JPWO2009116393A1 - 高誘電性フィルム形成用のコーティング組成物および高誘電性フィルム - Google Patents
高誘電性フィルム形成用のコーティング組成物および高誘電性フィルム Download PDFInfo
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- JPWO2009116393A1 JPWO2009116393A1 JP2010503824A JP2010503824A JPWO2009116393A1 JP WO2009116393 A1 JPWO2009116393 A1 JP WO2009116393A1 JP 2010503824 A JP2010503824 A JP 2010503824A JP 2010503824 A JP2010503824 A JP 2010503824A JP WO2009116393 A1 JPWO2009116393 A1 JP WO2009116393A1
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- Prior art keywords
- high dielectric
- film
- resin
- dielectric film
- coating composition
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- 239000008199 coating composition Substances 0.000 title claims abstract description 33
- BQCIDUSAKPWEOX-UHFFFAOYSA-N 1,1-Difluoroethene Chemical compound FC(F)=C BQCIDUSAKPWEOX-UHFFFAOYSA-N 0.000 claims abstract description 51
- 239000011347 resin Substances 0.000 claims abstract description 45
- 229920005989 resin Polymers 0.000 claims abstract description 45
- 239000010954 inorganic particle Substances 0.000 claims abstract description 27
- 239000003990 capacitor Substances 0.000 claims abstract description 18
- 239000002904 solvent Substances 0.000 claims abstract description 15
- 239000012461 cellulose resin Substances 0.000 claims abstract description 13
- 229910052751 metal Inorganic materials 0.000 claims description 37
- 239000002184 metal Substances 0.000 claims description 32
- 229920002678 cellulose Polymers 0.000 claims description 15
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- 229920002301 cellulose acetate Polymers 0.000 claims description 13
- 230000000737 periodic effect Effects 0.000 claims description 13
- BFKJFAAPBSQJPD-UHFFFAOYSA-N tetrafluoroethene Chemical group FC(F)=C(F)F BFKJFAAPBSQJPD-UHFFFAOYSA-N 0.000 claims description 11
- 239000000758 substrate Substances 0.000 claims description 8
- 229910002113 barium titanate Inorganic materials 0.000 claims description 7
- JRPBQTZRNDNNOP-UHFFFAOYSA-N barium titanate Chemical compound [Ba+2].[Ba+2].[O-][Ti]([O-])([O-])[O-] JRPBQTZRNDNNOP-UHFFFAOYSA-N 0.000 claims description 7
- VEALVRVVWBQVSL-UHFFFAOYSA-N strontium titanate Chemical compound [Sr+2].[O-][Ti]([O-])=O VEALVRVVWBQVSL-UHFFFAOYSA-N 0.000 claims description 7
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- 238000004519 manufacturing process Methods 0.000 claims description 6
- 229920000642 polymer Polymers 0.000 claims description 3
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- 229910052749 magnesium Inorganic materials 0.000 description 12
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- NTIZESTWPVYFNL-UHFFFAOYSA-N Methyl isobutyl ketone Chemical compound CC(C)CC(C)=O NTIZESTWPVYFNL-UHFFFAOYSA-N 0.000 description 3
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- 229910021523 barium zirconate Inorganic materials 0.000 description 3
- DQBAOWPVHRWLJC-UHFFFAOYSA-N barium(2+);dioxido(oxo)zirconium Chemical compound [Ba+2].[O-][Zr]([O-])=O DQBAOWPVHRWLJC-UHFFFAOYSA-N 0.000 description 3
- UUAGAQFQZIEFAH-UHFFFAOYSA-N chlorotrifluoroethylene Chemical group FC(F)=C(F)Cl UUAGAQFQZIEFAH-UHFFFAOYSA-N 0.000 description 3
- 239000011248 coating agent Substances 0.000 description 3
- 239000006185 dispersion Substances 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
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- YLQBMQCUIZJEEH-UHFFFAOYSA-N tetrahydrofuran Natural products C=1C=COC=1 YLQBMQCUIZJEEH-UHFFFAOYSA-N 0.000 description 3
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- 238000003466 welding Methods 0.000 description 3
- MIZLGWKEZAPEFJ-UHFFFAOYSA-N 1,1,2-trifluoroethene Chemical group FC=C(F)F MIZLGWKEZAPEFJ-UHFFFAOYSA-N 0.000 description 2
- DJOYTAUERRJRAT-UHFFFAOYSA-N 2-(n-methyl-4-nitroanilino)acetonitrile Chemical compound N#CCN(C)C1=CC=C([N+]([O-])=O)C=C1 DJOYTAUERRJRAT-UHFFFAOYSA-N 0.000 description 2
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- QTBSBXVTEAMEQO-UHFFFAOYSA-M Acetate Chemical compound CC([O-])=O QTBSBXVTEAMEQO-UHFFFAOYSA-M 0.000 description 2
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- OYPRJOBELJOOCE-UHFFFAOYSA-N Calcium Chemical compound [Ca] OYPRJOBELJOOCE-UHFFFAOYSA-N 0.000 description 2
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 2
- 239000004721 Polyphenylene oxide Substances 0.000 description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- PPBRXRYQALVLMV-UHFFFAOYSA-N Styrene Chemical compound C=CC1=CC=CC=C1 PPBRXRYQALVLMV-UHFFFAOYSA-N 0.000 description 2
- HCHKCACWOHOZIP-UHFFFAOYSA-N Zinc Chemical compound [Zn] HCHKCACWOHOZIP-UHFFFAOYSA-N 0.000 description 2
- 239000012298 atmosphere Substances 0.000 description 2
- 229910052790 beryllium Inorganic materials 0.000 description 2
- AOWKSNWVBZGMTJ-UHFFFAOYSA-N calcium titanate Chemical compound [Ca+2].[O-][Ti]([O-])=O AOWKSNWVBZGMTJ-UHFFFAOYSA-N 0.000 description 2
- 238000011437 continuous method Methods 0.000 description 2
- 238000000151 deposition Methods 0.000 description 2
- LZCLXQDLBQLTDK-UHFFFAOYSA-N ethyl 2-hydroxypropanoate Chemical compound CCOC(=O)C(C)O LZCLXQDLBQLTDK-UHFFFAOYSA-N 0.000 description 2
- 238000007756 gravure coating Methods 0.000 description 2
- 230000006872 improvement Effects 0.000 description 2
- WABPQHHGFIMREM-UHFFFAOYSA-N lead(0) Chemical compound [Pb] WABPQHHGFIMREM-UHFFFAOYSA-N 0.000 description 2
- 239000001923 methylcellulose Substances 0.000 description 2
- 235000010981 methylcellulose Nutrition 0.000 description 2
- FDPIMTJIUBPUKL-UHFFFAOYSA-N pentan-3-one Chemical compound CCC(=O)CC FDPIMTJIUBPUKL-UHFFFAOYSA-N 0.000 description 2
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 2
- 239000003495 polar organic solvent Substances 0.000 description 2
- 229920000728 polyester Polymers 0.000 description 2
- 229920000570 polyether Polymers 0.000 description 2
- 229920000098 polyolefin Polymers 0.000 description 2
- 239000012763 reinforcing filler Substances 0.000 description 2
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- 229910052725 zinc Inorganic materials 0.000 description 2
- 239000011701 zinc Substances 0.000 description 2
- LNAZSHAWQACDHT-XIYTZBAFSA-N (2r,3r,4s,5r,6s)-4,5-dimethoxy-2-(methoxymethyl)-3-[(2s,3r,4s,5r,6r)-3,4,5-trimethoxy-6-(methoxymethyl)oxan-2-yl]oxy-6-[(2r,3r,4s,5r,6r)-4,5,6-trimethoxy-2-(methoxymethyl)oxan-3-yl]oxyoxane Chemical compound CO[C@@H]1[C@@H](OC)[C@H](OC)[C@@H](COC)O[C@H]1O[C@H]1[C@H](OC)[C@@H](OC)[C@H](O[C@H]2[C@@H]([C@@H](OC)[C@H](OC)O[C@@H]2COC)OC)O[C@@H]1COC LNAZSHAWQACDHT-XIYTZBAFSA-N 0.000 description 1
- BHSXLOMVDSFFHO-UHFFFAOYSA-N (3-ethylsulfanylphenyl)methanamine Chemical compound CCSC1=CC=CC(CN)=C1 BHSXLOMVDSFFHO-UHFFFAOYSA-N 0.000 description 1
- RYHBNJHYFVUHQT-UHFFFAOYSA-N 1,4-Dioxane Chemical compound C1COCCO1 RYHBNJHYFVUHQT-UHFFFAOYSA-N 0.000 description 1
- WZTUZRFSDWXDRM-IAGOJMRCSA-N 1-[(3s,8r,9s,10r,13s,14s,17r)-6-chloro-3,17-dihydroxy-10,13-dimethyl-1,2,3,8,9,11,12,14,15,16-decahydrocyclopenta[a]phenanthren-17-yl]ethanone Chemical compound C1=C(Cl)C2=C[C@@H](O)CC[C@]2(C)[C@@H]2[C@@H]1[C@@H]1CC[C@@](C(=O)C)(O)[C@@]1(C)CC2 WZTUZRFSDWXDRM-IAGOJMRCSA-N 0.000 description 1
- CJWNFAKWHDOUKL-UHFFFAOYSA-N 2-(2-phenylpropan-2-yl)phenol Chemical compound C=1C=CC=C(O)C=1C(C)(C)C1=CC=CC=C1 CJWNFAKWHDOUKL-UHFFFAOYSA-N 0.000 description 1
- OEPOKWHJYJXUGD-UHFFFAOYSA-N 2-(3-phenylmethoxyphenyl)-1,3-thiazole-4-carbaldehyde Chemical compound O=CC1=CSC(C=2C=C(OCC=3C=CC=CC=3)C=CC=2)=N1 OEPOKWHJYJXUGD-UHFFFAOYSA-N 0.000 description 1
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- BVKZGUZCCUSVTD-UHFFFAOYSA-L Carbonate Chemical compound [O-]C([O-])=O BVKZGUZCCUSVTD-UHFFFAOYSA-L 0.000 description 1
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- OIFBSDVPJOWBCH-UHFFFAOYSA-N Diethyl carbonate Chemical compound CCOC(=O)OCC OIFBSDVPJOWBCH-UHFFFAOYSA-N 0.000 description 1
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- ZZSNKZQZMQGXPY-UHFFFAOYSA-N Ethyl cellulose Chemical compound CCOCC1OC(OC)C(OCC)C(OCC)C1OC1C(O)C(O)C(OC)C(CO)O1 ZZSNKZQZMQGXPY-UHFFFAOYSA-N 0.000 description 1
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- NJLLQSBAHIKGKF-UHFFFAOYSA-N dipotassium dioxido(oxo)titanium Chemical compound [K+].[K+].[O-][Ti]([O-])=O NJLLQSBAHIKGKF-UHFFFAOYSA-N 0.000 description 1
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- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 1
- 229910010271 silicon carbide Inorganic materials 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
- 239000002356 single layer Substances 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- 239000006104 solid solution Substances 0.000 description 1
- 238000004528 spin coating Methods 0.000 description 1
- 238000005507 spraying Methods 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- 229940071182 stannate Drugs 0.000 description 1
- CIOAGBVUUVVLOB-UHFFFAOYSA-N strontium atom Chemical compound [Sr] CIOAGBVUUVVLOB-UHFFFAOYSA-N 0.000 description 1
- 230000003746 surface roughness Effects 0.000 description 1
- 238000010345 tape casting Methods 0.000 description 1
- 230000008685 targeting Effects 0.000 description 1
- 229920002803 thermoplastic polyurethane Polymers 0.000 description 1
- 229920005992 thermoplastic resin Polymers 0.000 description 1
- 229920001187 thermosetting polymer Polymers 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
- FHWAGNWFJRJDBG-UHFFFAOYSA-N trimagnesium distiborate Chemical compound [Mg+2].[Mg+2].[Mg+2].[O-][Sb]([O-])([O-])=O.[O-][Sb]([O-])([O-])=O FHWAGNWFJRJDBG-UHFFFAOYSA-N 0.000 description 1
- NQPDZGIKBAWPEJ-UHFFFAOYSA-N valeric acid Chemical compound CCCCC(O)=O NQPDZGIKBAWPEJ-UHFFFAOYSA-N 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
- H01G4/00—Fixed capacitors; Processes of their manufacture
- H01G4/002—Details
- H01G4/018—Dielectrics
- H01G4/20—Dielectrics using combinations of dielectrics from more than one of groups H01G4/02 - H01G4/06
- H01G4/206—Dielectrics using combinations of dielectrics from more than one of groups H01G4/02 - H01G4/06 inorganic and synthetic material
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01B—CABLES; CONDUCTORS; INSULATORS; SELECTION OF MATERIALS FOR THEIR CONDUCTIVE, INSULATING OR DIELECTRIC PROPERTIES
- H01B3/00—Insulators or insulating bodies characterised by the insulating materials; Selection of materials for their insulating or dielectric properties
- H01B3/18—Insulators or insulating bodies characterised by the insulating materials; Selection of materials for their insulating or dielectric properties mainly consisting of organic substances
- H01B3/30—Insulators or insulating bodies characterised by the insulating materials; Selection of materials for their insulating or dielectric properties mainly consisting of organic substances plastics; resins; waxes
- H01B3/32—Insulators or insulating bodies characterised by the insulating materials; Selection of materials for their insulating or dielectric properties mainly consisting of organic substances plastics; resins; waxes natural resins
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01B—CABLES; CONDUCTORS; INSULATORS; SELECTION OF MATERIALS FOR THEIR CONDUCTIVE, INSULATING OR DIELECTRIC PROPERTIES
- H01B3/00—Insulators or insulating bodies characterised by the insulating materials; Selection of materials for their insulating or dielectric properties
- H01B3/18—Insulators or insulating bodies characterised by the insulating materials; Selection of materials for their insulating or dielectric properties mainly consisting of organic substances
- H01B3/30—Insulators or insulating bodies characterised by the insulating materials; Selection of materials for their insulating or dielectric properties mainly consisting of organic substances plastics; resins; waxes
- H01B3/44—Insulators or insulating bodies characterised by the insulating materials; Selection of materials for their insulating or dielectric properties mainly consisting of organic substances plastics; resins; waxes vinyl resins; acrylic resins
- H01B3/443—Insulators or insulating bodies characterised by the insulating materials; Selection of materials for their insulating or dielectric properties mainly consisting of organic substances plastics; resins; waxes vinyl resins; acrylic resins from vinylhalogenides or other halogenoethylenic compounds
- H01B3/445—Insulators or insulating bodies characterised by the insulating materials; Selection of materials for their insulating or dielectric properties mainly consisting of organic substances plastics; resins; waxes vinyl resins; acrylic resins from vinylhalogenides or other halogenoethylenic compounds from vinylfluorides or other fluoroethylenic compounds
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
- H01G4/00—Fixed capacitors; Processes of their manufacture
- H01G4/002—Details
- H01G4/018—Dielectrics
- H01G4/06—Solid dielectrics
- H01G4/14—Organic dielectrics
- H01G4/18—Organic dielectrics of synthetic material, e.g. derivatives of cellulose
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
- H01G4/00—Fixed capacitors; Processes of their manufacture
- H01G4/33—Thin- or thick-film capacitors
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- Spectroscopy & Molecular Physics (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Inorganic Chemistry (AREA)
- Chemical & Material Sciences (AREA)
- Inorganic Insulating Materials (AREA)
- Compositions Of Macromolecular Compounds (AREA)
- Fixed Capacitors And Capacitor Manufacturing Machines (AREA)
- Manufacture Of Macromolecular Shaped Articles (AREA)
- Paints Or Removers (AREA)
Abstract
Description
(A)フッ化ビニリデン系樹脂(a)およびセルロース系樹脂(b)を含むフィルム形成樹脂、
(B)高誘電性無機粒子、および
(C)溶剤
を含む高誘電性フィルム形成用コーティング組成物に関する。
なかでも前記高誘電性無機粒子(B)としては、チタン酸バリウムまたはチタン酸ストロンチウムであることが、さらに誘電率が高い点から好ましい。
フィルム形成樹脂(A)は、VdF系樹脂(a)およびセルロース系樹脂(b)を含む。
VdFの単独重合体(PVdF)のほか、VdFと共重合可能な他の単量体の1種または2種以上との共重合体が例示でき、これらのうち、誘電率が4以上、さらには6以上、なかでも7以上、特に7.5以上のものが、耐電圧、絶縁性、誘電率の向上、さらにはフィルムとしたときの誘電率が高い点から好ましい。
VdF系樹脂(a)の誘電損失の温度依存性、特に高温での温度依存性を低減化するために配合する。
本発明に用いる高誘電性無機粒子としては、高誘電性材料に配合される公知の無機の強誘電性(誘電率が100以上)の材料、たとえば金属酸化物、その複合体、固溶体、ゾルゲル体などの粒子が使用できる。
MaTibOc
(式中、Mは周期表の第2周期から第6周期までの2族金属元素;aは0.9〜1.1;bは0.9〜1.1;cは2.8〜3.2である)
で示される複合酸化物粒子。
M1 aM2 bOc
(式中、M1とM2は異なり、M1は周期表の2族金属元素、M2は周期表の第5周期の金属元素;aは0.9〜1.1;bは0.9〜1.1;cは2.8〜3.2である)
で示される複合酸化物粒子。
チタン酸ジルコン酸鉛、アンチモン酸鉛、チタン酸亜鉛、チタン酸鉛、酸化チタンなどが例示できる。
なかでも前記高誘電性無機粒子(B)としては、式:MaNbO3(式中、Mは2族金属元素;Nは4族金属元素;aは0.9〜1.1;bは0.9〜1.1;MとNはそれぞれ複数であってもよい)で示される無機粒子であることが、誘電率が高い点から好ましい。
2族金属元素Mとしては、Mg、Ca、Sr、Baなどが、4族金属元素NとしてはTi、Zrなどが好ましく例示できる。
溶剤としては、VdF系樹脂(a)およびセルロース系樹脂(b)を溶解する任意の溶媒を使用できるが、特に、極性有機溶媒が好ましい。なかでも極性有機溶媒としては、たとえばケトン系溶剤、エステル系溶媒、カーボネート系溶媒、環状エーテル系溶媒、アミド系溶剤が好ましい。具体的には、メチルエチルケトン、メチルイソブチルケトン、アセトン、ジエチルケトン、ジプロピルケトン、酢酸エチル、酢酸メチル、酢酸プロピル、酢酸ブチル、乳酸エチル、ジメチルカーボネート、ジエチルカーボネート、ジプロピルカーボネート、メチルエチルカーボネート、テトラヒドロフラン、メチルテトラヒドロフラン、ジオキサン、ジメチルホルムアミド、ジメチルアセトアミドなどが好ましくあげられる。
本発明のコーティング組成物には、任意成分として、他の補強用フィラーや親和性向上剤などの添加剤を、本発明の効果を損なわない範囲内で含ませてもよい。
デジタル測長機((株)仙台ニコン製のMF−1001)を用いて、基板に載せたフィルムを室温下にて測定する。
高誘電性フィルムを真空中で両面にアルミニウムを蒸着しサンプルとする。このサンプルをインピーダンスアナライザ(ヒューレットパッカード製のHP4194A)にて、室温(20℃)および80℃下で、周波数100Hz、1kHz、10kHzおよび100kHzでの静電容量と誘電正接を測定する。得られた各静電容量と誘電正接の測定値から比誘電率および誘電損失(%)を算出する。
耐電圧・絶縁抵抗試験器(菊水電子工業(株)TOS9201)を用いて、基板に載せたフィルムをドライエアー雰囲気下にて測定する。昇圧速度は100V/sで測定する。
デジタル超絶縁計/微小電流計にて、20℃での体積抵抗率(Ω・cm)をドライエアー雰囲気下、DC100Vで測定する。
1Lセパラブルフラスコ中にジメチルアセトアミド(DMAc)(キシダ化学(株)製)1600質量部とポリフッ化ビニリデン(PVdF)(ARKEMA社製KAYNAR761)を400質量部入れ、60℃にて3時間、メカニカルスターラーにて攪拌し、20質量%濃度のPVdF溶液を得た。
実施例1において、PVdFと酢酸セルロースとの質量比を表1に示す比率にしたほかは実施例1と同様にして本発明のコーティング組成物および高誘電性フィルムを作製した。
実施例1において、酢酸セルロースを配合せずにPVdFのみを使用したほかは実施例1と同様にして比較用のコーティング組成物および高誘電性フィルムを作製した。
実施例1において、PVdFを配合せずに酢酸セルロースのみを使用したほかは実施例1と同様にして比較用のコーティング組成物および高誘電性フィルムを作製した。
実施例3において、VdF系樹脂としてVdF/TFE(80/20モル%)を用いたほかは実施例3と同様にして本発明のコーティング組成物および高誘電性フィルムを作製した。
実施例3において、VdF系樹脂としてVdF/HFP(88/12モル%)を用いたほかは実施例3と同様にして本発明のコーティング組成物および高誘電性フィルムを作製した。
実施例3において、セルロース系樹脂としてエーテル置換セルロースであるメトローズ(信越化学工業(株)製の60SH03)を用いたほかは実施例3と同様にして本発明のコーティング組成物および高誘電性フィルムを作製した。
実施例3において、酢酸セルロースとしてアセチル化度の異なる酢酸セルロース(ダイセル化学工業(株)製L−70)を用いたほかは同様にして本発明のコーティング組成物および高誘電性フィルムを作製した。
実施例3において、高誘電性無機粒子として表面修飾を施したチタン酸ジルコン酸バリウムカルシウム(日本化学工業(株)製のBCTZ−NTFM)を用いたほかは実施例2と同様にして本発明のコーティング組成物および高誘電性フィルムを作製した。
実施例11において、PVdFとエーテル置換セルロースとの質量比を表3に示す比率にしたほかは実施例11と同様にして本発明のコーティング組成物および高誘電性フィルムを作製した。
実施例3において、高誘電性無機粒子としてジルコン酸ストロンチウム(B2)((株)高純度化学研究所製。実施例17)、高純度酸化チタン(B4)(石原産業(株)製。実施例18)を用いたほかは実施例3と同様にして本発明のコーティング組成物および高誘電性フィルムを作製した。
実施例1で製造した高誘電性フィルムの両面に、真空蒸着装置((株)真空デバイス製のVE−2030)により3Ω/□を目標にしてアルミニウムを蒸着して電極を形成した。これらのアルミニウム電極に電圧印加用のリード線を取り付け、スタンプ型(簡易評価用)のフィルムコンデンサを作製した。
Claims (11)
- (A)フッ化ビニリデン系樹脂(a)およびセルロース系樹脂(b)を含むフィルム形成樹脂、
(B)高誘電性無機粒子、および
(C)溶剤
を含む高誘電性フィルム形成用コーティング組成物。 - 前記フィルム形成樹脂(A)が、フッ化ビニリデン系樹脂(a)/セルロース系樹脂(b)を質量比で0.1/99.9〜99.9/0.1で含む請求項1記載のコーティング組成物。
- 前記セルロース系樹脂(b)が、酢酸セルロースまたはエーテル置換セルロースである請求項1または2記載のコーティング組成物。
- フッ化ビニリデン系樹脂(a)が、フッ化ビニリデン単位60〜100モル%、テトラフルオロエチレン単位0〜40モル%およびヘキサフルオロプロピレン0〜40モル%を含む重合体である請求項1〜3のいずれかに記載のコーティング組成物。
- 前記高誘電性無機粒子(B)が、式:MaNbO3(式中、Mは周期表の2族金属元素;Nは周期表の4族金属元素;aは0.9〜1.1;bは0.9〜1.1;MとNはそれぞれ複数であってもよい)で示される無機粒子である請求項1〜4のいずれかに記載のコーティング組成物。
- 前記高誘電性無機粒子(B)が、チタン酸バリウムまたはチタン酸ストロンチウムである請求項1〜5のいずれかに記載のコーティング組成物。
- 請求項1〜6のコーティング組成物を基材表面にキャストし、乾燥した後、該基材から剥離することを特徴とする高誘電性フィルムの製造方法。
- フッ化ビニリデン系樹脂(a)とセルロース系樹脂(b)を0.1/99.9〜99.9/0.1の質量比で含み、高誘電性無機粒子(B)を(a)+(b)を100質量部としたとき10〜200質量部含む高誘電性フィルム。
- 請求項7記載の製造方法で得られた高誘電性フィルム。
- フィルムコンデンサ用である請求項8または9記載の高誘電性フィルム。
- 請求項8〜10のいずれかに記載の高誘電性フィルムの少なくとも片面に電極層が積層されているフィルムコンデンサ。
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JPH0598069A (ja) * | 1991-10-08 | 1993-04-20 | Ntn Corp | 高誘電性樹脂組成物 |
WO2001078171A1 (en) * | 2000-04-07 | 2001-10-18 | Daikin Industries, Ltd. | Additive for electrode |
JP2003206317A (ja) * | 2001-11-12 | 2003-07-22 | Daikin Ind Ltd | ポリビニリデンフルオライド |
WO2007088924A1 (ja) * | 2006-02-01 | 2007-08-09 | Daikin Industries, Ltd. | 高誘電性フィルム |
JP2008034189A (ja) * | 2006-07-27 | 2008-02-14 | Daikin Ind Ltd | コーティング組成物 |
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JPH0598069A (ja) * | 1991-10-08 | 1993-04-20 | Ntn Corp | 高誘電性樹脂組成物 |
WO2001078171A1 (en) * | 2000-04-07 | 2001-10-18 | Daikin Industries, Ltd. | Additive for electrode |
JP2003206317A (ja) * | 2001-11-12 | 2003-07-22 | Daikin Ind Ltd | ポリビニリデンフルオライド |
WO2007088924A1 (ja) * | 2006-02-01 | 2007-08-09 | Daikin Industries, Ltd. | 高誘電性フィルム |
JP2008034189A (ja) * | 2006-07-27 | 2008-02-14 | Daikin Ind Ltd | コーティング組成物 |
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JP2016044275A (ja) * | 2014-08-26 | 2016-04-04 | 大日精化工業株式会社 | 塗工液、塗工膜、及び複合材料 |
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