JPWO2020004670A1 - 分極ツイストを示す誘電体材料、分極を制御可能な誘電体構造体、並びにこれを使用したキャパシタ及び圧電素子、並びにセラミックス、並びにこれを使用したキャパシタ及び圧電素子 - Google Patents

分極ツイストを示す誘電体材料、分極を制御可能な誘電体構造体、並びにこれを使用したキャパシタ及び圧電素子、並びにセラミックス、並びにこれを使用したキャパシタ及び圧電素子 Download PDF

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JPWO2020004670A1
JPWO2020004670A1 JP2020527710A JP2020527710A JPWO2020004670A1 JP WO2020004670 A1 JPWO2020004670 A1 JP WO2020004670A1 JP 2020527710 A JP2020527710 A JP 2020527710A JP 2020527710 A JP2020527710 A JP 2020527710A JP WO2020004670 A1 JPWO2020004670 A1 JP WO2020004670A1
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polarization
electric field
dielectric
site
dielectric material
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Japanese (ja)
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祐二 野口
祐二 野口
佑樹 北中
佑樹 北中
颯 野元
颯 野元
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University of Tokyo NUC
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University of Tokyo NUC
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    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01G—COMPOUNDS CONTAINING METALS NOT COVERED BY SUBCLASSES C01D OR C01F
    • C01G29/00—Compounds of bismuth
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/10—Inorganic compounds or compositions
    • C30B29/16—Oxides
    • C30B29/22—Complex oxides
    • C30B29/30—Niobates; Vanadates; Tantalates
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/10—Inorganic compounds or compositions
    • C30B29/16—Oxides
    • C30B29/22—Complex oxides
    • C30B29/32—Titanates; Germanates; Molybdates; Tungstates
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
    • H01G4/00—Fixed capacitors; Processes of their manufacture
    • H01G4/002—Details
    • H01G4/018—Dielectrics
    • H01G4/06—Solid dielectrics
    • H01G4/08—Inorganic dielectrics
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
    • H01G4/00—Fixed capacitors; Processes of their manufacture
    • H01G4/002—Details
    • H01G4/018—Dielectrics
    • H01G4/06—Solid dielectrics
    • H01G4/08—Inorganic dielectrics
    • H01G4/12—Ceramic dielectrics
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N30/00—Piezoelectric or electrostrictive devices
    • H10N30/01—Manufacture or treatment
    • H10N30/04—Treatments to modify a piezoelectric or electrostrictive property, e.g. polarisation characteristics, vibration characteristics or mode tuning
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N30/00—Piezoelectric or electrostrictive devices
    • H10N30/80—Constructional details
    • H10N30/85—Piezoelectric or electrostrictive active materials
    • H10N30/853—Ceramic compositions

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  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Inorganic Chemistry (AREA)
  • Power Engineering (AREA)
  • Organic Chemistry (AREA)
  • Manufacturing & Machinery (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Ceramic Engineering (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Compositions Of Oxide Ceramics (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Ceramic Capacitors (AREA)
  • Fixed Capacitors And Capacitor Manufacturing Machines (AREA)
JP2020527710A 2018-06-29 2019-07-01 分極ツイストを示す誘電体材料、分極を制御可能な誘電体構造体、並びにこれを使用したキャパシタ及び圧電素子、並びにセラミックス、並びにこれを使用したキャパシタ及び圧電素子 Pending JPWO2020004670A1 (ja)

Priority Applications (1)

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JP2023172990A JP2023181202A (ja) 2018-06-29 2023-10-04 セラミックス、並びにこれを使用したキャパシタ及び圧電素子

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JP2018124344 2018-06-29
JP2018124344 2018-06-29
PCT/JP2019/026162 WO2020004670A1 (fr) 2018-06-29 2019-07-01 Matériau diélectrique présentant une torsion de polarisation, structure diélectrique dans laquelle la polarisation peut être réglée et condensateur et élément piézoélectrique utilisant chacun celle-ci et céramique et condensateur et élément piézoélectrique utilisant chacun celle-ci

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JP2023172990A Division JP2023181202A (ja) 2018-06-29 2023-10-04 セラミックス、並びにこれを使用したキャパシタ及び圧電素子

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JPWO2020004670A1 true JPWO2020004670A1 (ja) 2021-08-05

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JP2020527710A Pending JPWO2020004670A1 (ja) 2018-06-29 2019-07-01 分極ツイストを示す誘電体材料、分極を制御可能な誘電体構造体、並びにこれを使用したキャパシタ及び圧電素子、並びにセラミックス、並びにこれを使用したキャパシタ及び圧電素子
JP2023172990A Pending JP2023181202A (ja) 2018-06-29 2023-10-04 セラミックス、並びにこれを使用したキャパシタ及び圧電素子

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Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2004508704A (ja) * 2000-08-29 2004-03-18 エプコス　アクチエンゲゼルシャフト 銀ニオブタンタル酸塩の誘電性セラミック層を備えたキャパシタ
JP2010225705A (ja) * 2009-03-20 2010-10-07 Nippon Soken Inc 積層型圧電素子及びその製造方法
JP2012099704A (ja) * 2010-11-04 2012-05-24 Seiko Epson Corp 液体噴射ヘッド、液体噴射装置、圧電素子、および圧電セラミックス
JP2013515353A (ja) * 2009-12-21 2013-05-02 エプコス アクチエンゲゼルシャフト 温度依存的なコンデンサ、およびコンデンサモジュール

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2004508704A (ja) * 2000-08-29 2004-03-18 エプコス　アクチエンゲゼルシャフト 銀ニオブタンタル酸塩の誘電性セラミック層を備えたキャパシタ
JP2010225705A (ja) * 2009-03-20 2010-10-07 Nippon Soken Inc 積層型圧電素子及びその製造方法
JP2013515353A (ja) * 2009-12-21 2013-05-02 エプコス アクチエンゲゼルシャフト 温度依存的なコンデンサ、およびコンデンサモジュール
JP2012099704A (ja) * 2010-11-04 2012-05-24 Seiko Epson Corp 液体噴射ヘッド、液体噴射装置、圧電素子、および圧電セラミックス

Non-Patent Citations (3)

* Cited by examiner, † Cited by third party
Title
KITANAKA YUUKI ET AL.: "Enhanced polarization properties of ferrielectric AgNbO3 single crystals grown by Czochralski method", JAPANESE JOURNAL OF APPLIED PHYSICS, vol. Vol.55, Article nunber:10TB03, JPN6022055180, 2016, pages 1 - 4, ISSN: 0004959461 *
KITANAKA YUUKI ET AL.: "Polarization twist in perovskite ferrielectrics", SCIENTIFIC REPORTS, vol. Vol.6, Article number:32216, JPN6022055179, 2016, pages 1 - 11, ISSN: 0004959460 *
XU QING ET AL.: "Effect of bismuth excess on ferroelectric and piezoelectric properties of a (Na0.5Bi0.5)TiO3-BaTiO3", JOURNAL OF ALLOYS AND COMPOUNDS, vol. 471, JPN6022055181, 2009, pages 310 - 316, XP025994419, ISSN: 0004959462, DOI: 10.1016/j.jallcom.2008.03.078 *

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JP2023181202A (ja) 2023-12-21

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