JPWO2010082286A1 - Light emitting module and lamp unit - Google Patents

Abstract

In the light emitting module 40, the light wavelength conversion member 58 is provided in a transparent manner, converts the wavelength of light emitted from the semiconductor light emitting element 52, and emits the light from the emission surface 58b. The low refractive index layer 60 is formed of a material having a refractive index lower than that of the light wavelength conversion member 58 and is provided in contact with the emission surface 58 b of the light wavelength conversion member 58. The intermediate member 62 is formed of a material having a refractive index lower than that of the light wavelength conversion member 58 and is provided so as to be in contact with both the emission surface 52 a of the semiconductor light emitting element 52 and the incident surface 58 a of the light wavelength conversion member 58. The intermediate member 62 is provided so that the refractive index is lower than that of the low refractive index layer 60. Concavities and convexities are formed on both the exit surface 52a of the semiconductor light emitting element 52 and the entrance surface 62a of the intermediate member 62 that are in contact with each other.

Description

  The present invention relates to a light emitting module and a lamp unit including the light emitting module.

  2. Description of the Related Art In recent years, for the purpose of extending life and reducing power consumption, a technology that uses a light emitting module having a light emitting element such as an LED (Light Emitting Diode) as a light source for irradiating strong light such as a lamp unit that irradiates light in front of the vehicle Development is underway. However, in order to use in such applications, it is required to emit light with high luminous intensity to the light emitting module. Here, for example, in order to improve the extraction efficiency of white light, a light emitting element that mainly emits blue light, a yellow phosphor that emits mainly yellow light when excited by blue light, and blue light is transmitted from the light emitting element. An illuminating device has been proposed that includes blue-transmitting yellow-based reflecting means that reflects light having a wavelength equal to or greater than that of yellow light from a yellow-based phosphor (for example, see Patent Document 1).

  However, when converting the wavelength of light using a general powdered phosphor, when the light hits the phosphor particles, the light intensity of the light is weakened, thus realizing high light utilization efficiency Is difficult. For this reason, for example, a structure including a ceramic layer disposed in a path of light emitted by the light emitting layer has been proposed (see, for example, Patent Document 2).

JP 2007-59864 A JP 2006-5367 A

  In recent years, since a light emitting element such as an LED is used as a light source of a lamp unit mounted on a vehicle, it is important to increase the luminance and the luminous intensity of such a light emitting element. For this reason, development of a new technique for increasing the utilization efficiency of light emitted from the light emitting element is strongly desired. Here, for example, when a ceramic layer containing a phosphor is provided as in the technique described in Patent Document 2 described above, reflection occurs without exiting from the exit surface to be exited due to the difference in refractive index from the external space. There is a possibility that light exits from a surface that passes through the ceramic layer and is not desired to exit. Thus, when the ratio of the light emitted from the surface to be emitted with respect to the incident light is reduced, it is difficult to further increase the luminance or the luminous intensity of the light emitting element.

  Accordingly, the present invention has been made to solve the above-described problems, and an object of the present invention is to provide a light emitting module having high luminance or high luminous intensity.

  In order to solve the above problems, a light emitting module according to an aspect of the present invention includes a light emitting element, a transparent light wavelength conversion member that converts the wavelength of light emitted from the light emitting element and emits the light from an emission surface, and a light wavelength conversion member. From the light wavelength conversion member provided so as to be in contact with the light exit surface having a refractive index lower than that of the light wavelength conversion member and in contact with both the light emission surface and the light wavelength conversion member. And an intermediate member having a low refractive index. The intermediate member has a lower refractive index than the output layer.

  For example, when a certain first member and a second member having a lower refractive index than the first member are in contact with each other, the lower the difference in the refractive index, the more the first member changes to the second member. Light is easy to travel. According to this aspect, first, by providing such an intermediate member between the light emitting element and the light wavelength conversion member, both of the cases where the incident surface of the light wavelength conversion member is directly bonded to the emission surface of the light emitting element. The difference in refractive index between members can be reduced compared to the difference in refractive index between the members. For this reason, the light emitted from the light emitting element can be easily incident on the light wavelength conversion member. In addition, since the intermediate member has a lower refractive index than that of the emission layer, it is possible to facilitate light from the light wavelength conversion member to the emission layer rather than the intermediate member. Thus, the extraction efficiency of light emitted from the light emitting element can be improved by combining the intermediate member and the emission layer.

  Concavities and convexities may be formed on both the exit surface of the light emitting element and the entrance surface of the intermediate member that are in contact with each other.

  Light traveling inside a member cannot be emitted from the member when the emission angle from the inside of the member exceeds a certain outputable angle, is reflected at the boundary surface with the outside, and again enters the inside of the member. move on. According to this aspect, even when light is reflected without being emitted from the inner surface of the convex portion of the light emitting element, the possibility that the light travels toward another inner surface of the convex portion can be increased. . Thus, the light reflected toward the other inner surface of the convex portion can be emitted to the intermediate member within the range of the emission possible angle. For this reason, compared with the case where such an unevenness | corrugation is not formed, it becomes possible to increase the light which injects into an intermediate member from a light emitting element, and it becomes possible to raise the brightness | luminance or luminous intensity of a light emitting module.

  Concavities and convexities may be formed on both the incident surface of the light wavelength conversion member and the exit surface of the intermediate member that are in contact with each other.

  According to this aspect, even when light cannot be emitted from the inner surface of the convex portion of the exit surface of the intermediate member and is reflected, the possibility that the light travels toward another inner surface of the convex portion can be increased. . In this way, the light reflected toward the other inner surface of the convex portion can be emitted to the light wavelength conversion member within the range of the emission possible angle. For this reason, compared with the case where such unevenness | corrugation is not formed, it becomes possible to increase the light which injects into an optical wavelength conversion member from an intermediate member, and it becomes possible to raise the brightness | luminance or luminous intensity of a light emitting module.

  The emission layer may be further provided on a side end surface between the emission surface and the incident surface of the light wavelength conversion member.

  The emission layer may be formed by laminating a plurality of layers. The plurality of layers may be laminated so that the refractive index of each layer gradually decreases as it approaches the exit surface.

  Another aspect of the present invention is a lamp unit. The lamp unit includes a light emitting element, a transparent light wavelength converting member that converts the wavelength of light emitted from the light emitting element and emits the light from the emitting surface, and an optical wavelength converting member that is provided in contact with the emitting surface of the light wavelength converting member. Light emitting module having an emission layer having a lower refractive index than the light emitting element and an intermediate member having a refractive index lower than that of the light wavelength conversion member provided so as to be in contact with both the emission surface of the light emitting element and the light incident surface of the light wavelength conversion member And an optical member that collects the light emitted from the light emitting module. The intermediate member has a lower refractive index than the output layer.

  According to this aspect, the lamp unit can be configured using the light emitting module in which the extraction efficiency of light emitted from the light emitting element is improved by combining the intermediate member and the emission layer. Therefore, it is possible to provide a lamp unit having a high luminous intensity or luminance.

  According to the present invention, it is possible to provide a light emitting module with high luminance or high luminous intensity.

It is sectional drawing which shows the structure of the vehicle headlamp which concerns on 1st Embodiment. It is a figure which shows the structure of the light emitting module board | substrate which concerns on 1st Embodiment. It is a figure which shows the structure of the light emitting module which concerns on 1st Embodiment. It is a figure which shows the structure of the light emitting module which concerns on 2nd Embodiment.

  Hereinafter, embodiments of the present invention (hereinafter referred to as embodiments) will be described in detail with reference to the drawings.

  FIG. 1 is a cross-sectional view showing a configuration of a vehicle headlamp 10 according to the first embodiment. The vehicle headlamp 10 includes a lamp body 12, a front cover 14, and a lamp unit 16. Hereinafter, the left side in FIG. 1 will be described as the front of the lamp, and the right side will be described as the rear of the lamp. Further, the right side of the lamp in front of the lamp is called the right side of the lamp, and the left side is called the lamp left side. FIG. 1 shows a cross section of a vehicle headlamp 10 cut by a vertical plane including the optical axis of the lamp unit 16 as viewed from the left side of the lamp. When the vehicle headlamp 10 is mounted on the vehicle, the vehicle headlamps 10 formed symmetrically with each other are provided on the vehicle left front and right front, respectively. FIG. 1 shows the configuration of the left or right vehicle headlamp 10.

  The lamp body 12 is formed in a box shape having an opening. The front cover 14 is formed in a bowl shape with a translucent resin or glass. The front cover 14 has an edge attached to the opening of the lamp body 12. In this way, a lamp chamber is formed in an area covered by the lamp body 12 and the front cover 14.

  A lamp unit 16 is disposed in the lamp chamber. The lamp unit 16 is fixed to the lamp body 12 by an aiming screw 18. The lower aiming screw 18 is configured to rotate when the leveling actuator 20 is operated. For this reason, it is possible to move the optical axis of the lamp unit 16 in the vertical direction by operating the leveling actuator 20.

  The lamp unit 16 includes a projection lens 30, a support member 32, a reflector 34, a bracket 36, a light emitting module substrate 38, and heat radiating fins 42. The projection lens 30 is a plano-convex aspheric lens having a convex front surface and a flat rear surface, and projects a light source image formed on the rear focal plane as a reverse image to the front of the lamp. The support member 32 supports the projection lens 30. A light emitting module 40 is provided on the light emitting module substrate 38. The reflector 34 reflects light from the light emitting module 40 and forms a light source image on the rear focal plane of the projection lens 30. Thus, the reflector 34 and the projection lens 30 function as an optical member that condenses the light emitted from the light emitting module 40 toward the front of the lamp. The radiation fins 42 are attached to the rear surface of the bracket 36 and mainly radiate heat generated by the light emitting module 40.

  The support member 32 is formed with a shade 32a. The vehicle headlamp 10 is used as a low beam light source, and the shade 32a blocks a part of the light emitted from the light emitting module 40 and reflected by the reflector 34, so that the cut-off line in the low beam light distribution pattern in front of the vehicle. Form. Since the low beam light distribution pattern is known, the description thereof is omitted.

  FIG. 2 is a diagram illustrating a configuration of the light emitting module substrate 38 according to the first embodiment. The light emitting module substrate 38 includes a light emitting module 40, a substrate 44, and a transparent cover 46. The substrate 44 is a printed wiring board, and the light emitting module 40 is attached to the upper surface. The light emitting module 40 is covered with a colorless transparent cover 46.

  FIG. 3 is a diagram illustrating a configuration of the light emitting module 40 according to the first embodiment. The light emitting module 40 includes an element mounting substrate 48, a reflective base 50, a semiconductor light emitting element 52, and a ceramic unit 56.

The element mounting substrate 48 is formed in a plate shape with a material having high thermal conductivity such as AIN, SiC, Ai ₂ O ₃ , and Si. The reflective substrate 50 is formed in a shape in which a through hole 50a is provided at the center of a rectangular parallelepiped member. The inner surface of the through hole 50a is mirror-finished by depositing or sputtering aluminum or silver so that light is reflected.

  The semiconductor light emitting element 52 is configured by an LED element. In the first embodiment, a blue LED that mainly emits light having a blue wavelength is employed as the semiconductor light emitting element 52. Specifically, the semiconductor light emitting element 52 is configured by a GaN-based LED element formed by crystal growth of a GaN-based semiconductor layer on a sapphire substrate. The semiconductor light emitting element 52 is formed as a 1 mm square chip, for example, and is provided so that the center wavelength of the emitted blue light is 460 nm. Of course, the configuration of the semiconductor light emitting element 52 and the wavelength of the emitted light are not limited to those described above.

  The ceramic unit 56 includes a light wavelength conversion member 58 and a low refractive index layer 60. The light wavelength conversion member 58 is formed by dicing a material composed of a light wavelength conversion member formed in a plate shape with a thickness of 50 μm or more and less than 1000 μm so that the size is, for example, 5% or more and 10% or less larger than the semiconductor light emitting element 52. It is formed by. Of course, the size of the light wavelength conversion member 58 is not limited to this. For example, the light wavelength conversion member 58 may be diced to the same size as the semiconductor light emitting element 52. Further, the light wavelength conversion member 58 may be diced larger than the semiconductor light emitting element 52 by more than 10%, or diced so that the size is larger than zero and smaller than 5%.

  The light wavelength conversion member 58 is a so-called luminescent ceramic or fluorescent ceramic, and sinters a ceramic substrate made of YAG (Yttrium Aluminum Garnet) powder, which is a phosphor excited by blue light. Can be obtained. Since the manufacturing method of such a light wavelength conversion member is well-known, detailed description is abbreviate | omitted. The light wavelength conversion member 58 thus obtained has the characteristics that, unlike, for example, a powdered phosphor, light diffusion on the powder surface can be suppressed, and the loss of light emitted from the semiconductor light emitting device 52 is very small.

  The light wavelength conversion member 58 converts the wavelength of blue light mainly emitted from the semiconductor light emitting element 52 incident from the incident surface 58a and emits yellow light from the emission surface 58b. For this reason, from the light emitting module 40, the synthetic | combination light of the blue light which permeate | transmitted the light wavelength conversion member 58 as it is, and the yellow light by which the wavelength was converted by the light wavelength conversion member 58 radiate | emits from the output surface 58b. In this way, white light can be emitted from the light emitting module 40.

  The light wavelength conversion member 58 is transparent. In the first embodiment, “transparent” means that the total light transmittance in the converted light wavelength region is 40% or more. As a result of the inventor's earnest research and development, as long as the total light transmittance in the converted light wavelength region is 40% or more in a transparent state, the wavelength of light by the light wavelength conversion member 58 can be appropriately converted and the light wavelength conversion can be performed. It has been found that a decrease in the intensity of light passing through the member 58 can be appropriately suppressed. Therefore, the light emitted from the semiconductor light emitting element 52 can be more efficiently converted by making the light wavelength conversion member 58 transparent.

  Further, the light wavelength conversion member 58 is made of a binderless inorganic material, and the durability is improved as compared with the case where an organic material such as a binder is contained. For this reason, for example, it is possible to supply 1 W (watt) or more of power to the light emitting module 40, and it is possible to increase the luminance and luminous intensity of the light emitted from the light emitting module 40.

  The semiconductor light emitting element 52 may be one that mainly emits light having a wavelength other than blue. Also in this case, as the light wavelength conversion member 58, one that converts the wavelength of the main light emitted from the semiconductor light emitting element 52 is employed. In this case, the wavelength of the light emitted from the semiconductor light emitting element 52 is changed so that the light wavelength conversion member 58 becomes light having a wavelength of white or a color close to white when combined with light having a wavelength mainly emitted from the semiconductor light emitting element 52. May be converted.

  The low refractive index layer 60 is formed by coating the surface excluding the incident surface 58a of the light wavelength conversion member 58, that is, the exit surface 58b and the side end surface. The low refractive index layer 60 is provided so as to be in contact with the emission surface 58 b of the light wavelength conversion member 58 and functions as an emission layer that emits light incident from the light wavelength conversion member 58. The low refractive index layer 60 is formed by coating a plurality of layers having different refractive indexes. Specifically, first, the incident surface 58a of the light wavelength conversion member 58 is masked, and a transparent material whose refractive index is slightly lower than that of the light wavelength conversion member 58 is coated. Next, another transparent material whose refractive index is slightly lower than that of the transparent material coated immediately before is coated thereon. Thus, the low refractive index layer 60 is formed so that the refractive index of each layer gradually decreases from the incident surface 60a to the output surface 60b of the low refractive index layer 60. After the coating of all the layers is completed, the masking of the light wavelength conversion member 58 is removed and the ceramic unit 56 is provided.

  For example, when a certain first member and a second member having a lower refractive index than the first member are in contact with each other, the lower the difference in the refractive index, the lower the difference between the first member and the second member. It is known that light is easily reflected from the first member to the second member due to suppression of light reflection between the first member and the second member. Thus, by coating the light wavelength conversion member 58 with the low refractive index layer 60 composed of a plurality of layers whose refractive index gradually decreases, it is possible to avoid passing light between members having a large difference in refractive index. The light extraction efficiency can be improved as compared with the case where the low refractive index layer 60 is not provided.

  The intermediate member 62 is provided between the light emitting surface 52a of the semiconductor light emitting element 52 and the light incident surface 58a of the light wavelength conversion member 58 so as to be in contact with both. In the intermediate member 62, a portion in contact with the emission surface 52 a of the semiconductor light emitting element 52 becomes the incident surface 62 a, and a portion in contact with the incident surface 58 a of the light wavelength conversion member 58 becomes the emission surface 62 b.

  The intermediate member 62 is formed of a material having a refractive index lower than that of the light wavelength conversion member 58 so that light emitted from the semiconductor light emitting element 52 can smoothly enter the light wavelength conversion member 58. The intermediate member 62 is formed, for example, by solidifying a viscous or flexible material such as an adhesive after being sandwiched between the emission surface 52 a of the semiconductor light emitting element 52 and the incident surface of the light wavelength conversion member 58. . As the intermediate member 62, a material excellent in light resistance such as silicone, sol-gel silica, fluorine, and inorganic glass may be used. Thus, by providing the intermediate member 62 between the semiconductor light emitting element 52 and the light wavelength conversion member 58, the incident surface 58a of the light wavelength conversion member 58 is directly bonded to the emission surface 52a of the semiconductor light emitting element 52. Compared with the difference in refractive index between the two, the difference in refractive index between members in contact with each other can be reduced. For this reason, the reflection in the middle of the light emitted from the semiconductor light emitting element 52 can be suppressed, and the light can be easily incident on the light wavelength conversion member 58.

  Furthermore, in the first embodiment, the intermediate member 62 has a refractive index lower than that of the low refractive index layer 60 that is in direct contact with the light wavelength conversion member 58 (hereinafter referred to as “contact layer”). Thereby, the difference in refractive index between the light wavelength conversion member 58 and the intermediate member 62 can be made larger than the difference in refractive index between the light wavelength conversion member 58 and the contact layer of the low refractive index layer 60. For this reason, the light passing through the inside of the light wavelength conversion member 58 can be more easily advanced to the low refractive index layer 60 than the intermediate member 62, and the light extraction efficiency can be improved.

  Further, in the first embodiment, as shown in FIG. 3, irregularities are formed on both the emission surface 52 a of the semiconductor light emitting element 52 and the incident surface 62 a of the intermediate member 62 that are in contact with each other. This makes it possible to increase the light incident on the intermediate member 62 from the semiconductor light emitting element 52 and improve the extraction efficiency of the light emitted from the semiconductor light emitting element 52, compared to the case where such unevenness is not formed. it can.

  In addition, the unevenness | corrugation may be formed in both the output surface 52a of the semiconductor light-emitting element 52 and the entrance surface 62a of the intermediate member 62 which contact | connect mutually so that the repetition period of this unevenness | corrugation may be 100 micrometers or less. As a result of earnest research and development by the inventor, it has been found that the light extraction efficiency can be further improved by forming irregularities having such a repeating period. Therefore, it becomes possible to provide the light emitting module 40 with high luminance or luminous intensity.

  When manufacturing the light emitting module 40, first, the reflective base 50 is fixed to the element mounting substrate 48 by bonding or the like. Next, the semiconductor light emitting element 52 is disposed inside the through hole 50a of the reflecting substrate 50 so that the light emitting surface 52a is on the upper side, and is bonded to the element mounting substrate 48 via the gold bumps 54, thereby flip chip. Implement the implementation. At this time, the semiconductor light emitting element 52 is arranged such that the emission surface 52a as the upper surface is the same height as the upper surface of the reflective base 50 or a slightly lower height.

  Next, the intermediate member 62 is applied to the incident surface 58 a of the light wavelength conversion member 58 or the emission surface 52 a of the semiconductor light emitting element 52, and the incident surface 58 a of the light wavelength conversion member 58 and the emission surface 52 a of the semiconductor light emitting element 52 are formed. The ceramic unit 56 is attached above the semiconductor light emitting element 52 so as to face each other. Since the plate-like light wavelength conversion member 58 is used in the first embodiment, for example, the light wavelength conversion member 58 is easily handled as compared with a case where a powdery light wavelength conversion member is stacked above the semiconductor light emitting element 52. Thus, the light emitting module 40 can be easily manufactured. Thus, the semiconductor light emitting element 52, the intermediate member 62, and the light wavelength conversion member 58 are arranged so that the light emitted from the semiconductor light emitting element 52 enters the incident surface 58 a of the light wavelength conversion member 58 through the intermediate member 62. .

(Second Embodiment)
FIG. 4 is a diagram illustrating a configuration of the light emitting module 40 according to the second embodiment. The configuration of the vehicular headlamp is the same as that of the first embodiment except that a light emitting module 80 is provided instead of the light emitting module 40. Hereinafter, the same parts as those in the first embodiment are denoted by the same reference numerals and description thereof is omitted.

  The light emitting module 80 is configured in the same manner as the light emitting module 40 according to the first embodiment except that a ceramic unit 82 is provided instead of the ceramic unit 56 and an intermediate member 86 is provided instead of the intermediate member 62. As in the first embodiment, the light emitting module 80 has irregularities formed on both the emission surface 52a of the semiconductor light emitting element 52 and the incident surface 86a of the intermediate member 86 that are in contact with each other. The ceramic unit 82 includes a light wavelength conversion member 84 and a low refractive index layer 60. The low refractive index layer 60 is formed by coating the surface excluding the incident surface 84a of the light wavelength conversion member 84, that is, the exit surface 84b and the side end surface. The material of the light wavelength conversion member 84 is the same as that of the light wavelength conversion member 58 according to the first embodiment, and the material of the intermediate member 86 is the same as that of the intermediate member 62 according to the first embodiment.

  In the second embodiment, as shown in FIG. 4, irregularities are formed on both the incident surface 58 a of the optical wavelength conversion member 58 and the exit surface 86 b of the intermediate member 86 that are in contact with each other. Accordingly, it is possible to increase the light incident on the light wavelength conversion member 84 from the intermediate member 86 as compared with the case where such unevenness is not formed, and the emission surface 86b of the intermediate member 86 and the light wavelength conversion member 84 can be increased. Light that cannot enter the light wavelength conversion member 84 due to reflection by the incident surface 84a can be reduced.

  In addition, the unevenness | corrugation may be formed in both the entrance plane 58a of the optical wavelength conversion member 58 and the output surface 86b of the intermediate member 86 which mutually contact so that the repetition period of this unevenness may be 100 micrometers or less. As a result of earnest research and development by the inventor, it has been found that the light extraction efficiency can be further improved by forming irregularities having such a repeating period. Therefore, it becomes possible to provide the light emitting module 40 with high luminance or luminous intensity.

  The present invention is not limited to the above-described embodiments, and an appropriate combination of the elements of each embodiment is also effective as an embodiment of the present invention. Various modifications such as design changes can be added to each embodiment based on the knowledge of those skilled in the art, and embodiments to which such modifications are added can also be included in the scope of the present invention.

  DESCRIPTION OF SYMBOLS 10 Vehicle headlamp, 16 Lamp unit, 40 Light emitting module, 52 Semiconductor light emitting element, 52a Emission surface, 56 Ceramic unit, 58 Light wavelength conversion member, 58a Incident surface, 58b Emission surface, 60 Low refractive index layer, 60a Incident Surface, 60b exit surface, 62 intermediate member, 62a entrance surface, 62b exit surface, 80 light emitting module, 82 ceramic unit, 84 light wavelength conversion member, 84a entrance surface, 84b exit surface, 86 intermediate member, 86a entrance surface, 86b exit surface.

  According to the present invention, it is possible to provide a light emitting module with high luminance or high luminous intensity.

Claims (6)

A light emitting element;
A transparent light wavelength conversion member that converts the wavelength of light emitted from the light emitting element and emits the light from the emission surface;
An exit layer provided in contact with the exit surface of the light wavelength conversion member, and having a lower refractive index than the light wavelength conversion member;
An intermediate member having a refractive index lower than that of the light wavelength conversion member, provided so as to be in contact with both the emission surface of the light emitting element and the incident surface of the light wavelength conversion member;
With
The light emitting module, wherein the intermediate member has a refractive index lower than that of the light emitting layer.   2. The light emitting module according to claim 1, wherein unevenness is formed on both an emission surface of the light emitting element and an incident surface of the intermediate member that are in contact with each other.   3. The light emitting module according to claim 1, wherein unevenness is formed on both an incident surface of the light wavelength conversion member and an output surface of the intermediate member that are in contact with each other.   The light emitting module according to any one of claims 1 to 3, wherein the emission layer is further provided on a side end surface between the emission surface and the incident surface of the light wavelength conversion member. The emission layer is formed by laminating a plurality of layers,
The light emitting module according to any one of claims 1 to 4, wherein the plurality of layers are stacked so that the refractive index of each layer gradually decreases as the layers approach the exit surface. More than the light wavelength conversion member provided so as to be in contact with the light emitting element, the transparent light wavelength conversion member that converts the wavelength of light emitted from the light emitting element and emits the light from the light emission surface, and the light emission surface of the light wavelength conversion member Light emission comprising: an emission layer having a low refractive index; and an intermediate member having a refractive index lower than that of the light wavelength conversion member provided so as to be in contact with both the emission surface of the light emitting element and the incidence surface of the light wavelength conversion member Module,
An optical member for collecting the light emitted from the light emitting module;
With
The lamp unit according to claim 1, wherein the intermediate member has a refractive index lower than that of the emission layer.

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