JP2019134114A - Magnetoresistive device effect and magnetoresistive effect module - Google Patents

Abstract

To provide a magnetoresistive effect device having excellent frequency characteristics in the vicinity of a cutoff frequency.SOLUTION: A magnetoresistive effect device includes a first port, a second port, a first circuit unit and a second circuit unit connected between the first port and the second port, a reference potential terminal, and a DC application terminal, and the first circuit unit includes a first magnetoresistive effect element and a first conductor, and the first conductor is connected such that a high-frequency current branches and flows with respect to the first magnetoresistive effect element and the reference potential terminal, and the second circuit unit includes a second magnetoresistive effect element and a second conductor arranged spaced apart via an insulator, and the first end of the second conductor is connected such that a high-frequency magnetic field generated by the high-frequency current is applied to a magnetization free layer of the second magnetoresistance effect element.SELECTED DRAWING: Figure 1

Description

  The present invention relates to a magnetoresistive effect device and a magnetoresistive effect module.

  In recent years, with the enhancement of functions of mobile communication terminals such as mobile phones, the speed of wireless communication has been increased. Since the communication speed is proportional to the bandwidth of the frequency used, the frequency band required for communication is increasing. Accordingly, the number of high frequency filters required for mobile communication terminals is also increasing.

  In recent years, spintronics has been studied as a field that may be applied to new high-frequency components. One of the phenomena attracting attention among them is a ferromagnetic resonance phenomenon caused by a magnetoresistive effect element.

  When an alternating current or an alternating magnetic field is applied to the ferromagnetic layer included in the magnetoresistive element, ferromagnetic resonance can be caused in the magnetization of the ferromagnetic layer. When ferromagnetic resonance occurs, the resistance value of the magnetoresistive element periodically oscillates at the ferromagnetic resonance frequency. This ferromagnetic resonance frequency changes depending on the strength of the magnetic field applied to the ferromagnetic layer, and generally the ferromagnetic resonance frequency is a high frequency band of several to several tens GHz.

  For example, Patent Document 1 describes a magnetoresistive effect device that can be used as a high-frequency device such as a high-frequency filter using a ferromagnetic resonance phenomenon.

JP 2017-063397 A

  However, the high frequency filter using the magnetoresistive effect device cannot be said to have sufficient frequency characteristics (shoulder characteristics) in the vicinity of the cutoff frequency.

  The present invention has been made in view of the above problems, and provides a magnetoresistive effect device having excellent frequency characteristics in the vicinity of a cutoff frequency.

In order to solve the above problems, it has been found that by combining circuit units (elements) exhibiting predetermined characteristics, the respective characteristics are overlapped, and the shoulder characteristics of the magnetoresistive effect device can be improved.
That is, this invention provides the following means in order to solve the said subject.

(1) A magnetoresistive effect device according to a first aspect includes a first port, a second port, a first circuit unit connected between the first port and the second port, and A second circuit unit; a reference potential terminal connected to or in common with the first circuit unit and the second circuit unit; the first magnetoresistive element of the first circuit unit; and the second circuit unit. A DC application terminal to which a power source for applying a DC current or a DC voltage can be connected in common or in common to the second magnetoresistive element, wherein the first circuit unit includes a magnetization fixed layer and a magnetization free layer And a first conductor connected to one end of the first magnetoresistance effect element, the first conductor having a high-frequency current The first magnet The first end of the first conductor is connected to the input side of the high-frequency current, and the second end of the first conductor is connected to the reference potential so as to branch and flow with respect to the resistance effect element and the reference potential terminal. The second circuit unit is connected to the terminal, and the second circuit unit is provided between the second magnetoresistive effect element and the second magnetoresistive effect element, each including a magnetization fixed layer, a magnetization free layer, and a spacer layer sandwiched therebetween. A second conductor spaced apart via an insulator, and the first end of the second conductor has a high-frequency magnetic field generated by a high-frequency current flowing through the second conductor. A magnetoresistive effect device connected to an input side of a high-frequency current so as to be applied to the magnetization free layer, and the second magnetoresistive effect element being connected to the DC application terminal.

(2) The magnetoresistance effect device according to the above aspect further includes a third circuit unit connected between the first port and the second port, and the third circuit unit includes a magnetization fixed layer, A third magnetoresistive element including a magnetization free layer and a spacer layer sandwiched between them, and a third conductor connected to one end of the third magnetoresistive element, wherein the third conductor is a high frequency The first end of the third conductor is connected to the input side of the high-frequency current so that the current branches and flows with respect to the third magnetoresistance effect element and the reference potential terminal, and the second end of the third conductor When the end portion is connected to the reference potential terminal and the DC application terminal is connected to a power supply, the first magnetoresistive effect element in the first magnetoresistive effect element with respect to the flow direction of the direct current flowing through the first magnetoresistive effect element Magnetization fixed layer, The magnetization fixed layer, the spacer layer, and the magnetization free layer in the third magnetoresistive effect element with respect to the positional relationship between the magnetic layer and the magnetization free layer and the flow direction of the direct current flowing through the third magnetoresistive effect element The positional relationship of the layers may be opposite.

(3) The magnetoresistive effect device according to the aspect further includes a third circuit unit connected between the first port and the second port, and the third circuit unit includes a magnetization fixed layer, A third magnetoresistive element including a magnetization free layer and a spacer layer sandwiched between them, and a third conductor connected to one end of the third magnetoresistive element, wherein the third conductor is a high frequency The first end of the third conductor is connected to the input side of the high-frequency current so that the current branches and flows with respect to the third magnetoresistance effect element and the reference potential terminal, and the second end of the third conductor. The end portion is connected to the reference potential terminal, and the magnetization fixed layer and the spacer in the first magnetoresistive effect element are based on the connection point of the DC current or DC voltage input side of the first magnetoresistive effect element. Layer and the position of the magnetization free layer And the positions of the magnetization fixed layer, the spacer layer, and the magnetization free layer in the third magnetoresistance effect element based on the relationship and the connection point on the input side of the DC current or DC voltage of the third magnetoresistance effect element The relationship may be the opposite.

(4) A magnetoresistive effect module according to a second aspect includes the magnetoresistive effect device according to the above aspect, and a DC current source or a DC voltage source connected to the DC application terminal of the magnetoresistive effect device. .

  According to the magnetoresistive effect device according to the above aspect, excellent frequency characteristics in the vicinity of the cutoff frequency can be obtained.

It is the schematic diagram which showed the circuit structure of the magnetoresistive effect device which concerns on 1st Embodiment. It is a schematic diagram which shows the signal characteristic in case a 1st circuit unit and a 2nd circuit unit are independent, and the signal characteristic of a magnetoresistive effect module containing these. It is the schematic diagram which showed the circuit structure of another example of the magnetoresistive effect module concerning 1st Embodiment. It is the schematic diagram which showed the circuit structure of another example of the magnetoresistive effect module concerning 1st Embodiment. It is a schematic diagram which shows the signal characteristic in case a 1st circuit unit and a 2nd circuit unit are independent, and the signal characteristic of a magnetoresistive effect module containing these. It is the schematic diagram which showed the circuit structure of the magnetoresistive effect module concerning 2nd Embodiment. It is a schematic diagram which shows the signal characteristic in case a 1st circuit unit, a 2nd circuit unit, and a 3rd circuit unit are independent, and the signal characteristic of a magnetoresistive effect module containing these. It is a schematic diagram which shows the connection method of a 1st circuit unit, a 2nd circuit unit, and a 3rd circuit unit. It is the schematic diagram which showed the circuit structure of another example of the magnetoresistive effect module concerning 2nd Embodiment. It is the schematic diagram which showed the circuit structure of another example of the magnetoresistive effect module concerning 2nd Embodiment. It is the schematic diagram which showed the circuit structure of another example of the magnetoresistive effect module concerning 2nd Embodiment. It is the schematic diagram which showed the circuit structure of another example of the magnetoresistive effect module concerning 2nd Embodiment. It is the schematic diagram which showed the circuit structure of another example of the magnetoresistive effect module concerning 2nd Embodiment.

  Hereinafter, the magnetoresistive effect module will be described in detail with reference to the drawings as appropriate. In the drawings used in the following description, in order to make the features easier to understand, the portions that become the features may be shown in an enlarged manner for the sake of convenience, and the dimensional ratios of the respective components may differ from the actual ones. The materials, dimensions, and the like exemplified in the following description are merely examples, and the present invention is not limited to these, and can be implemented with appropriate modifications within the scope of the effects of the present invention.

(First embodiment)
FIG. 1 is a schematic diagram showing a circuit configuration of the magnetoresistive effect module according to the first embodiment. The magnetoresistive effect device includes a first port 1, a second port 2, a first circuit unit 10, a second circuit unit 20, a reference potential terminal 3, and a DC application terminal 4. When the power supply 90 is connected to the DC application terminal 4, the magnetoresistive effect module 100 is obtained. The magnetoresistive effect module 100 receives a signal from the first port 1 and outputs a signal from the second port 2.

<First port and second port>
The first port 1 is an input terminal of the magnetoresistive effect module 100. By connecting an AC signal source (not shown) to the first port 1, an AC signal (high frequency signal) can be applied to the magnetoresistive effect module 100. The high frequency signal applied to the magnetoresistive effect module 100 is a signal having a frequency of 100 MHz or more, for example. The second port 2 is an output terminal of the magnetoresistive effect module 100.

<First circuit unit>
The first circuit unit 10 is connected between the first port 1 and the second port 2. In the first circuit unit 10, a current branching element 11 is incorporated. The current branching element 11 includes a first magnetoresistance effect element 12 and a first conductor 14. The first conductor 14 is connected to one end of the first magnetoresistive element 12 in the stacking direction. The first end 14 a of the first conductor 14 is connected to the high-frequency current input side of the first circuit unit 10, and the second end 14 b of the first conductor 14 is connected to the reference potential terminal 3. The high-frequency current _IRC flowing through the first conductor 14 branches and flows to the first magnetoresistance effect element 12 and the reference potential terminal 3.

<First conductor>
The first conductor 14 functions as an electrode provided in the stacking direction of the first magnetoresistive effect element 12 as well as a wiring for passing a high-frequency current _IRC . The first conductor 14 is made of a conductive material. For example, Ta, Cu, Au, AuCu, Ru, Al, or the like can be used for the first conductor 14. A counter electrode 15 may be provided at the other end of the first magnetoresistive element 12 in the stacking direction. As the counter electrode 15, the same electrode exemplified as the first conductor 14 can be used. The other end of the first magnetoresistive element 12 in the stacking direction is connected to the output side of the high-frequency current _IRC in the first circuit unit 10 via the counter electrode 15.

<Magnetoresistance effect element>
The first magnetoresistance effect element 12 includes a magnetization fixed layer 12A, a magnetization free layer 12B, and a spacer layer 12C. The spacer layer 12C is located between the magnetization fixed layer 12A and the magnetization free layer 12B. The magnetization of the magnetization fixed layer 12A is less likely to move than the magnetization of the magnetization free layer 12B, and is fixed in one direction under a predetermined magnetic field environment. The magnetization direction of the magnetization free layer 12B changes relative to the magnetization direction of the magnetization fixed layer 12A, thereby functioning as the first magnetoresistance effect element 12.

  The magnetization fixed layer 12A is made of a ferromagnetic material. The magnetization fixed layer 12A is preferably made of a high spin polarizability material such as Fe, Co, Ni, an alloy of Ni and Fe, an alloy of Fe and Co, or an alloy of Fe, Co and B. By using these materials, the rate of change in magnetoresistance of the first magnetoresistance effect element 12 is increased. The magnetization fixed layer 12A may be made of a Heusler alloy. The thickness of the magnetization fixed layer 12A is preferably 1 to 20 nm.

The magnetization pinning method of the magnetization pinned layer 12A is not particularly limited. For example, an antiferromagnetic layer may be added so as to be in contact with the magnetization fixed layer 12A in order to fix the magnetization of the magnetization fixed layer 12A. Further, the magnetization of the magnetization fixed layer 12A may be fixed using magnetic anisotropy caused by the crystal structure, shape, and the like. For the antiferromagnetic layer, FeO, CoO, NiO, CuFeS ₂ , IrMn, FeMn, PtMn, Cr, Mn, or the like can be used.

  The magnetization free layer 12B is made of a ferromagnetic material whose magnetization direction can be changed by an externally applied magnetic field or spin-polarized electrons.

  As a material for the magnetization free layer 12B, CoFe, CoFeB, CoFeSi, CoMnGe, CoMnSi, CoMnAl, FeB, Co, CoCr-based alloy, Co multilayer film, CoCrPt-based alloy, FePt-based alloy, rare earth-containing SmCo-based alloy or TbFeCo alloy, etc. Can be used. The magnetization free layer 12B may be made of a Heusler alloy.

  The thickness of the magnetization free layer 12B is preferably about 0.5 to 20 nm. Further, a high spin polarizability material may be inserted between the magnetization free layer 12B and the spacer layer 12C. By inserting a high spin polarizability material, a high magnetoresistance change rate can be obtained.

  Examples of the high spin polarizability material include a CoFe alloy and a CoFeB alloy. The film thickness of either the CoFe alloy or the CoFeB alloy is preferably about 0.2 to 1.0 nm.

  The spacer layer 12C is a layer disposed between the magnetization fixed layer 12A and the magnetization free layer 12B. The spacer layer 12C is composed of a layer formed of a conductor, an insulator or a semiconductor, or a layer including a conduction point formed of a conductor in the insulator. The spacer layer 12C is preferably a nonmagnetic layer.

  For example, when the spacer layer 12C is made of an insulator, the first magnetoresistive effect element 12 is a tunneling magnetoresistive (TMR) effect element, and when the spacer layer 12C is made of a metal, a giant magnetoresistive (GMR: Giant) is used. Magnetoresistive effect element.

When an insulating material is applied as the spacer layer 12C, an insulating material such as Al ₂ O ₃ , MgO, or MgAl ₂ O ₄ can be used. A high magnetoresistance change rate can be obtained by adjusting the film thickness of the spacer layer 12C so that a coherent tunnel effect appears between the magnetization fixed layer 12A and the magnetization free layer 12B. In order to efficiently use the TMR effect, the thickness of the spacer layer 12C is preferably about 0.5 to 3.0 nm.

  When the spacer layer 12C is made of a conductive material, a conductive material such as Cu, Ag, Au, or Ru can be used. In order to efficiently use the GMR effect, the thickness of the spacer layer 12C is preferably about 0.5 to 3.0 nm.

When the spacer layer 12C is made of a semiconductor material, a material such as ZnO, In ₂ O ₃ , SnO ₂ , ITO, GaO _x or Ga ₂ O _x can be used. In this case, the thickness of the spacer layer 12C is preferably about 1.0 to 4.0 nm.

When a layer including a conduction point constituted by a conductor in the nonmagnetic insulator is applied as the spacer layer 12C, CoFe, CoFeB, CoFeSi, CoMnGe is incorporated into the nonmagnetic insulator constituted by Al ₂ O ₃ or MgO. , CoMnSi, CoMnAl, Fe, Co, Au, Cu, Al, or a structure including a conduction point constituted by a conductor such as Mg or Mg is preferable. In this case, the thickness of the spacer layer 12C is preferably about 0.5 to 2.0 nm.

  A cap layer may be provided on the opposite side of the magnetization free layer 12B from the spacer layer 12C side (between the magnetization free layer 12B and the first conductor 14). The magnetization free layer 12B and the cap layer are preferably in contact with each other. A seed layer or a buffer layer may be disposed between the first magnetoresistive element 12 and the counter electrode 15. Examples of the cap layer, seed layer, or buffer layer include metal films such as Ru, Ta, Cu, and Cr, oxide films such as MgO, and laminated films thereof. When these layers are made of oxide films, the thickness of these layers is thin enough to allow current to flow. For example, the thickness is preferably such that current (including tunnel current) flows when a voltage of 3 V is applied in the stacking direction of the first magnetoresistive effect element 12, and specifically, it is preferably 5 nm or less. .

  As for the size of the first magnetoresistive element 12, it is desirable that the long side of the first magnetoresistive element 12 in a plan view is 500 nm or less. In addition, it is desirable that the short side of the first magnetoresistive element 12 in a plan view is 50 nm or more. When the planar view shape of the first magnetoresistive effect element 12 is not a rectangle (including a square), the long side of the rectangle circumscribing the planar view shape of the first magnetoresistive effect element 12 with the minimum area is defined as the first magnetic field. The long side of the first magnetoresistive effect element 12 is defined as the long side of the first magnetoresistive effect element 12, and the short side of the rectangle circumscribing the planar view shape of the first magnetoresistive effect element 12 with the minimum area is the plan view shape of the first magnetoresistive effect element 12. It is defined as the short side of.

  When the long side is as small as 500 nm or less, the volume of the magnetization free layer 12B becomes small, and a highly efficient ferromagnetic resonance phenomenon can be realized. Here, the “planar shape” is a shape viewed from the stacking direction of each layer constituting the first magnetoresistance effect element 12.

<Second circuit unit>
The second circuit unit 20 is connected between the first port 1 and the second port 2. The second circuit unit 20 in FIG. 1 is connected between the first circuit unit 10 and the second port 2, but is connected between the first port 1 and the first circuit unit 10. Also good. A magnetic field driving element 21 is incorporated in the second circuit unit 20. The magnetic field drive element 21 includes a second magnetoresistance effect element 22 and a second conductor 24.

  The second magnetoresistance effect element 22 includes a magnetization fixed layer 22A, a magnetization free layer 22B, and a spacer layer 22C. The second magnetoresistive element 22 is provided with a first electrode 27 at one end in the stacking direction and a counter electrode 28 at the other end in the stacking direction. The second magnetoresistance effect element 22 is connected to the DC application terminal 4 to which a power supply 90 for applying a DC current or a DC voltage to the second magnetoresistance effect element 22 can be connected.

The second conductor 24 is disposed so as to be separated from the second magnetoresistive element 22 via an insulator 26. The insulator 26 is thick enough to maintain the insulation between the second conductor 24 and the first electrode 27. For example, the thickness is preferably such that no current (including tunneling current) flows when a voltage of 4.5 V is applied in the stacking direction of the second magnetoresistive element 22, specifically 10 nm or more. It is preferable. The first end portion 24a of the second conductor 24 is connected to the input side of the high frequency current _{I RC} in the second circuit unit 20. A high frequency magnetic field is generated by the high frequency current _IRC flowing through the second conductor 24, and the generated high frequency magnetic field is applied to the magnetization free layer 22 </ b> B of the second magnetoresistive element 22. In order to efficiently apply a high-frequency magnetic field to the magnetization free layer 22B of the second magnetoresistive element 22, the thickness of the insulator 26 is preferably 1000 nm or less.

<Reference potential terminal>
The reference potential terminal 3 is connected to the first circuit unit 10 and the second circuit unit 20. The reference potential terminal 3 is connected to the reference potential and determines the reference potential of the magnetoresistive effect module 100. In FIG. 1, the reference potential is connected to the ground GND. The ground GND is provided outside the magnetoresistive effect module 100. The high-frequency current _IRC input to the first port 1 flows in the first circuit unit 10 and the second circuit unit 20 according to the potential difference from the reference potential of the reference potential terminal 3. In FIG. 1, the reference potential terminal 3 is integrated into one common for the first circuit unit 10 and the second circuit unit 20, but is divided for each of the first circuit unit 10 and the second circuit unit 20. May be provided.

<DC application terminal>
The DC application terminal 4 is connected to a power supply 90 and applies a DC current or a DC voltage in the stacking direction of the first magnetoresistance effect element 12 and the second magnetoresistance effect element 22. The first magnetoresistance effect element 12 is connected to a DC application terminal 4 to which a power supply 90 for applying a DC current or a DC voltage to the first magnetoresistance effect element 12 can be connected. The second magnetoresistance effect element 22 is connected to the DC application terminal 4 to which a power supply 90 for applying a DC current or a DC voltage to the second magnetoresistance effect element 22 can be connected. In this specification, the direct current is a current whose direction does not change with time, and includes a current whose magnitude changes with time. The DC voltage is a voltage whose direction does not change with time, and includes a voltage whose magnitude changes with time. The power supply 90 may be a DC current source or a DC voltage source. The power supply 90 may be a direct current source capable of generating a constant direct current or a direct current voltage source capable of generating a constant direct current voltage. The power source 90 may be a direct current source capable of changing the magnitude of the generated direct current value, or may be a direct current voltage source capable of changing the magnitude of the generated direct current voltage value.

  The current density of the direct current applied to the first magnetoresistance effect element 12 and the second magnetoresistance effect element 22 is smaller than the oscillation threshold current density of the first magnetoresistance effect element 12 and the second magnetoresistance effect element 22. Is preferred. The oscillation threshold current density of the first magnetoresistive effect element 12 and the second magnetoresistive effect element 22 is that a current having a current density equal to or higher than this value is applied so that the magnetizations of the magnetization free layers 12B and 22B have a constant frequency and Precession starts with a constant amplitude, and the first magnetoresistive effect element 12 and the second magnetoresistive effect element 22 oscillate (the outputs (resistance values of the first magnetoresistive effect element 12 and the second magnetoresistive effect element 22). ) Is the current density of the threshold (which fluctuates at a constant frequency and a constant amplitude).

As shown in FIG. 1, when the power source 90 is a direct current source, the power source 90 is switched so that the direct current I _DC flows in the first magnetoresistive element 12 from the magnetization free layer 12B toward the magnetization fixed layer 12A. Connect to DC application terminal 4. When the power source 90 is a DC voltage source, the power source 90 is set so that a DC voltage at which the magnetization free layer 12B has a higher potential than the magnetization fixed layer 12A is applied from the DC application terminal 4 in the first magnetoresistance effect element 12. Connect to DC application terminal 4. Further, in the example shown in FIG. 1, the direct current I _DC is to flow toward the magnetization free layer 22B from the magnetization fixed layer 22A through the second magnetoresistance effect element 22 connects the power supply 90 to the DC applied terminal 4 However, the flow direction of the current applied to the second magnetoresistive element 22 is not particularly limited.

<Other configurations>
The magnetoresistive effect module 100 is provided with an inductor 92 and a capacitor 94. The inductor 92 cuts the high frequency component of the current and passes the current invariant component. The capacitor 94 passes the high frequency component of the current and cuts the invariant component of the current. The inductor 92 is disposed in the portion to be suppressed flow of high frequency current I _RC, capacitor 94 is arranged in the portion to be suppressed flow of direct current I _DC. The inductor 92 in FIG. 1, the high frequency current I _RC output from the counter electrode 15 is controlled to flow in the second conductor 24 without branching the high-frequency current I _RC flowing through the second conductor 24 is the reference potential terminal 3 It is controlled to flow. The addition capacitor 94, the DC current I _DC flowing through the first magnetoresistance effect element 12 is prevented from flowing through the first port 1 and the second magnetoresistive element 22, flowing in the second magnetoresistance effect element 22 The direct current _IDC is suppressed from flowing to the second port 2.

  As the inductor 92, a chip inductor, an inductor using a pattern line, a resistance element having an inductor component, or the like can be used. The inductance of the inductor 92 is preferably 10 nH or more. A known capacitor can be used as the capacitor 94.

  Each circuit unit and each terminal are connected by a signal line. The shape of the signal line is preferably defined as a microstrip line (MSL) type or a coplanar waveguide (CPW) type. When designing the microstrip line (MSL) type or the coplanar waveguide (CPW) type, it is preferable to design the line width and the distance between the grounds so that the characteristic impedance of the signal line is equal to the impedance of the circuit system. . By designing in this way, the transmission loss of the signal line can be suppressed.

  The magnetoresistive effect module 100 preferably has a frequency setting mechanism 80. The frequency setting mechanism 80 is a magnetic field application mechanism that applies an external magnetic field, which is a static magnetic field, to the first magnetoresistive element 12 and the second magnetoresistive element 22. The frequency setting mechanism 80 sets the ferromagnetic resonance frequencies of the magnetization free layers 12B and 22B of the first magnetoresistive element 12 and the second magnetoresistive element 22. The frequency of the signal output from the magnetoresistive effect module 100 varies depending on the ferromagnetic resonance frequency of the magnetization free layers 12B and 22B. That is, the frequency of the output signal can be set by the frequency setting mechanism 80.

  The frequency setting mechanism 80 may be provided in each of the first magnetoresistive effect element 12 and the second magnetoresistive effect element 22 or may be provided in common. The frequency setting mechanism 80 is configured by, for example, an electromagnet type or stripline type magnetic field application mechanism that can variably control the applied magnetic field intensity by either voltage or current. Moreover, it may be configured by a combination of an electromagnet type or stripline type magnetic field application mechanism capable of variably controlling the applied magnetic field intensity and a permanent magnet that supplies only a constant magnetic field.

<Function of magnetoresistive device>
When a high frequency signal is input to the magnetoresistive effect module 100 from the first port 1, a high frequency current _IRC corresponding to the high frequency signal flows through the first circuit unit 10. The high-frequency current _IRC branches and flows to the first magnetoresistance effect element 12 and the reference potential terminal 3.

The magnetization of the magnetization free layer 12 </ b> B mainly oscillates by receiving a high frequency magnetic field generated by the high frequency current _IRC flowing through the first conductor 14. The magnetization of the magnetization free layer 12B by the ferromagnetic resonance phenomenon, the frequency of the high frequency current I _RC is, large vibration when near the ferromagnetic resonance frequency of the magnetization free layer 12B. When the vibration of magnetization of the magnetization free layer 12B increases, the resistance value change in the first magnetoresistance effect element 12 increases. The change in resistance, by applying a direct current I _DC to the stacking direction of the first magneto-resistive element 12 is output from the first magneto-resistive element 12 (first circuit unit 10). The sum of the output due to the change in resistance value resulting from the ferromagnetic resonance phenomenon and the output due to the high-frequency current _IRC branched and flowing to the first magnetoresistive effect element 12 is the first magnetoresistive effect element 12 (first circuit unit). 10).

Next, the high-frequency current I _RC output from the first circuit unit 10 passes through the capacitor 94 and flows to the second circuit unit 20. A high frequency magnetic field is generated when the high frequency current _IRC flows through the second conductor 24 of the second circuit unit 20. The generated high frequency magnetic field is applied to the magnetization free layer 22 </ b> B of the second magnetoresistive element 22. The magnetization of the magnetization free layer 22B vibrates in response to a high-frequency magnetic field generated by the high-frequency current _IRC flowing through the second conductor 24. The magnetization of the magnetization free layer 22B, the frequency of the high frequency current I _RC is, large vibration when near the ferromagnetic resonance frequency of the magnetization free layer 22B.

When the vibration of magnetization of the magnetization free layer 22B increases, the resistance value change in the second magnetoresistive element 22 increases. The change in resistance, by applying a direct current I _DC to the stacking direction of the second magneto-resistance effect element 22, output from the second magnetoresistance effect element 22 (second circuit unit 20), a second port 2 Is output from.

  That is, when the frequency of the high-frequency signal input from the first port 1 is in the vicinity of the ferromagnetic resonance frequency of the magnetization free layers 12B and 22B, the resistance values of the first magnetoresistive effect element 12 and the second magnetoresistive effect element 22 A large amount of fluctuation is output from the second port 2. On the other hand, when the frequency of the high-frequency signal deviates from the ferromagnetic resonance frequency of the magnetization free layers 12B and 22B, the fluctuation amount of the resistance value of the first magnetoresistive element 12 and the second magnetoresistive element 22 is small. , Almost no signal is output from the second port 2.

  FIG. 2 is a schematic diagram showing signal characteristics when the first circuit unit 10 and the second circuit unit 20 are single, and signal characteristics of the magnetoresistive effect module 100 including them. The signal characteristics correspond to the ratio of output power to input power. As shown in FIG. 2A, the first circuit unit 10 alone exhibits an anti-low lentian signal characteristic. The anti-Lorrentian signal characteristics are those that can be fitted with an anti-symmetric Cauchy-Lorentz distribution, and the anti-Lorrentian-like signal characteristics are peaks that improve pass characteristics (peaks that are convex upward) and decrease. This is a signal characteristic having two peaks, a peak (a peak convex downward). The signal characteristic when the first circuit unit 10 is single changes sharply between an upwardly convex peak and a downwardly convex peak. On the other hand, the second circuit unit 20 alone exhibits a low lentian signal characteristic. The signal characteristics of the Laurentian are signal characteristics that can be fitted by the Cauchy-Lorentz distribution, and the signal characteristics of the Laurentian form are signal characteristics having either a peak at which the pass characteristic is improved or a peak at which the pass characteristic is decreased. The difference in signal characteristics from the first circuit unit 10 is considered to be caused by the difference in the element configuration, the flow of high-frequency current with respect to the magnetoresistive effect element, and the like.

  When the signal characteristics of the first circuit unit 10 and the signal characteristics of the second circuit unit 20 are superimposed, the signal characteristics of the magnetoresistive effect module 100 are obtained. As shown in FIG. 2, the signal characteristic of the magnetoresistive effect module 100 has a high frequency in the vicinity of the signal peak position (upward convex peak) of the first circuit unit 10 and the signal peak position of the second circuit unit 20. It has a pass band with excellent side shoulder characteristics. Utilizing this signal characteristic, the magnetoresistive effect module 100 (or magnetoresistive effect device) can be used as a high frequency filter that can selectively pass a high frequency signal of a specific frequency.

  The signal peak position of the first circuit unit 10 (ferromagnetic resonance frequency of the magnetization free layer 12B of the first magnetoresistance effect element 12) and the signal peak position of the second circuit unit 20 (magnetization freedom of the second magnetoresistance effect element 22). May be the same as or different from the ferromagnetic resonance frequency of the layer 22B. When the signal peak positions are different, the difference between the frequencies of the two signal peaks is preferably in the range of 15% or less with respect to the center frequency of the signal peaks (the average value of the frequencies of the two signal peaks). More preferably, it is in the range of% or less. Further, the difference between the frequencies of the two signal peaks is preferably 200 MHz or less, more preferably 100 MHz or less, in terms of specific numerical values. The difference between the frequencies of the two signal peaks is preferably in the range of 0.5% or more with respect to the center frequency, and is preferably 5 MHz or more. In the anti-Lorrentian signal characteristics, the signal peak has an upwardly convex peak and a downwardly convex peak. The difference between the frequencies of these two signal peaks is the difference with respect to the frequency of the two downwardly convex peaks.

When the DC current I _DC flows toward the fixed magnetization layer 12A from the magnetization free layer 12B through the first magneto-resistive element 12, the first circuit unit 10 by itself a signal characteristic as shown in FIG. 2 (a) In this case, the ferromagnetic resonance frequency of the magnetization free layer 12B of the first magnetoresistance effect element 12 is higher than or equal to the ferromagnetic resonance frequency of the magnetization free layer 22B of the second magnetoresistance effect element 22. Preferably there is. The signal peak positions of the first circuit unit 10 and the second circuit unit 20 can be controlled by the frequency setting mechanism 80. The position of the signal peak of the circuit unit (ferromagnetic resonance frequency of the magnetization free layer of the magnetoresistive effect element) can also be changed by the planar view shape of the magnetoresistive effect element and the layer configuration of the magnetoresistive effect element. .

  Although the embodiments of the present invention have been described in detail with reference to the drawings, the configurations and combinations of the embodiments in the embodiments are examples, and the addition and omission of configurations are within the scope not departing from the gist of the present invention. , Substitutions, and other changes are possible.

  FIG. 3 is a schematic view showing a circuit configuration of another example of the magnetoresistive effect module according to the first embodiment. 3, the same components as those in FIG. 1 are denoted by the same reference numerals. The magnetoresistive effect module 101 shown in FIG. 3 is different from the magnetoresistive effect module 100 shown in FIG. 1 in that the current branching element 11 and the magnetic field driving element 21 share the DC application terminal 4 and the power supply 90. Different. Even when the DC application terminal 4 and the power supply 90 are shared as shown in FIG. 3, the signal characteristics do not change. Therefore, the signal characteristics of the first circuit unit 10 and the second circuit unit 20 are overlapped, and the shoulder characteristics of the excellent signal characteristics of the magnetoresistive effect module 101 are obtained.

  FIG. 4 is a schematic diagram showing a circuit configuration of another example of the magnetoresistive effect module according to the first embodiment. In FIG. 4, the same components as those in FIG. The magnetoresistive effect module 102 shown in FIG. 4 is that the first circuit unit 10 and the second circuit unit 20 are connected in parallel to the first port 1 in that the magnetoresistive effect module shown in FIG. Different from 100.

  As shown in FIG. 4, the first circuit unit 10 and the second circuit unit 20 may be connected in parallel rather than in series. Also in the magnetoresistive effect module 102 shown in FIG. 4, the signal characteristics of the first circuit unit 10 and the second circuit unit 20 are overlapped, and the shoulder characteristics of the signal characteristics are improved.

Although direct current I _DC is described an example in which flow toward the fixed magnetization layer 12A from the magnetization free layer 12B through the first magnetoresistance effect element 12 so far, to reverse the flow direction of the DC current I _DC However, the shoulder characteristics of the signal characteristics can be improved. FIG. 5 shows signal characteristics when the first circuit unit 10 and the second circuit unit 20 are independent (FIG. 5A) and signal characteristics of the magnetoresistive effect module 100 including these (FIG. 5B). It is a schematic diagram shown. Direction of the DC current I _DC flowing through the first magneto-resistive element 12, the point is oriented towards the magnetization free layer 12B from the magnetization fixed layer 12A, it differs from FIG. 2. As shown in FIG. 5A, the tendency of the signal characteristics when the first circuit unit 10 is single is reversed from that shown in FIG. As shown in FIG. 5B, the signal characteristics of the magnetoresistive effect module 100 in this case have a pass band excellent in shoulder characteristics on the low frequency side.

When the direct current I _DC flows through the first magnetoresistive element 12 from the magnetization fixed layer 12A toward the magnetization free layer 12B, the ferromagnetic resonance frequency of the magnetization free layer 12B of the first magnetoresistive element 12 is It is preferable that the frequency is lower than or the same as the ferromagnetic resonance frequency of the magnetization free layer 22B of the second magnetoresistance effect element 22. Incidentally, the second circuit unit 20 showing a Lorentzian-like signal characteristics, changing the application direction of the DC current I _DC, the signal characteristic is not inverted.

(Second Embodiment)
FIG. 6 is a schematic diagram showing a circuit configuration of the magnetoresistive effect module according to the second embodiment. The magnetoresistive effect module shown in FIG. 6 is different from the magnetoresistive effect module 100 shown in FIG. 1 in that the third circuit unit 30 is connected. 6, the same components as those in FIG. 1 are denoted by the same reference numerals.

  The third circuit unit 30 shown in FIG. 6 is connected between the first port 1 and the second port 2, and the first circuit unit 10 and the second circuit unit 20 are serially connected to the first port 1. It is connected to the. The third circuit unit 30 incorporates a current branching element 31 similar to that of the first circuit unit 10.

The current branching element 31 includes a third magnetoresistive element 32 and a third conductor 34. The third magnetoresistance effect element 32 includes a magnetization fixed layer 32A, a magnetization free layer 32B, and a spacer layer 32C provided therebetween. The third conductor 34 is connected to one end of the third magnetoresistance effect element 32. A counter electrode 35 is provided at the end of the third magnetoresistive element 32 that faces the third conductor 34. The first end 34 a of the third conductor 34 is connected to the high-frequency current input side of the third circuit unit 30, and the second end 34 b of the third conductor 34 is connected to the reference potential terminal 3. The high-frequency current _IRC flowing through the third conductor 34 branches and flows to the third magnetoresistance effect element 32 and the reference potential terminal 3. The other end of the third magnetoresistive element 32 in the stacking direction is connected to the output side of the high-frequency current _IRC in the third circuit unit 30 via the counter electrode 35.

If the power source 90 as shown in FIG. 6 is a direct current source, the direct current I _DC flows toward the fixed magnetization layer 12A from the magnetization free layer 12B through the first magneto-resistive element 12, a third magnetoresistive A power supply 90 is connected to the DC application terminal 4 so as to flow in the element 32 from the magnetization fixed layer 32A toward the magnetization free layer 32B. That is, when connecting the direct-current application terminal 4 to the power supply 90, to the flow direction of the DC current I _DC flowing through the first magneto-resistive element 12, the magnetization fixed layer 12A in the first magneto-resistive element 12, a spacer layer 12C and the positional relation of the magnetization free layer 12B, with respect to the flow direction of the DC current _{I DC} flowing through the third magneto-resistive element 32, the magnetization fixed layer 32A in the third magneto-resistive element 32, a spacer layer 32C and the free magnetization The positional relationship of the layer 32B is opposite.

  When the power supply 90 is a DC voltage source, a DC voltage at which the magnetization free layer 12B has a higher potential than the magnetization fixed layer 12A in the first magnetoresistance effect element 12 is applied from the DC application terminal 4, and the third magnetoresistance effect element At 32, the power supply 90 is connected to the DC application terminal 4 so that a DC voltage at which the magnetization fixed layer 32 </ b> A has a higher potential than the magnetization free layer 32 </ b> B is applied from the DC application terminal 4.

  The positional relationship of the magnetization fixed layer 12A, the spacer layer 12C, and the magnetization free layer 12B in the first magnetoresistance effect element 12 with reference to the connection point on the input side of the DC current or DC voltage of the first magnetoresistance effect element 12 The positional relationship of the magnetization fixed layer 32A, the spacer layer 32C, and the magnetization free layer 32B in the third magnetoresistance effect element 32 with reference to the connection point on the input side of the DC current or DC voltage of the third magnetoresistance effect element 32 , Is the opposite.

  The “connection point on the DC current or DC voltage input side” is a connection point on the side where a DC current is applied to the circuit unit or a connection point on the side that becomes a high potential by a DC voltage source. In the example shown in FIG. 6, the current branching element 11 of the first circuit unit 10 is the second end 14 b of the first conductor 14, and the current branching element 31 of the third circuit unit 30 is the counter electrode 35. One end. The first magnetoresistance effect element 12 is arranged in the order of the magnetization free layer 12B, the spacer layer 12C, and the magnetization fixed layer 12A with the first conductor 14 as a reference. The third magnetoresistive element 32 is arranged in the order of the magnetization fixed layer 32A, the spacer layer 32C, and the magnetization free layer 32B with the counter electrode 35 as a reference. That is, the first magnetoresistive effect element 12 and the third magnetoresistive effect element 32 are based on the connection point on the input side of the direct current or the direct current voltage, and the magnetization fixed layers 12A and 32A, the spacer layers 12C and 32C, and the free magnetization. The order of arrangement of the layers 12B and 32B is reversed.

The high-frequency current I _RC output from the first circuit unit 10 passes through the capacitor 94 and flows to the third circuit unit 30. Also in the third circuit unit 30, the high-frequency current _IRC branches and flows to the third magnetoresistive effect element 32 and the reference potential terminal 3 as in the first circuit unit 10. The magnetization of the magnetization free layer 32 </ b> B mainly oscillates by receiving a high frequency magnetic field generated by the high frequency current _IRC flowing through the third conductor 34. The magnetization of the magnetization free layer 32B by the ferromagnetic resonance phenomenon, the frequency of the high frequency current I _RC is, large vibration when near the ferromagnetic resonance frequency of the magnetization free layer 32B. When the vibration of magnetization of the magnetization free layer 32B increases, the resistance value change in the third magnetoresistance effect element 32 increases. This resistance change, by applying a direct current I _DC to the stacking direction of the third magnetoresistive element 32, is outputted from the third magnetoresistive element 32 (third circuit unit 30). The sum of the output due to the resistance value change caused by the ferromagnetic resonance phenomenon and the output due to the high-frequency current _IRC branched and flowing to the third magnetoresistive effect element 32 is the third magnetoresistive effect element 32 (third circuit unit). 30).

  FIG. 7 is a schematic diagram illustrating signal characteristics when the first circuit unit 10, the second circuit unit 20, and the third circuit unit 30 are independent, and signal characteristics of the magnetoresistive effect module 103 including these. FIG. 7A shows signal characteristics when the first circuit unit 10, the second circuit unit 20, and the third circuit unit 30 are independent, and FIG. 7B shows signal characteristics of the magnetoresistive effect module 103.

  As described above, the first circuit unit 10 and the third circuit unit 30 independently exhibit an anti-low lentian signal characteristic. On the other hand, the second circuit unit 20 alone exhibits a low lentian signal characteristic.

The first magnetoresistive element 12 third magnetoresistive element 32, the magnetization fixed layer 12A constituting these and direction of the DC current _{I DC} flowing inside, 32A, the spacer layer 12C, 32C and the magnetization free layer 12B, 32B The relationship with the arrangement of is opposite. For this reason, the signal characteristics of the first circuit unit 10 and the signal characteristics of the third circuit unit 30 are substantially line symmetric.

  When the signal characteristics of the first circuit unit 10, the signal characteristics of the second circuit unit 20, and the signal characteristics of the third circuit unit 30 are overlapped, the signal characteristics of the magnetoresistive effect module 103 are obtained. By superimposing these three signal characteristics, the signal characteristic of the magnetoresistive effect module 103 has a pass band excellent in shoulder characteristics on the low frequency side and the high frequency side.

  The signal peak position of the first circuit unit 10 (ferromagnetic resonance frequency of the magnetization free layer 12B of the first magnetoresistance effect element 12) and the signal peak position of the third circuit unit 30 (magnetization freedom of the third magnetoresistance effect element 32). The ferromagnetic resonance frequency of the magnetization free layer 12B of the first magnetoresistance effect element 12 is different from the ferromagnetic resonance frequency of the magnetization free layer 32B of the third magnetoresistance effect element 32. Is bigger than. The signal peak position of the second circuit unit 20 (the ferromagnetic resonance frequency of the magnetization free layer 22B of the second magnetoresistance effect element 22) is the signal peak position of the first circuit unit 10 and the signal peak position of the third circuit unit 30. It is preferable to be located between.

  The difference between the frequency of the signal peak position of the first circuit unit 10 and the frequency of the signal peak position of the third circuit unit 30 (difference in signal peak frequency) is 30% or less with respect to the center frequency of the two signal peaks. Is preferably in the range of 15% or less. The difference between the frequencies of the two signal peaks is preferably 400 MHz or less, more preferably 200 MHz or less, in terms of specific numerical values. The difference between the frequencies of the two signal peaks is preferably in the range of 0.5% or more with respect to the center frequency, and is preferably 5 MHz or more. In the anti-Lorrentian signal characteristics, the signal peak has an upwardly convex peak and a downwardly convex peak. The frequency difference between these two signal peaks is the difference between the frequencies of the two downwardly convex peaks. . The signal peak positions of the first circuit unit 10, the second circuit unit 20, and the third circuit unit 30 can be freely controlled by the frequency setting mechanism 80. The position of the signal peak of the circuit unit (ferromagnetic resonance frequency of the magnetization free layer of the magnetoresistive effect element) can also be changed by the planar view shape of the magnetoresistive effect element and the layer configuration of the magnetoresistive effect element. .

In the magnetoresistive effect module 103 shown in FIG. 6, the third circuit unit 30 is connected in series to the first circuit unit 10 and the second circuit unit 20 in the flow direction of the high-frequency current _IR . The third circuit unit 30 may be connected to at least one of the first circuit unit 10 and the second circuit unit 20 in series or in parallel, and is not limited to the magnetoresistive effect module 103 shown in FIG.

  FIG. 8 is a schematic diagram showing how to connect the first circuit unit 10, the second circuit unit 20, and the third circuit unit 30. In FIG. 8A, all are connected in series. Since the order of connection in series does not matter, it corresponds to FIG. In FIG. 8B, the first circuit unit 10 and the second circuit unit 20 are connected in series, and the third circuit unit 30 is in parallel with only the first circuit unit 10. In FIG. 8C, the first circuit unit 10 and the second circuit unit 20 are connected in series, and the third circuit unit 30 is in parallel with only the second circuit unit 20. In FIG. 8D, the first circuit unit 10 and the second circuit unit 20 are connected in series, and the third circuit unit 30 is in a parallel relationship with the first circuit unit 10 and the second circuit unit 20. In FIG. 8E, all are connected in parallel. In FIG. 8F, the first circuit unit 10 and the second circuit unit 20 are connected in parallel, and the third circuit unit 30 is in series with the first circuit unit 10 and the second circuit unit 20. In FIG. 8G, the first circuit unit 10 and the second circuit unit 20 are connected in parallel, and the third circuit unit 30 is in series with only the second circuit unit 20. In FIG. 8 (h), the first circuit unit 10 and the second circuit unit 20 are connected in parallel, and the third circuit unit 30 is in series with only the first circuit unit 10.

Further, like the magnetoresistive effect module 104 shown in FIG. 9, the first magnetoresistive effect element 12, the second magnetoresistive effect element 22, and the third magnetoresistive effect element 32 share the DC application terminal 4 and the power supply 90. May be. In FIG. 9, the third conductor 34 and the counter electrode 28 are connected via the inductor 92, the first electrode 27 and the reference potential terminal 3 are connected, and the counter electrode 28 and the second port 2 are connected to the capacitor 94. However, the third conductor 34 and the first electrode 27 are connected via the inductor 92, the counter electrode 28 and the reference potential terminal 3 are connected, and the first electrode 27 and the second port 2 are connected to each other. May be connected via a capacitor 94. In this case, the flow direction of the DC current I _DC flowing through the second magnetoresistance effect element 22 is reversed.

  In FIG. 9, “the connection point on the DC current or DC voltage input side” of the first magnetoresistive effect element 12 of the first circuit unit 10 is the first end portion 14 a of the first conductor 14 in the current branching element 11. The “connection point on the DC current or DC voltage input side” of the third magnetoresistive effect element 32 of the third circuit unit 30 is the end of the counter electrode 35 in the current branching element 31. Since the capacitor 94 exists between the first end 34 a of the third conductor 34 and the DC application terminal 4, the first end 34 a of the third conductor 34 is “a connection point on the input side of DC current or DC voltage”. Is not.

  The positional relationship of the magnetization fixed layer 12A, the spacer layer 12C, and the magnetization free layer 12B in the first magnetoresistance effect element 12 with reference to the connection point on the input side of the DC current or DC voltage of the first magnetoresistance effect element 12, The positional relationship of the magnetization fixed layer 32A, the spacer layer 32C, and the magnetization free layer 32B in the third magnetoresistance effect element 32 with reference to the connection point of the third magnetoresistance effect element 32 on the DC current or DC voltage input side, Is the opposite.

In FIG. 9, although the connection of the first port 1 side DC application terminal 4 and the power source 90 to the input side of the high frequency current I _RC, the high frequency current I _RC as magnetoresistive module 104A shown in FIG. 10 You may connect the DC application terminal 4 and the power supply 90 to the 2nd port 2 side which is an output side.

The Figure 9, for one of the power supply 90 in FIG. 10 (flow direction of the DC current I _DC), first magneto-resistive element 12, the second magnetoresistance effect element 22 and the third magnetoresistive element 32 is in series It is a positional relationship. In contrast, as the magnetoresistive effect module 104B shown in FIG. 11, for one power supply 90 (the flow direction of the DC current _{I DC),} first magneto-resistive element 12, and the second magnetoresistance effect element 22 The 3rd magnetoresistive effect element 32 may become a positional relationship in parallel. In this case, since the same voltage is applied to each magnetoresistive effect element, control becomes easy when the power supply 90 is a DC voltage source.

  Further, the DC application terminal 4 and the power supply 90 can be shared in each connection state of the circuit unit shown in FIG. The magnetoresistive effect module 104C shown in FIG. 12 is an example in which the DC application terminal 4 and the power source 90 are shared in the connection state of FIG. 8E, and the magnetoresistive effect module 104D shown in FIG. In this connection state, the DC application terminal 4 and the power supply 90 are shared. Further, the reference potential terminal 3 may be shared by the first circuit unit 10, the second circuit unit 20, and the third circuit unit 30, or may be provided respectively.

  As described above, according to the magnetoresistive effect modules 104 and 104A to 104D according to the present embodiment, excellent shoulder characteristics of the magnetoresistive effect modules 104 and 104A to 104D can be obtained. The signal characteristics of the magnetoresistive effect modules 104 and 104A to 104D have a pass band excellent in the shoulder characteristics on the low frequency side and the high frequency side by superimposing the anti-low lentian signal characteristics of the third circuit unit 30. Can be.

  The inductor 92 in the above embodiment can be changed to a resistance element. This resistance element has a function of cutting a high frequency component of a current by a resistance component. This resistance element may be either a chip resistance or a resistance by a pattern line. The resistance value of this resistance element is preferably equal to or greater than the characteristic impedance of the signal line output from the magnetoresistive effect element. For example, when the characteristic impedance of the signal line is 50Ω and the resistance value of the resistance element is 50Ω, 45% of high frequency power can be cut by the resistance element. When the characteristic impedance of the signal line is 50Ω and the resistance value of the resistance element is 500Ω, 90% of high frequency power can be cut by the resistance element. Even in this case, the output signal output from the magnetoresistive effect element can be efficiently supplied to the second port 2.

  In the above embodiment, when the power supply 90 connected to the DC application terminal 4 has a function of cutting the high frequency component of the current and passing the current invariant component at the same time, the inductor 92 may be omitted. Even in this case, the output signal output from the magnetoresistive effect element can be efficiently supplied to the second port 2.

  Moreover, although the said embodiment demonstrated based on the example which uses the frequency setting mechanism 80 as a magnetic field application mechanism, the following other examples can also be used for the frequency setting mechanism 80. FIG. For example, an electric field application mechanism that applies an electric field to the magnetoresistive effect element may be used as the frequency setting mechanism. When the electric field applied mechanism changes the electric field applied to the magnetization free layer of the magnetoresistive element, the anisotropic magnetic field in the magnetization free layer changes, and the effective magnetic field in the magnetization free layer changes. Then, the ferromagnetic resonance frequency of the magnetization free layer is set.

  For example, a piezoelectric body and an electric field application mechanism may be combined as the frequency setting mechanism. A piezoelectric body is provided in the vicinity of the magnetization free layer of the magnetoresistive effect element, and an electric field is applied to the piezoelectric body. The piezoelectric body to which the electric field is applied is deformed and distorts the magnetization free layer. When the magnetization free layer is distorted, the anisotropic magnetic field in the magnetization free layer changes, and the effective magnetic field in the magnetization free layer changes. Then, the ferromagnetic resonance frequency of the magnetization free layer is set.

  For example, as the frequency setting mechanism, a control film that is an antiferromagnetic material or a ferrimagnetic material having an electromagnetic effect, a mechanism that applies a magnetic field to the control film, and a mechanism that applies an electric field to the control film may be used. . An electric field and a magnetic field are applied to a control film provided to be magnetically coupled to the magnetization free layer. When at least one of an electric field and a magnetic field applied to the control film is changed, the exchange coupling magnetic field in the magnetization free layer changes, and the effective magnetic field in the magnetization free layer changes. Then, the ferromagnetic resonance frequency of the magnetization free layer is set.

  Further, even if there is no frequency setting mechanism 80 (even if a static magnetic field is not applied from the magnetic field application mechanism), if the ferromagnetic resonance frequency of the magnetization free layer of the magnetoresistive effect element is a desired frequency, the frequency setting mechanism 80 It is not necessary to have.

<Other uses>
Moreover, although the case where a magnetoresistive effect device is used as a high frequency filter was shown as an example above, the magnetoresistive effect device can also be used as a high frequency device such as an amplifier.

  When the magnetoresistive effect device is used as an amplifier, the direct current or direct current voltage applied from the power supply 90 is set to a predetermined magnitude or more. By doing in this way, the signal output from the 2nd port 2 becomes larger than the signal input from the 1st port 1, and it functions as an amplifier.

  As described above, the magnetoresistive effect device can function as a high-frequency device such as an amplifier.

DESCRIPTION OF SYMBOLS 1 1st port 2 2nd port 3 Reference potential terminal 4 DC application terminal 10 1st circuit unit 20 2nd circuit unit 30 3rd circuit unit 11, 31 Current branch type element 21 Magnetic field drive type element 12 1st magnetoresistance Effect element 22 Second magnetoresistive element 32 Third magnetoresistive element 12A, 22A, 32A Magnetization fixed layers 12B, 22B, 32B Magnetization free layers 12C, 22C, 32C Spacer layer 14 First conductor 24 Second conductor 34 Third Conductor 14a, 24a, 34a First end 14b, 34b Second end 26 Insulator 27 First electrode 15, 28, 35 Counter electrode 80 Frequency setting mechanism 90 Power supply 92 Inductor 94 Capacitors 100, 101, 102, 103, 104 , 104A, 104B, 104C, 104D Magnetoresistive effect module

Claims (4)

A first port;
A second port;
A first circuit unit and a second circuit unit connected between the first port and the second port;
A reference potential terminal connected to or in common with each of the first circuit unit and the second circuit unit;
A direct current application terminal capable of connecting a power source for applying a direct current or a direct voltage to the first magnetoresistive element of the first circuit unit and the second magnetoresistive element of the second circuit unit, respectively, or in common; With
The first circuit unit includes a first magnetoresistive element including a magnetization fixed layer, a magnetization free layer, and a spacer layer sandwiched therebetween, and a first conductor connected to one end of the first magnetoresistive element And comprising
The first conductor has a first end of the first conductor connected to a high-frequency current input side so that a high-frequency current flows in a branched manner with respect to the first magnetoresistive element and the reference potential terminal; A second end of the first conductor is connected to the reference potential terminal;
The second circuit unit includes an insulator between the second magnetoresistance effect element including a magnetization fixed layer, a magnetization free layer, and a spacer layer sandwiched therebetween, and the second magnetoresistance effect element. A second conductor spaced apart, and
The first end of the second conductor is connected to the input side of the high-frequency current so that a high-frequency magnetic field generated by the high-frequency current flowing through the second conductor is applied to the magnetization free layer of the second magnetoresistive element. A magnetoresistive effect device. A third circuit unit connected between the first port and the second port;
The third circuit unit includes a third magnetoresistive element including a magnetization fixed layer, a magnetization free layer, and a spacer layer sandwiched therebetween, a third conductor connected to one end of the third magnetoresistive element, With
The third conductor has a first end of the third conductor connected to a high-frequency current input side so that a high-frequency current flows in a branched manner with respect to the third magnetoresistive element and the reference potential terminal; A second end of the third conductor is connected to the reference potential terminal;
When the DC application terminal is connected to a power source, the magnetization fixed layer, the spacer layer, and the magnetization free layer in the first magnetoresistive element with respect to the direction of the DC current flowing through the first magnetoresistive element. The positional relationship of the layers, and the positional relationship of the magnetization fixed layer, the spacer layer, and the magnetization free layer in the third magnetoresistance effect element with respect to the flow direction of a direct current flowing through the third magnetoresistance effect element; The magnetoresistive device of claim 1, wherein A third circuit unit connected between the first port and the second port;
The third circuit unit includes a third magnetoresistive element including a magnetization fixed layer, a magnetization free layer, and a spacer layer sandwiched therebetween, a third conductor connected to one end of the third magnetoresistive element, With
The third conductor has a first end connected to a high-frequency current input side so that a high-frequency current flows in a branched manner with respect to the third magnetoresistance effect element and the reference potential terminal; A second end of the third conductor is connected to the reference potential terminal;
The positional relationship of the magnetization fixed layer, the spacer layer, and the magnetization free layer in the first magnetoresistance effect element, with reference to the connection point on the input side of the DC current or DC voltage of the first magnetoresistance effect element, The positional relationship of the magnetization fixed layer, the spacer layer, and the magnetization free layer in the third magnetoresistance effect element, with reference to the connection point on the input side of the DC current or DC voltage of the third magnetoresistance effect element, The magnetoresistive device of claim 1, wherein The magnetoresistance effect device according to any one of claims 1 to 3,
A magnetoresistive effect module comprising: a DC current source or a DC voltage source connected to the DC application terminal of the magnetoresistive effect device.

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