JPWO2019055354A5

JPWO2019055354A5 -

Info

Publication number: JPWO2019055354A5
Application number: JP2020515134A
Authority: JP
Publication date: 2022-12-21
Anticipated expiration: 2038-09-10

Description

ボンディングシート１１０の開口部１３０内に配置された耐エッチングコンポーネント１２５は、プラズマプロセスに対する特定の腐食耐性を有することが可能であり、この耐性は、ボンディング材１１５の腐食耐性と少なくとも同等である。耐エッチングコンポーネント１２５は、バルクセラミック材料及び／又は１つ以上の耐プラズマ材でコーティングされた要素を含んでよい。幾つかの実施形態では、耐エッチングコンポーネント１２５は、耐プラズマコーティング（例えば、酸化イットリウム（Ｙ_２Ｏ_３）、フッ化イットリウム（ＹＦ_３）、オキシフッ化イットリウム（ＹＯＦ））がコーティングされたポリエーテルエーテルケトン（ＰＥＥＫ）、ＦＦＫＭ、及びＰＥＥＫディスク等であってよい。コーティングされたＰＥＥＫディスクは、比較的低温（例えば、２５℃）での薄膜堆積プロセスにより形成可能である。幾つかの実施形態では、例えば、ボンディング材１１５がＦＦＫＭを含む場合には、耐エッチングコンポーネント１２５が省略されてよい。これは、プラズマプロセスに対するＦＦＫＭの耐性が十分なので耐エッチングコンポーネントの追加が不要な為である。そのような実施形態では、ＦＦＫＭを含み、熱伝導粒子が埋め込まれているボンディングシートが単独で、半導体デバイス同士をボンディングする為に使用されてよい。 The etch-resistant component 125 disposed within the opening 130 of the bonding sheet 110 can have a particular corrosion resistance to plasma processes, which is at least equal to the corrosion resistance of the bonding material 115 . Etch resistant component 125 may include bulk ceramic materials and/or elements coated with one or more plasma resistant materials. In some embodiments, the etch-resistant component 125 is a polyetherether coated with a plasma-resistant coating (e.g., yttrium oxide (Y2O3), yttrium fluoride ₍ _YF3 ) _, yttrium oxyfluoride (YOF)). Ketone (PEEK), FFKM, PEEK discs, and the like. Coated PEEK disks can be formed by thin film deposition processes at relatively low temperatures (eg, 25° C.). In some embodiments, etch resistant component 125 may be omitted, for example, if bonding material 115 includes FFKM. This is because FFKM is sufficiently resistant to plasma processes that no additional etch resistant components are required. In such embodiments, a bonding sheet comprising FFKM and having thermally conductive particles embedded therein may be used alone to bond semiconductor devices together.

Claims

A bonding sheet for use with semiconductor components,
a first surface configured to be attached to a first semiconductor component;
a second surface configured to be attached to a second semiconductor component;
An etch resistant material disposed in a first region of the bonding sheet,
ceramic material,
an element coated with at least one of yttrium oxide (Y2O3), yttrium fluoride ₍ _YF3 ) _, and yttrium oxyfluoride (YOF);
fluoroelastomers (FKM),
Alternatively, the etching resistant material containing a combination thereof,
a bonding material disposed on a second region of the bonding sheet, the bonding material comprising a silicon-based polymer;
a plurality of thermally conductive elements embedded in the bonding material of the second region, the plurality of thermally conductive elements comprising an organic filler configured to decompose into a gas when exposed to a plasma process; a heat-conducting element;
including
each first region is distinctly separated from each second region and is positioned proximate to each second region;
bonding sheet.

the bonding material includes at least one of polydimethylsiloxane (PDMS) and fluoroelastomer (FKM);
the etch-resistant material comprises polyetheretherketone (PEEK);
The bonding sheet according to claim 1.

The bonding sheet is
has a thickness of less than about 200 microns;
flatness over the length of the bonding sheet is less than about 20 microns;
elongation specification is less than about 20%;
The bonding sheet according to claim 1.

Furthermore,
a thermal conductivity of less than about 0.3 W/mK;
thermal uniformity such that the temperature difference across the surface of the bonding sheet is no more than about 2°C in a temperature range of about -60°C to about 180°C;
The bonding sheet according to claim 1.

2. The bonding sheet of claim 1, wherein the bonding material comprises polydimethylsiloxane (PDMS).

2. The bonding sheet of claim 1, wherein said bonding material comprises fluoroelastomer (FKM).

The first region corresponds to openings filled with the etching resistant material in the bonding sheet, at least some of the openings have different diameters, and at least some of the openings 2. The bonding sheet of claim 1 positioned to align with features overlying the first semiconductor component, the second semiconductor component, or both.

2. The bonding sheet of claim 1, wherein said thermally conductive element comprises particles suspended in said bonding material, said particles comprising at least one of silica particles and boron nitride (BN).

9. The bonding sheet of Claim 8, wherein the thermally conductive element comprises at least about 20% of the bonding material of the bonding sheet.

2. The bonding sheet of claim 1, wherein said element of said etch resistant material comprises polyetheretherketone (PEEK).

11. The etch-resistant material of claim 10, wherein the etch-resistant material comprises a plasma-resistant coating including at least one of yttrium oxide (Y2O3), yttrium fluoride ₍ _YF3 ) _, and yttrium oxyfluoride (YOF). bonding sheet.

Each of the first and second regions extend through the entirety of the bonding sheet from the first surface to the second surface, and the outermost surface of the bonding sheet comprises the etch resistant material. 2. The bonding sheet according to claim 1, wherein the bonding material and the bonding material alternate.

2. The bonding sheet of claim 1, further comprising one or more adhesion promoters.

A device for affixing one or more semiconductor components to each other, comprising:
A bonding sheet,
a first surface configured to be attached to a first semiconductor component;
a second side opposite the first side and configured to be attached to a second semiconductor component;
a bonding material covering substantially the entire thickness of the bonding sheet;
an etch resistant material disposed within an opening extending through the bonding sheet from the first surface to the second surface,
Polyetheretherketone (PEEK),
elements coated with yttrium oxide (Y2O3), yttrium fluoride ₍ _YF3 ) _, and yttrium oxyfluoride (YOF);
Alternatively, the etching resistant material containing perfluoroelastomer (FFKM),
a plurality of thermally conductive elements embedded in the bonding material, the thermally conductive elements configured to decompose into a gas when exposed to a plasma process;
A device comprising the bonding sheet comprising:

The etch-resistant material is disposed on a first region of the bonding sheet,
The bonding material is arranged in a second region of the bonding sheet, which is different from the first region,
15. Device according to claim 14.

the bonding material includes at least one of polydimethylsiloxane (PDMS) and fluoroelastomer (FKM);
the etch-resistant material comprises polyetheretherketone (PEEK);
the thermally conductive element comprises an organic filler;
15. Device according to claim 14.

15. The device of claim 14, wherein said bonding material comprises perfluoroelastomer (FFKM).

has a thickness of less than about 200 microns;
a thermal conductivity of less than about 0.3 W/mK;
flatness over the length of the bonding sheet is less than about 20 microns;
elongation specification is less than about 20%;
15. Device according to claim 14.

A method for manufacturing a bonding sheet,
forming a plurality of openings in a bonding sheet including bonding material, said openings extending at least partially through said bonding sheet, said bonding material having a plurality of heat conducting elements therein. the forming step comprising
filling the openings of the bonding sheet with an etch-resistant material, wherein the etch-resistant material includes at least one of polyetheretherketone (PEEK) and perfluoroelastomer (FFKM);
method including.