JPWO2019131810A1 - Manufacturing method of zero-plane anchoring film and liquid crystal display element - Google Patents
Manufacturing method of zero-plane anchoring film and liquid crystal display element Download PDFInfo
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- JPWO2019131810A1 JPWO2019131810A1 JP2019562133A JP2019562133A JPWO2019131810A1 JP WO2019131810 A1 JPWO2019131810 A1 JP WO2019131810A1 JP 2019562133 A JP2019562133 A JP 2019562133A JP 2019562133 A JP2019562133 A JP 2019562133A JP WO2019131810 A1 JPWO2019131810 A1 JP WO2019131810A1
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- liquid crystal
- film
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- carbon atoms
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- 238000004519 manufacturing process Methods 0.000 title claims abstract description 40
- 238000004873 anchoring Methods 0.000 title claims abstract description 22
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- CHQMHPLRPQMAMX-UHFFFAOYSA-L sodium persulfate Substances [Na+].[Na+].[O-]S(=O)(=O)OOS([O-])(=O)=O CHQMHPLRPQMAMX-UHFFFAOYSA-L 0.000 description 1
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- SJMYWORNLPSJQO-UHFFFAOYSA-N tert-butyl 2-methylprop-2-enoate Chemical compound CC(=C)C(=O)OC(C)(C)C SJMYWORNLPSJQO-UHFFFAOYSA-N 0.000 description 1
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- QWFRRFLKWRIKSZ-UHFFFAOYSA-N truxillic acid Chemical compound OC(=O)C1C(C=2C=CC=CC=2)C(C(O)=O)C1C1=CC=CC=C1 QWFRRFLKWRIKSZ-UHFFFAOYSA-N 0.000 description 1
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Classifications
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- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08G—MACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
- C08G73/00—Macromolecular compounds obtained by reactions forming a linkage containing nitrogen with or without oxygen or carbon in the main chain of the macromolecule, not provided for in groups C08G12/00 - C08G71/00
- C08G73/06—Polycondensates having nitrogen-containing heterocyclic rings in the main chain of the macromolecule
- C08G73/10—Polyimides; Polyester-imides; Polyamide-imides; Polyamide acids or similar polyimide precursors
- C08G73/1075—Partially aromatic polyimides
- C08G73/1078—Partially aromatic polyimides wholly aromatic in the diamino moiety
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08G—MACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
- C08G73/00—Macromolecular compounds obtained by reactions forming a linkage containing nitrogen with or without oxygen or carbon in the main chain of the macromolecule, not provided for in groups C08G12/00 - C08G71/00
- C08G73/06—Polycondensates having nitrogen-containing heterocyclic rings in the main chain of the macromolecule
- C08G73/10—Polyimides; Polyester-imides; Polyamide-imides; Polyamide acids or similar polyimide precursors
- C08G73/12—Unsaturated polyimide precursors
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/1333—Constructional arrangements; Manufacturing methods
- G02F1/1337—Surface-induced orientation of the liquid crystal molecules, e.g. by alignment layers
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/1333—Constructional arrangements; Manufacturing methods
- G02F1/1343—Electrodes
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
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Abstract
ゼロ面アンカリング膜の工業的な製造方法、および、それを用いる良好な液晶表示素子及び液晶表示素子の製造方法を提供する。液晶、カイラルドーパント及びラジカル重合性化合物を含有する液晶組成物を、ラジカル発生膜に接触させた状態で、前記ラジカル重合性化合物を重合反応させるのに十分なエネルギーを与えるステップを含む、ゼロ面アンカリング膜の製造方法。および、液晶、カイラルドーパント及びラジカル重合性化合物を含有する液晶組成物を、ラジカル発生膜を有する第一基板とラジカル発生膜を有さない第二基板との間に有するセルを用意するステップ、及び前記セルに、前記ラジカル重合性化合物を重合反応させるのに十分なエネルギーを与えるステップを含む機能膜の作成方法とする。Provided are an industrial method for manufacturing a zero-plane anchoring film, and a good liquid crystal display element and a method for manufacturing a liquid crystal display element using the same. A zero-plane anchor comprising a step of imparting sufficient energy to polymerize the radically polymerizable compound in a state where the liquid crystal composition containing the liquid crystal, the chiral dopant and the radically polymerizable compound is in contact with the radical generating film. A method for producing a ring film. A step of preparing a cell having a liquid crystal composition containing a liquid crystal, a chiral dopant, and a radically polymerizable compound between a first substrate having a radical generating film and a second substrate having no radical generating film, and a step of preparing a cell. The method for producing a functional film includes a step of imparting sufficient energy to the cell to polymerize the radically polymerizable compound.
Description
本発明は、安価かつ複雑な工程を含まない手法にて、ゼロ面アンカリング膜を製造することが可能なポリマー安定化技術を応用した製造方法、及び、当該製造方法を用いる、更なる低電圧駆動を実現するための液晶表示素子およびその製造方法に関するものである。 The present invention is a manufacturing method applying a polymer stabilization technique capable of manufacturing a zero-plane anchoring film by an inexpensive method that does not include a complicated process, and a further low voltage using the manufacturing method. The present invention relates to a liquid crystal display element for realizing driving and a method for manufacturing the same.
近年、携帯電話 、コンピュータ及びテレビのディスプレイなどには液晶表示素子が広く用いられている。液晶表示素子は薄型、軽量、低消費電力などの特性を有しており、今後はVRや超高精細のディスプレイ等、更なるコンテンツへの応用が期待されている。液晶ディスプレイの表示方式には、TN(Twisted Nematic)、IPS(In−Plane Switching)、VA(Vertical Alignment)など様々な表示モードが提案されているが、すべてのモードには液晶を所望の配向状態に誘導する膜(液晶配向膜)が使用されている。 In recent years, liquid crystal display elements have been widely used in mobile phones, computers, television displays, and the like. Liquid crystal display elements have characteristics such as thinness, light weight, and low power consumption, and are expected to be applied to further contents such as VR and ultra-high definition displays in the future. Various display modes such as TN (Twisted Nematic), IPS (In-Plane Switching), and VA (Vertical Alignment) have been proposed as display methods for the liquid crystal display, and the liquid crystal is oriented in a desired orientation state in all modes. (Liquid crystal alignment film) is used.
特にタブレットPCやスマートフォン、スマートTV等のタッチパネルを具備した製品には、タッチしても表示が乱れにくいIPSモードが好まれており、近年ではコントラスト向上や視野角特性の向上の点でFFS(Frindge Field Switching)を用いた液晶表示素子や、光配向を用いた非接触技術を用いた技術が用いられるようになってきた。 In particular, IPS mode, which does not distort the display even when touched, is preferred for products equipped with a touch panel such as tablet PCs, smartphones, and smart TVs. Liquid crystal display elements using Field Switching) and technologies using non-contact technology using photoalignment have come to be used.
しかしながら、FFSはIPSに比べ基板の製造コストが大きく、Vcomシフトと呼ばれるFFSモード特有の表示不良が発生する課題がある。また光配向に関しては、ラビング法に比べ、製造できる素子の大きさを大きくできる点や表示特性を大きく向上できるというメリットがあるが、光配向の原理上の課題(分解型であれば分解物由来の表示不良、異性化型であれば配向力不足による焼き付き等)が挙げられる。それらの課題を解決するために液晶表示素子メーカーや液晶配向膜メーカーは種々工夫を行っているのが現状である。 However, FFS has a higher substrate manufacturing cost than IPS, and has a problem that a display defect peculiar to FFS mode called Vcom shift occurs. In addition, regarding photo-orientation, compared to the rubbing method, there are merits that the size of the element that can be manufactured can be increased and the display characteristics can be greatly improved. If it is an isomerized type, it may be burned in due to insufficient orientation. At present, liquid crystal display element manufacturers and liquid crystal alignment film manufacturers are making various efforts to solve these problems.
一方で、近年ゼロ面アンカリングというものを利用したIPSモードが提案されており、この手法を用いることで従来のIPSモードに比べてコントラスト向上や大幅な低電圧駆動が可能になるという報告がされている(特許文献1参照)。 On the other hand, in recent years, an IPS mode using what is called zero-plane anchoring has been proposed, and it has been reported that using this method enables improved contrast and significantly lower voltage drive compared to the conventional IPS mode. (See Patent Document 1).
具体的には、片側の基板には強いアンカリングエネルギーを有する液晶配向膜を用い、一方の横電界を発生させる方の電極を具備した基板側には一切液晶の配向規制力を有さなくなるような処理を施し、それらを用いてIPSモードの液晶表示素子を作る方法である。 Specifically, a liquid crystal alignment film having strong anchoring energy is used for the substrate on one side, and the substrate side provided with the electrode that generates the transverse electric field on one side has no liquid crystal orientation regulating force. This is a method of making a liquid crystal display element in IPS mode by performing various processes and using them.
近年では、濃厚ポリマーブラシ等を用いてゼロ面状態を作り出し、セロ面アンカリングIPSモードの技術提案がなされている(参考文献2)。この技術によりコントラスト比の大幅な向上や駆動電圧の大幅な低下を実現している。 In recent years, a technical proposal for a cellophane anchoring IPS mode has been made by creating a zero-plane state using a concentrated polymer brush or the like (Reference 2). This technology has realized a significant improvement in the contrast ratio and a significant reduction in the drive voltage.
一方でこの技術には原理的に発生する課題があり、第1はポリマーブラシを基板上に安定的に発生させるためには非常に繊細な条件で行う必要があり、量産を考えると現実的ではないことが挙げられる。第2は、配向膜は焼き付き抑制などの重要な働きを担っているが、ポリマーブラシ等を用いる場合は必要となる電気物性などの制御が困難であることが挙げられる。第3は駆動原理上電圧Offにした際の応答速度が非常に遅くなることが挙げられる。配向規制力をゼロにすることで液晶にかかる駆動時の抵抗を無くすことで閾値電圧の大幅な低下と、駆動時の配向不良領域が減少することによる輝度向上が期待されるが、液晶の戻りに関しては、液晶の戻る際の動力は液晶の弾性力に依存するため、配向膜があるときに比べて大きく速度が低下することが考えられる。
このような技術的課題を解決できればパネルメーカーとしても大きなコストメリットとなり、バッテリーの消費抑制や画質の向上等にもメリットとなることが考えられる。
本発明は、上記のような課題を解決するためになされたものであり、ゼロ面アンカリング膜を製造することが可能なポリマー安定化技術を応用した製造方法、及び、常温において、簡便且つ安価な方法で非接触配向と低駆動電圧化とOff時の応答速度も速くすることが同時に実現できる、横電界液晶表示素子およびその製造方法を提供することを目的とする。On the other hand, this technology has problems that occur in principle, and the first is that it is necessary to perform under extremely delicate conditions in order to stably generate a polymer brush on a substrate, which is not realistic considering mass production. There is no such thing. Secondly, the alignment film plays an important role such as suppressing seizure, but it is difficult to control the electrical properties required when using a polymer brush or the like. Thirdly, due to the driving principle, the response speed when the voltage is turned off becomes very slow. It is expected that the threshold voltage will be significantly reduced by eliminating the resistance during driving applied to the liquid crystal by setting the orientation regulating force to zero, and the brightness will be improved by reducing the misaligned region during driving, but the liquid crystal will return. As for, since the power when the liquid crystal returns depends on the elastic force of the liquid crystal, it is considered that the speed is significantly reduced as compared with the case where the alignment film is present.
If such technical problems can be solved, it will be a great cost merit as a panel maker, and it is considered that it will be a merit for suppressing battery consumption and improving image quality.
The present invention has been made to solve the above-mentioned problems, and is a manufacturing method applying polymer stabilization technology capable of manufacturing a zero-plane anchoring film, and is simple and inexpensive at room temperature. It is an object of the present invention to provide a transverse electric field liquid crystal display element and a method for manufacturing the same, which can simultaneously realize non-contact orientation, lower drive voltage, and faster response speed at off.
本発明者らは、上記の課題を解決する為、鋭意検討を行った結果、上記の課題を解決出来ることを見出し、以下の要旨を有する本発明を完成させた。 As a result of diligent studies to solve the above problems, the present inventors have found that the above problems can be solved, and have completed the present invention having the following gist.
すなわち、本発明は以下を包含する。
[1] 液晶、カイラルドーパント及びラジカル重合性化合物を含有する液晶組成物を、ラジカル発生膜に接触させた状態で、前記ラジカル重合性化合物を重合反応させるのに十分なエネルギーを与えるステップを含む、ゼロ面アンカリング膜の製造方法。
[2] 前記第一基板の有するラジカル発生膜が一軸配向処理されたラジカル発生膜である請求項1に記載の方法。
[3] エネルギーを与えるステップを無電界で行う、請求項1又は2に記載の方法。
[4] 前記ラジカル発生膜が、ラジカル重合を誘発する有機基が固定化されて成る膜であることを特徴とする請求項1〜3のいずれか一項に記載の方法。
[5] 前記ラジカル発生膜が、ラジカルを発生する基を有する化合物と重合体との組成物を塗布、硬化して膜を形成することにより膜中に固定化させて得られることを特徴とする請求項1〜3のいずれか一項に記載の方法。
[6] 前記ラジカル発生膜が、ラジカル重合を誘発する有機基を含有する重合体から成ることを特徴とする請求項1〜3のいずれか一項に記載の方法。
[7] 前記ラジカル重合を誘発する有機基を含有する重合体が、ラジカル重合を誘発する有機基を含有するジアミンを含むジアミン成分を用いて得られるポリイミド前駆体、ポリイミド、ポリウレアおよびポリアミドから選ばれる少なくとも一種の重合体であることを特徴とする請求項6記載の方法。
[8] 前記ラジカル重合を誘発する有機基が下記構造[X−1]〜[X−14]、[W]、[Y]、[Z]で表される有機基である請求項4、6及び7のいずれか一項に記載の方法。
(式[X−1]〜[X14]中、*は化合物分子の重合性不飽和結合以外の部分との結合部位を示し、S1、S2はそれぞれ独立して−O−、−NR−、−S−を表し、Rは水素原子又は炭素原子数1〜4のアルキル基を表し、R12は水素原子、ハロゲン原子、炭素数1〜10のアルキル基、炭素数1〜10のアルコキシ基を表し、R1,R2はそれぞれ独立して水素原子、ハロゲン原子、炭素数1〜4のアルキル基を表す)
(式[W]、[Y]、[Z]中、*は化合物分子の重合性不飽和結合以外の部分との結合部位を示し、Arは有機基及び/又はハロゲン原子を置換基として有しても良いフェニレン、ナフチレン、及びビフェニレンからなる群より選ばれる芳香族炭化水素基を示し、R9及びR10は、それぞれ独立に、炭素数1〜10のアルキル基又は炭素数1〜10のアルコキシ基を表し、R9とR10がアルキル基の場合、末端で互いに結合し環構造を形成していても良い。Qは下記のいずれかの構造を表す。
(式中、R11は−CH2−、−NR−、−O−、又は−S−を表し、Rは水素原子又は炭素原子数1〜4のアルキル基を表し、*は化合物分子のQ以外の部分との結合部位を示す。)
R12は水素原子、ハロゲン原子、炭素数1〜10のアルキル基又は炭素数1〜10のアルコキシ基を表す。)
[9] 前記ラジカル重合を誘発する有機基を含有するジアミンが下記一般式(6)又は下記一般式(7)で表される構造を有するジアミンであることを特徴とする請求項7記載の方法。
(式(6)中、R6は単結合、−CH2−、−O−、−COO−、−OCO−、−NHCO−、−CONH−、−NH−、−CH2O−、−N(CH3)−、−CON(CH3)−、又は−N(CH3)CO−を表し、
R7は単結合、又は非置換もしくはフッ素原子によって置換されている炭素数1〜20のアルキレン基を表し、当該アルキレン基の任意の−CH2−又は−CF2−の1以上は、それぞれ独立に−CH=CH−、二価の炭素環、および二価の複素環から選ばれる基で置き換えられていてもよく、さらに、次に挙げるいずれかの基、すなわち、−O−、−COO−、−OCO−、−NHCO−、−CONH−、又は−NH−が互いに隣り合わないことを条件に、これらの基で置き換えられていてもよい;
R8は、下記式:
から選択されるラジカル重合反応性基を表す。
(式[X−1]〜[X−14]中、*は化合物分子のラジカル重合反応性基以外の部分との結合部位を示し、S1、S2はそれぞれ独立して−O−、−NR−、−S−を表し、Rは水素原子又は炭素原子数1〜4のアルキル基を表し、R12は水素原子、ハロゲン原子、炭素数1〜10のアルキル基、炭素数1〜10のアルコキシ基を表し、R1,R2はそれぞれ独立して水素原子、ハロゲン原子、炭素数1〜4のアルキル基を表す))
(式(7)中、T1及びT2は、それぞれ独立に、単結合、−O−、−S−、−COO−、−OCO−、−NHCO−、−CONH−、−NH−、−CH2O−、−N(CH3)−、−CON(CH3)−、又は−N(CH3)CO−であり、
Sは単結合、又は非置換もしくはフッ素原子によって置換されている炭素数1〜20のアルキレン基を表し、当該アルキレン基の任意の−CH2−又は−CF2−の1以上は、それぞれ独立に−CH=CH−、二価の炭素環、および二価の複素環から選ばれる基で置き換えられていてもよく、さらに、次に挙げるいずれかの基、すなわち、−O−、−COO−、−OCO−、−NHCO−、−CONH−、又は−NH−が互いに隣り合わないことを条件に、これらの基で置き換えられていてもよく、
Jは下記式で表される有機基であり、
(式[W]、[Y]、[Z]中、*はT2との結合箇所を表し、Arは有機基及び/又はハロゲン原子を置換基として有しても良いフェニレン、ナフチレン、及びビフェニレンからなる群より選ばれる芳香族炭化水素基を示し、R9及びR10は、それぞれ独立に、炭素数1〜10のアルキル基又は炭素数1〜10のアルコキシ基を表し、Qは下記のいずれかの構造を表す。
(式中、R11は−CH2−、−NR−、−O−、又は−S−を表し、Rは水素原子又は炭素原子数1〜4のアルキル基を表し、*は化合物分子のQ以外の部分との結合部位を示す。)
R12は水素原子、ハロゲン原子、炭素数1〜10のアルキル基又は炭素数1〜10のアルコキシ基を表す。))
[10] 前記ラジカル重合性化合物のうち少なくとも一種が、液晶と相溶性を有する、一分子中に一個の重合性不飽和結合を有する化合物である、請求項1〜9のいずれか一項に記載の方法。
[11] 前記ラジカル重合性化合物の重合性不飽和結合が以下の構造から選ばれる、請求項10に記載の方法。
(式中、*は化合物分子の重合性不飽和結合以外の部分との結合部位を示す)
[12] 前記液晶、カイラルドーパント及びラジカル重合性化合物を含有する液晶組成物において、前記ラジカル重合性化合物を重合させて得られるポリマーのTgが100℃以下のものになるラジカル重合性化合物を含有する液晶組成物を用いることを特徴とする請求項1〜11のいずれか一項に記載の方法。
[13] ラジカル発生膜を有する第一基板と、ラジカル発生膜を有していてもよい第二基板とを用意するステップ、
第一基板上のラジカル発生膜が第二基板に対向するようにセルを作成するステップ、および、
第一基板と第二基板との間に、液晶、カイラルドーパント及びラジカル重合性化合物を含有する液晶組成物を充填するステップを含み、
請求項1〜12のいずれか一項に記載の方法を用いる液晶セルの製造方法。
[14] 前記第二基板がラジカル発生膜を有さない第二基板である請求項13に記載の液晶セルの製造方法。
[15] 前記第二基板が、一軸配向性を有する液晶配向膜がコーティングされた基板であることを特徴とする請求項14に記載の液晶セルの製造方法。
[16] 前記一軸配向性を有する液晶配向膜が水平配向用の液晶配向膜であることを特徴とする請求項15に記載の液晶セルの製造方法。
[17] 前記ラジカル発生膜を有する第一基板が櫛歯電極を有する基板である請求項請求項13〜16のいずれか一項に記載の液晶セルの製造方法。
[18] 液晶、カイラルドーパント及びラジカル重合性化合物を含有し、
前記ラジカル重合性化合物のうち少なくとも一種が、液晶と相溶性を有する、一分子中に一個の重合性不飽和結合を有する化合物であり、
重合性不飽和結合が以下の構造から選ばれる、液晶組成物。
(式中、*は化合物分子の重合性不飽和結合以外の部分との結合部位を示す)
[19] 請求項1〜17のいずれか一項に記載の方法を用いて得られたゼロ面アンカリング状態を作り出す膜を用いる液晶表示素子の製造方法。
[20] 請求項19記載の方法を用いて得られた液晶表示素子。
[21] 第一基板又は第二基板が電極を有する、請求項20に記載の液晶表示素子。
[22] 低電圧駆動横電界液晶表示素子である、請求項20又は21に記載の液晶表示素子。That is, the present invention includes the following.
[1] A step of imparting sufficient energy to polymerize the radically polymerizable compound in a state where the liquid crystal composition containing the liquid crystal, the chiral dopant and the radically polymerizable compound is in contact with the radical generating film is included. A method for producing a zero-plane anchoring film.
[2] The method according to claim 1, wherein the radical generation film contained in the first substrate is a radical generation film subjected to uniaxial orientation treatment.
[3] The method according to claim 1 or 2, wherein the step of applying energy is performed without an electric field.
[4] The method according to any one of claims 1 to 3, wherein the radical generating film is a film formed by immobilizing an organic group that induces radical polymerization.
[5] The radical-generating film is obtained by applying a composition of a compound having a radical-generating group and a polymer and curing the film to form a film, thereby immobilizing the film. The method according to any one of claims 1 to 3.
[6] The method according to any one of claims 1 to 3, wherein the radical generating film is composed of a polymer containing an organic group that induces radical polymerization.
[7] The polymer containing an organic group that induces radical polymerization is selected from a polyimide precursor, a polyimide, a polyurea, and a polyamide obtained by using a diamine component containing a diamine containing an organic group that induces radical polymerization. The method according to claim 6, wherein the polymer is at least one kind.
[8] Claims 4, 6 in which the organic group that induces radical polymerization is an organic group represented by the following structures [X-1] to [X-14], [W], [Y], and [Z]. And the method according to any one of 7.
(In the formulas [X-1] to [X14], * indicates a bonding site with a portion other than the polymerizable unsaturated bond of the compound molecule, and S 1 and S 2 are independently -O- and -NR-, respectively. , -S-, R represents a hydrogen atom or an alkyl group having 1 to 4 carbon atoms, and R 12 is a hydrogen atom, a halogen atom, an alkyl group having 1 to 10 carbon atoms, or an alkoxy group having 1 to 10 carbon atoms. R 1 and R 2 independently represent a hydrogen atom, a halogen atom, and an alkyl group having 1 to 4 carbon atoms).
(In the formulas [W], [Y], and [Z], * indicates a bond site with a portion other than the polymerizable unsaturated bond of the compound molecule, and Ar has an organic group and / or a halogen atom as a substituent. It represents an aromatic hydrocarbon group selected from the group consisting of phenylene, naphthylene, and biphenylene, wherein R 9 and R 10 are independently alkyl groups having 1 to 10 carbon atoms or alkoxy groups having 1 to 10 carbon atoms. Representing a group, when R 9 and R 10 are alkyl groups, they may be bonded to each other at the ends to form a ring structure. Q represents any of the following structures.
(In the formula, R 11 represents -CH 2- , -NR-, -O-, or -S-, R represents a hydrogen atom or an alkyl group having 1 to 4 carbon atoms, and * represents Q of the compound molecule. Indicates the binding site with a part other than the above.)
R 12 represents a hydrogen atom, a halogen atom, an alkyl group having 1 to 10 carbon atoms, or an alkoxy group having 1 to 10 carbon atoms. )
[9] The method according to claim 7, wherein the diamine containing an organic group that induces radical polymerization is a diamine having a structure represented by the following general formula (6) or the following general formula (7). ..
(In formula (6), R 6 is a single bond, -CH 2- , -O-, -COO-, -OCO-, -NHCO-, -CONH-, -NH-, -CH 2 O-, -N. (CH 3) -, - CON (CH 3) -, or -N (CH 3) CO- represents,
R 7 represents an alkylene group having 1 to 20 carbon atoms which is single-bonded, or unsubstituted or substituted with a fluorine atom, and one or more of any -CH 2- or -CF 2- of the alkylene group is independent of each other. May be replaced with a group selected from -CH = CH-, a divalent carbon ring, and a divalent heterocycle, and any of the following groups, namely -O-, -COO- , -OCO-, -NHCO-, -CONH-, or -NH- may be replaced by these groups, provided they are not adjacent to each other;
R 8 is represented by the following formula:
Represents a radical polymerization reactive group selected from.
(In formulas [X-1] to [X-14], * indicates a bonding site with a portion of the compound molecule other than the radical polymerization reactive group, and S 1 and S 2 are independently -O- and-, respectively. Represents NR- and -S-, R represents a hydrogen atom or an alkyl group having 1 to 4 carbon atoms, and R 12 represents a hydrogen atom, a halogen atom, an alkyl group having 1 to 10 carbon atoms, and 1 to 10 carbon atoms. Represents an alkoxy group, and R 1 and R 2 independently represent a hydrogen atom, a halogen atom, and an alkyl group having 1 to 4 carbon atoms))
(In formula (7), T 1 and T 2 are independently single-bonded, -O-, -S-, -COO-, -OCO-, -NHCO-, -CONH-, -NH-,-. CH 2 O-, -N (CH 3 )-, -CON (CH 3 )-, or -N (CH 3 ) CO-
S represents an alkylene group having 1 to 20 carbon atoms which is single-bonded, or unsubstituted or substituted with a fluorine atom, and one or more of any -CH 2- or -CF 2- of the alkylene group is independent of each other. It may be replaced with a group selected from −CH = CH−, a divalent carbocycle, and a divalent heterocyclic ring, and any of the following groups, namely −O−, −COO−,. -OCO-, -NHCO-, -CONH-, or -NH- may be replaced by these groups provided they are not adjacent to each other.
J is an organic group represented by the following formula.
(In the formulas [W], [Y], and [Z], * represents the bonding site with T 2, and Ar represents phenylene, naphthylene, and biphenylene which may have an organic group and / or a halogen atom as a substituent. Indicates an aromatic hydrocarbon group selected from the group consisting of, R 9 and R 10 each independently represent an alkyl group having 1 to 10 carbon atoms or an alkoxy group having 1 to 10 carbon atoms, and Q is any of the following. Represents the structure.
(In the formula, R 11 represents -CH 2- , -NR-, -O-, or -S-, R represents a hydrogen atom or an alkyl group having 1 to 4 carbon atoms, and * represents Q of the compound molecule. Indicates the binding site with a part other than the above.)
R 12 represents a hydrogen atom, a halogen atom, an alkyl group having 1 to 10 carbon atoms, or an alkoxy group having 1 to 10 carbon atoms. )))
[10] The invention according to any one of claims 1 to 9, wherein at least one of the radically polymerizable compounds is a compound having compatibility with a liquid crystal and having one polymerizable unsaturated bond in one molecule. the method of.
[11] The method according to claim 10, wherein the polymerizable unsaturated bond of the radically polymerizable compound is selected from the following structures.
(In the formula, * indicates the binding site of the compound molecule with a portion other than the polymerizable unsaturated bond)
[12] In a liquid crystal composition containing the liquid crystal, a chiral dopant and a radically polymerizable compound, the liquid crystal composition contains a radically polymerizable compound having a Tg of a polymer obtained by polymerizing the radically polymerizable compound of 100 ° C. or less. The method according to any one of claims 1 to 11, wherein a liquid crystal composition is used.
[13] A step of preparing a first substrate having a radical generating film and a second substrate having a radical generating film.
A step of creating a cell so that the radical generation film on the first substrate faces the second substrate, and
A step of filling a liquid crystal composition containing a liquid crystal, a chiral dopant and a radically polymerizable compound between the first substrate and the second substrate is included.
A method for manufacturing a liquid crystal cell using the method according to any one of claims 1 to 12.
[14] The method for manufacturing a liquid crystal cell according to claim 13, wherein the second substrate is a second substrate having no radical generation film.
[15] The method for manufacturing a liquid crystal cell according to claim 14, wherein the second substrate is a substrate coated with a liquid crystal alignment film having uniaxial orientation.
[16] The method for manufacturing a liquid crystal cell according to claim 15, wherein the liquid crystal alignment film having uniaxial orientation is a liquid crystal alignment film for horizontal alignment.
[17] The method for producing a liquid crystal cell according to any one of claims 13 to 16, wherein the first substrate having the radical generating film is a substrate having a comb tooth electrode.
[18] Contains liquid crystal, chiral dopant and radically polymerizable compound,
At least one of the radically polymerizable compounds is a compound having a polymerizable unsaturated bond in one molecule and having compatibility with a liquid crystal.
A liquid crystal composition in which a polymerizable unsaturated bond is selected from the following structures.
(In the formula, * indicates the binding site of the compound molecule with a portion other than the polymerizable unsaturated bond)
[19] A method for manufacturing a liquid crystal display element using a film that creates a zero-plane anchoring state obtained by using the method according to any one of claims 1 to 17.
[20] A liquid crystal display element obtained by using the method according to claim 19.
[21] The liquid crystal display element according to claim 20, wherein the first substrate or the second substrate has electrodes.
[22] The liquid crystal display element according to claim 20 or 21, which is a low voltage drive transverse electric field liquid crystal display element.
本発明によれば、ゼロ面アンカリング膜を工業的に、歩留まりよく作り出すことができる。本発明の方法を用いて、安価な原料や既存の製造法で特許文献1、2記載のゼロ面アンカリングIPSモード液晶表示素子に類似した液晶表示素子を簡便に製造することができる。また、本発明の製造方法で得られた液晶表示素子は、従来技術よりもOff時の液晶の応答速度が速く、且つ低駆動電圧、輝点なし、IPSモードではVcomシフトの抑制ができ、FFSモードでは更なる高精細化が可能、といった優れた特性を有する液晶表示素子を提供することができる。 According to the present invention, a zero-plane anchoring film can be industrially produced with a high yield. By using the method of the present invention, a liquid crystal display element similar to the zero-plane anchoring IPS mode liquid crystal display element described in Patent Documents 1 and 2 can be easily manufactured by an inexpensive raw material or an existing manufacturing method. Further, the liquid crystal display element obtained by the manufacturing method of the present invention has a faster response speed of the liquid crystal when it is off than the conventional technology, has a low drive voltage, has no bright spot, and can suppress Vcom shift in the IPS mode, and FFS. It is possible to provide a liquid crystal display element having excellent characteristics such that higher definition can be achieved in the mode.
本発明は、ラジカル発生膜に特定の重合性化合物を含有する液晶を接触させた状態でUVまたは熱により重合性化合物を重合させることを特徴とするゼロ面アンカリング膜の製造方法である。より具体的には、液晶、カイラルドーパント及びラジカル重合性化合物を含有する液晶組成物を、ラジカル発生膜を有する第一基板とラジカル発生膜を有していてもよい第二基板との間に有するセルを用意するステップ、及び前記セルに、前記ラジカル重合性化合物を重合反応させるのに十分なエネルギーを与えるステップを含む、ゼロ面アンカリング膜の製造方法である。好ましくは、ラジカル発生膜を有する第一基板と、ラジカル発生膜を有さない第二基板とを用意するステップ、ラジカル発生膜が第二基板に対向するようにセルを作成するステップ、および、第一基板と第二基板との間に、液晶、カイラルドーパント及びラジカル重合性化合物を含有する液晶組成物を充填するステップを含む液晶セルの製造方法である。例えば、第二基板がラジカル発生膜を有さないとともに、一軸配向処理された液晶配向膜を有する基盤であり、第一基板が櫛歯電極を有する基板である、低電圧駆動IPS液晶表示素子の作成方法である。 The present invention is a method for producing a zero-plane anchoring film, which comprises polymerizing a polymerizable compound by UV or heat in a state where a liquid crystal containing a specific polymerizable compound is brought into contact with the radical generating film. More specifically, a liquid crystal composition containing a liquid crystal, a chiral dopant and a radically polymerizable compound is provided between a first substrate having a radical generating film and a second substrate having a radical generating film. A method for producing a zero-plane anchoring film, which comprises a step of preparing a cell and a step of imparting sufficient energy to the cell to carry out a polymerization reaction of the radically polymerizable compound. Preferably, a step of preparing a first substrate having a radical generating film and a second substrate having no radical generating film, a step of creating a cell so that the radical generating film faces the second substrate, and a first step. A method for producing a liquid crystal cell, which comprises a step of filling a liquid crystal composition containing a liquid crystal, a chiral dopant and a radically polymerizable compound between one substrate and a second substrate. For example, a low-voltage drive IPS liquid crystal display element in which the second substrate does not have a radical generating film and has a uniaxially oriented liquid crystal alignment film, and the first substrate has a comb-tooth electrode. It is a creation method.
本発明において「ゼロ面アンカリング膜」とは、面内方向における液晶分子の配向規制力が全く無いか、あったとしても液晶同士の分子間力よりも弱く、この膜のみでは液晶分子をいずれの方向にも一軸配向させない膜をいう。また、このゼロ面アンカリング膜は、固体膜に限定されず固体表面を覆う液体膜も含まれる。通常、液晶表示素子には液晶分子の配向を規制する膜、すなわち液晶配向膜を対で用いて液晶を配向させるが、このゼロ面アンカリング膜と液晶配向膜を対で用いた場合も液晶を配向させることが出来る。これは、液晶配向膜の配向規制力が液晶分子同士の分子間力によって液晶層の厚み方向にも伝達し、結果としてゼロ面アンカリング膜に近接する液晶分子も配向するからである。よって液晶配向膜に水平配向用の液晶配向膜を用いた場合においては液晶セル内全体で水平配向状態を作り出すことが出来る。水平配向とは液晶分子の長軸が液晶配向膜面に対してほぼ平行に配列している状態をいい、数度程度の傾斜配向も水平配向の範疇に含まれる。 In the present invention, the "zero-plane anchoring film" has no or, if any, weaker intermolecular force between liquid crystal molecules in the in-plane direction, and the liquid crystal molecules can be eventually formed by this film alone. A film that is not uniaxially oriented in the direction of. Further, the zero-plane anchoring film is not limited to the solid film, but also includes a liquid film covering the solid surface. Normally, a film that regulates the orientation of liquid crystal molecules, that is, a liquid crystal alignment film, is used in a pair to align the liquid crystal in the liquid crystal display element, but when the zero-plane anchoring film and the liquid crystal alignment film are used in pairs, the liquid crystal is also used. Can be oriented. This is because the alignment restricting force of the liquid crystal alignment film is transmitted to the thickness direction of the liquid crystal layer by the intermolecular force between the liquid crystal molecules, and as a result, the liquid crystal molecules close to the zero-plane anchoring film are also oriented. Therefore, when a liquid crystal alignment film for horizontal alignment is used as the liquid crystal alignment film, a horizontal alignment state can be created in the entire liquid crystal cell. Horizontal orientation refers to a state in which the major axes of liquid crystal molecules are arranged substantially parallel to the liquid crystal alignment film surface, and inclined orientation of about several degrees is also included in the category of horizontal orientation.
[ラジカル発生膜形成組成物]
本発明に用いるラジカル発生膜を形成するためのラジカル発生膜形成組成物は、成分として、重合体を含有し、ラジカルを発生しうる基を含有する。その際、当該組成物は、ラジカルを発生しうる基が結合した重合体を含有するものであってもよいし、ラジカルを発生しうる基を有する化合物と、ベース樹脂となる重合体との組成物であってもよい。このような組成物を塗布、硬化して膜を形成することにより、ラジカルを発生しうる基が膜中に固定化されたラジカル発生膜を得ることができる。ラジカルを発生しうる基は、ラジカル重合を誘発する有機基であることが好ましい。[Radical generation film forming composition]
The radical generation film forming composition for forming the radical generation film used in the present invention contains a polymer as a component and contains a group capable of generating radicals. At that time, the composition may contain a polymer to which a group capable of generating radicals is bonded, or a composition of a compound having a group capable of generating radicals and a polymer serving as a base resin. It may be a thing. By applying and curing such a composition to form a film, it is possible to obtain a radical generating film in which radical-generating groups are immobilized in the film. The group capable of generating radicals is preferably an organic group that induces radical polymerization.
そのような、ラジカル重合を誘発する有機基としては下記構造で表される[X−1]〜[X−14]、[W]、[Y]、[Z]で表される有機基が挙げられる。
(式[X−1]〜[X−14]中、*は化合物分子の重合性不飽和結合以外の部分との結合部位を示し、S1、S2はそれぞれ独立して−O−、−NR−、−S−を表し、Rは水素原子又は炭素原子数1〜4のアルキル基を表し、R12は水素原子、ハロゲン原子、炭素数1〜10のアルキル基、炭素数1〜10のアルコキシ基を表し、R1,R2はそれぞれ独立して水素原子、ハロゲン原子、炭素数1〜4のアルキル基を表す)
(式[W]、[Y]、[Z]中、*は化合物分子の重合性不飽和結合以外の部分との結合部位を示し、Arは有機基及び/又はハロゲン原子を置換基として有しても良いフェニレン、ナフチレン、及びビフェニレンからなる群より選ばれる芳香族炭化水素基を示し、R9及びR10は、それぞれ独立に、炭素数1〜10のアルキル基又は炭素数1〜10のアルコキシ基を表し、R9とR10がアルキル基の場合、末端で互いに結合し環構造を形成していても良い。Qは下記のいずれかの構造を表す。
(式中、R11は−CH2−、−NR−、−O−、又は−S−を表し、Rは水素原子又は炭素原子数1〜4のアルキル基を表し、*は化合物分子のQ以外の部分との結合部位を示す。)
R12は水素原子、ハロゲン原子、炭素数1〜10のアルキル基又は炭素数1〜10のアルコキシ基を表す。)Examples of such an organic group that induces radical polymerization include organic groups represented by [X-1] to [X-14], [W], [Y], and [Z] represented by the following structures. Be done.
(In the formulas [X-1] to [X-14], * indicates a bonding site with a portion other than the polymerizable unsaturated bond of the compound molecule, and S 1 and S 2 are independently -O- and-, respectively. Represents NR- and -S-, R represents a hydrogen atom or an alkyl group having 1 to 4 carbon atoms, and R 12 represents a hydrogen atom, a halogen atom, an alkyl group having 1 to 10 carbon atoms, and 1 to 10 carbon atoms. Represents an alkoxy group, and R 1 and R 2 independently represent a hydrogen atom, a halogen atom, and an alkyl group having 1 to 4 carbon atoms).
(In the formulas [W], [Y], and [Z], * indicates a bond site with a portion other than the polymerizable unsaturated bond of the compound molecule, and Ar has an organic group and / or a halogen atom as a substituent. It represents an aromatic hydrocarbon group selected from the group consisting of phenylene, naphthylene, and biphenylene, wherein R 9 and R 10 are independently alkyl groups having 1 to 10 carbon atoms or alkoxy groups having 1 to 10 carbon atoms. Representing a group, when R 9 and R 10 are alkyl groups, they may be bonded to each other at the ends to form a ring structure. Q represents any of the following structures.
(In the formula, R 11 represents -CH 2- , -NR-, -O-, or -S-, R represents a hydrogen atom or an alkyl group having 1 to 4 carbon atoms, and * represents Q of the compound molecule. Indicates the binding site with a part other than the above.)
R 12 represents a hydrogen atom, a halogen atom, an alkyl group having 1 to 10 carbon atoms, or an alkoxy group having 1 to 10 carbon atoms. )
重合体としては、例えばポリイミド前駆体、及びポリイミド、ポリウレア、ポリアミド、ポリアクリレート、ポリメタクリレートなどからなる群から選ばれる少なくとも1種の重合体が好ましい。 As the polymer, for example, a polyimide precursor and at least one polymer selected from the group consisting of polyimide, polyurea, polyamide, polyacrylate, polymethacrylate and the like are preferable.
本発明に用いるラジカル発生膜を得るために、前記ラジカル重合を誘発する有機基を有する重合体を用いる場合、ラジカルを発生しうる基を有する重合体を得るには、モノマー成分として、メタクリル基、アクリル基、ビニル基、アリル基、クマリン基、スチリル基及びシンナモイル基から選択される少なくとも一種を含む光反応性の側鎖を有するモノマーや、紫外線照射により分解し、ラジカルを発生する部位を側鎖に有するモノマーを用いて製造することが好ましい。一方で、ラジカルを発生するモノマーはそれ自体が自発的に重合をしてしまうなどの問題点が考えられ、不安定化合物となってしまうため、合成のしやすさの点ではラジカル発生部位を有するジアミンから誘導される重合体が好ましく、より好ましくはポリアミック酸やポリアミック酸エステル等のポリイミド前駆体、ポリイミド、ポリウレア、ポリアミドなどが好ましい。 When a polymer having an organic group that induces radical polymerization is used to obtain the radical generation film used in the present invention, in order to obtain a polymer having a group capable of generating radicals, a methacryl group is used as a monomer component. A monomer having a photoreactive side chain containing at least one selected from an acrylic group, a vinyl group, an allyl group, a coumarin group, a styryl group and a cinnamoyl group, and a side chain that is decomposed by ultraviolet irradiation to generate a radical. It is preferable to produce using the monomer contained in. On the other hand, the monomer that generates radicals has a problem that it spontaneously polymerizes, and becomes an unstable compound. Therefore, it has a radical generation site in terms of ease of synthesis. A polymer derived from a diamine is preferable, and a polyimide precursor such as a polyamic acid or a polyamic acid ester, a polyimide, a polyurea, a polyamide, or the like is preferable.
そのようなラジカル発生部位含有ジアミンは、具体的には、例えば、ラジカルを発生し重合可能な側鎖を有するジアミンであり、下記の一般式(6)で表されるジアミンを挙げることができるが、これに限定されるものではない。
(式(6)中、R6は単結合、−CH2−、−O−、−COO−、−OCO−、−NHCO−、−CONH−、−NH−、−CH2O−、−N(CH3)−、−CON(CH3)−、又は−N(CH3)CO−を表し、
R7は単結合、又は非置換もしくはフッ素原子によって置換されている炭素数1〜20のアルキレン基を表し、当該アルキレン基の任意の−CH2−又は−CF2−の1以上は、それぞれ独立に−CH=CH−、二価の炭素環、および二価の複素環から選ばれる基で置き換えられていてもよく、さらに、次に挙げるいずれかの基、すなわち、−O−、−COO−、−OCO−、−NHCO−、−CONH−、又は−NH−が互いに隣り合わないことを条件に、これらの基で置き換えられていてもよい;
R8は、下記式:
から選択されるラジカル重合反応性基を表す。
(式[X−1]〜[X−14]中、*は化合物分子のラジカル重合反応性基以外の部分との結合部位を示し、S1、S2はそれぞれ独立して−O−、−NR−、−S−を表し、Rは水素原子又は炭素原子数1〜4のアルキル基を表し、R12は水素原子、ハロゲン原子、炭素数1〜10のアルキル基、炭素数1〜10のアルコキシ基を表し、R1,R2はそれぞれ独立して水素原子、ハロゲン原子、炭素数1〜4のアルキル基を表す)Specific examples of such a radical-generating site-containing diamine are diamines having a side chain capable of generating radicals and being polymerized, and examples thereof include diamines represented by the following general formula (6). , Not limited to this.
(In formula (6), R 6 is a single bond, -CH 2- , -O-, -COO-, -OCO-, -NHCO-, -CONH-, -NH-, -CH 2 O-, -N. (CH 3) -, - CON (CH 3) -, or -N (CH 3) CO- represents,
R 7 represents an alkylene group having 1 to 20 carbon atoms which is single-bonded, or unsubstituted or substituted with a fluorine atom, and one or more of any -CH 2- or -CF 2- of the alkylene group is independent of each other. May be replaced with a group selected from -CH = CH-, a divalent carbon ring, and a divalent heterocycle, and any of the following groups, namely -O-, -COO- , -OCO-, -NHCO-, -CONH-, or -NH- may be replaced by these groups, provided they are not adjacent to each other;
R 8 is represented by the following formula:
Represents a radical polymerization reactive group selected from.
(In formulas [X-1] to [X-14], * indicates a bonding site with a portion of the compound molecule other than the radical polymerization reactive group, and S 1 and S 2 are independently -O- and-, respectively. Represents NR- and -S-, R represents a hydrogen atom or an alkyl group having 1 to 4 carbon atoms, and R 12 represents a hydrogen atom, a halogen atom, an alkyl group having 1 to 10 carbon atoms, and 1 to 10 carbon atoms. Represents an alkoxy group, and R 1 and R 2 independently represent a hydrogen atom, a halogen atom, and an alkyl group having 1 to 4 carbon atoms).
式(6)における二つのアミノ基(−NH2)の結合位置は限定されない。具体的には、側鎖の結合基に対して、ベンゼン環上の2,3の位置、2,4の位置、2,5の位置、2,6の位置、3,4の位置、3,5の位置が挙げられる。なかでも、ポリアミック酸を合成する際の反応性の観点から、2,4の位置、2,5の位置、又は3,5の位置が好ましい。ジアミンを合成する際の容易性も加味すると、2,4の位置、又は3,5の位置がより好ましい。The bonding position of the two amino groups (-NH 2 ) in the formula (6) is not limited. Specifically, the positions 2, 3 and 2, 4 and 2, 5 and 2, 6 and 3, 4 and 3, 4 positions on the benzene ring with respect to the bonding group of the side chain. The position of 5 is mentioned. Of these, the 2,4 position, the 2,5 position, or the 3,5 position is preferable from the viewpoint of reactivity in synthesizing the polyamic acid. Considering the ease of synthesizing the diamine, the positions 2, 4 or 3, 5 are more preferable.
メタクリル基、アクリル基、ビニル基、アリル基、クマリン基、スチリル基及びシンナモイル基からなる群から選ばれる少なくとも1種を含む光反応性基を有するジアミンとしては、具体的には、以下のような化合物が挙げられるが、これらに限定されるものではない。
(式中、J1は単結合、−O−、−COO−、−NHCO−、又は−NH−より選ばれる結合基であり、J2は単結合、又は非置換もしくはフッ素原子によって置換されている炭素数1〜20のアルキレン基を表す。)Specific examples of the diamine having a photoreactive group containing at least one selected from the group consisting of a methacryl group, an acrylic group, a vinyl group, an allyl group, a coumarin group, a styryl group and a cinnamoyl group are as follows. Examples include, but are not limited to, compounds.
(In the formula, J 1 is a bonding group selected from a single bond, -O-, -COO-, -NHCO-, or -NH-, and J 2 is a single bond, or unsubstituted or substituted with a fluorine atom. Represents an alkylene group having 1 to 20 carbon atoms.)
紫外線照射により分解し、ラジカルが発生する部位を側鎖として有するジアミンは、下記の一般式(7)で表されるジアミンを挙げることができるが、これに限定されるものではない。
(式(7)中、T1及びT2は、それぞれ独立に、単結合、−O−、−S−、−COO−、−OCO−、−NHCO−、−CONH−、−NH−、−CH2O−、−N(CH3)−、−CON(CH3)−、又は−N(CH3)CO−であり、
Sは単結合、又は非置換もしくはフッ素原子によって置換されている炭素数1〜20のアルキレン基を表し、当該アルキレン基の任意の−CH2−又は−CF2−の1以上は、それぞれ独立に−CH=CH−、二価の炭素環、および二価の複素環から選ばれる基で置き換えられていてもよく、さらに、次に挙げるいずれかの基、すなわち、−O−、−COO−、−OCO−、−NHCO−、−CONH−、又は−NH−が互いに隣り合わないことを条件に、これらの基で置き換えられていてもよく、
Jは下記式で表される有機基であり、
(式[W]、[Y]、[Z]中、*はT2との結合箇所を表し、Arは有機基及び/又はハロゲン原子を置換基として有しても良いフェニレン、ナフチレン、及びビフェニレンからなる群より選ばれる芳香族炭化水素基を示し、R9及びR10は、それぞれ独立に、炭素数1〜10のアルキル基又は炭素数1〜10のアルコキシ基を表し、Qは下記のいずれかの構造を表す。
(式中、R11は−CH2−、−NR−、−O−、又は−S−を表し、Rは水素原子又は炭素原子数1〜4のアルキル基を表し、*は化合物分子のQ以外の部分との結合部位を示す。)
R12は水素原子、ハロゲン原子、炭素数1〜10のアルキル基又は炭素数1〜10のアルコキシ基を表す。))Examples of the diamine represented by the following general formula (7) include, but are not limited to, diamines that are decomposed by ultraviolet irradiation and have a site where radicals are generated as a side chain.
(In formula (7), T 1 and T 2 are independently single-bonded, -O-, -S-, -COO-, -OCO-, -NHCO-, -CONH-, -NH-,-. CH 2 O-, -N (CH 3 )-, -CON (CH 3 )-, or -N (CH 3 ) CO-
S represents an alkylene group having 1 to 20 carbon atoms which is single-bonded, or unsubstituted or substituted with a fluorine atom, and one or more of any -CH 2- or -CF 2- of the alkylene group is independent of each other. It may be replaced with a group selected from −CH = CH−, a divalent carbocycle, and a divalent heterocyclic ring, and any of the following groups, namely −O−, −COO−,. -OCO-, -NHCO-, -CONH-, or -NH- may be replaced by these groups provided they are not adjacent to each other.
J is an organic group represented by the following formula.
(In the formulas [W], [Y], and [Z], * represents the bonding site with T 2, and Ar represents phenylene, naphthylene, and biphenylene which may have an organic group and / or a halogen atom as a substituent. Indicates an aromatic hydrocarbon group selected from the group consisting of, R 9 and R 10 each independently represent an alkyl group having 1 to 10 carbon atoms or an alkoxy group having 1 to 10 carbon atoms, and Q is any of the following. Represents the structure.
(In the formula, R 11 represents -CH 2- , -NR-, -O-, or -S-, R represents a hydrogen atom or an alkyl group having 1 to 4 carbon atoms, and * represents Q of the compound molecule. Indicates the binding site with a part other than the above.)
R 12 represents a hydrogen atom, a halogen atom, an alkyl group having 1 to 10 carbon atoms, or an alkoxy group having 1 to 10 carbon atoms. )))
上記式(7)における二つのアミノ基(−NH2)の結合位置は限定されない。具体的には、側鎖の結合基に対して、ベンゼン環上の2,3の位置、2,4の位置、2,5の位置、2,6の位置、3,4の位置、3,5の位置が挙げられる。なかでも、ポリアミック酸を合成する際の反応性の観点から、2,4の位置、2,5の位置、又は3,5の位置が好ましい。ジアミンを合成する際の容易性も加味すると、2,4の位置、又は3,5の位置がより好ましい。The bonding position of the two amino groups (-NH 2 ) in the above formula (7) is not limited. Specifically, the positions 2, 3 and 2, 4 and 2, 5 and 2, 6 and 3, 4 and 3, 4 positions on the benzene ring with respect to the bonding group of the side chain. The position of 5 is mentioned. Of these, the 2,4 position, the 2,5 position, or the 3,5 position is preferable from the viewpoint of reactivity in synthesizing the polyamic acid. Considering the ease of synthesizing the diamine, the positions 2, 4 or 3, 5 are more preferable.
特に合成の容易さ、汎用性の高さ、特性などの点を鑑みて、下記式で表される構造が最も好ましいが、これらに限定されない。
(式中、nは2〜8の整数である。)In particular, in view of ease of synthesis, high versatility, characteristics, and the like, the structure represented by the following formula is most preferable, but the structure is not limited thereto.
(In the formula, n is an integer of 2-8.)
上記のジアミンは、ラジカル発生膜とした際の液晶配向性、重合反応における感度、電圧保持特性、蓄積電荷などの特性に応じて、1種類又は2種類以上を混合して使用することもできる。 The above diamine may be used alone or in combination of two or more depending on the liquid crystal orientation when the radical generating film is formed, the sensitivity in the polymerization reaction, the voltage holding property, the accumulated charge and the like.
このようなラジカル重合が発生する部位を有するジアミンは、ラジカル発生膜形成組成物に含有させる重合体の合成に用いるジアミン成分全体の5〜50モル%となる量を用いることが好ましく、より好ましくは10〜40モル%であり、特に好ましくは15〜30モル%である。 The amount of the diamine having a site where such radical polymerization occurs is preferably 5 to 50 mol% of the total diamine component used for synthesizing the polymer contained in the radical generation film forming composition, and more preferably. It is 10 to 40 mol%, particularly preferably 15 to 30 mol%.
なお、本発明のラジカル発生膜に用いる重合体をジアミンから得る場合、本発明の効果を損わない限りにおいて、上記ラジカルが発生する部位を有するジアミン以外の、その他のジアミンをジアミン成分として併用することができる。具体的には、例えば、p−フェニレンジアミン、2,3,5,6−テトラメチル−p−フェニレンジアミン、2,5−ジメチル−p−フェニレンジアミン、m−フェニレンジアミン、2,4−ジメチル−m−フェニレンジアミン、2,5−ジアミノトルエン、2,6−ジアミノトルエン、2,5−ジアミノフェノール、2,4−ジアミノフェノール、3,5−ジアミノフェノール、3,5−ジアミノベンジルアルコール、2,4−ジアミノベンジルアルコール、4,6−ジアミノレゾルシノール、4,4’−ジアミノビフェニル、3,3’−ジメチル−4,4’−ジアミノビフェニル、3,3’−ジメトキシ−4,4’−ジアミノビフェニル、3,3’−ジヒドロキシ−4,4’−ジアミノビフェニル、3,3’−ジカルボキシ−4,4’−ジアミノビフェニル、3,3’−ジフルオロ−4,4’−ビフェニル、3,3’−トリフルオロメチル−4,4’−ジアミノビフェニル、3,4’−ジアミノビフェニル、3,3’−ジアミノビフェニル、2,2’−ジアミノビフェニル、2,3’−ジアミノビフェニル、4,4’−ジアミノジフェニルメタン、3,3’−ジアミノジフェニルメタン、3,4’−ジアミノジフェニルメタン、2,2’−ジアミノジフェニルメタン、2,3’−ジアミノジフェニルメタン、4,4’−ジアミノジフェニルエーテル、3,3’−ジアミノジフェニルエーテル、3,4’−ジアミノジフェニルエーテル、2,2’−ジアミノジフェニルエーテル、2,3’−ジアミノジフェニルエーテル、4,4’−スルホニルジアニリン、3,3’−スルホニルジアニリン、ビス(4−アミノフェニル)シラン、ビス(3−アミノフェニル)シラン、ジメチル−ビス(4−アミノフェニル)シラン、ジメチル−ビス(3−アミノフェニル)シラン、4,4’−チオジアニリン、3,3’−チオジアニリン、4,4’−ジアミノジフェニルアミン、3,3’−ジアミノジフェニルアミン、3,4’−ジアミノジフェニルアミン、2,2’−ジアミノジフェニルアミン、2,3’−ジアミノジフェニルアミン、N−メチル(4,4’−ジアミノジフェニル)アミン、N−メチル(3,3’−ジアミノジフェニル)アミン、N−メチル(3,4’−ジアミノジフェニル)アミン、N−メチル(2,2’−ジアミノジフェニル)アミン、N−メチル(2,3’−ジアミノジフェニル)アミン、4,4’−ジアミノベンゾフェノン、3,3’−ジアミノベンゾフェノン、3,4’−ジアミノベンゾフェノン、1,4−ジアミノナフタレン、2,2’−ジアミノベンゾフェノン、2,3’−ジアミノベンゾフェノン、1,5−ジアミノナフタレン、1,6−ジアミノナフタレン、1,7−ジアミノナフタレン、1,8−ジアミノナフタレン、2,5−ジアミノナフタレン、2,6−ジアミノナフタレン、2,7−ジアミノナフタレン、2,8−ジアミノナフタレン、1,2−ビス(4−アミノフェニル)エタン、1,2−ビス(3−アミノフェニル)エタン、1,3−ビス(4−アミノフェニル)プロパン、1,3−ビス(3−アミノフェニル)プロパン、1,4−ビス(4アミノフェニル)ブタン、1,4−ビス(3−アミノフェニル)ブタン、ビス(3,5−ジエチル−4−アミノフェニル)メタン、1,4−ビス(4−アミノフェノキシ)ベンゼン、1,3−ビス(4−アミノフェノキシ)ベンゼン、1,4−ビス(4−アミノフェニル)ベンゼン、1,3−ビス(4−アミノフェニル)ベンゼン、1,4−ビス(4−アミノベンジル)ベンゼン、1,3−ビス(4−アミノフェノキシ)ベンゼン、4,4’−[1,4−フェニレンビス(メチレン)]ジアニリン、4,4’−[1,3−フェニレンビス(メチレン)]ジアニリン、3,4’−[1,4−フェニレンビス(メチレン)]ジアニリン、3,4’−[1,3−フェニレンビス(メチレン)]ジアニリン、3,3’−[1,4−フェニレンビス(メチレン)]ジアニリン、3,3’−[1,3−フェニレンビス(メチレン)]ジアニリン、1,4−フェニレンビス[(4−アミノフェニル)メタノン]、1,4−フェニレンビス[(3−アミノフェニル)メタノン]、1,3−フェニレンビス[(4−アミノフェニル)メタノン]、1,3−フェニレンビス[(3−アミノフェニル)メタノン]、1,4−フェニレンビス(4−アミノベンゾエート)、1,4−フェニレンビス(3−アミノベンゾエート)、1,3−フェニレンビス(4−アミノベンゾエート)、1,3−フェニレンビス(3−アミノベンゾエート)、ビス(4−アミノフェニル)テレフタレート、ビス(3−アミノフェニル)テレフタレート、ビス(4−アミノフェニル)イソフタレート、ビス(3−アミノフェニル)イソフタレート、N,N’−(1,4−フェニレン)ビス(4−アミノベンズアミド)、N,N’−(1,3−フェニレン)ビス(4−アミノベンズアミド)、N,N’−(1,4−フェニレン)ビス(3−アミノベンズアミド)、N,N’−(1,3−フェニレン)ビス(3−アミノベンズアミド)、N,N’−ビス(4−アミノフェニル)テレフタルアミド、N,N’−ビス(3−アミノフェニル)テレフタルアミド、N,N’−ビス(4−アミノフェニル)イソフタルアミド、N,N’−ビス(3−アミノフェニル)イソフタルアミド、9,10−ビス(4−アミノフェニル)アントラセン、4,4’−ビス(4−アミノフェノキシ)ジフェニルスルホン、2,2’−ビス[4−(4−アミノフェノキシ)フェニル]プロパン、2,2’−ビス[4−(4−アミノフェノキシ)フェニル]ヘキサフルオロプロパン、2,2’−ビス(4−アミノフェニル)ヘキサフルオロプロパン、2,2’−ビス(3−アミノフェニル)ヘキサフルオロプロパン、2,2’−ビス(3−アミノ−4−メチルフェニル)ヘキサフルオロプロパン、2,2’−ビス(4−アミノフェニル)プロパン、2,2’−ビス(3−アミノフェニル)プロパン、2,2’−ビス(3−アミノ−4−メチルフェニル)プロパン、トランス−1,4−ビス(4−アミノフェニル)シクロヘキサン、3,5−ジアミノ安息香酸、2,5−ジアミノ安息香酸、ビス(4−アミノフェノキシ)メタン、1,2−ビス(4−アミノフェノキシ)エタン、1,3−ビス(4−アミノフェノキシ)プロパン、1,3−ビス(3−アミノフェノキシ)プロパン、1,4−ビス(4−アミノフェノキシ)ブタン、1,4−ビス(3−アミノフェノキシ)ブタン、1,5−ビス(4−アミノフェノキシ)ペンタン、1,5−ビス(3−アミノフェノキシ)ペンタン、1,6−ビス(4−アミノフェノキシ)へキサン、1,6−ビス(3−アミノフェノキシ)へキサン、1,7−ビス(4−アミノフェノキシ)ヘプタン、1,7−ビス(3−アミノフェノキシ)ヘプタン、1,8−ビス(4−アミノフェノキシ)オクタン、1,8−ビス(3−アミノフェノキシ)オクタン、1,9−ビス(4−アミノフェノキシ)ノナン、1,9−ビス(3−アミノフェノキシ)ノナン、1,10−ビス(4−アミノフェノキシ)デカン、1,10−ビス(3−アミノフェノキシ)デカン、1,11−ビス(4−アミノフェノキシ)ウンデカン、1,11−ビス(3−アミノフェノキシ)ウンデカン、1,12−ビス(4−アミノフェノキシ)ドデカン、1,12−ビス(3−アミノフェノキシ)ドデカンなどの芳香族ジアミン;ビス(4−アミノシクロヘキシル)メタン、ビス(4−アミノ−3−メチルシクロヘキシル)メタンなどの脂環式ジアミン;1,3−ジアミノプロパン、1,4−ジアミノブタン、1,5−ジアミノペンタン、1,6−ジアミノへキサン、1,7−ジアミノヘプタン、1,8−ジアミノオクタン、1,9−ジアミノノナン、1,10−ジアミノデカン、1,11−ジアミノウンデカン、1,12−ジアミノドデカンなどの脂肪族ジアミン;1,3−ビス[2−(p−アミノフェニル)エチル]ウレア、1,3−ビス[2−(p−アミノフェニル)エチル]−1−ターシャリーブチルオキシカルボニルウレア等のウレア構造を有するジアミン;N−p−アミノフェニル−4−p−アミノフェニル(ターシャリーブチルオキシカルボニル)アミノメチルピペリジン等の含窒素不飽和複素環構造を有するジアミン;N−ターシャリーブトキシカルボニル−N−(2−(4−アミノフェニル)エチル)−N−(4−アミノベンジル)アミン等のN−Boc基を有するジアミン等が挙げられる。 When the polymer used for the radical generation film of the present invention is obtained from a diamine, other diamines other than the diamine having a site where the radical is generated are used in combination as a diamine component as long as the effect of the present invention is not impaired. be able to. Specifically, for example, p-phenylenediamine, 2,3,5,6-tetramethyl-p-phenylenediamine, 2,5-dimethyl-p-phenylenediamine, m-phenylenediamine, 2,4-dimethyl- m-phenylenediamine, 2,5-diaminotoluene, 2,6-diaminotoluene, 2,5-diaminophenol, 2,4-diaminophenol, 3,5-diaminophenol, 3,5-diaminobenzyl alcohol, 2, 4-Diaminobenzyl alcohol, 4,6-diaminoresorcinol, 4,4'-diaminobiphenyl, 3,3'-dimethyl-4,4'-diaminobiphenyl, 3,3'-dimethoxy-4,4'-diaminobiphenyl , 3,3'-dihydroxy-4,4'-diaminobiphenyl, 3,3'-dicarboxy-4,4'-diaminobiphenyl, 3,3'-difluoro-4,4'-biphenyl, 3,3' -Trifluoromethyl-4,4'-diaminobiphenyl, 3,4'-diaminobiphenyl, 3,3'-diaminobiphenyl, 2,2'-diaminobiphenyl, 2,3'-diaminobiphenyl, 4,4'- Diaminodiphenylmethane, 3,3'-diaminodiphenylmethane, 3,4'-diaminodiphenylmethane, 2,2'-diaminodiphenylmethane, 2,3'-diaminodiphenylmethane, 4,4'-diaminodiphenyl ether, 3,3'-diaminodiphenyl ether , 3,4'-diaminodiphenyl ether, 2,2'-diaminodiphenyl ether, 2,3'-diaminodiphenyl ether, 4,4'-sulfonyldianiline, 3,3'-sulfonyldianiline, bis (4-aminophenyl) Silane, bis (3-aminophenyl) silane, dimethyl-bis (4-aminophenyl) silane, dimethyl-bis (3-aminophenyl) silane, 4,4'-thiodianiline, 3,3'-thiodianiline, 4,4 ′ -Diaminodiphenylamine, 3,3′-diaminodiphenylamine, 3,4′-diaminodiphenylamine, 2,2′-diaminodiphenylamine, 2,3′-diaminodiphenylamine, N-methyl (4,4′-diaminodiphenyl) amine , N-methyl (3,3'-diaminodiphenyl) amine, N-methyl (3,4'-diaminodiphenyl) amine, N-methyl (2,2'-diaminodiphenyl) amine, N-methyl (2,3) '-Diaminodiphenyl) amine, 4,4'-diamino Benzenephenone, 3,3'-diaminobenzophenone, 3,4'-diaminobenzophenone, 1,4-diaminonaphthalene, 2,2'-diaminobenzophenone, 2,3'-diaminobenzophenone, 1,5-diaminonaphthalene, 1, 6-Diaminonaphthalene, 1,7-diaminonaphthalene, 1,8-diaminonaphthalene, 2,5-diaminonaphthalene, 2,6-diaminonaphthalene, 2,7-diaminonaphthalene, 2,8-diaminonaphthalene, 1,2 -Bis (4-aminophenyl) ethane, 1,2-bis (3-aminophenyl) ethane, 1,3-bis (4-aminophenyl) propane, 1,3-bis (3-aminophenyl) propane, 1 , 4-bis (4 aminophenyl) butane, 1,4-bis (3-aminophenyl) butane, bis (3,5-diethyl-4-aminophenyl) methane, 1,4-bis (4-aminophenoxy) Benzene, 1,3-bis (4-aminophenoxy) benzene, 1,4-bis (4-aminophenyl) benzene, 1,3-bis (4-aminophenyl) benzene, 1,4-bis (4-amino) Benzene) Benzene, 1,3-bis (4-aminophenoxy) benzene, 4,4'-[1,4-phenylenebis (methylene)] dianiline, 4,4'-[1,3-phenylenebis (methylene)) ] Dianiline, 3,4'-[1,4-phenylenebis (methylene)] dianiline, 3,4'-[1,3-phenylenebis (methylene)] dianiline, 3,3'-[1,4-phenylene Bis (methylene)] dianiline, 3,3'-[1,3-phenylenebis (methylene)] dianiline, 1,4-phenylenebis [(4-aminophenyl) metanone], 1,4-phenylenebis [(3) -Aminophenyl) methanone], 1,3-phenylenebis [(4-aminophenyl) methanone], 1,3-phenylenebis [(3-aminophenyl) methanone], 1,4-phenylenebis (4-aminobenzoate) ), 1,4-Phenylenebis (3-aminobenzoate), 1,3-phenylenebis (4-aminobenzoate), 1,3-phenylenebis (3-aminobenzoate), bis (4-aminophenyl) terephthalate, Bis (3-aminophenyl) terephthalate, bis (4-aminophenyl) isophthalate, bis (3-aminophenyl) isophthalate, N, N'-(1,4-phenylene) bis (4-aminobenzamide) ), N, N'-(1,3-phenylene) bis (4-aminobenzamide), N, N'-(1,4-phenylene) bis (3-aminobenzamide), N, N'-(1, 3-Phenyl) bis (3-aminobenzamide), N, N'-bis (4-aminophenyl) terephthalamide, N, N'-bis (3-aminophenyl) terephthalamide, N, N'-bis (4) -Aminophenyl) isophthalamide, N, N'-bis (3-aminophenyl) isophthalamide, 9,10-bis (4-aminophenyl) anthracene, 4,4'-bis (4-aminophenoxy) diphenylsulfone, 2,2'-bis [4- (4-aminophenoxy) phenyl] propane, 2,2'-bis [4- (4-aminophenoxy) phenyl] hexafluoropropane, 2,2'-bis (4-amino) Phenyl) hexafluoropropane, 2,2'-bis (3-aminophenyl) hexafluoropropane, 2,2'-bis (3-amino-4-methylphenyl) hexafluoropropane, 2,2'-bis (4) -Aminophenyl) propane, 2,2'-bis (3-aminophenyl) propane, 2,2'-bis (3-amino-4-methylphenyl) propane, trans-1,4-bis (4-aminophenyl) ) Cyclohexane, 3,5-diaminobenzoic acid, 2,5-diaminobenzoic acid, bis (4-aminophenoxy) methane, 1,2-bis (4-aminophenoxy) ethane, 1,3-bis (4-amino) Phenoxy) propane, 1,3-bis (3-aminophenoxy) propane, 1,4-bis (4-aminophenoxy) butane, 1,4-bis (3-aminophenoxy) butane, 1,5-bis (4) -Aminophenoxy) pentane, 1,5-bis (3-aminophenoxy) pentane, 1,6-bis (4-aminophenoxy) hexane, 1,6-bis (3-aminophenoxy) hexane, 1,7 -Bis (4-aminophenoxy) heptane, 1,7-bis (3-aminophenoxy) heptane, 1,8-bis (4-aminophenoxy) octane, 1,8-bis (3-aminophenoxy) octane, 1 , 9-bis (4-aminophenoxy) nonane, 1,9-bis (3-aminophenoxy) nonane, 1,10-bis (4-aminophenoxy) decane, 1,10-bis (3-aminophenoxy) decane , 1,11-bis (4-aminophenoxy) undecane, 1,11-bis (3-amino) Aromatic amines such as phenoxy) undecane, 1,12-bis (4-aminophenoxy) dodecane, 1,12-bis (3-aminophenoxy) dodecane; bis (4-aminocyclohexyl) methane, bis (4-amino- Alicyclic diamines such as 3-methylcyclohexyl) methane; 1,3-diaminopropane, 1,4-diaminobutane, 1,5-diaminopentane, 1,6-diaminohexane, 1,7-diaminoheptane, 1, , 8-Diaminooctane, 1,9-diaminononane, 1,10-diaminodecane, 1,11-diaminoundecane, 1,12-diaminododecane and other aliphatic diamines; 1,3-bis [2- (p-amino) Diamine having a urea structure such as phenyl) ethyl] urea and 1,3-bis [2- (p-aminophenyl) ethyl] -1-tersary butyloxycarbonyl urea; N-p-aminophenyl-4-p- Amine having a nitrogen-containing unsaturated heterocyclic structure such as aminophenyl (tershally butyloxycarbonyl) aminomethylpiperidin; N-tersary butoxycarbonyl-N- (2- (4-aminophenyl) ethyl) -N- (4) Examples thereof include diamines having an N-Boc group such as −aminobenzyl) amine.
上記その他のジアミンは、ラジカル発生膜とした際の液晶配向性、重合反応における感度、電圧保持特性、蓄積電荷などの特性に応じて、1種類又は2種類以上を混合して使用することもできる。 The other diamines may be used alone or in combination of two or more depending on the liquid crystal orientation when the radical generating film is formed, the sensitivity in the polymerization reaction, the voltage holding property, the accumulated charge, and the like. ..
重合体がポリアミック酸である場合の合成で、上記のジアミン成分と反応させるテトラカルボン酸二無水物は特に限定されない。具体的には、ピロメリット酸、2,3,6,7−ナフタレンテトラカルボン酸、1,2,5,6−ナフタレンテトラカルボン酸、1,4,5,8−ナフタレンテトラカルボン酸、2,3,6,7−アントラセンテトラカルボン酸、1,2,5,6−アントラセンテトラカルボン酸、3,3’,4,4’−ビフェニルテトラカルボン酸、2,3,3’,4’−ビフェニルテトラカルボン酸、ビス(3,4−ジカルボキシフェニル)エーテル、3,3’,4,4’−ベンゾフェノンテトラカルボン酸、ビス(3,4−ジカルボキシフェニル)スルホン、ビス(3,4−ジカルボキシフェニル)メタン、2,2−ビス(3,4−ジカルボキシフェニル)プロパン、1,1,1,3,3,3−ヘキサフルオロ−2,2−ビス(3,4−ジカルボキシフェニル)プロパン、ビス(3,4−ジカルボキシフェニル)ジメチルシラン、ビス(3,4−ジカルボキシフェニル)ジフェニルシラン、2,3,4,5−ピリジンテトラカルボン酸、2,6−ビス(3,4−ジカルボキシフェニル)ピリジン、3,3’,4,4’−ジフェニルスルホンテトラカルボン酸、3,4,9,10−ペリレンテトラカルボン酸、1,3−ジフェニル−1,2,3,4−シクロブタンテトラカルボン酸、オキシジフタルテトラカルボン酸、1,2,3,4−シクロブタンテトラカルボン酸、1,2,3,4−シクロペンタンテトラカルボン酸、1,2,4,5−シクロヘキサンテトラカルボン酸、1,2,3,4−テトラメチル−1,2,3,4−シクロブタンテトラカルボン酸、1,2−ジメチル−1,2,3,4−シクロブタンテトラカルボン酸、1,3−ジメチル−1,2,3,4−シクロブタンテトラカルボン酸、1,2,3,4−シクロヘプタンテトラカルボン酸、2,3,4,5−テトラヒドロフランテトラカルボン酸、3,4−ジカルボキシ−1−シクロへキシルコハク酸、2,3,5−トリカルボキシシクロペンチル酢酸、3,4−ジカルボキシ−1,2,3,4−テトラヒドロ−1−ナフタレンコハク酸、ビシクロ[3,3,0]オクタン−2,4,6,8−テトラカルボン酸、ビシクロ[4,3,0]ノナン−2,4,7,9−テトラカルボン酸、ビシクロ[4,4,0]デカン−2,4,7,9−テトラカルボン酸、ビシクロ[4,4,0]デカン−2,4,8,10−テトラカルボン酸、トリシクロ[6.3.0.0<2,6>]ウンデカン−3,5,9,11−テトラカルボン酸、1,2,3,4−ブタンテトラカルボン酸、4−(2,5−ジオキソテトラヒドロフラン−3−イル)−1,2,3,4−テトラヒドリナフタレン−1,2−ジカルボン酸、ビシクロ[2,2,2]オクト−7−エン−2,3,5,6−テトラカルボン酸、5−(2,5−ジオキソテトラヒドロフリル)−3−メチル−3−シクロへキサン−1,2−ジカルボン酸、テトラシクロ[6,2,1,1,0<2,7>]ドデカ−4,5,9,10−テトラカルボン酸、3,5,6−トリカルボキシノルボルナン−2:3,5:6ジカルボン酸、1,2,4,5−シクロヘキサンテトラカルボン酸等のテトラカルボン酸の二無水物が挙げられる。 The tetracarboxylic dianhydride to be reacted with the above diamine component in the synthesis when the polymer is a polyamic acid is not particularly limited. Specifically, pyromellitic acid, 2,3,6,7-naphthalenetetracarboxylic acid, 1,2,5,6-naphthalenetetracarboxylic acid, 1,4,5,8-naphthalenetetracarboxylic acid, 2, 3,6,7-anthracene tetracarboxylic acid, 1,2,5,6-anthracene tetracarboxylic acid, 3,3', 4,4'-biphenyltetracarboxylic acid, 2,3,3', 4'-biphenyl Tetracarboxylic acid, bis (3,4-dicarboxyphenyl) ether, 3,3', 4,4'-benzophenone tetracarboxylic acid, bis (3,4-dicarboxyphenyl) sulfone, bis (3,4-dicarboxyphenyl) Carboxyphenyl) methane, 2,2-bis (3,4-dicarboxyphenyl) propane, 1,1,1,3,3,3-hexafluoro-2,2-bis (3,4-dicarboxyphenyl) Propane, bis (3,4-dicarboxyphenyl) dimethylsilane, bis (3,4-dicarboxyphenyl) diphenylsilane, 2,3,4,5-pyridinetetracarboxylic acid, 2,6-bis (3,4) -Dicarboxyphenyl) pyridine, 3,3', 4,4'-diphenylsulfonetetracarboxylic acid, 3,4,9,10-perylenetetracarboxylic acid, 1,3-diphenyl-1,2,3,4- Cyclobutanetetracarboxylic acid, oxydiphthaltetracarboxylic acid, 1,2,3,4-cyclobutanetetracarboxylic acid, 1,2,3,4-cyclopentanetetracarboxylic acid, 1,2,4,5-cyclohexanetetracarboxylic acid Acid, 1,2,3,4-tetramethyl-1,2,3,4-cyclobutanetetracarboxylic acid, 1,2-dimethyl-1,2,3,4-cyclobutanetetracarboxylic acid, 1,3-dimethyl -1,2,3,4-cyclobutanetetracarboxylic acid, 1,2,3,4-cycloheptanetetracarboxylic acid, 2,3,4,5-tetracarboxylic acid, 3,4-dicarboxy-1- Cyclohexyl succinic acid, 2,3,5-tricarboxycyclopentylacetic acid, 3,4-dicarboxy-1,2,3,4-tetrahydro-1-naphthalen succinic acid, bicyclo [3,3,0] octane-2 , 4,6,8-Tetracarboxylic Acid, Bicyclo [4,3,0] Nonan-2,4,7,9-Tetracarboxylic Acid, Bicyclo [4,4,0] Decane-2,4,7,9 -Tetracarboxylic acid, bicyclo [4,4,0] decan-2,4,8,10-tetracarboxylic acid, tricyclo [6.3.0.0 <2,6>] Undecane-3,5,9,11-tetracarboxylic acid, 1,2,3,4-butanetetracarboxylic acid, 4- (2,5-dioxo tetrahydrofuran-3-yl) -1,2,3,4 -Tetrahydrinaphthalene-1,2-dicarboxylic acid, bicyclo [2,2,2] octo-7-ene-2,3,5,6-tetracarboxylic acid, 5- (2,5-dioxotetrahydrofuryl) -3-Methyl-3-cyclohexane-1,2-dicarboxylic acid, tetracyclo [6,2,1,1,0 <2,7>] dodeca-4,5,9,10-tetracarboxylic acid, 3 , 5,6-Tricarboxynorbornane-2: 3,5: 6 dicarboxylic acid, 1,2,4,5-cyclohexanetetracarboxylic acid and other tetracarboxylic acid dianhydrides.
勿論、テトラカルボン酸二無水物も、ラジカル発生膜とした際の液晶配向性、重合反応における感度、電圧保持特性、蓄積電荷などの特性に応じて、1種類又は2種類以上併用してもよい。 Of course, one or two or more types of tetracarboxylic dianhydride may be used in combination depending on the liquid crystal orientation when the radical generating film is formed, the sensitivity in the polymerization reaction, the voltage holding characteristic, the accumulated charge, and the like. ..
重合体がポリアミド酸エステルである場合の合成で、上記のジアミン成分と反応させるテトラカルボン酸ジアルキルエステルの構造は特に限定されないが、その具体例を以下に挙げる。
脂肪族テトラカルボン酸ジエステルの具体的な例としては1,2,3,4−シクロブタンテトラカルボン酸ジアルキルエステル、1,2−ジメチル−1,2,3,4−シクロブタンテトラカルボン酸ジアルキルエステル、1,3−ジメチル−1,2,3,4−シクロブタンテトラカルボン酸ジアルキルエステル、1,2,3,4−テトラメチル−1,2,3,4−シクロブタンテトラカルボン酸ジアルキルエステル、1,2,3,4−シクロペンタンテトラカルボン酸ジアルキルエステル、2,3,4,5−テトラヒドロフランテトラカルボン酸ジアルキルエステル、1,2,4,5−シクロヘキサンテトラカルボン酸ジアルキルエステル、3,4−ジカルボキシ−1−シクロヘキシルコハク酸ジアルキルエステル、3,4−ジカルボキシ−1,2,3,4−テトラヒドロ−1−ナフタレンコハク酸ジアルキルエステル、1,2,3,4−ブタンテトラカルボン酸ジアルキルエステル、ビシクロ[3,3,0]オクタン−2,4,6,8−テトラカルボン酸ジアルキルエステル、3,3’,4,4’−ジシクロヘキシルテトラカルボン酸ジアルキルエステル、2,3,5−トリカルボキシシクロペンチル酢酸ジアルキルエステル、シス−3,7−ジブチルシクロオクタ−1,5−ジエン−1,2,5,6−テトラカルボン酸ジアルキルエステル、トリシクロ[4.2.1.0<2,5>]ノナン−3,4,7,8−テトラカルボン酸−3,4:7,8−ジアルキルエステル、ヘキサシクロ[6.6.0.1<2,7>.0<3,6>.1<9,14>.0<10,13>]ヘキサデカン−4,5,11,12−テトラカルボン酸−4,5:11,12−ジアルキルエステル、4−(2,5−ジオキソテトラヒドロフラン−3−イル)−1,2,3,4−テトラヒドロナフタレンー1,2−ジカルボンジアルキルエステルなどが挙げられる。The structure of the tetracarboxylic diandialkyl ester to be reacted with the above diamine component in the synthesis when the polymer is a polyamic acid ester is not particularly limited, and specific examples thereof will be given below.
Specific examples of the aliphatic tetracarboxylic acid diester include 1,2,3,4-cyclobutanetetracarboxylic acid dialkyl ester, 1,2-dimethyl-1,2,3,4-cyclobutanetetracarboxylic acid dialkyl ester, 1 , 3-Dimethyl-1,2,3,4-cyclobutanetetracarboxylic acid dialkyl ester, 1,2,3,4-tetramethyl-1,2,3,4-cyclobutanetetracarboxylic acid dialkyl ester, 1,2, 3,4-Cyclopentanetetracarboxylic acid dialkyl ester, 2,3,4,5- tetrahydrofuran tetracarboxylic acid dialkyl ester, 1,2,4,5-cyclohexanetetracarboxylic acid dialkyl ester, 3,4-dicarboxy-1 -Cyclohexylsuccinic acid dialkyl ester, 3,4-dicarboxy-1,2,3,4-tetrahydro-1-naphthalene succinic acid dialkyl ester, 1,2,3,4-butanetetracarboxylic acid dialkyl ester, bicyclo [3] , 3,0] Octane-2,4,6,8-tetracarboxylic acid dialkyl ester, 3,3', 4,4'-dicyclohexyltetracarboxylic acid dialkyl ester, 2,3,5-tricarboxycyclopentyl acetate dialkyl ester , Sis-3,7-dibutylcycloocta-1,5-diene-1,2,5,6-tetracarboxylic acid dialkyl ester, tricyclo [4.2.1.0 <2,5>] Nonan-3, 4,7,8-Tetracarboxylic acid-3,4: 7,8-dialkyl ester, hexacyclo [6.6.0.1 <2,7>. 0 <3,6>. 1 <9,14>. 0 <10,13>] Hexadecane-4,5,11,12-tetracarboxylic acid-4,5:11,12-dialkylester, 4- (2,5-dioxotetrahydrofuran-3-yl) -1, Examples thereof include 2,3,4-tetrahydronaphthalene-1,2-dicarboxylic dialkyl ester.
芳香族テトラカルボン酸ジアルキルエステルとしては、ピロメリット酸ジアルキルエステル、3,3’,4,4’−ビフェニルテトラカルボン酸ジアルキルエステル、2,2’,3,3’−ビフェニルテトラカルボン酸ジアルキルエステル、2,3,3’,4−ビフェニルテトラカルボン酸ジアルキルエステル、3,3’,4,4’−ベンゾフェノンテトラカルボン酸ジアルキルエステル、2,3,3’,4’−ベンゾフェノンテトラカルボン酸ジアルキルエステル、ビス(3,4−ジカルボキシフェニル)エーテルジアルキルエステル、ビス(3,4−ジカルボキシフェニル)スルホンジアルキルエステル、1,2,5,6−ナフタレンテトラカルボン酸ジアルキルエステル、2,3,6,7−ナフタレンテトラカルボン酸ジアルキルエステルなどが挙げられる。 Examples of the aromatic tetracarboxylic acid dialkyl ester include pyromellitic acid dialkyl ester, 3,3', 4,4'-biphenyltetracarboxylic acid dialkyl ester, 2,2', 3,3'-biphenyltetracarboxylic acid dialkyl ester, and the like. 2,3,3', 4-biphenyltetracarboxylic acid dialkyl ester, 3,3', 4,4'-benzophenone tetracarboxylic acid dialkyl ester, 2,3,3', 4'-benzophenone tetracarboxylic acid dialkyl ester, Bis (3,4-dicarboxyphenyl) ether dialkyl ester, bis (3,4-dicarboxyphenyl) sulfone dialkyl ester, 1,2,5,6-naphthalenetetracarboxylic acid dialkyl ester, 2,3,6,7 − Naphthalene tetracarboxylic acid dialkyl ester and the like.
重合体がポリウレアである場合の合成で、上記のジアミン成分と反応させるジイソシアネートに関しては、特に限定はせず、入手性等に応じて使用することができる。ジイソシアネートの具体的構造を以下に示す。
式中R22、R33は炭素数1〜10の脂肪族炭化水素を表す。The diisocyanate to be reacted with the above diamine component in the synthesis when the polymer is polyurea is not particularly limited and can be used depending on availability and the like. The specific structure of diisocyanate is shown below.
In the formula, R 22 and R 33 represent aliphatic hydrocarbons having 1 to 10 carbon atoms.
K−1〜K−5に示す脂肪族ジイソシアネートは、反応性は劣るが溶媒溶解性を向上させるメリットがあり、K−6〜K−7の示すような芳香族ジイソシアネートは反応性に富み耐熱性を向上させる効果があるが、溶媒溶解性を低下させる欠点が挙げられる。汎用性や特性面において特に好ましくはK−1、K−7、K−8、K−9、K−10が好ましく、電気特性の加点ではK−12、液晶配向性の観点ではK−13が特に好ましい。ジイソシアネートは1種以上を併用して使用することもでき、得たい特性に応じて種々適用するのが好ましい。
また、一部のジイソシアネートを上記で説明したテトラカルボン酸二無水物に置き換えることもでき、ポリアミック酸とポリウレアの共重合体のような形で使用しても良く、化学イミド化によってポリイミドとポリウレアの共重合体のような形で使用しても良い。The aliphatic diisocyanates shown in K-1 to K-5 are inferior in reactivity but have the advantage of improving solvent solubility, and the aromatic diisocyanates shown in K-6 to K-7 are highly reactive and heat resistant. However, there is a drawback that the solvent solubility is lowered. K-1, K-7, K-8, K-9, and K-10 are particularly preferable in terms of versatility and characteristics, K-12 is preferable in terms of electrical characteristics, and K-13 is preferable in terms of liquid crystal orientation. Especially preferable. One or more kinds of diisocyanates can be used in combination, and it is preferable to apply various diisocyanates according to the desired characteristics.
In addition, some diisocyanates can be replaced with the tetracarboxylic acid dianhydride described above, and may be used in the form of a copolymer of polyamic acid and polyurea, and the polyimide and polyurea can be chemically imidized. It may be used in the form of a copolymer.
重合体がポリアミドである場合の合成で、反応させるジカルボン酸の構造は特に限定されないが、あえて具体例を以下に挙げれば以下のとおりである。脂肪族ジカルボン酸の具体例として、マロン酸、蓚酸、ジメチルマロン酸、コハク酸、フマル酸、グルタル酸、アジピン酸、ムコン酸、2−メチルアジピン酸、トリメチルアジピン酸、ピメリン酸、2,2−ジメチルグルタル酸、3,3−ジエチルコハク酸、アゼライイン酸、セバシン酸およびスベリン酸等のジカルボン酸を挙げることができる。 The structure of the dicarboxylic acid to be reacted in the synthesis when the polymer is polyamide is not particularly limited, but specific examples are as follows. Specific examples of aliphatic dicarboxylic acids include malonic acid, suberic acid, dimethylmalonic acid, succinic acid, fumaric acid, glutaric acid, adipic acid, muconic acid, 2-methyladipic acid, trimethyladic acid, pimelic acid, 2,2-. Dicarboxylic acids such as dimethylglutaric acid, 3,3-diethylsuccinic acid, adipic acid, sebacic acid and suberic acid can be mentioned.
脂環式系のジカルボン酸としては、1,1−シクロプロパンジカルボン酸、1,2−シクロプロパンジカルボン酸、1,1−シクロブタンジカルボン酸、1,2−シクロブタンジカルボン酸、1,3−シクロブタンジカルボン酸、3,4−ジフェニル−1,2−シクロブタンジカルボン酸、2,4−ジフェニル−1,3−シクロブタンジカルボン酸、1−シクロブテン−1,2−ジカルボン酸、1−シクロブテン−3,4−ジカルボン酸、1,1−シクロペンタンジカルボン酸、1,2−シクロペンタンジカルボン酸、1,3−シクロペンタンジカルボン酸、1,1−シクロヘキサンジカルボン酸、1,2−シクロヘキサンジカルボン酸、1,3−シクロヘキサンジカルボン酸、1,4−シクロヘキサンジカルボン酸、1,4−(2−ノルボルネン)ジカルボン酸、ノルボルネン−2,3−ジカルボン酸、ビシクロ[2.2.2]オクタン−1,4−ジカルボン酸、ビシクロ[2.2.2]オクタン−2,3−ジカルボン酸、2,5−ジオキソ−1,4−ビシクロ[2.2.2]オクタンジカルボン酸、1,3−アダマンタンジカルボン酸、4,8−ジオキソ−1,3−アダマンタンジカルボン酸、2,6−スピロ[3.3]ヘプタンジカルボン酸、1,3−アダマンタン二酢酸、カンファー酸等を挙げることができる。 Examples of the alicyclic dicarboxylic acid include 1,1-cyclopropanedicarboxylic acid, 1,2-cyclopropanedicarboxylic acid, 1,1-cyclobutanedicarboxylic acid, 1,2-cyclobutanedicarboxylic acid, and 1,3-cyclobutanedicarboxylic acid. Acid, 3,4-diphenyl-1,2-cyclobutanedicarboxylic acid, 2,4-diphenyl-1,3-cyclobutanedicarboxylic acid, 1-cyclobutene-1,2-dicarboxylic acid, 1-cyclobutene-3,4-dicarboxylic acid Acid, 1,1-cyclopentanedicarboxylic acid, 1,2-cyclopentanedicarboxylic acid, 1,3-cyclopentanedicarboxylic acid, 1,1-cyclohexanedicarboxylic acid, 1,2-cyclohexanedicarboxylic acid, 1,3-cyclohexane Dicarboxylic acid, 1,4-cyclohexanedicarboxylic acid, 1,4- (2-norbornene) dicarboxylic acid, norbornene-2,3-dicarboxylic acid, bicyclo [2.2.2] octane-1,4-dicarboxylic acid, bicyclo [2.2.2] Octane-2,3-dicarboxylic acid, 2,5-dioxo-1,4-bicyclo [2.2.2] Octanedicarboxylic acid, 1,3-adamantandicarboxylic acid, 4,8- Examples thereof include dioxo-1,3-adamantandicarboxylic acid, 2,6-spiro [3.3] heptanedicarboxylic acid, 1,3-adamantandiacetic acid, and camphoric acid.
芳香族ジカルボン酸としては、o−フタル酸、イソフタル酸、テレフタル酸、5−メチルイソフタル酸、5−tert−ブチルイソフタル酸、5−アミノイソフタル酸、5−ヒドロキシイソフタル酸、2,5−ジメチルテレフタル酸、テトラメチルテレフタル酸、1,4−ナフタレンジカルボン酸、2,5−ナフタレンジカルボン酸、2,6−ナフタレンジカルボン酸、2,7−ナフタレンジカルボン酸、1,4−アントラセンジカルボン酸、1,4−アントラキノンジカルボン酸、2,5−ビフェニルジカルボン酸、4,4’−ビフェニルジカルボン酸、1,5−ビフェニレンジカルボン酸、4,4”−ターフェニルジカルボン酸、4,4’−ジフェニルメタンジカルボン酸、4,4’−ジフェニルエタンジカルボン酸、4,4’−ジフェニルプロパンジカルボン酸、4,4’−ジフェニルヘキサフルオロプロパンジカルボン酸、4,4’−ジフェニルエーテルジカルボン酸、4,4’−ビベンジルジカルボン酸、4,4’−スチルベンジカルボン酸、4,4’−トランジカルボン酸、4,4’−カルボニル二安息香酸、4,4’−スルホニル二安息香酸、4,4’−ジチオ二安息香酸、p−フェニレン二酢酸、3,3’−p−フェニレンジプロピオン酸、4−カルボキシ桂皮酸、p−フェニレンジアクリル酸、3,3’−[4,4’−(メチレンジ−p−フェニレン)]ジプロピオン酸、4,4’−[4,4’−(オキシジ−p−フェニレン)]ジプロピオン酸、4,4’−[4,4’−(オキシジ−p−フェニレン)]二酪酸、(イソプロピリデンジ−p−フェニレンジオキシ)二酪酸、ビス(p−カルボキシフェニル)ジメチルシラン等のジカルボン酸を挙げることができる。 Examples of aromatic dicarboxylic acids include o-phthalic acid, isophthalic acid, terephthalic acid, 5-methylisophthalic acid, 5-tert-butylisophthalic acid, 5-aminoisophthalic acid, 5-hydroxyisophthalic acid, and 2,5-dimethylterephthalic acid. Acid, tetramethylterephthalic acid, 1,4-naphthalenedicarboxylic acid, 2,5-naphthalenedicarboxylic acid, 2,6-naphthalenedicarboxylic acid, 2,7-naphthalenedicarboxylic acid, 1,4-anthracendicarboxylic acid, 1,4 -Anthracinone dicarboxylic acid, 2,5-biphenyldicarboxylic acid, 4,4'-biphenyldicarboxylic acid, 1,5-biphenylenedicarboxylic acid, 4,4 "-terphenyldicarboxylic acid, 4,4'-diphenylmethanedicarboxylic acid, 4 , 4'-diphenylethanedicarboxylic acid, 4,4'-diphenylpropanedicarboxylic acid, 4,4'-diphenylhexafluoropropanedicarboxylic acid, 4,4'-diphenyletherdicarboxylic acid, 4,4'-bibenzyldicarboxylic acid, 4,4'-stillbenzicarboxylic acid, 4,4'-transicarboxylic acid, 4,4'-carbonyldibenzoic acid, 4,4'-sulfonyldibenzoic acid, 4,4'-dithiodibenzoic acid, p- Phenylene diacetic acid, 3,3'-p-phenylenedipropionic acid, 4-carboxylacitic acid, p-phenylenediacrylic acid, 3,3'-[4,4'-(methylenedi-p-phenylene)] dipropion Acid, 4,4'-[4,4'-(oxydi-p-phenylene)] dipropionic acid, 4,4'-[4,4'-(oxydi-p-phenylene)] dibutyric acid, (isopropyri Examples thereof include dicarboxylic acids such as dendi-p-phenylenedioxy) dibutyric acid and bis (p-carboxyphenyl) dimethylsilane.
複素環を含むジカルボン酸としては、1,5−(9−オキソフルオレン)ジカルボン酸、3,4−フランジカルボン酸、4,5−チアゾールジカルボン酸、2−フェニル−4,5−チアゾールジカルボン酸、1,2,5−チアジアゾール−3,4−ジカルボン酸、1,2,5−オキサジアゾール−3,4−ジカルボン酸、2,3−ピリジンジカルボン酸、2,4−ピリジンジカルボン酸、2,5−ピリジンジカルボン酸、2,6−ピリジンジカルボン酸、3,4−ピリジンジカルボン酸、3,5−ピリジンジカルボン酸等を挙げることができる。 Examples of the dicarboxylic acid containing a heterocycle include 1,5- (9-oxofluorene) dicarboxylic acid, 3,4-furandicarboxylic acid, 4,5-thiazoledicarboxylic acid, 2-phenyl-4,5-thiazoledicarboxylic acid. 1,2,5-thiadiazol-3,4-dicarboxylic acid, 1,2,5-oxadiazole-3,4-dicarboxylic acid, 2,3-pyridinedicarboxylic acid, 2,4-pyridinedicarboxylic acid, 2, Examples thereof include 5-pyridinedicarboxylic acid, 2,6-pyridinedicarboxylic acid, 3,4-pyridinedicarboxylic acid and 3,5-pyridinedicarboxylic acid.
上記の各種ジカルボン酸は酸ジハライドあるいは無水の構造のものであってもよい。これらのジカルボン酸類は、特に直線的な構造のポリアミドを与えることが可能なジカルボン酸類であることが液晶分子の配向性を保つ上から好ましい。これらの中でも、テレフタル酸、イソテレフタル酸、1,4−シクロヘキサンジカルボン酸、4,4’−ビフェニルジカルボン酸、4,4’−ジフェニルメタンジカルボン酸、4,4’−ジフェニルエタンジカルボン酸、4,4’−ジフェニルプロパンジカルボン酸、4,4’−ジフェニルヘキサフルオロプロパンジカルボン酸、2,2−ビス(フェニル)プロパンジカルボン酸、4、4−ターフェニルジカルボン酸、2,6−ナフタレンジカルボン酸、2,5−ピリジンジカルボン酸またはこれらの酸ジハライド等が好ましく用いられる。これらの化合物には異性体が存在するものもあるが、それらを含む混合物であってもよい。また、2種以上の化合物を併用してもよい。なお、本発明に使用するジカルボン酸類は、上記の例示化合物に限定されるものではない。 The various dicarboxylic acids described above may have an acid dihalide or an anhydrous structure. It is particularly preferable that these dicarboxylic acids are dicarboxylic acids capable of giving a polyamide having a linear structure from the viewpoint of maintaining the orientation of the liquid crystal molecules. Among these, terephthalic acid, isoterephthalic acid, 1,4-cyclohexanedicarboxylic acid, 4,4'-biphenyldicarboxylic acid, 4,4'-diphenylmethanedicarboxylic acid, 4,4'-diphenylethanedicarboxylic acid, 4,4 '-Diphenylpropandicarboxylic acid, 4,4'-diphenylhexafluoropropanedicarboxylic acid, 2,2-bis (phenyl) propandicarboxylic acid, 4,4-terphenyldicarboxylic acid, 2,6-naphthalenedicarboxylic acid, 2, 5-pyridinedicarboxylic acid or acid dihalide thereof and the like are preferably used. Some of these compounds have isomers, but they may be mixtures containing them. Further, two or more kinds of compounds may be used in combination. The dicarboxylic acids used in the present invention are not limited to the above-mentioned exemplified compounds.
原料であるジアミン(「ジアミン成分」とも記載する)と原料であるテトラカルボン酸二無水物(「テトラカルボン酸二無水物成分」とも記載する)、テトラカルボン酸ジエステル、ジイソシアネート及びジカルボン酸から選ばれる成分との反応により、ポリアミック酸、ポリアミック酸エステル、ポリウレア、ポリアミドを得るにあたっては、公知の合成手法を用いることができる。一般的には、ジアミン成分とテトラカルボン酸二無水物成分、テトラカルボン酸ジエステル、ジイソシアネート及びジカルボン酸から選ばれる一種以上の成分とを、有機溶媒中で反応させる方法である。 Selected from the raw material diamine (also referred to as "diamine component") and the raw material tetracarboxylic dianhydride (also referred to as "tetracarboxylic dianhydride component"), tetracarboxylic acid diester, diisocyanate and dicarboxylic acid. A known synthetic method can be used to obtain a polyamic acid, a polyamic acid ester, a polyurea, or a polyamide by reacting with the components. Generally, it is a method of reacting a diamine component with one or more components selected from a tetracarboxylic dianhydride component, a tetracarboxylic dianester, a diisocyanate and a dicarboxylic acid in an organic solvent.
ジアミン成分とテトラカルボン酸二無水物成分との反応は、有機溶媒中で比較的容易に進行し、かつ副生成物が発生しない点で有利である。 The reaction between the diamine component and the tetracarboxylic dianhydride component is advantageous in that it proceeds relatively easily in an organic solvent and no by-products are generated.
上記反応に用いる有機溶媒としては、生成した重合体が溶解するものであれば特に限定されない。さらに、重合体が溶解しない有機溶媒であっても、生成した重合体が析出しない範囲で、上記溶媒に混合して使用してもよい。なお、有機溶媒中の水分は、重合反応を阻害し、さらには生成した重合体を加水分解させる原因となるので、有機溶媒は脱水乾燥させたものを用いることが好ましい。 The organic solvent used in the above reaction is not particularly limited as long as the produced polymer dissolves. Further, even if the organic solvent does not dissolve the polymer, it may be mixed with the above solvent and used as long as the produced polymer does not precipitate. Since the water content in the organic solvent inhibits the polymerization reaction and further causes the produced polymer to be hydrolyzed, it is preferable to use a dehydrated and dried organic solvent.
有機溶媒としては、例えば、N,N−ジメチルホルムアミド、N,N−ジメチルアセトアミド、N,N−ジエチルホルムアミド、N−メチルホルムアミド、N−メチル−2−ピロリドン、N−エチル−2−ピロリドン、2−ピロリドン、1,3−ジメチル−2−イミダゾリジノン、3−メトキシ−N,N−ジメチルプロパンアミド、N−メチルカプロラクタム、ジメチルスルホキシド、テトラメチル尿素、ピリジン、ジメチルスルホン、ヘキサメチルスルホキシド、γ−ブチロラクトン、イソプロピルアルコール、メトキシメチルペンタノール、ジペンテン、エチルアミルケトン、メチルノニルケトン、メチルエチルケトン、メチルイソアミルケトン、メチルイソプロピルケトン、メチルセルソルブ、エチルセルソルブ、メチルセロソルブアセテート、ブチルセロソルブアセテート、エチルセロソルブアセテート、ブチルカルビトール、エチルカルビトール、エチレングリコール、エチレングリコールモノアセテート、エチレングリコールモノイソプロピルエーテル、エチレングリコールモノブチルエーテル、プロピレングリコール、プロピレングリコールモノアセテート、プロピレングリコールモノメチルエーテル、プロピレングリコールモノブチルエーテル、プロピレングリコール−tert−ブチルエーテル、ジプロピレングリコールモノメチルエーテル、プロピレングリコールモノメチルエーテルアセテート、ジエチレングリコール、ジエチレングリコールモノアセテート、ジエチレングリコールジメチルエーテル、ジエチレングリコールジエチルエーテル、ジプロピレングリコールモノアセテートモノメチルエーテル、ジプロピレングリコールモノメチルエーテル、ジプロピレングリコールモノエチルエーテル、ジプロピレングリコールモノアセテートモノエチルエーテル、ジプロピレングリコールモノプロピルエーテル、ジプロピレングリコールモノアセテートモノプロピルエーテル、3−メチル−3−メトキシブチルアセテート、トリプロピレングリコールメチルエーテル、3−メチル−3−メトキシブタノール、ジイソプロピルエーテル、エチルイソブチルエーテル、ジイソブチレン、アミルアセテート、ブチルブチレート、ブチルエーテル、ジイソブチルケトン、メチルシクロへキセン、プロピルエーテル、ジヘキシルエーテル、ジオキサン、n−へキサン、n−ペンタン、n−オクタン、ジエチルエーテル、シクロヘキサノン、エチレンカーボネート、プロピレンカーボネート、乳酸メチル、乳酸エチル、酢酸メチル、酢酸エチル、酢酸n−ブチル、酢酸プロピレングリコールモノエチルエーテル、ピルビン酸メチル、ピルビン酸エチル、3−メトキシプロピオン酸メチル、3−エトキシプロピオン酸メチルエチル、3−メトキシプロピオン酸エチル、3−エトキシプロピオン酸、3−メトキシプロピオン酸、3−メトキシプロピオン酸プロピル、3−メトキシプロピオン酸ブチル、ジグライム、4−ヒドロキシ−4−メチル−2−ペンタノン、2−エチル−1−ヘキサノール等が挙げられる。これらの有機溶媒は単独で使用しても、混合して使用してもよい。 Examples of the organic solvent include N, N-dimethylformamide, N, N-dimethylacetamide, N, N-diethylformamide, N-methylformamide, N-methyl-2-pyrrolidone, N-ethyl-2-pyrrolidone, 2 -Pyrrolidone, 1,3-dimethyl-2-imidazolidinone, 3-methoxy-N, N-dimethylpropanamide, N-methylcaprolactam, dimethyl sulfoxide, tetramethylurea, pyridine, dimethyl sulfoxide, hexamethylsulfoxide, γ- Butyrolactone, isopropyl alcohol, methoxymethylpentanol, dipentene, ethylamyl ketone, methyl nonyl ketone, methyl ethyl ketone, methyl isoamyl ketone, methyl isopropyl ketone, methyl cellsolve, ethyl cellsolve, methyl cellosolve acetate, butyl cellosolve acetate, ethyl cellosolve acetate, butyl Carbitol, ethyl carbitol, ethylene glycol, ethylene glycol monoacetate, ethylene glycol monoisopropyl ether, ethylene glycol monobutyl ether, propylene glycol, propylene glycol monoacetate, propylene glycol monomethyl ether, propylene glycol monobutyl ether, propylene glycol-tert-butyl ether , Dipropylene glycol monomethyl ether, propylene glycol monomethyl ether acetate, diethylene glycol, diethylene glycol monoacetate, diethylene glycol dimethyl ether, diethylene glycol diethyl ether, dipropylene glycol monoacetate monomethyl ether, dipropylene glycol monomethyl ether, dipropylene glycol monoethyl ether, dipropylene glycol Monoacetate monoethyl ether, dipropylene glycol monopropyl ether, dipropylene glycol monoacetate monopropyl ether, 3-methyl-3-methoxybutyl acetate, tripropylene glycol methyl ether, 3-methyl-3-methoxybutanol, diisopropyl ether, Ethyl isobutyl ether, diisobutylene, amyl acetate, butyl butyrate, butyl ether, diisobutyl ketone, methylcyclohexene, propyl ether, dihexyl ether, dioxane, n-hexane, n-pentane, n-octane, diethyl ether. Tel, cyclohexanone, ethylene carbonate, propylene carbonate, methyl lactate, ethyl lactate, methyl acetate, ethyl acetate, n-butyl acetate, propylene glycol monoethyl ether acetate, methyl pyruvate, ethyl pyruvate, methyl 3-methoxypropionate, 3 -Methyl ethyl ethoxypropionate, ethyl 3-methoxypropionate, 3-ethoxypropionic acid, 3-methoxypropionic acid, propyl 3-methoxypropionate, butyl 3-methoxypropionate, diglime, 4-hydroxy-4-methyl- Examples thereof include 2-pentanone and 2-ethyl-1-hexanol. These organic solvents may be used alone or in combination.
ジアミン成分とテトラカルボン酸二無水物成分とを有機溶媒中で反応させる際には、ジアミン成分を有機溶媒に分散あるいは溶解させた溶液を攪拌し、テトラカルボン酸二無水物成分をそのまま、又は有機溶媒に分散あるいは溶解させて添加する方法、逆にテトラカルボン酸二無水物成分を有機溶媒に分散あるいは溶解させた溶液にジアミン成分を添加する方法、テトラカルボン酸二無水物成分とジアミン成分とを交互に添加する方法などが挙げられ、これらのいずれの方法を用いてもよい。また、ジアミン成分又はテトラカルボン酸二無水物成分が複数種の化合物からなる場合は、あらかじめ混合した状態で反応させてもよく、個別に順次反応させてもよく、さらに個別に反応させた低分子量体を混合反応させ高分子量体としてもよい。 When the diamine component and the tetracarboxylic dianhydride component are reacted in an organic solvent, the solution in which the diamine component is dispersed or dissolved in the organic solvent is stirred, and the tetracarboxylic dianhydride component is used as it is or is organic. A method of adding by dispersing or dissolving in a solvent, conversely, a method of adding a diamine component to a solution in which a tetracarboxylic dianhydride component is dispersed or dissolved in an organic solvent, a method of adding a tetracarboxylic dianhydride component and a diamine component. Examples thereof include a method of alternately adding, and any of these methods may be used. When the diamine component or the tetracarboxylic dianhydride component is composed of a plurality of types of compounds, they may be reacted in a premixed state, may be reacted individually in sequence, or may be reacted individually, and have a low molecular weight. The bodies may be mixed and reacted to form a high molecular weight compound.
ジアミン成分とテトラカルボン酸二無水物成分とを反応させる際の温度は、任意の温度を選択することができ、例えば、−20〜100℃、好ましくは−5〜80℃の範囲である。また、反応は任意の濃度で行うことができ、例えば、反応液に対してジアミン成分とテトラカルボン酸二無水物成分との合計量が1〜50質量%、好ましくは5〜30質量%である。 The temperature at which the diamine component and the tetracarboxylic dianhydride component are reacted can be selected from any temperature, and is, for example, in the range of -20 to 100 ° C, preferably −5 to 80 ° C. The reaction can be carried out at any concentration, for example, the total amount of the diamine component and the tetracarboxylic dianhydride component is 1 to 50% by mass, preferably 5 to 30% by mass with respect to the reaction solution. ..
上記の重合反応における、ジアミン成分の合計モル数に対するテトラカルボン酸二無水物成分の合計モル数の比率は、得ようとするポリアミック酸の分子量に応じて任意の値を選択することができる。通常の重縮合反応と同様に、このモル比が1.0に近いほど生成するポリアミック酸の分子量は大きくなる。好ましい範囲としては、0.8〜1.2である。 The ratio of the total number of moles of the tetracarboxylic dianhydride component to the total number of moles of the diamine component in the above polymerization reaction can be selected arbitrarily according to the molecular weight of the polyamic acid to be obtained. Similar to a normal polycondensation reaction, the closer the molar ratio is to 1.0, the larger the molecular weight of the polyamic acid produced. The preferred range is 0.8 to 1.2.
本発明に用いられる重合体を合成する方法は、上記の手法に限定されず、ポリアミック酸を合成する場合は、一般的なポリアミック酸の合成方法と同様に、上記のテトラカルボン酸二無水物に代えて、対応する構造のテトラカルボン酸又はテトラカルボン酸ジハライドなどのテトラカルボン酸誘導体を用い、公知の方法で反応させることでも対応するポリアミック酸を得ることができる。また、ポリウレアを合成する場合は、ジアミンとジイソシアネートとを反応させればよい。ポリアミック酸エステルまたはポリアミドを製造する際には、ジアミンと、テトラカルボン酸ジエステル及びジカルボン酸から選ばれる成分を、公知の縮合剤の存在下で、又は、公知の方法で酸ハライドに誘導したのちに、ジアミンと反応させればよい。 The method for synthesizing the polymer used in the present invention is not limited to the above method, and when synthesizing a polyamic acid, the above tetracarboxylic dianhydride is used in the same manner as a general method for synthesizing a polyamic acid. Alternatively, the corresponding polyamic acid can also be obtained by reacting by a known method using a tetracarboxylic acid having a corresponding structure or a tetracarboxylic acid derivative such as a tetracarboxylic acid dihalide. Further, when synthesizing polyurea, diamine and diisocyanate may be reacted. When producing a polyamic acid ester or polyamide, a diamine and a component selected from a tetracarboxylic acid diester and a dicarboxylic acid are induced into acid halide in the presence of a known condensing agent or by a known method. , Diamine may be reacted.
上記したポリアミック酸をイミド化させてポリイミドとする方法としては、ポリアミック酸の溶液をそのまま加熱する熱イミド化、ポリアミック酸の溶液に触媒を添加する触媒イミド化が挙げられる。なお、ポリアミック酸からポリイミドへのイミド化率は、電圧保持率を高くできることから、30%以上であることが好ましく、30〜99%であることがより好ましい。一方、白化特性の、すなわち、ワニス中での重合体の析出を抑制する観点から、70%以下が好ましい。両方の特性を加味すると、40〜80%がより好ましい。 Examples of the method for imidizing the above-mentioned polyamic acid to obtain polyimide include thermal imidization in which the polyamic acid solution is heated as it is, and catalytic imidization in which a catalyst is added to the polyamic acid solution. The imidization rate from the polyamic acid to the polyimide is preferably 30% or more, and more preferably 30 to 99%, because the voltage holding rate can be increased. On the other hand, 70% or less is preferable from the viewpoint of whitening characteristics, that is, from the viewpoint of suppressing precipitation of the polymer in the varnish. Considering both properties, 40-80% is more preferable.
ポリアミック酸を溶液中で熱イミド化させる場合の温度は、通常100〜400℃、好ましくは120〜250℃であり、イミド化反応により生成する水を系外に除きながら行うことが好ましい。 The temperature at which the polyamic acid is thermally imidized in the solution is usually 100 to 400 ° C., preferably 120 to 250 ° C., and it is preferable to remove the water generated by the imidization reaction from the system.
ポリアミック酸の触媒イミド化は、ポリアミック酸の溶液に、塩基性触媒と酸無水物とを添加し、通常−20〜250℃、好ましくは0〜180℃で攪拌することにより行うことができる。塩基性触媒の量は、アミド酸基の通常0.5〜30モル倍、好ましくは2〜20モル倍であり、酸無水物の量は、アミド酸基の通常1〜50モル倍、好ましくは3〜30モル倍である。塩基性触媒としては、ピリジン、トリエチルアミン、トリメチルアミン、トリブチルアミン、トリオクチルアミンなどを挙げることができ、中でもピリジンは反応を進行させるのに適度な塩基性を持つので好ましい。酸無水物としては、無水酢酸、無水トリメリット酸、無水ピロメリット酸などを挙げることができるが、中でも無水酢酸を用いると反応終了後の精製が容易となるので好ましい。触媒イミド化によるイミド化率は、触媒量と反応温度、反応時間などを調節することにより制御することができる。 The catalytic imidization of the polyamic acid can be carried out by adding a basic catalyst and an acid anhydride to the solution of the polyamic acid and stirring at usually -20 to 250 ° C., preferably 0 to 180 ° C. The amount of the basic catalyst is usually 0.5 to 30 mol times, preferably 2 to 20 mol times, that of the amic acid group, and the amount of acid anhydride is usually 1 to 50 mol times, preferably 1 to 50 mol times that of the amic acid group. It is 3 to 30 mol times. Examples of the basic catalyst include pyridine, triethylamine, trimethylamine, tributylamine, and trioctylamine. Among them, pyridine is preferable because it has an appropriate basicity for advancing the reaction. Examples of the acid anhydride include acetic anhydride, trimellitic anhydride, pyromellitic anhydride and the like, and among them, acetic anhydride is preferable because it facilitates purification after completion of the reaction. The imidization rate by catalytic imidization can be controlled by adjusting the amount of catalyst, the reaction temperature, the reaction time, and the like.
重合体の反応溶液から、生成した重合体を回収する場合には、反応溶液を貧溶媒に投入して沈殿させればよい。沈殿生成に用いる貧溶媒としては、メタノール、アセトン、ヘキサン、ブチルセルソルブ、ヘプタン、メチルエチルケトン、メチルイソブチルケトン、エタノール、トルエン、ベンゼン、水などを挙げることができる。貧溶媒に投入して沈殿させたポリマーは、濾過して回収した後、常圧あるいは減圧下で、常温あるいは加熱して乾燥することができる。また、沈殿回収した重合体を、有機溶媒に再溶解させ、再沈殿回収する操作を2〜10回繰り返すと、重合体中の不純物を少なくすることができる。この際の貧溶媒として、例えば、アルコール類、ケトン類、炭化水素などが挙げられ、これらの内から選ばれる3種類以上の貧溶媒を用いると、より一層精製の効率が上がるので好ましい。 When the produced polymer is recovered from the reaction solution of the polymer, the reaction solution may be put into a poor solvent to precipitate. Examples of the poor solvent used for precipitation formation include methanol, acetone, hexane, butyl cellsolve, heptane, methyl ethyl ketone, methyl isobutyl ketone, ethanol, toluene, benzene, water and the like. The polymer which has been put into a poor solvent and precipitated can be collected by filtration and then dried at normal temperature or by heating under normal pressure or reduced pressure. Further, when the operation of redistributing the polymer recovered by precipitation in an organic solvent and repeating the operation of recovering the precipitation 2 to 10 times, impurities in the polymer can be reduced. Examples of the poor solvent at this time include alcohols, ketones, hydrocarbons, and the like, and it is preferable to use three or more kinds of poor solvents selected from these, because the purification efficiency is further improved.
また、前記ラジカル発生膜が、ラジカル重合を誘発する有機基を含有する重合体から成る場合、本発明に用いるラジカル発生膜形成組成物は、ラジカル重合を誘発する有機基を含有する重合体以外の他の重合体を含有していてもよい。その際、重合体全成分中における、他の重合体の含有量は5〜95質量%が好ましく、より好ましくは30〜70質量%である。 When the radical generation film is composed of a polymer containing an organic group that induces radical polymerization, the radical generation film forming composition used in the present invention is other than a polymer containing an organic group that induces radical polymerization. It may contain other polymers. At that time, the content of the other polymer in the total components of the polymer is preferably 5 to 95% by mass, more preferably 30 to 70% by mass.
ラジカル発生膜形成組成物が有する重合体の分子量は、ラジカル発生膜を塗布して得られるラジカル発生膜の強度、塗膜形成時の作業性、塗膜の均一性等を考慮した場合、GPC(Gel Permeation Chromatography)法で測定した重量平均分子量で、5,000〜1,000,000が好ましく、より好ましくは、10,000〜150,000である。 The molecular weight of the polymer contained in the radical generation film forming composition is GPC (GPC) when the strength of the radical generation film obtained by applying the radical generation film, workability at the time of coating film formation, uniformity of the coating film, etc. are taken into consideration. The weight average molecular weight measured by the Gel Permeation Chromatography method is preferably 5,000 to 1,000,000, more preferably 10,000 to 150,000.
本発明に用いるラジカル発生膜を、ラジカルを発生する基を有する化合物と重合体との組成物を塗布、硬化して膜を形成することにより膜中に固定化させて得る場合の重合体としては、上記の製造方法に準じて製造されるポリイミド前駆体、及びポリイミド、ポリウレア、ポリアミド、ポリアクリレート、ポリメタクリレートなどからなる群から選ばれる重合体であって、ラジカル重合が発生する部位を有するジアミンが、ラジカル発生膜形成組成物に含有させる重合体の合成に用いるジアミン成分全体の0モル%であるジアミン成分を用いて得られる少なくとも1種の重合体を用いてもよい。その際に添加するラジカルを発生する基を有する化合物としては、以下のものが挙げられる。 As a polymer in the case where the radical generating film used in the present invention is immobilized in the film by applying a composition of a compound having a group that generates a radical and a polymer and curing the film to form a film. , A polyimide precursor produced according to the above production method, and a polymer selected from the group consisting of polyimide, polyurea, polyamide, polyacrylate, polymethacrylate, etc., and a diamine having a site where radical polymerization occurs. , At least one polymer obtained by using the diamine component which is 0 mol% of the total diamine component used for synthesizing the polymer contained in the radical generation film forming composition may be used. Examples of the compound having a group that generates a radical to be added at that time include the following.
熱でラジカルを発生する化合物としては、分解温度以上に加熱することにより、ラジカルを発生させる化合物である。このようなラジカル熱重合開始剤としては、例えば、ケトンパーオキサイド類(メチルエチルケトンパーオキサイド、シクロヘキサノンパーオキサイド等)、ジアシルパーオキサイド類(アセチルパーオキサイド、ベンゾイルパーオキサイド等)、ハイドロパーオキサイド類(過酸化水素、tert−ブチルハイドパーオキサイド、クメンハイドロパーオキサイド等)、ジアルキルパーオキサイド類 (ジ−tert−ブチルパーオキサイド、ジクミルパーオキサイド、ジラウロイルパーオキサイド等)、パーオキシケタール類(ジブチルパーオキシシクロヘキサン等)、アルキルパーエステル類(パーオキシネオデカン酸−tert−ブチルエステル、パーオキシピバリン酸−tert−ブチルエステル、パーオキシ2−エチルシクロヘキサン酸−tert−アミルエステル等)、過硫酸塩類(過硫酸カリウム、過硫酸ナトリウム、過硫酸アンモニウム等)、アゾ系化合物(アゾビスイソブチロニトリル、および2,2’−ジ(2−ヒドロキシエチル)アゾビスイソブチロニトリル等)が挙げられる。このようなラジカル熱重合開始剤は、1種を単独で使用することもできるし、あるいは2種以上を組み合わせて使用することもできる。 The compound that generates radicals by heat is a compound that generates radicals by heating to a temperature higher than the decomposition temperature. Examples of such radical thermal polymerization initiators include ketone peroxides (methyl ethyl ketone peroxide, cyclohexanone peroxide, etc.), diacyl peroxides (acetyl peroxide, benzoyl peroxide, etc.), and hydroperoxides (peroxidation). Hydrogen, tert-butylhydroxide, cumenehydroperoxide, etc.), dialkyl peroxides (di-tert-butyl peroxide, dicumyl peroxide, dilauroyl peroxide, etc.), peroxyketars (dibutylperoxycyclohexane, etc.) Etc.), alkyl peresters (peroxyneodecanic acid-tert-butyl ester, peroxypivalic acid-tert-butyl ester, peroxy2-ethylcyclohexanoic acid-tert-amyl ester, etc.), persulfates (potassium persulfate, etc.) Examples thereof include sodium persulfate, ammonium persulfate, etc.) and azo compounds (azobisisobutyronitrile, and 2,2'-di (2-hydroxyethyl) azobisisobutyronitrile, etc.). As such a radical thermal polymerization initiator, one type may be used alone, or two or more types may be used in combination.
光でラジカルを発生する化合物としては、ラジカル重合を光照射によって開始する化合物であれば特に限定されない。このようなラジカル光重合開始剤としては、ベンゾフェノン、ミヒラーズケトン、4,4’−ビス(ジエチルアミノ)ベンゾフェノン、キサントン、チオキサントン、イソプロピルキサントン、2,4−ジエチルチオキサントン、2−エチルアントラキノン、アセトフェノン、2−ヒドロキシ−2−メチルプロピオフェノン、2−ヒドロキシ−2−メチル−4’−イソプロピルプロピオフェノン、1−ヒドロキシシクロヘキシルフェニルケトン、イソプロピルベンゾインエーテル、イソブチルベンゾインエーテル、2,2−ジエトキシアセトフェノン、2,2−ジメトキシ−2−フェニルアセトフェノン、カンファーキノン、ベンズアントロン、2−メチル−1−[4−(メチルチオ)フェニル]−2−モルホリノプロパン−1−オン、2−ベンジル−2−ジメチルアミノ−1−(4−モルホリノフェニル)−ブタノン−1、4−ジメチルアミノ安息香酸エチル、4−ジメチルアミノ安息香酸イソアミル、4,4’−ジ(t−ブチルペルオキシカルボニル)ベンゾフェノン、3,4,4’−トリ(t−ブチルペルオキシカルボニル)ベンゾフェノン、2,4,6−トリメチルベンゾイルジフェニルフォスフィンオキサイド、2−(4’−メトキシスチリル)−4,6−ビス(トリクロロメチル)−s−トリアジン、2−(3’,4’−ジメトキシスチリル)−4,6−ビス(トリクロロメチル)−s−トリアジン、2−(2’,4’−ジメトキシスチリル)−4,6−ビス(トリクロロメチル)−s−トリアジン、2−(2’−メトキシスチリル)−4,6−ビス(トリクロロメチル)−s−トリアジン、2−(4’−ペンチルオキシスチリル)−4,6−ビス(トリクロロメチル)−s−トリアジン、4−[p−N,N−ジ(エトキシカルボニルメチル)]−2,6−ジ(トリクロロメチル)−s−トリアジン、1,3−ビス(トリクロロメチル)−5−(2’−クロロフェニル)−s−トリアジン、1,3−ビス(トリクロロメチル)−5−(4’−メトキシフェニル)−s−トリアジン、2−(p−ジメチルアミノスチリル)ベンズオキサゾール、2−(p−ジメチルアミノスチリル)ベンズチアゾール、2−メルカプトベンゾチアゾール、3,3’−カルボニルビス(7−ジエチルアミノクマリン)、2−(o−クロロフェニル)−4,4’,5,5’−テトラフェニル−1,2’−ビイミダゾール、2,2’−ビス(2−クロロフェニル)−4,4’,5,5’−テトラキス(4−エトキシカルボニルフェニル)−1,2’−ビイミダゾール、2,2’−ビス(2,4−ジクロロフェニル)−4,4’,5,5’−テトラフェニル−1,2’−ビイミダゾール、2,2’ビス(2,4−ジブロモフェニル)−4,4’,5,5’−テトラフェニル−1,2’−ビイミダゾール、2,2’−ビス(2,4,6−トリクロロフェニル)−4,4’,5,5’−テトラフェニル−1,2’−ビイミダゾール、3−(2−メチル−2−ジメチルアミノプロピオニル)カルバゾール、3,6−ビス(2−メチル−2−モルホリノプロピオニル)−9−n−ドデシルカルバゾール、1−ヒドロキシシクロヘキシルフェニルケトン、ビス(5−2,4−シクロペンタジエン−1−イル)−ビス(2,6−ジフルオロ−3−(1H−ピロール−1−イル)−フェニル)チタニウム、3,3’,4,4’−テトラ(t−ブチルペルオキシカルボニル)ベンゾフェノン、3,3’,4,4’−テトラ(t−ヘキシルペルオキシカルボニル)ベンゾフェノン、3,3’−ジ(メトキシカルボニル)−4,4’−ジ(t−ブチルペルオキシカルボニル)ベンゾフェノン、3,4’−ジ(メトキシカルボニル)−4,3’−ジ(t−ブチルペルオキシカルボニル)ベンゾフェノン、4,4’−ジ(メトキシカルボニル)−3,3’−ジ(t−ブチルペルオキシカルボニル)ベンゾフェノン、2−(3−メチル−3H−ベンゾチアゾール−2−イリデン)−1−ナフタレン−2−イル−エタノン、又は2−(3−メチル−1,3−ベンゾチアゾール−2(3H)−イリデン)−1−(2−ベンゾイル)エタノン等を挙げることができる。これらの化合物は単独で使用してもよく、2つ以上を混合して使用することもできる。 The compound that generates radicals with light is not particularly limited as long as it is a compound that initiates radical polymerization by light irradiation. Examples of such radical photopolymerization initiators include benzophenone, Michler's ketone, 4,4'-bis (diethylamino) benzophenone, xanthone, thioxanthone, isopropylxanthone, 2,4-diethylthioxanthone, 2-ethylanthraquinone, acetophenone and 2-hydroxy. -2-Methylpropiophenone, 2-hydroxy-2-methyl-4'-isopropylpropiophenone, 1-hydroxycyclohexylphenylketone, isopropylbenzoin ether, isobutylbenzoin ether, 2,2-diethoxyacetophenone, 2,2 -Dimethoxy-2-phenylacetophenone, camphorquinone, benzanthron, 2-methyl-1- [4- (methylthio) phenyl] -2-morpholinopropan-1-one, 2-benzyl-2-dimethylamino-1-( 4-Molholinophenyl) -butanone-1, 4-ethylaminobenzoate, isoamyl 4-dimethylaminobenzoate, 4,4'-di (t-butylperoxycarbonyl) benzophenone, 3,4,4'-tri ( t-Butylperoxycarbonyl) benzophenone, 2,4,6-trimethylbenzoyldiphenylphosphine oxide, 2- (4'-methoxystyryl) -4,6-bis (trichloromethyl) -s-triazine, 2- (3' , 4'-dimethoxystyryl) -4,6-bis (trichloromethyl) -s-triazine, 2- (2', 4'-dimethoxystyryl) -4,6-bis (trichloromethyl) -s-triazine, 2 -(2'-methoxystyryl) -4,6-bis (trichloromethyl) -s-triazine, 2- (4'-pentyloxystyryl) -4,6-bis (trichloromethyl) -s-triazine, 4- [P-N, N-di (ethoxycarbonylmethyl)]-2,6-di (trichloromethyl) -s-triazine, 1,3-bis (trichloromethyl) -5- (2'-chlorophenyl) -s- Triazine, 1,3-bis (trichloromethyl) -5- (4'-methoxyphenyl) -s-triazine, 2- (p-dimethylaminostyryl) benzoxazole, 2- (p-dimethylaminostyryl) benzthiazole, 2-Mercaptobenzothiazole, 3,3'-carbonylbis (7-diethylaminocoumarin), 2- (o-chlorophenyl) -4,4', 5,5'-tetraphenyl-1,2'-biimidazole, 2 , 2'-bi Su (2-chlorophenyl) -4,4', 5,5'-tetrakis (4-ethoxycarbonylphenyl) -1,2'-biimidazole, 2,2'-bis (2,4-dichlorophenyl) -4, 4', 5,5'-Tetraphenyl-1,2'-biimidazole, 2,2'bis (2,4-dibromophenyl) -4,4', 5,5'-Tetraphenyl-1,2' -Bimidazole, 2,2'-bis (2,4,6-trichlorophenyl) -4,4', 5,5'-tetraphenyl-1,2'-bimidazole, 3- (2-methyl-2) -Dimethylaminopropionyl) carbazole, 3,6-bis (2-methyl-2-morpholinopropionyl) -9-n-dodecylcarbazole, 1-hydroxycyclohexylphenylketone, bis (5-2,4-cyclopentadiene-1- Il) -bis (2,6-difluoro-3- (1H-pyrrole-1-yl) -phenyl) titanium, 3,3', 4,4'-tetra (t-butylperoxycarbonyl) benzophenone, 3,3 ', 4,4'-tetra (t-hexyl peroxycarbonyl) benzophenone, 3,3'-di (methoxycarbonyl) -4,4'-di (t-butyl peroxycarbonyl) benzophenone, 3,4'-di (3,4'-di ( Methylcarbonyl) -4,3'-di (t-butylperoxycarbonyl) benzophenone, 4,4'-di (methoxycarbonyl) -3,3'-di (t-butylperoxycarbonyl) benzophenone, 2- (3- (3-) Methyl-3H-benzothiazole-2-ylidene) -1-naphthalen-2-yl-etanone, or 2- (3-methyl-1,3-benzothiazole-2 (3H) -iriden) -1- (2-) Benzoyl) Etanone and the like can be mentioned. These compounds may be used alone or in admixture of two or more.
なお、前記ラジカル発生膜が、ラジカル重合を誘発する有機基を含有する重合体から成る場合であっても、エネルギーを与えた際にラジカル重合を促進する目的で、上記のラジカルを発生する基を有する化合物を含有させてもよい。 Even when the radical generation film is composed of a polymer containing an organic group that induces radical polymerization, the group that generates the above radical is used for the purpose of promoting radical polymerization when energy is applied. The compound to be contained may be contained.
ラジカル発生膜形成組成物は、重合体成分、必要に応じてラジカル発生剤その他の含有成分を溶解又は分散する有機溶媒を含有することができる。そのような有機溶媒に特に限定はなく、例えば、上記のポリアミック酸の合成で例示したような有機溶媒を挙げることができる。中でも、N−メチル−2−ピロリドン、γ−ブチロラクトン、N−エチル−2−ピロリドン、1,3−ジメチル−2−イミダゾリジノン、3−メトキシ−N,N−ジメチルプロパンアミド等は、溶解性の観点から好ましい。特に、N−メチル−2−ピロリドン又はN−エチル−2−ピロリドンが好ましいが、2種類以上の混合溶媒を用いてもよい。 The radical generation film-forming composition can contain a polymer component, and if necessary, an organic solvent that dissolves or disperses a radical generator and other contained components. Such an organic solvent is not particularly limited, and examples thereof include organic solvents as exemplified in the above-mentioned synthesis of polyamic acid. Among them, N-methyl-2-pyrrolidone, γ-butyrolactone, N-ethyl-2-pyrrolidone, 1,3-dimethyl-2-imidazolidinone, 3-methoxy-N, N-dimethylpropanamide and the like are soluble. It is preferable from the viewpoint of. In particular, N-methyl-2-pyrrolidone or N-ethyl-2-pyrrolidone is preferable, but two or more kinds of mixed solvents may be used.
また、塗膜の均一性や平滑性を向上させる溶媒を、ラジカル発生膜形成組成物の含有成分の溶解性が高い有機溶媒に混合して使用すると好ましい。 Further, it is preferable to use a solvent for improving the uniformity and smoothness of the coating film by mixing it with an organic solvent having high solubility of the components contained in the radical generation film forming composition.
塗膜の均一性や平滑性を向上させる溶媒としては、例えば、イソプロピルアルコール、メトキシメチルペンタノール、メチルセロソルブ、エチルセロソルブ、ブチルセロソルブ、メチルセロソルブアセテート、ブチルセロソルブアセテート、エチルセロソルブアセテート、ブチルカルビトール、エチルカルビトール、エチルカルビトールアセテート、エチレングリコール、エチレングリコールモノアセテート、エチレングリコールモノイソプロピルエーテル、エチレングリコールモノブチルエーテル、プロピレングリコール、プロピレングリコールモノアセテート、プロピレングリコールモノメチルエーテル、プロピレングリコールモノブチルエーテル、プロピレングリコール−tert−ブチルエーテル、ジプロピレングリコールモノメチルエーテル、ジエチレングリコール、ジエチレングリコールモノアセテート、ジエチレングリコールジメチルエーテル、ジエチレングリコールジエチルエーテル、ジプロピレングリコールモノアセテートモノメチルエーテル、ジプロピレングリコールモノメチルエーテル、プロピレングリコールモノメチルエーテルアセテート、ジプロピレングリコールモノエチルエーテル、ジプロピレングリコールモノアセテートモノエチルエーテル、ジプロピレングリコールモノプロピルエーテル、ジプロピレングリコールモノアセテートモノプロピルエーテル、3−メチル−3−メトキシブチルアセテート、トリプロピレングリコールメチルエーテル、3−メチル−3−メトキシブタノール、ジイソプロピルエーテル、エチルイソブチルエーテル、ジイソブチレン、アミルアセテート、ブチルブチレート、ブチルエーテル、ジイソブチルケトン、メチルシクロへキセン、プロピルエーテル、ジヘキシルエーテル、n−へキサン、n−ペンタン、n−オクタン、ジエチルエーテル、乳酸メチル、乳酸エチル、酢酸メチル、酢酸エチル、酢酸n−ブチル、酢酸プロピレングリコールモノエチルエーテル、ピルビン酸メチル、ピルビン酸エチル、3−メトキシプロピオン酸メチル、3−エトキシプロピオン酸メチルエチル、3−メトキシプロピオン酸エチル、3−エトキシプロピオン酸、3−メトキシプロピオン酸、3−メトキシプロピオン酸プロピル、3−メトキシプロピオン酸ブチル、1−メトキシ−2−プロパノール、1−エトキシ−2−プロパノール、1−ブトキシ−2−プロパノール、1−フェノキシ−2−プロパノール、プロピレングリコールモノアセテート、プロピレングリコールジアセテート、プロピレングリコール−1−モノメチルエーテル−2−アセテート、プロピレングリコール−1−モノエチルエーテル−2−アセテート、ジプロピレングリコール、2−(2−エトキシプロポキシ)プロパノール、乳酸メチルエステル、乳酸エチルエステル、乳酸n−プロピルエステル、乳酸n−ブチルエステル、乳酸イソアミルエステル、2−エチル−1−ヘキサノールなどが挙げられる。これらの溶媒は複数種類を混合してもよい。これらの溶媒を用いる場合は、液晶配向剤に含まれる溶媒全体の5〜80質量%であることが好ましく、より好ましくは20〜60質量%である。 Examples of the solvent for improving the uniformity and smoothness of the coating film include isopropyl alcohol, methoxymethylpentanol, methyl cellosolve, ethyl cellosolve, butyl cellosolve, methyl cellosolve acetate, butyl cellosolve acetate, ethyl cellosolve acetate, butyl carbitol, and ethyl carvi. Thor, ethyl carbitol acetate, ethylene glycol, ethylene glycol monoacetate, ethylene glycol monoisopropyl ether, ethylene glycol monobutyl ether, propylene glycol, propylene glycol monoacetate, propylene glycol monomethyl ether, propylene glycol monobutyl ether, propylene glycol-tert-butyl ether , Dipropylene glycol monomethyl ether, diethylene glycol, diethylene glycol monoacetate, diethylene glycol dimethyl ether, diethylene glycol diethyl ether, dipropylene glycol monoacetate monomethyl ether, dipropylene glycol monomethyl ether, propylene glycol monomethyl ether acetate, dipropylene glycol monoethyl ether, dipropylene glycol Monoacetate monoethyl ether, dipropylene glycol monopropyl ether, dipropylene glycol monoacetate monopropyl ether, 3-methyl-3-methoxybutyl acetate, tripropylene glycol methyl ether, 3-methyl-3-methoxybutanol, diisopropyl ether, Ethylisobutyl ether, diisobutylene, amylacetate, butylbutyrate, butyl ether, diisobutylketone, methylcyclohexene, propyl ether, dihexyl ether, n-hexane, n-pentane, n-octane, diethyl ether, methyl lactate, ethyl lactate. , Methyl acetate, ethyl acetate, n-butyl acetate, propylene glycol monoethyl ether acetate, methyl pyruvate, ethyl pyruvate, methyl 3-methoxypropionate, methyl ethyl 3-ethoxypropionate, ethyl 3-methoxypropionate, 3 -Ethoxypropionic acid, 3-methoxypropionic acid, propyl 3-methoxypropionate, butyl 3-methoxypropionate, 1-methoxy-2-propanol, 1-ethoxy-2-propanol, 1-butoxy-2-propanol, 1 − Phenoxy-2-propanol, propylene glycol monoacetate, propylene glycol diacetate, propylene glycol-1-monomethyl ether-2-acetate, propylene glycol-1-monoethyl ether-2-acetate, dipropylene glycol, 2- (2- (2-) Ethoxypropoxy) propanol, lactic acid methyl ester, lactate ethyl ester, lactate n-propyl ester, lactate n-butyl ester, lactate isoamyl ester, 2-ethyl-1-hexanol and the like can be mentioned. A plurality of types of these solvents may be mixed. When these solvents are used, it is preferably 5 to 80% by mass, more preferably 20 to 60% by mass, based on the total amount of the solvent contained in the liquid crystal alignment agent.
ラジカル発生膜形成組成物には、上記以外の成分を含有させてもよい。その例としては、ラジカル発生膜形成組成物を塗布した際の膜厚均一性や表面平滑性を向上させる化合物、ラジカル発生膜形成組成物と基板との密着性を向上させる化合物、ラジカル発生膜形成組成物の膜強度をさらに向上させる化合物などが挙げられる。 The radical generation film forming composition may contain components other than the above. Examples thereof include a compound that improves the film thickness uniformity and surface smoothness when the radical generation film forming composition is applied, a compound that improves the adhesion between the radical generation film forming composition and the substrate, and a radical generation film formation. Examples thereof include compounds that further improve the film strength of the composition.
膜厚の均一性や表面平滑性を向上させる化合物としては、フッ素系界面活性剤、シリコーン系界面活性剤、ノ二オン系界面活性剤などが挙げられる。より具体的には、例えば、エフトップEF301、EF303、EF352(トーケムプロダクツ社製))、メガファックF171、F173、R−30(大日本インキ社製)、フロラードFC430、FC431(住友スリーエム社製)、アサヒガードAG710、サーフロンS−382、SC101、SC102、SC103、SC104、SC105、SC106(旭硝子社製)などが挙げられる。これらの界面活性剤を使用する場合、その使用割合は、ラジカル発生膜形成組成物に含有される重合体の総量100質量部に対して、好ましくは0.01〜2質量部、より好ましくは0.01〜1質量部である。 Examples of compounds that improve the uniformity of film thickness and surface smoothness include fluorine-based surfactants, silicone-based surfactants, and nonionic surfactants. More specifically, for example, Ftop EF301, EF303, EF352 (manufactured by Tochem Products), Megafvck F171, F173, R-30 (manufactured by Dainippon Ink), Florard FC430, FC431 (manufactured by Sumitomo 3M Ltd.) ), Asahi Guard AG710, Surflon S-382, SC101, SC102, SC103, SC104, SC105, SC106 (manufactured by Asahi Glass Co., Ltd.) and the like. When these surfactants are used, the ratio of their use is preferably 0.01 to 2 parts by mass, more preferably 0, with respect to 100 parts by mass of the total amount of the polymer contained in the radical generation film forming composition. It is 0.01 to 1 part by mass.
ラジカル発生膜形成組成物と基板との密着性を向上させる化合物の具体例としては、官能性シラン含有化合物やエポキシ基含有化合物などが挙げられる。例えば、3−アミノプロピルトリメトキシシラン、3−アミノプロピルトリエトキシシラン、2−アミノプロピルトリメトキシシラン、2−アミノプロピルトリエトキシシラン、N−(2−アミノエチル)−3−アミノプロピルトリメトキシシラン、N−(2−アミノエチル)−3−アミノプロピルメチルジメトキシシラン、3−ウレイドプロピルトリメトキシシラン、3−ウレイドプロピルトリエトキシシラン、N−エトキシカルボニル−3−アミノプロピルトリメトキシシラン、N−エトキシカルボニル−3−アミノプロピルトリエトキシシラン、N−トリエトキシシリルプロピルトリエチレントリアミン、N−トリメトキシシリルプロピルトリエチレントリアミン、10−トリメトキシシリル−1,4,7−トリアザデカン、10−トリエトキシシリル−1,4,7−トリアザデカン、9−トリメトキシシリル−3,6−ジアザノニルアセテート、9−トリエトキシシリル−3,6−ジアザノニルアセテート、N−ベンジル−3−アミノプロピルトリメトキシシラン、N−ベンジル−3−アミノプロピルトリエトキシシラン、N−フェニル−3−アミノプロピルトリメトキシシラン、N−フェニル−3−アミノプロピルトリエトキシシラン、N−ビス(オキシエチレン)−3−アミノプロピルトリメトキシシラン、N−ビス(オキシエチレン)−3−アミノプロピルトリエトキシシラン、エチレングリコールジグリシジルエーテル、ポリエチレングリコールジグリシジルエーテル、プロピレングリコールジグリシジルエーテル、トリプロピレングリコールジグリシジルエーテル、ポリプロピレングリコールジグリシジルエーテル、ネオペンチルグリコールジグリシジルエーテル、1,6−ヘキサンジオールジグリシジルエーテル、グリセリンジグリシジルエーテル、2,2−ジブロモネオペンチルグリコールジグリシジルエーテル、1,3,5,6−テトラグリシジル−2,4−ヘキサンジオール、N,N,N’,N’−テトラグリシジル−m−キシレンジアミン、1,3−ビス(N,N−ジグリシジルアミノメチル)シクロヘキサン、N,N,N’,N’−テトラグリシジル−4、4’−ジアミノジフェニルメタン、3−(N−アリル−N−グリシジル)アミノプロピルトリメトキシシラン、3−(N,N−ジグリシジル)アミノプロピルトリメトキシシランなどが挙げられる。 Specific examples of the compound for improving the adhesion between the radical generation film forming composition and the substrate include a functional silane-containing compound and an epoxy group-containing compound. For example, 3-aminopropyltrimethoxysilane, 3-aminopropyltriethoxysilane, 2-aminopropyltrimethoxysilane, 2-aminopropyltriethoxysilane, N- (2-aminoethyl) -3-aminopropyltrimethoxysilane. , N- (2-aminoethyl) -3-aminopropylmethyldimethoxysilane, 3-ureidopropyltrimethoxysilane, 3-ureidopropyltriethoxysilane, N-ethoxycarbonyl-3-aminopropyltrimethoxysilane, N-ethoxy Carbonyl-3-aminopropyltriethoxysilane, N-triethoxysilylpropyltriethylenetriamine, N-trimethoxysilylpropyltriethylenetriamine, 10-trimethoxysilyl-1,4,7-triazadecane, 10-triethoxysilyl- 1,4,7-Triazadecane, 9-trimethoxysilyl-3,6-diazanonyl acetate, 9-triethoxysilyl-3,6-diazanonyl acetate, N-benzyl-3-aminopropyltrimethoxysilane, N-benzyl-3-aminopropyltriethoxysilane, N-phenyl-3-aminopropyltrimethoxysilane, N-phenyl-3-aminopropyltriethoxysilane, N-bis (oxyethylene) -3-aminopropyltrimethoxy Silane, N-bis (oxyethylene) -3-aminopropyltriethoxysilane, ethylene glycol diglycidyl ether, polyethylene glycol diglycidyl ether, propylene glycol diglycidyl ether, tripropylene glycol diglycidyl ether, polypropylene glycol diglycidyl ether, neo Pentyl glycol diglycidyl ether, 1,6-hexanediol diglycidyl ether, glycerin diglycidyl ether, 2,2-dibromoneopentyl glycol diglycidyl ether, 1,3,5,6-tetraglycidyl-2,4-hexanediol , N, N, N', N'-tetraglycidyl-m-xylene diamine, 1,3-bis (N, N-diglycidylaminomethyl) cyclohexane, N, N, N', N'-tetraglycidyl-4 , 4'-Diaminodiphenylmethane, 3- (N-allyl-N-glycidyl) aminopropyltrimethoxysilane, 3- (N, N-diglycidyl) aminopropyltrimethoxysilane and the like.
また、ラジカル発生膜の膜強度をさらに上げるためには、2,2’−ビス(4−ヒドロキシ−3,5−ジヒドロキシメチルフェニル)プロパン、テトラ(メトキシメチル)ビスフェノール等のフェノール化合物を添加してもよい。これらの化合物を使用する場合は、ラジカル発生膜形成組成物に含有される重合体の総量100質量部に対して0.1〜30質量部であることが好ましく、より好ましくは1〜20質量部である。 Further, in order to further increase the film strength of the radical generation film, a phenol compound such as 2,2'-bis (4-hydroxy-3,5-dihydroxymethylphenyl) propane or tetra (methoxymethyl) bisphenol is added. May be good. When these compounds are used, the amount is preferably 0.1 to 30 parts by mass, more preferably 1 to 20 parts by mass, based on 100 parts by mass of the total amount of the polymer contained in the radical generation film forming composition. Is.
さらに、ラジカル発生膜形成組成物には、上記の他、本発明の効果が損なわれない範囲であれば、ラジカル発生膜の誘電率や導電性などの電気特性を変化させる目的の誘電体や導電物質を添加してもよい。 Further, in addition to the above, the radical generating film forming composition includes a dielectric or a conductive material for changing the electrical characteristics such as the dielectric constant and the conductivity of the radical generating film as long as the effect of the present invention is not impaired. The substance may be added.
[ラジカル発生膜]
本発明のラジカル発生膜は、上記ラジカル発生膜形成組成物を用いて得られる。例えば、本発明に用いるラジカル発生膜形成組成物を、基板に塗布した後、乾燥・焼成を行うことで得られる硬化膜を、そのままラジカル発生膜として用いることもできる。また、この硬化膜をラビングしたり、偏光又は特定の波長の光等を照射したり、イオンビーム等の処理をしたり、PSA用配向膜として液晶充填後の液晶表示素子にUVを照射することも可能である。[Radical generation membrane]
The radical generation film of the present invention can be obtained by using the above radical generation film forming composition. For example, a cured film obtained by applying the radical generation film forming composition used in the present invention to a substrate and then drying and firing it can be used as it is as a radical generation film. In addition, rubbing this cured film, irradiating it with polarized light or light of a specific wavelength, treating it with an ion beam, etc., or irradiating the liquid crystal display element after filling the liquid crystal with UV as an alignment film for PSA. Is also possible.
ラジカル発生膜形成組成物を塗布する基板としては、透明性の高い基板であれば特に限定されないが、基板上に液晶を駆動するための透明電極が形成された基板が好ましい。
具体例を挙げると、ガラス板、ポリカーボネート、ポリ(メタ)アクリレート、ポリエーテルサルホン、ポリアリレート、ポリウレタン、ポリサルホン、ポリエーテル、ポリエーテルケトン、トリメチルペンテン、ポリオレフィン、ポリエチレンテレフタレート、(メタ)アクリロニトリル、トリアセチルセルロース、ジアセチルセルロース、アセテートブチレートセルロースなどのプラスチック板などに透明電極が形成された基板を挙げることができる。The substrate on which the radical generation film forming composition is applied is not particularly limited as long as it is a highly transparent substrate, but a substrate on which a transparent electrode for driving a liquid crystal is formed is preferable.
Specific examples include glass plate, polycarbonate, poly (meth) acrylate, polyether sulphon, poly arylate, polyurethane, poly sulphon, polyether, polyether ketone, trimethylpentene, polyolefin, polyethylene terephthalate, (meth) acrylonitrile, and tri. Examples thereof include a substrate in which a transparent electrode is formed on a plastic plate such as acetyl cellulose, diacetyl cellulose, or acetate butylate cellulose.
IPS方式の液晶表示素子に使用できる基板には、標準的なIPS櫛歯電極やPSAフィッシュボーン電極といった電極パターンやMVAのような突起パターンでも使用できる。
また、TFT型の素子のような高機能素子においては、液晶駆動のための電極と基板の間にトランジスタの如き素子が形成されたものが用いられる。
透過型の液晶表示素子を意図している場合は、上記の如き基板を用いることが一般的であるが、反射型の液晶表示素子を意図している場合では、片側の基板のみにならばシリコンウエハー等の不透明な基板も用いることが可能である。その際、基板に形成された電極には、光を反射するアルミニウムの如き材料を用いることもできる。As the substrate that can be used for the IPS liquid crystal display element, an electrode pattern such as a standard IPS comb tooth electrode or a PSA fishbone electrode or a protrusion pattern such as MVA can also be used.
Further, in a high-performance element such as a TFT type element, an element having an element such as a transistor formed between an electrode for driving a liquid crystal and a substrate is used.
When a transmissive liquid crystal display element is intended, it is common to use a substrate as described above, but when a reflective liquid crystal display element is intended, silicon is used only for one side of the substrate. An opaque substrate such as a wafer can also be used. At that time, a material such as aluminum that reflects light can be used for the electrodes formed on the substrate.
ラジカル発生膜形成組成物の塗布方法としては、スピンコート法、印刷法、インクジェット法、スプレー法、ロールコート法などが挙げられるが、生産性の面から工業的には転写印刷法が広く用いられており、本発明でも好適に用いられる。 Examples of the method for applying the radical-generating film-forming composition include a spin coating method, a printing method, an inkjet method, a spray method, and a roll coating method. From the viewpoint of productivity, the transfer printing method is widely used industrially. It is also suitably used in the present invention.
ラジカル発生膜形成組成物を塗布した後の乾燥の工程は、必ずしも必要とされないが、塗布後から焼成までの時間が基板ごとに一定していない場合、又は塗布後ただちに焼成されない場合には、乾燥工程を含める方が好ましい。この乾燥は、基板の搬送等により塗膜形状が変形しない程度に溶媒が除去されていればよく、その乾燥手段については特に限定されない。例えば、温度40℃〜150℃、好ましくは60℃〜100℃のホットプレート上で、0.5〜30分、好ましくは1〜5分乾燥させる方法が挙げられる。 The step of drying after applying the radical generation film forming composition is not always necessary, but if the time from application to firing is not constant for each substrate or if it is not fired immediately after coating, it is dried. It is preferable to include the step. The drying is not particularly limited as long as the solvent is removed to the extent that the shape of the coating film is not deformed by the transportation of the substrate or the like, and the drying means thereof is not particularly limited. For example, a method of drying on a hot plate having a temperature of 40 ° C. to 150 ° C., preferably 60 ° C. to 100 ° C. for 0.5 to 30 minutes, preferably 1 to 5 minutes can be mentioned.
上記の方法でラジカル発生膜形成組成物を塗布して形成される塗膜は、焼成して硬化膜とすることができる。その際、焼成温度は、通常100℃〜350℃の任意の温度で行うことができるが、好ましくは140℃〜300℃であり、より好ましくは150℃〜230℃、更に好ましくは160℃〜220℃である。焼成時間は通常5分〜240分の任意の時間で焼成を行うことができる。好ましくは10〜90分であり、より好ましくは20〜90分である。加熱は、通常公知の方法、例えば、ホットプレート、熱風循環オーブン、IRオーブン、ベルト炉などを用いることができる。 The coating film formed by applying the radical generation film forming composition by the above method can be fired to form a cured film. At that time, the firing temperature can be usually any temperature of 100 ° C. to 350 ° C., but is preferably 140 ° C. to 300 ° C., more preferably 150 ° C. to 230 ° C., and further preferably 160 ° C. to 220 ° C. ℃. The firing time is usually any time from 5 minutes to 240 minutes. It is preferably 10 to 90 minutes, more preferably 20 to 90 minutes. For heating, a generally known method, for example, a hot plate, a hot air circulation oven, an IR oven, a belt oven, or the like can be used.
この硬化膜の厚みは必要に応じて選択することができるが、好ましくは5nm以上、より好ましくは10nm以上の場合、液晶表示素子の信頼性が得られ易いので好適である。また、硬化膜の厚みが好ましくは300nm以下、より好ましくは150nm以下の場合は、液晶表示素子の消費電力が極端に大きくならないので好適である。 The thickness of the cured film can be selected as needed, but it is preferably 5 nm or more, more preferably 10 nm or more because the reliability of the liquid crystal display element can be easily obtained. Further, when the thickness of the cured film is preferably 300 nm or less, more preferably 150 nm or less, the power consumption of the liquid crystal display element does not become extremely large, which is preferable.
以上のようにしてラジカル発生膜を有する第一基板を得ることができるが、当該ラジカル発生膜に一軸配向処理を施すことができる。一軸配向処理を行う方法としては、光配向法、斜方蒸着法、ラビング、磁場による一軸配向処理等が挙げられる。 As described above, the first substrate having the radical generating film can be obtained, and the radical generating film can be subjected to the uniaxial orientation treatment. Examples of the method for performing the uniaxial alignment treatment include a photoalignment method, an orthorhombic deposition method, rubbing, and a uniaxial orientation treatment using a magnetic field.
一方向にラビング処理することによる配向処理を行う場合には、例えば、ラビング布が巻きつけられたラビングローラーを回転させながら、ラビング布と膜とが接触するように基板を移動させる。櫛歯電極が形成されている本発明の第一基板の場合、液晶の電気的物性によって方向が選択されるが、正の誘電異方性を有する液晶を用いる場合においてはラビング方向は櫛歯電極の延びている方向とほぼ同一の方向とすることが好ましい。 When the orientation treatment is performed by the rubbing treatment in one direction, for example, the substrate is moved so that the rubbing cloth and the film come into contact with each other while rotating the rubbing roller around which the rubbing cloth is wound. In the case of the first substrate of the present invention in which the comb tooth electrode is formed, the direction is selected depending on the electrical properties of the liquid crystal, but when a liquid crystal having positive dielectric anisotropy is used, the rubbing direction is the comb tooth electrode. It is preferable that the direction is substantially the same as the extending direction of.
本発明の第二基板は、ラジカル発生膜を有さないほかは、上記第一基板と同様である。従来から知られている液晶配向膜を有する基板とすることが好ましい。 The second substrate of the present invention is the same as the first substrate except that it does not have a radical generation film. It is preferable to use a substrate having a conventionally known liquid crystal alignment film.
<液晶セル>
本発明の液晶セルは、上記の方法により、基板にラジカル発生膜を形成した後、当該ラジカル発生膜を有する基板(第一基板)と、公知の液晶配向膜を有する基板(第二基板)とを、ラジカル発生膜と液晶配向膜とが向かい合うように配置し、スペーサーを挟んで、シール剤で固定し、液晶、カイラルドーパント及びラジカル重合性化合物を含有する液晶組成物を注入して封止することにより得られる。その際、用いるスペーサーの大きさは通常1〜30μmであるが、好ましくは2〜10μmである。
液晶、カイラルドーパント及びラジカル重合性化合物を含有する液晶組成物を注入する方法は特に制限されず、作製した液晶セル内を減圧にした後、液晶と重合性化合物を含む混合物を注入する真空法、液晶と重合性化合物とを含む混合物を滴下した後に封止を行う滴下法などを挙げることができる。<LCD cell>
The liquid crystal cell of the present invention comprises a substrate having the radical generating film (first substrate) and a substrate having a known liquid crystal alignment film (second substrate) after forming a radical generating film on the substrate by the above method. Is arranged so that the radical generating film and the liquid crystal alignment film face each other, the spacer is sandwiched between the two, fixed with a sealant, and a liquid crystal composition containing a liquid crystal, a chiral dopant and a radically polymerizable compound is injected and sealed. Obtained by At that time, the size of the spacer used is usually 1 to 30 μm, but preferably 2 to 10 μm.
The method of injecting a liquid crystal composition containing a liquid crystal, a chiral dopant and a radically polymerizable compound is not particularly limited, and a vacuum method in which a mixture containing the liquid crystal and the polymerizable compound is injected after the inside of the produced liquid crystal cell is depressurized. Examples thereof include a dropping method in which a mixture containing a liquid crystal and a polymerizable compound is dropped and then sealed.
<液晶、カイラルドーパント及びラジカル重合性化合物を含有する液晶組成物>
本発明の液晶表示素子の作成において、液晶とともに用いる重合性化合物は、ラジカル重合性化合物であれば特に限定されないが、例えば、一分子中に一個又は二個以上の重合性不飽和結合を有する化合物である。好ましくは一分子中に一個の重合性不飽和結合を有する化合物である(以下、「一官能の重合性基を有する化合物」、「単官能の重合性基を有する化合物」等と称する場合がある)。重合性不飽和結合は、好ましくはラジカル重合性不飽和結合であり、例えばビニル結合である。<Liquid crystal composition containing liquid crystal, chiral dopant and radically polymerizable compound>
In the production of the liquid crystal display element of the present invention, the polymerizable compound used together with the liquid crystal is not particularly limited as long as it is a radically polymerizable compound, but for example, a compound having one or two or more polymerizable unsaturated bonds in one molecule. Is. It is preferably a compound having one polymerizable unsaturated bond in one molecule (hereinafter, it may be referred to as "a compound having a monofunctional polymerizable group", "a compound having a monofunctional polymerizable group" or the like. ). The polymerizable unsaturated bond is preferably a radically polymerizable unsaturated bond, for example a vinyl bond.
前記ラジカル重合性化合物のうち少なくとも一種は、液晶と相溶性を有する、一分子中に一個の重合性不飽和結合を有する化合物、すなわち、単官能のラジカル重合性基を有する化合物であることが好ましい。 At least one of the radically polymerizable compounds is preferably a compound having a polymerizable unsaturated bond in one molecule and having compatibility with liquid crystal, that is, a compound having a monofunctional radically polymerizable group. ..
そして、前記ラジカル重合性化合物の重合性基としては以下の構造から選ばれる重合性基が好ましい。
(式中、*は化合物分子の重合性不飽和結合以外の部分との結合部位を示す)As the polymerizable group of the radically polymerizable compound, a polymerizable group selected from the following structures is preferable.
(In the formula, * indicates the binding site of the compound molecule with a portion other than the polymerizable unsaturated bond)
また、前記液晶、カイラルドーパント及びラジカル重合性化合物を含有する液晶組成物において、前記ラジカル重合性化合物を重合させて得られるポリマーのTgが100℃以下のものになるラジカル重合性化合物を含有することが好ましい。 Further, in the liquid crystal composition containing the liquid crystal, the chiral dopant and the radical polymerizable compound, the radical polymerizable compound having a Tg of 100 ° C. or less of the polymer obtained by polymerizing the radical polymerizable compound is contained. Is preferable.
単官能のラジカル重合性基を有する化合物は、有機ラジカルの存在下でラジカル重合を行うことが可能な不飽和結合を有するものであり、例えば、t−ブチルメタクリレート、ヘキシルメタクリレート、2−エチルヘキシルメタクリレート、ノニルメタクリレート、ラウリルメタクリレート、n−オクチルメタクリレートなどのメタクリレート系モノマー;t−ブチルアクリレート、ヘキシルアクリレート、2−エチルヘキシルアクリレート、ノニルアクリレート、ベンジルアクリレート、ラウリルアクリレート、n−オクチルアクリレートなどのアクリレート系モノマー;スチレン、スチレン誘導体(例えば、o−、m−、p−メトキシスチレン、o−、m−、p−t−ブトキシスチレン、o−、m−、p−クロロメチルスチレンなど)、ビニルエステル類(例えば、酢酸ビニル、プロピオン酸ビニル、安息香酸ビニル、酢酸ビニルなど)、ビニルケトン類(例えば、ビニルメチルケトン、ビニルヘキシルケトン、メチルイソプロペニルケトンなど)、N−ビニル化合物(例えば、N−ビニルピロリドン、N−ビニルピロール、N−ビニルカルバゾール、N−ビニルインドールなど)、(メタ)アクリル酸誘導体(例えば、アクリロニトリル、メタアクリロニトリル、アクリルアミド、イソプロピルアクリルアミド、メタクリルアミドなど)、ハロゲン化ビニル類(例えば、塩化ビニル、塩化ビニリデン、テトラクロロエチレン、ヘキサクロロプレン、フッ化ビニルなど)などのビニルモノマーが挙げられるが、これらに限定はしない。これらの各種ラジカル重合性モノマーは、単独で使用しても、2種以上を併用してもよい。また、これらは、液晶と相溶性を有することが好ましい。 A compound having a monofunctional radically polymerizable group has an unsaturated bond capable of performing radical polymerization in the presence of an organic radical, and is, for example, t-butyl methacrylate, hexyl methacrylate, 2-ethylhexyl methacrylate, etc. Methacrylate monomers such as nonyl methacrylate, lauryl methacrylate, n-octyl methacrylate; acrylate monomers such as t-butyl acrylate, hexyl acrylate, 2-ethylhexyl acrylate, nonyl acrylate, benzyl acrylate, lauryl acrylate, n-octyl acrylate; styrene, Styrene derivatives (eg, o-, m-, p-methoxystyrene, o-, m-, pt-butoxystyrene, o-, m-, p-chloromethylstyrene, etc.), vinyl esters (eg, acetate) Vinyl, vinyl propionate, vinyl benzoate, vinyl acetate, etc.), vinyl ketones (eg, vinyl methyl ketone, vinyl hexyl ketone, methyl isopropenyl ketone, etc.), N-vinyl compounds (eg, N-vinylpyrrolidone, N-vinyl, etc.) Pyrrole, N-vinylcarbazole, N-vinylindole, etc.), (meth) acrylic acid derivatives (eg, acrylonitrile, metaacrylonitrile, acrylamide, isopropylacrylamide, methacrylicamide, etc.), vinyl halides (eg, vinyl chloride, vinylidene chloride, etc.) , Tetrachloroethylene, hexachloroprene, vinyl fluoride, etc.), but are not limited thereto. These various radically polymerizable monomers may be used alone or in combination of two or more. Moreover, it is preferable that these have compatibility with the liquid crystal.
液晶組成物中のラジカル重合性化合物の含有量は、液晶とラジカル重合性化合物との合計質量に対して、好ましくは0.1質量%以上、より好ましくは1質量%以上であり、好ましくは50質量%以下、より好ましくは20質量%以下である。 The content of the radically polymerizable compound in the liquid crystal composition is preferably 0.1% by mass or more, more preferably 1% by mass or more, and preferably 50, based on the total mass of the liquid crystal and the radically polymerizable compound. It is mass% or less, more preferably 20 mass% or less.
前記ラジカル重合性化合物を重合させて得られるポリマーは、そのTgを100℃以下とすることが好ましい。 The Tg of the polymer obtained by polymerizing the radically polymerizable compound is preferably 100 ° C. or lower.
なお、液晶とは一般に固体と液体の両方の性質を示す状態にある物質をいい、代表的な液晶相としてネマティック液晶とスメクティック液晶があるが、本発明において使用できる液晶は特に限定されない。一例を挙げれば4−ペンチル−4’−シアノビフェニルである。 The liquid crystal generally refers to a substance that exhibits both solid and liquid properties, and there are nematic liquid crystal and smectic liquid crystal as typical liquid crystal phases, but the liquid crystal that can be used in the present invention is not particularly limited. One example is 4-pentyl-4'-cyanobiphenyl.
カイラルドーパントとは、コレステリック液晶を得るために、ネマティック液晶に少量添加される光学活性化合物をいう。カイラルドーパントは、必ずしも液晶性を示す必要はないが、液晶性であってもよい。一般に、カイラルドーパントは、ネマティック液晶分子が互いに対してわずかな角度で整列するように働く分子間力を生み出す。
コレステリック液晶のらせんピッチは、カイラルドーパントの構造や添加量によって可変である。
カイラルドーパントの具体例としては、非重合性キラル化合物では、例えば、R−811、S−811、R−1011、S−1011、R−2011、S−2011、R−3011、S−3011、R−4011、S−4011、R−5011、S−5011、又はCB15(Merck社)のような標準的なキラルドーパント、WO98/00428A1に記載されるようなソルビトール類、GB2,328,207に記載されるようなヒドロベンゾイン類、WO02/94805A1に記載されるようなキラルなビナフトール類、WO02/34739A1に記載されるようなキラルなビナフトールアセタール類、WO02/06265A1に記載されるようなキラルなTADDOL類、またはWO02/06196A1又はWO02/06195A1に記載されるようなフッ素化された架橋基を有するキラル化合物が挙げられる。重合性キラル化合物としては、例えば、重合性キラル材料Paliocolor(登録商標)LC756(BASF社)等が挙げられる。
カイラルドーパントの添加量はどの程度のツイスト角、ツイストピッチにするかで適宜量を調整する必要があるが、通常0.001質量%〜1質量%の範囲である。The chiral dopant refers to an optically active compound added in a small amount to a nematic liquid crystal in order to obtain a cholesteric liquid crystal. The chiral dopant does not necessarily have to be liquid crystal, but may be liquid crystal. In general, chiral dopants produce intermolecular forces that act to align nematic liquid crystal molecules at a slight angle to each other.
The spiral pitch of the cholesteric liquid crystal is variable depending on the structure of the chiral dopant and the amount of addition.
Specific examples of chiral dopants include non-polymerizable chiral compounds such as R-811, S-811, R-1011, S-1011, R-2011, S-2011, R-3011, S-3011, R. -4011, S-4011, R-5011, S-5011, or standard chiral dopants such as CB15 (Merck), sorbitols as described in WO98 / 00248A1, GB2,328,207. Hydrobenzoins, chiral binaphthols as described in WO02 / 94805A1, chiral binaphthol acetals as described in WO02 / 34739A1, chiral TADDOLs as described in WO02 / 06265A1, Alternatively, a chiral compound having a fluorinated cross-linking group as described in WO02 / 06196A1 or WO02 / 06195A1 can be mentioned. Examples of the polymerizable chiral compound include a polymerizable chiral material Pariocolor (registered trademark) LC756 (BASF).
The amount of the chiral dopant added needs to be appropriately adjusted depending on the twist angle and twist pitch, but is usually in the range of 0.001% by mass to 1% by mass.
次に、この液晶、カイラルドーパントとラジカル重合性化合物とを含む混合物(液晶組成物)が導入された液晶セルに当該ラジカル重合性化合物を重合反応させるのに十分なエネルギーを与える。これは、例えば、熱を加えるか、UV照射することにより実施することができ、当該ラジカル重合性化合物がその場で重合されることで、所望の特性が発現する。中でもUVの使用は配向性のパターニングが可能となり、更に短時間で重合反応させられる点で、UV照射が好ましい。 Next, sufficient energy is given to the liquid crystal cell into which the liquid crystal, a mixture containing the chiral dopant and the radically polymerizable compound (liquid crystal composition) is introduced, to carry out the polymerization reaction of the radically polymerizable compound. This can be done, for example, by applying heat or UV irradiation, and the radically polymerizable compound is polymerized in situ to exhibit the desired properties. Among them, UV irradiation is preferable because the use of UV enables orientation patterning and the polymerization reaction can be carried out in a shorter time.
またUV照射の際、加熱を行ってもよい。UV照射を行う際の加熱温度は、導入された液晶が液晶性を発現する温度範囲が好ましく、通常40℃以上であり、液晶の等方相に変わる温度未満での加熱が好ましい。 Further, heating may be performed during UV irradiation. The heating temperature at the time of UV irradiation is preferably in the temperature range in which the introduced liquid crystal exhibits liquid crystal properties, and is usually 40 ° C. or higher, preferably below a temperature at which the liquid crystal changes to an isotropic phase.
ここで、UV照射する場合におけるUV照射波長は、反応する重合性化合物の反応量子収率の最も良い波長を選択することが好ましく、UVの照射量は、通常0.01〜30J/cm2であるが、好ましくは、10J/cm2以下であり、UV照射量が少ないほうが、液晶ディスプレイを構成する部材の破壊からなる信頼性低下を抑制でき、かつUV照射時間を減らせることで製造上のタクトが向上するので好適である。313nmを含む波長範囲で長時間照射してもよい。Here, as the UV irradiation wavelength in the case of UV irradiation, it is preferable to select the wavelength having the best reaction quantum yield of the reactive polymerizable compound, and the UV irradiation amount is usually 0.01 to 30 J / cm 2 . However, preferably, when the UV irradiation amount is 10 J / cm 2 or less and the UV irradiation amount is small, the reliability deterioration due to the destruction of the members constituting the liquid crystal display can be suppressed, and the UV irradiation time can be reduced, so that the manufacturing process can be performed. It is suitable because it improves tact. Irradiation may be performed for a long time in a wavelength range including 313 nm.
また、UV照射ではなく、加熱のみで重合させる場合の加熱は、重合性化合物の反応する温度であって、液晶の分解温度未満となる温度範囲で行うことが好ましい。具体的には、例えば、40℃以上100℃以下である。 Further, it is preferable that the heating in the case of polymerizing only by heating instead of UV irradiation is performed in a temperature range in which the temperature at which the polymerizable compound reacts and is lower than the decomposition temperature of the liquid crystal. Specifically, for example, it is 40 ° C. or higher and 100 ° C. or lower.
ラジカル重合性化合物を重合反応させるのに十分なエネルギーを与えるとき、電圧を印加しない、無電界状態であることが好ましい。 When sufficient energy is applied to carry out the polymerization reaction of the radically polymerizable compound, it is preferable that no voltage is applied and the state is in an electric field-free state.
<液晶表示素子>
このようにして得られた液晶セルを用いて液晶表示素子を作製することができる。
例えば、この液晶セルに必要に応じて反射電極、透明電極、λ/4板、偏光膜、カラーフィルター層等を常法に従って設けることにより反射型液晶表示素子とすることができる。
また、この液晶セルに必要に応じてバックライト、偏光板、λ/4板、透明電極、偏光膜、カラーフィルター層等を常法に従って設けることにより透過型液晶表示素子とすることができる。<Liquid crystal display element>
A liquid crystal display element can be manufactured using the liquid crystal cell thus obtained.
For example, a reflective liquid crystal display element can be obtained by providing the liquid crystal cell with a reflective electrode, a transparent electrode, a λ / 4 plate, a polarizing film, a color filter layer, or the like according to a conventional method, if necessary.
Further, a transmissive liquid crystal display element can be obtained by providing the liquid crystal cell with a backlight, a polarizing plate, a λ / 4 plate, a transparent electrode, a polarizing film, a color filter layer and the like according to a conventional method, if necessary.
本発明を実施例により具体的に説明するが、本発明はこれらの実施例に限定されない。ポリマーの重合および膜形成組成物の調製で使用した化合物の略号、及び特性評価の方法は以下のとおりである。 The present invention will be specifically described with reference to Examples, but the present invention is not limited to these Examples. The abbreviations of the compounds used in the polymerization of the polymer and the preparation of the film-forming composition, and the method for evaluating the properties are as follows.
NMP:N−メチル−2−ピロリドン、
GBL:γ―ブチルラクトン、
BCS:ブチルセロソルブNMP: N-methyl-2-pyrrolidone,
GBL: γ-butyl lactone,
BCS: Butyl cellosolve
<粘度測定>
ポリアミド酸溶液について、E型粘度計TVE−22H(東機産業社製)を用い、サンプル量1.1mL、コーンロータTE−1(1°34’、R24)にて25℃の粘度を測定した。<Viscosity measurement>
The viscosity of the polyamic acid solution was measured at 25 ° C. using an E-type viscometer TVE-22H (manufactured by Toki Sangyo Co., Ltd.) with a sample volume of 1.1 mL and a cone rotor TE-1 (1 ° 34', R24). ..
<イミド化率の測定>
ポリイミド粉末20mgをNMRサンプル管(草野科学社製 NMRサンプリングチューブスタンダード φ5)に入れ、重水素化ジメチルスルホキシド(DMSO−d6、0.05質量%TMS(テトラメチルシラン)混合品)0.53mlを添加し、超音波をかけて完全に溶解させた。この溶液の500MHzのプロトンNMRを、測定装置(日本電子データム社製、JNW−ECA500)にて測定した。
イミド化率は、イミド化前後で変化しない構造に由来するプロトンを基準プロトンとして決め、このプロトンのピーク積算値と、9.5〜10.0ppm付近に現れるアミド基のNHに由来するプロトンピーク積算値とを用い以下の式によって求めた。
イミド化率(%)=(1−α・x/y)×100
式中、xはアミド基のNH由来のプロトンピーク積算値、yは基準プロトンのピーク積算値、αはポリアミド酸(イミド化率が0%)の場合におけるアミド基のNHプロトン1個に対する基準プロトンの個数割合である。<Measurement of imidization rate>
20 mg of polyimide powder is placed in an NMR sample tube (NMR sampling tube standard φ5 manufactured by Kusano Kagaku Co., Ltd.), and 0.53 ml of deuterated dimethyl sulfoxide (DMSO-d6, 0.05 mass% TMS (tetramethylsilane) mixture) is added. Then, it was completely dissolved by applying ultrasonic waves. The 500 MHz proton NMR of this solution was measured with a measuring device (JNW-ECA500 manufactured by JEOL Datum Ltd.).
The imidization rate is determined by using a proton derived from a structure that does not change before and after imidization as a reference proton, and the peak integrated value of this proton and the proton peak integrated value derived from NH of the amide group appearing in the vicinity of 9.5 to 10.0 ppm. It was calculated by the following formula using the value.
Imidization rate (%) = (1-α · x / y) × 100
In the formula, x is the integrated value of the NH-derived proton peak of the amide group, y is the integrated value of the peak of the reference proton, and α is the reference proton for one NH proton of the amide group in the case of polyamic acid (imidization rate is 0%). It is the number ratio of.
<ポリマーの重合およびラジカル発生膜形成組成物の調製>
合成例1
TC−1、TC−2(50)/DA−1(50)、DA−2(50) ポリイミドの重合
窒素導入管、空冷管、メカニカルスターラーを備えた100mlの4口フラスコに、DA−1を1.62g(15.00mmol)、DA−2を3.96g(15.00mmol)測り取り、NMP48.2gを加え窒素雰囲気下で撹拌し、完全に溶解させた。溶解を確認した後、TC−2を3.75g(15.00mmol)加え、窒素雰囲気下60℃で3時間反応させ。再び室温に戻し、TC−1を2.71g(13.80mmol)を加え、窒素雰囲気下40℃で12時間反応させた。重合粘度を確認し、重合粘度が1000mPa・sになるように更にTC−1を添加し、ポリアミック酸濃度が20質量%の重合液を得た。
マグネティックスターラーを備えた200mlの三角フラスコに、上記で得られたポリアミック酸溶液60gを測り取り、NMPを111.4g加え、7質量%の溶液を調整し、撹拌しながら無水酢酸を9.10g(88.52mmol)、ピリジンを3.76g(47.53mmol)加え、室温で30分撹拌後、55℃で3時間撹拌し反応させた。反応終了後、溶液を室温に戻し、500mlのメタノール中に撹拌しながらこの反応溶液を注ぎ、固体を析出させた。個体をろ過により回収し、更に300mlのメタノール中に固体を投入し30分間撹拌洗浄を計2回行い、固体をろ過により回収し、風乾を行った後、真空オーブン60℃にて乾燥を行うことで数平均分子量は11300、重量平均分子量は32900、イミド化率が53%のポリイミド(PI−1)を得た。<Polymer polymerization and preparation of radical generation film forming composition>
Synthesis example 1
TC-1, TC-2 (50) / DA-1 (50), DA-2 (50) Polyimide Polymerization DA-1 is placed in a 100 ml 4-neck flask equipped with a nitrogen introduction tube, an air cooling tube, and a mechanical stirrer. 1.62 g (15.00 mmol) and DA-2 were measured at 3.96 g (15.00 mmol), NMP 48.2 g was added, and the mixture was stirred under a nitrogen atmosphere to completely dissolve it. After confirming the dissolution, 3.75 g (15.00 mmol) of TC-2 was added, and the mixture was reacted at 60 ° C. for 3 hours under a nitrogen atmosphere. The temperature was returned to room temperature again, 2.71 g (13.80 mmol) of TC-1 was added, and the mixture was reacted at 40 ° C. for 12 hours under a nitrogen atmosphere. The polymerization viscosity was confirmed, and TC-1 was further added so that the polymerization viscosity became 1000 mPa · s to obtain a polymerization solution having a polyamic acid concentration of 20% by mass.
In a 200 ml Erlenmeyer flask equipped with a magnetic stirrer, weigh 60 g of the polyamic acid solution obtained above, add 111.4 g of NMP to prepare a 7 mass% solution, and add 9.10 g of anhydrous acetic acid with stirring. 88.52 mmol) and 3.76 g (47.53 mmol) of pyridine were added, and the mixture was stirred at room temperature for 30 minutes and then at 55 ° C. for 3 hours for reaction. After completion of the reaction, the solution was returned to room temperature and the reaction solution was poured into 500 ml of methanol with stirring to precipitate a solid. The solid is collected by filtration, the solid is further added to 300 ml of methanol, and the mixture is stirred and washed twice for 30 minutes. The solid is collected by filtration, air-dried, and then dried in a vacuum oven at 60 ° C. A polyimide (PI-1) having a number average molecular weight of 11300, a weight average molecular weight of 32900, and an imidization rate of 53% was obtained.
合成例2
TC−1、TC−2(50)/DA−1(50)、DA−3(50)ポリイミドの重合
窒素導入管、空冷管、メカニカルスターラーを備えた100mlの4口フラスコに、DA−1を1.62g(15.00mmol)、DA−3を4.96g(15.00mmol)測り取り、NMP51.90gを加え窒素雰囲気下で撹拌し、完全に溶解させた。溶解を確認した後、TC−2を3.75g(15.00mmol)加え、窒素雰囲気下60℃で3時間反応させ。再び室温に戻し、TC−1を2.64g(13.5mmol)加え、窒素雰囲気下40℃で12時間反応させた。重合粘度を確認し、重合粘度が1000mPa・sになるように更にTC−1を添加し、ポリアミック酸濃度が20質量%の重合液を得た。
マグネティックスターラーを備えた200mlの三角フラスコに、上記で得られたポリアミック酸溶液60gを測り取り、NMPを111.4g加え加え、7質量%の溶液を調整し、撹拌しながら無水酢酸を8.38g(81.4mmol)、ピリジンを3.62g(45.8mmol)加え、室温で30分撹拌後、55℃で3時間撹拌し反応させた。反応終了後、溶液を室温に戻し、500mlのメタノール中に撹拌しながらこの反応溶液を注ぎ、固体を析出させた。個体をろ過により回収し、更に300mlのメタノール中に固体を投入し30分間撹拌洗浄を計2回行い、固体をろ過により回収し、風乾を行った後、真空オーブン60℃にて乾燥を行うことで数平均分子量Mnは13100、重量平均分子量Mwは34000、イミド化率が55%のポリイミド(PI−2)を得た。Synthesis example 2
Polymerization of TC-1, TC-2 (50) / DA-1 (50), DA-3 (50) polyimides DA-1 is placed in a 100 ml 4-neck flask equipped with a nitrogen introduction tube, an air cooling tube, and a mechanical stirrer. 1.62 g (15.00 mmol) and DA-3 were measured at 4.96 g (15.00 mmol), 51.90 g of NMP was added, and the mixture was stirred under a nitrogen atmosphere to completely dissolve it. After confirming the dissolution, 3.75 g (15.00 mmol) of TC-2 was added, and the mixture was reacted at 60 ° C. for 3 hours under a nitrogen atmosphere. The temperature was returned to room temperature again, 2.64 g (13.5 mmol) of TC-1 was added, and the mixture was reacted at 40 ° C. for 12 hours under a nitrogen atmosphere. The polymerization viscosity was confirmed, and TC-1 was further added so that the polymerization viscosity became 1000 mPa · s to obtain a polymerization solution having a polyamic acid concentration of 20% by mass.
In a 200 ml Erlenmeyer flask equipped with a magnetic stirrer, weigh 60 g of the polyamic acid solution obtained above, add 111.4 g of NMP to prepare a 7 mass% solution, and add 8.38 g of anhydrous acetic acid with stirring. (81.4 mmol) and 3.62 g (45.8 mmol) of pyridine were added, and the mixture was stirred at room temperature for 30 minutes and then at 55 ° C. for 3 hours for reaction. After completion of the reaction, the solution was returned to room temperature and the reaction solution was poured into 500 ml of methanol with stirring to precipitate a solid. The solid is collected by filtration, the solid is further added to 300 ml of methanol, and the mixture is stirred and washed twice for 30 minutes. The solid is collected by filtration, air-dried, and then dried in a vacuum oven at 60 ° C. A polyimide (PI-2) having a number average molecular weight Mn of 13100, a weight average molecular weight Mw of 34000, and an imidization rate of 55% was obtained.
合成例3
TC−1、TC−2(50)/DA−1(50)、DA−4(50)ポリイミドの重合
窒素導入管、空冷管、メカニカルスターラーを備えた100mlの4口フラスコに、DA−1を1.62g(15.00mmol)、DA−4を5.65g(15.00mmol)測り取り、NMP55.4gを加え窒素雰囲気下で撹拌し、完全に溶解させた。溶解を確認した後、TC−2を3.75g(15.00mmol)加え、窒素雰囲気下60℃で3時間反応させ。再び室温に戻し、TC−1を2.82g(14.40mmol)加え、窒素雰囲気下40℃で12時間反応させた。重合粘度を確認し、重合粘度が1000mPa・sになるように更にTC−1を添加し、ポリアミック酸濃度が20質量%の重合液を得た。
マグネティックスターラーを備えた200mlの三角フラスコに、上記で得られたポリアミック酸溶液60gを測り取り、NMPを111.4g加え、7質量%の溶液を調整し、撹拌しながら無水酢酸を8.36g(81.2mmol)、ピリジンを3.65g(46.1mmol)加え、室温で30分撹拌後、55℃で3時間撹拌し反応させた。反応終了後、溶液を室温に戻し、500mlのメタノール中に撹拌しながらこの反応溶液を注ぎ、固体を析出させた。個体をろ過により回収し、更に300mlのメタノール中に固体を投入し30分間撹拌洗浄を計2回行い、固体をろ過により回収し、風乾を行った後、真空オーブン60℃にて乾燥を行うことで数平均分子量Mnは12900、重量平均分子量Mwは31000、イミド化率が51%のポリイミド(PI−3)を得た。Synthesis example 3
Polymerization of TC-1, TC-2 (50) / DA-1 (50), DA-4 (50) polyimides DA-1 is placed in a 100 ml 4-neck flask equipped with a nitrogen introduction tube, an air cooling tube, and a mechanical stirrer. 1.62 g (15.00 mmol) and DA-4 were weighed at 5.65 g (15.00 mmol), 55.4 g of NMP was added, and the mixture was stirred under a nitrogen atmosphere to completely dissolve it. After confirming the dissolution, 3.75 g (15.00 mmol) of TC-2 was added, and the mixture was reacted at 60 ° C. for 3 hours under a nitrogen atmosphere. The temperature was returned to room temperature again, 2.82 g (14.40 mmol) of TC-1 was added, and the mixture was reacted at 40 ° C. for 12 hours under a nitrogen atmosphere. The polymerization viscosity was confirmed, and TC-1 was further added so that the polymerization viscosity became 1000 mPa · s to obtain a polymerization solution having a polyamic acid concentration of 20% by mass.
In a 200 ml Erlenmeyer flask equipped with a magnetic stirrer, weigh 60 g of the polyamic acid solution obtained above, add 111.4 g of NMP to prepare a 7 mass% solution, and add 8.36 g of anhydrous acetic acid with stirring. 81.2 mmol) and 3.65 g (46.1 mmol) of pyridine were added, and the mixture was stirred at room temperature for 30 minutes and then at 55 ° C. for 3 hours for reaction. After completion of the reaction, the solution was returned to room temperature and the reaction solution was poured into 500 ml of methanol with stirring to precipitate a solid. The solid is collected by filtration, the solid is further added to 300 ml of methanol, and the mixture is stirred and washed twice for 30 minutes. The solid is collected by filtration, air-dried, and then dried in a vacuum oven at 60 ° C. A polyimide (PI-3) having a number average molecular weight Mn of 12900, a weight average molecular weight Mw of 31000, and an imidization rate of 51% was obtained.
ラジカル発生膜形成組成物:AL1の調製
マグネティックスターラーを備えた50ml三角フラスコに、合成例1で得られたポリイミド粉末(PI−1)を2.0g測り取り、NMPを18.0g加え、50℃で撹拌し、完全に溶解させた。更にNMPを6.7g、BCSを6.7g加え、更に3時間撹拌することで本発明に係るラジカル発生膜形成組成物:AL1(固形分:6.0質量%、NMP:66質量%、BCS:30質量%)を得た。Radical Generation Membrane Formation Composition: Preparation of AL1 Weigh 2.0 g of the polyimide powder (PI-1) obtained in Synthesis Example 1 into a 50 ml Erlenmeyer flask equipped with a magnetic stirrer, add 18.0 g of NMP, and add 50 ° C. It was stirred with and completely dissolved. Further, 6.7 g of NMP and 6.7 g of BCS were added, and the mixture was further stirred for 3 hours to form a radical generation film-forming composition according to the present invention: AL1 (solid content: 6.0% by mass, NMP: 66% by mass, BCS). : 30% by mass) was obtained.
ラジカル発生膜形成組成物:AL2の調製
マグネティックスターラーを備えた50ml三角フラスコに、合成例2で得られたポリイミド粉末(PI−2)を2.0g測り取り、NMPを18.0g加え、50℃で撹拌し、完全に溶解させた。更にNMPを6.7g、BCSを6.7g加え、更に3時間撹拌することで本発明に係るラジカル発生膜形成組成物:AL2(固形分:6.0質量%、NMP:66質量%、BCS:30質量%)を得た。Radical generation film-forming composition: Preparation of AL2 In a 50 ml Erlenmeyer flask equipped with a magnetic stirrer, 2.0 g of the polyimide powder (PI-2) obtained in Synthesis Example 2 was measured, 18.0 g of NMP was added, and the temperature was 50 ° C. It was stirred with and completely dissolved. Further, 6.7 g of NMP and 6.7 g of BCS were added, and the mixture was further stirred for 3 hours to form a radical generation film-forming composition according to the present invention: AL2 (solid content: 6.0% by mass, NMP: 66% by mass, BCS). : 30% by mass) was obtained.
非ラジカル発生膜形成組成物:AL3の調製
マグネティックスターラーを備えた50ml三角フラスコに、合成例3で得られたポリイミド粉末(PI−3)を2.0g測り取り、NMPを18.0g加え、50℃で撹拌し、完全に溶解させた。更にNMPを6.7g、BCSを6.7g加え、更に3時間撹拌することで比較対象とする非ラジカル発生膜形成組成物:AL3(固形分:6.0質量%、NMP:66質量%、BCS:30質量%)を得た。Non-radical generation film forming composition: Preparation of AL3 In a 50 ml Erlenmeyer flask equipped with a magnetic stirrer, 2.0 g of the polyimide powder (PI-3) obtained in Synthesis Example 3 was measured, 18.0 g of NMP was added, and 50 was added. The mixture was stirred at ° C and completely dissolved. Further, 6.7 g of NMP and 6.7 g of BCS were added, and the mixture was further stirred for 3 hours to compare a non-radical generation film-forming composition: AL3 (solid content: 6.0% by mass, NMP: 66% by mass, BCS: 30% by mass) was obtained.
<液晶表示素子の作製>
上記で得たAL1〜AL3及び水平配向用の液晶配向剤であるSE−6414(日産化学株式会社製)を用い、表3に示す構成で液晶表示素子を作製した。<Manufacturing of liquid crystal display element>
Using AL1 to AL3 obtained above and SE-6414 (manufactured by Nissan Chemical Industries, Ltd.), which is a liquid crystal alignment agent for horizontal alignment, a liquid crystal display element was produced with the configuration shown in Table 3.
(第一基板)
第一基板(以後IPS基板ともいう)は、30mm×35mmの大きさで、厚さが0.7mmの無アルカリガラス基板である。基板上には電極幅が10μm、電極と電極の間隔が10μmの櫛歯型パターンを備えたITO(Indium−Tin−Oxide)電極が形成され、画素を形成している。各画素のサイズは、縦10mmで横約5mmである。
AL1〜AL3又はSE−6414は、1.0μmのフィルターで濾過した後、上記IPS基板の電極形成面にスピンコート法にて塗布し、80℃のホットプレート上で1分間乾燥させた。次いで、AL1〜AL3は150℃で20分間、SE−6414は220℃で20分焼成し、焼成して、それぞれ膜厚100nmの塗膜とした。
ラビング処理「有り」では、ラビング方向が櫛歯電極と平行になるようにラビングした。ラビングは吉川化工製のレーヨン布:YA−20Rを用い、ロール径120mm、回転数300rpm、移動速度50mm/sec、押し込み量0.4mmの条件にて行った。ただし、SE−6414を塗布した膜のみ上記の回転数を1000rpmにした。ラビング処理後は、純水中にて1分間超音波照射を行い、80℃で10分間乾燥した。(First board)
The first substrate (hereinafter, also referred to as IPS substrate) is a non-alkali glass substrate having a size of 30 mm × 35 mm and a thickness of 0.7 mm. An ITO (Indium-Tin-Oxide) electrode having a comb-tooth pattern having an electrode width of 10 μm and an electrode-to-electrode distance of 10 μm is formed on the substrate to form pixels. The size of each pixel is 10 mm in length and about 5 mm in width.
AL1 to AL3 or SE-6414 were filtered through a 1.0 μm filter, then applied to the electrode forming surface of the IPS substrate by a spin coating method, and dried on a hot plate at 80 ° C. for 1 minute. Next, AL1 to AL3 were fired at 150 ° C. for 20 minutes, and SE-6414 was fired at 220 ° C. for 20 minutes and fired to obtain a coating film having a film thickness of 100 nm.
In the rubbing treatment "Yes", rubbing was performed so that the rubbing direction was parallel to the comb tooth electrode. The rubbing was performed using a rayon cloth manufactured by Yoshikawa Kako: YA-20R under the conditions of a roll diameter of 120 mm, a rotation speed of 300 rpm, a moving speed of 50 mm / sec, and a pushing amount of 0.4 mm. However, the above rotation speed was set to 1000 rpm only for the film coated with SE-6414. After the rubbing treatment, ultrasonic irradiation was performed in pure water for 1 minute, and the mixture was dried at 80 ° C. for 10 minutes.
(第二基板)
第二基板(裏面ITO基板ともいう)は、30mm×35mmの大きさで、厚さが0.7mmの無アルカリガラス基板であり、裏面(セルの外側を向く面)にITO膜が成膜されている。また、表面(セルの内側を向く面)には高さ4μmの柱状のスペーサーが形成されている。
AL1、AL2又はSE−6414は、1.0μmのフィルターで濾過した後、上記IPS基板の電極形成面にスピンコート法にて塗布し、80℃のホットプレート上で1分間乾燥させた。次いで、AL1、AL2は150℃で20分間、SE−6414は220℃で20分焼成し、焼成して、それぞれ膜厚100nmの塗膜とした後、ラビング処理を行った。ラビング処理は、吉川化工製のレーヨン布:YA−20Rを用い、ロール径120mm、回転数1000rpm、移動速度50mm/sec、押し込み量0.4mmの条件にてラビングを行った。ただし、AL1またはAL2を塗布した膜は上記の回転数を300rpmにした。ラビング処理後は、純水中にて1分間超音波照射を行い、80℃で10分間乾燥した。(Second board)
The second substrate (also referred to as the back surface ITO substrate) is a non-alkali glass substrate having a size of 30 mm × 35 mm and a thickness of 0.7 mm, and an ITO film is formed on the back surface (the surface facing the outside of the cell). ing. Further, a columnar spacer having a height of 4 μm is formed on the surface (the surface facing the inside of the cell).
AL1, AL2 or SE-6414 was filtered through a 1.0 μm filter, then applied to the electrode-forming surface of the IPS substrate by a spin coating method, and dried on a hot plate at 80 ° C. for 1 minute. Next, AL1 and AL2 were fired at 150 ° C. for 20 minutes, and SE-6414 was fired at 220 ° C. for 20 minutes to obtain a coating film having a film thickness of 100 nm, and then a rubbing treatment was performed. The rubbing treatment was performed using a rayon cloth manufactured by Yoshikawa Kako: YA-20R under the conditions of a roll diameter of 120 mm, a rotation speed of 1000 rpm, a moving speed of 50 mm / sec, and a pushing amount of 0.4 mm. However, the above-mentioned rotation speed of the film coated with AL1 or AL2 was set to 300 rpm. After the rubbing treatment, ultrasonic irradiation was performed in pure water for 1 minute, and the mixture was dried at 80 ° C. for 10 minutes.
(液晶セルの作製)
上記液晶配向膜付きの2種類の基板(第一基板及び第二基板)を用い、液晶注入口を残して周囲をシールし、セルギャップが約4μmの空セルを作製した。この際、第一基板がラビング処理していない場合は、第一基板の櫛歯電極の向きと第二基板のラビング方向が平行になるように組み合わせ、第一基板をラビング処理した場合は、第一基板と第二基板のラビング方向が逆平行になるように組み合わせた。
この空セルに、液晶(メルク社製MLC−3019にHMAを10wt%添加したもの)を常温で真空注入した後、注入口を封止して液晶セルとした。得られた液晶セルは、IPSモード液晶表示素子を構成する。その後、得られた液晶セルを120℃で20分加熱処理を行った。
UV処理ありでは、高圧水銀ランプを用い波長313nmのバンドパスフィルター介して露光量が1000mJ/cm2となるよう液晶セルに紫外線を照射した。(Making a liquid crystal cell)
Using the above two types of substrates with a liquid crystal alignment film (first substrate and second substrate), the periphery was sealed leaving the liquid crystal injection port, and an empty cell having a cell gap of about 4 μm was prepared. At this time, if the first substrate is not rubbed, the direction of the comb tooth electrode of the first substrate is combined so that the rubbing direction of the second substrate is parallel, and if the first substrate is rubbed, the first substrate is rubbed. The rubbing directions of the first substrate and the second substrate were combined so as to be antiparallel.
A liquid crystal (MLC-3019 manufactured by Merck & Co., Inc. with 10 wt% HMA added) was vacuum-injected into the empty cell at room temperature, and then the injection port was sealed to form a liquid crystal cell. The obtained liquid crystal cell constitutes an IPS mode liquid crystal display element. Then, the obtained liquid crystal cell was heat-treated at 120 ° C. for 20 minutes.
With UV treatment, the liquid crystal cell was irradiated with ultraviolet rays using a high-pressure mercury lamp through a bandpass filter having a wavelength of 313 nm so that the exposure amount was 1000 mJ / cm 2 .
<液晶配向性の評価>
クロスニコルにセットした偏光板を用いて液晶セルの配向性を確認した。欠陥無く配向しているものは○、軽微な配向欠陥のあるものは△、配向していないものは×とした。<Evaluation of liquid crystal orientation>
The orientation of the liquid crystal cell was confirmed using a polarizing plate set on Cross Nicol. Those that were oriented without defects were marked with ◯, those with minor orientation defects were marked with Δ, and those without orientation were marked with x.
<V−Tカーブの測定と駆動閾値電圧、輝度最大電圧評価>
光軸が合うように白色LEDバックライトと輝度計をセットし、その間に、輝度が最も小さくなるように偏光板を取り付けた液晶セル(液晶表示素子)をセットし、1V間隔で8Vまで電圧を印加し、電圧における輝度を測定することでV−Tカーブの測定を行った。得られたV−Tカーブから駆動閾値電圧と輝度が最大になる電圧の値を見積もった。<Measurement of VT curve and evaluation of drive threshold voltage and maximum luminance voltage>
A white LED backlight and a luminance meter are set so that the optical axes are aligned, and a liquid crystal cell (liquid crystal display element) with a polarizing plate is set between them so that the brightness is minimized, and the voltage is applied to 8V at 1V intervals. The VT curve was measured by applying the voltage and measuring the brightness at the voltage. From the obtained VT curve, the values of the drive threshold voltage and the voltage that maximizes the brightness were estimated.
<液晶表示の応答速度の評価>
上記V−Tカーブの測定で使用した装置を用い、輝度計をオシロスコープに接続し、最大輝度になる電圧を印加した際の応答速度(Ton)および電圧を0にした際の応答速度(Toff)を測定した。<Evaluation of response speed of liquid crystal display>
Using the device used in the above VT curve measurement, the luminance meter was connected to the oscilloscope, and the response speed (Ton) when the voltage that maximized the brightness was applied and the response speed (Toff) when the voltage was set to 0. Was measured.
裏面ITO基板(第二基板)側にラビング処理した水平配向膜を使用したCell−1〜Cell−20の比較において、IPS基板(第一基板)側にラジカル発生膜を使用し且つUV処理したCell−11、Cell−12、Cell−16及びCell−17は、液晶の配向性が良好であり且つ駆動閾値電圧や輝度最大電圧が低下していることが確認された。また、ラジカル発生膜をラビング処理していないCell−11及びCell−12ではToffの値が増大しているのに対して、ラジカル発生膜をラビング処理したCell−16及びCell−17ではこのToff値の増大が大きく改善していることが確認された。 In the comparison of Cell-1 to Cell-20 using the horizontal alignment film rubbing on the back surface ITO substrate (second substrate) side, the cell using the radical generating film on the IPS substrate (first substrate) side and UV-treated Cell It was confirmed that in -11, Cell-12, Cell-16, and Cell-17, the orientation of the liquid crystal was good, and the drive threshold voltage and the maximum luminance voltage were lowered. Further, the Toff value is increased in Cell-11 and Cell-12 in which the radical generation film is not rubbed, whereas this Toff value is increased in Cell-16 and Cell-17 in which the radical generation film is rubbed. It was confirmed that the increase in radicals was greatly improved.
上記に加え補足的な実験として、AL1を裏面ITO基板(第二基板)とIPS基板(第一基板)両方に用い且つ第一基板、第二基板ともにラビング処理していない液晶セルを作成した。この液晶セルは、UV照射前において液晶の注入時の流動方向に沿った配向欠陥および輝点(流動配向)が観察されたが、UV照射後には流動配向が完全に消失し、液晶由来のドメイン(シュリーレン)が確認された。このことからラジカル発生膜と重合性化合物が入った液晶を併用した場合、UVを照射することで該ラジカル発生膜は液晶配向規制力を失い、該ラジカル発生膜上にゼロ面アンカリング膜が形成されることが示唆された。 As a supplementary experiment in addition to the above, a liquid crystal cell was prepared in which AL1 was used for both the back surface ITO substrate (second substrate) and the IPS substrate (first substrate), and neither the first substrate nor the second substrate was rubbed. In this liquid crystal cell, orientation defects and bright spots (flow orientation) along the flow direction at the time of liquid crystal injection were observed before UV irradiation, but the flow orientation completely disappeared after UV irradiation, and the domain derived from the liquid crystal. (Srilen) was confirmed. For this reason, when a radical generating film and a liquid crystal containing a polymerizable compound are used in combination, the radical generating film loses the liquid crystal orientation regulating force by irradiating with UV, and a zero-plane anchoring film is formed on the radical generating film. It was suggested that it would be done.
また、液晶セルCell−21〜Cell−24の比較においては、UV照射していないCell−21及びCell−23はラビング方向への一軸配向性を示したが、UV照射を行ったCell−22及びCell−24は無配向状態に変わり液晶のドメイン(シュリーレン)が発生した。このことからラジカル発生膜をラビングした場合であっても、UVを照射することで該ラジカル発生膜上にゼロ面アンカリング膜が形成されることが示唆された。 Further, in the comparison of the liquid crystal cells Cell-21 to Cell-24, Cell-21 and Cell-23 not irradiated with UV showed uniaxial orientation in the rubbing direction, but Cell-22 and Cell-24 subjected to UV irradiation. Cell-24 changed to an unoriented state, and a liquid crystal domain (schlieren) was generated. This suggests that even when the radical generation film is rubbed, a zero-plane anchoring film is formed on the radical generation film by irradiating with UV.
ただし、Cell−22及びCell−24をクロスニコル下で回転させながら観察すると、僅かながらも明暗の変化が生じたことから、このゼロ面アンカリング膜は配向規制力が全くない状態ではないが、その規制力は液晶同士の分子間力よりも弱く、この規制力のみでは液晶分子をいずれの方向にも一軸配向させていないことが示唆される。このことから、Cell−16及びCell−17においてToffの値が大きく改善したのは、上記の弱い規制力が作用したことが要因と考えられる。 However, when Cell-22 and Cell-24 were observed while rotating under the cross Nicol, a slight change in brightness occurred. Therefore, this zero-plane anchoring film is not in a state where there is no orientation regulating force. Its regulatory force is weaker than the intermolecular force between liquid crystals, suggesting that this regulatory force alone does not uniaxially orient the liquid crystal molecules in either direction. From this, it is considered that the reason why the Toff value was greatly improved in Cell-16 and Cell-17 was that the above-mentioned weak regulatory force acted.
<液晶表示素子の作製>
上記で得たAL1〜AL3及び水平配向用の液晶配向剤であるSE−6414(日産化学株式会社製)を用い、表5に示す構成で液晶表示素子を作製した。<Manufacturing of liquid crystal display element>
Using AL1 to AL3 obtained above and SE-6414 (manufactured by Nissan Chemical Industries, Ltd.), which is a liquid crystal alignment agent for horizontal alignment, a liquid crystal display element was produced with the configuration shown in Table 5.
(第一基板)
第一基板(以後FFS基板ともいう)は、30mm×35mmの大きさで、厚さが0.7mmのガラス基板である。基板上には第1層目として対向電極を構成するIZO電極が全面に形成されている。第1層目のIZO電極の上には第2層目として、CVD法により成膜されたSiN(窒化珪素)膜が形成されている。第2層目のSiN膜の膜厚は500nmであり、層間絶縁膜として機能する。第2層目のSiN膜の上には、第3層目としてIZO膜をパターニングして形成された櫛歯状の画素電極が配置され、画素のサイズは、縦10mmで横約10mmである。このとき、第1層目の対向電極と第3層目の画素電極とは、第2層目のSiN膜の作用により電気的に絶縁されている。
第3層目の櫛歯状の電極形状において、電極の短手方向の幅は3μmであり、電極同士の間隔は6μmである。
AL1〜AL3又はSE−6414は、1.0μmのフィルターで濾過した後、上記FFS基板の電極形成面にスピンコート法にて塗布し、80℃のホットプレート上で1分間乾燥させた。次いで、AL1〜AL3は210℃で20分間、SE−6414は220℃で20分焼成し、焼成して、それぞれ膜厚100nmの塗膜とした。
ラビング処理「有り」では、ラビング方向が櫛歯電極の長手方向に対しに85°の角度で交差するようにラビングを行った。ラビングは吉川化工製のレーヨン布:YA−20Rを用い、ロール径120mm、回転数300rpm、移動速度50mm/sec、押し込み量0.4mmの条件にて行った。ただし、SE−6414を塗布した膜のみ上記の回転数を1000rpmにした。ラビング処理後は、純水中にて1分間超音波照射を行い、80℃で10分間乾燥した。(First board)
The first substrate (hereinafter, also referred to as FFS substrate) is a glass substrate having a size of 30 mm × 35 mm and a thickness of 0.7 mm. An IZO electrode forming a counter electrode is formed on the entire surface of the substrate as a first layer. A SiN (silicon nitride) film formed by a CVD method is formed as a second layer on the IZO electrode of the first layer. The thickness of the SiN film of the second layer is 500 nm, and it functions as an interlayer insulating film. On the SiN film of the second layer, a comb-teeth-shaped pixel electrode formed by patterning an IZO film as the third layer is arranged, and the size of the pixel is 10 mm in length and about 10 mm in width. At this time, the counter electrode of the first layer and the pixel electrode of the third layer are electrically insulated by the action of the SiN film of the second layer.
In the comb-shaped electrode shape of the third layer, the width of the electrodes in the lateral direction is 3 μm, and the distance between the electrodes is 6 μm.
AL1 to AL3 or SE-6414 were filtered through a 1.0 μm filter, then applied to the electrode forming surface of the FFS substrate by a spin coating method, and dried on a hot plate at 80 ° C. for 1 minute. Next, AL1 to AL3 were fired at 210 ° C. for 20 minutes, and SE-6414 was fired at 220 ° C. for 20 minutes and fired to obtain a coating film having a film thickness of 100 nm.
In the rubbing treatment “Yes”, rubbing was performed so that the rubbing directions intersected the longitudinal direction of the comb tooth electrode at an angle of 85 °. The rubbing was performed using a rayon cloth manufactured by Yoshikawa Kako: YA-20R under the conditions of a roll diameter of 120 mm, a rotation speed of 300 rpm, a moving speed of 50 mm / sec, and a pushing amount of 0.4 mm. However, the above rotation speed was set to 1000 rpm only for the film coated with SE-6414. After the rubbing treatment, ultrasonic irradiation was performed in pure water for 1 minute, and the mixture was dried at 80 ° C. for 10 minutes.
(第二基板)
第二基板(裏面ITO基板ともいう)は、30mm×35mmの大きさで、厚さが0.7mmの無アルカリガラス基板であり、裏面(セルの外側を向く面)にITO膜が成膜されている。また、表面(セルの内側を向く面)には高さ4μmの柱状のスペーサーが形成されている。
塗布する液晶配向剤はSE−6414を用い、1.0μmのフィルターで濾過した後、上記裏面ITO基板の表面にスピンコート法にて塗布し、80℃のホットプレート上で1分間乾燥させた。次いで、220℃で20分焼成し、それぞれ膜厚100nmの塗膜とした後、ラビング処理を行った。ラビング処理は、吉川化工製のレーヨン布:YA−20Rを用い、ロール径120mm、回転数1000rpm、移動速度50mm/sec、押し込み量0.4mmの条件にてラビングを行った。ラビング処理後は、純水中にて1分間超音波照射を行い、80℃で10分間乾燥した。(Second board)
The second substrate (also referred to as the back surface ITO substrate) is a non-alkali glass substrate having a size of 30 mm × 35 mm and a thickness of 0.7 mm, and an ITO film is formed on the back surface (the surface facing the outside of the cell). ing. Further, a columnar spacer having a height of 4 μm is formed on the surface (the surface facing the inside of the cell).
The liquid crystal alignment agent to be applied was SE-6414, filtered through a 1.0 μm filter, then applied to the surface of the back surface ITO substrate by a spin coating method, and dried on a hot plate at 80 ° C. for 1 minute. Then, it was fired at 220 ° C. for 20 minutes to form a coating film having a film thickness of 100 nm, and then a rubbing treatment was performed. The rubbing treatment was performed using a rayon cloth manufactured by Yoshikawa Kako: YA-20R under the conditions of a roll diameter of 120 mm, a rotation speed of 1000 rpm, a moving speed of 50 mm / sec, and a pushing amount of 0.4 mm. After the rubbing treatment, ultrasonic irradiation was performed in pure water for 1 minute, and the mixture was dried at 80 ° C. for 10 minutes.
(液晶セルの作製)
上記液晶配向膜付きの2種類の基板(第一基板及び第二基板)を用い、液晶注入口を残して周囲をシールし、セルギャップが約4μmの空セルを作製した。この際、第一基板がラビング処理の有無にかかわらず、第一基板の櫛歯電極の向きと第二基板のラビング方向が平行になるように組み合わせた。
この空セルに、液晶(メルク社製MLC−3019にHMAを10wt%添加したものおよびカイラルドーパントS−5011)を常温で真空注入した後、注入口を封止して液晶セルとした。得られた液晶セルは、FFSモード液晶表示素子を構成する。その後、得られた液晶セルを120℃で20分加熱処理を行った。
UV処理ありでは、高圧水銀ランプを用い波長300nmのハイパスフィルターを介して、365nmのエネルギー換算にて露光量が5000mJ/cm2となるよう液晶セルに紫外線を照射した。(Making a liquid crystal cell)
Using the above two types of substrates with a liquid crystal alignment film (first substrate and second substrate), the periphery was sealed leaving the liquid crystal injection port, and an empty cell having a cell gap of about 4 μm was prepared. At this time, the first substrate was combined so that the direction of the comb tooth electrode of the first substrate and the rubbing direction of the second substrate were parallel regardless of the presence or absence of the rubbing treatment.
A liquid crystal (MLC-3019 manufactured by Merck & Co., Inc. with 10 wt% of HMA added and chiral dopant S-5011) was vacuum-injected into this empty cell, and then the injection port was sealed to form a liquid crystal cell. The obtained liquid crystal cell constitutes an FFS mode liquid crystal display element. Then, the obtained liquid crystal cell was heat-treated at 120 ° C. for 20 minutes.
With UV treatment, the liquid crystal cell was irradiated with ultraviolet rays through a high-pass filter having a wavelength of 300 nm using a high-pressure mercury lamp so that the exposure amount was 5000 mJ / cm 2 in terms of energy at 365 nm.
<液晶配向性の評価>
クロスニコルにセットした偏光板を用いて液晶セルの配向性を確認した。欠陥無く配向しているものは○、軽微な配向欠陥のあるものは△、配向していないものは×とした。<Evaluation of liquid crystal orientation>
The orientation of the liquid crystal cell was confirmed using a polarizing plate set on Cross Nicol. Those that were oriented without defects were marked with ◯, those with minor orientation defects were marked with Δ, and those without orientation were marked with x.
<V−Tカーブの測定と駆動閾値電圧、輝度最小電圧評価>
光軸が合うように白色LEDバックライトと輝度計をセットし、その間に、輝度が最も大きくなるように偏光板を取り付けた液晶セル(液晶表示素子)をセットし、1V間隔で8Vまで電圧を印加し、電圧における輝度を測定することでV−Tカーブの測定を行った。得られたV−Tカーブから駆動閾値電圧と輝度が最小になる電圧の値を見積もった。<Measurement of VT curve and evaluation of drive threshold voltage and minimum brightness voltage>
A white LED backlight and a luminance meter are set so that the optical axes are aligned, and a liquid crystal cell (liquid crystal display element) with a polarizing plate is set between them so that the brightness is maximized, and the voltage is applied to 8V at 1V intervals. The VT curve was measured by applying the voltage and measuring the brightness at the voltage. From the obtained VT curve, the values of the drive threshold voltage and the voltage at which the brightness was minimized were estimated.
<液晶表示の応答速度の評価>
上記V−Tカーブの測定で使用した装置を用い、輝度計をオシロスコープに接続し、最小輝度になる電圧を印加した際の応答速度(Ton)および電圧を0にした際の応答速度(Toff)を測定した。<Evaluation of response speed of liquid crystal display>
Using the device used in the above VT curve measurement, the luminance meter was connected to the oscilloscope, and the response speed (Ton) when the voltage that became the minimum brightness was applied and the response speed (Toff) when the voltage was set to 0. Was measured.
FFS基板側をラビング処理しない場合、裏面ITO側をラビング処理していても水平配向は確認できず。酷い流動配向が確認された。一方でラビング処理を行った場合膜無しのものを除いてすべてツイスト配向を示した。 When the FFS substrate side is not rubbed, the horizontal orientation cannot be confirmed even if the back surface ITO side is rubbed. Severe flow orientation was confirmed. On the other hand, when the rubbing treatment was performed, all of them showed twist orientation except those without a film.
このツイスト配向したセルを駆動させた際、輝度最小電圧は10V以上となり、20V以上電圧を印可しても完全な黒表示にはならなかった。 When this twist-oriented cell was driven, the minimum luminance voltage was 10 V or more, and even if a voltage of 20 V or more was applied, a completely black display was not obtained.
FFS基板側をラビングしていないものに関しては液晶の配向は確認できなかったが、UVを照射するとツイスト配向性を示すサンプルが現れた(Cell−11’、Cell−12’)。一方でCell−13’〜Cell−15’においては配向性を示さず、無配向状態であった。このことからラジカル重合性を示す有機基を有する配向膜が液晶を配向させる状態を作り出していると考えられる。加えて駆動させた際に最低輝度になる電圧の大幅な低下が確認され、黒表示を示した。 The orientation of the liquid crystal could not be confirmed for those without rubbing on the FFS substrate side, but samples showing twist orientation appeared when irradiated with UV (Cell-11', Cell-12'). On the other hand, Cell-13'to Cell-15' showed no orientation and were in an unoriented state. From this, it is considered that the alignment film having an organic group exhibiting radical polymerization creates a state in which the liquid crystal is oriented. In addition, a significant decrease in the voltage that became the lowest brightness when driven was confirmed, and a black display was shown.
またラビング処理+UV照射したサンプルのうちCell−16’、Cell−17’においては駆動閾値電圧や輝度最小電圧が低下するだけでなく、Toffの値も大きく改善することが判った。一方でCell−18’〜Cell−20’においてはUV照射していないものと同様の結果となっており、変化が起こらないことが判った。このことからもラジカル重合性を有する有機基を含有する配向膜と重合性化合物を含有した液晶を用いてUV照射処理することでこのような特徴的な挙動を作り出すことができると考えられる。 It was also found that among the samples subjected to the rubbing treatment + UV irradiation, in Cell-16'and Cell-17', not only the drive threshold voltage and the minimum luminance voltage were lowered, but also the Toff value was greatly improved. On the other hand, in Cell-18'to Cell-20', the results were the same as those in which UV irradiation was not performed, and it was found that no change occurred. From this, it is considered that such a characteristic behavior can be produced by UV irradiation treatment using an alignment film containing an organic group having radical polymerization property and a liquid crystal containing a polymerizable compound.
補足的な実験として、液晶にカイラルドーパントを含まないものを用いた場合、UVAL−1及びAL−2を用いたセルにUVを施したセルはラビング処理の有無にかかわらず水平配向となり、ツイスト配向を用いた動作の検証はできなかった。 As a supplementary experiment, when a liquid crystal containing no chiral dopant was used, the cells in which UV was applied to the cells using UVAL-1 and AL-2 were horizontally oriented regardless of the presence or absence of rubbing treatment, and were twisted. It was not possible to verify the operation using.
本発明によれば、ゼロ面アンカリング膜を安価な原料から、工業的に、歩留まりよく作り出すことができる。また、本発明の方法で得られる液晶表示素子は、PSA型液晶ディスプレイやSC−PVA型液晶ディスプレイ等の垂直配向方式の液晶表示素子として有用である。 According to the present invention, a zero-plane anchoring film can be industrially produced from an inexpensive raw material with a high yield. Further, the liquid crystal display element obtained by the method of the present invention is useful as a vertically oriented liquid crystal display element such as a PSA type liquid crystal display or an SC-PVA type liquid crystal display.
Claims (22)
(式[X−1]〜[X−14]中、*は化合物分子の重合性不飽和結合以外の部分との結合部位を示し、S1、S2はそれぞれ独立して−O−、−NR−、−S−を表し、Rは水素原子又は炭素原子数1〜4のアルキル基を表し、R12は水素原子、ハロゲン原子、炭素数1〜10のアルキル基、炭素数1〜10のアルコキシ基を表し、R1,R2はそれぞれ独立して水素原子、ハロゲン原子、炭素数1〜4のアルキル基を表す)
(式[W]、[Y]、[Z]中、*は化合物分子の重合性不飽和結合以外の部分との結合部位を示し、Arは有機基及び/又はハロゲン原子を置換基として有しても良いフェニレン、ナフチレン、及びビフェニレンからなる群より選ばれる芳香族炭化水素基を示し、R9及びR10は、それぞれ独立に、炭素数1〜10のアルキル基又は炭素数1〜10のアルコキシ基を表し、R9とR10がアルキル基の場合、末端で互いに結合し環構造を形成していても良い。Qは下記のいずれかの構造を表す。
(式中、R11は−CH2−、−NR−、−O−、又は−S−を表し、Rは水素原子又は炭素原子数1〜4のアルキル基を表し、*は化合物分子のQ以外の部分との結合部位を示す。)
R12は水素原子、ハロゲン原子、炭素数1〜10のアルキル基又は炭素数1〜10のアルコキシ基を表す。)Claims 4, 6 and 7 wherein the organic group that induces radical polymerization is an organic group represented by the following structures [X-1] to [X-14], [W], [Y] and [Z]. The method according to any one item.
(In the formulas [X-1] to [X-14], * indicates a bonding site with a portion other than the polymerizable unsaturated bond of the compound molecule, and S 1 and S 2 are independently -O- and-, respectively. Represents NR- and -S-, R represents a hydrogen atom or an alkyl group having 1 to 4 carbon atoms, and R 12 represents a hydrogen atom, a halogen atom, an alkyl group having 1 to 10 carbon atoms, and 1 to 10 carbon atoms. Represents an alkoxy group, and R 1 and R 2 independently represent a hydrogen atom, a halogen atom, and an alkyl group having 1 to 4 carbon atoms).
(In the formulas [W], [Y], and [Z], * indicates a bond site with a portion other than the polymerizable unsaturated bond of the compound molecule, and Ar has an organic group and / or a halogen atom as a substituent. It represents an aromatic hydrocarbon group selected from the group consisting of phenylene, naphthylene, and biphenylene, wherein R 9 and R 10 are independently alkyl groups having 1 to 10 carbon atoms or alkoxy groups having 1 to 10 carbon atoms. Representing a group, when R 9 and R 10 are alkyl groups, they may be bonded to each other at the ends to form a ring structure. Q represents any of the following structures.
(In the formula, R 11 represents -CH 2- , -NR-, -O-, or -S-, R represents a hydrogen atom or an alkyl group having 1 to 4 carbon atoms, and * represents Q of the compound molecule. Indicates the binding site with a part other than the above.)
R 12 represents a hydrogen atom, a halogen atom, an alkyl group having 1 to 10 carbon atoms, or an alkoxy group having 1 to 10 carbon atoms. )
(式(6)中、R6は単結合、−CH2−、−O−、−COO−、−OCO−、−NHCO−、−CONH−、−NH−、−CH2O−、−N(CH3)−、−CON(CH3)−、又は−N(CH3)CO−を表し、
R7は単結合、又は非置換もしくはフッ素原子によって置換されている炭素数1〜20のアルキレン基を表し、当該アルキレン基の任意の−CH2−又は−CF2−の1以上は、それぞれ独立に−CH=CH−、二価の炭素環、および二価の複素環から選ばれる基で置き換えられていてもよく、さらに、次に挙げるいずれかの基、すなわち、−O−、−COO−、−OCO−、−NHCO−、−CONH−、又は−NH−が互いに隣り合わないことを条件に、これらの基で置き換えられていてもよい;
R8は、下記式:
から選択されるラジカル重合反応性基を表す。
(式[X−1]〜[X−14]中、*は化合物分子のラジカル重合反応性基以外の部分との結合部位を示し、S1、S2はそれぞれ独立して−O−、−NR−、−S−を表し、Rは水素原子又は炭素原子数1〜4のアルキル基を表し、R12は水素原子、ハロゲン原子、炭素数1〜10のアルキル基、炭素数1〜10のアルコキシ基を表し、R1,R2はそれぞれ独立して水素原子、ハロゲン原子、炭素数1〜4のアルキル基を表す))
(式(7)中、T1及びT2は、それぞれ独立に、単結合、−O−、−S−、−COO−、−OCO−、−NHCO−、−CONH−、−NH−、−CH2O−、−N(CH3)−、−CON(CH3)−、又は−N(CH3)CO−であり、
Sは単結合、又は非置換もしくはフッ素原子によって置換されている炭素数1〜20のアルキレン基を表し、当該アルキレン基の任意の−CH2−又は−CF2−の1以上は、それぞれ独立に−CH=CH−、二価の炭素環、および二価の複素環から選ばれる基で置き換えられていてもよく、さらに、次に挙げるいずれかの基、すなわち、−O−、−COO−、−OCO−、−NHCO−、−CONH−、又は−NH−が互いに隣り合わないことを条件に、これらの基で置き換えられていてもよく、
Jは下記式で表される有機基であり、
(式[W]、[Y]、[Z]中、*はT2との結合箇所を表し、Arは有機基及び/又はハロゲン原子を置換基として有しても良いフェニレン、ナフチレン、及びビフェニレンからなる群より選ばれる芳香族炭化水素基を示し、R9及びR10は、それぞれ独立に、炭素数1〜10のアルキル基又は炭素数1〜10のアルコキシ基を表し、Qは下記のいずれかの構造を表す。
(式中、R11は−CH2−、−NR−、−O−、又は−S−を表し、Rは水素原子又は炭素原子数1〜4のアルキル基を表し、*は化合物分子のQ以外の部分との結合部位を示す。)
R12は水素原子、ハロゲン原子、炭素数1〜10のアルキル基又は炭素数1〜10のアルコキシ基を表す。))The method according to claim 7, wherein the diamine containing an organic group that induces radical polymerization is a diamine having a structure represented by the following general formula (6) or the following general formula (7).
(In formula (6), R 6 is a single bond, -CH 2- , -O-, -COO-, -OCO-, -NHCO-, -CONH-, -NH-, -CH 2 O-, -N. (CH 3) -, - CON (CH 3) -, or -N (CH 3) CO- represents,
R 7 represents an alkylene group having 1 to 20 carbon atoms which is single-bonded, or unsubstituted or substituted with a fluorine atom, and one or more of any -CH 2- or -CF 2- of the alkylene group is independent of each other. May be replaced with a group selected from -CH = CH-, a divalent carbon ring, and a divalent heterocycle, and any of the following groups, namely -O-, -COO- , -OCO-, -NHCO-, -CONH-, or -NH- may be replaced by these groups, provided they are not adjacent to each other;
R 8 is represented by the following formula:
Represents a radical polymerization reactive group selected from.
(In formulas [X-1] to [X-14], * indicates a bonding site with a portion of the compound molecule other than the radical polymerization reactive group, and S 1 and S 2 are independently -O- and-, respectively. Represents NR- and -S-, R represents a hydrogen atom or an alkyl group having 1 to 4 carbon atoms, and R 12 represents a hydrogen atom, a halogen atom, an alkyl group having 1 to 10 carbon atoms, and 1 to 10 carbon atoms. Represents an alkoxy group, and R 1 and R 2 independently represent a hydrogen atom, a halogen atom, and an alkyl group having 1 to 4 carbon atoms))
(In formula (7), T 1 and T 2 are independently single-bonded, -O-, -S-, -COO-, -OCO-, -NHCO-, -CONH-, -NH-,-. CH 2 O-, -N (CH 3 )-, -CON (CH 3 )-, or -N (CH 3 ) CO-
S represents an alkylene group having 1 to 20 carbon atoms which is single-bonded, or unsubstituted or substituted with a fluorine atom, and one or more of any -CH 2- or -CF 2- of the alkylene group is independent of each other. It may be replaced with a group selected from −CH = CH−, a divalent carbocycle, and a divalent heterocyclic ring, and any of the following groups, namely −O−, −COO−,. -OCO-, -NHCO-, -CONH-, or -NH- may be replaced by these groups provided they are not adjacent to each other.
J is an organic group represented by the following formula.
(In the formulas [W], [Y], and [Z], * represents a bond with T 2, and Ar is phenylene, naphthylene, and biphenylene which may have an organic group and / or a halogen atom as a substituent. Indicates an aromatic hydrocarbon group selected from the group consisting of, R 9 and R 10 each independently represent an alkyl group having 1 to 10 carbon atoms or an alkoxy group having 1 to 10 carbon atoms, and Q is any of the following. Represents the structure.
(In the formula, R 11 represents -CH 2- , -NR-, -O-, or -S-, R represents a hydrogen atom or an alkyl group having 1 to 4 carbon atoms, and * represents Q of the compound molecule. Indicates the binding site with a part other than the above.)
R 12 represents a hydrogen atom, a halogen atom, an alkyl group having 1 to 10 carbon atoms, or an alkoxy group having 1 to 10 carbon atoms. )))
(式中、*は化合物分子の重合性不飽和結合以外の部分との結合部位を示す)The method according to claim 10, wherein the polymerizable unsaturated bond of the radically polymerizable compound is selected from the following structures.
(In the formula, * indicates the binding site of the compound molecule with a portion other than the polymerizable unsaturated bond)
第一基板上のラジカル発生膜が第二基板に対向するようにセルを作成するステップ、および、
第一基板と第二基板との間に、液晶、カイラルドーパント及びラジカル重合性化合物を含有する液晶組成物を充填するステップを含み、
請求項1〜12のいずれか一項に記載の方法を用いる液晶セルの製造方法。A step of preparing a first substrate having a radical generating film and a second substrate having a radical generating film may be prepared.
A step of creating a cell so that the radical generation film on the first substrate faces the second substrate, and
A step of filling a liquid crystal composition containing a liquid crystal, a chiral dopant and a radically polymerizable compound between the first substrate and the second substrate is included.
A method for manufacturing a liquid crystal cell using the method according to any one of claims 1 to 12.
前記ラジカル重合性化合物のうち少なくとも一種が、液晶と相溶性を有する、一分子中に一個の重合性不飽和結合を有する化合物であり、
重合性不飽和結合が以下の構造から選ばれる、液晶組成物。
(式中、*は化合物分子の重合性不飽和結合以外の部分との結合部位を示す)Contains liquid crystals, chiral dopants and radically polymerizable compounds
At least one of the radically polymerizable compounds is a compound having a polymerizable unsaturated bond in one molecule and having compatibility with a liquid crystal.
A liquid crystal composition in which a polymerizable unsaturated bond is selected from the following structures.
(In the formula, * indicates the binding site of the compound molecule with a portion other than the polymerizable unsaturated bond)
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KR102255082B1 (en) * | 2013-09-03 | 2021-05-21 | 닛산 가가쿠 가부시키가이샤 | Liquid crystal aligning agent, liquid crystal alignment film, and liquid crystal display element |
JP6516962B2 (en) * | 2013-12-26 | 2019-05-22 | エルジー ディスプレイ カンパニー リミテッド | Liquid crystal display device utilizing zero plane anchoring state and method of manufacturing the same |
CN107077024B (en) * | 2014-11-07 | 2020-11-17 | 日产化学工业株式会社 | Liquid crystal display element |
KR102425044B1 (en) * | 2014-11-12 | 2022-07-25 | 닛산 가가쿠 가부시키가이샤 | Liquid crystal alignment agent, liquid crystal alignment film, and liquid crystal display element |
JP6858486B2 (en) * | 2015-03-12 | 2021-04-14 | エルジー ディスプレイ カンパニー リミテッド | Liquid crystal display element and manufacturing method of liquid crystal display element |
KR20180047422A (en) * | 2016-10-31 | 2018-05-10 | 엘지디스플레이 주식회사 | Liquid Crystal Display Device And Method Of Fabricating The Same |
CN110785698B (en) * | 2017-06-30 | 2023-02-21 | 日产化学株式会社 | Method for manufacturing zero-plane anchoring film and liquid crystal display element |
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WO2008123235A1 (en) * | 2007-03-30 | 2008-10-16 | Dic Corporation | Polymer-stabilized liquid crystal composition, liquid crystal display, and process for production of liquid crystal display |
WO2016140288A1 (en) * | 2015-03-04 | 2016-09-09 | 日産化学工業株式会社 | Liquid crystal aligning agent, liquid crystal alignment film and liquid crystal display element |
JP2017010030A (en) * | 2015-06-23 | 2017-01-12 | エルジー ディスプレイ カンパニー リミテッド | Liquid crystal display element |
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