=C2NC3=CC=CC=C3SC2=C1 WJFKNYWRSNBZNX-UHFFFAOYSA-N 0.000 description 1
- XKNLMAXAQYNOQZ-UHFFFAOYSA-N 2,2-bis(hydroxymethyl)propane-1,3-diol;2-methylprop-2-enoic acid Chemical compound CC(=C)C(O)=O.CC(=C)C(O)=O.CC(=C)C(O)=O.CC(=C)C(O)=O.OCC(CO)(CO)CO XKNLMAXAQYNOQZ-UHFFFAOYSA-N 0.000 description 1
- GZBSIABKXVPBFY-UHFFFAOYSA-N 2,2-bis(hydroxymethyl)propane-1,3-diol;prop-2-enoic acid Chemical compound OC(=O)C=C.OC(=O)C=C.OC(=O)C=C.OC(=O)C=C.OCC(CO)(CO)CO GZBSIABKXVPBFY-UHFFFAOYSA-N 0.000 description 1
- KWVGIHKZDCUPEU-UHFFFAOYSA-N 2,2-dimethoxy-2-phenylacetophenone Chemical compound C=1C=CC=CC=1C(OC)(OC)C(=O)C1=CC=CC=C1 KWVGIHKZDCUPEU-UHFFFAOYSA-N 0.000 description 1
- NJJQKUCTKNDSPO-UHFFFAOYSA-N 2,4-diamino-1,5-diphenylpenta-1,4-dien-3-one Chemical compound C=1C=CC=CC=1C=C(N)C(=O)C(N)=CC1=CC=CC=C1 NJJQKUCTKNDSPO-UHFFFAOYSA-N 0.000 description 1
- YAAGDQQFXWZDPW-UHFFFAOYSA-N 2,6-bis[[4-(diethylamino)phenyl]methylidene]-4-phenylcyclohexan-1-one Chemical compound C1=CC(N(CC)CC)=CC=C1C=C(CC(C1)C=2C=CC=CC=2)C(=O)C1=CC1=CC=C(N(CC)CC)C=C1 YAAGDQQFXWZDPW-UHFFFAOYSA-N 0.000 description 1
- GBOJZXLCJZDBKO-UHFFFAOYSA-N 2-(2-chlorophenyl)-2-[2-(2-chlorophenyl)-4,5-diphenylimidazol-2-yl]-4,5-diphenylimidazole Chemical compound ClC1=CC=CC=C1C1(C2(N=C(C(=N2)C=2C=CC=CC=2)C=2C=CC=CC=2)C=2C(=CC=CC=2)Cl)N=C(C=2C=CC=CC=2)C(C=2C=CC=CC=2)=N1 GBOJZXLCJZDBKO-UHFFFAOYSA-N 0.000 description 1
- IEMBFTKNPXENSE-UHFFFAOYSA-N 2-(2-methylpentan-2-ylperoxy)propan-2-yl hydrogen carbonate Chemical compound CCCC(C)(C)OOC(C)(C)OC(O)=O IEMBFTKNPXENSE-UHFFFAOYSA-N 0.000 description 1
- BZTWCPPIAGYIHH-UHFFFAOYSA-N 2-(aminomethyl)-3-triethoxysilylpropan-1-ol Chemical compound OCC(C[Si](OCC)(OCC)OCC)CN BZTWCPPIAGYIHH-UHFFFAOYSA-N 0.000 description 1
- PTTPXKJBFFKCEK-UHFFFAOYSA-N 2-Methyl-4-heptanone Chemical compound CC(C)CC(=O)CC(C)C PTTPXKJBFFKCEK-UHFFFAOYSA-N 0.000 description 1
- HWSSEYVMGDIFMH-UHFFFAOYSA-N 2-[2-[2-(2-methylprop-2-enoyloxy)ethoxy]ethoxy]ethyl 2-methylprop-2-enoate Chemical compound CC(=C)C(=O)OCCOCCOCCOC(=O)C(C)=C HWSSEYVMGDIFMH-UHFFFAOYSA-N 0.000 description 1
- LTHJXDSHSVNJKG-UHFFFAOYSA-N 2-[2-[2-[2-(2-methylprop-2-enoyloxy)ethoxy]ethoxy]ethoxy]ethyl 2-methylprop-2-enoate Chemical compound CC(=C)C(=O)OCCOCCOCCOCCOC(=O)C(C)=C LTHJXDSHSVNJKG-UHFFFAOYSA-N 0.000 description 1
- TXBCBTDQIULDIA-UHFFFAOYSA-N 2-[[3-hydroxy-2,2-bis(hydroxymethyl)propoxy]methyl]-2-(hydroxymethyl)propane-1,3-diol Chemical compound OCC(CO)(CO)COCC(CO)(CO)CO TXBCBTDQIULDIA-UHFFFAOYSA-N 0.000 description 1
- BTSXEIQFVFMZLH-UHFFFAOYSA-N 2-[[4-(dimethylamino)phenyl]methylidene]cyclopentan-1-one Chemical compound C1=CC(N(C)C)=CC=C1C=C1C(=O)CCC1 BTSXEIQFVFMZLH-UHFFFAOYSA-N 0.000 description 1
- OJPDDQSCZGTACX-UHFFFAOYSA-N 2-[n-(2-hydroxyethyl)anilino]ethanol Chemical compound OCCN(CCO)C1=CC=CC=C1 OJPDDQSCZGTACX-UHFFFAOYSA-N 0.000 description 1
- DZZAHLOABNWIFA-UHFFFAOYSA-N 2-butoxy-1,2-diphenylethanone Chemical compound C=1C=CC=CC=1C(OCCCC)C(=O)C1=CC=CC=C1 DZZAHLOABNWIFA-UHFFFAOYSA-N 0.000 description 1
- KMNCBSZOIQAUFX-UHFFFAOYSA-N 2-ethoxy-1,2-diphenylethanone Chemical compound C=1C=CC=CC=1C(OCC)C(=O)C1=CC=CC=C1 KMNCBSZOIQAUFX-UHFFFAOYSA-N 0.000 description 1
- MRDMGGOYEBRLPD-UHFFFAOYSA-N 2-ethoxy-1-(2-ethoxyphenyl)ethanone Chemical compound CCOCC(=O)C1=CC=CC=C1OCC MRDMGGOYEBRLPD-UHFFFAOYSA-N 0.000 description 1
- ZACVGCNKGYYQHA-UHFFFAOYSA-N 2-ethylhexoxycarbonyloxy 2-ethylhexyl carbonate Chemical compound CCCCC(CC)COC(=O)OOC(=O)OCC(CC)CCCC ZACVGCNKGYYQHA-UHFFFAOYSA-N 0.000 description 1
- MIRQGKQPLPBZQM-UHFFFAOYSA-N 2-hydroperoxy-2,4,4-trimethylpentane Chemical compound CC(C)(C)CC(C)(C)OO MIRQGKQPLPBZQM-UHFFFAOYSA-N 0.000 description 1
- WFUGQJXVXHBTEM-UHFFFAOYSA-N 2-hydroperoxy-2-(2-hydroperoxybutan-2-ylperoxy)butane Chemical compound CCC(C)(OO)OOC(C)(CC)OO WFUGQJXVXHBTEM-UHFFFAOYSA-N 0.000 description 1
- VZMLJEYQUZKERO-UHFFFAOYSA-N 2-hydroxy-1-(2-methylphenyl)-2-phenylethanone Chemical compound CC1=CC=CC=C1C(=O)C(O)C1=CC=CC=C1 VZMLJEYQUZKERO-UHFFFAOYSA-N 0.000 description 1
- XMLYCEVDHLAQEL-UHFFFAOYSA-N 2-hydroxy-2-methyl-1-phenylpropan-1-one Chemical compound CC(C)(O)C(=O)C1=CC=CC=C1 XMLYCEVDHLAQEL-UHFFFAOYSA-N 0.000 description 1
- GVSTYPOYHNVKHY-UHFFFAOYSA-N 2-methoxybutanoic acid Chemical compound CCC(OC)C(O)=O GVSTYPOYHNVKHY-UHFFFAOYSA-N 0.000 description 1
- XBGVQVDENOPZGD-UHFFFAOYSA-N 2-methyl-1-(4-methylsulfanylphenyl)-2-morpholin-4-ylpropan-1-ol Chemical compound C1=CC(SC)=CC=C1C(O)C(C)(C)N1CCOCC1 XBGVQVDENOPZGD-UHFFFAOYSA-N 0.000 description 1
- YAQDPWONDFRAHF-UHFFFAOYSA-N 2-methyl-2-(2-methylpentan-2-ylperoxy)pentane Chemical compound CCCC(C)(C)OOC(C)(C)CCC YAQDPWONDFRAHF-UHFFFAOYSA-N 0.000 description 1
- MYISVPVWAQRUTL-UHFFFAOYSA-N 2-methylthioxanthen-9-one Chemical compound C1=CC=C2C(=O)C3=CC(C)=CC=C3SC2=C1 MYISVPVWAQRUTL-UHFFFAOYSA-N 0.000 description 1
- YTPSFXZMJKMUJE-UHFFFAOYSA-N 2-tert-butylanthracene-9,10-dione Chemical compound C1=CC=C2C(=O)C3=CC(C(C)(C)C)=CC=C3C(=O)C2=C1 YTPSFXZMJKMUJE-UHFFFAOYSA-N 0.000 description 1
- ZHTLMPWATZQGAP-UHFFFAOYSA-N 2-triethoxysilylethanol Chemical compound CCO[Si](CCO)(OCC)OCC ZHTLMPWATZQGAP-UHFFFAOYSA-N 0.000 description 1
- ZCEAVTLUHHSQTE-UHFFFAOYSA-N 2-triethoxysilylethylurea Chemical compound CCO[Si](OCC)(OCC)CCNC(N)=O ZCEAVTLUHHSQTE-UHFFFAOYSA-N 0.000 description 1
- BOSZBTFBHSYELP-UHFFFAOYSA-N 2-trimethoxysilylethanol Chemical compound CO[Si](OC)(OC)CCO BOSZBTFBHSYELP-UHFFFAOYSA-N 0.000 description 1
- CZBAFHYBQOCXFP-UHFFFAOYSA-N 2-trimethoxysilylethylurea Chemical compound CO[Si](OC)(OC)CCNC(N)=O CZBAFHYBQOCXFP-UHFFFAOYSA-N 0.000 description 1
- NNRAOBUKHNZQFX-UHFFFAOYSA-N 2H-benzotriazole-4-thiol Chemical compound SC1=CC=CC2=C1NN=N2 NNRAOBUKHNZQFX-UHFFFAOYSA-N 0.000 description 1
- KFJDQPJLANOOOB-UHFFFAOYSA-N 2h-benzotriazole-4-carboxylic acid Chemical compound OC(=O)C1=CC=CC2=NNN=C12 KFJDQPJLANOOOB-UHFFFAOYSA-N 0.000 description 1
- GUOVBFFLXKJFEE-UHFFFAOYSA-N 2h-benzotriazole-5-carboxylic acid Chemical compound C1=C(C(=O)O)C=CC2=NNN=C21 GUOVBFFLXKJFEE-UHFFFAOYSA-N 0.000 description 1
- CSZGWTIIEDCAOM-UHFFFAOYSA-N 3,5-bis[[4-(diethylamino)phenyl]methylidene]-1-methylpiperidin-4-one Chemical compound C1=CC(N(CC)CC)=CC=C1C=C(CN(C)C1)C(=O)C1=CC1=CC=C(N(CC)CC)C=C1 CSZGWTIIEDCAOM-UHFFFAOYSA-N 0.000 description 1
- FRIBMENBGGCKPD-UHFFFAOYSA-N 3-(2,3-dimethoxyphenyl)prop-2-enal Chemical compound COC1=CC=CC(C=CC=O)=C1OC FRIBMENBGGCKPD-UHFFFAOYSA-N 0.000 description 1
- OMQHDIHZSDEIFH-UHFFFAOYSA-N 3-Acetyldihydro-2(3H)-furanone Chemical compound CC(=O)C1CCOC1=O OMQHDIHZSDEIFH-UHFFFAOYSA-N 0.000 description 1
- LBVMWHCOFMFPEG-UHFFFAOYSA-N 3-methoxy-n,n-dimethylpropanamide Chemical compound COCCC(=O)N(C)C LBVMWHCOFMFPEG-UHFFFAOYSA-N 0.000 description 1
- NMUBRRLYMADSGF-UHFFFAOYSA-N 3-triethoxysilylpropan-1-ol Chemical compound CCO[Si](OCC)(OCC)CCCO NMUBRRLYMADSGF-UHFFFAOYSA-N 0.000 description 1
- YATIYDNBFHEOFA-UHFFFAOYSA-N 3-trimethoxysilylpropan-1-ol Chemical compound CO[Si](OC)(OC)CCCO YATIYDNBFHEOFA-UHFFFAOYSA-N 0.000 description 1
- LVACOMKKELLCHJ-UHFFFAOYSA-N 3-trimethoxysilylpropylurea Chemical compound CO[Si](OC)(OC)CCCNC(N)=O LVACOMKKELLCHJ-UHFFFAOYSA-N 0.000 description 1
- XOJWAAUYNWGQAU-UHFFFAOYSA-N 4-(2-methylprop-2-enoyloxy)butyl 2-methylprop-2-enoate Chemical compound CC(=C)C(=O)OCCCCOC(=O)C(C)=C XOJWAAUYNWGQAU-UHFFFAOYSA-N 0.000 description 1
- QYIMZXITLDTULQ-UHFFFAOYSA-N 4-(4-amino-2-methylphenyl)-3-methylaniline Chemical compound CC1=CC(N)=CC=C1C1=CC=C(N)C=C1C QYIMZXITLDTULQ-UHFFFAOYSA-N 0.000 description 1
- 229960000549 4-dimethylaminophenol Drugs 0.000 description 1
- SBCIVMFCVBDNOF-UHFFFAOYSA-N 4-triethoxysilylbutan-1-ol Chemical compound CCO[Si](OCC)(OCC)CCCCO SBCIVMFCVBDNOF-UHFFFAOYSA-N 0.000 description 1
- TXXSPYXXJWJGPL-UHFFFAOYSA-N 4-triethoxysilylbutylurea Chemical compound CCO[Si](OCC)(OCC)CCCCNC(N)=O TXXSPYXXJWJGPL-UHFFFAOYSA-N 0.000 description 1
- PIDYPPNNYNADRY-UHFFFAOYSA-N 4-trimethoxysilylbutan-1-ol Chemical compound CO[Si](OC)(OC)CCCCO PIDYPPNNYNADRY-UHFFFAOYSA-N 0.000 description 1
- APHHTLMSHLXKER-UHFFFAOYSA-N 4-trimethoxysilylbutylurea Chemical compound CO[Si](OC)(OC)CCCCNC(N)=O APHHTLMSHLXKER-UHFFFAOYSA-N 0.000 description 1
- SAPGBCWOQLHKKZ-UHFFFAOYSA-N 6-(2-methylprop-2-enoyloxy)hexyl 2-methylprop-2-enoate Chemical compound CC(=C)C(=O)OCCCCCCOC(=O)C(C)=C SAPGBCWOQLHKKZ-UHFFFAOYSA-N 0.000 description 1
- FIHBHSQYSYVZQE-UHFFFAOYSA-N 6-prop-2-enoyloxyhexyl prop-2-enoate Chemical compound C=CC(=O)OCCCCCCOC(=O)C=C FIHBHSQYSYVZQE-UHFFFAOYSA-N 0.000 description 1
- JWJMBKSFTTXMLL-UHFFFAOYSA-N 9,10-dimethoxyanthracene Chemical compound C1=CC=C2C(OC)=C(C=CC=C3)C3=C(OC)C2=C1 JWJMBKSFTTXMLL-UHFFFAOYSA-N 0.000 description 1
- OMPJBNCRMGITSC-UHFFFAOYSA-N Benzoylperoxide Chemical compound C=1C=CC=CC=1C(=O)OOC(=O)C1=CC=CC=C1 OMPJBNCRMGITSC-UHFFFAOYSA-N 0.000 description 1
- VEXZGXHMUGYJMC-UHFFFAOYSA-M Chloride anion Chemical compound [Cl-] VEXZGXHMUGYJMC-UHFFFAOYSA-M 0.000 description 1
- 239000001263 FEMA 3042 Substances 0.000 description 1
- MHAJPDPJQMAIIY-UHFFFAOYSA-N Hydrogen peroxide Chemical compound OO MHAJPDPJQMAIIY-UHFFFAOYSA-N 0.000 description 1
- YIVJZNGAASQVEM-UHFFFAOYSA-N Lauroyl peroxide Chemical compound CCCCCCCCCCCC(=O)OOC(=O)CCCCCCCCCCC YIVJZNGAASQVEM-UHFFFAOYSA-N 0.000 description 1
- NQSMEZJWJJVYOI-UHFFFAOYSA-N Methyl 2-benzoylbenzoate Chemical compound COC(=O)C1=CC=CC=C1C(=O)C1=CC=CC=C1 NQSMEZJWJJVYOI-UHFFFAOYSA-N 0.000 description 1
- NPKSPKHJBVJUKB-UHFFFAOYSA-N N-phenylglycine Chemical compound OC(=O)CNC1=CC=CC=C1 NPKSPKHJBVJUKB-UHFFFAOYSA-N 0.000 description 1
- 238000005481 NMR spectroscopy Methods 0.000 description 1
- LRBQNJMCXXYXIU-PPKXGCFTSA-N Penta-digallate-beta-D-glucose Natural products OC1=C(O)C(O)=CC(C(=O)OC=2C(=C(O)C=C(C=2)C(=O)OC[C@@H]2[C@H]([C@H](OC(=O)C=3C=C(OC(=O)C=4C=C(O)C(O)=C(O)C=4)C(O)=C(O)C=3)[C@@H](OC(=O)C=3C=C(OC(=O)C=4C=C(O)C(O)=C(O)C=4)C(O)=C(O)C=3)[C@H](OC(=O)C=3C=C(OC(=O)C=4C=C(O)C(O)=C(O)C=4)C(O)=C(O)C=3)O2)OC(=O)C=2C=C(OC(=O)C=3C=C(O)C(O)=C(O)C=3)C(O)=C(O)C=2)O)=C1 LRBQNJMCXXYXIU-PPKXGCFTSA-N 0.000 description 1
- ISWSIDIOOBJBQZ-UHFFFAOYSA-N Phenol Chemical compound OC1=CC=CC=C1 ISWSIDIOOBJBQZ-UHFFFAOYSA-N 0.000 description 1
- 229920003171 Poly (ethylene oxide) Polymers 0.000 description 1
- AUNGANRZJHBGPY-SCRDCRAPSA-N Riboflavin Chemical compound OC[C@@H](O)[C@@H](O)[C@@H](O)CN1C=2C=C(C)C(C)=CC=2N=C2C1=NC(=O)NC2=O AUNGANRZJHBGPY-SCRDCRAPSA-N 0.000 description 1
- 229910052581 Si3N4 Inorganic materials 0.000 description 1
- 229910004298 SiO 2 Inorganic materials 0.000 description 1
- 229910010413 TiO 2 Inorganic materials 0.000 description 1
- DAKWPKUUDNSNPN-UHFFFAOYSA-N Trimethylolpropane triacrylate Chemical compound C=CC(=O)OCC(CC)(COC(=O)C=C)COC(=O)C=C DAKWPKUUDNSNPN-UHFFFAOYSA-N 0.000 description 1
- OKKRPWIIYQTPQF-UHFFFAOYSA-N Trimethylolpropane trimethacrylate Chemical compound CC(=C)C(=O)OCC(CC)(COC(=O)C(C)=C)COC(=O)C(C)=C OKKRPWIIYQTPQF-UHFFFAOYSA-N 0.000 description 1
- GCNKJQRMNYNDBI-UHFFFAOYSA-N [2-(hydroxymethyl)-2-(2-methylprop-2-enoyloxymethyl)butyl] 2-methylprop-2-enoate Chemical compound CC(=C)C(=O)OCC(CO)(CC)COC(=O)C(C)=C GCNKJQRMNYNDBI-UHFFFAOYSA-N 0.000 description 1
- TUOBEAZXHLTYLF-UHFFFAOYSA-N [2-(hydroxymethyl)-2-(prop-2-enoyloxymethyl)butyl] prop-2-enoate Chemical compound C=CC(=O)OCC(CO)(CC)COC(=O)C=C TUOBEAZXHLTYLF-UHFFFAOYSA-N 0.000 description 1
- JUDXBRVLWDGRBC-UHFFFAOYSA-N [2-(hydroxymethyl)-3-(2-methylprop-2-enoyloxy)-2-(2-methylprop-2-enoyloxymethyl)propyl] 2-methylprop-2-enoate Chemical compound CC(=C)C(=O)OCC(CO)(COC(=O)C(C)=C)COC(=O)C(C)=C JUDXBRVLWDGRBC-UHFFFAOYSA-N 0.000 description 1
- HVVWZTWDBSEWIH-UHFFFAOYSA-N [2-(hydroxymethyl)-3-prop-2-enoyloxy-2-(prop-2-enoyloxymethyl)propyl] prop-2-enoate Chemical compound C=CC(=O)OCC(CO)(COC(=O)C=C)COC(=O)C=C HVVWZTWDBSEWIH-UHFFFAOYSA-N 0.000 description 1
- MPIAGWXWVAHQBB-UHFFFAOYSA-N [3-prop-2-enoyloxy-2-[[3-prop-2-enoyloxy-2,2-bis(prop-2-enoyloxymethyl)propoxy]methyl]-2-(prop-2-enoyloxymethyl)propyl] prop-2-enoate Chemical compound C=CC(=O)OCC(COC(=O)C=C)(COC(=O)C=C)COCC(COC(=O)C=C)(COC(=O)C=C)COC(=O)C=C MPIAGWXWVAHQBB-UHFFFAOYSA-N 0.000 description 1
- IUBMTLKTDZQUBG-UHFFFAOYSA-N [4-[diethyl(hydroxy)silyl]phenyl]-diethyl-hydroxysilane Chemical compound CC[Si](O)(CC)C1=CC=C([Si](O)(CC)CC)C=C1 IUBMTLKTDZQUBG-UHFFFAOYSA-N 0.000 description 1
- XHWWBQNCFZGYKO-UHFFFAOYSA-N [4-[dihydroxy(methyl)silyl]phenyl]-dihydroxy-methylsilane Chemical compound C[Si](O)(O)C1=CC=C([Si](C)(O)O)C=C1 XHWWBQNCFZGYKO-UHFFFAOYSA-N 0.000 description 1
- ZWDBOXIZIUDKTL-UHFFFAOYSA-N [4-[dihydroxy(propyl)silyl]phenyl]-dihydroxy-propylsilane Chemical compound CCC[Si](O)(O)C1=CC=C([Si](O)(O)CCC)C=C1 ZWDBOXIZIUDKTL-UHFFFAOYSA-N 0.000 description 1
- VEBCLRKUSAGCDF-UHFFFAOYSA-N ac1mi23b Chemical compound C1C2C3C(COC(=O)C=C)CCC3C1C(COC(=O)C=C)C2 VEBCLRKUSAGCDF-UHFFFAOYSA-N 0.000 description 1
- GTDPSWPPOUPBNX-UHFFFAOYSA-N ac1mqpva Chemical compound CC12C(=O)OC(=O)C1(C)C1(C)C2(C)C(=O)OC1=O GTDPSWPPOUPBNX-UHFFFAOYSA-N 0.000 description 1
- DHKHKXVYLBGOIT-UHFFFAOYSA-N acetaldehyde Diethyl Acetal Natural products CCOC(C)OCC DHKHKXVYLBGOIT-UHFFFAOYSA-N 0.000 description 1
- 150000008062 acetophenones Chemical class 0.000 description 1
- 230000009471 action Effects 0.000 description 1
- PYKYMHQGRFAEBM-UHFFFAOYSA-N anthraquinone Natural products CCC(=O)c1c(O)c2C(=O)C3C(C=CC=C3O)C(=O)c2cc1CC(=O)OC PYKYMHQGRFAEBM-UHFFFAOYSA-N 0.000 description 1
- 150000004056 anthraquinones Chemical class 0.000 description 1
- 125000006615 aromatic heterocyclic group Chemical group 0.000 description 1
- LHMRXAIRPKSGDE-UHFFFAOYSA-N benzo[a]anthracene-7,12-dione Chemical compound C1=CC2=CC=CC=C2C2=C1C(=O)C1=CC=CC=C1C2=O LHMRXAIRPKSGDE-UHFFFAOYSA-N 0.000 description 1
- 150000008366 benzophenones Chemical class 0.000 description 1
- 235000019400 benzoyl peroxide Nutrition 0.000 description 1
- 229940007550 benzyl acetate Drugs 0.000 description 1
- 239000001273 butane Substances 0.000 description 1
- 125000004106 butoxy group Chemical group [*]OC([H])([H])C([H])([H])C(C([H])([H])[H])([H])[H] 0.000 description 1
- 125000000484 butyl group Chemical group [H]C([*])([H])C([H])([H])C([H])([H])C([H])([H])[H] 0.000 description 1
- WAJIDUSQHQIGHN-UHFFFAOYSA-N butyl-[4-[butyl(dihydroxy)silyl]phenyl]-dihydroxysilane Chemical compound CCCC[Si](O)(O)C1=CC=C([Si](O)(O)CCCC)C=C1 WAJIDUSQHQIGHN-UHFFFAOYSA-N 0.000 description 1
- LDOKGSQCTMGUCO-UHFFFAOYSA-N butyl-ethyl-hydroxy-phenylsilane Chemical compound CCCC[Si](O)(CC)C1=CC=CC=C1 LDOKGSQCTMGUCO-UHFFFAOYSA-N 0.000 description 1
- GEEVFOWFGFZMKW-UHFFFAOYSA-N butyl-hydroxy-diphenylsilane Chemical compound C=1C=CC=CC=1[Si](O)(CCCC)C1=CC=CC=C1 GEEVFOWFGFZMKW-UHFFFAOYSA-N 0.000 description 1
- JZQYTILZARPJMT-UHFFFAOYSA-N butyl-hydroxy-methyl-phenylsilane Chemical compound CCCC[Si](C)(O)C1=CC=CC=C1 JZQYTILZARPJMT-UHFFFAOYSA-N 0.000 description 1
- 238000011088 calibration curve Methods 0.000 description 1
- 125000000609 carbazolyl group Chemical group C1(=CC=CC=2C3=CC=CC=C3NC12)* 0.000 description 1
- 239000011203 carbon fibre reinforced carbon Substances 0.000 description 1
- 239000000470 constituent Substances 0.000 description 1
- 238000001816 cooling Methods 0.000 description 1
- 230000007797 corrosion Effects 0.000 description 1
- 238000005260 corrosion Methods 0.000 description 1
- 238000004132 cross linking Methods 0.000 description 1
- 125000000753 cycloalkyl group Chemical group 0.000 description 1
- 125000004386 diacrylate group Chemical group 0.000 description 1
- 239000012933 diacyl peroxide Substances 0.000 description 1
- UJPSLBWRTYKBLG-UHFFFAOYSA-N dibutyl-[4-[dibutyl(hydroxy)silyl]phenyl]-hydroxysilane Chemical compound CCCC[Si](O)(CCCC)C1=CC=C([Si](O)(CCCC)CCCC)C=C1 UJPSLBWRTYKBLG-UHFFFAOYSA-N 0.000 description 1
- ZFTFAPZRGNKQPU-UHFFFAOYSA-N dicarbonic acid Chemical compound OC(=O)OC(O)=O ZFTFAPZRGNKQPU-UHFFFAOYSA-N 0.000 description 1
- OLLFKUHHDPMQFR-UHFFFAOYSA-N dihydroxy(diphenyl)silane Chemical compound C=1C=CC=CC=1[Si](O)(O)C1=CC=CC=C1 OLLFKUHHDPMQFR-UHFFFAOYSA-N 0.000 description 1
- XGUNOBQJSJSFLG-UHFFFAOYSA-N dihydroxy-(2-methylpropyl)-phenylsilane Chemical compound CC(C)C[Si](O)(O)C1=CC=CC=C1 XGUNOBQJSJSFLG-UHFFFAOYSA-N 0.000 description 1
- RBSBUSKLSKHTBA-UHFFFAOYSA-N dihydroxy-methyl-phenylsilane Chemical compound C[Si](O)(O)C1=CC=CC=C1 RBSBUSKLSKHTBA-UHFFFAOYSA-N 0.000 description 1
- BGGSHDAFUHWTJY-UHFFFAOYSA-N dihydroxy-phenyl-propan-2-ylsilane Chemical compound CC(C)[Si](O)(O)C1=CC=CC=C1 BGGSHDAFUHWTJY-UHFFFAOYSA-N 0.000 description 1
- VTOJOSYEOUXEDF-UHFFFAOYSA-N dihydroxy-phenyl-propylsilane Chemical compound CCC[Si](O)(O)C1=CC=CC=C1 VTOJOSYEOUXEDF-UHFFFAOYSA-N 0.000 description 1
- 238000002845 discoloration Methods 0.000 description 1
- 238000004090 dissolution Methods 0.000 description 1
- 229920001971 elastomer Polymers 0.000 description 1
- 238000001227 electron beam curing Methods 0.000 description 1
- 239000003480 eluent Substances 0.000 description 1
- 239000008393 encapsulating agent Substances 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- WTOSNONTQZJEBC-UHFFFAOYSA-N erythrosin Chemical compound OC(=O)C1=CC=CC=C1C(C1C(C(=C(O)C(I)=C1)I)O1)=C2C1=C(I)C(=O)C(I)=C2 WTOSNONTQZJEBC-UHFFFAOYSA-N 0.000 description 1
- 125000004185 ester group Chemical group 0.000 description 1
- 125000001033 ether group Chemical group 0.000 description 1
- UHKJHMOIRYZSTH-UHFFFAOYSA-N ethyl 2-ethoxypropanoate Chemical compound CCOC(C)C(=O)OCC UHKJHMOIRYZSTH-UHFFFAOYSA-N 0.000 description 1
- HSFOEYCTUIQQES-UHFFFAOYSA-N ethyl-[4-[ethyl(dihydroxy)silyl]phenyl]-dihydroxysilane Chemical compound CC[Si](O)(O)C1=CC=C([Si](O)(O)CC)C=C1 HSFOEYCTUIQQES-UHFFFAOYSA-N 0.000 description 1
- AVHQYNBSFNOKCT-UHFFFAOYSA-N ethyl-dihydroxy-phenylsilane Chemical compound CC[Si](O)(O)C1=CC=CC=C1 AVHQYNBSFNOKCT-UHFFFAOYSA-N 0.000 description 1
- ZFERNGZLZDSUPH-UHFFFAOYSA-N ethyl-hydroxy-(2-methylpropyl)-phenylsilane Chemical compound CC(C)C[Si](O)(CC)C1=CC=CC=C1 ZFERNGZLZDSUPH-UHFFFAOYSA-N 0.000 description 1
- UFAHFMYBTCNZPM-UHFFFAOYSA-N ethyl-hydroxy-diphenylsilane Chemical compound C=1C=CC=CC=1[Si](O)(CC)C1=CC=CC=C1 UFAHFMYBTCNZPM-UHFFFAOYSA-N 0.000 description 1
- JFBTVTLFBGJGPA-UHFFFAOYSA-N ethyl-hydroxy-methyl-phenylsilane Chemical compound CC[Si](C)(O)C1=CC=CC=C1 JFBTVTLFBGJGPA-UHFFFAOYSA-N 0.000 description 1
- MGLPUHWTRVIBKO-UHFFFAOYSA-N ethyl-hydroxy-phenyl-propan-2-ylsilane Chemical compound CC[Si](O)(C(C)C)C1=CC=CC=C1 MGLPUHWTRVIBKO-UHFFFAOYSA-N 0.000 description 1
- SOFJSIIYDIMYKZ-UHFFFAOYSA-N ethyl-hydroxy-phenyl-propylsilane Chemical compound CCC[Si](O)(CC)C1=CC=CC=C1 SOFJSIIYDIMYKZ-UHFFFAOYSA-N 0.000 description 1
- 238000011156 evaluation Methods 0.000 description 1
- 230000006355 external stress Effects 0.000 description 1
- 238000001914 filtration Methods 0.000 description 1
- YLQWCDOCJODRMT-UHFFFAOYSA-N fluoren-9-one Chemical compound C1=CC=C2C(=O)C3=CC=CC=C3C2=C1 YLQWCDOCJODRMT-UHFFFAOYSA-N 0.000 description 1
- 230000004907 flux Effects 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- CATSNJVOTSVZJV-UHFFFAOYSA-N heptan-2-one Chemical compound CCCCCC(C)=O CATSNJVOTSVZJV-UHFFFAOYSA-N 0.000 description 1
- 125000003187 heptyl group Chemical group [H]C([*])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])[H] 0.000 description 1
- 125000000623 heterocyclic group Chemical group 0.000 description 1
- 125000004051 hexyl group Chemical group [H]C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])* 0.000 description 1
- 150000002432 hydroperoxides Chemical class 0.000 description 1
- 229960004337 hydroquinone Drugs 0.000 description 1
- CHAJJKUXTUIBMZ-UHFFFAOYSA-N hydroxy-(2-methylpropyl)-diphenylsilane Chemical compound C=1C=CC=CC=1[Si](O)(CC(C)C)C1=CC=CC=C1 CHAJJKUXTUIBMZ-UHFFFAOYSA-N 0.000 description 1
- YBNBOGKRCOCJHH-UHFFFAOYSA-N hydroxy-[4-[hydroxy(dimethyl)silyl]phenyl]-dimethylsilane Chemical compound C[Si](C)(O)C1=CC=C([Si](C)(C)O)C=C1 YBNBOGKRCOCJHH-UHFFFAOYSA-N 0.000 description 1
- XPNHTKZQLZVYHZ-UHFFFAOYSA-N hydroxy-diphenyl-propan-2-ylsilane Chemical compound C=1C=CC=CC=1[Si](O)(C(C)C)C1=CC=CC=C1 XPNHTKZQLZVYHZ-UHFFFAOYSA-N 0.000 description 1
- ONVJULYGRCXHAY-UHFFFAOYSA-N hydroxy-diphenyl-propylsilane Chemical compound C=1C=CC=CC=1[Si](O)(CCC)C1=CC=CC=C1 ONVJULYGRCXHAY-UHFFFAOYSA-N 0.000 description 1
- YVHRVGSGHBWDOI-UHFFFAOYSA-N hydroxy-methyl-(2-methylpropyl)-phenylsilane Chemical compound CC(C)C[Si](C)(O)C1=CC=CC=C1 YVHRVGSGHBWDOI-UHFFFAOYSA-N 0.000 description 1
- MLPRTGXXQKWLDM-UHFFFAOYSA-N hydroxy-methyl-diphenylsilane Chemical compound C=1C=CC=CC=1[Si](O)(C)C1=CC=CC=C1 MLPRTGXXQKWLDM-UHFFFAOYSA-N 0.000 description 1
- LLENFDWLUJBNFC-UHFFFAOYSA-N hydroxy-methyl-phenyl-propan-2-ylsilane Chemical compound CC(C)[Si](C)(O)C1=CC=CC=C1 LLENFDWLUJBNFC-UHFFFAOYSA-N 0.000 description 1
- FQQOMIXCGMRXEH-UHFFFAOYSA-N hydroxy-methyl-phenyl-propylsilane Chemical compound CCC[Si](C)(O)C1=CC=CC=C1 FQQOMIXCGMRXEH-UHFFFAOYSA-N 0.000 description 1
- PBQZDMZNIYTSRM-UHFFFAOYSA-N hydroxy-phenyl-dipropylsilane Chemical compound CCC[Si](O)(CCC)C1=CC=CC=C1 PBQZDMZNIYTSRM-UHFFFAOYSA-N 0.000 description 1
- 230000001771 impaired effect Effects 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 238000011416 infrared curing Methods 0.000 description 1
- 239000012212 insulator Substances 0.000 description 1
- 230000001678 irradiating effect Effects 0.000 description 1
- CDOSHBSSFJOMGT-UHFFFAOYSA-N linalool Chemical compound CC(C)=CCCC(C)(O)C=C CDOSHBSSFJOMGT-UHFFFAOYSA-N 0.000 description 1
- 229910044991 metal oxide Inorganic materials 0.000 description 1
- 150000004706 metal oxides Chemical class 0.000 description 1
- 125000005641 methacryl group Chemical group 0.000 description 1
- 125000001570 methylene group Chemical group [H]C([H])([*:1])[*:2] 0.000 description 1
- 238000011415 microwave curing Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 125000006606 n-butoxy group Chemical group 0.000 description 1
- 125000001624 naphthyl group Chemical group 0.000 description 1
- 125000004433 nitrogen atom Chemical group N* 0.000 description 1
- XKLJHFLUAHKGGU-UHFFFAOYSA-N nitrous amide Chemical class ON=N XKLJHFLUAHKGGU-UHFFFAOYSA-N 0.000 description 1
- 229920003986 novolac Polymers 0.000 description 1
- 125000002347 octyl group Chemical group [H]C([*])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])[H] 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 125000005375 organosiloxane group Chemical group 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- NWVVVBRKAWDGAB-UHFFFAOYSA-N p-methoxyphenol Chemical compound COC1=CC=C(O)C=C1 NWVVVBRKAWDGAB-UHFFFAOYSA-N 0.000 description 1
- 238000004806 packaging method and process Methods 0.000 description 1
- 125000001147 pentyl group Chemical group C(CCCC)* 0.000 description 1
- 150000002978 peroxides Chemical class 0.000 description 1
- 125000000864 peroxy group Chemical group O(O*)* 0.000 description 1
- 125000002080 perylenyl group Chemical group C1(=CC=C2C=CC=C3C4=CC=CC5=CC=CC(C1=C23)=C45)* 0.000 description 1
- CSHWQDPOILHKBI-UHFFFAOYSA-N peryrene Natural products C1=CC(C2=CC=CC=3C2=C2C=CC=3)=C3C2=CC=CC3=C1 CSHWQDPOILHKBI-UHFFFAOYSA-N 0.000 description 1
- 229950000688 phenothiazine Drugs 0.000 description 1
- 229920002577 polybenzoxazole Polymers 0.000 description 1
- 229920000642 polymer Polymers 0.000 description 1
- 229920000259 polyoxyethylene lauryl ether Polymers 0.000 description 1
- 239000002244 precipitate Substances 0.000 description 1
- 238000002360 preparation method Methods 0.000 description 1
- 230000001737 promoting effect Effects 0.000 description 1
- QMYDVDBERNLWKB-UHFFFAOYSA-N propane-1,2-diol;hydrate Chemical compound O.CC(O)CO QMYDVDBERNLWKB-UHFFFAOYSA-N 0.000 description 1
- 125000001436 propyl group Chemical group [H]C([*])([H])C([H])([H])C([H])([H])[H] 0.000 description 1
- 125000004076 pyridyl group Chemical group 0.000 description 1
- 229940079877 pyrogallol Drugs 0.000 description 1
- HNJBEVLQSNELDL-UHFFFAOYSA-N pyrrolidin-2-one Chemical compound O=C1CCCN1 HNJBEVLQSNELDL-UHFFFAOYSA-N 0.000 description 1
- 239000010453 quartz Substances 0.000 description 1
- 125000002943 quinolinyl group Chemical group N1=C(C=CC2=CC=CC=C12)* 0.000 description 1
- 230000005855 radiation Effects 0.000 description 1
- 238000004151 rapid thermal annealing Methods 0.000 description 1
- 239000013558 reference substance Substances 0.000 description 1
- 229960001755 resorcinol Drugs 0.000 description 1
- 238000004335 scaling law Methods 0.000 description 1
- 238000006748 scratching Methods 0.000 description 1
- 230000002393 scratching effect Effects 0.000 description 1
- 238000007789 sealing Methods 0.000 description 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
- 229910052814 silicon oxide Inorganic materials 0.000 description 1
- HXJUTPCZVOIRIF-UHFFFAOYSA-N sulfolane Chemical compound O=S1(=O)CCCC1 HXJUTPCZVOIRIF-UHFFFAOYSA-N 0.000 description 1
- 230000001629 suppression Effects 0.000 description 1
- 230000008961 swelling Effects 0.000 description 1
- LRBQNJMCXXYXIU-NRMVVENXSA-N tannic acid Chemical compound OC1=C(O)C(O)=CC(C(=O)OC=2C(=C(O)C=C(C=2)C(=O)OC[C@@H]2[C@H]([C@H](OC(=O)C=3C=C(OC(=O)C=4C=C(O)C(O)=C(O)C=4)C(O)=C(O)C=3)[C@@H](OC(=O)C=3C=C(OC(=O)C=4C=C(O)C(O)=C(O)C=4)C(O)=C(O)C=3)[C@@H](OC(=O)C=3C=C(OC(=O)C=4C=C(O)C(O)=C(O)C=4)C(O)=C(O)C=3)O2)OC(=O)C=2C=C(OC(=O)C=3C=C(O)C(O)=C(O)C=3)C(O)=C(O)C=2)O)=C1 LRBQNJMCXXYXIU-NRMVVENXSA-N 0.000 description 1
- 229940033123 tannic acid Drugs 0.000 description 1
- 235000015523 tannic acid Nutrition 0.000 description 1
- 229920002258 tannic acid Polymers 0.000 description 1
- HAQMPJFWQWLQDO-UHFFFAOYSA-N tert-butyl-ethyl-hydroxy-phenylsilane Chemical compound CC[Si](O)(C(C)(C)C)C1=CC=CC=C1 HAQMPJFWQWLQDO-UHFFFAOYSA-N 0.000 description 1
- UNAYGNMKNYRIHL-UHFFFAOYSA-N tert-butyl-hydroxy-diphenylsilane Chemical compound C=1C=CC=CC=1[Si](O)(C(C)(C)C)C1=CC=CC=C1 UNAYGNMKNYRIHL-UHFFFAOYSA-N 0.000 description 1
- VLKDZHUARIPFFA-UHFFFAOYSA-N tert-butyl-hydroxy-methyl-phenylsilane Chemical compound CC(C)(C)[Si](C)(O)C1=CC=CC=C1 VLKDZHUARIPFFA-UHFFFAOYSA-N 0.000 description 1
- GSECCTDWEGTEBD-UHFFFAOYSA-N tert-butylperoxycyclohexane Chemical compound CC(C)(C)OOC1CCCCC1 GSECCTDWEGTEBD-UHFFFAOYSA-N 0.000 description 1
- 125000006158 tetracarboxylic acid group Chemical group 0.000 description 1
- YLQBMQCUIZJEEH-UHFFFAOYSA-N tetrahydrofuran Natural products C=1C=COC=1 YLQBMQCUIZJEEH-UHFFFAOYSA-N 0.000 description 1
- CZDYPVPMEAXLPK-UHFFFAOYSA-N tetramethylsilane Chemical compound C[Si](C)(C)C CZDYPVPMEAXLPK-UHFFFAOYSA-N 0.000 description 1
- 150000003536 tetrazoles Chemical class 0.000 description 1
- 125000000101 thioether group Chemical group 0.000 description 1
- 125000003944 tolyl group Chemical group 0.000 description 1
- JPMCMQORJRTDKK-UHFFFAOYSA-N triazol-1-ylmethanol Chemical compound OCN1C=CN=N1 JPMCMQORJRTDKK-UHFFFAOYSA-N 0.000 description 1
- 150000003852 triazoles Chemical class 0.000 description 1
- UNKMHLWJZHLPPM-UHFFFAOYSA-N triethoxy(oxiran-2-ylmethoxymethyl)silane Chemical compound CCO[Si](OCC)(OCC)COCC1CO1 UNKMHLWJZHLPPM-UHFFFAOYSA-N 0.000 description 1
- JXUKBNICSRJFAP-UHFFFAOYSA-N triethoxy-[3-(oxiran-2-ylmethoxy)propyl]silane Chemical compound CCO[Si](OCC)(OCC)CCCOCC1CO1 JXUKBNICSRJFAP-UHFFFAOYSA-N 0.000 description 1
- GSUGNQKJVLXBHC-UHFFFAOYSA-N triethoxy-[4-(oxiran-2-ylmethoxy)butyl]silane Chemical compound CCO[Si](OCC)(OCC)CCCCOCC1CO1 GSUGNQKJVLXBHC-UHFFFAOYSA-N 0.000 description 1
- QQQSFSZALRVCSZ-UHFFFAOYSA-N triethoxysilane Chemical compound CCO[SiH](OCC)OCC QQQSFSZALRVCSZ-UHFFFAOYSA-N 0.000 description 1
- HPEPIADELDNCED-UHFFFAOYSA-N triethoxysilylmethanol Chemical compound CCO[Si](CO)(OCC)OCC HPEPIADELDNCED-UHFFFAOYSA-N 0.000 description 1
- RHCQSXFNFRBOMC-UHFFFAOYSA-N triethoxysilylmethylurea Chemical compound CCO[Si](OCC)(OCC)CNC(N)=O RHCQSXFNFRBOMC-UHFFFAOYSA-N 0.000 description 1
- 125000002023 trifluoromethyl group Chemical group FC(F)(F)* 0.000 description 1
- FCVNATXRSJMIDT-UHFFFAOYSA-N trihydroxy(phenyl)silane Chemical compound O[Si](O)(O)C1=CC=CC=C1 FCVNATXRSJMIDT-UHFFFAOYSA-N 0.000 description 1
- QQUBYBOFPPCWDM-UHFFFAOYSA-N trihydroxy-(4-trihydroxysilylphenyl)silane Chemical compound O[Si](O)(O)C1=CC=C([Si](O)(O)O)C=C1 QQUBYBOFPPCWDM-UHFFFAOYSA-N 0.000 description 1
- LFBULLRGNLZJAF-UHFFFAOYSA-N trimethoxy(oxiran-2-ylmethoxymethyl)silane Chemical compound CO[Si](OC)(OC)COCC1CO1 LFBULLRGNLZJAF-UHFFFAOYSA-N 0.000 description 1
- ZNXDCSVNCSSUNB-UHFFFAOYSA-N trimethoxy-[2-(oxiran-2-ylmethoxy)ethyl]silane Chemical compound CO[Si](OC)(OC)CCOCC1CO1 ZNXDCSVNCSSUNB-UHFFFAOYSA-N 0.000 description 1
- BPSIOYPQMFLKFR-UHFFFAOYSA-N trimethoxy-[3-(oxiran-2-ylmethoxy)propyl]silane Chemical compound CO[Si](OC)(OC)CCCOCC1CO1 BPSIOYPQMFLKFR-UHFFFAOYSA-N 0.000 description 1
- GUKYSRVOOIKHHB-UHFFFAOYSA-N trimethoxy-[4-(oxiran-2-ylmethoxy)butyl]silane Chemical compound CO[Si](OC)(OC)CCCCOCC1CO1 GUKYSRVOOIKHHB-UHFFFAOYSA-N 0.000 description 1
- SPHALHRGAQVBKI-UHFFFAOYSA-N trimethoxysilylmethanol Chemical compound CO[Si](CO)(OC)OC SPHALHRGAQVBKI-UHFFFAOYSA-N 0.000 description 1
- UOTGHAMTHYCXIM-UHFFFAOYSA-N trimethoxysilylmethylurea Chemical compound CO[Si](OC)(OC)CNC(N)=O UOTGHAMTHYCXIM-UHFFFAOYSA-N 0.000 description 1
Images
Classifications
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08F—MACROMOLECULAR COMPOUNDS OBTAINED BY REACTIONS ONLY INVOLVING CARBON-TO-CARBON UNSATURATED BONDS
- C08F2/00—Processes of polymerisation
- C08F2/46—Polymerisation initiated by wave energy or particle radiation
- C08F2/48—Polymerisation initiated by wave energy or particle radiation by ultraviolet or visible light
- C08F2/50—Polymerisation initiated by wave energy or particle radiation by ultraviolet or visible light with sensitising agents
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08F—MACROMOLECULAR COMPOUNDS OBTAINED BY REACTIONS ONLY INVOLVING CARBON-TO-CARBON UNSATURATED BONDS
- C08F222/00—Copolymers of compounds having one or more unsaturated aliphatic radicals, each having only one carbon-to-carbon double bond, and at least one being terminated by a carboxyl radical and containing at least one other carboxyl radical in the molecule; Salts, anhydrides, esters, amides, imides, or nitriles thereof
- C08F222/10—Esters
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08F—MACROMOLECULAR COMPOUNDS OBTAINED BY REACTIONS ONLY INVOLVING CARBON-TO-CARBON UNSATURATED BONDS
- C08F290/00—Macromolecular compounds obtained by polymerising monomers on to polymers modified by introduction of aliphatic unsaturated end or side groups
- C08F290/08—Macromolecular compounds obtained by polymerising monomers on to polymers modified by introduction of aliphatic unsaturated end or side groups on to polymers modified by introduction of unsaturated side groups
- C08F290/14—Polymers provided for in subclass C08G
- C08F290/145—Polyamides; Polyesteramides; Polyimides
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08G—MACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
- C08G73/00—Macromolecular compounds obtained by reactions forming a linkage containing nitrogen with or without oxygen or carbon in the main chain of the macromolecule, not provided for in groups C08G12/00 - C08G71/00
- C08G73/06—Polycondensates having nitrogen-containing heterocyclic rings in the main chain of the macromolecule
- C08G73/10—Polyimides; Polyester-imides; Polyamide-imides; Polyamide acids or similar polyimide precursors
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08G—MACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
- C08G73/00—Macromolecular compounds obtained by reactions forming a linkage containing nitrogen with or without oxygen or carbon in the main chain of the macromolecule, not provided for in groups C08G12/00 - C08G71/00
- C08G73/06—Polycondensates having nitrogen-containing heterocyclic rings in the main chain of the macromolecule
- C08G73/10—Polyimides; Polyester-imides; Polyamide-imides; Polyamide acids or similar polyimide precursors
- C08G73/12—Unsaturated polyimide precursors
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/027—Non-macromolecular photopolymerisable compounds having carbon-to-carbon double bonds, e.g. ethylenic compounds
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/027—Non-macromolecular photopolymerisable compounds having carbon-to-carbon double bonds, e.g. ethylenic compounds
- G03F7/028—Non-macromolecular photopolymerisable compounds having carbon-to-carbon double bonds, e.g. ethylenic compounds with photosensitivity-increasing substances, e.g. photoinitiators
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/027—Non-macromolecular photopolymerisable compounds having carbon-to-carbon double bonds, e.g. ethylenic compounds
- G03F7/028—Non-macromolecular photopolymerisable compounds having carbon-to-carbon double bonds, e.g. ethylenic compounds with photosensitivity-increasing substances, e.g. photoinitiators
- G03F7/031—Organic compounds not covered by group G03F7/029
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/027—Non-macromolecular photopolymerisable compounds having carbon-to-carbon double bonds, e.g. ethylenic compounds
- G03F7/032—Non-macromolecular photopolymerisable compounds having carbon-to-carbon double bonds, e.g. ethylenic compounds with binders
- G03F7/037—Non-macromolecular photopolymerisable compounds having carbon-to-carbon double bonds, e.g. ethylenic compounds with binders the binders being polyamides or polyimides
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/09—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers
- G03F7/105—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers having substances, e.g. indicators, for forming visible images
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/20—Exposure; Apparatus therefor
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/26—Processing photosensitive materials; Apparatus therefor
- G03F7/30—Imagewise removal using liquid means
- G03F7/32—Liquid compositions therefor, e.g. developers
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/26—Processing photosensitive materials; Apparatus therefor
- G03F7/40—Treatment after imagewise removal, e.g. baking
Landscapes
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Chemical & Material Sciences (AREA)
- Medicinal Chemistry (AREA)
- Organic Chemistry (AREA)
- Polymers & Plastics (AREA)
- Health & Medical Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Spectroscopy & Molecular Physics (AREA)
- Structural Engineering (AREA)
- Architecture (AREA)
- Engineering & Computer Science (AREA)
- Materials For Photolithography (AREA)
- Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
- Macromolecular Compounds Obtained By Forming Nitrogen-Containing Linkages In General (AREA)
- Macromonomer-Based Addition Polymer (AREA)
- Formation Of Insulating Films (AREA)
Abstract
(A)重合性の不飽和結合を有するポリイミド前駆体、(B)脂肪族環状骨格を有する重合性モノマー、(C)光重合開始剤、(D)アントラセン構造を含む化合物、及び(E)溶剤を含有する感光性樹脂組成物。(A) a polyimide precursor having a polymerizable unsaturated bond, (B) a polymerizable monomer having an aliphatic cyclic skeleton, (C) a photopolymerization initiator, (D) a compound containing an anthracene structure, and (E) a solvent. A photosensitive resin composition containing.
Description
本発明は、感光性樹脂組成物、パターン硬化物の製造方法、硬化物、層間絶縁膜、カバーコート層、表面保護膜及び電子部品に関する。 The present invention relates to a photosensitive resin composition, a method for producing a cured pattern, a cured product, an interlayer insulating film, a cover coat layer, a surface protective film, and an electronic component.
従来、半導体素子の表面保護膜及び層間絶縁膜には、優れた耐熱性と電気特性、機械特性等を併せ持つポリイミドやポリベンゾオキサゾールが用いられている。近年、これらの樹脂自身に感光特性を付与した感光性樹脂組成物が用いられており、これを用いるとパターン硬化物の製造工程が簡略化でき、煩雑な製造工程を短縮できる。(例えば、特許文献1参照) Conventionally, polyimide or polybenzoxazole having excellent heat resistance, electrical properties, mechanical properties, etc. has been used as a surface protective film and an interlayer insulating film of a semiconductor element. In recent years, photosensitive resin compositions in which photosensitive properties are imparted to these resins themselves have been used, and by using this, the manufacturing process of a cured pattern can be simplified and complicated manufacturing processes can be shortened. (See, for example, Patent Document 1)
ところで、近年、コンピュータの高性能化を支えてきたトランジスタの微細化は、スケーリング則の限界に来ており、さらなる高性能化や高速化のために半導体素子を3次元的に積層する積層デバイス構造が注目を集めている。 By the way, in recent years, the miniaturization of transistors, which has supported the high performance of computers, has reached the limit of the scaling law, and a laminated device structure in which semiconductor elements are three-dimensionally laminated for further high performance and high speed. Is attracting attention.
積層デバイス構造の中でも、マルチダイファンアウトウエハレベルパッケージ(Multi−die Fanout Wafer Level Packaging)は、一つのパッケージの中に複数のダイを一括封止して製造するパッケージであり、従来から提案されているファンアウトウエハレベルパッケージ(一つのパッケージの中に一つのダイを封止して製造する)よりも低コスト化、高性能化が期待できるので、非常に注目を集めている。 Among the laminated device structures, the multi-die fanout wafer level package (Multi-die Fanout Wafer Level Packaging) is a package manufactured by collectively encapsulating a plurality of dies in one package, and has been conventionally proposed. It is attracting a lot of attention because it can be expected to have lower cost and higher performance than the fan-out wafer level package (manufactured by sealing one die in one package).
マルチダイファンアウトウエハレベルパッケージの作製においては、高性能なダイの保護や耐熱性の低い封止材を保護し、歩留まりを向上させる観点から、低温硬化性が強く求められている(例えば、特許文献2参照)。 In the production of multi-die fan-out wafer level packages, low temperature curability is strongly required from the viewpoint of protecting high-performance dies, protecting encapsulants with low heat resistance, and improving yield (for example, patents). Reference 2).
また、樹脂組成物として、ポリイミド前駆体を含む樹脂組成物が開示されている(例えば、特許文献3参照)。 Further, as a resin composition, a resin composition containing a polyimide precursor is disclosed (see, for example, Patent Document 3).
本発明の目的は、200℃以下の低温硬化であっても良好な硬化物を形成できる、現像後の解像度及びパターニング性に優れる感光性樹脂組成物、パターン硬化物の製造方法、硬化物、層間絶縁膜、カバーコート層、表面保護膜及び電子部品を提供することである。 An object of the present invention is a photosensitive resin composition having excellent resolution and patterning property after development, which can form a good cured product even at a low temperature of 200 ° C. or lower, a method for producing a patterned cured product, a cured product, and layers. It is to provide an insulating film, a cover coat layer, a surface protective film and an electronic component.
本発明によれば、以下の感光性樹脂組成物等が提供される。
1.(A)重合性の不飽和結合を有するポリイミド前駆体、
(B)脂肪族環状骨格を有する重合性モノマー、
(C)光重合開始剤、
(D)アントラセン構造を含む化合物、及び
(E)溶剤を含有する感光性樹脂組成物。
2.前記(A)成分が、下記式(1)で表される構造単位を有するポリイミド前駆体である1に記載の感光性樹脂組成物。
3.前記(B)成分が、重合性の不飽和二重結合を含む基を有し、脂肪族環状骨格を有する重合性モノマーを含む、1又は2に記載の感光性樹脂組成物。
4.前記(B)成分が、2以上の重合性の不飽和二重結合を含む基を有し、脂肪族環状骨格を有する重合性モノマーである3に記載の感光性樹脂組成物。
5.前記(B)成分が、下記式(3)で表される重合性モノマーを含む1〜3のいずれかに記載の感光性樹脂組成物。
6.n1+n2が、2又は3である5に記載の感光性樹脂組成物。
7.前記(B)成分が、下記式(5)で表される重合性モノマーを含む1〜6のいずれかに記載の感光性樹脂組成物。
9.前記(D)成分が、ジブトキシアントラセン、ジメトキシアントラセン、ジエトキシアントラセン及びジエトキシエチルアントラセンからなる群から選択される1以上である1〜7のいずれかに記載の感光性樹脂組成物。
10.さらに、(F)熱重合開始剤を含む1〜9のいずれかに記載の感光性樹脂組成物。
11.パネルレベルパッケージ用である1〜10のいずれかに記載の感光性樹脂組成物。
12.1〜11のいずれかに記載の感光性樹脂組成物を基板上に塗布、乾燥して感光性樹脂膜を形成する工程と、
前記感光性樹脂膜をパターン露光して、樹脂膜を得る工程と、
前記パターン露光後の樹脂膜を、有機溶剤を用いて、現像し、パターン樹脂膜を得る工程と、
前記パターン樹脂膜を加熱処理する工程と、を含むパターン硬化物の製造方法。
13.前記加熱処理の温度が200℃以下である12に記載のパターン硬化物の製造方法。
14.1〜11のいずれかに記載の感光性樹脂組成物を硬化した硬化物。
15.パターン硬化物である14に記載の硬化物。
16.14又は15に記載の硬化物を用いて作製された層間絶縁膜、カバーコート層又は表面保護膜。
17.16に記載の層間絶縁膜、カバーコート層又は表面保護膜を含む電子部品。According to the present invention, the following photosensitive resin compositions and the like are provided.
1. 1. (A) Polyimide precursor having a polymerizable unsaturated bond,
(B) Polymerizable monomer having an aliphatic cyclic skeleton,
(C) Photopolymerization initiator,
A photosensitive resin composition containing (D) a compound containing an anthracene structure and (E) a solvent.
2. The photosensitive resin composition according to 1, wherein the component (A) is a polyimide precursor having a structural unit represented by the following formula (1).
3. 3. The photosensitive resin composition according to 1 or 2, wherein the component (B) contains a polymerizable monomer having a group containing a polymerizable unsaturated double bond and having an aliphatic cyclic skeleton.
4. 3. The photosensitive resin composition according to 3, wherein the component (B) is a polymerizable monomer having a group containing two or more polymerizable unsaturated double bonds and having an aliphatic cyclic skeleton.
5. The photosensitive resin composition according to any one of 1 to 3, wherein the component (B) contains a polymerizable monomer represented by the following formula (3).
6. 5. The photosensitive resin composition according to 5, wherein n1 + n2 is 2 or 3.
7. The photosensitive resin composition according to any one of 1 to 6, wherein the component (B) contains a polymerizable monomer represented by the following formula (5).
9. The photosensitive resin composition according to any one of 1 to 7, wherein the component (D) is one or more selected from the group consisting of dibutoxyanthracene, dimethoxyanthracene, diethoxyanthracene and diethoxyethyl anthracene.
10. The photosensitive resin composition according to any one of 1 to 9, further comprising (F) a thermal polymerization initiator.
11. The photosensitive resin composition according to any one of 1 to 10 for a panel level package.
A step of applying the photosensitive resin composition according to any one of 12.1 to 11 on a substrate and drying it to form a photosensitive resin film.
A step of pattern-exposing the photosensitive resin film to obtain a resin film, and
A step of developing the resin film after the pattern exposure using an organic solvent to obtain a pattern resin film, and
A method for producing a cured pattern product, which comprises a step of heat-treating the pattern resin film.
13. The method for producing a patterned cured product according to 12, wherein the temperature of the heat treatment is 200 ° C. or lower.
A cured product obtained by curing the photosensitive resin composition according to any one of 14.1 to 11.
15. The cured product according to 14, which is a pattern cured product.
An interlayer insulating film, a cover coat layer or a surface protective film produced by using the cured product according to 16.14 or 15.
An electronic component comprising the interlayer insulating film, covercoat layer or surface protective film according to 17.16.
本発明によれば、200℃以下の低温硬化であっても良好な硬化物を形成できる、現像後の解像度及びパターニング性に優れる感光性樹脂組成物、パターン硬化物の製造方法、硬化物、層間絶縁膜、カバーコート層、表面保護膜及び電子部品が提供できる。 According to the present invention, a photosensitive resin composition having excellent resolution and patterning property after development, a method for producing a patterned cured product, a cured product, and layers, which can form a good cured product even at a low temperature of 200 ° C. or lower. Insulating films, covercoat layers, surface protective films and electronic components can be provided.
以下に、本発明の感光性樹脂組成物、それを用いたパターン硬化物の製造方法、硬化物、層間絶縁膜、カバーコート層、表面保護膜及び電子部品の実施の形態を詳細に説明する。尚、以下の実施の形態により本発明が限定されるものではない。 Hereinafter, embodiments of the photosensitive resin composition of the present invention, a method for producing a pattern cured product using the same, a cured product, an interlayer insulating film, a cover coat layer, a surface protective film, and an electronic component will be described in detail. The present invention is not limited to the following embodiments.
本明細書において「A又はB」とは、AとBのどちらか一方を含んでいればよく、両方とも含んでいてもよい。また、本明細書において「工程」との語は、独立した工程だけではなく、他の工程と明確に区別できない場合であってもその工程の所期の作用が達成されれば、本用語に含まれる。
「〜」を用いて示された数値範囲は、「〜」の前後に記載される数値をそれぞれ最小値及び最大値として含む範囲を示す。また、本明細書において組成物中の各成分の含有量は、組成物中に各成分に該当する物質が複数存在する場合、特に断らない限り、組成物中に存在する当該複数の物質の合計量を意味する。さらに、例示材料は特に断らない限り単独で用いてもよいし、2種以上を組み合わせて用いてもよい。
本明細書における「(メタ)アクリル基」とは、「アクリル基」及び「メタクリル基」を意味する。As used herein, the term "A or B" may include either A or B, or both. Further, in the present specification, the term "process" is used not only as an independent process but also as a term as long as the desired action of the process is achieved even when it cannot be clearly distinguished from other processes. included.
The numerical range indicated by using "~" indicates a range including the numerical values before and after "~" as the minimum value and the maximum value, respectively. Further, in the present specification, the content of each component in the composition is the sum of the plurality of substances present in the composition unless otherwise specified, when a plurality of substances corresponding to each component are present in the composition. Means quantity. Further, the exemplary materials may be used alone or in combination of two or more unless otherwise specified.
As used herein, the term "(meth) acrylic group" means "acrylic group" and "methacryl group".
本発明の感光性樹脂組成物は、(A)重合性の不飽和結合を有するポリイミド前駆体(以下、「(A)成分」ともいう。)、(B)脂肪族環状骨格を有する重合性モノマー(「架橋剤」ともいう。)(以下、「(B)成分」ともいう。)、(C)光重合開始剤(以下、「(C)成分」ともいう。)、(D)アントラセン構造を含む化合物(以下、「(D)成分」ともいう。)、及び(E)溶剤(以下、「(E)成分」ともいう。)を含有する。 The photosensitive resin composition of the present invention comprises (A) a polyimide precursor having a polymerizable unsaturated bond (hereinafter, also referred to as “component (A)”), and (B) a polymerizable monomer having an aliphatic cyclic skeleton. (Also referred to as "crosslinking agent") (hereinafter, also referred to as "(B) component"), (C) photopolymerization initiator (hereinafter, also referred to as "(C) component"), (D) anthracene structure. It contains a compound containing (hereinafter, also referred to as "(D) component") and (E) solvent (hereinafter, also referred to as "(E) component").
これにより、200℃以下の低温硬化であっても良好な硬化物を形成でき、現像後の解像度及びパターニング性に優れる。
また、任意の効果として、200℃以下の低温硬化であっても良好な硬化物を形成でき、かつ硬化後の解像度に優れる硬化物を形成できる。As a result, a good cured product can be formed even when cured at a low temperature of 200 ° C. or lower, and the resolution and patterning property after development are excellent.
Further, as an arbitrary effect, a good cured product can be formed even at a low temperature curing of 200 ° C. or lower, and a cured product having excellent resolution after curing can be formed.
本発明の感光性樹脂組成物は、ネガ型感光性樹脂組成物であることが好ましい。
また、本発明の感光性樹脂組成物は、h線露光時の感光特性の観点から、パネルレベルパッケージ(例えば、パッケージ基板がなく、代わりにチップの端子から配線を引き出す再配線層により、外部端子につなげる構造のパッケージ)用であることが好ましい。本発明の感光性樹脂組成物は、パネルレベルパッケージ用材料、又は電子部品用材料であることが好ましい。The photosensitive resin composition of the present invention is preferably a negative photosensitive resin composition.
Further, the photosensitive resin composition of the present invention has an external terminal due to a panel level package (for example, a rewiring layer that draws out wiring from a chip terminal instead of having no package substrate) from the viewpoint of photosensitive characteristics during h-line exposure. It is preferable that it is for a package having a structure that can be connected to. The photosensitive resin composition of the present invention is preferably a material for a panel level package or a material for an electronic component.
(A)成分としては、特に制限はされないが、パターニング時の光源にi線を用いた場合の透過率が高く、200℃以下の低温硬化時にも高い硬化物特性を示すポリイミド前駆体が好ましい。 The component (A) is not particularly limited, but a polyimide precursor which has high transmittance when i-ray is used as a light source at the time of patterning and exhibits high cured product characteristics even at low temperature curing of 200 ° C. or lower is preferable.
重合性の不飽和結合としては、炭素炭素の二重結合等が挙げられる。 Examples of the polymerizable unsaturated bond include a carbon-carbon double bond.
(A)成分は、下記式(1)で表される構造単位を有するポリイミド前駆体であることが好ましい。これにより、i線の透過率が高く、200℃以下の低温硬化時にも良好な硬化物を形成できる。
式(1)で表される構造単位の含有量は、(A)成分の全構成単位に対して、50モル%以上であることが好ましく、80モル%以上がより好ましく、90モル%以上がさらに好ましい。上限は特に限定されず、100モル%でもよい。The component (A) is preferably a polyimide precursor having a structural unit represented by the following formula (1). As a result, the i-ray transmittance is high, and a good cured product can be formed even when cured at a low temperature of 200 ° C. or lower.
The content of the structural unit represented by the formula (1) is preferably 50 mol% or more, more preferably 80 mol% or more, and 90 mol% or more with respect to all the constituent units of the component (A). More preferred. The upper limit is not particularly limited, and may be 100 mol%.
式(1)のX1の1以上(好ましくは1〜3、より好ましくは1又は2)の芳香族基を有する4価の基において、芳香族基は、芳香族炭化水素基でもよく、芳香族複素環式基でもよい。芳香族炭化水素基が好ましい。In a tetravalent group having one or more (preferably 1-3, more preferably 1 or 2) aromatic groups of X 1 of the formula (1), the aromatic group may be an aromatic hydrocarbon group and is aromatic. It may be a group heterocyclic group. Aromatic hydrocarbon groups are preferred.
式(1)のX1の芳香族炭化水素基としては、ベンゼン環から形成される2〜4価(2価、3価又は4価)の基、ナフタレンから形成される2〜4価の基、ペリレンから形成される2〜4価の基等が挙げられる。Examples of the aromatic hydrocarbon group of X 1 of the formula (1), a divalent to tetravalent formed from a benzene ring (divalent, trivalent or tetravalent) group, a divalent to tetravalent radical formed from naphthalene , 2-4 valent groups formed from perylene and the like.
式(1)のX1の1以上の芳香族基を有する4価の基としては、例えば以下の式(6)の4価の基が挙げられるが、これらに限定されるものではない。
式(6)において、X及びYの、各々が結合するベンゼン環と共役しない2価の基は、−O−、−S−、メチレン基、ビス(トリフルオロメチル)メチレン基、又はジフルオロメチレン基であることが好ましく、−O−であることがより好ましい。 In formula (6), the divalent groups of X and Y that are not conjugated to the benzene ring to which they are bonded are -O-, -S-, methylene group, bis (trifluoromethyl) methylene group, or difluoromethylene group. Is preferable, and —O— is more preferable.
式(1)のY1の2価の芳香族基は、2価の芳香族炭化水素基でもよく、2価の芳香族複素環式基でもよい。2価の芳香族炭化水素基が好ましい。 The divalent aromatic group of Y 1 of the formula (1) may be a divalent aromatic hydrocarbon group or a divalent aromatic heterocyclic group. A divalent aromatic hydrocarbon group is preferred.
式(1)のY1の2価の芳香族炭化水素基としては、例えば以下の式(7)の基が挙げられるが、これに限定されるものではない。
式(7)のR12〜R19の1価の脂肪族炭化水素基(好ましくは炭素数1〜10、より好ましくは炭素数1〜6)としては、メチル基等が挙げられる。例えば、R12及びR15〜R19が水素原子であり、R13及びR14が1価の脂肪族炭化水素基であってもよい。Examples of the monovalent aliphatic hydrocarbon group (preferably 1 to 10 carbon atoms, more preferably 1 to 6 carbon atoms ) of R 12 to R 19 of the formula (7) include a methyl group and the like. For example, R 12 and R 15 to R 19 may be hydrogen atoms, and R 13 and R 14 may be monovalent aliphatic hydrocarbon groups.
式(7)のR12〜R19のハロゲン原子(好ましくはフッ素原子)を有する1価の有機基は、ハロゲン原子を有する1価の脂肪族炭化水素基(好ましくは炭素数1〜10、より好ましくは炭素数1〜6)が好ましく、トリフルオロメチル基等が挙げられる。 The monovalent organic group having a halogen atom (preferably a fluorine atom) of R 12 to R 19 of the formula (7) is a monovalent aliphatic hydrocarbon group having a halogen atom (preferably having 1 to 10 carbon atoms). The number of carbon atoms is preferably 1 to 6), and examples thereof include a trifluoromethyl group.
式(1)のR1及びR2の炭素数1〜4(好ましくは1又は2)の脂肪族炭化水素基としては、メチル基、エチル基、n−プロピル基、2−プロピル基、n−ブチル基等が挙げられる。 Examples of the aliphatic hydrocarbon group having 1 to 4 carbon atoms (preferably 1 or 2) of R 1 and R 2 of the formula (1) include a methyl group, an ethyl group, an n-propyl group, a 2-propyl group and an n-. Examples include a butyl group.
式(1)のR1及びR2の少なくとも一方が、式(2)で表される基であり、ともに式(2)で表される基であることが好ましい。 It is preferable that at least one of R 1 and R 2 of the formula (1) is a group represented by the formula (2), and both are groups represented by the formula (2).
式(2)のR3〜R5の炭素数1〜3(好ましくは1又は2)の脂肪族炭化水素基としては、メチル基、エチル基、n−プロピル基、2−プロピル基等が挙げられる。メチル基が好ましい。 Examples of the aliphatic hydrocarbon group having 1 to 3 (preferably 1 or 2) carbon atoms of R 3 to R 5 of the formula (2) include a methyl group, an ethyl group, an n-propyl group, a 2-propyl group and the like. Be done. Methyl groups are preferred.
式(1)で表される構造単位を有するポリイミド前駆体は、例えば下記式(8)で表されるテトラカルボン酸二無水物と、下記式(9)で表されるジアミノ化合物とを、N−メチル−2−ピロリドン等の有機溶剤中にて反応させポリアミド酸を得て、下記式(10)で表される化合物を加え、有機溶剤中で反応させ部分的にエステル基を導入することで得ることができる。
式(8)で表されるテトラカルボン酸二無水物及び式(9)で表されるジアミノ化合物は、1種単独で用いてもよく、2種以上を組み合わせてもよい。The polyimide precursor having the structural unit represented by the formula (1) is composed of, for example, a tetracarboxylic acid dianhydride represented by the following formula (8) and a diamino compound represented by the following formula (9). -Methyl-2-pyrrolidone or the like is reacted in an organic solvent to obtain a polyamic acid, a compound represented by the following formula (10) is added, and the reaction is carried out in an organic solvent to partially introduce an ester group. Obtainable.
The tetracarboxylic dianhydride represented by the formula (8) and the diamino compound represented by the formula (9) may be used alone or in combination of two or more.
(A)成分は、式(1)で表される構造単位以外の構造単位を有してもよい。
式(1)で表される構造単位以外の構造単位としては、式(11)で表される構造単位等が挙げられる。
Examples of the structural unit other than the structural unit represented by the formula (1) include the structural unit represented by the formula (11).
式(11)のX2の1以上の芳香族基を有する4価の基は、式(1)のX1の1以上の芳香族基を有する4価の基と同様のものが挙げられる。
式(11)のY2の2価の芳香族基は、式(1)のY1の2価の芳香族基と同様のものが挙げられる。
式(11)のR51及びR52の炭素数1〜4の脂肪族炭化水素基は、R1及びR2の炭素数1〜4の脂肪族炭化水素基と同様のものが挙げられる。 Examples of the tetravalent group having one or more aromatic groups of X 2 of the formula (11) are the same as those of the tetravalent group having one or more aromatic groups of X 1 of the formula (1).
Examples of the Y 2 divalent aromatic group of the formula (11) include those similar to the Y 1 divalent aromatic group of the formula (1).
Examples of the aliphatic hydrocarbon groups having 1 to 4 carbon atoms of R 51 and R 52 of the formula (11) are the same as those of the aliphatic hydrocarbon groups having 1 to 4 carbon atoms of R 1 and R 2.
式(1)で表される構造単位以外の構造単位は、1種単独で用いてもよく、2種以上を組み合わせてもよい。 As the structural unit other than the structural unit represented by the formula (1), one type may be used alone, or two or more types may be combined.
式(1)で表される構造単位以外の構造単位の含有量は、(A)成分の全構成単位に対して、50モル%未満であることが好ましい。 The content of the structural unit other than the structural unit represented by the formula (1) is preferably less than 50 mol% with respect to all the structural units of the component (A).
(A)成分において、全カルボキシ基及び全カルボキシエステルに対して、式(2)で表される基でエステル化されたカルボキシ基の割合が、50モル%以上であることが好ましく、60〜100モル%がより好ましく、70〜90モル%がさらに好ましい。 In the component (A), the ratio of the carboxy group esterified with the group represented by the formula (2) to the total carboxy group and the total carboxy ester is preferably 50 mol% or more, preferably 60 to 100. More preferably mol%, more preferably 70-90 mol%.
(A)成分の分子量に特に制限はないが、数平均分子量で10,000〜200,000であることが好ましい。
数平均分子量は、例えばゲルパーミエーションクロマトグラフィー法によって測定することができ、標準ポリスチレン検量線を用いて換算することによって求めることができる。The molecular weight of the component (A) is not particularly limited, but the number average molecular weight is preferably 10,000 to 200,000.
The number average molecular weight can be measured, for example, by a gel permeation chromatography method and can be determined by conversion using a standard polystyrene calibration curve.
本発明の感光性樹脂組成物は、(B)脂肪族環状骨格(好ましくは炭素数4〜15、より好ましくは5〜12)を有する重合性モノマーを含む。これにより、形成できる硬化物に疎水性を付与でき、高温多湿条件下での硬化物と基板間の接着性低下を抑制できる。 The photosensitive resin composition of the present invention contains (B) a polymerizable monomer having an aliphatic cyclic skeleton (preferably 4 to 15 carbon atoms, more preferably 5 to 12 carbon atoms). As a result, hydrophobicity can be imparted to the cured product that can be formed, and a decrease in adhesiveness between the cured product and the substrate under high temperature and high humidity conditions can be suppressed.
(B)成分は、(好ましくは2以上の)重合性の不飽和二重結合を含む基(好ましくは、光重合開始剤により重合可能であることから、(メタ)アクリル基)を有し、脂肪族環状骨格を有する重合性モノマーを含むことが好ましく、架橋密度及び光感度の向上、現像後のパターンの膨潤の抑制のため、2〜3の、重合性の不飽和二重結合を含む基を、有することが好ましい。 The component (B) has a group containing a polymerizable unsaturated double bond (preferably two or more) (preferably a (meth) acrylic group because it can be polymerized by a photopolymerization initiator). It is preferable to contain a polymerizable monomer having an aliphatic cyclic skeleton, and in order to improve the crosslink density and photosensitivity and suppress the swelling of the pattern after development, a group containing 2 to 3 polymerizable unsaturated double bonds. It is preferable to have.
(B)成分は、下記式(3)で表される重合性モノマーを含むことが好ましい。
R7が2つの場合、2つのR7は同一でもよく、異なっていてもよい。When R 7 is two, the two R 7 may be the same or may be different.
(B)成分は、下記式(5)で表される重合性モノマーを含むことがより好ましい。
また、(B)成分として、例えば以下の重合性モノマーを用いてもよい。 Further, as the component (B), for example, the following polymerizable monomer may be used.
R21が2以上存在する場合、2以上のR21は同一でもよく、異なっていてもよい。
R22が2以上存在する場合、2以上のR22は同一でもよく、異なっていてもよい。When two or more R 21s are present, the two or more R 21s may be the same or different.
When two or more R 22s are present, the two or more R 22s may be the same or different.
n3個のR21の少なくとも1つ(好ましくは2又は3)は、上記式(4)で表される基である。
n4個のR22の少なくとも1つ(好ましくは2又は3)は、上記式(4)で表される基である。
n5個のR23及びn6個のR24の少なくとも1つ(好ましくは2)は、上記式(4)で表される基である。At least one (preferably 2 or 3) of n3 R 21s is a group represented by the above formula (4).
At least one (preferably 2 or 3) of n4 R 22s is a group represented by the above formula (4).
At least one (preferably 2) of n5 R 23 and n 6 R 24 is a group represented by the above formula (4).
式(3)のR6及びR7及び式(12)のR21〜R24の炭素数1〜4の脂肪族炭化水素基としては、式(1)のR1及びR2の炭素数1〜4の脂肪族炭化水素基と同様のものが挙げられる。As the aliphatic hydrocarbon group having 1 to 4 carbon atoms of R 6 and R 7 of the formula (3) and R 21 to R 24 of the formula (12), the carbon number 1 of R 1 and R 2 of the formula (1) The same as the aliphatic hydrocarbon group of ~ 4 can be mentioned.
式(4)のR9〜R11の炭素数1〜3の脂肪族炭化水素基としては、式(2)のR3〜R5の炭素数1〜3の脂肪族炭化水素基と同様のものが挙げられる。The aliphatic hydrocarbon group having 1 to 3 carbon atoms of R 9 to R 11 of the formula (4) is the same as the aliphatic hydrocarbon group having 1 to 3 carbon atoms of R 3 to R 5 of the formula (2). Things can be mentioned.
(B)成分は、1種単独で用いてもよく、2種以上を組み合わせてもよい。 The component (B) may be used alone or in combination of two or more.
(B)成分の含有量は、(A)成分100質量部に対して、1〜50質量部が好ましい。硬化物の疎水性向上の観点から、より好ましくは3〜50質量部、さらに好ましくは5〜35質量部である。
上記範囲内である場合、実用的なレリ−フパターンが得られやすく、未露光部の現像後残滓を抑制しやすい。The content of the component (B) is preferably 1 to 50 parts by mass with respect to 100 parts by mass of the component (A). From the viewpoint of improving the hydrophobicity of the cured product, it is more preferably 3 to 50 parts by mass, and further preferably 5 to 35 parts by mass.
When it is within the above range, a practical relief pattern can be easily obtained, and post-development residue in the unexposed portion can be easily suppressed.
(C)成分としては、例えば、ベンゾフェノン、o−ベンゾイル安息香酸メチル、4−ベンゾイル−4’−メチルジフェニルケトン、ジベンジルケトン、フルオレノン等のベンゾフェノン誘導体、
2,2’−ジエトキシアセトフェノン、2−ヒドロキシ−2−メチルプロピオフェノン、1−ヒドロキシシクロヘキシルフェニルケトン等のアセトフェノン誘導体、
チオキサントン、2−メチルチオキサントン、2−イソプロピルチオキサントン、ジエチルチオキサントン等のチオキサントン誘導体、
ベンジル、ベンジルジメチルケタール、ベンジル−β−メトキシエチルアセタール等のベンジル誘導体、
ベンゾイン、ベンゾインメチルエーテル等のベンゾイン誘導体、及び
1−フェニル−1,2−ブタンジオン−2−(O−メトキシカルボニル)オキシム、1−フェニル−1,2−プロパンジオン−2−(O−メトキシカルボニル)オキシム、1−フェニル−1,2−プロパンジオン−2−(O−エトキシカルボニル)オキシム、1−フェニル−1,2−プロパンジオン−2−(O−ベンゾイル)オキシム、1,3−ジフェニルプロパントリオン−2−(O−エトキシカルボニル)オキシム、1−フェニル−3−エトキシプロパントリオン−2−(O−ベンゾイル)オキシム、エタノン,1−[9−エチル−6−(2−メチルベンゾイル)−9H−カルバゾール−3−イル]−,1−(O−アセチルオキシム)、下記式で表される化合物等のオキシムエステル類などが好ましく挙げられるが、これらに限定されるものではない。
Acetophenone derivatives such as 2,2'-diethoxyacetophenone, 2-hydroxy-2-methylpropiophenone, 1-hydroxycyclohexylphenyl ketone, etc.
Thioxantone derivatives such as thioxanthone, 2-methylthioxanthone, 2-isopropylthioxanthone, diethyl thioxanthone,
Benzyl derivatives such as benzyl, benzyl dimethyl ketal, benzyl-β-methoxyethyl acetal, etc.
Benzoin derivatives such as benzoin and benzoin methyl ether, and 1-phenyl-1,2-butandion-2- (O-methoxycarbonyl) oxime, 1-phenyl-1,2-propanedione-2- (O-methoxycarbonyl) Oxime, 1-phenyl-1,2-propanedione-2- (O-ethoxycarbonyl) oxime, 1-phenyl-1,2-propanedione-2- (O-benzoyl) oxime, 1,3-diphenylpropanthrion -2- (O-ethoxycarbonyl) oxime, 1-phenyl-3-ethoxypropanthrion-2- (O-benzoyl) oxime, etanone, 1- [9-ethyl-6- (2-methylbenzoyl) -9H- Carbazole-3-yl]-, 1- (O-acetyloxime), oxime esters such as compounds represented by the following formulas are preferable, but the present invention is not limited thereto.
特に光感度の点で、オキシムエステル類が好ましい。 Oxime esters are particularly preferable in terms of photosensitivity.
(C)成分は、(C1)下記式(15)で表される化合物(以下、「(C1)成分」ともいう。)を含有することが好ましい。
(C1)成分は、活性光線に対する感度が後述する(C2)成分より高いことが好ましく、高感度な感光剤であることが好ましい。The component (C) preferably contains (C1) a compound represented by the following formula (15) (hereinafter, also referred to as “component (C1)”).
The component (C1) preferably has a higher sensitivity to active light than the component (C2) described later, and is preferably a highly sensitive photosensitizer.
R11Aは、好ましくは炭素数1〜4のアルキル基であり、より好ましくはメチル基である。a1は好ましくは1である。R12Aは、好ましくは炭素数1〜4のアルキル基であり、より好ましくはエチル基である。R13A及びR14Aは、好ましくはそれぞれ独立に炭素数1〜4のアルキル基であり、より好ましくはメチル基である。R 11A is preferably an alkyl group having 1 to 4 carbon atoms, and more preferably a methyl group. a1 is preferably 1. R 12A is preferably an alkyl group having 1 to 4 carbon atoms, and more preferably an ethyl group. R 13A and R 14A are preferably alkyl groups having 1 to 4 carbon atoms independently of each other, and more preferably methyl groups.
式(15)で表される化合物としては、例えば、下記式(15A)で表される化合物が挙げられ、BASFジャパン株式会社製「IRGACURE OXE 02」として入手可能である。
また、(C)成分は、(C2)下記式(16)で表される化合物(以下、「(C2)成分」ともいう。)を含有することが好ましい。
(C2)成分は、活性光線に対する感度が(C1)成分より低いことが好ましく、標準的な感度の感光剤であることが好ましい。Further, the component (C) preferably contains (C2) a compound represented by the following formula (16) (hereinafter, also referred to as “component (C2)”).
The component (C2) preferably has a lower sensitivity to active light than the component (C1), and is preferably a photosensitizer having a standard sensitivity.
c1は好ましくは0である。R22Aは、好ましくは炭素数1〜4のアルキル基であり、より好ましくはメチル基である。R23Aは、好ましくは炭素数1〜12のアルコキシ基であり、より好ましくは炭素数1〜4のアルコキシ基であり、さらに好ましくはメトキシ基又はエトキシ基である。c1 is preferably 0. R 22A is preferably an alkyl group having 1 to 4 carbon atoms, and more preferably a methyl group. R 23A is preferably an alkoxy group having 1 to 12 carbon atoms, more preferably an alkoxy group having 1 to 4 carbon atoms, and further preferably a methoxy group or an ethoxy group.
式(16)で表される化合物としては、例えば下記式(16A)で表される化合物が挙げられ、Lambson社製「G−1820(PDO)」として入手可能である。
(C)成分は、1種単独で用いてもよく、2種以上を組み合わせてもよい。 The component (C) may be used alone or in combination of two or more.
(C)成分は、(C1)成分及び(C2)成分からなる群から選択される1以上を含むことが好ましい。
また、(C)成分は、(C1)成分及び(C2)成分を含むことが好ましい。The component (C) preferably contains one or more selected from the group consisting of the component (C1) and the component (C2).
Further, the component (C) preferably contains the component (C1) and the component (C2).
(C)成分の含有量は、(A)成分100質量部に対して、0.1〜20質量部が好ましく、より好ましくは0.1〜15質量部であり、さらに好ましくは0.2〜10質量部である。
上記範囲内の場合、光架橋が膜厚方向で均一となりやすく、実用的なレリ−フパターンを得やすくなる。The content of the component (C) is preferably 0.1 to 20 parts by mass, more preferably 0.1 to 15 parts by mass, and further preferably 0.2 to 20 parts by mass with respect to 100 parts by mass of the component (A). It is 10 parts by mass.
Within the above range, the photocrosslinking tends to be uniform in the film thickness direction, and a practical relief pattern can be easily obtained.
(C1)成分を含有する場合、(C1)成分の含有量は、通常、(A)成分100質量部に対して0.05〜5.0質量部であり、好ましくは0.07〜2.5質量部であり、より好ましくは0.09〜1.0質量部である。 When the component (C1) is contained, the content of the component (C1) is usually 0.05 to 5.0 parts by mass with respect to 100 parts by mass of the component (A), preferably 0.07 to 2. It is 5 parts by mass, more preferably 0.09 to 1.0 parts by mass.
(C2)成分を含有する場合、(C2)成分の含有量は、通常、(A)成分100質量部に対して0.5〜15.0質量部であり、好ましくは1.0〜13.0質量部である。 When the component (C2) is contained, the content of the component (C2) is usually 0.5 to 15.0 parts by mass with respect to 100 parts by mass of the component (A), preferably 1.0 to 13. It is 0 parts by mass.
(C1)成分及び(C2)成分を含有する場合、(C1)成分の含有量が(A)成分100質量部に対して0.05〜5.0質量部であり、かつ、(C2)成分の含有量が(A)成分100質量部に対して0.5〜15.0質量部であると好ましい。 When the component (C1) and the component (C2) are contained, the content of the component (C1) is 0.05 to 5.0 parts by mass with respect to 100 parts by mass of the component (A), and the component (C2) is contained. The content of (A) is preferably 0.5 to 15.0 parts by mass with respect to 100 parts by mass of the component.
(C1)成分及び(C2)成分を含有する場合、(C1)成分と(C2)成分の含有量の質量比は、好ましくは1:30〜1:70であり、より好ましくは1:35〜1:65である。 When the component (C1) and the component (C2) are contained, the mass ratio of the contents of the component (C1) and the component (C2) is preferably 1:30 to 1:70, more preferably 1:35 to 1. It is 1:65.
(D)成分は、感度と解像度の両立の観点から、下記式(31)で表される化合物を含むことが好ましい。
炭素数1〜10(好ましくは1〜6、より好ましくは2〜5)のアルキル基としては、メチル基、エチル基、t−ブチル基、n−ブチル基等が挙げられる。
炭素数1〜10(好ましくは1〜6、より好ましくは2〜5)のアルコキシ基としては、ブトキシ基(例えばn−ブトキシ基)、メトキシ基、エトキシ基等が挙げられる。Examples of the alkyl group having 1 to 10 carbon atoms (preferably 1 to 6, more preferably 2 to 5) include a methyl group, an ethyl group, a t-butyl group, an n-butyl group and the like.
Examples of the alkoxy group having 1 to 10 carbon atoms (preferably 1 to 6, more preferably 2 to 5) include a butoxy group (for example, n-butoxy group), a methoxy group, an ethoxy group and the like.
炭素数6〜18(好ましくは6〜12、より好ましくは6〜10)のアリール基としては、フェニル基、ナフチル基等が挙げられる。
原子数5〜18(好ましくは5〜12、より好ましくは5〜10)のヘテロアリール基としては、ピリジル基、キノリニル基、カルバゾリル基等が挙げられる。Examples of the aryl group having 6 to 18 carbon atoms (preferably 6 to 12, more preferably 6 to 10) include a phenyl group and a naphthyl group.
Examples of the heteroaryl group having 5 to 18 atoms (preferably 5 to 12, more preferably 5 to 10) include a pyridyl group, a quinolinyl group, a carbazolyl group and the like.
また、(D)成分は、感光性樹脂組成物への溶解性と感光特性の両立の観点から、置換基を有してもよいジアルコキシアントラセン(例えば9,10ジアルコキシアントラセン)が好ましく、ジブトキシアントラセン(例えば9,10ジブトキシアントラセン)、ジメトキシアントラセン(例えば9,10ジメトキシアントラセン)、ジエトキシアントラセン(例えば9,10ジエトキシアントラセン)、及びジエトキシエチルアントラセン(例えば9,10ジメトキシ―2エチルアントラセン)からなる群から選択される1以上であることが好ましい。
置換基としては、メチル基、エチル基、t−ブチル基、n−ブチル基等が挙げられる。Further, the component (D) is preferably dialkoxyanthracene (for example, 9,10 dialkoxyanthracene) which may have a substituent from the viewpoint of achieving both solubility in the photosensitive resin composition and photosensitive characteristics. Butoxyanthracene (eg 9,10 dibutoxyanthracene), dimethoxyanthracene (eg 9,10 dimethoxyanthracene), diethoxyanthracene (eg 9,10 diethoxyanthracene), and diethoxyethyl anthracene (eg 9,10 dimethoxy-2 ethyl) It is preferably 1 or more selected from the group consisting of anthracene).
Examples of the substituent include a methyl group, an ethyl group, a t-butyl group, an n-butyl group and the like.
(D)成分は、1種単独で用いてもよく、2種以上を組み合わせてもよい。 The component (D) may be used alone or in combination of two or more.
(D)成分の含有量は、(A)成分100質量部に対して、0.1〜20質量部が好ましく、より好ましくは0.2〜10質量部であり、さらに好ましくは0.3〜5質量部である。
上記範囲内の場合、感光性樹脂組成物への溶解性と感光特性の向上とを両立できる。The content of the component (D) is preferably 0.1 to 20 parts by mass, more preferably 0.2 to 10 parts by mass, and further preferably 0.3 to 20 parts by mass with respect to 100 parts by mass of the component (A). 5 parts by mass.
When it is within the above range, it is possible to achieve both solubility in the photosensitive resin composition and improvement of the photosensitive characteristics.
本発明の感光性樹脂組成物は、(E)溶剤を含む。
(E)成分としては、N−メチル−2−ピロリドン、γ−ブチロラクトン、乳酸エチル、プロピレングリコールモノメチルエーテルアセテート、酢酸ベンジル、n−ブチルアセテート、エトキシエチルプロピオネート、3−メチルメトキシプロピオネート、N,N−ジメチルホルムアミド、N,N−ジメチルアセトアミド、ジメチルスルホキシド、ヘキサメチルホスホリルアミド、テトラメチレンスルホン、シクロヘキサノン、シクロペンタノン、ジエチルケトン、ジイソブチルケトン、メチルアミルケトン、N−ジメチルモルホリン等が挙げられ、通常、他の成分を充分に溶解できるものであれば特に制限はない。
この中でも、各成分の溶解性と感光性樹脂膜形成時の塗布性に優れる観点から、N−メチル−2−ピロリドン、γ−ブチロラクトン、乳酸エチル、プロピレングリコールモノメチルエーテルアセテート、N,N−ジメチルホルムアミド、N,N−ジメチルアセトアミドを用いることが好ましい。The photosensitive resin composition of the present invention contains (E) a solvent.
As the component (E), N-methyl-2-pyrrolidone, γ-butyrolactone, ethyl lactate, propylene glycol monomethyl ether acetate, benzyl acetate, n-butyl acetate, ethoxyethyl propionate, 3-methylmethoxypropionate, Examples thereof include N, N-dimethylformamide, N, N-dimethylacetamide, dimethylsulfoxide, hexamethylphosphorylamide, tetramethylene sulfone, cyclohexanone, cyclopentanone, diethylketone, diisobutylketone, methylamylketone, N-dimethylmorpholin and the like. Usually, there is no particular limitation as long as other components can be sufficiently dissolved.
Among these, N-methyl-2-pyrrolidone, γ-butyrolactone, ethyl lactate, propylene glycol monomethyl ether acetate, N, N-dimethylformamide from the viewpoint of excellent solubility of each component and coating property at the time of forming a photosensitive resin film. , N, N-dimethylacetamide is preferably used.
また、(E)成分としては、下記式(21)で表される化合物を用いてもよい。
式(21)中におけるR41〜R43の炭素数1〜10(好ましくは1〜3、より好ましくは1又は3)のアルキル基としては、メチル基、エチル基、n−プロピル基、イソプロピル基、n−ブチル基、t−ブチル基、ペンチル基、ヘキシル基、ヘプチル基、オクチル基等を挙げることができる。
式(21)で表される化合物は、3−メトキシ−N,N−ジメチルプロパンアミド(例えば、商品名「KJCMPA−100」(KJケミカルズ株式会社製))であることが好ましい。Examples of the alkyl group having 1 to 10 carbon atoms (preferably 1 to 3, more preferably 1 or 3) of R 41 to R 43 in the formula (21) include a methyl group, an ethyl group, an n-propyl group and an isopropyl group. , N-butyl group, t-butyl group, pentyl group, hexyl group, heptyl group, octyl group and the like.
The compound represented by the formula (21) is preferably 3-methoxy-N, N-dimethylpropanamide (for example, trade name "KJCMPA-100" (manufactured by KJ Chemicals Co., Ltd.)).
(E)成分は、1種単独で用いてもよく、2種以上を組み合わせてもよい。
(E)成分の含有量は、特に限定されないが、一般的に、(A)成分100質量部に対して、50〜1000質量部である。The component (E) may be used alone or in combination of two or more.
The content of the component (E) is not particularly limited, but is generally 50 to 1000 parts by mass with respect to 100 parts by mass of the component (A).
本発明の感光性樹脂組成物は、重合反応の促進の観点から、さらに、(F)熱重合開始剤(以下、「(F)成分」ともいう。)を含んでもよい。
(F)成分としては、成膜時に溶剤を除去するための加熱(乾燥)では分解せず、硬化時の加熱により分解してラジカルを発生し、(B)成分同士、又は(A)成分及び(B)成分の重合反応を促進する化合物が好ましい。
(F)成分は分解点が、110℃以上200℃以下の化合物が好ましく、より低温で重合反応を促進する観点から、110℃以上175℃以下の化合物がより好ましい。From the viewpoint of accelerating the polymerization reaction, the photosensitive resin composition of the present invention may further contain (F) a thermal polymerization initiator (hereinafter, also referred to as “component (F)”).
As the component (F), it is not decomposed by heating (drying) for removing the solvent at the time of film formation, but is decomposed by heating at the time of curing to generate radicals, and the components (B) or (A) and A compound that promotes the polymerization reaction of the component (B) is preferable.
The component (F) preferably has a decomposition point of 110 ° C. or higher and 200 ° C. or lower, and more preferably 110 ° C. or higher and 175 ° C. or lower from the viewpoint of promoting the polymerization reaction at a lower temperature.
具体例としては、メチルエチルケトンペルオキシド等のケトンペルオキシド、1,1−ジ(t−ヘキシルパーオキシ)−3,3,5−トリメチルシクロヘキサン、1,1−ジ(t−ヘキシルパーオキシ)シクロヘキサン、1,1−ジ(t−ブチルパーオキシ)シクロヘキサン等のパーオキシケタール、1,1,3,3−テトラメチルブチルハイドロペルオキシド、クメンハイドロペルオキシド、p−メンタンハイドロペルオキシド等のハイドロペルオキシド、ジクミルペルオキシド、ジ−t−ブチルペルオキシド等のジアルキルペルオキシド、ジラウロイルペルオキシド、ジベンゾイルペルオキシド等のジアシルペルオキシド、ジ(4−t−ブチルシクロヘキシル)パーオキシジカーボネート、ジ(2−エチルヘキシル)パーオキシジカーボネート等のパーオキシジカーボネート、t−ブチルパーオキシ−2−エチルヘキサノエート、t−ヘキシルパーオキシイソプロピルモノカーボネート、t−ブチルパーオキシベンゾエート、1,1,3,3−テトラメチルブチルパーオキシ−2−エチルヘキサノエート等のパーオキシエステル、ビス(1−フェニル−1−メチルエチル)ペルオキシドなどが挙げられる。市販品としては、商品名「パークミルD」、「パークミルP」、「パークミルH」(以上、日油株式会社製)等が挙げられる。 Specific examples include ketone peroxides such as methyl ethyl ketone peroxide, 1,1-di (t-hexyl peroxide) -3,3,5-trimethylcyclohexane, 1,1-di (t-hexylperoxy) cyclohexane, 1, Peroxyketal such as 1-di (t-butylperoxy) cyclohexane, hydroperoxides such as 1,1,3,3-tetramethylbutylhydroperoxide, cumenehydroperoxide, p-mentan hydroperoxide, dicumylperoxide, di. Dialkyl peroxides such as -t-butyl peroxide, diacyl peroxides such as dilauroyl peroxide and dibenzoyl peroxide, peroxy such as di (4-t-butylcyclohexyl) peroxydicarbonate and di (2-ethylhexyl) peroxydicarbonate. Dicarbonate, t-butylperoxy-2-ethylhexanoate, t-hexylperoxyisopropyl monocarbonate, t-butylperoxybenzoate, 1,1,3,3-tetramethylbutylperoxy-2-ethylhexa Peroxyesters such as Noate, bis (1-phenyl-1-methylethyl) peroxide and the like can be mentioned. Examples of commercially available products include trade names "Park Mill D", "Park Mill P", "Park Mill H" (all manufactured by NOF CORPORATION) and the like.
(F)成分を含有する場合、(F)成分の含有量は、(A)成分100質量部に対して、0.1〜20質量部が好ましく、良好な耐フラックス性の確保のために0.2〜20質量部がより好ましく、乾燥時の分解による溶解性低下抑制の観点から、0.3〜10質量部がさらに好ましい。 When the component (F) is contained, the content of the component (F) is preferably 0.1 to 20 parts by mass with respect to 100 parts by mass of the component (A), and is 0 to ensure good flux resistance. .2 to 20 parts by mass is more preferable, and 0.3 to 10 parts by mass is further preferable from the viewpoint of suppressing a decrease in solubility due to decomposition during drying.
本発明の感光性樹脂組成物は、さらに、カップリング剤(接着助剤)、界面活性剤又はレベリング剤、防錆剤、(B)成分以外の架橋剤、増感剤及び重合禁止剤等を含有してもよい。 The photosensitive resin composition of the present invention further contains a coupling agent (adhesive aid), a surfactant or a leveling agent, a rust preventive, a cross-linking agent other than the component (B), a sensitizer, a polymerization inhibitor and the like. It may be contained.
通常、カップリング剤は、現像後の加熱処理において、(A)成分と反応して架橋する、又は加熱処理する工程においてカップリング剤自身が重合する。これにより、得られる硬化物と基板との接着性をより向上させることができる。 Usually, the coupling agent reacts with the component (A) in the heat treatment after development to crosslink, or the coupling agent itself polymerizes in the step of heat treatment. Thereby, the adhesiveness between the obtained cured product and the substrate can be further improved.
好ましいシランカップリング剤としては、ウレア結合(−NH−CO−NH−)を有する化合物が挙げられる。これにより、200℃以下の低温下で硬化を行った場合も基板との接着性をさらに高めることができる。
低温での硬化を行った際の接着性の発現に優れるため、下記式(13)で表される化合物がより好ましい。
The compound represented by the following formula (13) is more preferable because it is excellent in the development of adhesiveness when cured at a low temperature.
式(13)で表される化合物の具体例としては、ウレイドメチルトリメトキシシラン、ウレイドメチルトリエトキシシラン、2−ウレイドエチルトリメトキシシラン、2−ウレイドエチルトリエトキシシラン、3−ウレイドプロピルトリメトキシシラン、3−ウレイドプロピルトリエトキシシラン、4−ウレイドブチルトリメトキシシラン、4−ウレイドブチルトリエトキシシラン等が挙げられ、好ましくは3−ウレイドプロピルトリエトキシシランである。 Specific examples of the compound represented by the formula (13) include ureidomethyltrimethoxysilane, ureidomethyltriethoxysilane, 2-ureidoethyltrimethoxysilane, 2-ureidoethyltriethoxysilane, and 3-ureidopropyltrimethoxysilane. , 3-Ureidopropyltriethoxysilane, 4-ureidobutyltrimethoxysilane, 4-ureidobutyltriethoxysilane and the like, preferably 3-ureidopropyltriethoxysilane.
シランカップリング剤として、ヒドロキシ基又はグリシジル基を有するシランカップリング剤を用いてもよい。ヒドロキシ基又はグリシジル基を有するシランカップリング剤、及び分子内にウレア結合を有するシランカップリング剤を併用すると、さらに低温硬化時の硬化物の基板への接着性を向上することができる。
ヒドロキシ基又はグリシジル基を有するシランカップリング剤としては、メチルフェニルシランジオール、エチルフェニルシランジオール、n−プロピルフェニルシランジオール、イソプロピルフェニルシランジオール、n−ブチルフェニルシランジオール、イソブチルフェニルシランジオール、tert−ブチルフェニルシランジオール、ジフェニルシランジオール、エチルメチルフェニルシラノール、n−プロピルメチルフェニルシラノール、イソプロピルメチルフェニルシラノール、n−ブチルメチルフェニルシラノール、イソブチルメチルフェニルシラノール、tert−ブチルメチルフェニルシラノール、エチルn−プロピルフェニルシラノール、エチルイソプロピルフェニルシラノール、n−ブチルエチルフェニルシラノール、イソブチルエチルフェニルシラノール、tert−ブチルエチルフェニルシラノール、メチルジフェニルシラノール、エチルジフェニルシラノール、n−プロピルジフェニルシラノール、イソプロピルジフェニルシラノール、n−ブチルジフェニルシラノール、イソブチルジフェニルシラノール、tert−ブチルジフェニルシラノール、フェニルシラントリオール、1,4−ビス(トリヒドロキシシリル)ベンゼン、1,4−ビス(メチルジヒドロキシシリル)ベンゼン、1,4−ビス(エチルジヒドロキシシリル)ベンゼン、1,4−ビス(プロピルジヒドロキシシリル)ベンゼン、1,4−ビス(ブチルジヒドロキシシリル)ベンゼン、1,4−ビス(ジメチルヒドロキシシリル)ベンゼン、1,4−ビス(ジエチルヒドロキシシリル)ベンゼン、1,4−ビス(ジプロピルヒドロキシシリル)ベンゼン、1,4−ビス(ジブチルヒドロキシシリル)ベンゼン、及び下記式(14)で表わされる化合物等が挙げられる。中でも、特に、基板との接着性をより向上させるため、式(14)で表される化合物が好ましい。As the silane coupling agent, a silane coupling agent having a hydroxy group or a glycidyl group may be used. When a silane coupling agent having a hydroxy group or a glycidyl group and a silane coupling agent having a urea bond in the molecule are used in combination, the adhesiveness of the cured product during low temperature curing to the substrate can be further improved.
Examples of the silane coupling agent having a hydroxy group or a glycidyl group include methylphenylsilanediol, ethylphenylsilanediol, n-propylphenylsilanediol, isopropylphenylsilanediol, n-butylphenylsilanediol, isobutylphenylsilanediol, and tert-. Butylphenylsilanediol, diphenylsilanediol, ethylmethylphenylsilanol, n-propylmethylphenylsilanol, isopropylmethylphenylsilanol, n-butylmethylphenylsilanol, isobutylmethylphenylsilanol, tert-butylmethylphenylsilanol, ethyl n-propylphenyl Silanol, ethylisopropylphenylsilanol, n-butylethylphenylsilanol, isobutylethylphenylsilanol, tert-butylethylphenylsilanol, methyldiphenylsilanol, ethyldiphenylsilanol, n-propyldiphenylsilanol, isopropyldiphenylsilanol, n-butyldiphenylsilanol, Isobutyldiphenylsilanol, tert-butyldiphenylsilanol, phenylsilanetriol, 1,4-bis (trihydroxysilyl) benzene, 1,4-bis (methyldihydroxysilyl) benzene, 1,4-bis (ethyldihydroxysilyl) benzene, 1,4-Bis (propyldihydroxysilyl) benzene, 1,4-bis (butyldihydroxysilyl) benzene, 1,4-bis (dimethylhydroxysilyl) benzene, 1,4-bis (diethylhydroxysilyl) benzene, 1, Examples thereof include 4-bis (dipropylhydroxysilyl) benzene, 1,4-bis (dibutylhydroxysilyl) benzene, and a compound represented by the following formula (14). Of these, the compound represented by the formula (14) is particularly preferable in order to further improve the adhesiveness to the substrate.
式(14)で表される化合物としては、ヒドロキシメチルトリメトキシシラン、ヒドロキシメチルトリエトキシシラン、2−ヒドロキシエチルトリメトキシシラン、2−ヒドロキシエチルトリエトキシシラン、3−ヒドロキシプロピルトリメトキシシラン、3−ヒドロキシプロピルトリエトキシシラン、4−ヒドロキシブチルトリメトキシシラン、4−ヒドロキシブチルトリエトキシシラン、グリシドキシメチルトリメトキシシラン、グリシドキシメチルトリエトキシシラン、2−グリシドキシエチルトリメトキシシラン、2−グリシドキシエチルトリエトキシシラン、3−グリシドキシプロピルトリメトキシシラン、3−グリシドキシプロピルトリエトキシシラン、4−グリシドキシブチルトリメトキシシラン、4−グリシドキシブチルトリエトキシシラン等が挙げられる。 Examples of the compound represented by the formula (14) include hydroxymethyltrimethoxysilane, hydroxymethyltriethoxysilane, 2-hydroxyethyltrimethoxysilane, 2-hydroxyethyltriethoxysilane, 3-hydroxypropyltrimethoxysilane, 3-. Hydroxypropyltriethoxysilane, 4-hydroxybutyltrimethoxysilane, 4-hydroxybutyltriethoxysilane, glycidoxymethyltrimethoxysilane, glycidoxymethyltriethoxysilane, 2-glycidoxyethyltrimethoxysilane, 2- Glycydoxyethyl triethoxysilane, 3-glycidoxypropyltrimethoxysilane, 3-glycidoxypropyltriethoxysilane, 4-glycidoxybutyltrimethoxysilane, 4-glycidoxybutyltriethoxysilane, etc. Be done.
ヒドロキシ基又はグリシジル基を有するシランカップリング剤は、さらに、窒素原子を有する基を含むことが好ましく、さらにアミノ基又はアミド結合を有するシランカップリング剤が好ましい。
さらにアミノ基を有するシランカップリング剤としては、ビス(2−ヒドロキシメチル)−3−アミノプロピルトリエトキシシラン、ビス(2−ヒドロキシメチル)−3−アミノプロピルトリメトキシシラン、ビス(2−グリシドキシメチル)−3−アミノプロピルトリエトキシシラン、ビス(2−ヒドロキシメチル)−3−アミノプロピルトリメトキシシラン等が挙げられる。The silane coupling agent having a hydroxy group or a glycidyl group preferably further contains a group having a nitrogen atom, and further preferably a silane coupling agent having an amino group or an amide bond.
Further, examples of the silane coupling agent having an amino group include bis (2-hydroxymethyl) -3-aminopropyltriethoxysilane, bis (2-hydroxymethyl) -3-aminopropyltrimethoxysilane, and bis (2-glycid). Examples thereof include xymethyl) -3-aminopropyltriethoxysilane and bis (2-hydroxymethyl) -3-aminopropyltrimethoxysilane.
さらにアミド結合を有するシランカップリング剤としては、R36−(CH2)e−CO−NH−(CH2)f−Si(OR37)3(R36はヒドロキシ基又はグリシジル基であり、e及びfは、それぞれ独立に、1〜3の整数であり、R37はメチル基、エチル基又はプロピル基である)で表される化合物等が挙げられる。Still silane coupling agent having an amide bond, R 36 - (CH 2) e -CO-NH- (CH 2) f -Si (OR 37) 3 (R 36 is a hydroxy group or a glycidyl group, e And f are independently integers of 1 to 3 and R 37 is a methyl group, an ethyl group or a propyl group).
シランカップリング剤は、1種単独で用いてもよく、2種以上を組み合わせてもよい。 The silane coupling agent may be used alone or in combination of two or more.
シランカップリング剤を用いる場合、シランカップリング剤の含有量は、(A)成分100質量部に対して、0.1〜20質量部が好ましく、0.3〜10質量部がより好ましく、1〜10質量部がさらに好ましい。 When a silane coupling agent is used, the content of the silane coupling agent is preferably 0.1 to 20 parts by mass, more preferably 0.3 to 10 parts by mass, based on 100 parts by mass of the component (A). 10 parts by mass is more preferable.
界面活性剤又はレベリング剤を含むことで、塗布性(例えばストリエーション(膜厚のムラ)の抑制)及び現像性を向上させることができる。 By containing a surfactant or a leveling agent, coatability (for example, suppression of striation (unevenness of film thickness)) and developability can be improved.
界面活性剤又はレベリング剤としては、例えば、ポリオキシエチレンラウリルエーテル、ポリオキシエチレンステアリルエーテル、ポリオキシエチレンオレイルエーテル、ポリオキシエチレンオクチルフェノールエーテル等が挙げられ、市販品としては、商品名「メガファックF171」、「F173」、「R−08」(以上、DIC株式会社製)、商品名「フロラードFC430」、「FC431」(以上、住友スリーエム株式会社製)、商品名「オルガノシロキサンポリマーKP341」、「KBM303」、「KBM403」、「KBM803」(以上、信越化学工業株式会社製)等が挙げられる。 Examples of the surfactant or leveling agent include polyoxyethylene lauryl ether, polyoxyethylene stearyl ether, polyoxyethylene oleyl ether, polyoxyethylene octylphenol ether and the like, and commercially available products include the trade name "Megafuck F171". , "F173", "R-08" (above, manufactured by DIC Co., Ltd.), product name "Florard FC430", "FC431" (above, manufactured by Sumitomo 3M Co., Ltd.), trade name "Organosiloxane Polymer KP341", " Examples thereof include "KBM303", "KBM403", and "KBM803" (all manufactured by Shin-Etsu Chemical Industry Co., Ltd.).
界面活性剤及びレベリング剤は、1種単独で用いてもよく、2種以上を組み合わせてもよい。 The surfactant and the leveling agent may be used alone or in combination of two or more.
界面活性剤又はレベリング剤を含む場合、界面活性剤又はレベリング剤の含有量は、(A)成分100質量部に対して0.01〜10質量部が好ましく、0.05〜5質量部がより好ましく、0.05〜3質量部がさらに好ましい。 When a surfactant or a leveling agent is contained, the content of the surfactant or the leveling agent is preferably 0.01 to 10 parts by mass, more preferably 0.05 to 5 parts by mass with respect to 100 parts by mass of the component (A). It is preferable, and more preferably 0.05 to 3 parts by mass.
防錆剤を含むことで、銅及び銅合金の腐食の抑制や変色の防止ができる。
防錆剤としては、例えば、トリアゾール誘導体及びテトラゾール誘導体等が挙げられる。
防錆剤としては、5−アミノテトラゾール(例えば5−アミノ−1H−テトラゾール)、ベンゾトリアゾール、1−ヒドロキシベンゾトリアゾール、1H−ベンゾトリアゾール−1−アセトニトリル、ベンゾトリアゾール−5−カルボン酸、1H−ベンゾトリアゾール−1−メタノール、カルボキシベンゾトリアゾール、メルカプトベンゾオキサゾール等が挙げられる。これらの中でも、5−アミノテトラゾール、ベンゾトリアゾール又は1−ヒドロキシベンゾトリアゾールが好ましい。
防錆剤は、1種単独で用いてもよく、2種以上を組み合わせてもよい。By containing a rust preventive, it is possible to suppress corrosion and prevent discoloration of copper and copper alloys.
Examples of the rust preventive include a triazole derivative and a tetrazole derivative.
Examples of the rust preventive include 5-aminotetrazole (for example, 5-amino-1H-tetrazole), benzotriazole, 1-hydroxybenzotriazole, 1H-benzotriazole-1-acetoform, benzotriazole-5-carboxylic acid, and 1H-benzo. Examples thereof include triazole-1-methanol, carboxybenzotriazole, and mercaptobenzotriazole. Among these, 5-aminotetrazole, benzotriazole or 1-hydroxybenzotriazole is preferable.
The rust preventive may be used alone or in combination of two or more.
防錆剤を用いる場合、防錆剤の含有量は、(A)成分100質量部に対して0.01〜10質量部が好ましく、0.1〜5質量部がより好ましく、0.5〜3質量部がさらに好ましい。 When a rust inhibitor is used, the content of the rust inhibitor is preferably 0.01 to 10 parts by mass, more preferably 0.1 to 5 parts by mass, and 0.5 to 5 parts by mass with respect to 100 parts by mass of the component (A). 3 parts by mass is more preferable.
(B)成分以外の架橋剤を含むことで、感光特性、硬化物特性等を柔軟に調整でき、特に硬化物特性を大きく変動させることができる。 By including a cross-linking agent other than the component (B), the photosensitive characteristics, the cured product characteristics, and the like can be flexibly adjusted, and in particular, the cured product characteristics can be greatly changed.
(B)成分以外の架橋剤としては、例えば、ジエチレングリコールジアクリレート、トリエチレングリコールジアクリレート、テトラエチレングリコールジアクリレート、ジエチレングリコールジメタクリレート、トリエチレングリコールジメタクリレート、テトラエチレングリコールジメタクリレート、1,4−ブタンジオールジアクリレート、1,6−ヘキサンジオールジアクリレート、1,4−ブタンジオールジメタクリレート、1,6−ヘキサンジオールジメタクリレート、トリメチロールプロパンジアクリレート、トリメチロールプロパントリアクリレート、トリメチロールプロパンジメタクリレート、トリメチロールプロパントリメタクリレート、ペンタエリスリトールトリアクリレート、ペンタエリスリトールテトラアクリレート、ペンタエリスリトールトリメタクリレート、ペンタエリスリトールテトラメタクリレート、
テトラメチロールメタンテトラアクリレート、テトラメチロールメタンテトラメタクリレート、ジペンタエリスリトールヘキサアクリレート、ジペンタエリスリトールヘキサメタクリレート、エトキシ化ペンタエリスリトールテトラアクリレート、エトキシ化イソシアヌル酸トリアクリレート、エトキシ化イソシアヌル酸トリメタクリレート、アクリロイルオキシエチルイソシアヌレート、メタクリロイルオキシエチルイソシアヌレート等が挙げられる。Examples of the cross-linking agent other than the component (B) include diethylene glycol diacrylate, triethylene glycol diacrylate, tetraethylene glycol diacrylate, diethylene glycol dimethacrylate, triethylene glycol dimethacrylate, tetraethylene glycol dimethacrylate, and 1,4-butane. Didiol diacrylate, 1,6-hexanediol diacrylate, 1,4-butanediol dimethacrylate, 1,6-hexanediol dimethacrylate, trimethylolpropane diacrylate, trimethylolpropane triacrylate, trimethylolpropane dimethacrylate, tri Methylolpropane trimethacrylate, pentaerythritol triacrylate, pentaerythritol tetraacrylate, pentaerythritol trimethacrylate, pentaerythritol tetramethacrylate,
Tetramethylolmethane Tetraacrylate, Tetramethylolmethane Tetramethacrylate, Dipentaerythritol Hexaacrylate, Dipentaerythritol Hexamethacrylate, Pentaerythritol Tetraacrylate, Triacrylate ethoxylated isocyanuric acid, Trimethacrylate ethoxylated isocyanuric acid, Acryloyloxyethyl isocyanurate , Methacryloyloxyethyl isocyanurate and the like.
(B)成分以外の架橋剤は、1種単独で用いてもよく、2種以上を組み合わせてもよい。 The cross-linking agent other than the component (B) may be used alone or in combination of two or more.
(B)成分以外の架橋剤を含む場合、(B)成分以外の架橋剤の含有量は、(A)成分100質量部に対して0.01〜20質量部が好ましく、0.05〜15質量部がより好ましく、1〜12質量部がさらに好ましい。 When a cross-linking agent other than the component (B) is contained, the content of the cross-linking agent other than the component (B) is preferably 0.01 to 20 parts by mass, and 0.05 to 15 parts by mass with respect to 100 parts by mass of the component (A). Parts by mass are more preferable, and parts by mass of 1 to 12 are even more preferable.
増感剤としては、ミヒラーズケトン、ベンゾイン、2−メチルベンゾイン、ベンゾインメチルエーテル、ベンゾインエチルエーテル、ベンゾインイソプロピルエーテル、ベンゾインブチルエーテル、2−t−ブチルアントラキノン、1,2−ベンゾ−9,10−アントラキノン、アントラキノン、メチルアントラキノン、4,4′−ビス−(ジエチルアミノ)ベンゾフェノン、アセトフェノン、ベンゾフェノン、チオキサントン、1,5−アセナフテン、2,2−ジメトキシ−2−フェニルアセトフェノン、1−ヒドロキシシクロヘキシルフェニルケトン、2−メチル−[4−(メチルチオ)フェニル]−2−モルフォリノ−1−プロパノン、ジアセチルベンジル、ベンジルジメチルケタール、ベンジルジエチルケタール、ジフェニルジスルフィド、アントラセン、フェナンスレンキノン、リボフラビンテトラブチレート、アクリジンオレンジ、エリスロシン、フェナンスレンキノン、2−イソプロピルチオキサントン、2,6−ビス(p−ジエチルアミノベンジリデン)−4−メチル−4−アザシクロヘキサノン、6−ビス(p−ジメチルアミノベンジリデン)−シクロペンタノン、2,6−ビス(p−ジエチルアミノベンジリデン)−4−フェニルシクロヘキサノン、アミノスチリルケトン、3−ケトクマリン化合物、ビスクマリン化合物、N−フェニルグリシン、N−フェニルジエタノールアミン、及び3,3′,4,4′−テトラ(t−ブチルパーオキシカルボニル)ベンゾフェノン、下記式で表される化合物等が挙げられる。
増感剤は、1種を単独で用いても、2種以上を併用してもよい。 As the sensitizer, one type may be used alone, or two or more types may be used in combination.
増感剤を含有する場合、増感剤の配合量は、(A)成分100質量部に対して、0.1〜1.5質量部が好ましく、0.2〜1.2質量部がより好ましい。 When a sensitizer is contained, the blending amount of the sensitizer is preferably 0.1 to 1.5 parts by mass, more preferably 0.2 to 1.2 parts by mass with respect to 100 parts by mass of the component (A). preferable.
重合禁止剤を含有することで、良好な保存安定性を確保することができる。
重合禁止剤としては、ラジカル重合禁止剤、ラジカル重合抑制剤等が挙げられる。By containing a polymerization inhibitor, good storage stability can be ensured.
Examples of the polymerization inhibitor include a radical polymerization inhibitor, a radical polymerization inhibitor and the like.
重合禁止剤としては、例えば、1,4,4−トリメチル−2,3−ジアザビシクロ[3.2.2]−ノナ−2−エン−2,3−ジキソイド、p−メトキシフェノール、ジフェニル−p−ベンゾキノン、ベンゾキノン、ハイドロキノン、ピロガロール、フェノチアジン、レゾルシノール、オルトジニトロベンゼン、パラジニトロベンゼン、メタジニトロベンゼン、フェナントラキノン、N−フェニル−2−ナフチルアミン、クペロン、2,5−トルキノン、タンニン酸、パラベンジルアミノフェノール、ニトロソアミン類等が挙げられる。 Examples of the polymerization inhibitor include 1,4,4-trimethyl-2,3-diazabicyclo [3.2.2] -none-2-ene-2,3-dixoid, p-methoxyphenol, and diphenyl-p-. Benzoquinone, benzoquinone, hydroquinone, pyrogallol, phenothiazine, resorcinol, orthodinitrobenzene, paradinitrobenzene, metadinitrobenzene, phenanthraquinone, N-phenyl-2-naphthylamine, cuperon, 2,5-torquinone, tannic acid, parabenzylaminophenol , Nitrosoamines and the like.
重合禁止剤は、1種単独で用いてもよく、2種以上を組み合わせてもよい。 The polymerization inhibitor may be used alone or in combination of two or more.
重合禁止剤を含有する場合、重合禁止剤の含有量としては、感光性樹脂組成物の保存安定性及び得られる硬化物の耐熱性の観点から、(A)成分100質量部に対して、0.01〜30質量部が好ましく、0.01〜10質量部がより好ましく、0.05〜5質量部がさらに好ましい。 When a polymerization inhibitor is contained, the content of the polymerization inhibitor is 0 with respect to 100 parts by mass of the component (A) from the viewpoint of storage stability of the photosensitive resin composition and heat resistance of the obtained cured product. It is preferably 0.01 to 30 parts by mass, more preferably 0.01 to 10 parts by mass, and even more preferably 0.05 to 5 parts by mass.
本発明の感光性樹脂組成物は、本質的に、(A)〜(E)成分、並びに任意に(F)成分、カップリング剤、界面活性剤、レベリング剤、防錆剤、(B)成分以外の架橋剤、増感剤及び重合禁止剤からなっており、本発明の効果を損なわない範囲で他に不可避不純物を含んでもよい。
本発明の感光性樹脂組成物の、例えば、80質量%以上、90質量%以上、95質量%以上、98質量%以上又は100質量%が、
(A)〜(E)成分、
(A)〜(F)成分、又は
(A)〜(E)成分、並びに任意に(F)成分、カップリング剤、界面活性剤、レベリング剤、防錆剤、(B)成分以外の架橋剤、増感剤及び重合禁止剤からなっていてもよい。The photosensitive resin composition of the present invention essentially contains components (A) to (E), and optionally components (F), a coupling agent, a surfactant, a leveling agent, a rust preventive, and a component (B). It is composed of a cross-linking agent, a sensitizer and a polymerization inhibitor other than the above, and may contain other unavoidable impurities as long as the effects of the present invention are not impaired.
For example, 80% by mass or more, 90% by mass or more, 95% by mass or more, 98% by mass or more, or 100% by mass of the photosensitive resin composition of the present invention.
Ingredients (A) to (E),
A cross-linking agent other than the components (A) to (F), or the components (A) to (E), and optionally the component (F), a coupling agent, a surfactant, a leveling agent, a rust preventive agent, and a component (B). , A sensitizer and a polymerization inhibitor.
本発明の硬化物は、上述の感光性樹脂組成物を硬化することで得ることができる。
本発明の硬化物は、パターン硬化物として用いてもよく、パターンがない硬化物として用いてもよい。
本発明の硬化物の膜厚は、5〜20μmが好ましい。The cured product of the present invention can be obtained by curing the above-mentioned photosensitive resin composition.
The cured product of the present invention may be used as a patterned cured product or as a cured product without a pattern.
The film thickness of the cured product of the present invention is preferably 5 to 20 μm.
本発明のパターン硬化物の製造方法では、上述の感光性樹脂組成物を基板上に塗布、乾燥して感光性樹脂膜を形成する工程と、感光性樹脂膜をパターン露光して、樹脂膜を得る工程と、パターン露光後の樹脂膜を、有機溶剤を用いて、現像し、パターン樹脂膜を得る工程と、パターン樹脂膜を加熱処理する工程と、を含む。
これにより、パターン硬化物を得ることができる。In the method for producing a cured pattern of the present invention, the above-mentioned photosensitive resin composition is applied onto a substrate and dried to form a photosensitive resin film, and the photosensitive resin film is pattern-exposed to form a resin film. It includes a step of obtaining, a step of developing the resin film after pattern exposure with an organic solvent to obtain a pattern resin film, and a step of heat-treating the pattern resin film.
Thereby, a pattern cured product can be obtained.
パターンがない硬化物を製造する方法は、例えば、上述の感光性樹脂膜を形成する工程と加熱処理する工程とを備える。さらに、露光する工程を備えてもよい。 A method for producing a cured product without a pattern includes, for example, a step of forming the above-mentioned photosensitive resin film and a step of heat treatment. Further, an exposure step may be provided.
基板としては、ガラス基板、Si基板(シリコンウエハ)等の半導体基板、TiO2基板、SiO2基板等の金属酸化物絶縁体基板、窒化ケイ素基板、銅基板、銅合金基板などが挙げられる。Examples of the substrate include a glass substrate, a semiconductor substrate such as a Si substrate (silicon wafer), a metal oxide insulator substrate such as a TiO 2 substrate and a SiO 2 substrate, a silicon nitride substrate, a copper substrate, and a copper alloy substrate.
塗布方法に特に制限はないが、スピナー等を用いて行うことができる。 The coating method is not particularly limited, but it can be applied using a spinner or the like.
乾燥は、ホットプレート、オーブン等を用いて行うことができる。
乾燥温度は90〜150℃が好ましく、溶解コントラスト確保の観点から、90〜120℃がより好ましい。
乾燥時間は、30秒間〜5分間が好ましい。
乾燥は、2回以上行ってもよい。
これにより、上述の感光性樹脂組成物を膜状に形成した感光性樹脂膜を得ることができる。Drying can be performed using a hot plate, an oven, or the like.
The drying temperature is preferably 90 to 150 ° C., and more preferably 90 to 120 ° C. from the viewpoint of ensuring the dissolution contrast.
The drying time is preferably 30 seconds to 5 minutes.
Drying may be performed twice or more.
As a result, a photosensitive resin film obtained by forming the above-mentioned photosensitive resin composition into a film can be obtained.
感光性樹脂膜の膜厚は、5〜100μmが好ましく、6〜50μmがより好ましく、7〜30μmがさらに好ましい。 The film thickness of the photosensitive resin film is preferably 5 to 100 μm, more preferably 6 to 50 μm, and even more preferably 7 to 30 μm.
パターン露光は、例えばフォトマスクを介して所定のパターンに露光する。
照射する活性光線は、i線、h線等の紫外線、可視光線、放射線などが挙げられるが、i線であることが好ましい。
露光装置としては、平行露光機、投影露光機、ステッパ、スキャナ露光機等を用いることができる。The pattern exposure exposes a predetermined pattern through, for example, a photomask.
Examples of the active light beam to be irradiated include ultraviolet rays such as i-ray and h-ray, visible light, and radiation, and i-ray is preferable.
As the exposure apparatus, a parallel exposure machine, a projection exposure machine, a stepper, a scanner exposure machine and the like can be used.
現像することで、パターン形成された樹脂膜(パターン樹脂膜)を得ることができる。一般的に、ネガ型感光性樹脂組成物を用いた場合には、未露光部を現像液で除去する。
現像液として用いる有機溶剤は、現像液としては、感光性樹脂膜の良溶媒を単独で、又は良溶媒と貧溶媒を適宜混合して用いることができる。
良溶媒としては、N−メチル−2−ピロリドン、N−アセチル−2−ピロリドン、N,N−ジメチルアセトアミド、N,N−ジメチルホルムアミド、ジメチルスルホキシド、γ−ブチロラクトン、α−アセチル−γ−ブチロラクトン、シクロペンタノン、シクロヘキサノン等が挙げられる。
貧溶媒としては、トルエン、キシレン、メタノール、エタノール、イソプロパノール、プロピレングリコールモノメチルエーテルアセテート、プロピレングリコールモノメチルエーテル及び水等が挙げられる。By developing, a patterned resin film (patterned resin film) can be obtained. Generally, when a negative photosensitive resin composition is used, the unexposed portion is removed with a developing solution.
As the developing solution, the organic solvent used as the developing solution may be a good solvent of the photosensitive resin film alone or a mixture of a good solvent and a poor solvent as appropriate.
Good solvents include N-methyl-2-pyrrolidone, N-acetyl-2-pyrrolidone, N, N-dimethylacetamide, N, N-dimethylformamide, dimethyl sulfoxide, γ-butyrolactone, α-acetyl-γ-butyrolactone, Cyclopentanone, cyclohexanone and the like can be mentioned.
Examples of the poor solvent include toluene, xylene, methanol, ethanol, isopropanol, propylene glycol monomethyl ether acetate, propylene glycol monomethyl ether and water.
現像液に界面活性剤を添加してもよい。添加量としては、現像液100質量部に対して、0.01〜10質量部が好ましく、0.1〜5質量部がより好ましい。 A surfactant may be added to the developer. The amount to be added is preferably 0.01 to 10 parts by mass, more preferably 0.1 to 5 parts by mass with respect to 100 parts by mass of the developing solution.
現像時間は、例えば感光性樹脂膜を浸漬して完全に溶解するまでの時間の2倍とすることができる。
現像時間は、用いる(A)成分によっても異なるが、10秒間〜15分間が好ましく、10秒間〜5分間より好ましく、生産性の観点からは、20秒間〜5分間がさらに好ましい。The developing time can be, for example, twice the time required to immerse the photosensitive resin film and completely dissolve it.
The developing time varies depending on the component (A) used, but is preferably 10 seconds to 15 minutes, more preferably 10 seconds to 5 minutes, and even more preferably 20 seconds to 5 minutes from the viewpoint of productivity.
現像後、リンス液により洗浄を行ってもよい。
リンス液としては、蒸留水、メタノール、エタノール、イソプロパノール、トルエン、キシレン、プロピレングリコールモノメチルエーテルアセテート、プロピレングリコールモノメチルエーテル等を単独又は適宜混合して用いてもよく、また段階的に組み合わせて用いてもよい。After development, it may be washed with a rinsing liquid.
As the rinsing liquid, distilled water, methanol, ethanol, isopropanol, toluene, xylene, propylene glycol monomethyl ether acetate, propylene glycol monomethyl ether and the like may be used alone or in an appropriate mixture, or may be used in a stepwise combination. good.
パターン樹脂膜を加熱処理することにより、パターン硬化物を得ることができる。
(A)成分のポリイミド前駆体が、加熱処理工程によって、脱水閉環反応を起こし、通常対応するポリイミドとなる。A cured pattern can be obtained by heat-treating the pattern resin film.
The polyimide precursor of the component (A) undergoes a dehydration ring closure reaction by a heat treatment step to become a normally corresponding polyimide.
加熱処理の温度は、250℃以下が好ましく、120〜250℃がより好ましく、200℃以下又は160〜200℃がさらに好ましい。
上記範囲内であることにより、基板やデバイスへのダメージを小さく抑えることができ、デバイスを歩留り良く生産することが可能となり、プロセスの省エネルギー化を実現することができる。The temperature of the heat treatment is preferably 250 ° C. or lower, more preferably 120 to 250 ° C., and even more preferably 200 ° C. or lower or 160 to 200 ° C.
Within the above range, damage to the substrate and the device can be suppressed to a small extent, the device can be produced with a high yield, and energy saving of the process can be realized.
加熱処理の時間は、5時間以下が好ましく、30分間〜3時間がより好ましい。
上記範囲内であることにより、架橋反応又は脱水閉環反応を充分に進行することができる。
加熱処理の雰囲気は大気中であっても、窒素等の不活性雰囲気中であってもよいが、パターン樹脂膜の酸化を防ぐことができる観点から、窒素雰囲気下が好ましい。The heat treatment time is preferably 5 hours or less, more preferably 30 minutes to 3 hours.
Within the above range, the cross-linking reaction or the dehydration ring closure reaction can be sufficiently proceeded.
The atmosphere of the heat treatment may be the atmosphere or an inert atmosphere such as nitrogen, but a nitrogen atmosphere is preferable from the viewpoint of preventing oxidation of the patterned resin film.
加熱処理に用いられる装置としては、石英チューブ炉、ホットプレート、ラピッドサーマルアニール、縦型拡散炉、赤外線硬化炉、電子線硬化炉、マイクロ波硬化炉等が挙げられる。 Examples of the apparatus used for the heat treatment include a quartz tube furnace, a hot plate, a rapid thermal annealing, a vertical diffusion furnace, an infrared curing furnace, an electron beam curing furnace, a microwave curing furnace and the like.
本発明の硬化物は、パッシベーション膜、バッファーコート膜、層間絶縁膜、カバーコート層又は表面保護膜等として用いることができる。
上記パッシベーション膜、バッファーコート膜、層間絶縁膜、カバーコート層及び表面保護膜等からなる群から選択される1以上を用いて、信頼性の高い、半導体装置、多層配線板、各種電子デバイス、積層デバイス(マルチダイファンアウトウエハレベルパッケージ等)等の電子部品などを製造することができる。The cured product of the present invention can be used as a passivation film, a buffer coat film, an interlayer insulating film, a cover coat layer, a surface protective film, or the like.
Highly reliable semiconductor devices, multilayer wiring boards, various electronic devices, and laminates using one or more selected from the group consisting of the passivation film, buffer coat film, interlayer insulating film, cover coat layer, surface protective film, and the like. It is possible to manufacture electronic parts such as devices (multi-die fan out wafer level package, etc.).
本発明の電子部品である半導体装置の製造工程の一例を、図面を参照して説明する。
図1は、本発明の一実施形態に係る電子部品である多層配線構造の半導体装置の製造工程図である。
図1において、回路素子を有するSi基板等の半導体基板1は、回路素子の所定部分を除いてシリコン酸化膜等の保護膜2などで被覆され、露出した回路素子上に第1導体層3が形成される。その後、前記半導体基板1上に層間絶縁膜4が形成される。An example of a manufacturing process of a semiconductor device which is an electronic component of the present invention will be described with reference to the drawings.
FIG. 1 is a manufacturing process diagram of a semiconductor device having a multi-layer wiring structure, which is an electronic component according to an embodiment of the present invention.
In FIG. 1, a semiconductor substrate 1 such as a Si substrate having a circuit element is covered with a protective film 2 such as a silicon oxide film except for a predetermined portion of the circuit element, and a first conductor layer 3 is formed on the exposed circuit element. It is formed. After that, the interlayer insulating film 4 is formed on the semiconductor substrate 1.
次に、塩化ゴム系、フェノールノボラック系等の感光性樹脂層5が、層間絶縁膜4上に形成され、公知の写真食刻技術によって所定部分の層間絶縁膜4が露出するように窓6Aが設けられる。
Next, a photosensitive resin layer 5 such as a rubber chloride type or a phenol novolac type is formed on the interlayer insulating film 4, and the
窓6Aが露出した層間絶縁膜4は、選択的にエッチングされ、窓6Bが設けられる。
次いで、窓6Bから露出した第1導体層3を腐食することなく、感光性樹脂層5のみを腐食するようなエッチング溶液を用いて感光性樹脂層5が完全に除去される。The interlayer insulating film 4 in which the
Next, the photosensitive resin layer 5 is completely removed by using an etching solution that corrodes only the photosensitive resin layer 5 without corroding the first conductor layer 3 exposed from the
さらに公知の写真食刻技術を用いて、第2導体層7を形成し、第1導体層3との電気的接続を行う。
3層以上の多層配線構造を形成する場合には、上述の工程を繰り返して行い、各層を形成することができる。Further, using a known photographic etching technique, the second conductor layer 7 is formed and electrically connected to the first conductor layer 3.
When forming a multi-layer wiring structure having three or more layers, the above steps can be repeated to form each layer.
次に、上述の感光性樹脂組成物を用いて、パターン露光により窓6Cを開口し、表面保護膜8を形成する。表面保護膜8は、第2導体層7を外部からの応力、α線等から保護するものであり、得られる半導体装置は信頼性に優れる。
尚、前記例において、層間絶縁膜を本発明の感光性樹脂組成物を用いて形成することも可能である。Next, using the above-mentioned photosensitive resin composition, the
In the above example, the interlayer insulating film can also be formed by using the photosensitive resin composition of the present invention.
以下、実施例及び比較例に基づき、本発明についてさらに具体的に説明する。尚、本発明は下記実施例に限定されるものではない。 Hereinafter, the present invention will be described in more detail based on Examples and Comparative Examples. The present invention is not limited to the following examples.
合成例1(A1の合成)
3,3’,4,4’‐ジフェニルエーテルテトラカルボン酸二無水物(ODPA)7.07gと2,2’−ジメチルビフェニル−4,4’−ジアミン(DMAP)4.12gとをN−メチル−2−ピロリドン(NMP)30gに溶解し、30℃で4時間、その後室温下で一晩撹拌し、ポリアミド酸を得た。そこに水冷下で無水トリフルオロ酢酸を9.45g加え、45℃で3時間撹拌し、メタクリル酸2−ヒドロキシエチル(HEMA)7.08gを加えた。この反応液を蒸留水に滴下し、沈殿物をろ別して集め、減圧乾燥することによってポリイミド前駆体A1を得た。
ゲルパーミエーションクロマトグラフ(GPC)法を用いて、標準ポリスチレン換算により、以下の条件で、数平均分子量を求めた。A1の数平均分子量は40,000であった。Synthesis Example 1 (Synthesis of A1)
7.07 g of 3,3', 4,4'-diphenyl ether tetracarboxylic acid dianhydride (ODPA) and 4.12 g of 2,2'-dimethylbiphenyl-4,4'-diamine (DMAP) N-methyl- It was dissolved in 30 g of 2-pyrrolidone (NMP) and stirred at 30 ° C. for 4 hours and then at room temperature overnight to obtain polyamic acid. To this, 9.45 g of trifluoroacetic anhydride was added under water cooling, the mixture was stirred at 45 ° C. for 3 hours, and 7.08 g of 2-hydroxyethyl methacrylate (HEMA) was added. This reaction solution was added dropwise to distilled water, the precipitate was collected by filtration, and dried under reduced pressure to obtain a polyimide precursor A1.
Using the gel permeation chromatography (GPC) method, the number average molecular weight was determined under the following conditions by standard polystyrene conversion. The number average molecular weight of A1 was 40,000.
0.5mgのA1に対して溶剤[テトラヒドロフラン(THF)/ジメチルホルムアミド(DMF)=1/1(容積比)]1mLの溶液を用いて測定した。 The measurement was carried out using a solution of 1 mL of a solvent [tetrahydrofuran (THF) / dimethylformamide (DMF) = 1/1 (volume ratio)] with respect to 0.5 mg of A1.
測定装置:検出器 株式会社日立製作所製L4000UV
ポンプ:株式会社日立製作所製L6000
株式会社島津製作所製C−R4A Chromatopac
測定条件:カラムGelpack GL−S300MDT−5×2本
溶離液:THF/DMF=1/1(容積比)
LiBr(0.03mol/L)、H3PO4(0.06mol/L)
流速:1.0mL/min、検出器:UV270nmMeasuring device: Detector L4000UV manufactured by Hitachi, Ltd.
Pump: L6000 manufactured by Hitachi, Ltd.
C-R4A Chromatopac manufactured by Shimadzu Corporation
Measurement conditions: Column Gelpack GL-S300MDT-5 x 2 Eluent: THF / DMF = 1/1 (volume ratio)
LiBr (0.03 mol / L), H 3 PO 4 (0.06 mol / L)
Flow rate: 1.0 mL / min, Detector: UV270 nm
また、A1のエステル化率(ODPAのカルボキシ基のHEMAとの反応率)を、以下の条件でNMR測定を行い、算出した。エステル化率は、ポリアミド酸の全カルボキシ基に対し80モル%であった(残り20モル%はカルボキシ基)。 Further, the esterification rate of A1 (reaction rate of the carboxy group of ODPA with HEMA) was calculated by performing NMR measurement under the following conditions. The esterification rate was 80 mol% with respect to the total carboxy groups of the polyamic acid (the remaining 20 mol% was a carboxy group).
測定機器:ブルカー・バイオスピン社製 AV400M
磁場強度:400MHz
基準物質:テトラメチルシラン(TMS)
溶媒:ジメチルスルホキシド(DMSO)Measuring equipment: AV400M manufactured by Bruker Biospin
Magnetic field strength: 400MHz
Reference substance: Tetramethylsilane (TMS)
Solvent: Dimethyl sulfoxide (DMSO)
実施例1〜9及び比較例1〜3
(感光性樹脂組成物の調製)
表1及び2に示した成分及び配合量にて、実施例1〜9及び比較例1〜3の感光性樹脂組成物を調製した。表1及び2の配合量は、100質量部のA1に対する、各成分の質量部である。Examples 1-9 and Comparative Examples 1-3
(Preparation of photosensitive resin composition)
The photosensitive resin compositions of Examples 1 to 9 and Comparative Examples 1 to 3 were prepared with the components and blending amounts shown in Tables 1 and 2. The blending amounts in Tables 1 and 2 are parts by mass of each component with respect to 100 parts by mass of A1.
用いた各成分は以下の通りである。(A)成分として、合成例1で得られたA1を用いた。 Each component used is as follows. As the component (A), A1 obtained in Synthesis Example 1 was used.
(B)成分:脂肪族環状骨格を有する重合性モノマー
B1:A−DCP(新中村化学工業株式会社製、トリシクロデカンジメタノールジアクリレート、下記式B1で表される化合物)
(C)成分:光重合開始剤
C1:IRUGCURE OXE 02(BASFジャパン株式会社製、エタノン,1−[9−エチル−6−(2−メチルベンゾイル)−9H−カルバゾール−3−イル]−,1−(O−アセチルオキシム))
C2:G−1820(PDO)(Lambson株式会社製、1−フェニル−1,2−プロパンジオン−2−(O−エトキシカルボニル)オキシム)(C) Ingredient: Photopolymerization Initiator C1: IRUGCURE OXE 02 (manufactured by BASF Japan Ltd., Etanone, 1- [9-ethyl-6- (2-methylbenzoyl) -9H-carbazole-3-yl]-, 1 -(O-acetyloxime))
C2: G-1820 (PDO) (1-phenyl-1,2-propanedione-2- (O-ethoxycarbonyl) oxime, manufactured by Rambson Co., Ltd.)
(D)成分
D1:9,10ジブトキシアントラセン(川崎化成工業株式会社製)(D) Ingredient D1: 9,10 Dibutoxyanthracene (manufactured by Kawasaki Kasei Chemicals Co., Ltd.)
(E)成分:溶剤
E1:N−メチル−2−ピロリドン
E2:KJCMPA−100(KJケミカルズ株式会社製、下記式E2で表される化合物)
(F)成分:熱重合開始剤
F1:パークミルD(日油株式会社製、ビス(1−フェニル−1−メチルエチル)ペルオキシド、下記式で表される化合物)
(B)成分以外の架橋剤
ATM−4E:エトキシ化ペンタエリスリトールテトラアクリレート(新中村化学工業株式会社製、下記式で表される化合物(n11+n12+n13+n14は4である))
増感剤
BCIM:2,2´−ビス(2−クロロフェニル)−4,4´,5,5´−テトラフェニルビイミダゾール(Hampford Research社製、下記式で表される化合物)
ロイコ色素 LCV:ロイコクリスタルバイオレット(山田化学工業株式会社製、下記式で表される化合物)
EMK:4,4’−ビス(ジエチルアミノ)ベンゾフェノン EMK: 4,4'-bis (diethylamino) benzophenone
重合禁止剤
Taobn:1,4,4−トリメチル−2,3−ジアザビシクロ[3.2.2]−ノナ−2−エン−2,3−ジキソイド(Hampford Research社製)Polymerization inhibitor Taobn: 1,4,4-trimethyl-2,3-diazabicyclo [3.2.2] -Nona-2-en-2,3-dixoid (manufactured by Hampford Research)
防錆剤
5Atz:5−アミノ−1H−テトラゾール(東京化成工業株式会社製)Rust inhibitor 5Atz: 5-amino-1H-tetrazole (manufactured by Tokyo Chemical Industry Co., Ltd.)
接着助剤
UCT−801:3−ウレイドプロピルトリエトキシシラン(United Chemical Technologies社製)Adhesive aid UCT-801: 3-Ureidopropyltriethoxysilane (manufactured by United Chemical Technologies)
(現像後の残膜率の測定1)
得られた感光性樹脂組成物を、塗布装置Act8(東京エレクトロン株式会社製)を用いて、シリコンウエハ上にスピンコートし、100℃で2分間乾燥後、110℃で2分間乾燥して乾燥膜厚が7〜15μmの感光性樹脂膜を形成した。
得られた感光性樹脂膜をシクロペンタノンに浸漬して完全に溶解するまでの時間の2倍を現像時間として設定した。
また、上記と同様に感光性樹脂膜を作製し、得られた感光性樹脂膜に、i線ステッパFPA−3000iW(キヤノン株式会社製)を用いて、200mJ/cm2のi線を照射して、露光を行った。
露光後の樹脂膜を、Act8を用いて、シクロペンタノンに、上記の現像時間でパドル現像した後、プロピレングリコールモノメチルエーテルアセテート(PGMEA)でリンス洗浄を行い、樹脂膜を得た。
110℃のホットプレート上で2分間加熱後の膜厚及び現像後の膜厚について、膜の一部分をけがくことでシリコンウエハを露出させ、露出したシリコンウエハ表面から膜表面までの高さを、接針式プロファイラーDektak150(ブルカー社製)を用いて、測定した(膜厚の測定は以下同様である)。
現像後の膜厚10μmを、110℃のホットプレート上で2分間加熱後の膜厚で割った後、百分率にし、現像後の残膜率を求めた。現像後の残膜率が55〜100%の場合をA、40%以上55%未満の場合をB、0%以上40%未満の場合をCとした。結果を表1及び2に示す。(Measurement of residual film ratio after development 1)
The obtained photosensitive resin composition was spin-coated on a silicon wafer using a coating device Act8 (manufactured by Tokyo Electron Limited), dried at 100 ° C. for 2 minutes, and then dried at 110 ° C. for 2 minutes to form a dry film. A photosensitive resin film having a thickness of 7 to 15 μm was formed.
The development time was set to twice the time required for the obtained photosensitive resin film to be immersed in cyclopentanone and completely dissolved.
Further, a photosensitive resin film was prepared in the same manner as described above, and the obtained photosensitive resin film was irradiated with i-rays of 200 mJ / cm 2 using an i-line stepper FPA-3000iW (manufactured by Canon Inc.). , Exposure was performed.
The exposed resin film was paddle-developed with cyclopentanone using Act8 for the above-mentioned development time, and then rinse-washed with propylene glycol monomethyl ether acetate (PGMEA) to obtain a resin film.
Regarding the film thickness after heating for 2 minutes on a hot plate at 110 ° C. and the film thickness after development, the silicon wafer is exposed by scratching a part of the film, and the height from the exposed silicon wafer surface to the film surface is determined. The measurement was performed using a needle-contact type profiler Dektak 150 (manufactured by Bruker) (the film thickness is measured in the same manner below).
The film thickness of 10 μm after development was divided by the film thickness after heating for 2 minutes on a hot plate at 110 ° C., and then made into a percentage to determine the residual film ratio after development. The case where the residual film ratio after development was 55 to 100% was designated as A, the case where it was 40% or more and less than 55% was designated as B, and the case where it was 0% or more and less than 40% was designated as C. The results are shown in Tables 1 and 2.
(硬化物の製造1)
実施例1〜9について、現像後の残膜率の測定1で得られた樹脂膜を、縦型拡散炉μ−TF(光洋サーモシステム株式会社製)を用いて、窒素雰囲気下、175℃で1時間加熱し、硬化物(硬化後膜厚7〜10μm)を得た。
実施例1〜9について、良好な硬化物が得られた。(Manufacturing of cured product 1)
In Examples 1 to 9, the resin film obtained in the measurement 1 of the residual film ratio after development was subjected to a vertical diffusion furnace μ-TF (manufactured by Koyo Thermo System Co., Ltd.) at 175 ° C. in a nitrogen atmosphere. The mixture was heated for 1 hour to obtain a cured product (thickness 7 to 10 μm after curing).
Good cured products were obtained for Examples 1-9.
(現像後の残膜率の測定2)
上述の感光性樹脂組成物を、塗布装置Act8を用いて、シリコンウエハ上にスピンコートし、100℃で2分間乾燥後、110℃で2分間乾燥して乾燥膜厚が7〜15μmの感光性樹脂膜を形成した。
得られた感光性樹脂膜をシクロペンタノンに浸漬して完全に溶解するまでの時間の2倍を現像時間として設定した。
また、上記と同様に感光性樹脂膜を作製し、得られた感光性樹脂膜に、マスクアライナMA−8(ズース・マイクロテック社製)にh線バンドパスフィルタを使用して、200mJ/cm2のh線を照射して、露光を行った。
露光後の樹脂膜を、Act8を用いて、シクロペンタノンに、上記の現像時間でパドル現像した後、PGMEAでリンス洗浄を行い、樹脂膜を得た。
110℃のホットプレート上で2分間加熱後の膜厚及び現像後の膜厚について、現像後の残膜率の測定1と同様に測定した。
現像後の膜厚10μmを、110℃のホットプレート上で2分間加熱後の膜厚で割った後、百分率にし、現像後の残膜率を求めた。現像後の残膜率が55〜100%の場合をA、40%以上55%未満の場合をB、0%以上40%未満の場合をCとした。結果を表1及び2に示す。(Measurement of residual film ratio after development 2)
The above-mentioned photosensitive resin composition is spin-coated on a silicon wafer using a coating device Act8, dried at 100 ° C. for 2 minutes, and then dried at 110 ° C. for 2 minutes to have a dry film thickness of 7 to 15 μm. A resin film was formed.
The development time was set to twice the time required for the obtained photosensitive resin film to be immersed in cyclopentanone and completely dissolved.
Further, a photosensitive resin film was prepared in the same manner as described above, and the obtained photosensitive resin film was 200 mJ / cm using a mask aligner MA-8 (manufactured by Susu Microtech) and an h-line bandpass filter. The exposure was performed by irradiating the h line of No. 2.
The exposed resin film was paddle-developed with cyclopentanone using Act8 for the above-mentioned development time, and then rinse-washed with PGMEA to obtain a resin film.
The film thickness after heating for 2 minutes on a hot plate at 110 ° C. and the film thickness after development were measured in the same manner as in Measurement 1 of the residual film ratio after development.
The film thickness of 10 μm after development was divided by the film thickness after heating for 2 minutes on a hot plate at 110 ° C., and then made into a percentage to determine the residual film ratio after development. The case where the residual film ratio after development was 55 to 100% was designated as A, the case where it was 40% or more and less than 55% was designated as B, and the case where it was 0% or more and less than 40% was designated as C. The results are shown in Tables 1 and 2.
(硬化物の製造2)
実施例1〜9について、現像後の残膜率の測定2で得られた樹脂膜を、縦型拡散炉μ−TFを用いて、窒素雰囲気下、175℃で1時間加熱し、硬化物(硬化後膜厚7〜10μm)を得た。
実施例1〜9について、良好な硬化物が得られた。(Manufacturing of cured product 2)
In Examples 1 to 9, the resin film obtained in the measurement 2 of the residual film thickness after development was heated in a nitrogen atmosphere at 175 ° C. for 1 hour using a vertical diffusion furnace μ-TF to obtain a cured product (a cured product (). After curing, a film thickness of 7 to 10 μm) was obtained.
Good cured products were obtained for Examples 1-9.
(パターニング評価)
上述の感光性樹脂組成物を、塗布装置Act8を用いて、シリコンウエハ上にスピンコートし、100℃で2分間乾燥後、110℃で2分間乾燥して乾燥膜厚が7〜15μmの感光性樹脂膜を形成した。
得られた感光性樹脂膜をシクロペンタノンに浸漬して完全に溶解するまでの時間の2倍を現像時間として設定した。
また、上記と同様に感光性樹脂膜を作製し、得られた感光性樹脂膜に、マスクアライナMA−8(ズース・マイクロテック社製)にh線バンドパスフィルタを使用して、500mJ/cm2のh線を、所定のパターン(10μmのライン アンド スペースパターン)に照射して、露光を行った。
露光後の樹脂膜を、Act8を用いて、シクロペンタノンに、上記の現像時間でパドル現像した後、PGMEAでリンス洗浄を行い、パターン樹脂膜を得た。
得られたパターン樹脂膜を光学顕微鏡で観察し、ラインパターンに剥がれがなかった場合をAとし、ラインパターンが1本でも剥がれた場合をBとし、パターニングできなかった場合をCとした。結果を表1及び2に示す。(Patterning evaluation)
The above-mentioned photosensitive resin composition is spin-coated on a silicon wafer using a coating device Act8, dried at 100 ° C. for 2 minutes, and then dried at 110 ° C. for 2 minutes to have a dry film thickness of 7 to 15 μm. A resin film was formed.
The development time was set to twice the time required for the obtained photosensitive resin film to be immersed in cyclopentanone and completely dissolved.
Further, a photosensitive resin film was prepared in the same manner as described above, and the obtained photosensitive resin film was used with a mask aligner MA-8 (manufactured by Susu Microtech) using an h-line bandpass filter at 500 mJ / cm. A predetermined pattern (10 μm line-and-space pattern) was irradiated with h-line No. 2 to perform exposure.
The exposed resin film was paddle-developed with cyclopentanone using Act8 for the above-mentioned development time, and then rinse-washed with PGMEA to obtain a patterned resin film.
The obtained pattern resin film was observed with an optical microscope, and the case where the line pattern was not peeled off was designated as A, the case where even one line pattern was peeled off was designated as B, and the case where patterning could not be performed was designated as C. The results are shown in Tables 1 and 2.
(パターン硬化物の製造)
得られたパターン樹脂膜を、縦型拡散炉μ−TFを用いて、窒素雰囲気下、175℃で1時間加熱し、パターン硬化物(硬化後膜厚10μm)を得た。
実施例1〜9について、良好な硬化物が得られた。(Manufacturing of cured pattern)
The obtained pattern resin film was heated at 175 ° C. for 1 hour in a nitrogen atmosphere using a vertical diffusion furnace μ-TF to obtain a pattern cured product (thickness after curing 10 μm).
Good cured products were obtained for Examples 1-9.
本発明の感光性樹脂組成物は、層間絶縁膜、カバーコート層又は表面保護膜等に用いることができ、本発明の層間絶縁膜、カバーコート層又は表面保護膜は、電子部品等に用いることができる。 The photosensitive resin composition of the present invention can be used for an interlayer insulating film, a cover coat layer, a surface protective film, etc., and the interlayer insulating film, a cover coat layer, a surface protective film, etc. of the present invention can be used for an electronic component or the like. Can be done.
上記に本発明の実施形態及び/又は実施例を幾つか詳細に説明したが、当業者は、本発明の新規な教示及び効果から実質的に離れることなく、これら例示である実施形態及び/又は実施例に多くの変更を加えることが容易である。従って、これらの多くの変更は本発明の範囲に含まれる。
この明細書に記載の文献、及び本願のパリ条約による優先権の基礎となる出願の内容を全て援用する。Although some embodiments and / or embodiments of the present invention have been described above in detail, those skilled in the art will be able to demonstrate these embodiments and / or embodiments without substantial departure from the novel teachings and effects of the present invention. It is easy to make many changes to the examples. Therefore, many of these modifications are within the scope of the invention.
All the documents described in this specification and the contents of the application on which the priority under the Paris Convention of the present application is based are incorporated.
Claims (17)
(B)脂肪族環状骨格を有する重合性モノマー、
(C)光重合開始剤、
(D)アントラセン構造を含む化合物、及び
(E)溶剤を含有する感光性樹脂組成物。(A) Polyimide precursor having a polymerizable unsaturated bond,
(B) Polymerizable monomer having an aliphatic cyclic skeleton,
(C) Photopolymerization initiator,
A photosensitive resin composition containing (D) a compound containing an anthracene structure and (E) a solvent.
前記感光性樹脂膜をパターン露光して、樹脂膜を得る工程と、
前記パターン露光後の樹脂膜を、有機溶剤を用いて、現像し、パターン樹脂膜を得る工程と、
前記パターン樹脂膜を加熱処理する工程と、を含むパターン硬化物の製造方法。A step of applying the photosensitive resin composition according to any one of claims 1 to 11 onto a substrate and drying it to form a photosensitive resin film.
A step of pattern-exposing the photosensitive resin film to obtain a resin film, and
A step of developing the resin film after the pattern exposure using an organic solvent to obtain a pattern resin film, and
A method for producing a cured pattern product, which comprises a step of heat-treating the pattern resin film.
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2018188035 | 2018-10-03 | ||
JP2018188035 | 2018-10-03 | ||
PCT/JP2019/037574 WO2020071204A1 (en) | 2018-10-03 | 2019-09-25 | Photosensitive resin composition, method for producing patterned cured product, cured product, interlayer insulating film, cover coat layer, surface protective film, and electronic component |
Publications (2)
Publication Number | Publication Date |
---|---|
JPWO2020071204A1 true JPWO2020071204A1 (en) | 2021-09-16 |
JP7355025B2 JP7355025B2 (en) | 2023-10-03 |
Family
ID=70055022
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2020550332A Active JP7355025B2 (en) | 2018-10-03 | 2019-09-25 | Photosensitive resin composition, method for producing patterned cured product, cured product, interlayer insulating film, cover coat layer, surface protective film, and electronic components |
Country Status (5)
Country | Link |
---|---|
JP (1) | JP7355025B2 (en) |
KR (1) | KR20210068431A (en) |
CN (1) | CN113168102A (en) |
TW (1) | TWI818094B (en) |
WO (1) | WO2020071204A1 (en) |
Families Citing this family (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP7540891B2 (en) * | 2020-01-30 | 2024-08-27 | 旭化成株式会社 | Negative-type photosensitive resin composition, and method for producing polyimide and cured relief pattern using the same |
JP7543691B2 (en) * | 2020-04-20 | 2024-09-03 | Hdマイクロシステムズ株式会社 | Photosensitive resin composition, method for producing patterned cured film, cured film, interlayer insulating film, cover coat layer, surface protective film, and electronic component |
TWI818883B (en) * | 2021-03-05 | 2023-10-11 | 日商旭化成股份有限公司 | Photosensitive resin laminate and manufacturing method thereof |
Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2014214186A (en) * | 2013-04-23 | 2014-11-17 | 三洋化成工業株式会社 | Active energy ray-curable resin composition |
JP2018084626A (en) * | 2016-11-22 | 2018-05-31 | 日立化成デュポンマイクロシステムズ株式会社 | Photosensitive resin composition, method for producing patterned cured film, cured film, interlayer insulation film, cover coat layer, surface protective film and electronic component |
Family Cites Families (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP4923656B2 (en) * | 2006-03-22 | 2012-04-25 | 日立化成デュポンマイクロシステムズ株式会社 | Negative photosensitive resin composition, pattern manufacturing method, and electronic component |
JP2008111470A (en) | 2006-10-30 | 2008-05-15 | Nissan Motor Co Ltd | Mode change-over shift control device for continuously variable transmission |
JP5169446B2 (en) | 2008-04-28 | 2013-03-27 | 日立化成デュポンマイクロシステムズ株式会社 | Photosensitive resin composition, polybenzoxazole film using the resin composition, method for producing patterned cured film, and electronic component |
JP5504735B2 (en) * | 2009-07-31 | 2014-05-28 | 日立化成デュポンマイクロシステムズ株式会社 | Positive photosensitive resin composition, pattern cured film manufacturing method, and electronic component |
JP5807568B2 (en) * | 2011-02-14 | 2015-11-10 | 住友化学株式会社 | Colored photosensitive resin composition and compound |
TWI652297B (en) * | 2013-11-15 | 2019-03-01 | 富士軟片股份有限公司 | Curable composition,method for manufacturing cured film,cured film,and display device |
KR102300782B1 (en) * | 2014-01-24 | 2021-09-13 | 도레이 카부시키가이샤 | Negative photosensitive resin composition, cured film obtained by curing same, method for producing cured film, optical device provided with cured film, and backside-illuminated cmos image sensor |
JP2016199662A (en) | 2015-04-09 | 2016-12-01 | 日立化成デュポンマイクロシステムズ株式会社 | Resin composition comprising polyimide precursor, method for producing cured film and patterned cured film using the same, and electronic component |
WO2018100640A1 (en) * | 2016-11-29 | 2018-06-07 | 日立化成株式会社 | Photosensitive resin composition, photosensitive element, method for producing substrate with resist pattern, and method for producing printed wiring board |
-
2019
- 2019-09-25 CN CN201980065325.9A patent/CN113168102A/en active Pending
- 2019-09-25 KR KR1020217009079A patent/KR20210068431A/en not_active Application Discontinuation
- 2019-09-25 WO PCT/JP2019/037574 patent/WO2020071204A1/en active Application Filing
- 2019-09-25 JP JP2020550332A patent/JP7355025B2/en active Active
- 2019-10-02 TW TW108135764A patent/TWI818094B/en active
Patent Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2014214186A (en) * | 2013-04-23 | 2014-11-17 | 三洋化成工業株式会社 | Active energy ray-curable resin composition |
JP2018084626A (en) * | 2016-11-22 | 2018-05-31 | 日立化成デュポンマイクロシステムズ株式会社 | Photosensitive resin composition, method for producing patterned cured film, cured film, interlayer insulation film, cover coat layer, surface protective film and electronic component |
Also Published As
Publication number | Publication date |
---|---|
KR20210068431A (en) | 2021-06-09 |
JP7355025B2 (en) | 2023-10-03 |
TW202024189A (en) | 2020-07-01 |
WO2020071204A1 (en) | 2020-04-09 |
TWI818094B (en) | 2023-10-11 |
CN113168102A (en) | 2021-07-23 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
KR102671323B1 (en) | Photosensitive resin composition, method for producing patterned cured film, cured film, interlayer insulating film, cover coat layer, surface protective film, and electronic components | |
JP2018084626A (en) | Photosensitive resin composition, method for producing patterned cured film, cured film, interlayer insulation film, cover coat layer, surface protective film and electronic component | |
JP7444215B2 (en) | Photosensitive resin composition, method for producing patterned cured product, cured product, interlayer insulating film, cover coat layer, surface protective film, and electronic components | |
JP7395817B2 (en) | Method for producing patterned cured film, photosensitive resin composition, cured film, interlayer insulating film, cover coat layer, surface protective film, and electronic components | |
JP7355025B2 (en) | Photosensitive resin composition, method for producing patterned cured product, cured product, interlayer insulating film, cover coat layer, surface protective film, and electronic components | |
JP7405088B2 (en) | Photosensitive resin composition, method for producing patterned cured product, cured product, interlayer insulating film, cover coat layer, surface protective film, and electronic components | |
TWI847987B (en) | Photosensitive resin composition, method for producing patterned cured product, cured product, interlayer insulating film, top coating, surface protective film and electronic component | |
JPWO2020071201A1 (en) | Photosensitive resin composition, manufacturing method of pattern cured product, cured product, interlayer insulating film, cover coat layer, surface protective film and electronic components | |
JP7243233B2 (en) | PHOTOSENSITIVE RESIN COMPOSITION, METHOD FOR MANUFACTURING PATTERN CURED PRODUCT, CURED PRODUCT, INTERLAYER INSULATING FILM, COVER COAT LAYER, SURFACE PROTECTIVE FILM AND ELECTRONIC COMPONENTS | |
JP7238316B2 (en) | PHOTOSENSITIVE RESIN COMPOSITION, METHOD FOR MANUFACTURING PATTERN CURED PRODUCT, CURED PRODUCT, INTERLAYER INSULATING FILM, COVER COAT LAYER, SURFACE PROTECTIVE FILM AND ELECTRONIC COMPONENTS | |
WO2018179330A1 (en) | Photosensitive resin composition, method for manufacturing pattern cured film, cured product, interlayer insulation film, cover coating layer, surface protective film, and electronic component | |
JP7009803B2 (en) | Photosensitive resin composition, manufacturing method of pattern cured product, cured product, interlayer insulating film, cover coat layer, surface protective film and electronic components | |
JP7035632B2 (en) | Photosensitive resin composition, manufacturing method of pattern cured film, cured film, interlayer insulating film, cover coat layer, surface protective film and electronic components | |
JP7225652B2 (en) | PHOTOSENSITIVE RESIN COMPOSITION, METHOD FOR MANUFACTURING PATTERN CURED PRODUCT, CURED PRODUCT, INTERLAYER INSULATING FILM, COVER COAT LAYER, SURFACE PROTECTIVE FILM AND ELECTRONIC COMPONENTS | |
JP7543691B2 (en) | Photosensitive resin composition, method for producing patterned cured film, cured film, interlayer insulating film, cover coat layer, surface protective film, and electronic component | |
JP2022110710A (en) | Photosensitive resin composition, method for producing cured pattern, cured product, interlayer insulation film, cover coat layer, surface protection film and electronic component |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
A621 | Written request for application examination |
Free format text: JAPANESE INTERMEDIATE CODE: A621 Effective date: 20220823 |
|
A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20230328 |
|
A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20230526 |
|
TRDD | Decision of grant or rejection written | ||
A01 | Written decision to grant a patent or to grant a registration (utility model) |
Free format text: JAPANESE INTERMEDIATE CODE: A01 Effective date: 20230822 |
|
A61 | First payment of annual fees (during grant procedure) |
Free format text: JAPANESE INTERMEDIATE CODE: A61 Effective date: 20230904 |
|
R150 | Certificate of patent or registration of utility model |
Ref document number: 7355025 Country of ref document: JP Free format text: JAPANESE INTERMEDIATE CODE: R150 |