JPWO2016152462A1 - 薄膜構造体、及び薄膜構造体の製造方法、並びに半導体デバイス - Google Patents
薄膜構造体、及び薄膜構造体の製造方法、並びに半導体デバイス Download PDFInfo
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- 239000010409 thin film Substances 0.000 title claims abstract description 183
- 239000004065 semiconductor Substances 0.000 title claims abstract description 170
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 20
- 239000000463 material Substances 0.000 claims abstract description 197
- 239000000758 substrate Substances 0.000 claims abstract description 123
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- 239000000203 mixture Substances 0.000 claims description 10
- 229910018072 Al 2 O 3 Inorganic materials 0.000 claims description 9
- 238000000151 deposition Methods 0.000 claims description 9
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- 229910013641 LiNbO 3 Inorganic materials 0.000 claims description 6
- 239000013076 target substance Substances 0.000 claims description 5
- 229910010413 TiO 2 Inorganic materials 0.000 claims description 4
- 238000002679 ablation Methods 0.000 claims description 3
- 238000010438 heat treatment Methods 0.000 claims description 3
- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical compound [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 claims description 3
- 229910002601 GaN Inorganic materials 0.000 claims description 2
- 230000001678 irradiating effect Effects 0.000 claims 1
- 238000005304 joining Methods 0.000 claims 1
- 238000001338 self-assembly Methods 0.000 claims 1
- 238000000926 separation method Methods 0.000 abstract 2
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- 238000002441 X-ray diffraction Methods 0.000 description 18
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 18
- 239000001301 oxygen Substances 0.000 description 18
- 229910052760 oxygen Inorganic materials 0.000 description 18
- 238000003917 TEM image Methods 0.000 description 15
- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical compound [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 description 13
- 239000013077 target material Substances 0.000 description 13
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 description 11
- 238000006243 chemical reaction Methods 0.000 description 8
- 230000007547 defect Effects 0.000 description 6
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- 230000005540 biological transmission Effects 0.000 description 4
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- 229910002182 La0.7Sr0.3MnO3 Inorganic materials 0.000 description 3
- 230000008021 deposition Effects 0.000 description 3
- 238000002003 electron diffraction Methods 0.000 description 3
- 238000005516 engineering process Methods 0.000 description 3
- 239000007789 gas Substances 0.000 description 3
- 230000005291 magnetic effect Effects 0.000 description 3
- 239000002070 nanowire Substances 0.000 description 3
- 238000001552 radio frequency sputter deposition Methods 0.000 description 3
- 238000000851 scanning transmission electron micrograph Methods 0.000 description 3
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- MYMOFIZGZYHOMD-UHFFFAOYSA-N Dioxygen Chemical compound O=O MYMOFIZGZYHOMD-UHFFFAOYSA-N 0.000 description 1
- -1 LaTaO 3 Inorganic materials 0.000 description 1
- 230000001133 acceleration Effects 0.000 description 1
- 238000001514 detection method Methods 0.000 description 1
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- 230000000694 effects Effects 0.000 description 1
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- 229910000859 α-Fe Inorganic materials 0.000 description 1
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Abstract
Description
ここで、L2は薄膜材料の原子間距離、L1は基板材料の原子間距離である。
まず、p型半導体材料としてNiO、n型半導体材料としてZnOを選定し、NiOとZnOとの混合比率が、NiO:ZnO=3:7の混合焼結体(ターゲット物質)を用意した。
D.S.Sinn, Solid State Ionic 83 (1995)333
次に、上記試料について、上述したX線回折装置を使用し、結晶性及び配向性を評価した。
面内:ZnO(10−10)//ZnO(11−20)//NiO(110)//STO(110)
2 マトリックス(母相)
3 薄膜
4 基板
9 成膜室
12 ターゲット物質(混合物)
17 パルス発振器(パルスレーザ)
Claims (17)
- 柱状乃至略柱状に形成された分離相が母相中に分散した相分離ナノ構造を有する薄膜を備え、
前記薄膜は、熱平衡状態で相分離するp型半導体材料とn型半導体材料とを有し、
前記母相が、前記p型半導体材料及び前記n型半導体材料のうちのいずれか一方の半導体材料で形成されると共に、前記分離相は、他方の半導体材料で形成され、
かつ、前記薄膜は、前記分離相と前記母相とが三次元的な接合面を有する形態で基板上に形成されていることを特徴とする薄膜構造体。 - 前記基板は、前記p型半導体材料及び前記n型半導体材料との格子不整合度に基づいて材料選定されていることを特徴とする請求項1記載の薄膜構造体。
- 前記三次元的な接合面は、自己組織化による結晶成長により形成されていることを特徴とする請求項1又は請求項2記載の薄膜構造体。
- 前記薄膜は、前記基板上でのエピタキシャル成長により形成されていることを特徴とする請求項1乃至請求項3のいずれかに記載の薄膜構造体。
- 前記薄膜の結晶粒子は、三軸配向していることを特徴とする請求項1乃至請求項4のいずれかに記載の薄膜構造体。
- 前記薄膜は、パルスレーザ堆積法で前記基板上に堆積されてなることを特徴とする請求項1乃至請求項5のいずれかに記載の薄膜構造体。
- 前記p型半導体材料は、NiO、Cu2O、CuO、及びCoOの群から選択されたいずれか一種を主成分とした酸化物からなることを特徴とする請求項1乃至請求項6のいずれかに記載の薄膜構造体。
- 前記n型半導体材料は、ZnO、TiO2、Fe3O4、Fe2O3、MnO、及び酸化インジウムスズの群から選択されたいずれか一種を主成分とした酸化物からなることを特徴とする請求項1乃至請求項7のいずれかに記載の薄膜構造体。
- 前記基板は、SrTiO3、ZnO、MgO、ScAlMgO3、Al2O3、GaN、LiNbO3、及びLiTaO3の群から選択されたいずれか一種を主成分とした単結晶材料で形成されていることを特徴とする請求項1乃至請求項8のいずれかに記載の薄膜構造体。
- 前記母相と前記基板とは、主成分が異なる材料で形成されていることを特徴とする請求項1乃至請求項9のいずれかに記載の薄膜構造体。
- 前記母相と前記基板とは、主成分が同一の材料で形成されていることを特徴とする請求項1乃至請求項9のいずれかに記載の薄膜構造体。
- 熱平衡状態で相分離するp型半導体材料とn型半導体材料とを用意し、
前記p型半導体材料及び前記n型半導体材料を、基板上でそれぞれ自己組織化により単分子層に分離しながら三次元的に結晶成長させ、
前記p型半導体材料及び前記n型半導体材料のうちのいずれか一方の半導体材料で母相を形成し、他方の半導体材料で柱状乃至略柱状の分離相を形成し、 前記分離相が前記母相中に分散した相分離ナノ構造を有する薄膜を前記基板上に作製することを特徴とする薄膜構造体の製造方法。 - 前記結晶成長をエピタキシャル成長により行うことを特徴とする請求項12記載の薄膜構造体の製造方法。
- 前記p型半導体材料と前記n型半導体材料との混合物をターゲット物質として成膜室内で前記基板と対向状に配し、
減圧雰囲気下、前記基板を加熱すると共に、前記成膜室の外部から前記混合物にパルスレーザを照射してアブレーションを生じさせ、前記三次元的に結晶成長した薄膜を前記基板上に堆積することを特徴とする請求項12又は請求項13記載の薄膜構造体の製造方法。 - 前記エピタキシャル成長は、ヘテロエピタキシャル成長であることを特徴とする請求項13又は請求項14記載の薄膜構造体の製造方法。
- 前記エピタキシャル成長は、母相を形成する一方の半導体材料がホモエピタキシャル成長であり、分離相を形成する他方の半導体材料がヘテロエピタキシャル成長であることを特徴とする請求項13又は請求項14記載の薄膜構造体の製造方法。
- 請求項1乃至請求項11のいずれかに記載の薄膜構造体を有していることを特徴とする半導体デバイス。
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Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS50158290A (ja) * | 1974-06-10 | 1975-12-22 | ||
JP2003258278A (ja) * | 2002-03-04 | 2003-09-12 | Canon Inc | 光電変換装置及びその製造方法 |
JP2010049741A (ja) * | 2008-08-21 | 2010-03-04 | Ricoh Co Ltd | ナノ構造体及びこれを用いた光記録媒体 |
JP2011035243A (ja) * | 2009-08-04 | 2011-02-17 | Konica Minolta Holdings Inc | 有機光電変換素子及び有機光電変換素子の製造方法 |
WO2011115165A1 (ja) * | 2010-03-18 | 2011-09-22 | 株式会社豊田中央研究所 | ナノヘテロ構造体およびその製造方法 |
US20120192936A1 (en) * | 2007-01-17 | 2012-08-02 | Aqt Solar, Inc. | Thin-Film Photovoltaic Structures Including Semiconductor Grain and Oxide Layers |
JP2013065664A (ja) * | 2011-09-16 | 2013-04-11 | Toyota Central R&D Labs Inc | ナノヘテロ構造pn接合素子およびその製造方法 |
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Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS50158290A (ja) * | 1974-06-10 | 1975-12-22 | ||
JP2003258278A (ja) * | 2002-03-04 | 2003-09-12 | Canon Inc | 光電変換装置及びその製造方法 |
US20120192936A1 (en) * | 2007-01-17 | 2012-08-02 | Aqt Solar, Inc. | Thin-Film Photovoltaic Structures Including Semiconductor Grain and Oxide Layers |
JP2010049741A (ja) * | 2008-08-21 | 2010-03-04 | Ricoh Co Ltd | ナノ構造体及びこれを用いた光記録媒体 |
JP2011035243A (ja) * | 2009-08-04 | 2011-02-17 | Konica Minolta Holdings Inc | 有機光電変換素子及び有機光電変換素子の製造方法 |
WO2011115165A1 (ja) * | 2010-03-18 | 2011-09-22 | 株式会社豊田中央研究所 | ナノヘテロ構造体およびその製造方法 |
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