JPWO2019195441A5

JPWO2019195441A5 -

Info

Publication number: JPWO2019195441A5
Application number: JP2020554518A
Authority: JP
Publication date: 2022-04-12

Description

一実施形態によれば、層７からパターン化された導波路１１および導波路１１１は、シリコンにより形成され得、層８および層９からパターン化された導波路１１１１は、窒化シリコン（ＳｉＮ）により形成され得る。
なお、一実施形態において、フィールド感受性材料は、セリウムＹＩＧ、ビスマスをドープした希土類鉄ガーネット、ＬｉＮｂＯ３、ポリマー、および液晶からなる群から選択され得る。 According to one embodiment, the waveguides 11 and 111 patterned from layer 7 can be formed of silicon, and the waveguides 1111 patterned from layers 8 and 9 are made of silicon nitride (SiN). Can be formed.
In one embodiment, the field sensitive material can be selected from the group consisting of cerium YIG, bismuth-doped rare earth iron garnet, LiNbO3, polymers, and liquid crystal.

Claims

It ’s an optical system,
An integrated photonics structure comprising a field-generated conductive structure arranged within the dielectric stack of the integrated photonics structure having a waveguide arranged in the dielectric stack of the integrated photonics structure. ,
A photoelectric system comprising a heterologous structure attached to the integrated photonics structure, comprising a field-sensitive material that is sensitive to the field produced by the field-generated conductive structure.

The optoelectric system is configured such that the field generated by the field-generated conductive structure overlaps an area of the field-sensitive material occupied by a modal region of an optical signal transmitted by the waveguide. The optical electrical system according to claim 1.

The waveguide is defined by the silicon layer of the SOI wafer, and the field-generated conductive structure placed in the dielectric stack is placed at a lower height in the dielectric stack than the waveguide. The photoelectricity according to claim 1 or 2, wherein the minimum distance between the waveguide and the field-sensitive material is shorter than the minimum distance between the field-generated conductive structure and the field-sensitive material. system.

The optoelectric system is configured such that the field generated by the field-generated conductive structure overlaps the area of the field-sensitive material occupied by the modal region of the optical signal transmitted by the waveguide. The field-generated conductive structure is defined by the silicon layer of the SOI wafer and the field-generated conductive structure placed in the dielectric stack is placed at a lower height in the dielectric stack than the waveguide. One of claims 1 to 3, wherein the minimum distance between the waveguide and the field-sensitive material is shorter than the minimum distance between the field-generated conductive structure and the field-sensitive material. The opto-electric system according to paragraph 1.

The heterogeneous structure comprises a coupled waveguide layer disposed adjacent to the field sensitive material, the coupled waveguide layer couplings an optical signal transmitted by the waveguide into the field sensitive material. The optical electrical system according to any one of claims 1 to 4, which is configured as described above.

The optoelectric system is configured such that the optical signal transmitted by the waveguide arranged in the dielectric stack is coupled into the field sensitive material and the light coupled into the field sensitive material. The signal is transmitted by the field sensitive material and coupled into a second waveguide placed in the dielectric stack, the second waveguide, the field sensitive material, the waveguide, and the field-generated conductivity. The photoelectric system according to any one of claims 1 to 5, wherein the sex structure defines a field-sensitive device.

The photoelectric system according to any one of claims 1 to 6, wherein the field-generated conductive structure disposed in the dielectric stack is defined by one or more concentric rings.

The photoelectric system according to any one of claims 1 to 7, wherein the field sensitive material is magnetic field sensitive.

The photoelectric system according to any one of claims 1 to 8, wherein the field sensitive material is electric field sensitive.

The photoelectric system according to any one of claims 1 to 9, wherein the field-generated conductive structure and the field-sensitive material define an optical isolator.

The photoelectric system according to any one of claims 1 to 10, wherein the field-generated conductive structure and the field-sensitive material define a modulator.

From claim 1, wherein the field-generated conductive structure having the field-sensitive material defines a field-sensitive device selected from the group consisting of an isolator, a modulator, a circulator, a phase shifter, a polarized rotator, and a resonator. 11. The opto-electrical system according to any one of paragraphs 11.

The waveguide placed in the dielectric stack of the integrated photonics structure is located at a higher height than the field-generated conductive structure placed in the dielectric stack. Item 12. The opto-electric system according to any one of Items 1 to 12.

The integrated photonics structure is configured as one selected from the group consisting of (a) an integrated circuit chip having a front end and (b) an interposer, wherein the interposer provides a rewiring layer. The opto-electric system according to any one of claims 1 to 13, including the optical electric system according to any one of claims 1 to 13.

The integrated photonics structure comprises an interposer, the interposer comprising a rewiring layer, the optoelectric system comprising a strap connector for energizing the field-generated conductive structure, the strap. Silicon-penetrating vias that the connector electrically communicates with the rewiring layer, oxide-penetrating vias that extend through the height of the dielectric stack, and metallized layers that electrically communicate. The photoelectric system according to any one of claims 1 to 14, wherein the metallized layer has a height higher than the height of the metallized layer defining the field-generated conductive structure.

It ’s a method,
Manufacturing an integrated photonics structure, comprising manufacturing a waveguide in a dielectric stack, further comprising manufacturing a field-generated conductive structure in the dielectric stack, and manufacturing. ,
Attaching the heterogeneous structure to the integrated photonics structure, wherein the heterogeneous structure has a field-sensitive material that is sensitive to the field produced by the field-generated conductive structure. Including, method.

The method is performed such that the field generated by the field-generated conductive structure overlaps the area of the field-sensitive material occupied by the modal region of the optical signal transmitted by the waveguide. Item 16. The method according to Item 16.

Dielectric stack and
Waveguides arranged in the dielectric stack
With integrated photonics structures, including
A heterogeneous structure outside the integrated photonics structure, wherein the heterologous structure has a field-sensitive material with the heterologous structure.
An optical electrical system equipped with.

The optoelectronic system of claim 18, wherein the integrated photonics structure further comprises a field-generated conductive structure disposed within the dielectric stack.

19. The photoelectric system of claim 19, wherein the field sensitive material is field sensitive to the field produced by the field-generated conductive structure.

The opto-electrical system is configured such that the field generated by the field-generated conductive structure overlaps the area of the field-sensitive material occupied by the modal region of the optical signal transmitted by the waveguide. The optical electrical system according to claim 20.

The photoelectric system according to any one of claims 18 to 21, wherein the field-sensitive material is a field-sensitive material generated from within the dielectric stack.

The optoelectric system according to any one of claims 18 to 22, wherein the opto-electric system comprises a waveguide and a field-sensitive device defined by the field-sensitive material.

The optical electrical system according to any one of claims 18 to 23, wherein the area of the field sensitive material is occupied by a mode region of an optical signal transmitted by the waveguide.

13. Optical electrical system.

18. The area of the field sensitive material is occupied by a modal region of an optical signal transmitted by the waveguide and the optoelectric system comprises a field sensitive device defined by the waveguide and the field sensitive material. The optical electrical system described.

The opto-electrical system is configured such that a field generated from within the dielectric stack overlaps a mode region of an optical signal transmitted by the waveguide, and the opto-electrical system comprises the waveguide and the field. 18. The photoelectric system of claim 18, comprising a field sensitive device defined by a sensitive material.

The photoelectric system according to any one of claims 18 to 27, wherein the field-sensitive material is field-sensitive generated from below the top of the dielectric stack.

The opto-electric system according to any one of claims 18 to 28, wherein the opto-electric system is configured such that the optical signal transmitted by the waveguide is evanescently coupled within the field-sensitive material. ..

The light of any one of claims 18-29, wherein the photoelectric system comprises a field-generated structure integrally formed within the dielectric stack configured to communicate with the field sensitive material. Electrical system.

13. Optical electrical system.