JPWO2018116656A1 - Magnetoresistive device - Google Patents

Abstract

The magnetoresistance effect device 100 includes a first magnetoresistance effect element 101a, 101b, a second magnetoresistance effect element 101c, a first port 109a, a second port 109b, a signal line 107, and a DC application. A first port, a first magnetoresistive effect element, and a second port are connected in series via a signal line in this order, and the first port, the second magnetoresistive effect element, and the second port The two ports are connected in series via a signal line in this order, and the first magnetoresistive element and the second magnetoresistive element are input from the DC application terminal and are connected to the first magnetoresistive element and the second magnetic element. The relationship between the direction of the direct current flowing in each of the resistance effect elements and the arrangement order of the magnetization fixed layer, the spacer layer, and the magnetization free layer is determined by the first magnetoresistance effect element and the second magnetoresistance effect. Is formed so as to be reversed in the element, the spin torque resonance frequency of the spin torque resonance frequency and the second magnetoresistive element of the first magnetoresistive element is different from each other.

Description

  The present invention relates to a magnetoresistive effect device using a magnetoresistive effect element.

  In recent years, with the enhancement of functions of mobile communication terminals such as mobile phones, the speed of wireless communication has been increased. Since the communication speed is proportional to the bandwidth of the frequency to be used, the frequency band necessary for communication has increased, and accordingly, the number of high-frequency filters required for mobile communication terminals has also increased. In recent years, spintronics has been studied as a field that can be applied to new high-frequency components, and one of the phenomena attracting attention is spin torque resonance due to magnetoresistive elements ( Non-patent document 1). By passing an alternating current through the magnetoresistive effect element, spin torque resonance can be caused in the magnetoresistive effect element, and the resistance value of the magnetoresistive effect element periodically vibrates at a frequency corresponding to the spin torque resonance frequency. The spin torque resonance frequency of the magnetoresistive effect element changes depending on the strength of the magnetic field applied to the magnetoresistive effect element, and the resonance frequency is generally in the high frequency band of several to several tens GHz.

Nature, Vol. 438, no. 7066, pp. 339-342, 17 November 2005

  The magnetoresistive effect element may be applied to a high frequency device using a spin torque resonance phenomenon, but a specific configuration for applying to a high frequency device such as a high frequency filter has not been shown heretofore. An object of this invention is to provide the magnetoresistive effect device which can implement | achieve high frequency devices, such as a high frequency filter using a magnetoresistive effect element.

  In order to achieve the above object, a magnetoresistive effect device according to the present invention includes a first magnetoresistive effect element, a second magnetoresistive effect element, a first port to which a high frequency signal is input, and a high frequency signal. A second port to be output, a signal line, and a DC application terminal are provided, and the first port, the first magnetoresistive element, and the second port are arranged in this order via the signal line. The first port, the second magnetoresistance effect element, and the second port are connected in series in this order via the signal line, and the first magnetoresistance effect element and the second port are connected in series. The magnetoresistive effect element has a magnetization fixed layer, a magnetization free layer, and a spacer layer arranged therebetween, and the first magnetoresistive effect element and the second magnetoresistive effect element are configured to apply the direct current. Input from terminal The direction of the direct current flowing through each of the first magnetoresistive element and the second magnetoresistive element, and the arrangement order of the magnetization fixed layer, the spacer layer, and the magnetization free layer The first magnetoresistive element and the second magnetoresistive element are formed so that the relationship is reversed, and the spin torque resonance frequency of the first magnetoresistive element and the second magnetoresistive element The first characteristic is that the spin torque resonance frequencies of the effect elements are different from each other.

  According to the magnetoresistive effect device having the above characteristics, a direct current input from the DC application terminal flows in the first magnetoresistive effect element from the magnetization free layer to the magnetization fixed layer, and the second magnetoresistance effect When flowing in the element in the direction from the magnetization fixed layer to the magnetization free layer, the high-frequency signal input from the first port is converted to the second frequency at a frequency in the vicinity of the spin torque resonance frequency of the first magnetoresistance effect element. It can be passed to the port side and can be blocked from the second port at a frequency in the vicinity of the spin torque resonance frequency of the second magnetoresistive element. That is, the magnetoresistive device having the above characteristics functions as a high-frequency filter (a band-pass filter or a band cutoff filter).

  When the magnetoresistive effect device in this case is considered as a bandpass filter, the band near the spin torque resonance frequency of the first magnetoresistive effect element is the passband. Since the spin torque resonance frequency of the first magnetoresistive effect element and the spin torque resonance frequency of the second magnetoresistive effect element are different from each other (the spin torque resonance frequency of the second magnetoresistive effect element is the first magnetoresistive effect element). Therefore, the high frequency signal can be blocked from the second port on the high frequency side or the low frequency side of the spin torque resonance frequency of the first magnetoresistive effect element. In the vicinity of the spin torque resonance frequency of the second magnetoresistive element in which the high-frequency signal is blocked, the ratio of the attenuation amount to the attenuation amount of the high-frequency signal in the pass band can be further increased. The shoulder characteristics on the high frequency side or low frequency side of the pass band formed in the vicinity of the spin torque resonance frequency of the effect element can be made steep.

  When the magnetoresistive effect device in this case is considered as a band cutoff filter, the band near the spin torque resonance frequency of the second magnetoresistive element is the cutoff band. Since the spin torque resonance frequency of the first magnetoresistive effect element and the spin torque resonance frequency of the second magnetoresistive effect element are different from each other (the spin torque resonance frequency of the first magnetoresistive effect element is the second magnetoresistive effect element). Therefore, the high frequency signal can be passed to the second port side on the high frequency side or the low frequency side of the spin torque resonance frequency of the second magnetoresistive effect element. In the vicinity of the spin torque resonance frequency of the first magnetoresistive effect element through which the high frequency signal passes, the ratio of the attenuation amount to the attenuation amount of the high frequency signal in the cutoff band can be further reduced. The shoulder characteristics on the high frequency side or low frequency side of the cutoff band formed in the vicinity of the spin torque resonance frequency of the element can be made steep. That is, the magnetoresistive device having the above characteristics can function as a bandpass filter or a bandcut filter having a steep shoulder characteristic on the high frequency side or the low frequency side of the pass band or the stop band.

  Further, according to the magnetoresistive effect device having the above characteristics, a direct current input from the direct current application terminal flows in the first magnetoresistive effect element in the direction from the magnetization fixed layer to the magnetization free layer. When flowing in the direction from the magnetization free layer to the magnetization fixed layer in the resistance effect element, the high frequency signal input from the first port is changed to the first at the frequency near the spin torque resonance frequency of the first magnetoresistance effect element. The second port can be blocked, and at the frequency near the spin torque resonance frequency of the second magnetoresistive element, it can be passed to the second port side. That is, the magnetoresistive effect device having the above characteristics functions as a high frequency filter (a band cutoff filter or a band pass filter).

  When the magnetoresistive effect device in this case is considered as a band cutoff filter, the band near the spin torque resonance frequency of the first magnetoresistive effect element is the cutoff band. Since the spin torque resonance frequency of the first magnetoresistive effect element and the spin torque resonance frequency of the second magnetoresistive effect element are different from each other (the spin torque resonance frequency of the second magnetoresistive effect element is the first magnetoresistive effect element). Therefore, the high frequency signal can be passed to the second port side on the high frequency side or the low frequency side of the spin torque resonance frequency of the first magnetoresistive effect element. In the vicinity of the spin torque resonance frequency of the second magnetoresistive effect element through which the high frequency signal passes, the ratio of the attenuation amount to the attenuation amount of the high frequency signal in the cutoff band can be further reduced. The shoulder characteristics on the high frequency side or low frequency side of the cutoff band formed in the vicinity of the spin torque resonance frequency of the element can be made steep.

  When the magnetoresistive effect device in this case is considered as a bandpass filter, the band near the spin torque resonance frequency of the second magnetoresistive effect element is the passband. Since the spin torque resonance frequency of the first magnetoresistive effect element and the spin torque resonance frequency of the second magnetoresistive effect element are different from each other (the spin torque resonance frequency of the first magnetoresistive effect element is the second magnetoresistive effect element). Therefore, the high frequency signal can be cut off from the second port on the high frequency side or the low frequency side of the spin torque resonance frequency of the second magnetoresistive effect element. In the vicinity of the spin torque resonance frequency of the first magnetoresistive effect element in which the high frequency signal is blocked, the ratio of the attenuation amount to the attenuation amount of the high frequency signal in the pass band can be further increased. The shoulder characteristics on the high frequency side or low frequency side of the pass band formed in the vicinity of the spin torque resonance frequency of the effect element can be made steep. That is, the magnetoresistive effect device having the above characteristics can function as a band cut filter or a band pass filter having a steep shoulder characteristic on the high frequency side or the low frequency side of the cut band or the pass band.

  In order to achieve the above object, a magnetoresistive effect device according to the present invention includes a first magnetoresistive effect element, a second magnetoresistive effect element, a first port to which a high frequency signal is input, a high frequency A second port through which a signal is output; a signal line; a DC application terminal capable of applying a DC current or a DC voltage to the magnetoresistive effect element; and a reference potential terminal; One magnetoresistive element and the second port are connected in series via the signal line in this order, and the first port, the second magnetoresistive element, and the second port are connected to the signal line. The first magnetoresistive element and the second magnetoresistive element each have a magnetization fixed layer, a magnetization free layer, and a spacer layer disposed therebetween, First magnet The resistance effect element and the second magnetoresistance effect element have the DC application terminal and the reference potential terminal so that one end side thereof is the DC application terminal side and the other end side thereof is the reference potential terminal side. The first magnetoresistive element and the second magnetoresistive element are connected to each other from the one end side to the other end side and from the respective magnetization free layer to the magnetization fixed layer. The first magnetoresistive element and the second magnetoresistive element are formed in opposite relations to each other, and the spin torque resonance frequency of the first magnetoresistive element and the first magnetoresistive element are The second feature is that the spin torque resonance frequencies of the two magnetoresistive effect elements are different from each other.

  The magnetoresistive effect device having the above characteristics is similar to the magnetoresistive effect device having the first feature described above. It becomes possible to function as a band cutoff filter.

  ADVANTAGE OF THE INVENTION According to this invention, the magnetoresistive effect device which can implement | achieve high frequency devices, such as a high frequency filter using a magnetoresistive effect element, can be provided.

It is the cross-sectional schematic diagram which showed the structure of the magnetoresistive effect device which concerns on 1st Embodiment. It is the graph which showed the relationship between the frequency of the magnetoresistive effect device which concerns on 1st Embodiment, and attenuation amount. It is the graph which showed the relationship between the frequency with respect to the direct current of the magnetoresistive effect device which concerns on 1st Embodiment, and attenuation amount. It is the graph which showed the relationship between the frequency with respect to the magnetic field intensity of the magnetoresistive effect device which concerns on 1st Embodiment, and attenuation amount. It is the cross-sectional schematic diagram which showed the structure of the magnetoresistive effect device which concerns on 2nd Embodiment. It is the graph which showed the relationship between the frequency of the magnetoresistive effect device which concerns on 2nd Embodiment, and attenuation amount. It is the cross-sectional schematic diagram which showed the structure of the magnetoresistive effect device which concerns on 3rd Embodiment. It is the graph which showed the relationship between the frequency of the magnetoresistive effect device which concerns on 3rd Embodiment, and attenuation amount. It is the graph which showed the relationship between the frequency with respect to the direct current of the magnetoresistive effect device which concerns on 3rd Embodiment, and attenuation amount. It is the graph which showed the relationship between the frequency with respect to the magnetic field intensity of the magnetoresistive effect device which concerns on 3rd Embodiment, and attenuation amount. It is the cross-sectional schematic diagram which showed the structure of the magnetoresistive effect device which concerns on 4th Embodiment. It is the graph which showed the relationship between the frequency of the magnetoresistive effect device which concerns on 4th Embodiment, and attenuation amount.

  Preferred embodiments for carrying out the present invention will be described in detail with reference to the drawings. The present invention is not limited by the contents described in the following embodiments. The constituent elements described below include those that can be easily assumed by those skilled in the art, those that are substantially the same, and those that are in an equivalent range. Furthermore, the constituent elements described below can be appropriately combined. In addition, various omissions, substitutions, or changes of the components can be made without departing from the scope of the present invention.

(First embodiment)
FIG. 1 is a schematic cross-sectional view of a magnetoresistive device 100 according to a first embodiment of the present invention. The magnetoresistance effect device 100 includes a magnetization fixed layer 102 (first magnetization fixed layer), a magnetization free layer 104 (first magnetization free layer), and a spacer layer 103 (first spacer layer) disposed therebetween. First magnetoresistive effect elements 101a and 101b having magnetic field, magnetization fixed layer 102 (second magnetization fixed layer), magnetization free layer 104 (second magnetization free layer), and spacers disposed therebetween A second magnetoresistive element 101c having a layer 103 (second spacer layer), a first port 109a to which a high-frequency signal is input, a second port 109b to which a high-frequency signal is output, and a signal line 107 And a direct current input terminal 110 as an example of a direct current application terminal. The first port 109a, the two first magnetoresistive elements 101a and 101b, and the second port 109b are connected in series via the signal line 107 in this order, and the first port 109a and the second magnetoresistive element 101c and the second port 109b are connected in series via the signal line 107 in this order. More specifically, the two first magnetoresistance effect elements 101a and 101b are connected in series with each other, the first magnetoresistance effect element 101a and the second magnetoresistance effect element 101c are connected in series with each other, The magnetoresistive effect element 101b and the second magnetoresistive effect element 101c are connected in series with each other. Further, the magnetoresistive effect device 100 includes an inductor 113 and a reference potential terminal 114, and the inductor 113 is connected in parallel to the second port 109b, the two first magnetoresistive effect elements 101a and 101b, and the first. Signal line 107 between the second magnetoresistance effect element 101c and the second port 109b (between the first magnetoresistance effect elements 101a and 101b and between the second magnetoresistance effect element 101c and the first port 109a). Signal line 107 or one of signal lines 107 between first magnetoresistive effect elements 101a and 101b and second magnetoresistive effect element 101c and second port 109b), and further connected to reference potential terminal 114 Connected to the ground 108 via the reference potential terminal 114. The ground 108 can be external to the magnetoresistive device 100. The direct current input terminal 110 includes two first magnetoresistive elements 101a and 101b and a signal line 107 (first magnetoresistive element 101a) between the second magnetoresistive element 101c and the first port 109a. , 101b and the second magnetoresistive effect element 101c and the first port 109a, or the first magnetoresistive effect elements 101a and 101b and the second magnetoresistive effect element 101c and the second port 109b is connected to the other of the signal line 107 to 109b. The magnetoresistive effect device 100 is used with the reference potential terminal 114 connected to the ground 108 and the direct current source 112 connected to the direct current input terminal 110 and the ground 108. When the direct current source 112 is connected to the direct current input terminal 110 and the ground 108, the magnetoresistive effect device 100 includes two first magnetoresistive effect elements 101a and 101b, a second magnetoresistive effect element 101c, and a signal. A closed circuit including the line 107, the inductor 113, the ground 108, and the direct current input terminal 110 can be formed.

  Each of the first magnetoresistive elements 101a and 101b has one end side (in this example, the magnetization free layer 104 side) on the DC current input terminal 110 side and each other end side (in this example, the magnetization fixed layer 102 side). ) Is connected to the DC current input terminal 110 and the reference potential terminal 114 so that the reference potential terminal 114 is on the side. One end side (in this example, the magnetization fixed layer 102 side) of the second magnetoresistive element 101c is the DC current input terminal 110 side, and the other end side (in this example, the magnetization free layer 104 side) is the reference potential terminal. The DC current input terminal 110 and the reference potential terminal 114 are connected so as to be on the 114 side. That is, in the magnetoresistive effect device 100, the first magnetoresistive effect elements 101 a and 101 b and the second magnetoresistive effect element 101 c are oriented from one end side to the other end side and from each magnetization free layer 104. The first magnetoresistive effect elements 101a and 101b and the second magnetoresistive effect element 101c are formed so that the relationship with the direction to the magnetization fixed layer 102 is opposite. In this example, in the first magnetoresistive effect elements 101a and 101b, the direction from one end side to the other end side and the direction from each magnetization free layer 104 to the magnetization fixed layer 102 are in the same direction. In the second magnetoresistive element 101c, the direction from one end side to the other end side is opposite to the direction from the magnetization free layer 104 to the magnetization fixed layer 102. Yes.

  The first magnetoresistance effect element 101a is formed such that a direct current input from the direct current input terminal 110 flows in the first magnetoresistance effect element 101a in the direction from the magnetization free layer 104 to the magnetization fixed layer 102. Has been. The first magnetoresistance effect element 101b is formed such that a direct current input from the direct current input terminal 110 flows in the first magnetoresistance effect element 101b in the direction from the magnetization free layer 104 to the magnetization fixed layer 102. Has been. The second magnetoresistive effect element 101c is formed such that a DC current input from the DC current input terminal 110 flows in the first magnetoresistive effect element 101c in the direction from the magnetization fixed layer 102 to the magnetization free layer 104. Has been. That is, in the magnetoresistive effect device 100, the direction of the direct current flowing through each of the first magnetoresistive effect element 101a, the first magnetoresistive effect element 101b, and the second magnetoresistive effect element 101c, and the respective magnetizations. The relationship between the arrangement order of the fixed layer 102, the spacer layer 103, and the magnetization free layer 104 is reversed between the two first magnetoresistive elements 101a and 101b and the second magnetoresistive element 101c. Note that in this specification, a direct current is a current whose direction does not change with time, and includes a current whose magnitude changes with time. Further, in this specification, the DC voltage is a voltage whose direction does not change with time, and includes a voltage whose magnitude changes with time.

  Further, the spin torque resonance frequency of the first magnetoresistance effect element 101a, the spin torque resonance frequency of the first magnetoresistance effect element 101b, and the spin torque resonance frequency of the second magnetoresistance effect element 101c are different from each other. In the magnetoresistance effect device 100, the spin torque resonance frequency of the second magnetoresistance effect element 101c is greater than the spin torque resonance frequency of the first magnetoresistance effect element 101a and the spin torque resonance frequency of the first magnetoresistance effect element 101b. Or higher than the spin torque resonance frequency of the first magnetoresistive effect element 101a and the spin torque resonance frequency of the first magnetoresistive effect element 101b.

  The first port 109a is an input port to which a high frequency signal that is an AC signal is input, and the second port 109b is an output port to which a high frequency signal is output. The high frequency signal input to the first port 109a and the high frequency signal output from the second port 109b are, for example, signals having a frequency of 100 MHz or more. The first magnetoresistive effect elements 101a and 101b and the second magnetoresistive effect element 101c are electrically connected to the signal line 107 via the upper electrode 105 and the lower electrode 106, respectively. A high-frequency signal input from the first port 109a is output to the second port 109b after passing through the two first magnetoresistive elements 101a and 101b and the second magnetoresistive element 101c. The attenuation (S21), which is the dB value of the power ratio (output power / input power) when the high-frequency signal passes from the first port 109a to the second port 109b, is measured by a high-frequency measuring instrument such as a network analyzer. It can be measured.

  The upper electrode 105 and the lower electrode 106 serve as a pair of electrodes, and are arranged via the magnetoresistive elements in the stacking direction of the layers constituting the magnetoresistive elements. That is, the upper electrode 105 and the lower electrode 106 form a signal (current) with respect to each magnetoresistive effect element in a direction intersecting the surface of each layer constituting each magnetoresistive effect element, for example, each magnetoresistive effect element. It functions as a pair of electrodes for flowing in a direction perpendicular to the surface of each layer (stacking direction). The upper electrode 105 and the lower electrode 106 are preferably made of Ta, Cu, Au, AuCu, Ru, or any two or more films of these materials. One end (magnetization free layer 104 side) of each of the two first magnetoresistance effect elements 101a and 101b is electrically connected to the signal line 107 via the upper electrode 105, and the other end (magnetization fixed layer 102 side). The signal line 107 is electrically connected via the lower electrode 106. The second magnetoresistive element 101c has one end (on the magnetization fixed layer 102 side) electrically connected to the signal line 107 via the lower electrode 106, and the other end (the magnetization free layer 104 side) on the upper electrode 105. Is electrically connected to the signal line 107.

  The ground 108 functions as a reference potential. The shapes of the signal line 107 and the ground 108 are preferably defined as a microstrip line (MSL) type or a coplanar waveguide (CPW) type. When designing a microstrip line shape or a coplanar waveguide shape, the signal line width of the signal line 107 and the distance between grounds are designed so that the characteristic impedance of the signal line 107 is equal to the impedance of the circuit system. Can be a transmission line with a small transmission loss.

  The DC current input terminal 110 is a signal line at a position opposite to the connection position of the inductor 113 to the signal line 107 across the two first magnetoresistive elements 101a and 101b and the second magnetoresistive element 101c. 107 is connected. More specifically, the direct current input terminal 110 is connected to the signal line 107 between the connection portion of the first magnetoresistive element 101a to the signal line 107 and the first port 109a. By connecting a direct current source 112 to the direct current input terminal 110, direct current is applied to each of the two first magnetoresistive elements 101a and 101b and the second magnetoresistive element 101c in the respective stacking directions. It becomes possible to apply. Further, an inductor or a resistance element for cutting a high-frequency signal may be connected in series between the DC current input terminal 110 and the DC current source 112.

  The inductor 113 is connected between the signal line 107 and the ground 108 and has a function of cutting the high frequency component of the current by the inductor component and simultaneously passing the current invariant component. The inductor 113 may be either a chip inductor or an inductor using a pattern line. Also, a resistance element having an inductor component may be used. The inductance value of the inductor 113 is preferably 10 nH or more. With this inductor 113, the two first magnetoresistive elements 101a, 101a, 101b, 101b, and the second magnetoresistive element 101c are not degraded without deteriorating the characteristics of the high-frequency signal. The DC current applied from the DC current input terminal 110 can be passed through a closed circuit including the 101b, the second magnetoresistive effect element 101c, the signal line 107, the inductor 113, the ground 108, and the DC current input terminal 110.

  The direct current source 112 is connected to the ground 108 and the direct current input terminal 110 and is connected to the two first magnetoresistive elements 101a and 101b, the signal line 107, the second magnetoresistive element 101c, the inductor 113, the ground 108, and A closed circuit including the direct current input terminal 110 is formed. The direct current source 112 applies a direct current from the direct current input terminal 110 to the closed circuit. The direct current source 112 is configured by, for example, a circuit of a combination of a variable resistor and a direct current voltage source, and is configured to be able to change the current value of the direct current. The direct current source 112 may be configured by a circuit of a combination of a fixed resistor and a direct current voltage source that can generate a constant direct current.

  The magnetic field application mechanism 111 is disposed in the vicinity of the two first magnetoresistive elements 101a and 101b and the second magnetoresistive element 101c, and the two first magnetoresistive elements 101a and 101b and the second magnetoresistive element 101c. By applying a magnetic field (static magnetic field) to the magnetoresistive effect element 101c, the spin torque resonance frequency of each magnetoresistive effect element can be set. For example, the magnetic field application mechanism 111 is configured as an electromagnet type or a stripline type that can variably control the applied magnetic field intensity by either voltage or current. The magnetic field application mechanism 111 may be configured by a combination of an electromagnet type or stripline type and a permanent magnet that supplies only a constant magnetic field. Further, the magnetic field application mechanism 111 may be arranged separately for each magnetoresistive effect element and may have a structure in which the spin torque resonance frequency of each magnetoresistive effect element can be set independently. The magnetic field application mechanism 111 changes the effective magnetic field in the magnetization free layer 104 by changing the magnetic field applied to each magnetoresistive effect element, thereby changing the spin torque resonance frequency of each magnetoresistive effect element.

The magnetization fixed layer 102 is made of a ferromagnetic material, and its magnetization direction is substantially fixed in one direction. The magnetization fixed layer 102 is preferably made of a high spin polarizability material such as Fe, Co, Ni, an alloy of Ni and Fe, an alloy of Fe and Co, or an alloy of Fe, Co and B. Thereby, a high magnetoresistance change rate can be obtained. The magnetization fixed layer 102 may be made of a Heusler alloy. The thickness of the magnetization fixed layer 102 is preferably 1 to 10 nm. Further, an antiferromagnetic layer may be added so as to be in contact with the magnetization fixed layer 102 in order to fix the magnetization of the magnetization fixed layer 102. Alternatively, the magnetization of the magnetization fixed layer 102 may be fixed using magnetic anisotropy due to the crystal structure, shape, or the like. For the antiferromagnetic layer, FeO, CoO, NiO, CuFeS ₂ , IrMn, FeMn, PtMn, Cr, Mn, or the like can be used.

  The spacer layer 103 is disposed between the magnetization fixed layer 102 and the magnetization free layer 104, and the magnetoresistance effect is obtained by the interaction between the magnetization of the magnetization fixed layer 102 and the magnetization of the magnetization free layer 104. The spacer layer 103 includes a layer formed of a conductor, an insulator, and a semiconductor, or a layer including a conduction point formed of a conductor in the insulator.

  In the case of applying a nonmagnetic conductive material as the spacer layer 103, examples of the material include Cu, Ag, Au, and Ru, and the magnetoresistive element exhibits a giant magnetoresistance (GMR) effect. When the GMR effect is used, the thickness of the spacer layer 103 is preferably about 0.5 to 3.0 nm.

When a nonmagnetic insulating material is applied as the spacer layer 103, examples of the material include Al ₂ O ₃ or MgO, and the magnetoresistive element exhibits a tunnel magnetoresistance (TMR) effect. A high magnetoresistance change rate can be obtained by adjusting the film thickness of the spacer layer 103 so that a coherent tunnel effect appears between the magnetization fixed layer 102 and the magnetization free layer 104. When utilizing the TMR effect, the thickness of the spacer layer 103 is preferably about 0.5 to 3.0 nm.

  In the case of applying a nonmagnetic semiconductor material as the spacer layer 103, the material is ZnO, In ₂O₃, SnO₂, ITO, GaO_xOr Ga₂O_xThe thickness of the spacer layer 103 is preferably about 1.0 to 4.0 nm.

When a layer including a conduction point constituted by a conductor in a nonmagnetic insulator is applied as the spacer layer 103, a nonmagnetic insulator constituted by Al ₂ O ₃ or MgO includes CoFe, CoFeB, CoFeSi, CoMnGe, A structure including a conduction point constituted by a conductor such as CoMnSi, CoMnAl, Fe, Co, Au, Cu, Al, or Mg is preferable. In this case, the thickness of the spacer layer 103 is preferably about 0.5 to 2.0 nm.

  The magnetization free layer 104 can change the magnetization direction and is made of a ferromagnetic material. The direction of magnetization of the magnetization free layer 104 can be changed by, for example, an externally applied magnetic field or spin-polarized electrons. In the case where the magnetization free layer 104 is a material having an easy axis in the in-plane direction, examples of the material include CoFe, CoFeB, CoFeSi, CoMnGe, CoMnSi, and CoMnAl, and the thickness is about 1 to 30 nm. preferable. When the magnetization free layer 104 is a material having an axis of easy magnetization in the normal direction of the film surface, the material is Co, CoCr alloy, Co multilayer film, CoCrPt alloy, FePt alloy, SmCo alloy containing rare earth, or TbFeCo. An alloy etc. are mentioned. Further, the magnetization free layer 104 may be made of a Heusler alloy. Further, a high spin polarizability material may be inserted between the magnetization free layer 104 and the spacer layer 103. This makes it possible to obtain a high magnetoresistance change rate. Examples of the high spin polarizability material include a CoFe alloy and a CoFeB alloy. The film thickness of either the CoFe alloy or the CoFeB alloy is preferably about 0.2 to 1.0 nm.

  Further, a cap layer, a seed layer, or a buffer layer may be provided between the upper electrode 105 and each magnetoresistive element and between the lower electrode 106 and each magnetoresistive element. Examples of the cap layer, seed layer, or buffer layer include Ru, Ta, Cu, Cr, or a laminated film thereof. The thickness of these layers is preferably about 2 to 10 nm.

  In addition, as for the magnitude | size of each magnetoresistive effect element, when a planar view shape is a rectangle (a square is included), it is desirable for a long side to be about 100 nm or 100 nm or less. When the planar view shape is not a rectangle, the long side of the rectangle circumscribing the planar view shape with the minimum area is defined as the long side of each magnetoresistive element. When the long side is as small as about 100 nm, the magnetic domain of the magnetization free layer 104 can be made into a single domain, and a highly efficient spin torque resonance phenomenon can be realized. Here, the “planar shape” is a shape viewed in a plane perpendicular to the stacking direction of each layer constituting each magnetoresistive element.

  Here, the spin torque resonance phenomenon will be described.

  When a high frequency signal having the same frequency as the intrinsic spin torque resonance frequency of the magnetoresistive effect element is input to the magnetoresistive effect element, the magnetization of the magnetization free layer vibrates at the spin torque resonance frequency. This phenomenon is called a spin torque resonance phenomenon. The element resistance value of the magnetoresistive effect element is determined by the relative angle of magnetization between the magnetization fixed layer and the magnetization free layer. Therefore, the resistance value of the magnetoresistive element at the time of spin torque resonance changes periodically with the vibration of the magnetization of the magnetization free layer. That is, the magnetoresistive effect element can be handled as a resistance vibration element whose resistance value periodically changes at the spin torque resonance frequency.

  A high-frequency signal having the same frequency as the spin torque resonance frequency is applied to each magnetoresistive effect element while applying a direct current flowing in each magnetoresistive effect element from the magnetization free layer 104 to the magnetization fixed layer 102 to each magnetoresistive effect element. When each of the magnetoresistive elements is in the same phase as the input high-frequency signal, the resistance value periodically changes at the spin torque resonance frequency, and the impedance to the high-frequency signal decreases. That is, in the magnetoresistive effect device 100, the two first magnetoresistive effect elements 101a and 101b can be handled as resistance elements in which the impedance of the high-frequency signal decreases at the spin torque resonance frequency due to the spin torque resonance phenomenon.

  Further, while applying a direct current flowing through each magnetoresistive effect element from the magnetization fixed layer 102 to the magnetization free layer 104 to each magnetoresistive effect element, each magnetoresistive effect element has the same frequency as the spin torque resonance frequency. When a high-frequency signal is input, each magnetoresistive effect element periodically changes its resistance value at the spin torque resonance frequency in a state where the phase differs from the input high-frequency signal by 180 °, and the impedance to the high-frequency signal increases. . That is, in the magnetoresistive effect device 100, the second magnetoresistive effect element 101c can be handled as a resistance element in which the impedance of the high frequency signal increases at the spin torque resonance peripheral frequency due to the spin torque resonance phenomenon.

  The spin torque resonance frequency changes depending on the effective magnetic field in the magnetization free layer 104. Effective magnetic field H in the magnetization free layer 104_effIs an external magnetic field H applied to the magnetization free layer 104 _E, Anisotropic magnetic field H in the magnetization free layer 104_k, Demagnetizing field H in the magnetization free layer 104_D, Exchange coupling magnetic field H in magnetization free layer 104_EXUsing,
H_eff= H_E+ H_k+ H_D+ H_EX
It is represented by The magnetic field application mechanism 111 applies a magnetic field to the two first magnetoresistive elements 101a and 101b and the second magnetoresistive element 101c, and applies an external magnetic field H to each magnetization free layer 104._EIs applied to the effective magnetic field H in each magnetization free layer 104._effIs an effective magnetic field setting mechanism. The magnetic field application mechanism 111 which is an effective magnetic field setting mechanism changes the magnetic field applied to the two first magnetoresistive effect elements 101a and 101b and the second magnetoresistive effect element 101c, thereby enabling effective in each magnetization free layer 104. The spin torque resonance frequency of each of the two first magnetoresistive elements 101a and 101b and the second magnetoresistive element 101c can be changed by changing the magnetic field. As described above, when the magnetic field applied to the first magnetoresistive effect element 101a, the first magnetoresistive effect element 101b, and the second magnetoresistive effect element 101c is changed, the first magnetoresistive effect elements 101a and 101b are changed. And the spin torque resonance frequency of each of the 2nd magnetoresistive effect element 101c changes.

  Further, when a direct current is applied to the two first magnetoresistive elements 101a and 101b and the second magnetoresistive element 101c at the time of spin torque resonance, the spin torque increases and the amplitude of the resistance value that vibrates is increased. Will increase. As the amplitude of the oscillating resistance value increases, the amount of change in element impedance of each of the two first magnetoresistive elements 101a and 101b and the second magnetoresistive element 101c increases. Further, when the current density of the applied direct current is changed, the spin torque resonance frequency is changed. Accordingly, the spin torque resonance frequencies of the two first magnetoresistive elements 101a and 101b and the second magnetoresistive element 101c change the magnetic field from the magnetic field application mechanism 111 or from the direct current input terminal 110, respectively. Can be changed by changing the applied DC current. The current density of the direct current applied to each of the two first magnetoresistive elements 101a and 101b and the second magnetoresistive element 101c is preferably smaller than the respective oscillation threshold current densities. The oscillation threshold current density of the magnetoresistive effect element is a precession of the magnetization of the magnetization free layer of the magnetoresistive effect element at a constant frequency and a constant amplitude by applying a direct current with a current density equal to or higher than this value. This is the threshold current density at which the magnetoresistive effect element oscillates (the output (resistance value) of the magnetoresistive effect element fluctuates at a constant frequency and a constant amplitude).

  Further, when a direct current having the same magnetic field and the same current density is applied to the magnetoresistive effect element, the spin torque resonance of the magnetoresistive effect element increases as the aspect ratio of the plan view shape of the magnetoresistive effect element increases. The frequency increases. Here, the “aspect ratio of the planar shape” is the ratio of the length of the long side to the length of the short side of the rectangle circumscribing the planar shape of the magnetoresistive element with a minimum area. For example, the first magnetoresistive effect element 101a, the first magnetoresistive effect element 101b, and the second magnetoresistive effect element 101c have the same film configuration and are rectangular in plan view. By making the aspect ratios of the shapes different from each other, the spin torque resonance frequency of the first magnetoresistance effect element 101a, the spin torque resonance frequency of the first magnetoresistance effect element 101b, and the second magnetoresistance effect element 101c The spin torque resonance frequencies can be different from each other. Here, “the film configuration is the same” means that the materials and film thicknesses of the layers constituting the magnetoresistive element are the same, and the stacking order of the layers is the same.

  Due to the spin torque resonance phenomenon, among the high frequency components of the high frequency signal input from the first port 109a, the frequency components that coincide with the spin torque resonance frequency of the first magnetoresistive effect element 101a or in the vicinity of the spin torque resonance frequency. Passes through the first magnetoresistive element 101a in the low impedance state, and is easily output to the second port 109b. On the other hand, frequency components that are not in the vicinity of the spin torque resonance frequency of the first magnetoresistive effect element 101a in the high frequency component of the high frequency signal are transferred to the second port 109b by the first magnetoresistive effect element 101a in the high impedance state. It becomes difficult to output. Similarly, among the high-frequency components of the high-frequency signal input from the first port 109a, the frequency component that matches or is close to the spin torque resonance frequency of the first magnetoresistive effect element 101b is low. It passes through the first magnetoresistive effect element 101b in the impedance state and is easily output to the second port 109b, and is not near the spin torque resonance frequency of the first magnetoresistive effect element 101b in the high frequency component of the high frequency signal. The frequency component is less likely to be output to the second port 109b by the first magnetoresistive element 101b in the high impedance state.

  Further, due to the spin torque resonance phenomenon, the second magnetoresistive effect among the high frequency components of the high frequency signal (the high frequency signals that have passed through the two first magnetoresistive effect elements 101a and 101b) input from the first port 109a. A frequency component that matches or is close to the spin torque resonance frequency of the element 101c is less likely to be output to the second port 109b by the second magnetoresistive effect element 101c in the high impedance state. On the other hand, a frequency component that is not in the vicinity of the spin torque resonance frequency of the second magnetoresistive effect element 101c in the high frequency component of the high frequency signal passes through the second magnetoresistive effect element 101c in the low impedance state and passes through the second port. It becomes easy to output to 109b.

  FIG. 2 is a graph showing the relationship between the frequency of the high-frequency signal input to the magnetoresistive effect device 100 and the amount of attenuation. The vertical axis in FIG. 2 represents the attenuation amount, and the horizontal axis represents the frequency. The plot line 120 in FIG. 2 is a graph when the magnetic field applied to the first magnetoresistive effect elements 101a and 101b and the second magnetoresistive effect element 101c is constant and the applied DC current is constant. is there. fa is the spin torque resonance frequency of the first magnetoresistance effect element 101a, fb is the spin torque resonance frequency of the first magnetoresistance effect element 101b, and fc is the spin torque resonance of the second magnetoresistance effect element 101c. Is the frequency. In FIG. 2, the spin torque resonance frequency of the second magnetoresistance effect element 101c is lower than the spin torque resonance frequency of the first magnetoresistance effect element 101a and the spin torque resonance frequency of the first magnetoresistance effect element 101b. An example is shown.

  As indicated by the plot line 120 in FIG. 2, the band near the spin torque resonance frequency of the first magnetoresistive effect element 101a and the band near the spin torque resonance frequency of the first magnetoresistive effect element 101b are passbands. It becomes. Further, the second magnetoresistive effect element 101c causes the spin torque resonance frequency of the first magnetoresistive effect element 101a and the low torque side of the spin torque resonance frequency of the first magnetoresistive effect element 101b (the low passband is reduced). On the frequency side), the high-frequency signal can be blocked from the second port 109b. In the vicinity of the spin torque resonance frequency of the second magnetoresistance effect element 101c where the high-frequency signal is blocked, the ratio of the attenuation amount to the attenuation amount of the high-frequency signal in the pass band can be further increased. The shoulder characteristics on the low frequency side of the pass band formed in the vicinity of the spin torque resonance frequency of the resistance effect element 101a and in the vicinity of the spin torque resonance frequency of the first magnetoresistance effect element 101b can be made steep. That is, the magnetoresistive effect device 100 in this case functions as a band pass filter having a steep shoulder characteristic on the low frequency side of the pass band, as indicated by the plot line 120 in FIG. In this case, in the vicinity of the spin torque resonance frequency of the second magnetoresistive effect element 101c, since the change of the attenuation amount of the high frequency signal with respect to the frequency is steep, the spin torque resonance frequency of the second magnetoresistive effect element 101c is It is preferable to match the lower limit frequency of the pass band to be used.

  Similarly, when the spin torque resonance frequency of the second magnetoresistance effect element 101c is higher than the spin torque resonance frequency of the first magnetoresistance effect element 101a and the spin torque resonance frequency of the first magnetoresistance effect element 101b. The magnetoresistance effect device 100 functions as a band-pass filter having a steep shoulder characteristic on the high frequency side of the pass band. In this case, it is preferable to match the spin torque resonance frequency of the second magnetoresistive element 101c with the upper limit frequency of the pass band to be used.

  3 and 4 are graphs showing the relationship between the frequency of the high-frequency signal input to the magnetoresistive effect device 100 and the amount of attenuation. 3 and 4, the vertical axis represents attenuation, and the horizontal axis represents frequency. FIG. 3 is a graph when the magnetic fields applied to the two first magnetoresistive elements 101a and 101b and the second magnetoresistive element 101c are constant. A plot line 131 in FIG. 3 is obtained when the DC current value applied to the two first magnetoresistive elements 101a and 101b and the second magnetoresistive element 101c from the DC current input terminal 110 is Ia1. The plot line 132 is obtained when the DC current value applied from the DC current input terminal 110 to the two first magnetoresistive elements 101a and 101b and the second magnetoresistive element 101c is Ia2. The relation of the direct current value at this time is Ia1 <Ia2. FIG. 4 is a graph when the direct current applied to the two first magnetoresistive elements 101a and 101b and the second magnetoresistive element 101c is constant. A plot line 141 in FIG. 4 is obtained when the magnetic field intensity applied from the magnetic field application mechanism 111 to the two first magnetoresistive elements 101a and 101b and the second magnetoresistive element 101c is Hb1. A line 142 is obtained when the magnetic field strength applied from the magnetic field application mechanism 111 to the two first magnetoresistive elements 101a and 101b and the second magnetoresistive element 101c is Hb2. The relationship between the magnetic field strengths at this time is Hb1 <Hb2.

  For example, as shown in FIG. 3, the direct current value applied from the direct current input terminal 110 to the two first magnetoresistive elements 101a and 101b and the second magnetoresistive element 101c is increased from Ia1 to Ia2. In this case, the amount of change in element impedance at a frequency in the vicinity of the spin torque resonance frequency of the two first magnetoresistive elements 101a and 101b and the second magnetoresistive element 101c increases as the current value changes. Thus, the output from the second port 109b in the band near the spin torque resonance frequency of the first magnetoresistive effect element 101a and the band (pass band) near the spin torque resonance frequency of the first magnetoresistive effect element 101b. The high frequency signal to be generated is further increased, and the passage loss is reduced. At the same time, the high-frequency signal output from the second port 109b is further reduced in the band near the spin torque resonance frequency of the second magnetoresistance effect element 101c. Therefore, the magnetoresistive effect device 101 can realize a high-frequency filter having a large range of cut-off characteristics and pass characteristics and a steep shoulder characteristic. When the direct current value is increased from Ia1 to Ia2, the spin torque resonance frequency of the first magnetoresistance effect element 101a is changed from fd1 to fd2, and the spin torque resonance frequency of the first magnetoresistance effect element 101b is changed from fe1 to fe2. The spin torque resonance frequency of the second magnetoresistive element 101c is shifted from fg1 to fg2. That is, the pass band shifts to the low frequency side. That is, the magnetoresistive effect device 100 can also function as a high-frequency filter having a steep shoulder characteristic that can change the passband frequency.

Furthermore, for example, as shown in FIG. 4, when the magnetic field strength applied from the magnetic field application mechanism 111 is increased from Hb1 to Hb2, the spin torque resonance frequency of the first magnetoresistance effect element 101a is changed from fh1 to fh2. The spin torque resonance frequency of the first magnetoresistance effect element 101b is shifted from fi1 to fi2, and the spin torque resonance frequency of the second magnetoresistance effect element 101c is shifted from fj1 to fj2. That is, the pass band shifts to the high frequency side. Further, changing the magnetic field strength (effective magnetic field H _eff in the magnetization free layer 104) can shift the passband more greatly than changing the direct current value. That is, the magnetoresistive effect device 100 can function as a high frequency filter having a steep shoulder characteristic that can change the frequency of the pass band.

As the external magnetic field H _E applied to each magnetoresistive element (effective magnetic field H _eff in the magnetization free layer 104) increases, the amplitude of the resistance value that vibrates each magnetoresistive element decreases. As the external magnetic field H _E (effective magnetic field H _eff in the magnetization free layer 104) applied to the resistive element is increased, it is preferable to increase the current density of the direct current applied to each magnetoresistive element.

  Further, in the magnetoresistive effect device 100, the number of the first magnetoresistive effect elements may be one (one of the first magnetoresistive effect elements 101a and 101b).

  As described above, the magnetoresistive effect device 100 includes the two first magnetoresistive effect elements 101a and 101b, the second magnetoresistive effect element 101c, the first port 109a to which the high frequency signal is input, and the high frequency signal. Is output to the second port 109b, the signal line 107, and a direct current input terminal 110 (direct current application terminal). The first port 109a, the two first magnetoresistive elements 101a, 101b, And the second port 109b are connected in series via the signal line 107 in this order, and the first port 109a, the second magnetoresistive effect element 101c, and the second port 109b are connected in series via the signal line 107 in this order. The two first magnetoresistive elements 101a and 101b and the second magnetoresistive element 101c are composed of a fixed magnetization layer 102, a magnetization The first magnetoresistive effect element 101a (101b) and the second magnetoresistive effect element 101c each have one end side of a direct current input terminal 110 ( The first magnetoresistive effect element 101a is connected to the direct current input terminal 110 (direct current application terminal) and the reference potential terminal 114 so that the other end side becomes the reference potential terminal 114 side. (101b) and the second magnetoresistive effect element 101c, the relationship between the direction from one end side to the other end side and the direction from each magnetization free layer 104 to the magnetization fixed layer 102 is the first magnetic field. The resistance effect element 101a (101b) and the second magnetoresistance effect element 101c are formed so as to be reversed. Further, in the first magnetoresistance effect element 101a, a direct current input from the direct current input terminal 110 (DC application terminal) causes the first magnetoresistance effect element 101a to pass through the magnetization free layer 104 to the magnetization fixed layer 102. In the first magnetoresistive effect element 101b, the direct current input from the direct current input terminal 110 (direct current application terminal) is free from magnetization in the first magnetoresistive effect element 101b. The second magnetoresistive effect element 101c is formed so as to flow in the direction from the layer 104 to the magnetization fixed layer 102. The second magnetoresistive effect element 101c has a direct current input from the direct current input terminal 110 (direct current application terminal) as the second magnetoresistive effect. The element 101c is formed so as to flow in the direction from the magnetization fixed layer 102 to the magnetization free layer 104, and the spin torque resonance frequency of the first magnetoresistance effect element 101a and the second Spin torque resonance frequency of the magnetoresistive element 101c are different from each other, the spin torque resonance frequency of the spin torque resonance frequency and the second magnetoresistive element 101c of the first magnetoresistive element 101b are different from each other.

  Accordingly, when a high frequency signal is input to the two first magnetoresistive elements 101a and 101b and the second magnetoresistive element 101c from the first port 109a via the signal line 107, Spin torque resonance can be induced in the magnetoresistive effect elements 101a and 101b and the second magnetoresistive effect element 101c. Simultaneously with this spin torque resonance, a direct current flows in the direction from the magnetization free layer 104 to the magnetization fixed layer 102 in the two first magnetoresistance effect elements 101a and 101b, so that the first magnetoresistance effect element 101a has The element impedance of the first magnetoresistance effect element 101a with respect to the same frequency as the spin torque resonance frequency decreases, and the element of the first magnetoresistance effect element 101b with respect to the same frequency as the spin torque resonance frequency of the first magnetoresistance effect element 101b. Impedance decreases. Similarly, when a direct current flows in the direction from the magnetization fixed layer 102 to the magnetization free layer 104 in the second magnetoresistance effect element 101c simultaneously with the spin torque resonance, the spin torque of the second magnetoresistance effect element 101c is obtained. The element impedance of the second magnetoresistance effect element 101c with respect to the same frequency as the resonance frequency increases.

  The first port 109a and the two first magnetoresistive elements 101a and 101b are connected in series in this order, so that a high-frequency signal is non-resonant when the first magnetoresistive elements 101a and 101b are in a high impedance state. The second port 109b can be cut off at the frequency, and the first magnetoresistive element 101a, 101b can be passed to the second port 109b side at the resonance frequency where the impedance is low. Further, the first port 109a, the second magnetoresistive effect element 101c, and the second port 109b are connected in series in this order, so that the second magnetoresistive effect element 101c is in a high impedance state. At the resonance frequency, the second port 109b can be blocked, and at the non-resonance frequency where the second magnetoresistive element 101c is in a low impedance state, the second port 109b can be passed through. As described above, the magnetoresistive effect device 100 converts the high-frequency signal input from the first port 109a to a frequency in the vicinity of the spin torque resonance frequency of the first magnetoresistive effect element 101a and the first magnetoresistive effect element 101b. Can be passed to the second port 109b side at a frequency in the vicinity of the spin torque resonance frequency, and at a frequency in the vicinity of the spin torque resonance frequency of the second magnetoresistive effect element 101c, Can be blocked. That is, the magnetoresistive effect device 100 has a maximum value of the passing amount of the high-frequency signal at the spin torque resonance frequency of the first magnetoresistive effect element 101a and the spin torque resonance frequency of the first magnetoresistive effect element 101b. The magnetoresistive effect element 101c has a minimum value of the passing amount of the high frequency signal at the spin torque resonance frequency, and functions as a high frequency filter.

  In the magnetoresistance effect device 100, the band near the spin torque resonance frequency of the first magnetoresistance effect element 101a or the band near the spin torque resonance frequency of the first magnetoresistance effect element 101b is a pass band. Since the spin torque resonance frequency of the first magnetoresistance effect element 101a and the spin torque resonance frequency of the second magnetoresistance effect element 101c are different from each other (the spin torque resonance frequency of the second magnetoresistance effect element 101c is the first Since the spin torque resonance frequency of the magnetoresistive effect element 101a is higher or lower than the spin torque resonance frequency of the first magnetoresistive effect element 101a, a high frequency signal is sent to the second port 109b on the high frequency side or low frequency side of the spin torque resonance frequency of the first magnetoresistive effect element 101a. It can be blocked. In addition, since the spin torque resonance frequency of the first magnetoresistance effect element 101b and the spin torque resonance frequency of the second magnetoresistance effect element 101c are different from each other (the spin torque resonance frequency of the second magnetoresistance effect element 101c is The high frequency signal is sent to the second port on the high frequency side or low frequency side of the spin torque resonance frequency of the first magnetoresistive effect element 101b (because it is higher or lower than the spin torque resonance frequency of the first magnetoresistive effect element 101b). 109b can be blocked. In the vicinity of the spin torque resonance frequency of the second magnetoresistance effect element 101c where the high-frequency signal is blocked, the ratio of the attenuation amount to the attenuation amount of the high-frequency signal in the pass band can be further increased. The shoulder characteristics on the high frequency side or low frequency side of the pass band formed in the vicinity of the spin torque resonance frequency of the resistive effect element 101a or in the vicinity of the spin torque resonance frequency of the first magnetoresistive effect element 101b may be steep. It becomes possible. That is, the magnetoresistive effect device 100 can function as a band pass filter having a steep shoulder characteristic on the high frequency side or low frequency side of the pass band.

  Furthermore, the magnetoresistive effect device 100 has two first magnetoresistive elements 101a and 101b having different spin torque resonance frequencies, and the second magnetoresistive element 101c has two spin torque resonance frequencies. One magnetoresistive effect element 101a, 101b is higher than the spin torque resonance frequency of each of the first magnetoresistive effect elements 101a, 101b or lower than the spin torque resonance frequency of each of the two first magnetoresistive effect elements 101a, 101b. It becomes possible to function as a band-pass filter having a steep shoulder characteristic on the high frequency side or low frequency side of the band.

  Furthermore, in order to increase the range of the cut-off characteristics and the pass characteristics and make the shoulder characteristics steep, the magnetization free layer 104 has a magnetization easy axis in the film surface normal direction, and the magnetization fixed layer 102 is magnetized in the film surface direction. A configuration having an easy axis is preferable.

  Further, by changing the direct current applied from the direct current input terminal 110, the spin torque resonance frequencies of the two first magnetoresistive elements 101a and 101b and the second magnetoresistive element 101c are variably controlled. Therefore, the magnetoresistive effect device 100 can also function as a frequency variable filter.

  Furthermore, the magnetoresistive effect device 100 has a magnetic field application mechanism 111 as a frequency setting mechanism capable of setting the spin torque resonance frequency of the two first magnetoresistive effect elements 101a and 101b and the second magnetoresistive effect element 101c. Therefore, the spin torque resonance frequencies of the two first magnetoresistive elements 101a and 101b and the second magnetoresistive element 101c can be set to arbitrary frequencies. Therefore, the magnetoresistive effect device 100 can function as a filter of an arbitrary frequency band.

  Furthermore, the magnetoresistive effect device 100 is an effective magnetic field setting mechanism in which the magnetic field application mechanism 111 can set an effective magnetic field in the magnetization free layer 104. The effective magnetic field in the magnetization free layer 104 is changed to change the two first magnetic fields. Since the spin torque resonance frequency of the resistance effect elements 101a and 101b and the second magnetoresistance effect element 101c can be changed, it can function as a frequency variable filter.

  In the above description, the example in which the two first magnetoresistive elements 101a and 101b are connected in series to each other has been described. However, the number of the first magnetoresistive elements may be three or more. A plurality of first magnetoresistive elements may be connected in parallel to each other. Even in the magnetoresistive effect device in these cases, the first port 109a, each of the first magnetoresistive effect element and the second port 109b are connected in series via the signal line 107 in this order, Similar to the magnetoresistive effect device 100, it can have a frequency characteristic as a high frequency filter.

  In the above description, the two first magnetoresistive elements 101a and 101b and the second magnetoresistive element 101c have been described as being connected in series. At least one of the effect elements 101a and 101b and the second magnetoresistance effect element 101c may be connected in parallel to each other.

  Further, the magnetoresistive effect device 100 has the spin torque resonance frequency of the first magnetoresistive effect element 101a and the first magnetoresistive effect element when the direct current input from the direct current input terminal 110 is greater than a certain level. At the spin torque resonance frequency of 101b, the output power output from the second port 109b is made larger than the input power of the high-frequency signal input from the first port 109a (the attenuation amount is set to 0 dB or more). I can do it. That is, the magnetoresistive effect device 100 can also function as an amplifier (amplifier).

(Second Embodiment)
FIG. 5 is a schematic cross-sectional view of a magnetoresistive effect device 200 according to the second embodiment of the present invention. In the magnetoresistive effect device 200, differences from the magnetoresistive effect device 100 of the first embodiment will be mainly described, and description of common matters will be omitted as appropriate. Elements common to the magnetoresistive effect device 100 of the first embodiment are denoted by the same reference numerals, and description of the common elements is omitted. The magnetoresistive effect device 200 further includes a third magnetoresistive effect element 101d with respect to the magnetoresistive effect device 100 of the first embodiment. The third magnetoresistance effect element 101d includes a magnetization fixed layer 102 (third magnetization fixed layer), a magnetization free layer 104 (third magnetization free layer), and a spacer layer 103 (third Spacer layer). The first port 109a, the third magnetoresistance effect element 101d, and the second port 109b are connected in series via the signal line 107 in this order. More specifically, the first magnetoresistive effect element 101a and the third magnetoresistive effect element 101d are connected in series, and the first magnetoresistive effect element 101b and the third magnetoresistive effect element 101d are connected in series. The second magnetoresistive element 101c and the third magnetoresistive element 101d are connected in series with each other.

  The third magnetoresistive element 101d has one end side (in this example, the magnetization fixed layer 102 side) at the DC current input terminal 110 side and the other end side (in this example, the magnetization free layer 104 side) at the reference potential terminal. The DC current input terminal 110 and the reference potential terminal 114 are connected so as to be on the 114 side. That is, in the magnetoresistive effect device 200, the second magnetoresistive effect element 101c and the third magnetoresistive effect element 101d are fixed in the direction from the respective one end side to the other end side and from the respective magnetization free layers 104. The second magnetoresistive effect element 101c and the third magnetoresistive effect element 101d are formed to have the same relationship with the direction to the layer 102. In this example, the direction from one end side to the other end side of each of the second magnetoresistive effect element 101c and the third magnetoresistive effect element 101d, and the direction from each magnetization free layer 104 to the magnetization fixed layer 102, However, both the second magnetoresistive effect element 101c and the third magnetoresistive effect element 101d are in a reverse relationship.

  The third magnetoresistive element 101d is formed such that a direct current input from the direct current input terminal 110 flows in the third magnetoresistive element 101d in the direction from the fixed magnetization layer 102 to the free magnetization layer 104. Has been. That is, in the magnetoresistive effect device 200, the direction of the direct current flowing through each of the second magnetoresistive effect element 101c and the third magnetoresistive effect element 101d, the respective magnetization fixed layer 102, the spacer layer 103, and the magnetization The relationship with the arrangement order of the free layer 104 is the same between the second magnetoresistive element 101c and the third magnetoresistive element 101d. Furthermore, the spin torque resonance frequency of the second magnetoresistive effect element 101c is higher than the spin torque resonance frequency of each of the two first magnetoresistive effect elements 101a and 101b, and the spin torque of the third magnetoresistive effect element 101d. The torque resonance frequency is lower than the spin torque resonance frequency of each of the two first magnetoresistive elements 101a and 101b.

  The high-frequency signal input from the first port 109a passes through the two first magnetoresistive elements 101a and 101b, the second magnetoresistive element 101c, and the third magnetoresistive element 101d, and then the second Output to the port 109b.

  One end (the magnetization fixed layer 102 side) of the third magnetoresistance effect element 101d is electrically connected to the signal line 107 (second magnetoresistance effect element 101c) via the lower electrode 106, and the other end (magnetization free). The layer 104 side) is electrically connected to the signal line 107 (second port 109b) via the upper electrode 105.

  The inductor 113 includes two signal lines 107 (first first magnetoresistive effect elements 101a, 101b, second magnetoresistive effect element 101c, third magnetoresistive effect element 101d, and second port 109b). Magnetoresistive effect elements 101a and 101b, second magnetoresistive effect element 101c and third magnetoresistive effect element 101d and signal line 107 between first port 109a, or first magnetoresistive effect element 101a, 101b, the second magnetoresistive element 101c and the signal line 107 between the third magnetoresistive element 101d and the second port 109b), and further connected to the reference potential terminal 114 for reference potential The terminal 108 can be connected to the ground 108. The DC current input terminal 110 has a signal line 107 between the two first magnetoresistive elements 101a and 101b, the second magnetoresistive element 101c, the third magnetoresistive element 101d, and the first port 109a. (The first magnetoresistance effect elements 101a and 101b, the second magnetoresistance effect element 101c, the signal line 107 between the third magnetoresistance effect element 101d and the first port 109a, or the first magnetoresistance effect The other of the signal lines 107 between the elements 101a and 101b, the second magnetoresistive effect element 101c and the third magnetoresistive effect element 101d and the second port 109b) is connected. By connecting a direct current source 112 to the direct current input terminal 110, a direct current is applied to the two first magnetoresistive elements 101a, 101b, the second magnetoresistive element 101c, and the third magnetoresistive element 101d. Can be applied.

  The direct current source 112 is connected to the ground 108 and the direct current input terminal 110, and is connected to two first magnetoresistive elements 101a and 101b, a signal line 107, a second magnetoresistive element 101c, and a third magnetoresistive effect. A closed circuit including the element 101d, the ground 108, and the direct current input terminal 110 is formed. The direct current source 112 applies a direct current from the direct current input terminal 110 to the closed circuit.

  The inductor 113 is connected between the signal line 107 and the ground 108 and has a function of cutting the high frequency component of the current by the inductor component and simultaneously passing the current invariant component. The inductor 113 may be either a chip inductor or an inductor using a pattern line. Also, a resistance element having an inductor component may be used. The inductance value of the inductor 113 is preferably 10 nH or more. This inductor 113 allows the two magnetoresistive elements 101a and 101b, the second magnetoresistive element 101c, and the third magnetoresistive element 101d to pass through the two without deteriorating the characteristics of the high-frequency signal. In a closed circuit including the first magnetoresistive effect elements 101a and 101b, the second magnetoresistive effect element 101c, the third magnetoresistive effect element 101d, the signal line 107, the inductor 113, the ground 108, and the direct current input terminal 110, A direct current applied from the direct current input terminal 110 can flow.

  The magnetic field application mechanism 111 is disposed in the vicinity of the two first magnetoresistive elements 101a and 101b, the second magnetoresistive element 101c, and the third magnetoresistive element 101d. By applying a magnetic field to the effect elements 101a and 101b, the second magnetoresistive effect element 101c, and the third magnetoresistive effect element 101d, the spin torque resonance frequency of each magnetoresistive effect element can be set.

  Other configurations of the magnetoresistive effect device 200 are the same as those of the magnetoresistive effect device 100 of the first embodiment.

  In the magnetoresistive effect device 200, the third magnetoresistive effect element 101 d has a direct current input from the direct current input terminal 110 so that the third magnetoresistive effect element 101 d passes through the third magnetoresistive effect element 101 d from the magnetization fixed layer 102 to the magnetization free layer 104. Thus, like the second magnetoresistive effect element 101c, it can be handled as a resistance element in which the impedance of the high frequency signal increases at the spin torque resonance frequency due to the spin torque resonance phenomenon.

  Among the high frequency components of the high frequency signals (high frequency signals that have passed through the two first magnetoresistive elements 101a and 101b and the second magnetoresistive element 101c) input from the first port 109a due to the spin torque resonance phenomenon Thus, a frequency component that matches or is close to the spin torque resonance frequency of the third magnetoresistive effect element 101d is transferred to the second port 109b by the third magnetoresistive effect element 101d in the high impedance state. It becomes difficult to output. On the other hand, a frequency component that is not in the vicinity of the spin torque resonance frequency of the third magnetoresistive effect element 101d in the high frequency component of the high frequency signal passes through the third magnetoresistive effect element 101d in the low impedance state and passes through the second port. It becomes easy to output to 109b.

  FIG. 6 is a graph showing the relationship between the frequency of the high-frequency signal input to the magnetoresistive device 200 and the amount of attenuation. In FIG. 6, the vertical axis represents attenuation, and the horizontal axis represents frequency. The plot line 220 in FIG. 6 indicates that the magnetic field applied to the two first magnetoresistive elements 101a and 101b, the second magnetoresistive element 101c, and the third magnetoresistive element 101d is constant and applied. It is a graph when the direct current made is constant. fa is the spin torque resonance frequency of the first magnetoresistive effect element 101a, fb is the spin torque resonance frequency of the first magnetoresistive effect element 101b, and fc is the spin torque resonance of the second magnetoresistive effect element 101c. Frequency, and fe is the spin torque resonance frequency of the third magnetoresistive element 101d.

  As indicated by the plot line 220 in FIG. 6, the band near the spin torque resonance frequency of the first magnetoresistance effect element 101a and the band near the spin torque resonance frequency of the first magnetoresistance effect element 101b are passbands. It becomes. Further, the second magnetoresistive effect element 101c causes the spin torque resonance frequency of the first magnetoresistive effect element 101a and the high frequency side of the spin torque resonance frequency of the first magnetoresistive effect element 101b (the above-described high pass band). On the frequency side), the high-frequency signal can be blocked from the second port 109b. In the vicinity of the spin torque resonance frequency of the second magnetoresistance effect element 101c where the high-frequency signal is blocked, the ratio of the attenuation amount to the attenuation amount of the high-frequency signal in the pass band can be further increased. The shoulder characteristics on the high frequency side of the pass band formed in the vicinity of the spin torque resonance frequency of the resistance effect element 101a and in the vicinity of the spin torque resonance frequency of the first magnetoresistance effect element 101b can be made steep. Further, the third magnetoresistive effect element 101d allows the spin torque resonance frequency of the first magnetoresistive effect element 101a and the spin torque resonance frequency of the first magnetoresistive effect element 101b to be on the low frequency side (the above-mentioned low pass band). On the frequency side), the high-frequency signal can be blocked from the second port 109b. In the vicinity of the spin torque resonance frequency of the third magnetoresistive effect element 101d where the high-frequency signal is blocked, the ratio of the attenuation amount to the attenuation amount of the high-frequency signal in the pass band can be further increased. The shoulder characteristics on the low frequency side of the pass band formed in the vicinity of the spin torque resonance frequency of the resistance effect element 101a and in the vicinity of the spin torque resonance frequency of the first magnetoresistance effect element 101b can be made steep. That is, the magnetoresistive effect device 200 functions as a band pass filter having steep shoulder characteristics on both the low frequency side and the high frequency side of the pass band, as indicated by the plot line 220 in FIG. In this case, in the vicinity of the spin torque resonance frequency of the second magnetoresistive effect element 101c and in the vicinity of the spin torque resonance frequency of the third magnetoresistive effect element 101d, the change of the attenuation amount of the high frequency signal with respect to the frequency is steep. Therefore, the spin torque resonance frequency of the second magnetoresistive effect element 101c is matched with the upper limit frequency of the pass band to be used, and the spin torque resonance frequency of the third magnetoresistive effect element 101d is set to the lower limit frequency of the pass band to be used. It is preferable to match.

  Further, in the magnetoresistive effect device 200, the first magnetoresistive effect element may be one (one of the first magnetoresistive effect elements 101a and 101b).

  As described above, the magnetoresistance effect device 200 further includes the third magnetoresistance effect element 101d with respect to the magnetoresistance effect device 100, and the first port 109a, the third magnetoresistance effect element 101d, and the second magnetoresistance effect element 101d. The port 109b is connected in series via the signal line 107 in this order, and the two first magnetoresistive elements 101a and 101b, the second magnetoresistive element 101c, and the third magnetoresistive element 101d are fixed in magnetization. Layer 102, magnetization free layer 104, and spacer layer 103 disposed between them, and third magnetoresistive element 101d has one end thereof on the DC current input terminal 110 (DC application terminal) side, and the others Connected to the DC current input terminal 110 (DC application terminal) and the reference potential terminal 114 so that the end side is the reference potential terminal 114 side. The second magnetoresistive element 101c and the third magnetoresistive element 101d have a relationship between the direction from one end side to the other end side and the direction from the magnetization free layer 104 to the magnetization fixed layer 102, respectively. Are formed to be the same in the second magnetoresistive element 101c and the third magnetoresistive element 101d. Further, in the third magnetoresistive effect element 101d, a direct current input from the direct current input terminal 110 (DC application terminal) causes the third magnetoresistive effect element 101d to pass through the magnetization fixed layer 102 to the magnetization free layer 104. The spin torque resonance frequency of the second magnetoresistive effect element 101c is higher than the spin torque resonance frequency of the first magnetoresistive effect element 101a, and the third magnetoresistive effect element 101d The spin torque resonance frequency is lower than the spin torque resonance frequency of the first magnetoresistance effect element 101a, and the spin torque resonance frequency of the second magnetoresistance effect element 101c is that of the first magnetoresistance effect element 101b. The spin torque resonance frequency of the third magnetoresistive element 101d is higher than the spin torque resonance frequency. It is lower than the spin torque resonance frequency of 101b.

  Therefore, when a high frequency signal is input to the third magnetoresistance effect element 101d from the first port 109a via the signal line 107, spin torque resonance can be induced in the third magnetoresistance effect element 101d. . Simultaneously with this spin torque resonance, a direct current flows in the direction from the magnetization fixed layer 102 to the magnetization free layer 104 in the third magnetoresistive effect element 101d, whereby the spin torque resonance frequency of the third magnetoresistive effect element 101d. The element impedance of the third magnetoresistive effect element 101d for the same frequency increases.

  The first port 109a, the third magnetoresistive effect element 101d, and the second port 109b are connected in series in this order, so that a high frequency signal can be received and a resonance frequency at which the third magnetoresistive effect element 101d is in a high impedance state. Then, the second port 109b can be blocked, and the third magnetoresistive element 101d can pass through the second port 109b at a non-resonant frequency in a low impedance state.

  The spin torque resonance frequency of the second magnetoresistance effect element 101c is higher than the spin torque resonance frequency of the first magnetoresistance effect element 101a, and the spin torque resonance frequency of the third magnetoresistance effect element 101d is the first magnetic resistance. Since it is lower than the spin torque resonance frequency of the resistive effect element 101a, the high frequency signal can be blocked from the second port on the high frequency side and the low frequency side of the spin torque resonance frequency of the first magnetoresistive effect element 101a. it can. The spin torque resonance frequency of the second magnetoresistive effect element 101c is higher than the spin torque resonance frequency of the first magnetoresistive effect element 101b, and the spin torque resonance frequency of the third magnetoresistive effect element 101d is the first. Since this is lower than the spin torque resonance frequency of the magnetoresistive effect element 101b, the high frequency signal is blocked from the second port on the high frequency side and the low frequency side of the spin torque resonance frequency of the first magnetoresistive effect element 101b. be able to. In the vicinity of the spin torque resonance frequency of the second magnetoresistive effect element 101c and the vicinity of the spin torque resonance frequency of the third magnetoresistive effect element 101d where the high frequency signal is cut off, the attenuation with respect to the attenuation amount of the high frequency signal in the pass band. Since the ratio of the amounts can be further increased, the pass band formed in the vicinity of the spin torque resonance frequency of the first magnetoresistance effect element 101a or in the vicinity of the spin torque resonance frequency of the first magnetoresistance effect element 101b is reduced. The shoulder characteristics on both the high frequency side and the low frequency side can be made steep. That is, the magnetoresistive effect device 200 can function as a band pass filter having steep shoulder characteristics on both the high frequency side and the low frequency side of the pass band.

  Further, since the magnetoresistive effect device 200 includes the two first magnetoresistive effect elements 101a and 101b having different spin torque resonance frequencies, the magnetoresistive effect device 200 has a wide pass band and the spin torque resonance of the second magnetoresistive effect element 101c. The frequency is higher than the spin torque resonance frequency of each of the two first magnetoresistance effect elements 101a and 101b, and the spin torque resonance frequency of the third magnetoresistance effect element 101d is two first magnetoresistance effect elements. Since it is lower than the spin torque resonance frequency of each of 101a and 101b, it can function as a band pass filter having steep shoulder characteristics on both the high frequency side and low frequency side of the pass band.

  In the above description, the example in which the two first magnetoresistive elements 101a and 101b are connected in series to each other has been described. However, the number of the first magnetoresistive elements may be three or more. A plurality of first magnetoresistive elements may be connected in parallel to each other. Even in the magnetoresistive effect device in these cases, the first port 109a, each of the first magnetoresistive effect element and the second port 109b are connected in series via the signal line 107 in this order, Similar to the magnetoresistive effect device 200, it can have frequency characteristics as a high frequency filter.

  In the above description, the second magnetoresistive effect element 101c and the third magnetoresistive effect element 101d are described as being connected in series. However, the second magnetoresistive effect element 101c and the third magnetoresistive effect element 101c The magnetoresistive effect elements 101d may be connected in parallel to each other. Even in the magnetoresistive effect device in this case, the first port 109a, the second magnetoresistive effect element 101c, and the second port 109b are connected in series via the signal line 107 in this order, and the first port 109a The third magnetoresistive effect element 101d and the second port 109b are connected in series via the signal line 107 in this order, so that the third magnetoresistive effect element 101d and the second port 109b have frequency characteristics as a high frequency filter similar to the magnetoresistive effect device 200. it can.

  In the above description, the two first magnetoresistance effect elements 101a and 101b connected in series with each other, and the second magnetoresistance effect element 101c and the third magnetoresistance effect element 101d connected in series with each other. Are connected in series with each other, but at least one of the two first magnetoresistive elements 101a and 101b, the second magnetoresistive element 101c, and the third magnetoresistive element 101d. May be connected in parallel with each other.

In the magnetoresistive effect device 100 of the first embodiment and the magnetoresistive effect device 200 of the second embodiment, in order to further widen the pass band and make the shoulder characteristics steep, the second magnetism that makes the shoulder characteristics steep. The Q value of the resistance effect element 101c (third magnetoresistance effect element 101d) is larger than the Q value of at least one of the first magnetoresistance effect element 101a and the first magnetoresistance effect element 101b forming the pass band. It is preferable to do. Here, the Q value means that the absolute value of the impedance of the magnetoresistive effect element is decreased or increased by 3 dB from the absolute value of the impedance at the spin torque resonance frequency f0 of the magnetoresistive effect element. Using f1 <f2)
Q = f0 / (f2-f1)
It is represented by Since the Q value of the magnetoresistive effect element at the time of spin torque resonance is proportional to the current density of the direct current applied to the magnetoresistive effect element, for example, the first magnetoresistive effect element 101a and the first magnetoresistive effect element 101b, the second magnetoresistive effect element 101c, and the third magnetoresistive effect element 101d have the same film configuration and area in plan view, the first magnetoresistive effect element 101a and the first magnetoresistive effect element 101a The magnetoresistive effect element 101b is connected in series with each other, and the first magnetoresistive effect element 101a, 101b, the second magnetoresistive effect element 101c, and the third magnetoresistive effect element 101d are connected in parallel to each other. Q value of the second magnetoresistive effect element 101c (third magnetoresistive effect element 101d), the Q value of the first magnetoresistive effect element 101a and the first magnetoresistive effect element It can be larger than the Q value of 01b. Further, for example, when the first magnetoresistance effect element 101a, the first magnetoresistance effect element 101b, the second magnetoresistance effect element 101c, and the third magnetoresistance effect element 101d are connected in series with each other. By making the area of the second magnetoresistive element 101c in plan view smaller than the area of the first magnetoresistive element 101a (first magnetoresistive element 101b) in plan view, The Q value of the magnetoresistive effect element 101c can be made larger than the Q value of the first magnetoresistive effect element 101a (first magnetoresistive effect element 101b), and the plane of the third magnetoresistive effect element 101d By making the area of the view shape smaller than the area of the plan view shape of the first magnetoresistive effect element 101a (first magnetoresistive effect element 101b), the third magnetoresistive effect element 10 The Q value of d, can be made larger than the Q value of the first magnetoresistance effect element 101a (first magnetoresistive element 101b).

(Third embodiment)
FIG. 7 is a schematic cross-sectional view of a magnetoresistive effect device 300 according to the third embodiment of the present invention. The magnetoresistive effect device 300 will be described mainly with respect to differences from the magnetoresistive effect device 100 of the first embodiment, and description of common matters will be omitted as appropriate. Elements common to the magnetoresistive effect device 100 of the first embodiment are denoted by the same reference numerals, and description of the common elements is omitted. The magnetoresistive effect device 300 is different from the magnetoresistive effect device 100 of the first embodiment in the direction of the direct current flowing through the two first magnetoresistive effect elements 101a and 101b and the second magnetoresistive effect element 101c. The direction of the direct current that flows through is different. In the magnetoresistive effect device 300, in the first magnetoresistive effect element 101a, a direct current input from the direct current input terminal 110 causes the first magnetoresistive effect element 101a to pass through the magnetization fixed layer 102 and the magnetization free layer 104. It is formed to flow in the direction of. The first magnetoresistance effect element 101b is formed such that a direct current input from the direct current input terminal 110 flows in the first magnetoresistance effect element 101b in the direction from the magnetization fixed layer 102 to the magnetization free layer 104. Has been. The second magnetoresistive effect element 101c is formed so that a direct current input from the direct current input terminal 110 flows in the first magnetoresistive effect element 101c in the direction from the magnetization free layer 104 to the magnetization fixed layer 102. Has been. That is, in the magnetoresistive effect device 300, the direction of the direct current flowing through each of the first magnetoresistive effect element 101a, the first magnetoresistive effect element 101b, and the second magnetoresistive effect element 101c, and the respective magnetizations. The relationship between the arrangement order of the fixed layer 102, the spacer layer 103, and the magnetization free layer 104 is reversed between the two first magnetoresistive elements 101a and 101b and the second magnetoresistive element 101c. Other configurations of the magnetoresistive effect device 300 are the same as those of the magnetoresistive effect device 100 of the first embodiment.

  A high-frequency signal having the same frequency as the spin torque resonance frequency is applied to each magnetoresistive effect element while applying a direct current flowing through each magnetoresistive effect element in the direction from the magnetization fixed layer 102 to the magnetization free layer 104 to each magnetoresistive effect element. When each of the magnetoresistive effect elements is input, the resistance value periodically changes at the spin torque resonance frequency in a state in which the phase differs from the input high frequency signal by 180 °, and the impedance to the high frequency signal increases. That is, in the magnetoresistive effect device 300, the two first magnetoresistive elements 101a and 101b can be handled as resistance elements in which the impedance of the high-frequency signal increases at the spin torque resonance frequency due to the spin torque resonance phenomenon.

  Further, while applying a direct current flowing through each magnetoresistive effect element from the magnetization free layer 104 to the magnetization fixed layer 102 to each magnetoresistive effect element, each magnetoresistive effect element has the same frequency as the spin torque resonance frequency. When a high frequency signal is input, the resistance value of each magnetoresistive element changes periodically at the spin torque resonance frequency in the same phase as the input high frequency signal, and the impedance to the high frequency signal decreases. That is, in the magnetoresistive effect device 300, the second magnetoresistive effect element 101c can be handled as a resistance element in which the impedance of the high frequency signal decreases at the spin torque resonance frequency due to the spin torque resonance phenomenon.

  Due to the spin torque resonance phenomenon, among the high frequency components of the high frequency signal input from the first port 109a, the frequency components that coincide with the spin torque resonance frequency of the first magnetoresistive effect element 101a or in the vicinity of the spin torque resonance frequency. Is less likely to be output to the second port 109b by the first magnetoresistive element 101a in the high impedance state. On the other hand, a frequency component that is not in the vicinity of the spin torque resonance frequency of the first magnetoresistive effect element 101a in the high frequency component of the high frequency signal passes through the first magnetoresistive effect element 101a in the low impedance state and passes through the second port. It becomes easy to output to 109b. Similarly, among the high-frequency components of the high-frequency signal input from the first port 109a, the frequency component that matches or is close to the spin torque resonance frequency of the first magnetoresistive effect element 101b is high. The first magnetoresistive element 101b in the impedance state is less likely to be output to the second port 109b, and is a frequency component that is not in the vicinity of the spin torque resonance frequency of the first magnetoresistive element 101b among the high frequency components of the high frequency signal. Is likely to pass through the first magnetoresistive element 101b in the low impedance state and output to the second port 109b.

  Further, due to the spin torque resonance phenomenon, the second magnetoresistive effect among the high frequency components of the high frequency signal (the high frequency signals that have passed through the two first magnetoresistive effect elements 101a and 101b) input from the first port 109a. A frequency component that matches or is close to the spin torque resonance frequency of the element 101c easily passes through the second magnetoresistive effect element 101c in the low impedance state and is easily output to the second port 109b. On the other hand, a frequency component that is not in the vicinity of the spin torque resonance frequency of the second magnetoresistive effect element 101c in the high frequency component of the high frequency signal is transferred to the second port 109b by the second magnetoresistive effect element 101c in the high impedance state. It becomes difficult to output.

  FIG. 8 is a graph showing the relationship between the frequency of the high-frequency signal input to the magnetoresistive device 300 and the amount of attenuation. In FIG. 8, the vertical axis represents attenuation, and the horizontal axis represents frequency. The plot line 320 of FIG. 8 is a graph when the magnetic field applied to the first magnetoresistive effect elements 101a and 101b and the second magnetoresistive effect element 101c is constant and the applied DC current is constant. is there. fa is the spin torque resonance frequency of the first magnetoresistance effect element 101a, fb is the spin torque resonance frequency of the first magnetoresistance effect element 101b, and fc is the spin torque resonance of the second magnetoresistance effect element 101c. Is the frequency. In FIG. 8, the spin torque resonance frequency of the second magnetoresistance effect element 101c is lower than the spin torque resonance frequency of the first magnetoresistance effect element 101a and the spin torque resonance frequency of the first magnetoresistance effect element 101b. An example is shown.

  As indicated by the plot line 320 in FIG. 8, the band near the spin torque resonance frequency of the first magnetoresistive effect element 101a and the band near the spin torque resonance frequency of the first magnetoresistive effect element 101b are cut off bands. It becomes. Further, the second magnetoresistive effect element 101c causes the spin torque resonance frequency of the first magnetoresistive effect element 101a and the low frequency side of the spin torque resonance frequency of the first magnetoresistive effect element 101b (the lower of the above-mentioned cutoff band). On the frequency side), a high-frequency signal can be passed to the second port 109b side. In the vicinity of the spin torque resonance frequency of the second magnetoresistive effect element 101c through which the high-frequency signal passes, the ratio of the attenuation amount to the attenuation amount of the high-frequency signal in the cutoff band can be further reduced. The shoulder characteristics on the low frequency side of the cutoff band formed in the vicinity of the spin torque resonance frequency of the effect element 101a and in the vicinity of the spin torque resonance frequency of the first magnetoresistance effect element 101b can be made steep. That is, the magnetoresistive effect device 300 in this case functions as a band cutoff filter having a steep shoulder characteristic on the low frequency side of the cutoff band, as indicated by a plot line 320 in FIG. In this case, in the vicinity of the spin torque resonance frequency of the second magnetoresistive effect element 101c, since the change of the attenuation amount of the high frequency signal with respect to the frequency is steep, the spin torque resonance frequency of the second magnetoresistive effect element 101c is It is preferable to match the lower limit frequency of the cutoff band to be used.

  Similarly, when the spin torque resonance frequency of the second magnetoresistance effect element 101c is higher than the spin torque resonance frequency of the first magnetoresistance effect element 101a and the spin torque resonance frequency of the first magnetoresistance effect element 101b. The magnetoresistive effect device 300 functions as a band cutoff filter having a steep shoulder characteristic on the high frequency side of the cutoff band. In this case, it is preferable to match the spin torque resonance frequency of the second magnetoresistive element 101c with the upper limit frequency of the cutoff band to be used.

  9 and 10 are graphs showing the relationship between the frequency of the high-frequency signal input to the magnetoresistive effect device 300 and the amount of attenuation. 9 and 10, the vertical axis represents attenuation, and the horizontal axis represents frequency. FIG. 9 is a graph when the magnetic fields applied to the two first magnetoresistive elements 101a and 101b and the second magnetoresistive element 101c are constant. A plot line 331 in FIG. 9 is obtained when the DC current value applied to the two first magnetoresistive elements 101a and 101b and the second magnetoresistive element 101c from the DC current input terminal 110 is Ia1. The plot line 332 is obtained when the direct current value applied from the direct current input terminal 110 to the two first magnetoresistive elements 101a and 101b and the second magnetoresistive element 101c is Ia2. The relation of the direct current value at this time is Ia1 <Ia2. FIG. 10 is a graph when the direct current applied to the two first magnetoresistive elements 101a and 101b and the second magnetoresistive element 101c is constant. A plot line 341 in FIG. 10 is obtained when the magnetic field intensity applied from the magnetic field application mechanism 111 to the two first magnetoresistive elements 101a and 101b and the second magnetoresistive element 101c is Hb1. A line 342 is obtained when the magnetic field strength applied from the magnetic field application mechanism 111 to the two first magnetoresistive elements 101a and 101b and the second magnetoresistive element 101c is Hb2. The relationship between the magnetic field strengths at this time is Hb1 <Hb2.

  For example, as shown in FIG. 9, the direct current value applied from the direct current input terminal 110 to the two first magnetoresistive elements 101a and 101b and the second magnetoresistive element 101c is increased from Ia1 to Ia2. In this case, the amount of change in element impedance at a frequency in the vicinity of the spin torque resonance frequency of the two first magnetoresistive elements 101a and 101b and the second magnetoresistive element 101c increases as the current value changes. Thus, the output from the second port 109b in the band near the spin torque resonance frequency of the first magnetoresistive effect element 101a and the band near the spin torque resonance frequency of the first magnetoresistive effect element 101b (cutoff band). The high frequency signal that is generated is further reduced, and the passage loss is increased. At the same time, the high-frequency signal output from the second port 109b further increases in the band near the spin torque resonance frequency of the second magnetoresistive element 101c. Therefore, the magnetoresistive effect device 600 can realize a high-frequency filter having a large range of cutoff characteristics and pass characteristics and a steep shoulder characteristic. When the direct current value is increased from Ia1 to Ia2, the spin torque resonance frequency of the first magnetoresistance effect element 101a is changed from fd1 to fd2, and the spin torque resonance frequency of the first magnetoresistance effect element 101b is changed from fe1 to fe2. The spin torque resonance frequency of the second magnetoresistive element 101c is shifted from fg1 to fg2. That is, the cutoff band shifts to the low frequency side. That is, the magnetoresistive effect device 300 can also function as a high frequency filter having a steep shoulder characteristic that can change the frequency of the cutoff band.

Furthermore, for example, as shown in FIG. 10, when the magnetic field strength applied from the magnetic field application mechanism 111 is increased from Hb1 to Hb2, the spin torque resonance frequency of the first magnetoresistance effect element 101a is changed from fh1 to fh2. The spin torque resonance frequency of the first magnetoresistance effect element 101b is shifted from fi1 to fi2, and the spin torque resonance frequency of the second magnetoresistance effect element 101c is shifted from fj1 to fj2. That is, the cutoff band shifts to the high frequency side. Also, changing the magnetic field strength (effective magnetic field H _eff in the magnetization free layer 104) can shift the cutoff band more greatly than changing the direct current value. That is, the magnetoresistive effect device 300 can function as a high frequency filter having a steep shoulder characteristic that can change the frequency of the cutoff band.

As the external magnetic field H _E applied to each magnetoresistive element (effective magnetic field H _eff in the magnetization free layer 104) increases, the amplitude of the resistance value that vibrates each magnetoresistive element decreases. As the external magnetic field H _E (effective magnetic field H _eff in the magnetization free layer 104) applied to the resistive element is increased, it is preferable to increase the current density of the direct current applied to each magnetoresistive element.

  Further, in the magnetoresistive effect device 300, the number of the first magnetoresistive effect elements may be one (one of the first magnetoresistive effect elements 101a and 101b).

  Thus, the magnetoresistive effect device 300 includes the two first magnetoresistive effect elements 101a and 101b, the second magnetoresistive effect element 101c, the first port 109a to which the high frequency signal is input, and the high frequency signal. Is output from the second port 109b, the signal line 107, and a DC current input terminal 110 (DC application terminal). The first port 109a, the two first magnetoresistive elements 101a, 101b, and The second port 109b is connected in series via the signal line 107 in this order, and the first port 109a, the second magnetoresistive element 101c, and the second port 109b are connected in series via the signal line 107 in this order. The two first magnetoresistive effect elements 101a and 101b and the second magnetoresistive effect element 101c are respectively composed of a magnetization fixed layer 102 and a magnetization self layer. The first magnetoresistive element 101a (101b) and the second magnetoresistive element 101c each have a DC current input terminal 110 (DC). Connected to the direct current input terminal 110 (direct current application terminal) and the reference potential terminal 114 so that the other end side is on the reference potential terminal 114 side, and the first magnetoresistive effect element 101a ( 101b) and the second magnetoresistive effect element 101c, the relationship between the direction from one end side to the other end side and the direction from the magnetization free layer 104 to the magnetization fixed layer 102 is the first magnetoresistive element. The effect element 101a (101b) and the second magnetoresistance effect element 101c are formed so as to be reversed. Further, in the first magnetoresistive effect element 101a, a direct current input from a direct current input terminal 110 (DC application terminal) causes the first magnetoresistive effect element 101a to pass through the magnetization fixed layer 102 and the magnetization free layer 104. In the first magnetoresistive effect element 101b, the direct current input from the direct current input terminal 110 (direct current application terminal) is fixed in the first magnetoresistive effect element 101b by magnetization. The second magnetoresistive element 101c is formed so as to flow in the direction from the layer 102 to the magnetization free layer 104. The second magnetoresistive element 101c receives a direct current input from the direct current input terminal 110 (direct current application terminal). The element 101c is formed so as to flow in the direction from the magnetization free layer 104 to the magnetization fixed layer 102, and the spin torque resonance frequency of the first magnetoresistance effect element 101a and the second Spin torque resonance frequency of the magnetoresistive element 101c are different from each other, the spin torque resonance frequency of the spin torque resonance frequency and the second magnetoresistive element 101c of the first magnetoresistive element 101b are different from each other.

  Accordingly, when a high frequency signal is input to the two first magnetoresistive elements 101a and 101b and the second magnetoresistive element 101c from the first port 109a via the signal line 107, Spin torque resonance can be induced in the magnetoresistive effect elements 101a and 101b and the second magnetoresistive effect element 101c. Simultaneously with this spin torque resonance, a direct current flows in the direction from the magnetization fixed layer 102 to the magnetization free layer 104 in the two first magnetoresistance effect elements 101a and 101b, so that the first magnetoresistance effect element 101a has a The element impedance of the first magnetoresistance effect element 101a with respect to the same frequency as the spin torque resonance frequency increases, and the element of the first magnetoresistance effect element 101b with respect to the same frequency as the spin torque resonance frequency of the first magnetoresistance effect element 101b. Impedance increases. Similarly, simultaneously with the spin torque resonance, a direct current flows in the direction from the magnetization free layer 104 to the magnetization fixed layer 102 in the second magnetoresistance effect element 101c, whereby the spin torque of the second magnetoresistance effect element 101c is obtained. The element impedance of the second magnetoresistance effect element 101c with respect to the same frequency as the resonance frequency decreases.

  The first port 109a, the two first magnetoresistive elements 101a and 101b, and the second port 109b are connected in series in this order, so that the high frequency signal is reduced and the first magnetoresistive elements 101a and 101b are low. The non-resonant frequency in the impedance state can be passed to the second port 109b side, and the first magnetoresistive element 101a, 101b can be blocked from the second port 109b in the resonant frequency in the high impedance state. . Further, the first port 109a, the second magnetoresistive effect element 101c, and the second port 109b are connected in series in this order, so that the second magnetoresistive effect element 101c is in a low impedance state. The resonance frequency can be passed to the second port 109b side, and the second magnetoresistance effect element 101c can be blocked from the second port 109b at the non-resonance frequency where the impedance is high. As described above, the magnetoresistive effect device 300 converts the high-frequency signal input from the first port 109a into a frequency near the spin torque resonance frequency of the first magnetoresistive effect element 101a and the first magnetoresistive effect element 101b. The second port 109b can be cut off at a frequency in the vicinity of the spin torque resonance frequency, and the second port 109b side at a frequency in the vicinity of the spin torque resonance frequency of the second magnetoresistive element 101c. Can pass through. That is, the magnetoresistive effect device 300 has a minimum value of the passing amount of the high-frequency signal at the spin torque resonance frequency of the first magnetoresistive effect element 101a and the spin torque resonance frequency of the first magnetoresistive effect element 101b. The magnetoresistive effect element 101c has a maximum value of the passing amount of the high frequency signal at the spin torque resonance frequency, and functions as a high frequency filter.

  In the magnetoresistive effect device 300, the band near the spin torque resonance frequency of the first magnetoresistive effect element 101a or the band near the spin torque resonance frequency of the first magnetoresistive effect element 101b is the cutoff band. Since the spin torque resonance frequency of the first magnetoresistance effect element 101a and the spin torque resonance frequency of the second magnetoresistance effect element 101c are different from each other (the spin torque resonance frequency of the second magnetoresistance effect element 101c is the first Since the spin torque resonance frequency of the first magnetoresistive element 101a is higher or lower than the spin torque resonance frequency of the magnetoresistive effect element 101a), the high frequency signal is sent to the second port 109b side Can be passed through. In addition, since the spin torque resonance frequency of the first magnetoresistance effect element 101b and the spin torque resonance frequency of the second magnetoresistance effect element 101c are different from each other (the spin torque resonance frequency of the second magnetoresistance effect element 101c is The high frequency signal is sent to the second port on the high frequency side or low frequency side of the spin torque resonance frequency of the first magnetoresistive effect element 101b (because it is higher or lower than the spin torque resonance frequency of the first magnetoresistive effect element 101b). 109b can be passed. In the vicinity of the spin torque resonance frequency of the second magnetoresistance effect element 101c through which the high-frequency signal passes, the ratio of the attenuation amount to the attenuation amount of the high-frequency signal in the cutoff band can be further reduced, so that the first magnetoresistance The shoulder characteristics on the high frequency side or low frequency side of the cutoff band formed in the vicinity of the spin torque resonance frequency of the effect element 101a or in the vicinity of the spin torque resonance frequency of the first magnetoresistive effect element 101b can be made steep. become. That is, the magnetoresistive effect device 300 can function as a band cutoff filter having a steep shoulder characteristic on the high frequency side or low frequency side of the cutoff band.

  Furthermore, the magnetoresistive effect device 300 includes two first magnetoresistive elements 101a and 101b having different spin torque resonance frequencies, and the second magnetoresistive element 101c has two spin torque resonance frequencies. 1 is higher than the spin torque resonance frequency of each of the magnetoresistive effect elements 101a and 101b, or lower than the spin torque resonance frequency of each of the two first magnetoresistive effect elements 101a and 101b. It becomes possible to function as a band cut-off filter having a steep shoulder characteristic on the high frequency side or low frequency side of the band.

  In the above description, the example in which the two first magnetoresistive elements 101a and 101b are connected in series has been described. However, as in the case described in the first embodiment, There may be three or more magnetoresistive elements. A plurality of first magnetoresistive elements may be connected in parallel to each other. Even in the magnetoresistive effect device in these cases, the first port 109a, each first magnetoresistive effect element and the second port 109b are connected in series via the signal line 107 in this order, Similar to the magnetoresistive effect device 300, it can have frequency characteristics as a high frequency filter.

  In the above description, the example in which the two first magnetoresistive elements 101a and 101b and the second magnetoresistive element 101c are connected in series with each other has been described. However, in the first embodiment, Similarly to the case described, at least one of the two first magnetoresistive elements 101a and 101b and the second magnetoresistive element 101c may be connected in parallel.

(Fourth embodiment)
FIG. 11 is a schematic cross-sectional view of a magnetoresistive effect device 400 according to the fourth embodiment of the present invention. In the magnetoresistive effect device 400, differences from the magnetoresistive effect device 300 of the third embodiment will be mainly described, and description of common matters will be omitted as appropriate. Elements common to the magnetoresistive effect device 300 of the third embodiment are denoted by the same reference numerals, and description of the common elements is omitted. The magnetoresistive effect device 400 further includes a third magnetoresistive effect element 101d with respect to the magnetoresistive effect device 300 of the third embodiment. The third magnetoresistance effect element 101d includes a magnetization fixed layer 102 (third magnetization fixed layer), a magnetization free layer 104 (third magnetization free layer), and a spacer layer 103 (third Spacer layer). The first port 109a, the third magnetoresistance effect element 101d, and the second port 109b are connected in series via the signal line 107 in this order. More specifically, the first magnetoresistive effect element 101a and the third magnetoresistive effect element 101d are connected in series, and the first magnetoresistive effect element 101b and the third magnetoresistive effect element 101d are connected in series. The second magnetoresistive element 101c and the third magnetoresistive element 101d are connected in series with each other.

  The third magnetoresistive element 101d has one end side (in this example, the magnetization fixed layer 102 side) at the DC current input terminal 110 side and the other end side (in this example, the magnetization free layer 104 side) at the reference potential terminal. The DC current input terminal 110 and the reference potential terminal 114 are connected so as to be on the 114 side. That is, in the magnetoresistive effect device 400, the second magnetoresistive effect element 101c and the third magnetoresistive effect element 101d are fixed in the direction from the respective one end side to the other end side and from the respective magnetization free layers 104. The second magnetoresistive effect element 101c and the third magnetoresistive effect element 101d are formed so that the relationship with the direction to the layer 102 is the same. In this example, the direction from one end side to the other end side of each of the second magnetoresistive effect element 101c and the third magnetoresistive effect element 101d, and the direction from each magnetization free layer 104 to the magnetization fixed layer 102, However, both the second magnetoresistive effect element 101c and the third magnetoresistive effect element 101d are in a reverse relationship.

  The third magnetoresistance effect element 101d is formed such that a DC current input from the DC current input terminal 110 flows in the third magnetoresistance effect element 101d in the direction from the magnetization free layer 104 to the magnetization fixed layer 102. Has been. That is, in the magnetoresistive effect device 400, the direction of the direct current flowing through each of the second magnetoresistive effect element 101c and the third magnetoresistive effect element 101d, the respective magnetization fixed layer 102, the spacer layer 103, and the magnetization The relationship with the arrangement order of the free layer 104 is the same between the second magnetoresistive element 101c and the third magnetoresistive element 101d. Furthermore, the spin torque resonance frequency of the second magnetoresistive effect element 101c is higher than the spin torque resonance frequency of each of the two first magnetoresistive effect elements 101a and 101b, and the spin torque of the third magnetoresistive effect element 101d. The torque resonance frequency is lower than the spin torque resonance frequency of each of the two first magnetoresistive elements 101a and 101b.

  The high-frequency signal input from the first port 109a passes through the two first magnetoresistive elements 101a and 101b, the second magnetoresistive element 101c, and the third magnetoresistive element 101d, and then the second Output to the port 109b.

  One end (the magnetization fixed layer 102 side) of the third magnetoresistance effect element 101d is electrically connected to the signal line 107 (second magnetoresistance effect element 101c) via the lower electrode 106, and the other end (magnetization free). The layer 104 side) is electrically connected to the signal line 107 (second port 109b) via the upper electrode 105.

    The inductor 113 includes two signal lines 107 (first first magnetoresistive effect elements 101a, 101b, second magnetoresistive effect element 101c, third magnetoresistive effect element 101d, and second port 109b). Magnetoresistive effect elements 101a and 101b, second magnetoresistive effect element 101c and third magnetoresistive effect element 101d and signal line 107 between first port 109a, or first magnetoresistive effect element 101a, 101b, the second magnetoresistive element 101c and the signal line 107 between the third magnetoresistive element 101d and the second port 109b), and further connected to the reference potential terminal 114 for reference potential The terminal 108 can be connected to the ground 108. The DC current input terminal 110 has a signal line 107 between the two first magnetoresistive elements 101a and 101b, the second magnetoresistive element 101c, the third magnetoresistive element 101d, and the first port 109a. (The first magnetoresistance effect elements 101a and 101b, the second magnetoresistance effect element 101c, the signal line 107 between the third magnetoresistance effect element 101d and the first port 109a, or the first magnetoresistance effect The other of the signal lines 107 between the elements 101a and 101b, the second magnetoresistive effect element 101c and the third magnetoresistive effect element 101d and the second port 109b) is connected. By connecting a direct current source 112 to the direct current input terminal 110, a direct current is applied to the two first magnetoresistive elements 101a, 101b, the second magnetoresistive element 101c, and the third magnetoresistive element 101d. Can be applied.

  The direct current source 112 is connected to the ground 108 and the direct current input terminal 110 and is connected to two first magnetoresistive elements 101a and 101b, a signal line 107, a second magnetoresistive element 101c, and a third magnetoresistive effect. A closed circuit including the element 101d, the ground 108, and the direct current input terminal 110 is formed. The direct current source 112 applies a direct current from the direct current input terminal 110 to the closed circuit.

  The inductor 113 is connected between the signal line 107 and the ground 108 and has a function of cutting the high frequency component of the current by the inductor component and simultaneously passing the current invariant component. The inductor 113 may be either a chip inductor or an inductor using a pattern line. Also, a resistance element having an inductor component may be used. The inductance value of the inductor 113 is preferably 10 nH or more. This inductor 113 allows the two magnetoresistive elements 101a and 101b, the second magnetoresistive element 101c, and the third magnetoresistive element 101d to pass through the two without deteriorating the characteristics of the high-frequency signal. In a closed circuit including the first magnetoresistive effect elements 101a and 101b, the second magnetoresistive effect element 101c, the third magnetoresistive effect element 101d, the signal line 107, the inductor 113, the ground 108, and the direct current input terminal 110, A direct current applied from the direct current input terminal 110 can flow.

  The magnetic field application mechanism 111 is disposed in the vicinity of the two first magnetoresistive elements 101a and 101b, the second magnetoresistive element 101c, and the third magnetoresistive element 101d. By applying a magnetic field to the effect elements 101a and 101b, the second magnetoresistive effect element 101c, and the third magnetoresistive effect element 101d, the spin torque resonance frequency of each magnetoresistive effect element can be set.

  The other configuration of the magnetoresistive effect device 400 is the same as that of the magnetoresistive effect device 300 of the third embodiment.

  In the magnetoresistive effect device 400, the third magnetoresistive effect element 101 d has a direct current input from the direct current input terminal 110 so that the third magnetoresistive effect element 101 d passes through the third magnetoresistive effect element 101 d from the magnetization free layer 104 to the magnetization fixed layer 102. Thus, like the second magnetoresistive effect element 101c, it can be handled as a resistance element in which the impedance of the high-frequency signal decreases at the spin torque resonance frequency due to the spin torque resonance phenomenon.

  Due to the spin torque resonance phenomenon, the third magnetoresistive effect element 101d among the high frequency components of the high frequency signal (the high frequency signal that has passed through the two first magnetoresistive effect elements 101a and 101b) input from the first port 109a. The frequency component that coincides with or near the spin torque resonance frequency passes through the third magnetoresistive effect element 101d in the low impedance state, and is likely to be output to the second port 109b. On the other hand, a frequency component that is not in the vicinity of the spin torque resonance frequency of the third magnetoresistive effect element 101d in the high frequency component of the high frequency signal is transferred to the second port 109b by the third magnetoresistive effect element 101d in the high impedance state. It becomes difficult to output.

  FIG. 12 is a graph showing the relationship between the frequency of the high-frequency signal input to the magnetoresistive device 400 and the amount of attenuation. In FIG. 12, the vertical axis represents attenuation, and the horizontal axis represents frequency. The plot line 420 in FIG. 12 indicates that the magnetic field applied to the two first magnetoresistive elements 101a and 101b, the second magnetoresistive element 101c, and the third magnetoresistive element 101d is constant and applied. It is a graph when the direct current made is constant. fa is the spin torque resonance frequency of the first magnetoresistive effect element 101a, fb is the spin torque resonance frequency of the first magnetoresistive effect element 101b, and fc is the spin torque resonance of the second magnetoresistive effect element 101c. Frequency, and fe is the spin torque resonance frequency of the third magnetoresistive element 101d.

  As shown by the plot line 420 in FIG. 12, the band near the spin torque resonance frequency of the first magnetoresistive effect element 101a and the band near the spin torque resonance frequency of the first magnetoresistive effect element 101b are cut off bands. It becomes. Further, the second magnetoresistive effect element 101c causes the spin torque resonance frequency of the first magnetoresistive effect element 101a and the high frequency side of the spin torque resonance frequency of the first magnetoresistive effect element 101b (the above-described high cutoff band). On the frequency side), a high-frequency signal can be passed to the second port 109b side. In the vicinity of the spin torque resonance frequency of the second magnetoresistance effect element 101c through which the high-frequency signal passes, the ratio of the attenuation amount to the attenuation amount of the high-frequency signal in the cutoff band can be further reduced, so that the first magnetoresistance The shoulder characteristics on the high frequency side of the cutoff band formed in the vicinity of the spin torque resonance frequency of the effect element 101a and in the vicinity of the spin torque resonance frequency of the first magnetoresistance effect element 101b can be made steep. Further, the third magnetoresistive effect element 101d causes the spin torque resonance frequency of the first magnetoresistive effect element 101a and the low frequency side of the spin torque resonance frequency of the first magnetoresistive effect element 101b (the above-mentioned low cutoff band). On the frequency side), a high-frequency signal can be passed to the second port 109b side. In the vicinity of the spin torque resonance frequency of the third magnetoresistive effect element 101d through which the high-frequency signal passes, the ratio of the attenuation amount to the attenuation amount of the high-frequency signal in the cutoff band can be further reduced. The shoulder characteristics on the low frequency side of the cutoff band formed in the vicinity of the spin torque resonance frequency of the effect element 101a and in the vicinity of the spin torque resonance frequency of the first magnetoresistance effect element 101b can be made steep. That is, the magnetoresistive effect device 400 functions as a band cutoff filter having a steep shoulder characteristic on both the low frequency side and the high frequency side of the cutoff band, as indicated by the plot line 420 in FIG. In this case, in the vicinity of the spin torque resonance frequency of the second magnetoresistive effect element 101c and in the vicinity of the spin torque resonance frequency of the third magnetoresistive effect element 101d, the change of the attenuation amount of the high frequency signal with respect to the frequency is steep. Therefore, the spin torque resonance frequency of the second magnetoresistive effect element 101c is matched with the upper limit frequency of the cutoff band to be used, and the spin torque resonance frequency of the third magnetoresistive effect element 101d is set to the lower limit frequency of the cutoff band to be used. It is preferable to match.

  In the magnetoresistive effect device 400, the number of the first magnetoresistive effect elements may be one (one of the first magnetoresistive effect elements 101a and 101b).

  As described above, the magnetoresistance effect device 400 further includes the third magnetoresistance effect element 101d with respect to the magnetoresistance effect device 300, and the first port 109a, the third magnetoresistance effect element 101d, and the second magnetoresistance effect element 101d. The port 109b is connected in series via the signal line 107 in this order, and the two first magnetoresistive elements 101a and 101b, the second magnetoresistive element 101c, and the third magnetoresistive element 101d are fixed in magnetization. Layer 102, magnetization free layer 104, and spacer layer 103 disposed between them, and third magnetoresistive element 101d has one end thereof on the DC current input terminal 110 (DC application terminal) side, and the others Connected to the DC current input terminal 110 (DC application terminal) and the reference potential terminal 114 so that the end side is the reference potential terminal 114 side. The second magnetoresistive element 101c and the third magnetoresistive element 101d have a relationship between the direction from one end side to the other end side and the direction from the magnetization free layer 104 to the magnetization fixed layer 102, respectively. Are formed to be the same in the second magnetoresistive element 101c and the third magnetoresistive element 101d. Further, in the third magnetoresistance effect element 101d, a direct current input from the direct current input terminal 110 (DC application terminal) causes the third magnetoresistance effect element 101d to pass through the magnetization free layer 104 to the magnetization fixed layer 102. The spin torque resonance frequency of the second magnetoresistive effect element 101c is higher than the spin torque resonance frequency of the first magnetoresistive effect element 101a, and the third magnetoresistive effect element 101d The spin torque resonance frequency is lower than the spin torque resonance frequency of the first magnetoresistance effect element 101a, and the spin torque resonance frequency of the second magnetoresistance effect element 101c is that of the first magnetoresistance effect element 101b. The spin torque resonance frequency of the third magnetoresistive element 101d is higher than the spin torque resonance frequency. It is lower than the spin torque resonance frequency of 101b.

  Therefore, when a high frequency signal is input to the third magnetoresistance effect element 101d from the first port 109a via the signal line 107, spin torque resonance can be induced in the third magnetoresistance effect element 101d. . Simultaneously with this spin torque resonance, a direct current flows in the direction from the magnetization free layer 104 to the magnetization fixed layer 102 in the third magnetoresistive effect element 101d, whereby the spin torque resonance frequency of the third magnetoresistive effect element 101d. The element impedance of the third magnetoresistive effect element 101d for the same frequency is reduced.

The first port 109a, the third magnetoresistive effect element 101d, and the second port 109b are connected in series via the signal line 107 in this order, so that the high frequency signal is reduced by the third magnetoresistive effect element 101d. The resonance frequency in the impedance state allows the second port 109b to pass, and the third magnetoresistive element 101d can block the second port 109b in the non-resonance frequency in the high impedance state.

  The spin torque resonance frequency of the second magnetoresistance effect element 101c is higher than the spin torque resonance frequency of the first magnetoresistance effect element 101a, and the spin torque resonance frequency of the third magnetoresistance effect element 101d is the first magnetic resistance. Since it is lower than the spin torque resonance frequency of the resistance effect element 101a, a high frequency signal can be passed to the second port side on the high frequency side and the low frequency side of the spin torque resonance frequency of the first magnetoresistance effect element 101a. it can. The spin torque resonance frequency of the second magnetoresistive effect element 101c is higher than the spin torque resonance frequency of the first magnetoresistive effect element 101b, and the spin torque resonance frequency of the third magnetoresistive effect element 101d is the first. Since the spin torque resonance frequency of the magnetoresistive effect element 101b is lower than the spin torque resonance frequency of the first magnetoresistive effect element 101b, the high frequency signal is passed to the second port side on the high frequency side and the low frequency side of the spin torque resonance frequency of the first magnetoresistive effect element 101b. be able to. In the vicinity of the spin torque resonance frequency of the second magnetoresistive effect element 101c through which the high frequency signal passes and in the vicinity of the spin torque resonance frequency of the third magnetoresistive effect element 101d, the attenuation amount with respect to the attenuation amount of the high frequency signal in the cutoff band. , The cutoff band formed in the vicinity of the spin torque resonance frequency of the first magnetoresistance effect element 101a or in the vicinity of the spin torque resonance frequency of the first magnetoresistance effect element 101b can be reduced. The shoulder characteristics on both the frequency side and the low frequency side can be made steep. That is, the magnetoresistive effect device 400 can function as a band cutoff filter having a steep shoulder characteristic on both the high frequency side and the low frequency side of the cutoff band.

  Furthermore, since the magnetoresistive effect device 400 includes the two first magnetoresistive effect elements 101a and 101b having different spin torque resonance frequencies, the magnetoresistive effect device 400 has a wide cutoff band and the spin torque resonance of the second magnetoresistive effect element 101c. The frequency is higher than the spin torque resonance frequency of each of the two first magnetoresistive effect elements 101a and 101b, and the spin torque resonance frequency of the third magnetoresistive effect element 101d is two first magnetoresistive effect elements. Since it is lower than the spin torque resonance frequency of each of 101a and 101b, it becomes possible to function as a band cutoff filter having a steep shoulder characteristic on both the high frequency side and the low frequency side of the cutoff band.

  In the above description, the example in which the two first magnetoresistive elements 101a and 101b are connected in series has been described. However, as in the case described in the first embodiment, There may be three or more magnetoresistive elements. A plurality of first magnetoresistive elements may be connected in parallel to each other. Even in the magnetoresistive effect device in these cases, the first port 109a, each of the first magnetoresistive effect element and the second port 109b are connected in series via the signal line 107 in this order, Similar to the magnetoresistive effect device 400, it can have frequency characteristics as a high frequency filter.

  In the above description, the example in which the second magnetoresistive element 101c and the third magnetoresistive element 101d are connected in series with each other has been described. However, as in the case of the second embodiment. The second magnetoresistive effect element 101c and the third magnetoresistive effect element 101d may be connected in parallel to each other. Even in the magnetoresistive effect device in this case, the first port 109a, the second magnetoresistive effect element 101c, and the second port 109b are connected in series via the signal line 107 in this order, and the first port 109a The third magnetoresistive effect element 101d and the second port 109b are connected in series via the signal line 107 in this order, so that the third magnetoresistive effect element 101d and the second port 109b have frequency characteristics as a high frequency filter similar to the magnetoresistive effect device 400. it can.

  In the above description, the two first magnetoresistive elements 101a and 101b connected in series with each other, the second magnetoresistive element 101c and the third magnetoresistive element 101d connected in series with each other. However, as in the case described in the second embodiment, at least one of the two first magnetoresistive elements 101a and 101b and the second magnetism are connected. At least one of the resistance effect element 101c and the third magnetoresistance effect element 101d may be connected in parallel.

  In the magnetoresistive effect device 300 of the third embodiment and the magnetoresistive effect device 400 of the fourth embodiment, in order to further widen the cutoff band and make the shoulder characteristics steep, the second magnetism that makes the shoulder characteristics steep. The Q value of the resistance effect element 101c (third magnetoresistance effect element 101d) is larger than the Q value of at least one of the first magnetoresistance effect element 101a and the first magnetoresistance effect element 101b forming the cutoff band. It is preferable to do.

  The preferred embodiments of the present invention have been described above, but it is possible to make changes and additions of components in addition to the embodiments described above. For example, in order to prevent a DC signal from flowing through the high-frequency circuit connected to the first port 109a, the connection portion of the DC current input terminal 110 to the signal line 107 and the first port in the first to fourth embodiments. A capacitor for cutting a direct current signal may be connected in series to the signal line 107 between 109a. In addition, in order to prevent a DC signal from flowing through the high-frequency circuit connected to the second port 109b, the second magnetoresistive element 101c connected to the signal line 107 and the second magnetoresistance effect element 101c in the first to fourth embodiments A capacitor for cutting a DC signal may be connected in series to the signal line 107 between the second port 109b.

  In the first and third embodiments, the inductor 113 is connected to the signal line 107 and the reference potential terminal 114 (ground 108) between the second magnetoresistance effect element 101c and the second port 109b. In the example, the DC current input terminal 110 is connected to the signal line 107 between the first magnetoresistive element 101a and the first port 109a. However, the inductor 113 is used as the first magnetoresistive element. 101a and the first port 109a are connected to the signal line 107 and the reference potential terminal 114 (ground 108), and the direct current input terminal 110 is connected to the second magnetoresistive element 101c and the second port 109b. You may make it connect to the signal track | line 107 in between.

  In the second and fourth embodiments, the inductor 113 is connected to the signal line 107 and the reference potential terminal 114 (ground 108) between the third magnetoresistive element 101d and the second port 109b. In the example, the DC current input terminal 110 is connected to the signal line 107 between the first magnetoresistive element 101a and the first port 109a. However, the inductor 113 is used as the first magnetoresistive element. The signal line 107 between the terminal 101a and the first port 109a is connected to the reference potential terminal 114 (ground 108), and the direct current input terminal 110 is connected between the third magnetoresistive effect element 101d and the second port 109b. The signal line 107 may be connected.

  In the first to fourth embodiments, the example using the inductor 113 has been described. However, a resistor element may be used instead of the inductor 113. In this case, the resistance element is connected between the signal line 107 and the reference potential terminal 114 (ground 108), and has a function of cutting the high frequency component of the current by the resistance component. This resistance element may be either a chip resistance or a resistance by a pattern line. The resistance value of this resistance element is preferably equal to or higher than the characteristic impedance of the signal line 107. For example, when the characteristic impedance of the signal line 107 is 50Ω, when the resistance value of the resistance element is 50Ω, 45% of the high frequency power is cut by the resistance element, and when the resistance value of the resistance element is 500Ω, the high frequency power of 90%. Can be cut by a resistance element. With this resistance element, a direct current is applied to a closed circuit including the magnetoresistance effect element, the signal line 107, the resistance element, the ground 108, and the direct current input terminal 110 without deteriorating the characteristics of the high-frequency signal passing through the magnetoresistance effect element. A direct current applied from the input terminal 110 can flow.

  When a resistor element is used instead of the inductor 113, the DC signal is cut to the signal line 107 between the connection portion of the DC current input terminal 110 (or resistor element) to the signal line 107 and the first port 109a. For connecting the capacitor for connecting in series, and cutting the DC signal to the signal line 107 between the connection portion of the resistance element (or DC current input terminal 110) to the signal line 107 and the second port 109b. Connecting a capacitor for connecting a DC current applied from the DC current input terminal 110 to a closed circuit including the magnetoresistive effect element, the signal line 107, the resistance element, the ground 108, and the DC current input terminal 110 is efficient. It is preferable at the point which can be made to flow.

  In the first to fourth embodiments, the direction of the high-frequency signal flowing through each magnetoresistive element with respect to each magnetoresistive element is illustrated in the description of the first to fourth embodiments. Each magnetoresistive element may be formed so as to be opposite to the direction. For example, in the first to fourth embodiments, the first magnetoresistance effect elements 101a and 101b have the magnetization free layer 104 side connected to the first port 109a side, and the second magnetoresistance effect element 101c ( And the third magnetoresistive element 101d) has the magnetization free layer 104 side connected to the second port 109b side, but the first magnetoresistive elements 101a and 101b have the first pinned layer 102 side first. The second magnetoresistive effect element 101c (and the third magnetoresistive effect element 101d) may be connected to the port 109a side and the magnetization fixed layer 102 side may be connected to the second port 109b side. In these cases, the direction of the direct current input from the direct current source 112 to the direct current input terminal 110 may be opposite to the direction shown in the description of each embodiment.

  In the first to fourth embodiments, each of the first magnetoresistive elements 101a and 101b has the magnetization free layer 104 side on the DC current input terminal 110 side and each magnetization fixed layer 102 side on the reference potential terminal. The second magnetoresistive effect element 101c (and the third magnetoresistive effect element 101d) are connected to the direct current input terminal 110 and the reference potential terminal 114 so as to be on the 114 side. The first magnetoresistive effect is connected to the DC current input terminal 110 and the reference potential terminal 114 such that the side is the DC current input terminal 110 side and the magnetization free layer 104 side is the reference potential terminal 114 side. In the elements 101a and 101b, the magnetization fixed layer 102 side is the direct current input terminal 110 side, and the magnetization free layer 10 The second magnetoresistive effect element 101c (and the third magnetoresistive effect element 101d) are connected to the direct current input terminal 110 and the reference potential terminal 114 so that the side becomes the reference potential terminal 114 side. The layer 104 may be connected to the DC current input terminal 110 and the reference potential terminal 114 such that the layer 104 side becomes the DC current input terminal 110 side and the magnetization fixed layer 102 side becomes the reference potential terminal 114 side.

  In the first to fourth embodiments, a direct current from the direct current source 112 is input from a direct current input terminal 110 which is an example of a direct current application terminal, and each magnetoresistive element (first to third In the example applied to the magnetoresistive effect element), a DC voltage source is connected to the DC application terminal instead of the DC current source 112, and a DC voltage is applied to each magnetoresistive effect element (first to first) from the DC application terminal. 3 magnetoresistive effect elements) in the respective stacking directions so that a direct current flows through each magnetoresistive effect element. That is, the DC application terminal only needs to apply a DC current or a DC voltage to each magnetoresistive element (first to third magnetoresistive elements). The DC voltage source may be a DC voltage source capable of generating a constant DC voltage, or a DC voltage source capable of changing the magnitude of the generated DC voltage value.

In the first to fourth embodiments, the magnetoresistive effect device 100 (200, 300, 400) is described as an example having the magnetic field application mechanism 111 as a frequency setting mechanism (effective magnetic field setting mechanism). The setting mechanism (effective magnetic field setting mechanism) may be another example as shown below. For example, by applying an electric field to the magnetoresistive effect element and changing the electric field, the effective magnetic field in the magnetization free layer is changed by changing the anisotropic magnetic field H _k in the magnetization free layer, and the spin of the magnetoresistive effect element The torque resonance frequency can be changed. In this case, a mechanism for applying an electric field to the magnetoresistive effect element is a frequency setting mechanism (effective magnetic field setting mechanism). Also, the piezoelectric body is provided in the vicinity of the magnetization free layer, the piezoelectric deforming the piezoelectric element by applying an electric field to, by distorting the magnetization free layer, changing the anisotropy field H _k in the magnetization free layer Thus, the effective magnetic field in the magnetization free layer can be changed, and the spin torque resonance frequency of the magnetoresistive effect element can be changed. In this case, the mechanism for applying an electric field to the piezoelectric body and the piezoelectric body serve as a frequency setting mechanism (effective magnetic field setting mechanism). Also, a control film that is an antiferromagnetic material or a ferrimagnetic material having an electromagnetic effect is provided so as to be magnetically coupled to the magnetization free layer, and a magnetic field and an electric field are applied to the control film, By changing at least one of the electric fields, the exchange coupling magnetic field H _EX in the magnetization free layer can be changed to change the effective magnetic field in the magnetization free layer, thereby changing the spin torque resonance frequency of the magnetoresistive element. In this case, the mechanism for applying a magnetic field to the control film, the mechanism for applying an electric field to the control film, and the control film serve as a frequency setting mechanism (effective magnetic field setting mechanism).

  Further, even if there is no frequency setting mechanism (even if the magnetic field from the magnetic field applying mechanism 111 is not applied), if the spin torque resonance frequency of each magnetoresistive effect element is a desired frequency, the frequency setting mechanism (magnetic field) The application mechanism 111) may be omitted.

101a, 101b First magnetoresistive effect element 101c Second magnetoresistive effect element 101d Third magnetoresistive effect element 102 Magnetization fixed layer 103 Spacer layer 104 Magnetization free layer 105 Upper electrode 106 Lower electrode 107 Signal line 108 Ground 109a First 1 port 109b 2nd port 110 DC current input terminal 111 Magnetic field applying mechanism 112 DC current source 113 Inductor 114 Reference potential terminals 100, 200, 300, 400 Magnetoresistive device

Claims (8)

A first magnetoresistive element, a second magnetoresistive element, a first port to which a high-frequency signal is input, a second port from which a high-frequency signal is output, a signal line, and a DC application terminal; Have
The first port, the first magnetoresistive element, and the second port are connected in series in this order via the signal line,
The first port, the second magnetoresistive effect element, and the second port are connected in series in this order via the signal line,
The first magnetoresistive element and the second magnetoresistive element each have a magnetization fixed layer, a magnetization free layer, and a spacer layer disposed therebetween,
The first magnetoresistive effect element and the second magnetoresistive effect element are input from the direct current application terminal and flow through each of the first magnetoresistive effect element and the second magnetoresistive effect element. The relationship between the direction of current and the order of arrangement of the magnetization fixed layer, the spacer layer, and the magnetization free layer is reversed between the first magnetoresistive element and the second magnetoresistive element. Formed as
A magnetoresistive effect device, wherein a spin torque resonance frequency of the first magnetoresistive effect element and a spin torque resonance frequency of the second magnetoresistive effect element are different from each other. A plurality of the first magnetoresistance effect elements having different spin torque resonance frequencies;
The spin torque resonance frequency of the second magnetoresistive effect element is higher than the spin torque resonance frequency of each of the plurality of first magnetoresistive effect elements, or the spin of each of the plurality of first magnetoresistive effect elements. The magnetoresistive effect device according to claim 1, wherein the magnetoresistive effect device is lower than a torque resonance frequency. A third magnetoresistance effect element;
The first port, the third magnetoresistance effect element, and the second port are connected in series in this order via the signal line,
The first magnetoresistive effect element, the second magnetoresistive effect element, and the third magnetoresistive effect element each have a magnetization fixed layer, a magnetization free layer, and a spacer layer disposed therebetween,
The second magnetoresistive effect element and the third magnetoresistive effect element are input from the direct current application terminal and flow through each of the second magnetoresistive effect element and the third magnetoresistive effect element. The relationship between the direction of current and the order of arrangement of the magnetization fixed layer, the spacer layer, and the magnetization free layer is the same in the second magnetoresistive element and the third magnetoresistive element. Formed as
The spin torque resonance frequency of the second magnetoresistive element is higher than the spin torque resonance frequency of the first magnetoresistive element, and the spin torque resonance frequency of the third magnetoresistive element is the first magnetoresistive element. The magnetoresistive effect device according to claim 1, wherein the magnetoresistive effect device is lower than a spin torque resonance frequency of the magnetoresistive effect element. A third magnetoresistance effect element;
The first port, the third magnetoresistance effect element, and the second port are connected in series in this order via the signal line,
The first magnetoresistive effect element, the second magnetoresistive effect element, and the third magnetoresistive effect element each have a magnetization fixed layer, a magnetization free layer, and a spacer layer disposed therebetween,
The second magnetoresistive effect element and the third magnetoresistive effect element are input from the direct current application terminal and flow through each of the second magnetoresistive effect element and the third magnetoresistive effect element. The relationship between the direction of current and the order of arrangement of the magnetization fixed layer, the spacer layer, and the magnetization free layer is the same in the second magnetoresistive element and the third magnetoresistive element. Formed as
The spin torque resonance frequency of the second magnetoresistive effect element is higher than the spin torque resonance frequency of each of the plurality of first magnetoresistive effect elements, and the spin torque resonance frequency of the third magnetoresistive effect element is The magnetoresistive effect device according to claim 2, wherein the magnetoresistive effect device is lower than a spin torque resonance frequency of each of the plurality of first magnetoresistive effect elements. 1st magnetoresistive effect element, 2nd magnetoresistive effect element, 1st port into which a high frequency signal is input, 2nd port from which a high frequency signal is output, a signal line, and a magnetoresistive effect element A direct current application terminal capable of applying a direct current or direct current voltage, and a reference potential terminal,
The first port, the first magnetoresistive element, and the second port are connected in series in this order via the signal line,
The first port, the second magnetoresistive effect element, and the second port are connected in series in this order via the signal line,
The first magnetoresistive element and the second magnetoresistive element each have a magnetization fixed layer, a magnetization free layer, and a spacer layer disposed therebetween,
The first magnetoresistive effect element and the second magnetoresistive effect element have the DC application terminal so that one end side thereof is the DC application terminal side and the other end side thereof is the reference potential terminal side. And connected to the reference potential terminal,
The first magnetoresistive element and the second magnetoresistive element have a direction from the one end side to the other end side and a direction from the magnetization free layer to the magnetization fixed layer, respectively. The relationship is formed so that the relationship is reversed between the first magnetoresistive element and the second magnetoresistive element,
A magnetoresistive effect device, wherein a spin torque resonance frequency of the first magnetoresistive effect element and a spin torque resonance frequency of the second magnetoresistive effect element are different from each other. A plurality of the first magnetoresistance effect elements having different spin torque resonance frequencies;
The spin torque resonance frequency of the second magnetoresistive effect element is higher than the spin torque resonance frequency of each of the plurality of first magnetoresistive effect elements, or the spin of each of the plurality of first magnetoresistive effect elements. The magnetoresistive effect device according to claim 5, wherein the magnetoresistive effect device is lower than a torque resonance frequency. A third magnetoresistance effect element;
The first port, the third magnetoresistance effect element, and the second port are connected in series in this order via the signal line,
The first magnetoresistive effect element, the second magnetoresistive effect element, and the third magnetoresistive effect element each have a magnetization fixed layer, a magnetization free layer, and a spacer layer disposed therebetween,
The third magnetoresistance effect element is connected to the DC application terminal and the reference potential terminal so that one end side thereof is the DC application terminal side and the other end side thereof is the reference potential terminal side.
The second magnetoresistive effect element and the third magnetoresistive effect element have a direction from the one end side to the other end side and a direction from the magnetization free layer to the magnetization fixed layer, respectively. The relationship is formed so that the relationship is the same between the second magnetoresistive element and the third magnetoresistive element,
The spin torque resonance frequency of the second magnetoresistive element is higher than the spin torque resonance frequency of the first magnetoresistive element, and the spin torque resonance frequency of the third magnetoresistive element is the first magnetoresistive element. The magnetoresistive effect device according to claim 5, wherein the magnetoresistive effect device is lower than a spin torque resonance frequency of the magnetoresistive effect element. A third magnetoresistance effect element;
The first port, the third magnetoresistance effect element, and the second port are connected in series in this order via the signal line,
The first magnetoresistive effect element, the second magnetoresistive effect element, and the third magnetoresistive effect element each have a magnetization fixed layer, a magnetization free layer, and a spacer layer disposed therebetween,
The third magnetoresistance effect element is connected to the DC application terminal and the reference potential terminal so that one end side thereof is the DC application terminal side and the other end side thereof is the reference potential terminal side.
The second magnetoresistive effect element and the third magnetoresistive effect element have a direction from the one end side to the other end side and a direction from the magnetization free layer to the magnetization fixed layer, respectively. The relationship is formed so that the relationship is the same between the second magnetoresistive element and the third magnetoresistive element,
The spin torque resonance frequency of the second magnetoresistive effect element is higher than the spin torque resonance frequency of each of the plurality of first magnetoresistive effect elements, and the spin torque resonance frequency of the third magnetoresistive effect element is The magnetoresistive effect device according to claim 6, wherein the magnetoresistive effect device is lower than a spin torque resonance frequency of each of the plurality of first magnetoresistive effect elements.

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