JPWO2019175933A1 - High frequency equipment - Google Patents

Abstract

A high-frequency device of the present invention has a dielectric substrate that propagates a high-frequency signal and has a mounting surface on one side, a mounting component mounted on the mounting surface of the dielectric substrate, and an upper lid portion facing the mounting surface. And a lid member that covers the surface and the mounted component and has conductivity. The lid member further has a convex portion that faces the mounting surface and that projects from the surface of the upper lid portion toward the mounting surface. The convex portion has a facing surface that faces the mounting surface. The mounting component has a top surface on the side opposite to the side mounted on the mounting surface. The top surface of the mounted component faces the facing surface of the convex portion. The area of the portion where the facing surface faces the top surface is smaller than the area of the top surface.

Description

  The present invention relates to a high-frequency device that mainly handles high-frequency signals in the microwave band and millimeter wave band.

  Mounting components that mainly handle high-frequency signals in the microwave band and millimeter-wave band are shielded together with other electronic components and handled as high-frequency devices. The mounted component is made of a semiconductor and has a high frequency circuit. Conventional high-frequency devices have an electromagnetic shield that covers the periphery of the mounted components with a conductive member in order to prevent electromagnetic waves from being leaked from the mounted components to the outside of the high-frequency device and from being interfered with by electromagnetic waves from the high-frequency device to the mounted components. (For example, see Patent Document 1).

  In a high frequency device having an electromagnetic shield, a cavity resonance phenomenon occurs depending on the size of the space inside the electromagnetic shield or the effective dielectric constant of the space. When the cavity resonance phenomenon occurs, the characteristics of the high-frequency circuit arranged in the electromagnetic shield may deteriorate in a high frequency band equal to or higher than the frequency at which the cavity resonance occurs. Therefore, in the conventional high-frequency device described in Patent Document 1, a radio wave absorber that absorbs unnecessary electromagnetic waves is provided in the electromagnetic shield in order to suppress the influence of cavity resonance.

  Here, when the electromagnetic wave absorber is arranged above or below the mounting component, the mounting component and the electromagnetic wave absorber formed of a material having a high dielectric constant are sandwiched between the upper and lower sides of the metal. The structure in which the mounting component and the electromagnetic wave absorber are sandwiched between metals operates as an open type resonator in a high frequency band. Therefore, the isolation between the high frequency circuit terminals deteriorates.

JP, 2002-314286, A

  In the conventional high-frequency device described in Patent Document 1, the electromagnetic wave absorber is arranged at a position displaced from the position facing the mounted component, and the upper and lower sides of the electromagnetic wave absorber are prevented from being sandwiched by metal. However, the mounted component is sandwiched between the top and bottom by metal. Therefore, the conventional high frequency device operates as an open type resonator in a high frequency band, and has a problem that isolation between high frequency circuit terminals is deteriorated.

  The present invention has been made to solve the above problems, and an object of the present invention is to obtain a high frequency device capable of suppressing deterioration of isolation between high frequency circuit terminals in an operating frequency band.

  A high-frequency device of the present invention has a dielectric substrate that propagates a high-frequency signal and has a mounting surface on one side, a mounting component mounted on the mounting surface of the dielectric substrate, and an upper lid portion facing the mounting surface. And a lid member that covers the surface and the mounted component and has conductivity. The lid member further has a convex portion that faces the mounting surface and that projects from the surface of the upper lid portion toward the mounting surface. The convex portion has a facing surface that faces the mounting surface. The mounting component has a top surface on the side opposite to the side mounted on the mounting surface. The top surface of the mounted component faces the facing surface of the convex portion. The area of the portion where the facing surface faces the top surface is smaller than the area of the top surface.

  This high-frequency device has a structure in which the top surface of the mounted component and the opposing surface of the convex portion of the lid member face each other, and the area of the portion where the opposing surface of the convex portion faces the top surface is the area of the top surface. By making it smaller, the frequency at which the open resonance occurs can be increased. As a result, it is possible to obtain a high-frequency device capable of suppressing deterioration of isolation between high-frequency circuit terminals in the operating frequency band.

FIG. 3 is a top view showing the high frequency device according to the first embodiment of the present invention. It is a front sectional view which followed the AA line of FIG. FIG. 3 is a side sectional view taken along the line BB of FIG. 2. It is a plane sectional view which followed the CC line of FIG. It is a front sectional view showing a high-frequency device according to Embodiment 2 of the present invention. FIG. 6 is a side sectional view taken along the line BB of FIG. 5. It is a plane sectional view which followed the CC line of FIG. It is a front sectional view showing a high frequency device of a comparative example. FIG. 9 is a side sectional view taken along the line BB of FIG. 8. FIG. 9 is a plan sectional view taken along the line CC of FIG. 8. 9 is a graph showing a simulation result of a coupling amount between terminals of a semiconductor chip in the high frequency device of the second embodiment and the high frequency device of the comparative example. FIG. 9 is a front sectional view showing a high-frequency device according to Embodiment 3 of the present invention. It is a side surface sectional view which followed the BB line of FIG. It is a plane sectional view which followed the CC line of FIG. It is a front sectional view showing a high-frequency device according to Embodiment 4 of the present invention. FIG. 16 is a side sectional view taken along the line BB of FIG. 15. It is a plane sectional view which followed the CC line of FIG. It is a front sectional view showing a high-frequency device according to Embodiment 5 of the present invention. It is a side surface sectional view which followed the BB line of FIG. FIG. 19 is a plan sectional view taken along the line CC of FIG. 18. FIG. 13 is a front sectional view showing a high-frequency device according to Embodiment 6 of the present invention. It is a side surface sectional view which followed the BB line of FIG. FIG. 22 is a plan sectional view taken along the line CC of FIG. 21. FIG. 13 is a front sectional view showing a high-frequency device according to Embodiment 7 of the present invention. It is a side surface sectional view which followed the BB line of FIG. FIG. 25 is a plan sectional view taken along the line CC of FIG. 24. FIG. 14 is a front sectional view showing a high-frequency device according to Embodiment 8 of the present invention. FIG. 28 is a side sectional view taken along the line BB of FIG. 27. FIG. 28 is a plan sectional view taken along the line CC of FIG. 27. FIG. 16 is a front sectional view showing a high-frequency device according to Embodiment 9 of the present invention. It is a side surface sectional view which followed the BB line of FIG. It is a plane sectional view which followed the CC line of FIG. FIG. 16 is a front sectional view showing a high-frequency device according to embodiment 10 of the present invention. It is a side surface sectional view which followed the BB line of FIG. FIG. 34 is a plan sectional view taken along the line CC of FIG. 33. It is a front sectional view showing a high-frequency device according to an eleventh embodiment of the present invention. FIG. 37 is a side sectional view taken along the line BB of FIG. 36. FIG. 37 is a plan sectional view taken along the line CC of FIG. 36. FIG. 13 is a front sectional view showing a high-frequency device according to Embodiment 12 of the present invention. It is a side surface sectional view which followed the BB line of FIG. FIG. 40 is a cross-sectional plan view taken along the line CC of FIG. 39. 13 is a top view showing a high frequency device according to a thirteenth embodiment of the present invention. FIG. 43 is a front cross-sectional view taken along the line DD of FIG. 42. It is a side surface sectional view which followed the EE line of FIG. FIG. 44 is a plan sectional view taken along the line FF of FIG. 43. It is a plane sectional view which followed the GG line of Drawing 43. FIG. 44 is a plan sectional view taken along the line HH of FIG. 43. 14 is a front sectional view showing a high frequency device according to a fourteenth embodiment of the present invention. It is a side surface sectional view which followed the EE line of FIG. It is a plane sectional view which followed the FF line of FIG. It is a plane sectional view which followed the GG line of FIG. It is a plane sectional view which followed the HH line of FIG. It is a figure which shows the modification of the cross-sectional shape of an opposing surface. It is a figure which shows the modification of the cross-sectional shape of an opposing surface.

  Embodiments of the present invention will be described below with reference to the drawings. In each drawing, the same or corresponding parts are denoted by the same reference numerals, and duplicate description will be omitted.

Embodiment 1.
1 is a top view showing a high frequency device according to a first embodiment of the present invention. FIG. 2 is a front sectional view taken along the line AA of FIG. FIG. 3 is a side sectional view taken along the line BB of FIG. FIG. 4 is a plan sectional view taken along the line CC of FIG.

  The shape of high-frequency device 10 according to Embodiment 1 of the present invention is a rectangular parallelepiped shape. The high frequency device 10 includes a dielectric substrate 100, a mounting component 200, a lid member 300, and a radio wave absorber 400.

  The dielectric substrate 100 is a substrate made of a dielectric material. The dielectric substrate 100 propagates a high frequency signal. The dielectric substrate 100 has a mounting surface 120 on one surface. The dielectric substrate 100 has a metal ground conductor in the substrate.

  The mounting component 200 is mounted on the mounting surface 120 of the dielectric substrate 100. The mounting component 200 is mounted in the center of the mounting surface 120. The mounting component 200 is a semiconductor chip made of a Si-based, GaAs-based, GaN-based, or InP-based semiconductor material. A high-frequency circuit is formed on the mounting component 200. The mounting component 200 has a top surface 220 on the side opposite to the side mounted on the mounting surface 120. When the mounting component 200 is a semiconductor chip having a single function, the high frequency device 10 can be referred to as a high frequency package. When the mounting component 200 incorporates all the circuits and components required for the high frequency system, the high frequency device 10 can be referred to as a high frequency module.

  The lid member 300 has a lid frame portion 320 and an upper lid portion 330. The lid frame portion 320 is a frame-shaped member having a quadrangular cross section. The lid member 300 further includes a radio wave absorber placement portion 390. The radio wave absorber placement portion 390 projects from the surface of the upper lid portion 330 facing the mounting surface 120 toward the mounting surface 120. The shape of the radio wave absorber placement portion 390 is a frame-like shape having a rectangular cross section. The upper lid portion 330 closes one opening of the lid frame portion 320. At that time, the radio wave absorber placement section 390 is directed to the inside of the opening of the lid frame section 320. The dielectric substrate 100 closes the other opening of the lid frame portion 320. At that time, the mounting surface 120 is directed to the inside of the opening of the lid frame portion 320. As a result, the lid member 300 covers the mounting surface 120 and the mounting component 200. Further, the upper lid portion 330 faces the mounting surface 120. The lid member 300 has conductivity. For example, the lid member 300 is made of metal.

  The lid member 300 further includes a metal protrusion 340. The convex portion 340 projects from the surface of the upper lid portion 330 facing the mounting surface 120 toward the mounting surface 120. The convex portion 340 is arranged at the center of the upper lid portion 330. The shape of the convex portion 340 is a rectangular parallelepiped shape. The convex portion 340 has a rectangular facing surface 360 at the tip. The facing surface 360 faces the mounting surface 120. The top surface 220 of the mounting component 200 faces the facing surface 360 of the convex portion 340.

  The radio wave absorber 400 is arranged in the radio wave absorber arrangement section 390. The radio wave absorber 400 is arranged at a position along the inner surface of the lid frame portion 320 in FIG. 2. That is, the electromagnetic wave absorber 400 is arranged in the space 700 surrounded by the mounting surface 120 and the lid member 300. Further, the radio wave absorber 400 is arranged at a position displaced from the position facing the top surface 220 of the mounting component 200. The shape of the radio wave absorber 400 is a rectangular parallelepiped shape.

  Next, the operation of the high frequency device 10 will be described with reference to FIG. The lid member 300 is connected to the ground conductor of the dielectric substrate 100. Therefore, the lid member 300 serves as an electromagnetic shield that prevents leakage of electromagnetic waves to the outside of the high frequency device 10 and interference of electromagnetic waves from the outside of the high frequency device 10.

  By covering the electromagnetic wave absorber 400 together with the mounting component 200 with the conductive lid member 300 and applying an electromagnetic shield, it is possible to suppress the occurrence of cavity resonance. In this case, since the radio wave absorber placement section 390 projects from the surface of the upper lid section 330 toward the mounting surface 120, the radio wave absorber 400 can be brought close to the mounting component 200. As a result, the radio wave absorption efficiency of the radio wave absorber 400 can be increased as compared with the case where the radio wave absorber 400 is located at a distant position.

  Since the electromagnetic wave absorber 400 is arranged at a position displaced from the position facing the mounting component 200, the operation of the open-type resonator due to the electromagnetic wave absorber 400 is suppressed. However, the upper and lower sides of the mounting component 200 having a high dielectric constant are sandwiched by metal. Therefore, the configuration in which the upper and lower sides of the mounting component 200 are sandwiched by metal operates as an open type resonator in a high frequency band, and isolation between high frequency circuit terminals deteriorates. At this time, the top surface 220 of the mounting component 200 is made to face the facing surface 360 of the convex portion 340 of the lid member 300, and the area of the portion where the facing surface 360 faces the top surface 220 is smaller than the area of the top surface 220. By doing so, the frequency at which the open resonance occurs can be increased. Therefore, the high frequency device 10 according to the first embodiment can suppress deterioration of isolation between the high frequency circuit terminals in the operating frequency band.

  The high-frequency device according to the first embodiment can suppress deterioration of isolation between high-frequency circuit terminals in the operating frequency band.

  The radio wave absorber is arranged in a space surrounded by the mounting surface and the lid member. This can suppress the occurrence of cavity resonance.

  The radio wave absorber is arranged at a position displaced from the position facing the top surface of the mounted component. As a result, the operation of the open resonator caused by the electromagnetic wave absorber is suppressed.

  The radio wave absorber is arranged in the radio wave absorber arrangement portion. Thereby, the radio wave absorption efficiency of the radio wave absorber can be improved.

Embodiment 2.
Next, the high frequency device according to the second embodiment will be described with reference to FIGS. In the second embodiment, the convex portion of the lid member is connected to the mounting component. FIG. 5 is a front sectional view showing a high frequency device according to a second embodiment of the present invention. FIG. 6 is a side sectional view taken along the line BB of FIG. FIG. 7 is a plan sectional view taken along the line CC of FIG.

  The high frequency device 11 according to the second embodiment of the present invention includes a dielectric substrate 100, a mounting component 200, a lid member 301, and a radio wave absorber 400. The lid member 301 has a lid frame portion 320, an upper lid portion 330, a convex portion 341, and a radio wave absorber placement portion 390. The convex portion 341 has a facing surface 361 at the tip. The shape of the facing surface 361 is a rectangular shape. One side of the facing surface 361 has a length a, and the other side of the facing surface 361 has a length b. The top surface 220 of the mounting component 200 is connected to the facing surface 361 of the convex portion 341. That is, the top surface 220 of the mounting component 200 faces the facing surface 361 of the convex portion 341. The radio wave absorber 400 is arranged in the radio wave absorber arrangement section 390.

  In the high frequency device 11, the heat generated in the mounting component 200 can be released not only through the path to the dielectric substrate 100 but also through the path from the top surface 220 to the lid member 301 via the convex portion 341. Therefore, the high frequency device 11 according to the second embodiment has a good heat discharging performance with respect to the heat generated in the mounting component 200.

  Next, a comparison between the high frequency device 11 according to the second embodiment and the high frequency device 41 according to the comparative example of the second embodiment will be described with reference to FIGS. FIG. 8 is a front sectional view showing a high frequency device of a comparative example. 9 is a side sectional view taken along the line BB of FIG. FIG. 10 is a plan sectional view taken along the line CC of FIG. The high frequency device 41 of the comparative example includes a dielectric substrate 100, a mounting component 200, a lid member 319, and a radio wave absorber 400. The lid member 319 has a lid frame portion 329 and an upper lid portion 339. No protrusion is provided on the upper lid 339. That is, the lid member 319 does not have a convex portion. The upper lid portion 339 is connected to the mounting component 200.

  FIG. 11 is a graph showing the simulation results of the inter-terminal coupling amount of the semiconductor chips in the high frequency device 11 of the second embodiment and the high frequency device 41 of the comparative example. The horizontal axis is frequency. The vertical axis represents the inter-terminal coupling amount of the semiconductor chip of the mounting component 200. A solid line 50 is a simulation result in the high frequency device 11 according to the second embodiment. A broken line 51 is a simulation result in the high frequency device 41 of the comparative example.

  In a semiconductor chip having a large gain of a high-frequency high-power amplifier (HPA), that is, a large amount of power amplification, when the amount of coupling between terminals of the semiconductor chip increases, oscillation occurs due to feedback gain and the high-frequency characteristics deteriorate. . Therefore, the amount of coupling between the terminals of the semiconductor chip needs to be suppressed to be equal to or less than the amount of isolation in which the surplus is added to the gain of the semiconductor chip. In FIG. 11, a small amount of coupling between terminals on the vertical axis indicates that deterioration of isolation can be suppressed.

  According to FIG. 11, in the frequency band of 33 GHz or less, the solid line 50 has a smaller amount of coupling between terminals of the semiconductor chip than the broken line 51. That is, the high frequency device 11 of the second embodiment can suppress the deterioration of isolation more than the high frequency device 41 of the comparative example. In order to shift the frequency at which open resonance occurs in the high frequency device 11 to the high frequency band side, the convex portion 341 is provided on the upper lid portion 330, and the area of the facing surface 361 at the tip of the convex portion 341 is adjusted to be small. Due to that.

In a semiconductor chip provided in a high frequency device, metal is arranged above and below the semiconductor chip. By sandwiching the semiconductor chip between these metals, an open resonance is generated in the high frequency device, and the TM wave is excited. The frequency f _mn at which the TM wave is excited can be expressed by the following equation (1).




In addition, each variable is as follows. m and n are mode orders and are integers of 0 or more (however, excluding m = n = 0). ε _er is the effective relative permittivity of the space sandwiched by the metals. μ _er is the effective relative permeability of the space sandwiched by the metals. c is the speed of light. a and b are the respective lengths of the edges in the plane direction in the space sandwiched by the metals. In the second embodiment, the length a and the length b are the lengths of the sides of the facing surface 361.

According to the equation (1), it is understood that the frequency f _{mn at} which the TM wave is excited can be adjusted by adjusting the length a and the length b. That is, the frequency f _{mn at} which the TM wave is excited can be adjusted by adjusting the lengths a and b of both sides of the facing surface 361 of the convex portion 341 of the lid member 301.

According to the equation (1), when the order mode m is not 0, the frequency f _mn at which the TM wave is excited is shifted to the high frequency band side by reducing the length a corresponding to the order mode m. Further, when the order mode n is not 0, the frequency f _mn at which the TM wave is excited is shifted to the high frequency band side by reducing the length b corresponding to the order mode n. Therefore, by providing the configuration in which the top surface 220 of the mounted component 200 and the facing surface 361 of the convex portion 341 face each other, unnecessary inter-terminal coupling of the mounted component 200 is suppressed in the operating frequency band, and the feedback gain is provided. It is possible to prevent deterioration of high frequency characteristics. Thereby, the high frequency device 11 can suppress deterioration of isolation.

  According to the high frequency device of the second embodiment, deterioration of isolation between high frequency circuit terminals can be suppressed in the operating frequency band. Further, according to the high frequency device of the second embodiment, good heat exhaust performance can be obtained. Therefore, it is possible to obtain a high-frequency device having good high-frequency characteristics in the operating frequency band and having both high-frequency characteristics and heat exhaust performance.

Embodiment 3.
Next, a high frequency device according to the third embodiment will be described with reference to FIGS. In the second embodiment, the convex portion is directly connected to the mounted component, but in the third embodiment, the heat conductive material is provided between the convex portion and the mounted component. 12 is a front sectional view showing a high frequency device according to a third embodiment of the present invention. FIG. 13 is a side sectional view taken along the line BB of FIG. FIG. 14 is a plan sectional view taken along the line CC of FIG.

  The high frequency device 12 according to the third embodiment of the present invention includes a dielectric substrate 100, a mounting component 200, a lid member 302, and a radio wave absorber 400. The lid member 302 includes a lid frame portion 320, an upper lid portion 330, a convex portion 342, and a radio wave absorber placement portion 390. The convex portion 342 has a facing surface 362 at the tip. A heat conductive material 600 is provided between the facing surface 362 of the convex portion 342 and the top surface 220 of the mounting component 200. That is, the top surface 220 of the mounting component 200 is connected to the facing surface 362 of the convex portion 342 via the heat conductive material 600. The thermal conductive material 600 is made of, for example, ceramics having high thermal conductivity.

  The heat generated in the mounted component 200 is efficiently transmitted to the lid member 302 via the heat conductive material 600. In addition, when the length of the convex portion 342 is short and the top surface 220 and the facing surface 362 are not connected, the top surface 220 and the facing surface 362 can be connected by selecting the thickness of the heat conductive material 600. it can. Therefore, the influence of the manufacturing error of the convex portion 342 can be complemented. Thereby, the degree of freedom in designing the high frequency device 12 can be improved.

  According to the high-frequency device according to the third embodiment, when the top surface is connected to the facing surface, the heat conducting material is interposed so that the heat discharging performance can be further improved. Further, according to the high frequency device of the third embodiment, the degree of freedom in designing the high frequency device can be improved.

Fourth Embodiment
Next, a high frequency device according to the fourth embodiment will be described with reference to FIGS. In the fourth embodiment, the convex portion is provided at a position displaced from the center of the upper lid portion. FIG. 15 is a front sectional view showing a high frequency device according to a fourth embodiment of the present invention. 16 is a side sectional view taken along the line BB of FIG. FIG. 17 is a plan sectional view taken along the line CC of FIG.

  The high frequency device 13 according to the fourth embodiment of the present invention includes a dielectric substrate 100, a mounting component 200, a lid member 303, and a radio wave absorber 400. The lid member 303 includes a lid frame portion 320, an upper lid portion 331, a convex portion 343, and a radio wave absorber placement portion 390. The convex portion 343 is provided at a position displaced from the center of the upper lid portion 331. The convex portion 343 has a facing surface 363 at the tip. The facing surface 363 is arranged at a position displaced from directly above the mounting component 200. The top surface 220 of the mounting component 200 faces the facing surface 363 of the convex portion 343.

  Even when the facing surface 363 of the convex portion 343 is arranged at a position displaced from directly above the mounting component 200, it is possible to control the frequency at which open resonance occurs. When the facing surface 363 is displaced from directly above the mounting component 200, as shown in FIG. 17, the region 90 facing the top surface 220 of the mounting component 200 has a length d on one side and a length e on the other side. It has a rectangular shape. The length e of one side of the region 90 is the same as the length of one side of the facing surface 363. However, the length d of the other side of the region 90 is about half the length of the other side of the facing surface 363.

According to the equation (1), when the length a or the length b is reduced, the frequency f _mn at which the TM wave is excited increases. For example, when m = n = 1 and one length a becomes half the length d, the frequency f _mn at which the TM wave is excited when the facing surface 363 is displaced from directly above the mounting component 200 is f _mn. Is about 11% higher than the frequency f _mn at which the TM wave is excited when the facing surface is directly above the mounted component. Therefore, the high frequency device 13 can suppress deterioration of isolation between the high frequency circuit terminals in the operating frequency band. Further, even when the facing surface 363 is displaced from directly above the mounting component 200, deterioration of isolation can be suppressed. Therefore, the high frequency device 13 can suppress the influence of the manufacturing error related to the positional deviation of the convex portion 343, and can increase the degree of freedom in designing the high frequency device.

  The high frequency device according to the fourth embodiment can suppress deterioration of isolation between high frequency circuit terminals in the operating frequency band. Further, according to the high frequency device of the fourth embodiment, the degree of freedom in designing the high frequency device can be increased.

Embodiment 5.
Next, a high frequency device according to the fifth embodiment will be described with reference to FIGS. In the fifth embodiment, the upper lid is provided with two convex portions. 18 is a front sectional view showing a high frequency device according to a fifth embodiment of the present invention. 19 is a side sectional view taken along the line BB of FIG. 20 is a plan sectional view taken along the line CC of FIG.

  The high frequency device 14 according to the fifth embodiment of the present invention includes a dielectric substrate 100, a mounting component 200, a lid member 304, and a radio wave absorber 400. The lid member 304 includes a lid frame portion 320, an upper lid portion 330, two convex portions 344, and a radio wave absorber placement portion 390. The two convex portions 344 are provided on the upper lid portion 330. The two convex portions 344 face one mounting component 200. Each convex portion 344 has a facing surface 364 at the tip. The top surface 220 of the mounting component 200 is connected to each facing surface 364 of each protrusion 344. All of the two facing surfaces 364 face the top surface 220. Therefore, the sum of the areas of the two facing surfaces 364 facing the top surface 220 is equal to the sum of the areas of the two facing surfaces 364 and smaller than the area of the top surface 220.

  The heat generated by the mounted component 200 is released along the path from the mounted component 200 to the dielectric substrate 100, and also along the path leading from the top surface 220 to the lid member 304 via each convex portion 344. In that case, since the two protrusions 344 are provided, the heat of the mounted component 200 can be more efficiently exhausted as compared with the case where the number of the protrusions 344 is one. Further, in that case, since it is not necessary to increase the size of each convex portion 344, deterioration of isolation can be suppressed.

  According to the high frequency device of the fifth embodiment, heat can be more efficiently exhausted. Further, according to the high frequency device of the fifth embodiment, it is possible to further improve the heat dissipation performance without increasing the size of the convex portion. Therefore, it is possible to obtain a high-frequency device having good high-frequency characteristics in the operating frequency band and having both high-frequency characteristics and heat exhaustion performance.

  In addition, in the fifth embodiment, the top surface 220 of the mounting component 200 is directly connected to the respective facing surfaces 364 of the two convex portions 344, but between the top surface 220 and the respective facing surfaces 364. You may insert a heat conductive material, respectively.

Sixth Embodiment
Next, a high frequency device according to the sixth embodiment will be described with reference to FIGS. In the sixth embodiment, the convex portion is mainly formed by the dielectric portion. 21 is a front sectional view showing a high frequency device according to a sixth embodiment of the present invention. 22 is a side sectional view taken along the line BB of FIG. 23 is a plan sectional view taken along the line CC of FIG.

  The high frequency device 15 according to the sixth embodiment of the present invention includes a dielectric substrate 100, a mounting component 200, a lid member 305, and a radio wave absorber 400. The lid member 305 includes a lid frame portion 320, an upper lid portion 330, a convex portion 345, and a radio wave absorber placement portion 390. The convex portion 345 is attached to the surface of the upper lid portion 330 that faces the mounting surface 120. The convex portion 345 has a conductor portion 380 and a dielectric portion 381. The conductor portion 380 penetrates the dielectric portion 381. The shape of the dielectric part 381 is a rectangular parallelepiped shape having a through hole. The conductor portion 380 has a cylindrical shape. The conductor portion 380 is attached to the center of the upper lid portion 330. The dielectric portion 381 of the convex portion 345 has a facing surface 365 at the tip. The top surface 220 of the mounting component 200 faces the facing surface 365 of the convex portion 345.

The convex portion 345 is not produced by cutting out from the upper lid portion 330, but is produced separately from the lid frame portion 320 and the upper lid portion 330. Therefore, the processing accuracy of the convex portion 345 can be improved. Further, the convex portion 345 can be finely processed. Therefore, the open type resonance is generated, and the frequency f _{mn at} which the TM wave is excited can be further increased. On the other hand, since the dielectric part 381 is provided, ε _er in the equation (1) increases, so that the frequency f _mn at which the TM wave is excited may decrease. Therefore, it is necessary to finely process the convex portion 345 to compensate for the decrease in the frequency f _mn at which the TM wave is excited due to the provision of the dielectric portion 381.

  Further, as the convex portion 345, an existing component used for the dielectric substrate 100 can be applied. Therefore, the manufacturing cost of the high frequency device 15 can be reduced.

  According to the high frequency device of the sixth embodiment, deterioration of isolation between high frequency circuit terminals can be suppressed in the operating frequency band. Further, according to the high frequency device of the sixth embodiment, the manufacturing cost of the high frequency device can be reduced.

It is also possible to form the convex portion 345 with only the conductor portion. In this case, the frequency f _mn at which the TM wave is excited does not decrease due to the presence of the dielectric part 381. However, since the existing parts cannot be applied, the manufacturing cost of the high frequency device may increase.

Embodiment 7.
Next, a high frequency device according to the seventh embodiment will be described with reference to FIGS. In the seventh embodiment, the shape of the radio wave absorber is a quadrangular shape provided with an opening. 24 is a front sectional view showing a high frequency device according to a seventh embodiment of the present invention. 25 is a side sectional view taken along the line BB of FIG. FIG. 26 is a plan sectional view taken along the line CC of FIG.

  The high frequency device 16 according to the seventh embodiment of the present invention includes a dielectric substrate 100, a mounting component 200, a lid member 300, and a radio wave absorber 401. The lid member 300 includes a lid frame portion 320, an upper lid portion 330, a convex portion 340, and a radio wave absorber placement portion 390. The convex portion 340 has a facing surface 360 at the tip. The top surface 220 of the mounting component 200 faces the facing surface 360 of the convex portion 340.

  The shape of the radio wave absorber 401 is a sheet shape. The radio wave absorber 401 is arranged in the radio wave absorber arrangement portion 390 so as to face the mounting surface 120. The outer periphery of the radio wave absorber 401 is arranged along the inner surface of the lid frame portion 320. The radio wave absorber 401 is provided with a rectangular opening 410 at a position facing the top surface 220 of the mounting component 200. Therefore, the shape of the radio wave absorber 401 is a quadrangular frame shape along the inner surface of the lid frame portion 320. The radio wave absorber 401 may be made of a paste-like substance applied to the upper lid portion 330.

When the opening 410 is provided in the radio wave absorber 401, the radio wave absorber 401 does not have a portion facing the mounting component 200. Therefore, the radio wave absorber 401 does not affect the frequency f _mn at which the TM wave is excited. In this way, by making the outer periphery of the radio wave absorber 401 along the inner surface of the lid frame portion 320, the positional displacement of the radio wave absorber 401 in the high frequency device 16 is unlikely to occur. Thereby, the assembling accuracy of the high frequency device 16 can be improved.

  According to the high frequency device of the seventh embodiment, it is possible to improve the assembly accuracy of the high frequency device.

Eighth embodiment.
Next, a high frequency device according to the eighth embodiment will be described with reference to FIGS. 27 to 29. In the eighth embodiment, two radio wave absorbers are formed. 27 is a front sectional view showing a high frequency device according to an eighth embodiment of the present invention. 28 is a side sectional view taken along the line BB of FIG. FIG. 29 is a plan sectional view taken along the line CC of FIG.

  The high frequency device 17 according to the eighth embodiment of the present invention includes a dielectric substrate 101, a mounting component 200, a lid member 307, and two radio wave absorbers 402. The lid member 307 includes a lid frame portion 321, an upper lid portion 332, a convex portion 347, and two radio wave absorber placement portions 391. The convex portion 347 has a facing surface 367 at the tip. The top surface 220 of the mounting component 200 faces the facing surface 360 of the convex portion 340.

  The two radio wave absorber placement sections 391 are respectively placed at positions along the facing inner wall surfaces of the lid frame section 321 in FIG. 27. Each radio wave absorber 402 is arranged in each radio wave absorber arrangement section 391. Therefore, each radio wave absorber 402 is arranged at a position displaced from the position facing the top surface 220 of the mounting component 200. The shape of each radio wave absorber 402 is a rectangular parallelepiped shape. Each radio wave absorber 402 faces the mounting surface 121.

  By arranging the two radio wave absorbers 402 separately in the two radio wave absorber placement portions 391, the total volume of each of the radio wave absorbers 402 is maintained at the same level as when the volume of the radio wave absorber is one. However, the size of each radio wave absorber 402 can be reduced. Therefore, the space inside the lid member 307 can be efficiently used. Thereby, the high frequency device 17 can be downsized.

  According to the high frequency device of the eighth embodiment, the high frequency device can be downsized.

  It should be noted that, as in the seventh embodiment, by forming the radio wave absorber into a frame shape along the inner surface of the lid frame portion 321, the high frequency device can be further downsized.

Ninth Embodiment
Next, a high frequency device according to the ninth embodiment will be described with reference to FIGS. 30 to 32. In the ninth embodiment, the lid member is made low in height. 30 is a front sectional view showing a high frequency device according to a ninth embodiment of the present invention. 31 is a side sectional view taken along the line BB of FIG. 32 is a cross-sectional plan view taken along the line CC of FIG.

  The high frequency device 18 according to the ninth embodiment of the present invention includes a dielectric substrate 100, a mounting component 200, a lid member 308, and a radio wave absorber 403. The lid member 308 includes a lid frame portion 322, an upper lid portion 333, a convex portion 348, and a radio wave absorber placement portion 390. The convex portion 348 has a facing surface 368 at the tip. The top surface 220 of the mounting component 200 faces the facing surface 368 of the convex portion 348.

  A gap 500 is formed between the dielectric substrate 100 and the upper lid 333. The radio wave absorber 403 is arranged in a portion of the gap 500 along one inner wall surface of the lid frame portion 322 in FIG. That is, the radio wave absorber 403 is fitted in the gap 500 between the dielectric substrate 100 and the upper lid portion 333. The thickness of the radio wave absorber 403 is equal to the height of the gap 500.

  The amount of radio wave absorption of the radio wave absorber is related to the thickness of the radio wave absorber. That is, when the electromagnetic wave absorber is thick, the amount of electromagnetic wave absorption increases. Further, the amount of radio wave absorption of the radio wave absorber is related to the magnitude of the electric flux density and the magnetic flux density incident on the surface of the radio wave absorber. That is, when the electric flux density and magnetic flux density incident on the surface of the radio wave absorber are large, the radio wave absorption amount increases.

  In the ninth embodiment, the width of the gap 500 between the dielectric substrate 100 and the upper lid portion 333 is narrowed. Therefore, the electric flux density and magnetic flux density of the electromagnetic field relating to the cavity resonance generated in the high frequency device 18 increase in the gap 500. Therefore, the amount of radio waves absorbed by the radio wave absorber 403 increases. As a result, even if the electromagnetic wave absorber is thin, it is possible to obtain an amount of electromagnetic wave absorption that is greater than when the thin electromagnetic wave absorber is arranged in a wide space. Therefore, the amount of electromagnetic waves absorbed by the electromagnetic wave absorber 403 can be made approximately the same as the amount of electromagnetic waves absorbed when the electromagnetic wave absorber is not fitted in the gap. Further, by disposing the radio wave absorber 403 in the gap 500, the height of the high frequency device 18 can be reduced. That is, the high frequency device 18 can have a low profile.

  According to the high frequency device of the ninth embodiment, the high frequency device can have a low profile.

  The radio wave absorber 403 may be provided on the entire circumference of the gap 500 between the dielectric substrate 100 and the upper lid 333. In this case, since the amount of electromagnetic waves absorbed by the electromagnetic wave absorber increases, it is possible to further reduce the thickness of the electromagnetic wave absorber.

Embodiment 10.
Next, a high frequency device according to the tenth embodiment will be described with reference to FIGS. 33 to 35. In the tenth embodiment, the mounted component is a component in which a semiconductor chip is resin-molded. 33 is a front sectional view showing a high frequency device according to a tenth embodiment of the present invention. 34 is a side sectional view taken along the line BB of FIG. FIG. 35 is a plan sectional view taken along the line CC of FIG.

  A high frequency device 19 according to Embodiment 10 of the present invention includes a dielectric substrate 100, a mounting component 201, a lid member 309, and a radio wave absorber 400. The mounting component 201 has a semiconductor chip 240 and a mold resin 241. The semiconductor chip 240 is sealed with a mold resin 241. The mounting component 201 is mounted on the mounting surface 120 of the dielectric substrate 100. The mounting component 201 has a top surface 221 on the side opposite to the side mounted on the mounting surface 120. The lid member 309 includes a lid frame portion 320, an upper lid portion 330, a convex portion 349, and a radio wave absorber placement portion 390. The convex portion 349 has a facing surface 369 at the tip. The top surface 221 of the mounting component 201 faces the facing surface 369 of the convex portion 349.

  When the radio wave absorber absorbs high frequency energy, the radio wave absorber may release outgas. In this case, the outgas emitted from the radio wave absorber adheres to the surface of the semiconductor chip and deteriorates the characteristics of the semiconductor chip.

  In the tenth embodiment, the semiconductor chip 240 is sealed with the mold resin 241. Therefore, it is possible to prevent the outgas emitted from the radio wave absorber 400 from adhering to the surface of the semiconductor chip 240. Therefore, the deterioration of the semiconductor chip 240 can be prevented. Thereby, the reliability of the high frequency device 19 can be improved.

  According to the high frequency device of the tenth embodiment, the reliability of the high frequency device can be improved.

Eleventh Embodiment
Next, a high frequency device according to the eleventh embodiment will be described with reference to FIGS. 36 to 38. In the eleventh embodiment, the lid member is connected to the resin-molded mounting component. 36 is a front sectional view showing a high-frequency device according to an eleventh embodiment of the present invention. FIG. 37 is a side sectional view taken along the line BB of FIG. 36. 38 is a plan sectional view taken along the line CC of FIG.

  A high frequency device 20 according to Embodiment 11 of the present invention includes a dielectric substrate 100, a mounting component 201, a lid member 310, and a radio wave absorber 400. The lid member 310 has a lid frame portion 320, an upper lid portion 330, a convex portion 350, and a radio wave absorber placement portion 390. The top surface 221 of the mounting component 201 is connected to the facing surface 370 of the convex portion 350. That is, the top surface 221 of the mounting component 201 faces the facing surface 370 of the convex portion 350. The area of the portion where the facing surface 370 faces the top surface 221 is smaller than the area of the top surface 221.

  The heat generated in the mounting component 201 is dissipated in the route from the mounting component 201 to the dielectric substrate 100, and is also dissipated in the route leading from the top surface 221 to the lid member 310 via the convex portion 350. Therefore, the heat of the mounted component 201 can be exhausted more efficiently.

  Further, since the semiconductor chip 240 is sealed with the mold resin 241, it is possible to prevent the semiconductor chip 240 from being deteriorated by the outgas generated from the radio wave absorber 400. Therefore, the reliability of the high frequency device 20 can be improved.

  According to the high frequency device of the eleventh embodiment, it is possible to improve the reliability of the high frequency device by having good heat discharging performance. Further, according to the high frequency device of the eleventh embodiment, good heat dissipation performance can be obtained. This makes it possible to obtain a high-frequency device having good high-frequency characteristics in the operating frequency band and having both high-frequency characteristics and heat exhaust performance.

  The mounting component 201 may be formed by encapsulating a plurality of semiconductor chips together with a molding resin.

Twelfth Embodiment
Next, a high frequency device according to the twelfth embodiment will be described with reference to FIGS. 39 to 41. In the twelfth embodiment, a heat conductive material is provided between the convex portion and the mounted component. 39 is a front sectional view showing a high frequency device according to a twelfth embodiment of the present invention. 40 is a side sectional view taken along the line BB of FIG. 39. 41 is a plan sectional view taken along the line CC of FIG.

  A high frequency device 21 according to a twelfth embodiment of the present invention includes a dielectric substrate 100, a mounting component 201, a lid member 311, and a radio wave absorber 400. The lid member 311 has a lid frame portion 320, an upper lid portion 330, a convex portion 351, and a radio wave absorber placement portion 390. The top surface 221 of the mounting component 201 is connected to the facing surface 371 of the convex portion 351 via the heat conductive material 600.

  The heat generated in the mounting component 201 is dissipated in the route from the mounting component 201 to the dielectric substrate 100, and is also dissipated in the route leading from the top surface 221 to the lid member 311 via the heat conductive material 600 and the convex portion 351. Therefore, the heat of the mounted component 201 can be exhausted more efficiently.

  Further, the semiconductor chip 240 is sealed with the mold resin 241. Therefore, it is possible to prevent deterioration of the semiconductor chip 240 due to outgas generated from the radio wave absorber 400. Therefore, the reliability of the high frequency device 21 can be improved.

  According to the high frequency device of the twelfth embodiment, it is possible to further improve the heat dissipation performance and enhance the reliability of the high frequency device. Further, according to the high frequency device of the twelfth embodiment, it is possible to further improve the heat dissipation performance. Therefore, it is possible to obtain a high-frequency device having good high-frequency characteristics in the operating frequency band and having both high-frequency characteristics and heat exhaustion performance.

The relative permittivity of the mold resin 241 and the relative permittivity of the heat conductive material 600 can be lower than the relative permittivity of the semiconductor chip 240, respectively. In this case, when the mounted component 201 and the heat conductive material 600 sandwiched between the metals are viewed as one body, the effective relative permittivity ε _er of the member as one body is lowered. Therefore, the effective relative permittivity ε _er in the equation (1) can be reduced, and the frequency f _{mn at} which the TM wave is excited can be further shifted to the higher frequency band side.

Thirteenth Embodiment
Next, a high frequency device according to the thirteenth embodiment will be described with reference to FIGS. 42 to 47. In the thirteenth embodiment, four mounting components are mounted in the high frequency device. 42 is a top view showing a high frequency device according to a thirteenth embodiment of the present invention. 43 is a front sectional view taken along the line DD of FIG. 42. 44 is a side sectional view taken along the line EE of FIG. 45 is a plan sectional view taken along the line FF of FIG. 46 is a plan sectional view taken along the line GG in FIG. 47 is a plan sectional view taken along the line HH of FIG.

  A high frequency device 30 according to a thirteenth embodiment of the present invention includes a dielectric substrate 110, mounting components 211 to 214, a lid member 312, and a radio wave absorber 404. The mounted components 211 to 214 are semiconductor chips, respectively. The mounting components 211 to 214 are mounted on the mounting surface 130 of the dielectric substrate 110. Each of the mounting components 211 to 214 has a top surface on the side opposite to the side mounted on the mounting surface 130. The mounting components 211 to 214 are arranged in a 2 × 2 grid pattern on the mounting surface 130. The mounting component 212 is arranged side by side with the mounting component 211 in the front sectional view of FIG. The mounting component 213 is arranged side by side with the mounting component 211 in the side sectional view of FIG. The mounting component 214 is arranged on the diagonal line of the dielectric substrate 110.

  The lid member 312 has a lid frame portion 323, an upper lid portion 334, four convex portions 352 to 355, and a radio wave absorber placement portion 392. Each of the convex portions 352 to 355 projects from the surface of the upper lid portion 334 facing the mounting surface 130 toward the mounting surface 130. Each of the convex portions 352 to 355 has a facing surface that faces the mounting surface 130. The top surfaces of the mounting components 211 to 214 face the facing surfaces of the protrusions 352 to 355, respectively. For example, the top surface 231 of the mounting component 211 faces the facing surface 372 of the convex portion 352. Moreover, the area of the portion where each facing surface of each convex portion 352 to 355 faces each top surface is smaller than the area of each top surface. For example, the area where the facing surface 372 of the convex portion 352 faces the top surface 231, that is, the area of the facing surface 372 is smaller than the area of the top surface 231. The radio wave absorber placement portion 392 projects from the surface of the upper lid portion 334 facing the mounting surface 130 toward the mounting surface 130. The radio wave absorber placement portion 392 is provided in a grid pattern.

  The shape of the radio wave absorber 404 is a sheet shape. The radio wave absorber 404 is arranged in the radio wave absorber arrangement portion 392 so as to face the mounting surface 130. The outer periphery of the radio wave absorber 404 is arranged along the inner surface of the lid frame portion 323. The radio wave absorber 404 is provided with quadrangular openings 411 to 414 at positions facing the top surfaces of the mounting components 211 to 214, respectively. Therefore, the radio wave absorber 404 has a lattice shape. The radio wave absorber 404 may be formed of a paste-like substance applied to the upper lid portion 334.

  The four mounting components 211 to 214 and the radio wave absorber 404 are electromagnetically shielded by being covered with a lid member 312 having conductivity. Therefore, the occurrence of cavity resonance can be suppressed. Since a part of each top surface of each mounting component 211 to 214 faces each of all the facing surfaces of each convex portion 352 to 355, the frequency at which the open resonance occurs can be controlled. As a result, it is possible to suppress deterioration of isolation between the high frequency circuit terminals in the operating frequency band.

Further, since the electromagnetic wave absorber 404 provided with the openings 411 to 414 is provided at positions facing the top surfaces of the mounting components 211 to 214, the frequency f _mn at which the TM wave is excited is affected. Never give. Further, since the outer circumference of the radio wave absorber 404 is formed along the inner surface of the lid frame portion 323, the radio wave absorber 404 in the high frequency device 30 is less likely to be displaced. Thereby, the assembling accuracy of the high frequency device 30 can be improved.

  According to the high frequency device of the thirteenth embodiment, it is possible to improve the assembly accuracy of the high frequency device.

Fourteenth Embodiment
Next, a high frequency device according to the fourteenth embodiment will be described with reference to FIGS. 48 to 52. In the fourteenth embodiment, each of the four mounted components is a component in which a semiconductor chip is resin-molded. 48 is a front sectional view showing a high frequency device according to a fourteenth embodiment of the present invention. FIG. 49 is a side sectional view taken along the line EE of FIG. 50 is a plan sectional view taken along the line FF of FIG. 51 is a plan sectional view taken along the line GG of FIG. 52 is a plan sectional view taken along line HH of FIG.

  A high frequency device 31 according to a fourteenth embodiment of the present invention includes a dielectric substrate 110, four mounting components 216 to 219, a lid member 312, and a radio wave absorber 404. The lid member 312 has a lid frame portion 323, an upper lid portion 334, four convex portions 352 to 355, and a radio wave absorber placement portion 392. Each of the mounting components 216 to 219 is a component in which the semiconductor chip 240 is sealed with the mold resin 241. The mounting components 216 to 219 are mounted on the mounting surface 130 of the dielectric substrate 110. The mounting components 216 to 219 are arranged on the mounting surface 130 in a 2 × 2 grid pattern. The top surfaces of the mounting components 216 to 219 face the facing surfaces of the protrusions 352 to 355 of the lid member 312, respectively. For example, the top surface 235 of the mounting component 216 faces the facing surface 372 of the convex portion 352.

Since the electromagnetic wave absorber 404 provided with the openings 411 to 414 is arranged at positions facing the top surfaces of the mounting components 216 to 219, the frequency f _mn at which the TM wave is excited is affected. There is no. Further, since the outer periphery of the radio wave absorber 404 is formed along the inner surface of the lid frame portion 323, the radio wave absorber 404 in the high frequency device 31 is less likely to be displaced. Thereby, the assembling accuracy of the high frequency device 31 can be improved.

  Further, each semiconductor chip 240 is sealed with each mold resin 241. Therefore, it is possible to prevent the deterioration of each semiconductor chip 240 due to the outgas generated from the radio wave absorber 404. Therefore, the reliability of the high frequency device 31 can be improved.

  According to the high frequency device of the fourteenth embodiment, it is possible to improve the assembly accuracy of the high frequency device. Moreover, according to the high frequency device of the fourteenth embodiment, the reliability of the high frequency device can be improved.

  It should be noted that, within the scope of the invention, the invention of the present application can freely combine the respective embodiments, modify any constituent element of each embodiment, or omit any constituent element in each embodiment. For example, in the fourth embodiment, the convex portion 343 is arranged at a position displaced from directly above the mounting component 200, but the facing surface 363 of the convex portion 343 is connected to the top surface 220 of the mounting component 200. Good. Further, when the facing surface 363 is connected to the top surface 220, a heat conductive material may be provided between the facing surface 363 and the top surface 220.

  Further, the shape of the facing surface is not limited to the rectangular shape. The facing surface of the convex portion may have a C-shape with a sharp corner, for example, as shown by the convex portion 356 in FIG. The facing surface of the convex portion may have a hook-line shape as shown by the convex portion 357 in FIG. Further, the C-shaped direction with sharp corners or the direction of the hooked line is not limited to this direction.

  10, 11, 12, 13, 14, 15, 15, 17, 18, 18, 19, 20, 21, 30, 31, 41 High-frequency device, 100, 101, 110 Dielectric substrate, 120, 121, 130 Mounting surface, 200 , 201, 211, 212, 213, 214, 216, 217, 218, 219 Mounting components, 220, 221, 231, 235 Top surface, 240 Semiconductor chip, 241 Mold resin, 300, 301, 302, 303, 304, 305 , 307, 308, 309, 310, 311, 312, 319 Lid member, 330, 331, 332, 333, 334, 339 Upper lid part, 340, 341, 342, 343, 344, 345, 347, 348, 349, 350 , 351, 352, 353, 354, 355, 356, 357 Convex portion, 360, 361, 36 , 363, 364, 370, 371, 372 facing surface, 380 conductor part, 381 dielectric part, 390, 391, 392 radio wave absorber placement part, 400, 401, 402, 403, 404 radio wave absorber, 410, 411, 412, 413, 414 openings, 500 gaps, 600 thermal conductive materials, 700 spaces.

A high-frequency device of the present invention has a dielectric substrate that propagates a high-frequency signal and has a mounting surface on one side, a mounting component mounted on the mounting surface of the dielectric substrate, and an upper lid portion facing the mounting surface. And a lid member that covers the surface and the mounted component and has conductivity. The lid member further has a convex portion that faces the mounting surface and that projects from the surface of the upper lid portion toward the mounting surface. The convex portion has a facing surface that faces the mounting surface. The mounting component has a top surface on the side opposite to the side mounted on the mounting surface. The top surface of the mounted component faces the facing surface of the convex portion. The area of the portion where the facing surface faces the top surface is smaller than the area of the top surface. The top surface of the mounted component is connected to the facing surface of the convex portion.

Claims (11)

A dielectric substrate that propagates high-frequency signals and has a mounting surface on one side,
A mounting component mounted on the mounting surface of the dielectric substrate,
An upper lid portion that faces the mounting surface, covers the mounting surface and the mounting component, and includes a conductive lid member,
The lid member further has a convex portion facing the mounting surface and protruding from the surface of the upper lid portion toward the mounting surface,
The convex portion has a facing surface facing the mounting surface,
The mounting component has a top surface on the side opposite to the side mounted on the mounting surface,
The top surface of the mounting component faces the facing surface of the convex portion,
An area of a portion where the facing surface faces the top surface is smaller than an area of the top surface. The high frequency device according to claim 1, wherein the top surface of the mounting component is connected to the facing surface of the convex portion. The high frequency device according to claim 2, wherein the top surface of the mounting component is connected to the facing surface of the convex portion via a heat conductive material. The high frequency device according to claim 1, wherein the lid member has two or more of the convex portions. The convex portion has a conductor portion and a dielectric portion,
The dielectric portion faces the mounting surface,
The high frequency device according to any one of claims 1 to 4, wherein the conductor portion is connected to the lid member and penetrates the dielectric portion. The high frequency device according to claim 1, wherein the mounted component is a component in which at least one semiconductor chip is sealed with a mold resin.   The high frequency device according to claim 1, wherein the radio wave absorber is arranged in a space surrounded by the mounting surface and the lid member. The high frequency device according to claim 7, wherein the radio wave absorber is arranged at a position displaced from a position facing the top surface of the mounting component. The lid member further has a radio wave absorber placement portion that faces the mounting surface and projects from the surface of the upper lid portion toward the mounting surface,
The high frequency device according to claim 7, wherein the radio wave absorber is arranged in the radio wave absorber arrangement portion. The high frequency device according to claim 7, wherein the radio wave absorber has an opening provided at a position facing the top surface of the mounted component. The high frequency device according to claim 7, wherein the radio wave absorber is fitted in a gap between the dielectric substrate and the upper lid portion.

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