JP7303663B2 - Strain gauge, sensor module, connection structure - Google Patents

Description

The present invention relates to strain gauges, sensor modules, and connection structures.

A strain gauge is known that is attached to an object to be measured to detect the strain of the object. A strain gauge includes a resistor that detects strain, and a material containing, for example, Cr (chromium) or Ni (nickel) is used as the material of the resistor. Further, for example, both ends of the resistor are used as electrodes, and lead wires for external connection are connected to the electrodes by soldering to enable signal input/output with electronic components (see, for example, Patent Document 1). .

JP 2016-74934 A

However, when a conductor such as a lead wire is connected to the electrode by soldering, it may be necessary to re-solder the connection.

SUMMARY OF THE INVENTION It is an object of the present invention to provide a strain gauge having electrodes capable of suppressing a decrease in connection strength with a conductor.

The present strain gauge comprises a base material having flexibility, a resistor formed on the base material from a material containing at least one of chromium and nickel, electrodes electrically connected to the resistor, and the electrode comprises a magnetic force layer containing Ni, Ni-based alloys, Fe-based alloys, or Co-based alloys .

According to the disclosed technique, it is possible to provide a strain gauge having electrodes capable of suppressing a decrease in connection strength with a conductor.

1 is a plan view illustrating a strain gauge according to a first embodiment; FIG. 1 is a cross-sectional view illustrating a strain gauge according to a first embodiment; FIG. FIG. 4 is a diagram illustrating manufacturing steps of the strain gauge according to the first embodiment; FIG. 11 is a plan view illustrating a sensor module according to a second embodiment; FIG. 5 is a cross-sectional view illustrating a sensor module according to a second embodiment; FIG. 11 is a plan view illustrating a sensor module according to Modification 1 of the second embodiment; FIG. 10 is a cross-sectional view illustrating a sensor module according to Modification 1 of the second embodiment;

BEST MODE FOR CARRYING OUT THE INVENTION Hereinafter, embodiments for carrying out the invention will be described with reference to the drawings. In each drawing, the same components are denoted by the same reference numerals, and redundant description may be omitted.

<First Embodiment>
1 is a plan view illustrating a strain gauge according to a first embodiment; FIG. FIG. 2 is a cross-sectional view illustrating the strain gauge according to the first embodiment, showing a cross section along line AA in FIG. Referring to FIGS. 1 and 2, the strain gauge 1 has a substrate 10, a resistor 30, and electrodes 40. As shown in FIG.

In this embodiment, for the sake of convenience, in the strain gauge 1, the side of the substrate 10 on which the resistor 30 is provided is the upper side or one side, and the side on which the resistor 30 is not provided is the lower side or the other side. and The surface on which the resistor 30 of each part is provided is defined as one surface or upper surface, and the surface on which the resistor 30 is not provided is defined as the other surface or lower surface. However, the strain gauge 1 can be used upside down or arranged at any angle. Further, the term "planar view" refers to viewing an object from the direction normal to the upper surface 10a of the substrate 10, and the term "planar shape" refers to the shape of the object viewed from the direction normal to the upper surface 10a of the substrate 10. and

The base material 10 is a member that serves as a base layer for forming the resistor 30 and the like, and has flexibility. The thickness of the base material 10 is not particularly limited and can be appropriately selected depending on the purpose, and is, for example, about 5 μm to 500 μm. In particular, when the thickness of the base material 10 is 5 μm to 200 μm, the transmission of strain from the surface of the strain generating body bonded to the lower surface of the base material 10 via an adhesive layer or the like, and the dimensional stability against the environment. The thickness is preferably 10 μm or more, and more preferable from the viewpoint of insulation.

The substrate 10 is made of, for example, PI (polyimide) resin, epoxy resin, PEEK (polyetheretherketone) resin, PEN (polyethylene naphthalate) resin, PET (polyethylene terephthalate) resin, PPS (polyphenylene sulfide) resin, polyolefin resin, or the like. can be formed from an insulating resin film of Note that the film refers to a flexible member having a thickness of about 500 μm or less.

Here, "formed from an insulating resin film" does not prevent the base material 10 from containing fillers, impurities, etc. in the insulating resin film. The substrate 10 may be formed from, for example, an insulating resin film containing a filler such as silica or alumina.

The resistor 30 is a thin film formed in a predetermined pattern on the substrate 10, and is a sensing part that undergoes a change in resistance when subjected to strain. The resistor 30 may be formed directly on the top surface 10a of the base material 10, or may be formed on the top surface 10a of the base material 10 via another layer. In addition, in FIG. 1, the resistor 30 is shown with a pear-skin pattern for the sake of convenience.

The resistor 30 can be made of, for example, a material containing Cr (chromium), a material containing Ni (nickel), or a material containing both Cr and Ni. That is, the resistor 30 can be made of a material containing at least one of Cr and Ni. Materials containing Cr include, for example, a Cr mixed phase film. Materials containing Ni include, for example, Cu—Ni (copper nickel). Materials containing both Cr and Ni include, for example, Ni—Cr (nickel chromium).

Here, the Cr mixed phase film is a film in which Cr, CrN, Cr ₂ N, or the like is mixed. The Cr mixed phase film may contain unavoidable impurities such as chromium oxide.

The thickness of the resistor 30 is not particularly limited and can be appropriately selected depending on the purpose, and is, for example, about 0.05 μm to 2 μm. In particular, when the thickness of the resistor 30 is 0.1 μm or more, the crystallinity of the crystal (for example, the crystallinity of α-Cr) forming the resistor 30 is preferably improved. It is further preferable in that cracks in the film caused by internal stress of the film constituting the film 30 and warping from the base material 10 can be reduced.

For example, when the resistor 30 is a Cr mixed phase film, the stability of gauge characteristics can be improved by using α-Cr (alpha chromium), which is a stable crystal phase, as the main component. In addition, since the resistor 30 is mainly composed of α-Cr, the gauge factor of the strain gauge 1 is 10 or more, and the temperature coefficient of gauge factor TCS and the temperature coefficient of resistance TCR are within the range of -1000 ppm/°C to +1000 ppm/°C. can be Here, the main component means that the target material accounts for 50% by mass or more of all the materials constituting the resistor. It is preferable to include the above. Note that α-Cr is Cr with a bcc structure (body-centered cubic lattice structure).

The electrodes 40 extend from both ends of the resistor 30 and are formed in a substantially rectangular shape wider than the resistor 30 in plan view. The electrodes 40 are a pair of electrodes for outputting to the outside the change in the resistance value of the resistor 30 caused by strain, and are connected to, for example, lead wires for external connection. The resistor 30 extends, for example, from one of the electrodes 40 while folding back in a zigzag manner and is electrically connected to the other electrode 40 .

The electrode 40 has a laminated structure in which a plurality of metal layers are laminated. Specifically, the electrode 40 includes terminal portions 41 extending from both ends of the resistor 30 and magnetic layers 42 formed on the upper surfaces of the terminal portions 41 . The magnetic force layer 42 is a layer that generates magnetic force, and attracts conductors (lead wires, flexible printed circuit boards, etc.) that are electrically connected to the electrodes 40 .

The magnetic force layer 42 is not particularly limited as long as it is a layer formed of a material capable of generating a magnetic force that sticks to a conductor, and can be appropriately selected according to the purpose. A layer in which a Co-based alloy is magnetized can be used.

Specific examples of the material of the magnetic force layer 42 include Co _X Ni _Y Fe _Z (x+y+z=100 ), FeP, NiFeP, CoNiFeP, FeB, NiFeB, CoNiFeB, Ni-W, Nd ₂ Fe ₁₄ B, SmCo ₅ and Sm _{2 .} A thin film of an alloy selected from the group consisting of Co ₁₇ , SrFe ₁₂ O ₁₉ , and BaFe ₁₂ O ₁₉ , a laminated film obtained by laminating thin films of any one of this group of alloys, and the like can be mentioned.

Further, the magnetic force layer 42 may be a bonded magnet obtained by adding a magnetic powder filler to the resin material exemplified as the material of the base material 10 . Magnetic powder fillers include, for example, powders of alloys selected from the above group.

The thickness of the magnetic force layer 42 is preferably about 0.5 μm to 500 μm. The surface magnetic flux density of the magnetic force layer 42 is preferably about 1 mT to 500 mT, more preferably 30 mT or more and 300 mT or less. By setting the surface magnetic flux density of the magnetic force layer 42 to 30 mT or more, it is possible to secure a sufficient attractive force to the conductor. Also, by setting the surface magnetic flux density of the magnetic layer 42 to 300 mT or less, attachment and detachment of the magnetic layer 42 and the conductor are facilitated.

A cover layer 60 (insulating resin layer) may be provided on the upper surface 10a of the base material 10 so as to cover the resistor 30 and expose the electrode 40 . By providing the cover layer 60, the resistor 30 can be prevented from being mechanically damaged. Also, by providing the cover layer 60, the resistor 30 can be protected from moisture and the like. Note that the cover layer 60 may be provided so as to cover the entire portion excluding the electrode 40 .

The cover layer 60 can be made of insulating resin such as PI resin, epoxy resin, PEEK resin, PEN resin, PET resin, PPS resin, composite resin (eg, silicone resin, polyolefin resin). The cover layer 60 may contain fillers or pigments. The thickness of the cover layer 60 is not particularly limited and can be appropriately selected according to the purpose, but is, for example, about 2 μm to 30 μm.

In order to manufacture the strain gauge 1, first, in the step shown in FIG. to form The materials and thicknesses of the resistor 30 and the terminal portion 41 are as described above. The resistor 30 and the terminal portion 41 can be integrally formed from the same material.

The resistor 30 and the terminal portion 41 can be formed by, for example, forming a film by magnetron sputtering using a raw material capable of forming the resistor 30 and the terminal portion 41 as a target, and patterning the film by photolithography. The resistor 30 and the terminal portion 41 may be formed by using a reactive sputtering method, a vapor deposition method, an arc ion plating method, a pulse laser deposition method, or the like instead of the magnetron sputtering method.

From the viewpoint of stabilizing the gauge characteristics, before forming the resistor 30 and the terminal part 41, a film thickness of about 1 nm to 100 nm is formed on the upper surface 10a of the base material 10 as a base layer by, for example, conventional sputtering. Vacuum deposition of the layer is preferred. After forming the resistor 30 and the terminal portion 41 over the entire upper surface of the functional layer, the functional layer is patterned into the planar shape shown in FIG. 1 together with the resistor 30 and the terminal portion 41 by photolithography.

In the present application, a functional layer refers to a layer having a function of promoting crystal growth of at least the resistor 30 as an upper layer. The functional layer preferably further has a function of preventing oxidation of the resistor 30 due to oxygen and moisture contained in the substrate 10 and a function of improving adhesion between the substrate 10 and the resistor 30 . The functional layer may also have other functions.

Since the insulating resin film that constitutes the base material 10 contains oxygen and moisture, especially when the resistor 30 contains Cr, Cr forms a self-oxidizing film. Being prepared helps.

The material of the functional layer is not particularly limited as long as it has a function of promoting the crystal growth of the resistor 30, which is the upper layer, and can be appropriately selected according to the purpose. titanium), V (vanadium), Nb (niobium), Ta (tantalum), Ni (nickel), Y (yttrium), Zr (zirconium), Hf (hafnium), Si (silicon), C (carbon), Zn ( zinc), Cu (copper), Bi (bismuth), Fe (iron), Mo (molybdenum), W (tungsten), Ru (ruthenium), Rh (rhodium), Re (rhenium), Os (osmium), Ir ( iridium), Pt (platinum), Pd (palladium), Ag (silver), Au (gold), Co (cobalt), Mn (manganese), Al (aluminum) metals, alloys of any metal of this group, or compounds of any metal of this group.

Examples of the above alloy include FeCr, TiAl, FeNi, NiCr, CrCu, and the like. Examples of _the above compounds include TiN, TaN _{, Si3N4} , _TiO2 , _Ta2O5 , _SiO2 and the like.

The functional layer can be formed, for example, by conventional sputtering using a raw material capable of forming the functional layer as a target and introducing Ar (argon) gas into the chamber in a vacuum. By using the conventional sputtering method, the functional layer is formed while etching the upper surface 10a of the base material 10 with Ar. Therefore, the amount of film formation of the functional layer can be minimized and an effect of improving adhesion can be obtained.

However, this is an example of the method of forming the functional layer, and the functional layer may be formed by another method. For example, before forming the functional layer, the upper surface 10a of the substrate 10 is activated by a plasma treatment using Ar or the like to obtain an effect of improving adhesion, and then the functional layer is vacuum-formed by magnetron sputtering. You may use the method to do.

The combination of the material of the functional layer and the materials of the resistor 30 and the terminal portion 41 is not particularly limited and can be appropriately selected according to the purpose. A Cr mixed phase film containing α-Cr (alpha chromium) as a main component can be formed.

In this case, for example, the resistive element 30 and the terminal portion 41 can be formed by magnetron sputtering using a raw material capable of forming a Cr mixed-phase film as a target and introducing Ar gas into the chamber. Alternatively, the resistive element 30 and the terminal portion 41 may be formed by reactive sputtering using pure Cr as a target, introducing an appropriate amount of nitrogen gas together with Ar gas into the chamber.

In these methods, the growth surface of the Cr mixed phase film is defined by the functional layer made of Ti, and a Cr mixed phase film containing α-Cr, which has a stable crystal structure, as a main component can be formed. In addition, the diffusion of Ti constituting the functional layer into the Cr mixed phase film improves the gauge characteristics. For example, the gauge factor of the strain gauge 1 can be 10 or more, and the temperature coefficient of gauge factor TCS and the temperature coefficient of resistance TCR can be set within the range of -1000 ppm/°C to +1000 ppm/°C. When the functional layer is made of Ti, the Cr mixed phase film may contain Ti or TiN (titanium nitride).

When the resistor 30 is a Cr mixed phase film, the functional layer made of Ti has a function of promoting crystal growth of the resistor 30 and a function of preventing oxidation of the resistor 30 due to oxygen and moisture contained in the base material 10. , and the function of improving the adhesion between the substrate 10 and the resistor 30 . The same is true when Ta, Si, Al, or Fe is used as the functional layer instead of Ti.

By providing the functional layer under the resistor 30 in this manner, the crystal growth of the resistor 30 can be promoted, and the resistor 30 can be manufactured in a stable crystal phase. As a result, in the strain gauge 1, the stability of gauge characteristics can be improved. In addition, by diffusing the material forming the functional layer into the resistor 30, the gauge characteristics of the strain gauge 1 can be improved.

Next, in the step shown in FIG. 3B, a magnetic force layer 42 is formed on the upper surface of the terminal portion 41 . The magnetic layer 42 can be formed, for example, by forming a film by magnetron sputtering using a raw material capable of forming the magnetic layer 42 as a target, and patterning the film by photolithography. The magnetic force layer 42 may be formed using an electroplating method instead of the sputtering method. The material and thickness of the magnetic force layer 42 are as described above. After forming the magnetic layer 42, the magnetic layer 42 is magnetized. The surface magnetic flux density of the magnetic force layer 42 is as described above. As a result, the electrode 40 in which the magnetic layer 42 is laminated on the upper surface of the terminal portion 41 is formed.

After forming the electrodes 40, the strain gauge 1 is completed by providing a cover layer 60 exposing the electrodes 40 on the upper surface 10a of the substrate 10, if necessary. The cover layer 60 is produced, for example, by laminating a semi-cured thermosetting insulating resin film on the upper surface 10a of the base material 10 so as to cover the resistors 30 and expose the electrodes 40, and heat and cure the film. can. The cover layer 60 is prepared by applying a liquid or paste thermosetting insulating resin to the upper surface 10a of the base material 10 so as to cover the resistor 30 and expose the electrodes 40, and heat and harden the resin. good too.

When a functional layer is provided on the upper surface 10a of the substrate 10 as a base layer for the resistor 30 and the terminal portion 41, the strain gauge 1 has a cross-sectional shape shown in FIG. 3(c). A layer indicated by reference numeral 20 is a functional layer. The planar shape of the strain gauge 1 when the functional layer 20 is provided is the same as in FIG.

In this way, the strain gauge 1 has the electrode 40 with the magnetic layer 42, so that the conductor made of a magnetic material can be attracted by the magnetic layer 42, so soldering between the electrode 40 and the conductor is unnecessary. is. Therefore, it is possible to suppress the deterioration of the connection strength between the electrode 40 and the conductor, which is caused by re-soldering the connection in the related art.

Also, the electrical connection between the electrode 40 and the conductor can be simplified, and the conductor can be easily attached to and detached from the electrode 40 when necessary.

In addition, problems such as solder leaching caused by solder can be eliminated in principle, and connection reliability can be improved by preventing a decrease in connection strength between the conductor and the electrode 40 .

<Second embodiment>
The second embodiment shows an example of a sensor module using strain gauges. In addition, in the second embodiment, the description of the same components as those of the already described embodiment may be omitted.

FIG. 4 is a plan view illustrating the sensor module according to the second embodiment. FIG. 5 is a cross-sectional view illustrating the sensor module according to the second embodiment, showing a cross section along line BB in FIG. 4 and 5, the sensor module 5 has a strain gauge 1 and a conductor 70. As shown in FIG. Note that the cover layer 60 may be provided so as to cover the entire portion excluding the electrode 40 .

The conductor 70 is, for example, a lead wire, a flexible printed circuit board, or the like. One end of the conductor 70 is not particularly limited as long as it is made of a conductive material that can be attracted to the magnetic layer 42, and can be appropriately selected according to the purpose. There are those that have been applied. Incidentally, the entire conductor 70 may be a copper wire or a copper foil whose surface is plated with nickel. Also, the conductor 70 may be partially covered with an insulator.

The other end of the conductor 70 is open and can be connected to an electrode of another substrate, an electrode of a semiconductor chip, or the like when necessary. For example, the other end of the conductor 70 may be a copper wire or copper foil whose surface is plated with nickel, and may be connected to an electrode that generates magnetic force on another substrate or an electrode that generates magnetic force on a semiconductor chip.

As described above, the sensor module 5 has a connection structure between the electrode 40 having the magnetic force layer 42 and the conductor 70 made of a magnetic material, so soldering between the electrode 40 and the conductor 70 is not required. Therefore, it is possible to suppress the deterioration of the connection strength between the electrode 40 and the conductor 70, which is caused by re-soldering the connection in the related art.

Moreover, the electrical connection between the electrode 40 and the conductor 70 can be simplified, and the conductor 70 can be easily attached/detached to/from the electrode 40 when necessary.

In addition, problems such as solder erosion caused by solder can be eliminated in principle, and connection reliability can be improved by preventing a decrease in connection strength between the conductor 70 and the electrode 40 .

Although the connection structure in which the conductor is magnetically attracted to the electrode of the strain gauge has been described here, the connection structure according to the present invention is not limited to the strain gauge. That is, as long as it is a connection structure having an electrode provided with a magnetic force layer formed on a base material and a conductor having one end attracted to the magnetic force layer, the connection structure according to the present invention is a connection structure other than an electrode of a strain gauge. It is also applicable to The connection structure according to the present invention can be applied to, for example, electrodes of wiring substrates, semiconductor devices, and the like.

<Modification 1 of Second Embodiment>
Modification 1 of the second embodiment shows another example of a sensor module using a strain gauge. In addition, in Modification 1 of the second embodiment, the description of the same configuration parts as those of the already described embodiment may be omitted.

FIG. 6 is a plan view illustrating a sensor module according to Modification 1 of the second embodiment. FIG. 7 is a cross-sectional view illustrating a sensor module according to Modification 1 of the second embodiment, showing a cross section along line CC of FIG.

6 and 7, the sensor module 5A has a strain gauge 1 with an elongated substrate 10 and an electronic component 200 mounted on the upper surface 10a of the substrate 10. As shown in FIG.

The electronic component 200 is, for example, a semiconductor chip that amplifies an electric signal input from the resistor 30 via the electrode 40 and performs temperature correction. Passive components such as capacitors may be mounted together with the semiconductor chip. The electronic component 200 is mounted on the upper surface 10a of the substrate 10 via an adhesive layer such as a die attach film, for example.

Electronic component 200 has electrodes 210 . The electrode 210 includes a terminal portion 211 made of copper or the like and a magnetic force layer 212 formed on the terminal portion 211 . The material and thickness of the magnetic force layer 212 are the same as those of the magnetic force layer 42, for example. One end of the conductor 70 is attracted to the magnetic force layer 42 and the other end is attracted to the magnetic force layer 212 . Thereby, the electrode 40 and the electrode 210 are electrically connected by the conductor 70 .

When the cover layer 60A is not provided on the upper surface 10a of the base material 10, a cover layer is provided on the upper surface 10a of the base material 10 so as to cover the resistor 30, the electrode 40, the electronic component 200, the electrode 210, and the conductor 70. 60B (second insulating resin layer) may be provided. By providing the cover layer 60B, the resistor 30, the electrode 40, the electronic component 200, the electrode 210, and the conductor 70 can be prevented from being mechanically damaged. Also, by providing the cover layer 60B, the resistor 30, the electrode 40, the electronic component 200, the electrode 210, and the conductor 70 can be protected from moisture and the like.

The cover layer 60B can be made of insulating resin such as PI resin, epoxy resin, PEEK resin, PEN resin, PET resin, PPS resin, composite resin (eg, silicone resin, polyolefin resin). The cover layer 60B may contain fillers and pigments. The thickness of the cover layer 60B is not particularly limited and can be appropriately selected according to the purpose, but is, for example, about 2 μm to 30 μm.

The cover layer 60B is, for example, a semi-cured thermosetting insulating resin film on the upper surface 10a of the substrate 10 so as to cover the resistors 30, the electrodes 40, the electronic components 200, the electrodes 210, and the conductors 70. It can be produced by laminating and curing by heating. The cover layer 60B is formed by applying a liquid or paste thermosetting insulating resin to the upper surface 10a of the base material 10 so as to cover the resistors 30, the electrodes 40, the electronic components 200, the electrodes 210, and the conductors 70. , may be produced by heating and curing.

When the cover layer 60A is provided on the upper surface 10a of the substrate 10, a cover layer 60B may be further provided so as to cover the cover layer 60A, the electrodes 40, the electronic components 200, the electrodes 210, and the conductors 70. do not have. By providing the cover layer 60B, it is possible to prevent the electrodes 40, the electronic components 200, the electrodes 210, and the conductors 70 not covered by the cover layer 60A from being mechanically damaged. Moreover, by providing the cover layer 60B, the electrodes 40, the electronic component 200, the electrodes 210, and the conductors 70 which are not covered by the cover layer 60A can be protected from moisture and the like. Note that the cover layer 60A and the cover layer 60B may be formed from the same material, or may be formed from different materials.

Thus, sensor module 5A has electrode 40 having magnetic layer 42 and electrode 210 having magnetic layer 212 . One end of the conductor 70 is attracted to the magnetic layer 42 and the other end is attracted to the magnetic layer 212 , so that the electrodes 40 and 210 are electrically connected by the conductor 70 . Therefore, it is not necessary to connect the electrode 40 and the electrode 210 with a bonding wire, solder, or the like. As a result, the sensor module 5A has the same effect as the sensor module 5 does.

Although the preferred embodiments and the like have been described in detail above, the present invention is not limited to the above-described embodiments and the like, and various modifications and substitutions can be made to the above-described embodiments and the like without departing from the scope of the claims. can be added.

1 strain gauge 5, 5A sensor module 10 substrate 10a upper surface 20 functional layer 30 resistor 40, 210 electrode 41, 211 terminal portion 42, 212 magnetic force layer 60, 60A, 60B cover layer, 70 conductors, 200 electronic components

Claims (10)

a flexible substrate;
a resistor formed of a material containing at least one of chromium and nickel on the base;
and an electrode electrically connected to the resistor,
The strain gauge , wherein the electrode comprises a magnetic force layer containing Ni, Ni-based alloy, Fe-based alloy, or Co-based alloy . The magnetic layer is Co _X Ni _Y Fe _Z (x+y+z=100) , FeP, NiFeP, CoNiFeP, FeB, NiFeB, CoNiFeB, Ni-W, Nd ₂ Fe ₁₄ B, SmCo ₅ , Sm ₂ Co ₁₇ , SrFe ₁₂ O ₁₉ , BaFe ₁₂ O ₁₉ , a laminated film obtained by stacking thin films of the alloy, or a bonded magnet containing powder of the alloy. 3. The strain gauge according to claim 1 , wherein said resistor is mainly composed of alpha chromium. 4. The strain gauge according to claim 3 , wherein the resistor contains 80% by weight or more of alpha chrome. The strain gauge according to claim 3 or 4 , wherein the resistor is a Cr mixed phase film . Having a functional layer formed of a metal, an alloy, or a metal compound on one surface of the base material,
The strain gauge according to any one of claims 1 to 5 , wherein the resistor is formed on one surface of the functional layer. 7. The strain gauge according to claim 6 , wherein said functional layer has a function of promoting crystal growth of said resistor. a strain gauge according to any one of claims 1 to 7 ;
and a conductor whose one end is attracted to the magnetic force layer. a substrate having flexibility; a resistor formed on the substrate and made of a material containing at least one of chromium and nickel ; and an electrode electrically connected to the resistor , the electrode a strain gauge with a magnetic force layer ; and
a conductor whose one end is attracted to the magnetic force layer,
An electronic component having an electrode with a magnetic force layer is mounted on the base material,
A sensor module in which the other end of the conductor is attracted to the magnetic force layer of the electronic component . an electrode having a magnetic force layer formed on a substrate;
a conductor whose one end is attracted to the magnetic force layer ,
The connection structure , wherein the magnetic force layer contains Ni, a Ni-based alloy, an Fe-based alloy, or a Co-based alloy .

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