KR100804170B1 - Waferblock - Google Patents

Abstract

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a wafer block, and more particularly to a wafer block including a wafer support portion on which a wafer is seated thereon, and a heater for heating the wafer, wherein the wafer support portion includes an opposite surface facing the wafer; It is formed to protrude upward from the opposite surface and the upper surface includes a plurality of projections in contact with the lower surface of the wafer, and the contact area between the wafer and the medium that transfers heat to the wafer from the center of the wafer toward the edge is greatly increased The present invention relates to a wafer block having a structure capable of heating a wafer while thermally balancing the entire surface of the wafer.

Description

Wafer Block {Waferblock}

1 is a side cross-sectional view of a conventional wafer block.

2 is a side sectional view of a wafer block according to a first embodiment of the present invention;

3 is a view of the wafer support plate shown in FIG. 2 seen from above;

4 is a schematic view showing a heat transfer process from a wafer support plate to a wafer shown in FIG.

5 is a side cross-sectional view of a wafer block according to a second embodiment of the present invention.

6 is a side cross-sectional view of a wafer block according to a third embodiment of the present invention.

FIG. 7 is a view of the wafer support plate shown in FIG. 6 seen from above; FIG.

FIG. 8 is a view schematically showing a heat transfer process from a wafer support plate shown in FIG. 6 to a wafer; FIG.

9 is a side cross-sectional view of a wafer block according to a fourth embodiment of the present invention.

10 is a view showing another embodiment of the projections shown in FIGS. 2, 5, 6 and 9;

<Description of the symbols for the main parts of the drawings>

100: wafer support 101: center axis

110, 150: wafer support plate 111, 131: wafer guide portion

112, 152: protrusion 114, 154: facing surface

120: shaft 130, 160: susceptor

140, 170: susceptor support plate 210: heater

w: wafer

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a wafer block. Specifically, the wafer can be heated while maintaining thermal balance over the entire surface of the wafer by increasing the contact area between the wafer and the medium that transfers heat to the wafer from the center portion of the wafer to the edge portion. The present invention relates to a wafer block.

Wafer block refers to a member on which a wafer is placed in a thin film deposition reaction container for depositing a thin film on a wafer in a semiconductor manufacturing process. The wafer block not only supports the seated wafer but also has a predetermined temperature required to deposit the thin film. It also serves to heat the wafer.

An example of such a wafer block is shown in FIG. As shown in FIG. 1, a conventional wafer block is generally installed in a thin film deposition reaction vessel 30. The wafer support 10 on which the wafer w is seated and the wafer w are heated. It is provided with a heater 20 for.

The wafer support part 10 includes a wafer support plate 11 and a shaft 15. The wafer support plate 11 is made of a material having excellent heat resistance and thermal conductivity such as Inconel and aluminum nitride, and the wafer support surface 12 on which the wafer w is seated is flat on the top surface of the wafer support plate 11. Formed. In addition, a heater 20 for heating the wafer w to a constant temperature and a temperature for heating the wafer w are measured below the wafer support surface 12 when the thin film is deposited on the wafer w. A thermocouple (not shown) for the purpose is built.

In the wafer block having the above structure, when a voltage is applied to the heater 20 in the process of depositing a thin film on the wafer, the heat generated from the heater 20 is thermally conducted through the wafer support plate 11 so that the wafer support surface ( The wafer w deposited on 12) is heated as a whole.

However, there is a difference in the amount of heat radiation emitted into the thin film deposition reaction vessel 30 depending on the portion of the wafer support plate 11. That is, the amount of heat released from the edge of the wafer support plate 11 to the inside of the thin film deposition reaction vessel 30 includes not only the amount of heat released by the heat conduction phenomenon from the wafer support plate 11 to the air layer, but also the reaction gas. In the process of being discharged to the exhaust port 32, the amount of heat dissipation due to the tropical flow phenomenon caused by the flow of the reaction gas near the edge of the wafer support plate 11 is added. On the other hand, since the flow of the reaction gas is weak in the center portion of the wafer support plate 11, the heat radiation amount Hc emitted from the center portion of the wafer support plate 11 into the reaction vessel 30 for thin film deposition is the flow of the reaction gas. There is almost no heat dissipation due to the tropical flow phenomenon, and the heat dissipation amount due to the heat conduction phenomenon is the majority. Therefore, the heat dissipation amount Hc emitted from the center of the wafer support plate 11 into the thin film deposition reaction vessel 30 is discharged from the edge of the wafer support plate 11 into the thin film deposition reaction vessel 30. It becomes less than heat radiation amount Ho. As described above, since the center portion of the wafer support plate 11 is not radiated relatively to the edge portion during heating of the wafer w, the phenomenon occurs in which the center portion of the wafer w is higher in temperature than the edge portion of the wafer.

Due to the difference in the heat dissipation amount of the center portion and the edge portion of the wafer support plate 11, the temperature of the center portion and the edge portion of the wafer cannot be maintained uniformly when the wafer w is heated, and thus the thickness of the thin film deposited on the wafer. It is difficult to keep the constant at both the center and the edge of the wafer.

In addition, since the lower surface of the wafer w contacts the entire surface of the wafer support surface 12, a vacuum is formed between the lower surface of the wafer and the wafer support surface when the wafer is seated on the wafer support surface 12. The phenomenon in which the wafer w adheres to the wafer support surface 12 occurs, which causes shock to be applied to the wafer in the process of unloading the wafer w after the thin film deposition process is completed.

The present invention provides a wafer block having an improved structure for heating a wafer while maintaining a thermal balance over the entire surface of the wafer by increasing the contact area between the wafer and the media transferring heat to the wafer from the center of the wafer to the edge portion. For the purpose of

Another object of the present invention is to provide a wafer block having an improved structure such that a vacuum state is not formed between the wafer and the surface supporting the wafer.

According to an aspect of the present invention, there is provided a wafer block including a wafer support portion on which a wafer is seated, and a heater for heating the wafer, wherein the wafer support portion faces an opposite surface facing the wafer and protrudes upward from the opposite surface. A wafer block including a plurality of protrusions having an upper end thereof in contact with a lower surface of the wafer, wherein the protrusions are arranged such that a gap between two adjacent protrusions becomes narrower from the center of the wafer support to the radially outer side thereof. It is about.

The present invention also provides a wafer block including a wafer support portion on which a wafer is seated thereon, and a heater for heating the wafer, wherein the wafer support portion is opposite to the opposite surface facing the wafer and upwards from the opposite surface. The protrusion has a plurality of protrusions, the top surface of which is in contact with the bottom surface of the wafer, wherein the area of the top surface of one of the protrusions is located in the radially outer side of the wafer support than the protrusions. It is related to a wafer block smaller than the top surface area of.

In the wafer block according to the present invention, the wafer support portion includes a wafer support plate in which the heater is built-in, and the opposing surface and the plurality of protrusions are formed on an upper surface thereof.

In the wafer block according to the present invention, the wafer support part includes a susceptor having the opposing surface and the plurality of protrusions formed on an upper surface thereof, and a contact with the lower surface of the susceptor and having the heater built therein. It is provided with a acceptor support plate.

In the wafer block according to the present invention, the upper end of the protrusion and the wafer are in surface contact.

In the wafer block according to the present invention, the upper end of the protrusion and the wafer are in point contact.

Hereinafter, preferred embodiments of the wafer block according to the present invention will be described in detail with reference to the accompanying drawings.

2 is a side cross-sectional view of a wafer block according to a first embodiment of the present invention, and FIG. 3 is a view of the wafer support plate shown in FIG.

2 and 3, the wafer block of the present embodiment includes a wafer support part 100 and a heater 210.

The wafer support part 100 includes a wafer support plate 110 and a shaft 120. The wafer support plate 110 is made of a material having excellent heat resistance and thermal conductivity, such as Inconel, aluminum nitride, aluminum oxide, and the like, where the wafer w is seated on an upper surface thereof. The wafer support plate 110 is manufactured in a circular shape according to the shape of the wafer w, and a wafer guide portion 111 is formed at an edge to prevent the wafer from being separated when the wafer is seated. The shaft 120 is provided below the wafer support plate 110 to support the wafer support plate 110. The wafer support plate 110 and the shaft 120 include a heater 210 and a thermocouple (not shown) for heating the wafer to a predetermined temperature when the thin film is deposited on the wafer.

The heater 210 is for heating the wafer to a predetermined temperature when depositing a thin film on the wafer w, and is embedded in the wafer support plate 110. In this embodiment, a resistive heating element is used. . The wafer support plate 110 is provided with a thermocouple (not shown) for measuring the temperature of the wafer w to be heated.

On the other hand, unlike the conventional wafer block, the upper surface of the wafer support plate 110 is formed with an opposing surface 114 and a plurality of protrusions 112 facing the wafer.

The opposing surface 114 is formed as a flat surface that is stepped downward from the wafer guide portion 111 and faces the lower surface of the wafer w. The area of the opposing surface 114 also varies according to the size of the wafer w (6 inches, 8 inches, 12 inches, etc.) to be seated. The edge portion of the wafer w is not caught by the wafer guide portion 111. The area of the opposing face 114 is circular with a somewhat larger diameter than the wafer w so that the opposing faces 114 can face in parallel.

The plurality of protrusions 112 are formed to protrude upward from the opposing surface 114 and are manufactured in the shape of a cylinder. The upper ends of the plurality of protrusions 112 are formed in a flat surface to allow the wafer w to be seated so that the bottom surface of the wafer and the plurality of protrusions 112 may be in surface contact. The amount of protrusion of each protrusion 112 from the opposite surface 114 is equal in order to contact the protrusions 112 over the entire surface of the wafer w. Since the plurality of protrusions 112 are very small in size, it is preferable to mold the plurality of protrusions 112 by etching.

The plurality of protrusions 112 are disposed at a higher density toward the radially outer side from the center of the wafer support plate 110. For example, the spacing between two adjacent protrusions disposed close to the center axis line 101 of the wafer support plate 110 is wider than the spacing between two adjacent protrusions disposed far from the center axis line 101. Specifically, the distance between two adjacent protrusions disposed closest to the central axis 101 may be defined as the first interval L1 and the distance between two adjacent protrusions disposed furthest outward in the radial direction from the central axis 101 may be defined as seventh. The interval L7, the interval between two adjacent protrusions 112 positioned between the first interval L1 and the seventh interval L7, respectively, the second interval L2, the third interval L3,... In the sixth interval L6, the first interval L1 is the widest, the seventh interval L7 is the narrowest, and the intervals L2, L3, L4, L5, and L6 therebetween. ) Becomes narrower toward the radially outward from the central axis 101. As such, the diameters of the protrusions contacting the wafer w from the center portion of the wafer w toward the edge are kept constant while the gap between the two adjacent protrusions is narrowly arranged.

Hereinafter, in the wafer block of the present embodiment configured as described above, the heat transfer process from the wafer support plate 110 to the wafer w will be schematically described with reference to FIG. 4.

First, in FIG. 4, H1 moves from the heater 210 to the center portion of the wafer w through the protrusions 112 formed at the center portion of the wafer support plate 110 and the air layer formed between the protrusions 112. The heat transfer amount (hereinafter, referred to as “first heat transfer amount”), H2 is a heater through the protrusions 112 formed on the edge of the wafer support plate 110 and the air layer formed between the protrusions 112. The amount of heat conduction transferred from 210 to the edge of the wafer w (hereinafter referred to as "second heat conduction amount").

In general, the thermal conductivity can be defined by a relation called Fourier law, which is as follows.

Q = k x A x ΔT / ℓ

Where Q is the thermal conductivity, k is the thermal conductivity, A is the contact area, ΔT is the temperature difference of the mediator, and l is the length of the mediator. The thermal conductivity is proportional to the value of the thermal conductivity having a different value depending on the type of media to which heat is transferred, and to the area in contact with the media. For example, a metal such as copper has a larger thermal conductivity than a gas such as air, so that, under the same conditions, the area in contact with the metal is greater than the thermal conductivity in the gas, even if thermal conductivity is achieved through the same medium. The larger the value, the larger the thermal conductivity than the smaller the area.

Looking at the heat transfer mechanism in the wafer block of this embodiment, the thermal conductivity coefficient of the intermediate material such as Inconel and aluminum nitride, which are the material of the wafer support plate 110, is larger than the thermal conductivity coefficient of the air layer, and the center portion of the wafer w The spacing between two adjacent protrusions 112 located at (eg, L2) is wider than the spacing between two adjacent protrusions 112 located at the edge of the wafer w (eg, L6), so that at the edge of the wafer The area where the wafer w and the protrusions 112 contact each other is larger than the area where the wafer w and the protrusions 112 contact at the center of the wafer. Therefore, at the edge of the wafer, the contact area between the protrusions 112 (the same material as the wafer support plate 110) and the wafer w having a thermal conductivity larger than that of the air layer is larger than that at the center of the wafer. The second thermal conductivity H2 transferred from the heater 210 to the edge portion of the wafer w is greater than the first thermal conductivity H1 transferred from the heater 210 to the center portion of the wafer w.

By the same principle, the heat transfer amount transferred from the heater 210 between the center portion and the edge portion of the wafer w is less than the second heat transfer amount H2 transferred from the heater 210 to the edge portion of the wafer w. More than the first thermal conductivity H1 transmitted from 210 to the center of the wafer w.

In conclusion, since the contact area between the wafer w and the protrusions 112 increases radially outward from the central axis 101, the amount of heat conduction transferred from the heater 210 to the wafer w also increases. .

In the wafer block according to the present embodiment configured as described above, the heat radiation amount Hc emitted from the center of the wafer support plate 110 to the inside of the thin film deposition reaction container is for thin film deposition from the edge of the wafer support plate 110. Although less than the heat radiation amount Ho released to the inside of the reaction vessel, it is transferred from the heater 210 to the center of the wafer by the opposing surface 114 and the plurality of protrusions 112 formed on the upper surface of the wafer support plate 110. The thermal conductivity is less than the thermal conductivity transferred from the heater 210 to the edge of the wafer, and it is possible to heat the wafer w while maintaining the thermal balance over the entire surface of the wafer at the time of heating. As a result, an effect of uniformly forming a thickness of the thin film deposited on the wafer w can be obtained.

In addition, in the wafer block according to the present embodiment configured as described above, since the plurality of protrusions 112 are formed to protrude upward from the opposing surface 114, the surface on which the wafer w is placed is formed flat. Unlike the conventional wafer block which is present, it is possible to prevent a vacuum from being formed between the lower surface of the wafer and the plurality of protrusions 112 when the wafer w is seated. Therefore, it is possible to obtain an effect of preventing an impact on the wafer in the process of unloading the wafer w after the thin film deposition process is completed.

5 is a side cross-sectional view of a wafer block according to a second embodiment of the present invention.

Referring to FIG. 5, in the wafer block according to the second embodiment of the present invention, the wafer support part 100 includes a susceptor 130, a susceptor support plate 140, and a shaft 120. In FIG. 5, members referred to by the same reference numerals as the members shown in FIGS. 2 to 4 have the same configuration and function, and detailed descriptions thereof will be omitted.

The susceptor 130 is made of a material having excellent heat resistance and thermal conductivity such as silicon carbide, aluminum nitride, alumina, etc., where the wafer w is seated on an upper surface thereof, and the material of the susceptor support plate 140 to be described later. It is common to be made of a material having more excellent thermal conductivity. Like the wafer support plate 110 of FIG. 2, the susceptor 130 is manufactured in a circular shape according to the shape of the wafer w, and a wafer guide is provided at the edge to prevent the wafer from being separated when the wafer w is seated. The part 131 is formed. In the wafer block of the present invention, the opposite surface 114 and the plurality of protrusions 112, which may be essential features, are formed on the upper surface of the susceptor 130.

The susceptor support plate 140 is disposed to be in contact with the bottom surface of the susceptor 130, and when the thin film is deposited on the wafer w, a heater 210 for heating the wafer w to a predetermined temperature. ) And a thermocouple (not shown) are built in. The susceptor 130 and the susceptor support plate 140 are detachably coupled. When the reaction gases are used in the thin film deposition reaction container, contamination occurs due to the remaining reaction gas and the reaction by-products generated after the reaction of the reaction gases. The susceptor 130 and the susceptor support plate 140 are detachably attached. By fabricating, cleaning of the wafer block can be facilitated.

The shaft 120 is provided below the susceptor support plate 140 to support the susceptor support plate 140.

On the other hand, in the wafer block of the present embodiment configured as described above, the heat transfer process from the susceptor 130 to the wafer w is also the principle of the heat transfer process from the wafer support plate 110 to the wafer w described with reference to FIG. Is the same as However, in the present embodiment, the wafer support unit 100 is configured to be separated into the susceptor 130 and the susceptor support plate 140, and the heater 210 for heating the wafer w is the susceptor support plate. Since it is embedded in the 140, the heat generated by the heater 210 is transferred to the wafer w via the susceptor support plate 140 and the susceptor 130.

Also in the wafer block according to the present embodiment configured as described above, the heat transfer amount is transferred from the wafer to the wafer over the entire surface of the wafer by the opposing surface 114 and the plurality of protrusions 112 on the susceptor 130. It is possible to heat while keeping the exit of the radiated heat discharged uniformly, and it is possible to prevent the vacuum from being formed between the lower surface of the wafer and the plurality of protrusions 112. Therefore, the same effects as in the first embodiment of the present invention can be obtained.

6 is a side cross-sectional view of a wafer block according to a third embodiment of the present invention, and FIG. 7 is a view showing the wafer support plate shown in FIG. 6 from above.

6 and 7, the wafer block of the present embodiment includes a wafer support part 100 and a heater 210, and the wafer support part 100 includes a wafer support plate 150 and a shaft 120. The upper surface of the wafer support plate 150 is the same as the first embodiment of the present invention in that the opposite surface 154 facing the wafer w and the plurality of protrusions 152 are formed.

However, the area of the top surface of one of the plurality of protrusions 152 is smaller than the top surface area of the other protrusion located radially outward from the center of the wafer support plate 150 than the protrusion. For example, the diameter of the projection located close to the central axis 101 of the wafer support plate 150 is smaller than the diameter of the projection located far from the central axis 101. Specifically, the diameter of the protrusion located closest to the central axis 101 is the first diameter D1, and the diameter of the protrusion located farthest outward in the radial direction from the central axis 101 is the seventh diameter D7. The diameter of the protrusion 112 located between the one diameter D1 and the seventh diameter D7 is defined as the second diameter D2, the third diameter D3,... , The sixth diameter (D6), the first diameter (D1) is the smallest, the seventh diameter (D7) is the largest, the diameter (D2) (D3) (D4) (D5) of the projection located between D6 becomes larger as it moves radially outward from the central axis 101. As such, the diameter of the protrusions contacting the wafer w is increased while the distance between two adjacent protrusions is kept constant from the center portion of the wafer w toward the edge.

Hereinafter, in the wafer block of the present embodiment configured as described above, the heat transfer process from the wafer support plate 150 to the wafer w will be schematically described with reference to FIG.

First, in FIG. 8, H3 moves from the heater 210 to the center portion of the wafer w through the protrusions 152 formed at the center portion of the wafer support plate 150 and the air layer formed between the protrusions 152. The heat transfer amount (hereinafter referred to as “third heat transfer amount”) transmitted, and H4 is a heater through the protrusions 152 formed at the edge of the wafer support plate 150 and the air layer formed between the protrusions 152. A heat conduction amount (hereinafter referred to as "fourth heat conduction amount") transferred from 210 to the edge of the wafer w.

Looking at the heat transfer mechanism in the wafer block of the present embodiment, the thermal conductivity coefficient of the medium such as Inconel and aluminum nitride, which are the material of the wafer support plate 150, is larger than the thermal conductivity coefficient of the air layer, and the protrusions located at the edges of the wafer. The diameter of 152 (eg, D6) is greater than the diameter of protrusion 152 (eg, D2) located at the center of the wafer, so that the wafer w and the protrusions 152 at the edge of the wafer The area in contact is larger than the area in which the wafer w and the protrusions 152 contact at the center of the wafer. Therefore, at the edge of the wafer, the contact area between the protrusions 152 (the same material as the wafer support plate 150) and the wafer w having a thermal conductivity larger than that of the air layer is larger than that at the center of the wafer. The fourth thermal conductivity H4 transmitted from the heater 210 to the edge portion of the wafer w is greater than the third thermal conductivity H3 transferred from the heater 210 to the center portion of the wafer w.

By the same principle, the heat transfer amount transferred from the heater 210 between the center portion and the edge portion of the wafer w is less than the fourth heat transfer amount H4 transferred from the heater 210 to the edge portion of the wafer, and the heater 210 More than the third amount of heat conduction H3 transmitted to the center portion of the wafer w.

In conclusion, since the contact area between the wafer w and the protrusions 152 increases from the central axis 101 to the radially outer side, the amount of heat conduction transferred from the heater 210 to the wafer w also increases. .

Also in the wafer block according to the present embodiment configured as described above, by the opposing surface 154 and the plurality of protrusions 152 on the wafer support plate 150, the same effects as in the first embodiment of the present invention can be obtained. .

9 is a side cross-sectional view of a wafer block according to a fourth embodiment of the present invention.

Referring to FIG. 9, in the wafer block according to the fourth embodiment of the present invention, the wafer support part 100 includes a susceptor 160, a susceptor support plate 170, and a shaft 120. The susceptor 160 and the susceptor support plate 170 have the same configuration and function as the susceptor 130 and the susceptor support plate 140 shown in FIG. 5, and a detailed description thereof will be omitted. do.

In the wafer block of the fourth embodiment configured as described above, the heat transfer process from the susceptor 160 to the wafer w is also carried out with the principle of the heat transfer process from the wafer support plate 150 to the wafer w described with reference to FIG. 8. same. However, in the present embodiment, the wafer support unit 100 is configured to be separated into the susceptor 160 and the susceptor support plate 170, and the heater 210 for heating the wafer w is the susceptor support plate. Since it is embedded in the 170, the heat generated by the heater 210 is transferred to the wafer w via the susceptor support plate 170 and the susceptor 160.

Also in the wafer block according to the present embodiment configured as described above, by the opposing surface 154 and the plurality of protrusions 152 on the susceptor 160, the same effects as in the first embodiment of the present invention can be obtained. .

In the second and fourth embodiments of the present invention, the susceptor and the susceptor support plate may be made of a material having the same thermal conductivity, or may be made of a material having different thermal conductivity.

In the embodiments of the present invention, the plurality of protrusions are formed such that the distance between two adjacent protrusions is gradually narrowed toward the radially outer side from the center portion of the wafer support, or the diameter of each of the protrusions is gradually increased. The opposing surface may be divided into several virtual regions with the center axis of the wafer support as the same axis, so that the spacing between the two adjacent protrusions or the diameter of the protrusions may be different for each divided region.

In addition, in the embodiments of the present invention, the protrusion formed to protrude upward from the opposing surface is manufactured in the shape of a cylinder, but can be manufactured in other shapes such as a square pillar and a cone, and also shown in the quantity The quantity is not limited to this, and may vary depending on the conditions required for the thin film to be deposited.

In addition, in the embodiments of the present invention, the upper end of the projection is formed into a flat surface, the lower surface of the wafer and the projection is in surface contact, as shown in FIG. The projections may be formed so that the projections are in point contact with the lower surface of the wafer.

Although the preferred embodiments and modifications have been described above, the wafer block according to the present invention is not limited to the above-described examples, and various modifications and combinations thereof may be made without departing from the technical spirit of the present invention. Shaped wafer blocks can be embodied.

In the wafer block of the present invention, as the contact area of the wafer and the projections on which the wafer is seated increases from the center to the edge of the wafer, it becomes possible to heat the wafer while thermally balancing the entire surface of the wafer, thereby being deposited on the wafer. There is an effect that the thickness of the thin film can be uniformly formed.

In addition, since the vacuum state can be prevented from being formed between the lower surface of the wafer and the plurality of protrusions when the wafer is seated, there is an effect of preventing the impact on the wafer during the unloading of the wafer. .

Claims (6)

In a wafer block comprising a wafer support portion on which the wafer is seated, and a heater for heating the wafer, The wafer support portion includes an opposing surface facing the wafer and a plurality of protrusions formed to protrude upward from the opposing surface, the top surface of which is in contact with the bottom surface of the wafer, The projections are wafer blocks, characterized in that the gap between the two adjacent projections are arranged toward the radially outward from the center of the wafer support. In a wafer block comprising a wafer support portion on which the wafer is seated, and a heater for heating the wafer, The wafer support portion includes an opposing surface facing the wafer and a plurality of protrusions formed to protrude upward from the opposing surface, the top surface of which is in contact with the bottom surface of the wafer, Wafer block, characterized in that the top surface area of one of the projections is smaller than the top surface area of the other projection located radially outer side of the wafer support than the projection. The method according to claim 1 or 2, The wafer support portion, And a wafer support plate having the heater built therein, the wafer supporting plate having the opposite surface and the plurality of protrusions formed thereon. The method according to claim 1 or 2, The wafer support portion, And a susceptor having the opposing surface and the plurality of protrusions formed on an upper surface thereof, and a susceptor support plate disposed to be in contact with the lower surface of the susceptor and having the heater built therein. The method according to claim 1 or 2, Wafer block, characterized in that the upper end of the projection and the wafer is in surface contact. The method according to claim 1 or 2, Wafer block, characterized in that the upper end of the projection and the wafer is in point contact.

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