JPWO2019188584A1 - Resistor - Google Patents

Abstract

An object of the present disclosure is to provide a resistor. The resistor (1) according to the present disclosure includes a base material (10), a resistor (11), and a protective film (12) laminated in this order.

Description

The present disclosure relates generally to resistors, and more specifically to resistors used in electronic devices.

Conventionally, a resistor may be mounted on an electronic device. Patent Document 1 and Patent Document 2 disclose an example of this resistor. The chip resistor disclosed in Patent Document 1 is connected to an alumina substrate, a flattening layer covering the entire surface of the alumina substrate, a resistor provided on the surface of the flattening layer, and both ends of the resistor. It includes a pair of surface electrodes and an insulating protective layer that covers the resistor. The thin film chip resistor disclosed in Patent Document 2 is formed between an insulating substrate, a thin film resistor formed on the substrate, a pair of electrodes connected to the thin film resistor, and at least between the pair of electrodes. A protective film that covers the thin film resistor is provided.

Japanese Unexamined Patent Publication No. 2017-168549 JP-A-2017-135234

An object of the present disclosure is to provide resistors used in electronic devices.

The resistor according to one aspect of the present disclosure includes a base material, a resistor, and a protective film laminated in this order.

FIG. 1A is a schematic plan view of a resistor according to a first example of the first embodiment of the present disclosure. FIG. 1B is a cross-sectional view taken along the line ZZ of the resistor shown in FIG. 1A. FIG. 2A is a schematic cross-sectional view showing how the heat generated by the resistor is released. FIG. 2B is a graph showing the rate of temperature decrease of the resistor with respect to the thickness of the base intermediate layer. FIG. 3A is a schematic cross-sectional view of the resistor according to the second example of the first embodiment of the present disclosure. FIG. 3B is a schematic cross-sectional view showing how the heat generated by the resistor is released. FIG. 4A is a schematic cross-sectional view of the resistor according to the third example of the first embodiment of the present disclosure. FIG. 4B is a schematic cross-sectional view showing how the heat generated by the resistor is released. FIG. 5A is a schematic plan view of the resistor according to the second embodiment of the present disclosure. FIG. 5B is a cross-sectional view taken along the line ZZ of the resistor shown in FIG. 5A. FIG. 6A is a schematic plan view showing a resistor when the trimming shape is a straight cut. FIG. 6B is a schematic plan view showing a resistor when the trimming shape is double cut. FIG. 6C is a schematic plan view showing a resistor when the trimming shape is L-cut. FIG. 6D is a schematic plan view showing a resistor when the trimming shape is U-cut. FIG. 7 is a schematic cross-sectional view showing the resistor of the first modification of the second embodiment of the present disclosure. FIG. 8A is a circuit diagram for measuring noise caused by the resistor. 8B and 8C are graphs showing noise with respect to the voltage applied to the resistor. 9A to 9E show the results of simulating the distribution of the power density of the resistor.

1. 1. Outline of the resistor of the present disclosure In the resistor 1 according to the first embodiment of the present disclosure, as shown in FIGS. 1A and 1B, a base material 10, a resistor 11, and a protective film 12 are laminated in this order. And prepare.

Further, as shown in FIGS. 5A and 5B, the resistor 1 according to the second embodiment of the present disclosure is also provided with the base material 10, the resistor 11, and the protective film 12 laminated in this order.

First, the base material 10, the resistor 11, and the protective film 12 which are common configurations of the resistor 1 according to the first embodiment and the resistor 1 according to the second embodiment will be described. The following first and second embodiments are examples of the configuration of the resistor 1, and the configuration of the resistor 1 is not limited to the first embodiment and the second embodiment. For example, the configuration of the resistor 1 according to the first embodiment and the configuration of the resistor 1 according to the second embodiment may be appropriately combined.

Further, in the following description, as shown in the drawings, the thickness direction of the resistor 1 is defined as the vertical direction, the longitudinal direction of the resistor 1 is defined as the horizontal direction, and the lateral direction of the resistor 1 is defined as the front-rear direction. Does not mean that the direction of use of the resistor 1 is specified. In addition, the arrows indicating "front", "rear", "left", "right", "top", and "bottom" in the drawing are shown only for explanation and are not accompanied by substance.

(About base material)
The base material 10 has a plate shape, and the shape of the base material 10 in a plan view (the shape when the resistor 1 is viewed from above) is a rectangular shape that is long in the left-right direction. Therefore, the resistor 1 is a so-called chip type resistor. In the present specification, the plan view means that the base material 10 and the resistor 11 are viewed from the overlapping direction.

The dimensions of the base material 10 in a plan view are not particularly limited because they are appropriately set according to the object on which the resistor 1 is mounted. The thickness of the base material 10 is preferably 0.1 mm or more and 0.6 mm or less, for example.

The material of the base material 10 is, for example, Al ₂ O ₃ (alumina). That is, the base material 10 is, for example, an alumina base material. The material of the base material 10 may contain components other than _{Al 2} O _3.

(About resistors)
The resistor 11 is on the base material 10. The resistor 11 is formed on the entire upper surface of the base material 10. The material of the resistor 11 will be described in detail below, but it is made of metal. The resistor 11 can be formed by, for example, a sputtering method.

(About protective film)
The protective film 12 is on the resistor 11. The protective film 12 covers the resistor 11. The protective film 12 can protect the resistor 11. The material of the protective film 12 will be described in detail below, but it is a cured product of the resin composition. The shape of the protective film 12 in a plan view is a rectangular shape that is long in the left-right direction, but any shape can be adopted according to the shape of the resistor 11.

2. About the first embodiment 2-1. Outline of the First Embodiment The chip resistor described in Patent Document 1 cannot sufficiently release the heat generated by the resistor when a voltage is applied. The advantage of the resistor 1 of the first embodiment is that it easily releases the heat generated by the resistor.

As described above, the resistor 1 according to the first embodiment includes the base material 10, the resistor 11, and the protective film 12 laminated in this order. The resistor 1 further includes at least one of the base intermediate layer 110 and the cover intermediate layer 111. The base intermediate layer 110 is an aluminum nitride layer that is interposed between the base material 10 and the resistor 11 and is in direct contact with the resistor 11. The cover intermediate layer 111 is an aluminum nitride layer that is interposed between the resistor 11 and the protective film 12 and is in direct contact with the resistor 11.

In the resistor 1 according to the first embodiment, at least one of the base intermediate layer 110 and the cover intermediate layer 111 is in direct contact with the resistor 11, and the base intermediate layer 110 and the cover intermediate layer 111 are aluminum nitride layers. Since aluminum nitride has excellent thermal conductivity, the heat generated by the resistor 11 is easily released to the aluminum nitride layer. Therefore, the resistor 1 tends to release the heat generated by the resistor 11.

2-2. Details of the first embodiment 2-2-1. First Example Hereinafter, the details of the resistor 1 according to the first example of the first embodiment will be described. The resistor 1 shown in FIGS. 1A and 1B includes a base material 10, a resistor 11, and a protective film 12. In the resistor 1, the base material 10, the resistor 11, and the protective film 12 are laminated in this order. The resistor 1 of the first example includes a base intermediate layer 110. The resistor 1 further includes an intermediate layer 120 and an electrode 13. Hereinafter, each configuration of the resistor 1 of the first example will be described in more detail.

(1) Base material In the resistor 1 of the first example, it is preferable that the base material 10 is made of alumina. When the base material 10 which is an alumina base material and the resistor 11 are in direct contact with each other, the heat generated by the resistor 11 is not easily released to the alumina base material. However, when the lower surface of the resistor 11 and the base intermediate layer 110 described later are in direct contact with each other, the heat generated by the resistor 11 can be released to the base intermediate layer 110.

(2) Resistor In the resistor 1 of the first example, the resistor 11 is formed on the entire upper surface of the base material 10. In this case, the heat generated by the resistor 11 can be released from the lower surface of the resistor 11 to the base intermediate layer 110. The first intermediate layer 110 will be described later.

The material of the resistor 11 of the first example is, for example, an alloy containing Ni and Cr (NiCr-based alloy). The resistor 11 can be formed, for example, by performing sputtering or the like on the base material 10.

(3) Electrode The resistor 11 of the first example includes an electrode 13. The electrode 13 is electrically connected to the resistor 11. The resistor 11 and the electrode 13 are electrically connected to each other by the direct contact between the resistor 11 and the electrode 13. The electrode 13 of the first example includes a top surface electrode 130, a top surface electrode 131, an end face electrode 132, a back surface electrode 133, an intermediate electrode 134, and an external electrode 136.

As shown in FIG. 1B, the top electrode 130 is located on the resistor 11. The top electrode 130 is in direct contact with the resistor 11. Further, the resistor 1 includes a pair of upper surface electrodes 130. The pair of top electrode 130s are formed at both ends of the resistor 11 in the left-right direction. The shape of the top surface electrode 130 in the first example in a plan view is rectangular, but may be circular, triangular, or any other shape.

The material of the top electrode 130 is, for example, a Ni-based alloy. Examples of this Ni-based alloy include a NiCu alloy. The top electrode 130 can be formed by, for example, a sputtering method. Specifically, after forming a CuNi alloy film on the entire upper surface of the resistor 11 by a sputtering method, an unnecessary portion of this film is removed by a method such as a photolithography method or an etching method to form a pair of upper surface electrodes. 130 can be formed.

The rear top electrode 131 is located on the top electrode 130. The re-top electrode 131 of the first example is in direct contact with the top electrode 130. Therefore, the re-top electrode 131 is electrically connected to the top electrode 130. Similar to the top electrode 130, the pair of re-top electrodes 131 are formed at both ends of the resistor 11 in the left-right direction.

The material of the top surface electrode 131 is, for example, a Ni-based alloy. Examples of this Ni-based alloy include a NiCu alloy. The top surface electrode 131 can be formed by, for example, a sputtering method. Specifically, a NiCu alloy film is formed on the resistor 11 and the top electrode 130 by a sputtering method, and unnecessary portions of the film are removed by a photolithography method, an etching method, or the like to form a pair of re-top electrodes. 131 can be formed.

The pair of end face electrodes 132 are formed on both end faces in the left-right direction of the base material 10, respectively. The end face electrode 132 of the first example is in direct contact with the top surface electrode 130 and the top surface electrode 131. Therefore, the end face electrode 132 is electrically connected to the top surface electrode 130 and the top surface electrode 131.

The end face electrode 132 is formed of, for example, an epoxy resin and a Cu-based alloy. Examples of this Cu-based alloy include CuNi alloys. Specifically, a film made of an epoxy resin and a Cu-based alloy is formed on both left and right end surfaces of the base material 10 on which the pair of top surface electrodes 130 and the pair of top surface electrodes 131 are formed, and then cured. , A pair of end face electrodes 132 can be formed.

The back surface electrode 133 is located on the lower surface of the base material 10. In the first example, the back surface electrode 133 is in direct contact with the bottom surface of the base material 10. Further, the resistor 1 includes a pair of back surface electrodes 133. The back surface electrode 133 is electrically connected to the end face electrode 132. Therefore, the back surface electrode 133 is electrically connected to the top surface electrode 130 and the re-top electrode 131 via the end surface electrode 132.

The material of the back surface electrode 133 is, for example, a Cu-based alloy. Examples of this Cu-based alloy include CuNi alloys. The back surface electrode 133 can be formed by, for example, a sputtering method. Specifically, a pair of backside electrodes is formed by forming a CuNi alloy film on the entire lower surface of the base material 10 by a sputtering method and removing the central portion of the film in the left-right direction by a photolithography method, an etching method, or the like. 133 can be formed.

The pair of intermediate electrodes 134 are formed at both ends of the base material 10 in the left-right direction. The intermediate electrode 134 covers the top surface electrode 131, the end surface electrode 132, and the back surface electrode 133. In the present embodiment, the intermediate electrode 134 is in direct contact with the top surface electrode 131, the end surface electrode 132, and the back surface electrode 133. Therefore, the intermediate electrode 134 is electrically connected to the upper surface electrode 130, the upper surface electrode 131, the end surface electrode 132, and the back surface electrode 133. The material of the intermediate electrode 134 is, for example, Ni. The intermediate electrode 134 may be formed, for example, by Ni plating.

The pair of external electrodes 136 are formed at both ends of the base material 10 in the left-right direction. The external electrode 136 covers the intermediate electrode 134. In this embodiment, the external electrode 136 is in direct contact with the intermediate electrode 134. Therefore, the external electrode 136 is electrically connected to the upper surface electrode 130, the upper surface electrode 131, the end surface electrode 132, and the back surface electrode 133 via the intermediate electrode 134. The material of the external electrode 136 is, for example, Sn. The external electrode 136 can be formed, for example, by Sn plating.

(4) Protective film The protective film 12 of the first example is a cured product of the resin composition as described above. The resin composition for forming the protective film 12 may contain a thermosetting resin or may contain an ultraviolet curable resin. Therefore, the protective film 12 can be formed by heating and curing the coating film of the resin composition, or by irradiating the coating film of the resin composition with ultraviolet rays and curing the coating film. In the first example, the shape of the protective film 12 in a plan view is a rectangular shape that is long in the left-right direction, but any shape can be adopted according to the shape of the resistor 11.

(5) Intermediate layer The intermediate layer 120 of the first example is interposed between the resistor 11 and the protective film 12. The intermediate layer 120 of the first example is in direct contact with the upper surface of the resistor 11 and is in direct contact with the lower surface of the protective film 12.

The intermediate layer 120 of the first example is preferably made of a metal oxide or a metal nitride. In this case, the resistor 11 is less likely to corrode. When the resistor 1 includes the intermediate layer 120, the resistor 1 can be applied to an in-vehicle application or the like in which the resistor 11 is exposed to an environment in which the resistor 11 is easily corroded.

(6) Base Intermediate Layer As described above, the base intermediate layer 110 is interposed between the base material 10 and the resistor 11 and is in direct contact with the lower surface of the resistor 11. The base intermediate layer 110 is an aluminum nitride layer. Since aluminum nitride has excellent thermal conductivity, as shown in FIG. 2A, the heat generated by the resistor 11 can be released to the base intermediate layer 110 which is in direct contact with the lower surface of the resistor 11. Therefore, the resistor 1 of the first example tends to release the heat generated by the resistor 11. Aluminum nitride constituting the base intermediate layer 110 is represented by the formula _Al X _{N Y.} X and Y in this equation are positive numbers.

In the first example, it is preferable that 1/2 or more of the base intermediate layer 110 is made of single crystal aluminum nitride. In this case, the base intermediate layer 110 can be easily thinned. It is more preferable that 4/5 or more of the base intermediate layer 110 is made of single crystal aluminum nitride, and it is particularly preferable that 9/10 or more of the base intermediate layer 110 is made of single crystal aluminum nitride. The proportion of single crystal aluminum nitride constituting the base intermediate layer 110 shall be measured by an X-ray diffraction method (XRD: X-ray diffraction), an X-ray rocking curve method (XRC: X-ray Rocking Curve), or the like. Can be done.

In the first example, the thickness of the base intermediate layer 110 is preferably 3 μm or more and 20 μm or less. In this case, the heat generated by the resistor 11 can be easily released to the base intermediate layer 110 while thinning the base intermediate layer 110. Further, the thickness of the base intermediate layer 110 is more preferably 5 μm or more and 10 μm or less. In this case, the heat generated by the resistor 11 is easily released by the base intermediate layer 110. FIG. 2B shows the rate of temperature decrease of the resistor 11 due to the heat generated by the resistor 11 being released to the base intermediate layer 110 when a current is passed through the resistor 1 shown in FIGS. 1A and 1B. The result calculated by the simulation is shown. The temperature drop rate of the resistor 11 is the temperature of the central portion of the resistor in a plan view when a current is passed through a resistor having the same configuration as that of the resistor 1 except that the base intermediate layer 110 is not provided. It was used as a standard. In FIG. 2B, the horizontal axis represents the thickness of the base intermediate layer 110, and the vertical axis represents the rate of temperature decrease. According to FIG. 2B, when the thickness of the base intermediate layer 110 is 3 μm or more and 20 μm or less, the temperature decrease rate is larger than when the thickness of the base intermediate layer 110 is less than 3 μm. That is, when the thickness of the base intermediate layer 110 is 3 μm or more and 20 μm or less, the heat generated by the resistor 11 is likely to be released to the base intermediate layer 110.

In the first example, it is preferable that the base intermediate layer 110 is a sputtered layer. That is, it is preferable that the base intermediate layer 110 is produced by a sputtering method. In this case, the base intermediate layer 110 is likely to be made of single crystal aluminum nitride. For example, the base intermediate layer 110 can be produced by forming an electrode film made of Ti and Mo on the base material 10 and then forming a piezoelectric film made of aluminum nitride on the electrode film.

In the first example, it is preferable that the base intermediate layer 110 is in direct contact with the electrode 13. In this case, the heat released from the resistor 11 to the base intermediate layer 110 is likely to be released from the base intermediate layer 110 to the electrode 13 (see FIG. 2A). In the first example, as shown in FIG. 1B, the base intermediate layer 110 is formed on the entire surface of the base material 10, so that the pair of end face electrodes 132 formed on both ends of the base material 10 in the left-right direction and the base are intermediate. It is in direct contact with layer 110. Therefore, heat can be released from the base intermediate layer 110 to the end face electrode 132. Further, when the resistor 1 is mounted on a circuit of an electronic device, since the electrode 13 and the circuit are connected by solder, the heat released from the base intermediate layer 110 to the electrode 13 can be released to the solder. ..

2-2-2. Second Example The resistor 1 according to the second example of the present embodiment is shown in FIG. 3A. The same configuration as that of the resistor 1 of the first example in the resistor 1 of the second example may be omitted by adding the same symbol.

The resistor 1 of the second example has a cover intermediate layer 111 made of an aluminum nitride layer interposed between the resistor 11 and the protective film 12, but has a base interposed between the resistor 11 and the protective film 12. It does not have an intermediate layer 110.

Specifically, in the resistor 1 of the second example, the upper surface of the resistor 11 and the cover intermediate layer 111 are in direct contact with each other, and the lower surface of the resistor 11 and the base material 10 are in direct contact with each other. Since aluminum nitride has excellent thermal conductivity, the heat generated by the resistor 11 can be released to the cover intermediate layer 111 which is in direct contact with the upper surface of the resistor 11 (see FIG. 3B).

Further, in the resistor 1 of the first example, the intermediate layer 120 is interposed between the resistor 11 and the protective film 12, but in the resistor 1 of the second example, the cover intermediate layer is replaced with the intermediate layer 120. It is equipped with 111. Therefore, the cover intermediate layer 111 can protect the resistor 11 and make it difficult for the resistor 11 to corrode. When the resistor 1 includes the cover intermediate layer 111, the resistor 1 can be applied to an in-vehicle application or the like in which the resistor 11 is exposed to an environment in which the resistor 11 is easily corroded.

The cover intermediate layer 111 can have the same configuration as the base intermediate layer 110 of the first example. Therefore, it is preferable that 1/2 or more of the cover intermediate layer 111 is made of single crystal aluminum nitride. Further, it is more preferable that 4/5 or more of the cover intermediate layer 111 is made of single crystal aluminum nitride, and it is particularly preferable that 9/10 or more of the cover intermediate layer 111 is made of single crystal aluminum nitride. In this case, the cover intermediate layer 111 can be easily thinned.

The thickness of the cover intermediate layer 111 is preferably 3 μm or more and 20 μm or less, and more preferably 5 μm or more and 10 μm or less, as in the base intermediate layer 110. In this case, the heat generated by the resistor 11 can be easily released to the cover intermediate layer 111, and the cover intermediate layer 111 can be thinned.

Further, the cover intermediate layer 111 is preferably a sputtered layer like the first intermediate layer 110. That is, it is preferable that the cover intermediate layer 111 is manufactured by a sputtering method. In this case, the cover intermediate layer 111 is likely to be made of single crystal aluminum nitride.

In the second example, it is preferable that the cover intermediate layer 111 is in direct contact with the electrode 13. In this case, the heat released from the resistor 11 to the cover intermediate layer 111 can be released from the cover intermediate layer 111 to the electrode 13 (see FIG. 3B). In the second example, since the cover intermediate layer 111 is continuously provided from the upper surface electrode 130 on the left side to the upper surface electrode 130 on the right side, the upper surface electrode 130 and the cover intermediate layer 111 are in direct contact with each other (FIG. See 3A). Therefore, heat can be released from the cover intermediate layer 111 to the upper surface electrode 130. Further, when the resistor 1 is mounted on a circuit of an electronic device, since the electrode 13 and the circuit are connected by solder, the heat released from the cover intermediate layer 111 to the electrode 13 can be released to the solder. ..

2-2-3. Third Example The resistor 1 of the third example is shown in FIG. 4A. Regarding the same configuration as the resistor 1 according to the first example in the resistor 1 of the third example, the description may be omitted by adding the same symbol.

In the third example of the resistor 1, the base intermediate layer 110 is interposed between the substrate 10 and the resistor 11, and the cover intermediate layer 111 is interposed between the resistor 11 and the protective film 12.

Specifically, the lower surface of the resistor 11 and the base intermediate layer 110 are in direct contact with each other, and the upper surface of the resistor 11 and the cover intermediate layer 111 are in direct contact with each other. That is, the resistor 11 is interposed between the base intermediate layer 110 and the cover intermediate layer 111. Since aluminum nitride has excellent thermal conductivity, the heat generated by the resistor 11 can be released to the base intermediate layer 110 and the cover intermediate layer 111 (see FIG. 4B).

Further, in the third example, the base intermediate layer 110 and the cover intermediate layer 111 are in direct contact with the electrode 13. Therefore, the heat generated by the resistor 11 and released to the base intermediate layer 110 and the heat generated by the resistor 11 and released to the cover intermediate layer 111 can be released to the electrode 13 (FIG. 4B). reference). When the resistor 1 is mounted in a circuit of an electronic device, since the electrode 13 and the circuit are connected by solder, the heat released from the base intermediate layer 110 to the electrode 13 and the cover intermediate layer 111 to the electrode 13 The released heat can be released to the solder.

The base intermediate layer 110 and the cover intermediate layer 111 of the third example have the same configuration as the base intermediate layer 110 included in the resistor 1 of the first example and the cover intermediate layer 111 included in the resistor 1 of the second example. Can be done.

2-3. Modifications of the First Embodiment The configuration of the resistor 1 of the first embodiment is not limited to the configurations of the first example, the second example, and the third example.

In the resistors 1 of the first example and the third example, the base material 10 and the base intermediate layer 110 are in direct contact with each other, but the present invention is not limited to this. For example, another layer may be interposed between the base material 10 and the base intermediate layer 110. The other layer may be made of resin or metal.

In the resistors 1 of the second example and the third example, the cover intermediate layer 111 and the protective film 12 are in direct contact with each other, but the present invention is not limited to this. For example, another layer may be interposed between the cover intermediate layer 111 and the protective film 12. The other layer may be made of resin or metal.

In the resistors 1 of the first example, the second example, and the third example, the base material 10 is made of alumina, but the present invention is not limited thereto. For example, the base material 10 may be made of resin, glass, ceramic, silicon, or aluminum nitride.

In the resistors 1 of the first example and the third example, the base intermediate layer 110 is a sputtering layer formed by a sputtering method, but the present invention is not limited thereto. For example, the base intermediate layer 110 may be a layer other than the sputtered layer. That is, the base intermediate layer 110 may be manufactured by a method other than the sputtering method. For example, the base intermediate layer 110 may be formed by attaching a thin film made of aluminum nitride to the upper surface of the base material 10.

In the resistors 1 of the second example and the third example, the cover intermediate layer 111 is a sputtering layer formed by a sputtering method, but the present invention is not limited to this. For example, the cover intermediate layer 111 may be a layer other than the sputter layer. That is, the cover intermediate layer 111 may be manufactured by a method other than the sputtering method. For example, the cover intermediate layer 111 may be formed by attaching a thin film made of aluminum nitride to the upper surface of the resistor 11.

3. 3. About the second embodiment 3-1. Outline of the Second Embodiment When the resistor described in Patent Document 2 is mounted on an analog circuit of an audio device, noise due to the resistor may be generated due to the flow of an analog signal through the resistor. It was. Due to this noise, the sound quality of the sound emitted from the output device such as a speaker or earphone connected to the audio device may be deteriorated. The advantage of the resistor 1 of the second embodiment is that noise is less likely to occur.

As shown in FIG. 5B, the resistor 1 according to the second embodiment includes a base material 10, a resistor 11 located on the base material 10, and a protective film 12 located on the resistor 11. The protective film 12 contains at least one of Ni, Co, Zn, and Ti.

In the resistor 1 according to the second embodiment, since the protective film 12 contains one or more of Ni, Co, Zn, and Ti, even if an analog signal flows through the resistor 1, it is caused by the resistor 1. Noise is less likely to occur. Therefore, by mounting the resistor 1 in the analog circuit provided in the audio device, the sound quality of the sound emitted from the output device such as the speaker and the earphone connected to the audio device is improved.

3-2. Details of the Second Embodiment Hereinafter, the details of the resistor 1 according to the second embodiment will be described. The resistor 1 shown in FIGS. 5A and 5B includes a base material 10, a resistor 11, and a protective film 12, and the base material 10, the resistor 11, and the protective film 12 are laminated in this order. The resistor 1 of the second embodiment further includes an electrode 13. Hereinafter, each configuration of the resistor 1 will be described in more detail.

(1) Base material The material of the base material 10 of the present embodiment is, for example, Al ₂ O ₃ (alumina), and the material of the base material 10 _{is preferably Al 2} O ₃ in an amount of, for example, 99% by weight or more.

(2) Resistor The resistor 11 of the present embodiment is partially trimmed. Therefore, the resistor 11 is formed on the entire upper surface of the base material 10 except for the trimmed portion. In this embodiment, the resistor 11 is in direct contact with the base material 10. The resistor 11 of this embodiment is in the form of a film.

The electric resistance value of the resistor 11 (hereinafter, also simply referred to as the resistance value) is determined by the thickness of the resistor 11, the material of the resistor 11, the trimming amount of the resistor 11, and the like.

In the present embodiment, the thickness of the resistor 11 is preferably 500 nm or more. In this case, it is possible to reduce the noise caused by the resistor 1.

The material of the resistor 11 is, for example, an alloy containing Ni, Cr and Al (NiCrAl alloy) when the resistance value of the resistor 11 is relatively small (for example, when the resistance value is 10Ω or more and less than 47Ω). When the resistance value of the resistor 11 is relatively large (for example, when the resistance value is 47Ω or more and less than 20kΩ), the material of the resistor 11 is, for example, an alloy containing Ni, Cr, Al and Si (NiCrAlSi alloy). Is. The resistor 11 can be formed by, for example, a sputtering method.

The trimming of the resistor 11 is performed by irradiating the resistor 11 with a laser such as a YAG laser to remove the irradiated portion. The amount of trimming of the resistor 11 will be described later.

(3) Electrodes The electrodes 13 include a pair of top surface electrodes 130, a pair of top surface electrodes 131, a pair of end face electrodes 132, a pair of back surface electrodes 133, a pair of first intermediate electrodes 134, a pair of second intermediate electrodes 135, and a pair of second intermediate electrodes 135. Includes a pair of external electrodes 136.

(I) Top electrode As shown in FIG. 5B, the top electrode 130 is located on the resistor 11. The top electrode 130 of this embodiment is in direct contact with the resistor 11. Further, the resistor 1 includes a pair of upper surface electrodes 130. The pair of top electrode 130s are formed at both ends of the resistor 11 in the left-right direction. As shown in FIG. 5B, the shape of the top surface electrode 130 in a plan view is rectangular, but may be circular, triangular, or any other shape.

The material of the top electrode 130 is, for example, a Cu-based alloy. Examples of this Cu-based alloy include CuNi alloys. The top electrode 130 can be formed by, for example, a sputtering method.

Specifically, after forming a CuNi alloy film on the entire upper surface of the resistor 11 by a sputtering method, an unnecessary portion of this film is removed by a method such as a photolithography method or an etching method to form a pair of upper surface electrodes. 130 can be formed.

(Ii) Re-top electrode As shown in FIG. 5B, the re-top electrode 131 is located on the top electrode 130. The re-top electrode 131 of the present embodiment is in direct contact with the top electrode 130. Therefore, the re-top electrode 131 is electrically connected to the top electrode 130. Similar to the top electrode 130, the pair of re-top electrodes 131 are formed at both ends of the resistor 11 in the left-right direction.

The material of the top surface electrode 131 is, for example, a Cu-based alloy or Cr. Examples of this Cu-based alloy include CuNi alloys. The top surface electrode 131 can be formed by, for example, a sputtering method.

Specifically, a CuNi alloy or Cr film is formed on the resistor 11 and the top electrode 130 by a sputtering method, and unnecessary portions of the film are removed by a photolithography method, an etching method, or the like to form a pair of re-layers. The top electrode 131 can be formed.

(Iii) End face electrode The resistor 1 of the present embodiment includes a pair of end face electrodes 132. The pair of end face electrodes 132 are formed on both end faces in the left-right direction of the base material 10 (see FIG. 5B). The end face electrode 132 of this embodiment is in direct contact with the top surface electrode 130 and the top surface electrode 131. Therefore, the end face electrode 132 is electrically connected to the top surface electrode 130 and the top surface electrode 131.

The material of the end face electrode 132 is, for example, a Cr or Cu-based alloy. Examples of this Cu-based alloy include CuNi alloys. The end face electrode 132 can be formed by, for example, a sputtering method.

Specifically, a Cr or CuNi alloy film is formed by a sputtering method on both left and right end surfaces of the base material 10 on which the pair of top surface electrodes 130 and the pair of top surface electrodes 131 are formed. A pair of end face electrodes 132 can be formed.

(Iv) Back electrode As shown in FIG. 5B, the back electrode 133 is located on the lower surface of the base material 10. In the present embodiment, the back surface electrode 133 is in direct contact with the lower surface of the base material 10. Further, the resistor 1 includes a pair of back surface electrodes 133. The back surface electrode 133 is electrically connected to the end face electrode 132. Therefore, the back surface electrode 133 is electrically connected to the top surface electrode 130 and the re-top electrode 131 via the end surface electrode 132.

The material of the back surface electrode 133 is, for example, a Cu-based alloy. Examples of this Cu-based alloy include CuNi alloys. The back surface electrode 133 can be formed by, for example, a sputtering method. Specifically, a pair of backside electrodes is formed by forming a CuNi alloy film on the entire lower surface of the base material 10 by a sputtering method and removing the central portion of the film in the left-right direction by a photolithography method, an etching method, or the like. 133 can be formed.

Further, the material of the back surface electrode 133 may be made of an epoxy resin containing Ag. In this case, the back electrode 133 can be formed by curing the coating film of the epoxy resin containing Ag.

(V) First Intermediate Electrode The resistor 1 of the present embodiment includes a pair of first intermediate electrodes 134. The pair of first intermediate electrodes 134 are formed at both ends of the base material 10 in the left-right direction (see FIG. 5B). The first intermediate electrode 134 covers the top surface electrode 131, the end surface electrode 132, and the back surface electrode 133. In the present embodiment, the first intermediate electrode 134 is in direct contact with the rear surface electrode 131, the end surface electrode 132, and the back surface electrode 133. Therefore, the first intermediate electrode 134 is electrically connected to the upper surface electrode 130, the upper surface electrode 131, the end surface electrode 132, and the back surface electrode 133. The material of the first intermediate electrode 134 is, for example, Cu. The first intermediate electrode 134 can be formed, for example, by Cu plating.

(Vi) Second Intermediate Electrode The resistor 1 of the present embodiment includes a pair of second intermediate electrodes 135. The pair of second intermediate electrodes 135 are formed at both ends of the base material 10 in the left-right direction (see FIG. 5B). The second intermediate electrode 135 covers the first intermediate electrode 134. In this embodiment, the second intermediate electrode 135 is in direct contact with the first intermediate electrode 134. Therefore, the second intermediate electrode 135 is electrically connected to the upper surface electrode 130, the re-upper surface electrode 131, the end surface electrode 132, and the back surface electrode 133 via the first intermediate electrode 134. The material of the second intermediate electrode 135 is, for example, Ni. The second intermediate electrode 135 can be formed, for example, by Ni plating.

(Vii) External Electrode The resistor 1 of the present embodiment includes a pair of external electrodes 136. The pair of external electrodes 136 are formed at both ends of the base material 10 in the left-right direction (see FIGS. 5A and 5B). The external electrode 136 covers the second intermediate electrode 135. In this embodiment, the external electrode 136 is in direct contact with the second intermediate electrode 135. Therefore, the external electrode 136 is electrically connected to the upper surface electrode 130, the re-upper surface electrode 131, the end surface electrode 132, and the back surface electrode 133 via the first intermediate electrode 134 and the second intermediate electrode 135. The material of the external electrode 136 is, for example, Sn. The external electrode 136 can be formed, for example, by Sn plating.

(4) Protective film In the present embodiment, the protective film 12 can protect the resistor 11 and suppress the oxidation of the resistor 11. In the present embodiment, a part of the top surface electrode 131, the first intermediate electrode 134, the second intermediate electrode 135, and the external electrode 136 are superposed on the protective film 12. Therefore, the protective film 12 of the present embodiment is formed after the upper surface electrode 130 is formed, and the re-top electrode 131 is formed after the protective film 12 is formed.

The protective film 12 of the present embodiment is a cured product of the resin composition. The resin composition for producing the protective film 12 contains a resin component, a solvent, an extender pigment, a low noise component, and the like.

The resin component may contain a thermosetting resin or may contain an ultraviolet curable resin. When the resin component contains a thermosetting resin, the protective film 12 can be formed by heating and curing the coating film of the resin composition. When the resin component contains an ultraviolet curable resin, the protective film 12 can be formed by irradiating the coating film of the resin composition with ultraviolet rays to cure it. Examples of the resin component include epoxy resin, phenol resin, bismaleimide resin, triazine resin and the like. The resin component can contain one or more of these resins. The resin component can contain, for example, an epoxy resin and a phenol resin. The resin component may also contain, for example, an epoxy resin, a bismaleimide resin, and a triazine resin. The ratio of the resin component to the total amount of the resin composition is preferably 30% by weight or more and 50% by weight or more, and more preferably 35% by weight or more and 45% by weight or less.

Examples of solvents include methanol, ethanol, isopropyl alcohol, methyl ethyl ketone, methyl isobutyl ketone, toluene, ethyl acetate, butyl acetate, cyclohexanone, xylene, diethylene glycol monoethyl ether acetate, diethylene glycol monomethyl ether, diethylene glycol monobutyl ether, and dipropylene glycol monomethyl ether. , 1- (2-methoxy-2-methylethoxy) -2-propanol, propylene glycol monomethyl ether acetate and the like. In the present embodiment, the ratio of the solvent to the total amount of the resin composition is preferably 15% by weight or more and 35% by weight or more, and preferably 20% by weight or more and 30% by weight or less.

Examples of extender pigments include silicon dioxide, calcium carbonate, barium sulfate and the like. The extender pigment can contain one or more of these components. The ratio of the extender pigment to the total amount of the resin composition is preferably 10% by weight or more and 25% or less.

Since the resin composition contains a low noise component, that is, the low noise component of the protective film 12 is contained, noise caused by the resistor 1 is less likely to occur. It is presumed that this is because the protective film 12 contains a low noise component, so that the electrical noise caused by the resistor 1 is reduced. The low noise component includes one or more of Ni, Co, Zn, and Ti. Therefore, the resin composition contains one or more of Ni, Co, Zn, and Ti, and the protective film 12 formed from the resin composition also contains one or more of Ni, Co, Zn, and Ti. .. In the present embodiment, it is preferable that the protective film 12 contains all of Ni, Co, Zn, and Ti. In this case, noise caused by the resistor 1 is particularly unlikely to occur. Therefore, it is preferable that the low noise component includes all of Ni, Co, Zn, and Ti.

The low noise component may contain one or more of metal Ni, metal Co, metal Zn, and metal Ti, and includes oxides of one or more components of Ni, Co, Zn, and Ti. It may be included, or both of these may be included. The low noise component may contain one or more of Ni oxide, Co oxide, and Zn oxide, and includes a composite oxide of two or more components of Ni, Co, Zn, and Ti. May be. In particular, the low noise component preferably contains a composite oxide containing all of Ni, Co, Zn, and Ti. In this case, noise caused by the resistor 1 is particularly unlikely to occur.

The ratio of the low noise component to the resin composition is preferably 15% by weight or more. That is, the total ratio of Ni, Co, Zn, and Ti to the resin composition is preferably 15% by weight or more. In this case, noise caused by the resistor 1 is less likely to occur. The ratio of the low noise component to the resin composition is preferably 27% by weight or less. In this case, the resin composition can be easily applied and the protective film 12 can be easily produced. When the low noise component contains one or more oxides of Ni, Co, Zn, and Ti, the ratio of the low noise component to the resin composition is the Ni element, Co element, and Zn element in the resin composition. , And the total content of Ti elements is calculated. When metallic Ni, metallic Co, etc. are contained as the low noise component, the ratio of metallic Ni to the resin composition is preferably 2.5% by weight or more and 4.5% by weight or less. The ratio of metal Co to the resin composition is preferably 0.5% by weight or more and 2.5% by weight or less. In this case, noise caused by the resistor 1 is less likely to occur.

The resin composition may contain components other than the resin component, the solvent, the extender pigment, and the low noise component. For example, the resin composition may contain additives and unavoidable impurities.

In the protective film 12 of the present embodiment, for example, the above-mentioned resin composition is applied to the entire upper surface of the resistor 11 and the upper surface electrode 130 and cured to form a film, and then an unnecessary portion of the film is photolithographically formed. , The protective film 12 can be formed by removing it by an etching method or the like. The protective film 12 in this case is in direct contact with the resistor 11. When the resistor 11 and the protective film 12 are in direct contact with each other, noise caused by the resistor 1 is particularly unlikely to occur. The thickness of the protective film 12 formed from the above-mentioned resin composition is preferably 650 μm or more, and more preferably 680 μm or more. The thickness of the protective film 12 is preferably 800 μm or less, more preferably 750 μm or less. In this case, it is possible to effectively reduce the noise caused by the resistor 1.

(5) Trimming of the resistor By removing a part of the resistor 11 (trimming), the resistance value of the resistor 11 can be adjusted. The trimming of the resistor 11 can be performed, for example, by irradiating the resistor 11 with a laser such as a YAG laser to remove the irradiated portion. In the present embodiment, the trimming of the resistor 11 is preferably performed along a direction orthogonal to the direction in which the pair of electrodes 13 (top electrode 130) are arranged.

The trimming of the resistor 11 may be performed at only one place or at a plurality of places. As shown in FIG. 5B, the resistor 11 of the present embodiment is trimmed at a plurality of places. As shown in FIG. 5B, the resistor 11 of the present embodiment is trimmed so as not to reach the rear end from the front end to the rear end, and is trimmed so as not to reach the front end from the rear end to the front end. ing. The trimming shape as shown in FIG. 5B is also referred to as a serpentine cut.

In the present embodiment, the trimming rate of the resistor 11 is preferably half or less. In this case, when a voltage is applied to the resistor 11, the proportion of the portion where the power density becomes high can be increased. When a voltage of 1 V is applied between the pair of electrodes 13, the resistor 11 has a power density of 1 × with respect to the area of the portion of the resistor 11 located between the pair of electrodes 13 in a plan view. The ratio of the area of the portion having 10 ⁶ pW / μm ² or more is preferably 30% or more. As a result, when the resistor 1 is mounted on the analog circuit provided in the audio device, the sound quality of the sound emitted from the output device such as the earphone or the speaker connected to the audio device is improved. It is presumed that this is because the thermal noise caused by the resistor 1 is reduced by reducing the trimming rate of the resistor 11 to half or less. The trimming rate of the resistor 11 in the present embodiment is orthogonal to the direction in which the pair of electrodes 13 of the trimmed portion are lined up with respect to the length in the direction perpendicular to the direction in which the pair of electrodes 13 of the resistor 11 are lined up. Shows the ratio of lengths in the direction. For example, when the trimming shape is serpentine cut as shown in FIG. 5B, the trimming ratio of the resistor 11 means the ratio of the length Y to the length X shown in FIG. 5B. Further, when a plurality of resistors 11 are trimmed with different lengths, the trimming rate can be defined based on the longest trimmed portion.

(6) Audio Equipment The resistor 1 of the present embodiment is mounted on an analog circuit of an audio equipment. The resistor 1 is mounted in, for example, an analog circuit of a digital to analog converter (DAC) included in an audio device. Examples of the analog circuit include a feedback circuit, a current control circuit, an amplifier circuit, and the like. For example, when the resistor 1 of the present embodiment is mounted on the analog circuit of the DAC, it can be mounted on the output end portion of the circuit that converts the digital signal input to the DAC into an analog signal and outputs the signal.

3-3. Modifications of the Second Embodiment The configuration of the resistor 1 of the second embodiment is not limited to the above-mentioned configuration.

In the resistor 1 of the second embodiment described above, the trimming shape of the resistor 11 is a serpentine cut as shown in FIG. 5B, but the trimming shape is not limited to this. For example, the trimming shape of the resistor 11 may be a straight cut as shown in FIG. 6A, a double cut as shown in FIG. 6B, an L cut as shown in FIG. 6C, or a L cut as shown in FIG. 6D. It may be U-cut.

In the resistor 1 of the second embodiment described above, the resistor 11 and the protective film 12 are in direct contact with each other, but the present invention is not limited to this. For example, as in the resistor 1 of the modified example 1 shown in FIG. 7, the resistor 11 and the protective film 12 do not come into direct contact with each other, but the resistor 11 and the protective film 12 come into indirect contact with each other via the intermediate layer 14. You may be. That is, the intermediate layer 14 may be interposed between the resistor 11 and the protective film 12. The intermediate layer 14 is, for example, an inorganic protective film made of a metal oxide alloy. The intermediate layer 14 can suppress the oxidation of the resistor 11.

In the resistor 1 of the second embodiment described above, the electrode 13 includes the re-top electrode 131, but the resistor 1 may not include the re-top electrode 131. That is, the upper surface electrode 130 and the first intermediate electrode 134 may be in direct contact with each other.

In the resistor 1 of the second embodiment described above, the base material 10 has a rectangular shape in a plan view, and the resistor 1 is a chip resistor, but the present invention is not limited thereto. For example, the base material 10 may be cylindrical. That is, the resistor 1 may have a cylindrical shape. In this case, the resistor 1 includes a base material 10, a resistor 11, and a protective film 12. Further, the resistor 1 does not include the upper surface electrode 130, the upper surface electrode 131, the end surface electrode 132, the back surface electrode 133, the first intermediate electrode 134, the second intermediate electrode 135, and the external electrode 136, and is electrically connected to the resistor 11. It may be provided with a pair of electrodes.

3-4. Examples of the second embodiment Hereinafter, examples of the second embodiment and comparative examples will be described.

(Example 1)
A resistor of Example 1 having the same structure as the resistor 1 shown in FIGS. 5A and 5B and having a resistance value of 22Ω was produced. The resin composition used for forming the protective film for the resistor of Example 1 contains all of Ni, Co, Zn, and Ti as low noise components. Therefore, the protective film of the resistor of Example 1 contains all of Ni, Co, Zn, and Ti.

(Comparative Example 1)
A resistor of Comparative Example 1 having the same structure as the resistor 1 shown in FIGS. 5A and 5B and having a resistance value of 22Ω was produced. The resin composition used for forming the protective film of the resistor of Comparative Example 1 does not contain Ni, Co, Zn, and Ti, but contains carbon black. Therefore, the protective film of the resistor of Comparative Example 1 does not contain Ni, Co, Zn, and Ti, but contains carbon black.

(Measurement of noise caused by resistors)
The noise caused by the resistors of Example 1 and Comparative Example 1 was measured.

FIG. 8A is a circuit diagram showing a circuit for measuring noise caused by a resistor. The circuit shown in FIG. 8A includes a noise measuring instrument 20 and a resistor 1. The noise measuring device 20 includes an output unit 21, an input unit 22, an oscillator 23, a detection unit 24, and a determination unit 25. The output unit 21 is connected to one of the pair of external electrodes 136 (see FIG. 5A) included in the resistor 1 by a coaxial cable. Further, the input unit 22 is connected to one of the pair of external electrodes 136 (see FIG. 5A) included in the resistor 1 by a coaxial cable. Therefore, the output unit 21 and the resistor 1 are electrically connected, and the input unit 22 and the resistor 1 are electrically connected, and a current flows through the resistor 1. The oscillator 23 is electrically connected to the output unit 21 and can transmit a sine wave from the output unit 21. Therefore, the sine wave transmitted from the output unit 21 flows through the resistor 1 and is received by the input unit 22. The detection unit 24 is electrically connected to the input unit 22 and can detect the sine wave received by the input unit 22. The determination unit 25 is electrically connected to the oscillator 23 and the detection unit 24. The determination unit 25 can compare the sine wave transmitted from the oscillator 23 with the sine wave detected by the detection unit 24 and measure the noise caused by the resistor 1.

8B and 8C are graphs showing noise with respect to the voltage applied to the resistor 1 of Example 1 and Comparative Example 1. FIG. 8B shows a case where the frequency of the sine wave is 100 Hz (low frequency band). FIG. 8C shows a case where the frequency of the sine wave is 20 kHz (high frequency band). In the graphs shown in FIGS. 8B and 8C, the voltage applied to the resistor 1 is shown, and the vertical axis shows the value of noise caused by the resistor. In the graphs of FIGS. 8B and 8C, the solid line shows the resistor 1 of Example 1, and the broken line shows the resistor of Comparative Example 1.

According to FIG. 8B, the noise caused by the resistor 1 in Example 1 in which the protective film contains all of Ni, Co, Zn, and Ti is higher than that in Comparative Example 1 in which the protective film 12 contains carbon black. Tends to be less likely to occur. In particular, when the voltage applied to the resistor 1 is 0.2 V or more, the noise caused by the resistor 1 is smaller in Example 1 than in Comparative Example 1. Further, according to FIG. 8C, the noise caused by the resistor 1 in Example 1 in which the protective film contains all of Ni, Co, Zn, and Ti is higher than that in Comparative Example 1 in which the protective film contains carbon black. Tends to be less likely to occur. In particular, when the voltage applied to the resistor 1 is 0.05 V or more, the noise caused by the resistor is smaller in Example 1 than in Comparative Example 1.

(Examples 2 to 6)
Resistors of Examples 2 to 6 having the same configurations as those of Example 1 were produced except that the trimming amount of the resistor 11 was as shown in Table 1 below.

(Distribution of power density)
9A to 9E show the simulation results of the power density distribution of the resistor 1 of Examples 2 to 6. In the resistor 1, the dimensions of the resistor 11 in a plan view were 1.0 mm × 0.5 mm. The voltage applied between the pair of electrodes 13 was 1 V. In FIGS. 9A to 9E, the portion where the power density is 1 × 10 ⁶ pW / um ² or more has a high contrast.

As shown in FIGS. 9A to 9E, a portion in which the power density of the resistor 11 is 1 × 10 ⁶ pW / um ² or more with respect to the area of the portion located between the pair of electrodes 13 of the resistor 11 in a plan view. The ratio of the area of is larger in the resistors 1 of Examples 2 to 4 than in the resistors 1 of Examples 5 and 6. This is because the trimming rate of the resistors 1 of Examples 2 to 4 is 50% or less, and the trimming rate of the resistors 1 of Examples 5 and 6 is larger than 50%.

4. Summary The resistor (1) according to the first aspect is provided with a base material (10), a resistor (11), and a protective film (12) laminated in this order.

The resistor (1) according to the second aspect further includes at least one of a base intermediate layer (110) and a cover intermediate layer (111) in the first aspect. The base intermediate layer (110) is an aluminum nitride layer that is interposed between the base material (10) and the resistor (11), is in direct contact with the resistor (11), and is an aluminum nitride layer. The cover intermediate layer (111) is an aluminum nitride layer that is interposed between the resistor (11) and the protective film (12), is in direct contact with the resistor (11), and is an aluminum nitride layer.

According to this configuration, the heat generated by the resistor (11) can be released through at least one of the base intermediate layer (110) and the cover intermediate layer (111). Therefore, the resistor (1) easily releases the heat generated by the resistor (11).

In the resistor (1) according to the third aspect, the base material (10) is made of alumina in the first or second aspect.

According to this configuration, since the lower surface of the resistor (11) is in contact with the base intermediate layer (110), the heat generated by the resistor (11) can be released to the base intermediate layer (110). Even if the base material (10) is made of alumina, the heat generated by the resistor (11) is easily released.

The resistor (1) according to the fourth aspect includes a base intermediate layer (110) in any one of the first to third aspects.

According to this configuration, the heat generated by the resistor (11) can be released to the base intermediate layer (110) which is in direct contact with the lower surface of the resistor (11).

The resistor (1) according to the fifth aspect further includes an electrode (13) electrically connected to the resistor (11) in the fourth aspect. The base intermediate layer (110) is in direct contact with the electrode (13).

According to this configuration, the heat released to the base intermediate layer (110) can be released to the electrode (13). When the resistor (1) is mounted in the circuit of an electronic device, the electrode (13) and the circuit are connected by solder, so that the heat released from the base intermediate layer (110) to the electrode (13) is soldered. Can be released to.

In the fourth or fifth aspect of the resistor (1) according to the sixth aspect, more than half of the base intermediate layer (110) is made of single crystal aluminum nitride.

According to this configuration, the thickness of the base intermediate layer (110) can be reduced, and the thickness of the resistor (1) can be reduced.

In the resistor (1) according to the seventh aspect, the thickness of the base intermediate layer (110) is 3 μm or more and 20 μm or less in any one of the fourth to sixth aspects.

According to this configuration, the heat generated by the resistor (11) is easily released to the base intermediate layer (110), and the base intermediate layer (110) is easily thinned.

In the resistor (1) according to the eighth aspect, the base intermediate layer (110) is a sputtering layer in any one of the fourth to seventh aspects.

According to this configuration, the base intermediate layer (110) can be easily formed of single crystal aluminum nitride, and the thickness of the base intermediate layer (110) can be easily reduced.

The resistor (1) according to the ninth aspect includes a cover intermediate layer (111) in any one of the second to eighth aspects.

According to this configuration, the heat generated by the resistor (11) can be released to the cover intermediate layer (111) which is in direct contact with the upper surface of the resistor (11).

The resistor (1) according to the tenth aspect further includes an electrode (13) electrically connected to the resistor (11) in the ninth aspect. The cover intermediate layer (111) is in direct contact with the electrode (13).

According to this configuration, the heat released to the cover intermediate layer (111) can be released to the electrode (13). When the resistor (1) is mounted in the circuit of an electronic device, the electrode (13) and the circuit are connected by solder, so that the heat released from the cover intermediate layer (111) to the electrode (13) is soldered. Can be released to.

In the ninth or tenth aspect of the resistor (1) according to the eleventh aspect, more than half of the cover intermediate layer (111) is made of single crystal aluminum nitride.

According to this configuration, the thickness of the cover intermediate layer (111) can be reduced, and the thickness of the resistor (1) can be reduced.

In the resistor (1) according to the twelfth aspect, the thickness of the cover intermediate layer (111) is 3 μm or more and 20 μm or less in any one of the ninth to eleventh aspects.

According to this configuration, the heat generated by the resistor (11) can be easily released to the cover intermediate layer (111), and the cover intermediate layer (111) can be thinned.

In the resistor (1) according to the thirteenth aspect, the cover intermediate layer (111) is a sputtering layer in any one of the ninth to twelfth aspects.

According to this configuration, the cover intermediate layer (111) can be easily formed of single crystal aluminum nitride, and the thickness of the cover intermediate layer (111) can be easily reduced.

In the resistor (1) according to the fourteenth aspect, in any one of the first to thirteenth aspects, the protective film 12 includes one or more of Ni, Co, Zn, and Ti.

According to this configuration, noise caused by the resistor (1) is less likely to occur. As a result, when the resistor (1) is mounted on the analog circuit provided in the audio device, the sound quality of the sound emitted from the output device such as a speaker or earphone connected to the audio device is improved.

In the resistor (1) according to the fifteenth aspect, in any one of the first to the fourteenth aspects, the protective film (12) includes all of Ni, Co, Zn, and Ti.

According to this configuration, noise caused by the resistor (1) is particularly unlikely to occur.

In the resistor (1) according to the sixteenth aspect, the trimming rate of the resistor (11) is half or less in any one of the first to fifteenth aspects.

According to this configuration, when a voltage is applied to the resistor (11), the proportion of the portion where the power density becomes high can be increased.

The resistor (1) according to the seventeenth aspect further includes a pair of electrodes (13, 13) electrically connected to the resistor (11) in any one of the first to sixteenth aspects. .. In the resistor (1), when a voltage of 1 V is applied between the pair of electrodes (13, 13), the area of the portion located between the pair of electrodes (13) of the resistor (11) in a plan view. The ratio of the area of the portion where the power density of the resistor (11) is 1 × 10 ⁶ pW / μm ^{2 or more to that of the resistor (11) is 30% or more.}

According to this configuration, when the resistor (1) is mounted on the analog circuit provided in the audio device, the sound quality of the sound emitted from the output device such as a speaker or earphone connected to the audio device is improved.

In the resistor (1) according to the eighteenth aspect, the resistor (11) and the protective film (12) are in direct contact with each other in any one of the first to seventeenth aspects.

According to this configuration, noise caused by the resistor (1) is particularly unlikely to occur.

In the resistor (1) according to the nineteenth aspect, in any one of the first to eighteenth aspects, the protective film (12) is a cured product of the resin composition. This resin composition contains one or more of Ni, Co, Zn, and Ti, and the total ratio of Ni, Co, Zn, and Ti to this resin composition is 15% by weight or more.

According to this configuration, noise caused by the resistor (1) is particularly unlikely to occur.

The resistor (1) according to the twentieth aspect is used in an audio device in any one of the first to nineteenth aspects, and is mounted on an analog circuit included in the audio device.

According to this configuration, noise caused by the resistor (1) is unlikely to occur. Therefore, when the resistor (1) is mounted on the analog circuit provided in the audio device, the speaker, earphone, etc. connected to the audio device can be used. The sound quality of the sound emitted from the output device is improved.

1 Resistor 10 Base material 11 Resistor 110 Base intermediate layer 111 Cover intermediate layer 12 Protective film 13 Electrode

Claims (20)

With the base material
With a resistor
The protective film and the protective film are laminated in this order.
Resistor. The resistor is interposed between the base material and the resistor, is in direct contact with the resistor, and is interposed between the base intermediate layer which is an aluminum nitride layer, and the resistor and the protective film. And at least one of the cover intermediate layers, which is an aluminum nitride layer, is further provided.
The resistor according to claim 1. The base material is made of alumina.
The resistor according to claim 1 or 2. The base intermediate layer is provided.
The resistor according to claim 2 or 3. Further provided with an electrode electrically connected to the resistor
The base intermediate layer is in direct contact with the electrode.
The resistor according to claim 4. More than half of the base intermediate layer is composed of single crystal aluminum nitride.
The resistor according to claim 4 or 5. The thickness of the base intermediate layer is 3 μm or more and 20 μm or less.
The resistor according to any one of claims 4 to 6. The base intermediate layer is a sputtering layer.
The resistor according to any one of claims 4 to 7. The cover intermediate layer is provided.
The resistor according to any one of claims 2 to 8. It further includes an electrode that is electrically connected to the resistor.
The cover intermediate layer is in direct contact with the electrode.
The resistor according to claim 9. More than half of the cover intermediate layer is made of single crystal aluminum nitride.
The resistor according to claim 9 or 10. The thickness of the cover intermediate layer is 3 μm or more and 20 μm or less.
The resistor according to any one of claims 9 to 11. The cover intermediate layer is a sputtering layer.
The resistor according to any one of claims 9 to 12. The protective film contains one or more of Ni, Co, Zn, and Ti.
The resistor according to claim 1. The resistor according to claim 14, wherein the protective film contains all of Ni, Co, Zn, and Ti. The resistor according to claim 14 or 15, wherein the trimming rate of the resistor is one half or less. Further comprising a pair of electrodes electrically connected to the resistor
When a voltage of 1 V is applied between the pair of electrodes, the power density of the resistor is 1 × 10 ⁶ pW / with respect to the area of the portion of the resistor located between the pair of electrodes in a plan view. The ratio of the area of the portion having μm ^{2 or more is 30% or more.}
The resistor according to any one of claims 14 to 16. The resistor according to any one of claims 14 to 17, wherein the resistor and the protective film are in direct contact with each other. The protective film is a cured product of the resin composition.
The resin composition contains one or more of Ni, Co, Zn, and Ti.
The total ratio of Ni, Co, Zn, and Ti to the resin composition is 15% by weight or more.
The resistor according to any one of claims 14 to 18. The resistor according to any one of claims 14 to 19, which is mounted on an analog circuit included in an audio device.

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