JPWO2015151198A1 - 紫外光用固体受光デバイス - Google Patents
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- G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
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- G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
- G01J1/00—Photometry, e.g. photographic exposure meter
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Abstract
Description
前記第一のフォトダイオード(1)は、第一の導電型(1)の半導体層領域(1−1)、該半導体層領域(1−1)の上に設けた前記導電型(1)と逆の第二の導電型(2)の半導体層領域(1−2)とで半導体接合が形成され、
前記半導体層領域(1−1)は、半導体不純物の濃度が層厚方向に分布し且つ該分布における最大濃度位置(1−1)を備え
前記半導体層領域(1−2)上には前記導電型(1)の半導体層領域(1−3)が設けられ、該半導体層領域(1−3)は、半導体不純物の濃度が層厚方向に分布し且つ該分布における最大濃度位置(1−2)を備え、
前記第二のフォトダイオード(2)は、第一の導電型(1)の半導体層領域(2−1)、該半導体層領域(2−1)の上に設けた前記導電型(1)と逆の第二の導電型(2)の半導体層領域(2−2)とで半導体接合が形成され、
前記半導体層領域(2−1)は、半導体不純物の濃度が層厚方向に分布し且つ該分布における最大濃度位置(2−1)を備え、
前記半導体層領域(2−2)上には前記導電型(1)の半導体層領域(2−3)が設けられ、該半導体層領域(2−3)は、半導体不純物の濃度が層厚方向に分布し且つ該分布における最大濃度位置(2−2)を備え、
前記最大濃度位置(1−1)と前記最大濃度位置(2−1)とは前記半導体基体の表面からの深さ方向において同じ若しくは実質的に同じであり、
前記最大濃度位置(1−2)と前記最大濃度位置(2−2)は前記半導体基体の表面からの深さ方向において異なっていることを特徴とする紫外光用固体受光デバイス(UVSD1)を提供することにある。
次に、p+np型素子構造を有する受光デバイス主要部の好適な製造例の一つを記述する。
ただし、別々にイオン注入条件を調整してもよい。
最大濃度位置(1−1)=565 nm
最大濃度位置(1-2)=30 nm
(B)第二のフォトダイオード(2)
最大濃度位置(2−1)=500 nm
最大濃度位置(2−2)=1 nm
101・・・半導体基体
102a、501a、601a・・・フォトダイオード(1)
102b、501b、601b・・・フォトダイオード(2)
103a・・・半導体層領域(1−1)
103b・・・半導体層領域(2−1)
104a・・・半導体層領域(1−2)
104b・・・半導体層領域(2−2)
105a・・・半導体接合(1)
105b・・・半導体接合(2)
106a・・・最大濃度位置(1−1)
106b・・・最大濃度位置(2−1)
107・・・表面
108a・・・最大濃度位置(1−2)
108b・・・最大濃度位置(2−2)
109a・・・半導体層領域(1−3)
109b・・・半導体層領域(2−3)
110a・・・層領域(A1)
110b・・・層領域(A2)
111b・・・層領域(B2)
400・・・紫外光用個体受光デバイス
401・・・半導体基体
402a・・・フォトダイオード(1)
402b・・・フォトダイオード(2)
403・・・差動回路
404a、404b・・・ライン
405・・・出力端子
Claims (6)
- シリコン(Si)を主成分とする半導体基体を有し、該半導体基体内には、実効上立体的に重ならない様に配されている第一のフォトダイオード(1)と第二のフォトダイオード(2)が設けられており、前記フォトダイオード(1)の出力(1)に基づく信号(1)と前記フォトダイオード(2)の出力(2)に基づく信号(2)とが入力される差動回路を備える紫外光用固体受光デバイスにおいて、
前記第一のフォトダイオード(1)は、第一の導電型(1)の半導体層領域(1−1)、該半導体層領域(1−1)の上に設けた前記導電型(1)と逆の第二の導電型(2)の半導体層領域(1−2)とで半導体接合が形成され、
前記半導体層領域(1−1)は、半導体不純物の濃度が層厚方向に分布し且つ該分布における最大濃度位置(1−1)を備え、
前記半導体層領域(1−2)上には前記導電型(1)の半導体層領域(1−3)が設けられ、該半導体層領域(1−3)は、半導体不純物の濃度が層厚方向に分布し且つ該分布における最大濃度位置(1−2)を備え、
前記第二のフォトダイオード(2)は、第一の導電型(1)の半導体層領域(2−1)、該半導体層領域(2−1)の上に設けた前記導電型(1)と逆の第二の導電型(2)の半導体層領域(2−2)とで半導体接合が形成され、
前記半導体層領域(2−1)は、半導体不純物の濃度が層厚方向に分布し且つ該分布における最大濃度位置(2−1)を備え
前記半導体層領域(2−2)上には前記導電型(1)の半導体層領域(2−3)が設けられ、該半導体層領域(2−3)は、半導体不純物の濃度が層厚方向に分布し且つ該分布における最大濃度位置(2−2)を備え、
前記最大濃度位置(1−1)と前記最大濃度位置(2−1)とは前記半導体基体の表面からの深さ方向において同じ若しくは実質的に同じであり、
前記最大濃度位置(1−2)と前記最大濃度位置(2−2)は前記半導体基体の表面からの深さ方向において異なっていることを特徴とする紫外光用固体受光デバイス。 - 前記最大濃度位置(1−2)は、前記最大濃度位置(2−2)より深い位置にあり、前記半導体層領域(1−3)は、前記最大濃度位置(1−2)よりも浅い領域においてUV−A,UV−Bの光が十分吸収され得る層厚を有し、前記半導体層領域(2−3)は、該半導体層領域(2−3)おいてUV−A,UV−Bの光の吸収が実効的にないと見做され得る厚み以下のところに前記最大濃度位置(2−2)を有することを特徴とする請求項1に記載の紫外光用固体受光デバイス。
- 前記差動回路が前記半導体基体内に前記フォトダイオード(1)と前記フォトダイオード(2)と一体的に設けられていることを特徴とする請求項1または請求項2に記載の紫外光用固体受光デバイス。
- 前記差動回路が差動増幅回路であることを特徴とする請求項3に記載の紫外光用固体受光デバイス。
- 請求項1乃至4のいずれか1項に記載の紫外光用固体受光デバイスを備えた電子機器。
- 前記電子機器は、通信機能を更に備えることを特徴とする請求項5に記載の電子機器。
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JP2012216756A (ja) * | 2010-10-14 | 2012-11-08 | Rohm Co Ltd | 光検出装置及びこれに用いる光学フィルター |
JP2013235227A (ja) * | 2011-12-14 | 2013-11-21 | Rohm Co Ltd | 光学フィルタ及びその製造方法並びに光検出装置、オートライト装置 |
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KR20160138110A (ko) | 2016-12-02 |
CN106133924B (zh) | 2019-03-15 |
TWI552370B (zh) | 2016-10-01 |
KR102219148B1 (ko) | 2021-02-22 |
US10126166B2 (en) | 2018-11-13 |
JP6416079B2 (ja) | 2018-10-31 |
US20170176248A1 (en) | 2017-06-22 |
TW201605066A (zh) | 2016-02-01 |
WO2015151198A1 (ja) | 2015-10-08 |
CN106133924A (zh) | 2016-11-16 |
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