JPWO2006085492A1 - Chip parts with electrostatic protection - Google Patents

Abstract

A substrate, a circuit element formed on the substrate, an electrostatic protection element formed in parallel with the circuit element on the substrate, and formed on both ends of the substrate, the circuit element and the protection element It is a chip component with an electrostatic protection function comprising a pair of external electrodes for connection to an external circuit.

Description

  The present invention relates to a chip component with an electrostatic protection function capable of increasing an electrostatic pulse resistance.

  In recent years, electronic devices such as mobile phones have been rapidly reduced in size and performance, and accordingly, circuit elements used in electronic devices have also been rapidly reduced in size. However, with this miniaturization, the insulation distance inside the equipment is shortened, so that static electricity applied to the equipment casing and operation switches can be easily discharged to the signal circuit inside the equipment, Due to the miniaturization of the manufacturing process associated with the miniaturization of the device itself, the conductor inside the circuit element is miniaturized and the current capacity is reduced. Therefore, the electrostatic pulse resistance of electronic devices and circuit elements tends to be reduced. As a result, an electric circuit inside the device is increasingly destroyed by an electrostatic pulse generated when the human body and the terminal of the electronic device come into contact with each other. This is because a high voltage of a pulse width of 1 nanosecond or less and several hundred to several kilovolts is applied to an electric circuit inside the device by an electrostatic pulse.

  In particular, circuit elements such as bypass capacitors, resistors, and RC filters used for noise countermeasures in signal circuits have been reduced in size, and accordingly, electrostatic pulse resistance of these circuit elements has been reduced. And as mentioned above, with the miniaturization of equipment, high voltage noise such as static electricity has invaded into these signal circuits, and the electrostatic pulse resistance of circuit elements has been reduced. There are an increasing number of cases in which circuit elements such as bypass capacitors, resistors, and RC filters are protected from static electricity by antistatic components such as varistors.

  Conventionally, as a countermeasure against static electricity of such circuit elements and peripheral circuits, electrostatic pulsators or capacitors with large electrostatic capacity are connected in parallel with these circuit elements to absorb static electricity or bypass static electricity to ground. The tolerance was secured.

  As prior art document information relating to the invention of this application, for example, Patent Document 1 is known.

  Conventionally, in portable devices such as mobile phones and small devices, as a countermeasure against static electricity, the case and shield plate are securely grounded to release static electricity to the ground and prevent intrusion of static electricity into internal circuits. ing. However, as portable devices become smaller in size, it has become difficult to ground the casing and shield plate. As a result, it is possible to intrude static electricity into the circuit, and as a result, there are an increasing number of cases where parts with low electrostatic pulse resistance are destroyed. For example, a chip-type resistor is manufactured by a simple method of printing a resistor paste on a substrate and firing it, and has a small electrostatic pulse resistance against electrostatic pulses and surge voltages.

Therefore, in order to protect the chip resistor and other devices from static electricity, a varistor or capacitor is connected in parallel to the chip resistor to absorb static electricity or bypass it in many cases. Recently, in addition to communication noise (especially in mobile phones), the influence of harmonic noise on the operating frequency of integrated circuits and unnecessary radiation of electromagnetic waves radiated from the circuit board to the outside has become a problem. Therefore, the need for noise countermeasure parts such as bypass capacitors and RC filters is increasing, so these noise countermeasure parts are often attached to the same signal line as the above-mentioned static electricity countermeasures. . However, if a noise countermeasure component and an electrostatic countermeasure component are separately provided on the same signal line, there is a problem that the cost increases due to an increase in the number of components, and the size of the device increases.
JP-A-8-162303

  SUMMARY OF THE INVENTION The present invention solves the above-described conventional problems, and an object of the present invention is to provide a chip component with an electrostatic protection function capable of increasing an electrostatic pulse resistance while suppressing an increase in the number of components.

  To achieve the above object, a chip component with an electrostatic protection function according to the present invention includes a substrate, a circuit element formed on the substrate, and an electrostatic protection element formed in parallel with the circuit element on the substrate. And a pair of external electrodes formed at both ends of the substrate for connecting the circuit element and the protection element to an external circuit.

The perspective view of the chip component with an electrostatic protection function in Embodiment 1 of this invention 2-2 line sectional drawing in FIG. Equivalent circuit diagram of chip parts with the same electrostatic protection function The perspective view of the chip component with an electrostatic protection function in Embodiment 2 of this invention Cross-sectional view of the chip component with the same electrostatic protection function The perspective view seen from the upper surface side of the chip component with the electrostatic protection function in Embodiment 3 of the present invention The perspective view seen from the back side of the chip part with the same electrostatic protection function Cross-sectional view of the chip component with the same electrostatic protection function The perspective view of the chip component with an electrostatic protection function in Embodiment 4 of this invention Cross-sectional view of the chip component with the same electrostatic protection function Magnified schematic diagram between the extraction electrodes of the chip component with the same electrostatic protection function Equivalent circuit diagram in the enlarged schematic diagram between the extraction electrodes of the chip component with the same electrostatic protection function The perspective view of the chip component with an electrostatic protection function in Embodiment 5 of this invention 14-14 sectional view in FIG. Equivalent circuit diagram of chip parts with the same electrostatic protection function The perspective view of the chip component with an electrostatic protection function in Embodiment 6 of this invention 17-17 sectional view in FIG. Equivalent circuit diagram of chip parts with the same electrostatic protection function Sectional drawing which shows the modification of FIG. Sectional drawing which shows the modification of FIG. Sectional drawing which shows the modification of FIG. The perspective view which shows the modification of FIG. Sectional drawing which shows the modification of FIG. The perspective view which shows the modification of FIG. Sectional drawing which shows the modification of FIG. The perspective view of the chip component with an electrostatic protection function in Embodiment 7 of this invention 27 is a sectional view taken along line 27-27 in FIG. Equivalent circuit diagram of chip parts with the same electrostatic protection function The perspective view of the chip component with an electrostatic protection function in Embodiment 8 of this invention Cross-sectional view of the chip component with the same electrostatic protection function The perspective view seen from the upper surface side of the chip component with the electrostatic protection function in Embodiment 9 of the present invention The perspective view seen from the back side of the chip part with the same electrostatic protection function Cross-sectional view of the chip component with the same electrostatic protection function The perspective view of the chip component with an electrostatic protection function in Embodiment 10 of this invention Cross-sectional view of the chip component with the same electrostatic protection function Magnified schematic diagram between the extraction electrodes of the chip component with the same electrostatic protection function Equivalent circuit diagram in the enlarged schematic diagram between the extraction electrodes of the chip component with the same electrostatic protection function The perspective view of the chip component with an electrostatic protection function in Embodiment 11 of this invention 39 is a sectional view taken along line 39-39 in FIG. Equivalent circuit diagram of chip parts with the same electrostatic protection function The perspective view of the chip component with an electrostatic protection function in Embodiment 12 of this invention 42 is a sectional view taken along line 42-42 in FIG. Equivalent circuit diagram of chip parts with the same electrostatic protection function The perspective view of the chip component with an electrostatic protection function in Embodiment 13 of this invention Equivalent circuit diagram of chip parts with the same electrostatic protection function Circuit diagram showing circuit A as an application example of the chip component with the electrostatic protection function Circuit diagram showing circuit B as an application example of the chip component with the electrostatic protection function The circuit diagram which shows the modification of the chip component with an electrostatic protection function in Embodiment 13 of this invention The circuit diagram which shows the modification of the chip component with an electrostatic protection function in Embodiment 13 of this invention Sectional drawing which shows the modification of FIG. Sectional drawing which shows the modification of FIG. Sectional drawing which shows the modification of FIG. The perspective view which shows the modification of FIG. Sectional drawing which shows the modification of FIG. The perspective view which shows the modification of FIG. Sectional drawing which shows the modification of FIG. Sectional drawing which shows the modification of FIG.

(Embodiment 1)
Hereinafter, a chip resistor with an electrostatic protection function which is an example of a chip component with an electrostatic protection function in Embodiment 1 of the present invention will be described. 1 is a perspective view of a chip resistor with an electrostatic protection function according to Embodiment 1 of the present invention, FIG. 2 is a sectional view taken along line 2-2 in FIG. 1, and FIG. 3 is a chip resistor with an electrostatic protection function shown in FIG. FIG.

  1 and 2, a substrate 1 is a substrate configured using alumina, for example. On one surface of the substrate 1, first and second resistor take-out electrodes 2 and 3 are provided. The resistor 4 is formed by being electrically connected between the first resistor take-out electrode 2 and the second resistor take-out electrode 3. The external electrodes 5 and 6 are a pair of external electrodes formed at both ends of the substrate 1 and electrically connected to the first and second resistor take-out electrodes 2 and 3. The electrostatic protection element 7 is a protection element made of a varistor mainly composed of SiC formed in parallel with the resistor 4 on one surface of the substrate 1. When an overvoltage is applied by, for example, an electrostatic pulse or a surge voltage, Impedance decreases. The electrostatic protection element 7 is electrically connected to a pair of external electrodes 5 and 6 via first and second electrostatic protection element take-out electrodes 8 and 9.

  With the above structure, the resistor 4 and the electrostatic protection element 7 can be formed in parallel on the same substrate 1, so that an equivalent circuit as shown in FIG. 3 can be formed.

  Next, a manufacturing method and electrical characteristics of the chip resistor with electrostatic protection function according to the first embodiment of the present invention will be described.

First, by adding a resin component such as ethyl cellulose and a solvent component such as butyl carbitol to a mixed powder containing RuO ₂ as a main component and adding an appropriate amount of glass frit, kneading using a three-roll roll or the like. A resistor paste is prepared. In the same manner, by adding a resin component such as ethyl cellulose and a solvent component such as butyl carbitol to a mixed powder containing SiC as a main component and adding an appropriate amount of glass frit, kneading using a three roll or the like. An electrostatic protection element paste made of varistor paste is prepared. Furthermore, by adding a resin component such as ethyl cellulose and a solvent component such as butyl carbitol to a mixed powder containing silver as a main component and an appropriate amount of glass frit, the mixture is kneaded using a three-roll roll or the like. Make a paste.

  Next, a silver paste is screen-printed on one surface of the substrate 1 made of alumina and dried at 50 to 150 ° C. for 0.5 to 3 minutes, and then heat-treated at 500 to 900 ° C. for 15 to 180 minutes, A first resistor take-out electrode 2 and a first electrostatic protection element take-out electrode 8 are formed.

  Next, a resistor paste is screen-printed so as to cover a part of the first resistor extraction electrode 2 and dried at 50 to 150 ° C. for 0.5 to 3 minutes. Then, an electrostatic protection element paste is screen-printed so as to cover a part of the first electrostatic protection element take-out electrode 8 and dried at 50 to 150 ° C. for 0.5 to 3 minutes. Thereafter, silver paste for forming the second resistor extraction electrode 3 and the second electrostatic protection element extraction electrode 9 is screen-printed on the dried resistor paste and the electrostatic protection element paste, respectively. Dry at 150 ° C. for 0.5-3 minutes. And the resistor 4, the electrostatic protection element 7, the 2nd resistor extraction electrode 3, and the 2nd electrostatic protection element extraction electrode 9 are formed by heat-processing for 15 to 180 minutes at 500-900 degreeC. In this case, the thickness of the resistor 4 is preferably formed between 20 and 200 μm in order to secure a desired resistance value. Moreover, since the impedance of the electrostatic protection element 7 depends on the thickness, the thickness of the electrostatic protection element 7 is desirably 200 μm or less in order to exhibit a sufficient electrostatic absorption effect.

  Finally, silver, glass frit, organic vehicle or the like is applied to one end of the substrate 1 so as to be electrically joined to one end of the first resistor extraction electrode 2 and the first electrostatic protection element extraction electrode 8. The other end of the substrate 1 is coated with silver, glass frit, so as to be electrically bonded to one end of the second resistor extraction electrode 3 and the second electrostatic protection element extraction electrode 9. Apply paste made of organic vehicle. Thereafter, a pair of external electrodes 5 and 6 were formed by heat treatment at 500 to 900 ° C. for 15 to 180 minutes, and a chip resistor with an electrostatic protection function in Embodiment 1 of the present invention was produced.

  (Table 1) shows the electrostatic test results of the conventional chip resistor and the chip resistor with electrostatic protection function according to the first embodiment of the present invention.

静電気試験条件は国際規格ＩＥＣ６１０００−４−２（人体モデル）に準拠して行った。（表１）から明らかなように、従来例では静電気を２ｋＶ印加した後、及び４ｋＶ印加した後においては、抵抗値が初期値に比べて低下し、そして静電気を８ｋＶ印加した後、１５ｋＶ印加した後においては、抵抗値が初期値に比べて大きく低下するという抵抗値の変化が見られたが、本発明の実施の形態１においては静電気を２ｋＶ印加した後、４ｋＶ印加した後、８ｋＶ印加した後、１５ｋＶ印加した後においても、初期値に比べて抵抗値の変化は見られなかった。

The electrostatic test conditions were performed in accordance with the international standard IEC61000-4-2 (human body model). As is clear from Table 1, in the conventional example, after applying 2 kV of static electricity and after applying 4 kV, the resistance value decreased compared to the initial value, and after applying 8 kV of static electricity, 15 kV was applied. Later, a change in resistance value was observed in which the resistance value greatly decreased compared to the initial value, but in the first embodiment of the present invention, 2 kV was applied, 4 kV was applied, and 8 kV was applied. Later, even after 15 kV was applied, the resistance value did not change compared to the initial value.

  This is because, when static electricity is applied to a conventional chip resistor, the static electricity must pass through a resistor on the circuit, so that the resistance value of a conventional chip resistor that is sensitive to static electricity is lowered. On the other hand, in the chip resistor with electrostatic protection function according to the first embodiment of the present invention, when static electricity is applied, the static electricity bypasses the electrostatic protection element 7 side. This is because no static electricity is applied to the resistor 4 of the chip resistor and the resistance value does not change. This is because the electrostatic protection element 7 is normally open because it has a high impedance. However, when a high voltage of several kV or more is applied due to static electricity, the electrostatic protection element 7 suddenly decreases its impedance and discharges static electricity. It will be preferentially bypassed. Then, since the impedance of the electrostatic protection element 7 is restored and increased again after the static electricity has passed, it is possible to suppress the resistance value of the chip resistor with the electrostatic protection function from changing due to static electricity.

  Thus, by forming the electrostatic protection element 7 in parallel with the resistor 4, static electricity can be bypassed by the electrostatic protection element 7. In order to increase the static electricity bypass effect of the static electricity protection element 7, it is better to lower the impedance of the static electricity protection element 7. Therefore, the thickness of the static electricity protection element 7 is desirably 200 μm or less.

(Embodiment 2)
Hereinafter, a chip resistor with an electrostatic protection function which is an example of a chip component with an electrostatic protection function in the second embodiment will be described. 4 is a perspective view of a chip resistor with an electrostatic protection function according to Embodiment 2 of the present invention, and FIG. 5 is a cross-sectional view of the chip resistor with an electrostatic protection function shown in FIG.

  4 and 5, the substrate 11 is a substrate configured using alumina, for example. First and second extraction electrodes 12 and 13 are provided on one surface of the substrate 11. Further, the resistor 14 is formed by being electrically connected between the first extraction electrode 12 and the second extraction electrode 13, and the first extraction electrode 12, the resistor 14, and the second extraction electrode are formed. The electrode 13, the electrostatic protection element 17, and the third extraction electrode 18 are provided by being laminated in this order. A pair of external electrodes 15 and 16 are formed at both ends of the substrate 11 and are electrically connected to the first and second extraction electrodes 12 and 13, respectively. The electrostatic protection element 17 is an electrostatic protection element made of a varistor mainly composed of SiC formed on the resistor 14. When an overvoltage is applied by, for example, an electrostatic pulse or a surge voltage, the impedance is lowered. . The electrostatic protection element 17 is electrically connected to the second extraction electrode 13 and is electrically connected to the first extraction electrode 12 via the third extraction electrode 18.

  According to the configuration of the second embodiment of the present invention described above, the electrostatic protection element 17 made of a varistor mainly composed of SiC is laminated on the resistor 14, and the electrostatic protection element 17 is the second protection element. Are electrically connected to the first extraction electrode 12 via the third extraction electrode 18, so that the resistor 14 and the electrostatic protection element 17 are connected in parallel. As a result, since static electricity can be bypassed by the electrostatic protection element 17, the electrostatic pulse resistance of the chip resistor with the electrostatic protection function can be increased.

  In addition, since the electrostatic protection element 17 and the resistor 14 are stacked, the substrate area is reduced as compared with the case where the electrostatic protection element 17 and the resistor 14 are formed side by side on one surface of the substrate 11. As a result, the chip resistor can be miniaturized. As a result, the mounting area of the chip resistor with the electrostatic protection function can be reduced, and the number of components is not increased unlike the case where the electrostatic protection element 17 is provided separately from the chip resistor. As a result, the cost can be reduced and the device using the chip resistor with the electrostatic protection function can be downsized.

(Embodiment 3)
Hereinafter, a chip resistor with an electrostatic protection function which is an example of a chip component with an electrostatic protection function in Embodiment 3 of the present invention will be described. 6 is a perspective view of the chip resistor with electrostatic protection function according to the third embodiment of the present invention as seen from the top surface side, and FIG. 7 is a perspective view of the chip resistor with electrostatic protection function shown in FIG. FIG. 8 is a cross-sectional view of the chip resistor with an electrostatic protection function shown in FIG.

  6, 7, and 8, the substrate 21 is a substrate configured using alumina, for example. Formed on one surface of the substrate 21 are first and second extraction electrodes 22 and 23 and a resistor 24 electrically connected to the first and second extraction electrodes 22 and 23. . The pair of external electrodes 25 and 26 are formed at both ends of the substrate 21 and are electrically connected to the first and second extraction electrodes 22 and 23, respectively. The protective element 27 is a protective element made of a varistor mainly composed of SiC formed on the other surface of the substrate 21 so as to face the resistor 24 with the substrate 11 interposed therebetween. When an overvoltage is applied, the impedance decreases. The protective element 27 is electrically connected to the external electrode 25 via the third extraction electrode 28. Further, the third extraction electrode 28 is connected to the fourth extraction electrode 29 via the protective element 27, and the fourth extraction electrode 29 includes side electrodes 30a, 30a formed on both sides of the side of the substrate 21, respectively. 30b is electrically connected.

  According to the configuration of the third embodiment of the present invention described above, both ends of the resistor 24 are connected to the external electrodes 25 and 26, respectively, and both ends of the protection element 27 are connected to the external electrode 25 and the side electrodes 30a and 30b, respectively. Therefore, when the chip resistor with electrostatic protection function shown in FIG. 6 is attached to a circuit board, for example, a printed wiring board, the external electrode 26 and at least one of the side electrodes 30a and 30b are connected. For example, since the resistor 24 and the protection element 27 can be connected in parallel, static electricity applied to the resistor 24 can be bypassed by the protection element 27 and the electrostatic pulse resistance of the resistor 24 can be increased. it can. Further, when the chip resistor with electrostatic protection function shown in FIG. 6 is attached to a circuit board, for example, a printed wiring board, if at least one of the side electrodes 30a and 30b is connected to the ground, it is applied to the resistor 24. The static electricity can be bypassed to the ground by the protective element 27, and the electrostatic pulse resistance of the resistor 24 can be increased.

  Further, the protective element 27 is formed on the other surface of the substrate 21 having the resistor 24 formed on one surface thereof so as to be substantially opposed to the resistor 24 with the substrate 21 interposed therebetween. As compared with the case where the protective element 27 and the resistor 24 are formed side by side on one side, the substrate area can be reduced. As a result, the size of the chip resistor can be reduced. As a result, the mounting area of the chip resistor with the electrostatic protection function can be reduced, and the number of components does not increase unlike the case where the protection element 27 is provided separately from the chip resistor. Thus, the cost can be reduced and the apparatus using the chip resistor with the electrostatic protection function can be reduced in size.

(Embodiment 4)
Hereinafter, a chip resistor with an electrostatic protection function which is an example of a chip component with an electrostatic protection function in Embodiment 4 of the present invention will be described. 9 is a perspective view of a chip resistor with an electrostatic protection function according to a fourth embodiment of the present invention, FIG. 10 is a cross-sectional view of the chip resistor with an electrostatic protection function shown in FIG. 9, and FIG. 11 is an electrostatic diagram shown in FIG. FIG. 12 is an enlarged schematic diagram between the take-out electrodes of the chip resistor with protection function, and FIG. 12 is an equivalent circuit diagram of the chip resistor with electrostatic protection function shown in FIG.

  9, 10, 11, and 12, the substrate 31 is a substrate configured using alumina, for example. First and second extraction electrodes 32 and 33 are formed on one surface of the substrate 31, and the resistor 34a and SiC are the main components between the first and second extraction electrodes 32 and 33. A mixture 34 including a protection element 34b made of a varistor is electrically connected. The external electrodes 35 and 36 are formed at both ends of the substrate 31. The mixture 34 is connected to the external electrode 35 via the first extraction electrode 32 and is connected to the external electrode 36 via the second extraction electrode 33.

  By adopting the structure as described above, the chip resistor with electrostatic protection function according to Embodiment 4 of the present invention has the first extraction electrode 32 and the second extraction as shown in the enlarged schematic view of FIG. Between the electrode 33, a structure is formed in which a mixture 34 in which resistor particles 34c and protective element particles 34d made of varistor particles mainly composed of SiC are mixed is formed. An equivalent circuit of the mixture 34 sandwiched between the first extraction electrode 32 and the second extraction electrode 33 can be represented by a circuit diagram shown in FIG.

  Next, a manufacturing method and electrical characteristics of the chip resistor with electrostatic protection function according to Embodiment 4 of the present invention will be described.

First, a protective element powder composed of a resistor powder mainly composed of RuO ₂ and a varistor powder composed mainly of SiC is blended at an appropriate blending ratio, and mixed powder containing an appropriate amount of glass frit is mixed with ethyl cellulose or the like. A solvent component such as a resin component and butyl carbitol is added and kneaded using a three roll or the like to prepare a mixed paste of a resistor and a protective element. Furthermore, by adding a resin component such as ethyl cellulose and a solvent component such as butyl carbitol to a mixed powder containing silver as a main component and an appropriate amount of glass frit, the mixture is kneaded using a three-roll roll or the like. Make a paste.

  Next, a silver paste is screen-printed on one surface of the substrate 31 made of alumina, dried at 50 to 150 ° C. for 0.5 to 3 minutes, and then heat-treated at 500 to 900 ° C. for 15 to 180 minutes. One extraction electrode 32 is formed.

  Next, a mixed paste of a resistor and a protective element is screen-printed so as to cover a part of the first extraction electrode 32 and dried at 50 to 150 ° C. for 0.5 to 3 minutes. The silver paste constituting the second extraction electrode 33 is screen-printed, dried at 50 to 150 ° C. for 0.5 to 3 minutes, and further heat-treated at 500 to 900 ° C. for 15 to 180 minutes. Two extraction electrodes 33 are formed. In this case, the thickness of the mixture 34 is desirably formed between 20 and 200 μm in order to secure a desired resistance value and to exhibit a sufficient electrostatic absorption effect.

  Then, a paste made of silver, glass frit, organic vehicle or the like is applied to one end of the substrate 31 so as to be electrically joined to one end of the first extraction electrode 32, and one end of the second extraction electrode 33 is applied. A paste made of silver, glass frit, organic vehicle or the like is applied to the other end of the substrate 31 so as to be electrically joined to the part. Thereafter, a pair of external electrodes 35 and 36 were formed by heat treatment at 500 to 900 ° C. for 15 to 180 minutes, and a chip resistor with an electrostatic protection function in Embodiment 4 of the present invention was fabricated.

  Table 2 shows the electrostatic test results of the conventional chip resistor and the chip resistor with electrostatic protection function according to the fourth embodiment of the present invention.

（表２）から明らかなように、従来例では、静電気の印加電圧を２ｋＶから１５ｋＶまで増大させるに従って、チップ形抵抗器の抵抗値の変化が増大しているが、本発明の実施の形態４においては静電気を１５ｋＶまで印加しても静電気保護機能付きチップ形抵抗器の抵抗値の変化は見られなかった。これは従来のチップ形抵抗器に静電気が印加された場合には、静電気は回路上、抵抗体を通らなければならないため、静電気に弱い従来のチップ形抵抗器は劣化するが、本発明の実施の形態４においては静電気保護機能付きチップ形抵抗器に静電気が印加されたとしても、静電気は抵抗体粒子３４ｃと保護素子粒子３４ｄとが混在する混合体３４における保護素子粒子３４ｄ側をバイパスして、抵抗体粒子３４ｃには印加されないからである。これは、ＳｉＣを主成分とするバリスタからなる保護素子３４ｂのインピーダンスは通常時には高いため、見かけ上オープンに見えるが、静電気により数ｋＶ以上といった高電圧が印加された場合には、ＳｉＣを主成分とするバリスタからなる保護素子３４ｂはインピーダンスが急激に低下し、静電気を優先的にバイパスさせることになり、そして、静電気が通ったあとは再びインピーダンスが復帰、増大することによる。

As apparent from Table 2, in the conventional example, the change in the resistance value of the chip resistor increases as the applied voltage of static electricity is increased from 2 kV to 15 kV. No change was observed in the resistance of the chip resistor with electrostatic protection function even when static electricity was applied up to 15 kV. This is because, when static electricity is applied to a conventional chip resistor, the static electricity must pass through a resistor on the circuit, so that the conventional chip resistor that is sensitive to static electricity deteriorates. In form 4, even if static electricity is applied to the chip resistor with electrostatic protection function, the static electricity bypasses the protective element particle 34d side in the mixture 34 in which the resistor particles 34c and the protective element particles 34d are mixed. This is because it is not applied to the resistor particles 34c. This is because the impedance of the protective element 34b made of a varistor mainly composed of SiC is normally high, and thus appears to be open. However, when a high voltage of several kV or more is applied due to static electricity, the main component is SiC. This is because the impedance of the protective element 34b made of a varistor decreases rapidly, and static electricity is preferentially bypassed, and after the static electricity passes, the impedance is restored and increased again.

  According to the configuration of the fourth embodiment of the present invention described above, the resistor 34a is electrically connected between the first and second extraction electrodes 32 and 33 formed on one surface of the substrate 31. 9 and the protection element 34b, the static electricity can be bypassed by the protection element 34b in the mixture 34. Therefore, the chip with the electrostatic protection function shown in FIG. The electrostatic pulse resistance of the resistor can be increased. Further, since the protective element 34b is included in the mixture 34 together with the resistor 34a, the number of components does not increase unlike the case where the protective element 34b is provided separately from the chip-type resistor. As a result, the cost can be reduced and the device using the chip resistor with the electrostatic protection function can be downsized.

  Further, according to the configuration of the fourth embodiment of the present invention, the mixed body 34 including the resistor 34a and the protective element 34b is mixed with the mixed paste including the protective element powder made of the resistor powder and the varistor powder, and the glass frit. Therefore, the protective element 34b and the resistor 34a are formed only by printing and baking a mixed paste containing the resistor powder, the protective element powder made of the varistor powder, and the glass frit. be able to. As a result, the printing process of the varistor powder and the printing process of the resistor powder in the case where the protective element and the resistor are individually formed can be replaced with the printing process of the mixed paste, so that the printing process is reduced and the production is performed. Cost can be reduced. Furthermore, since the protective element 34b made of a varistor mainly composed of SiC can be formed in the same portion as the resistor 34a, the size of the component can be reduced.

(Embodiment 5)
Hereinafter, a chip resistor with an electrostatic protection function which is an example of a chip component with an electrostatic protection function in the fifth embodiment will be described. 13 is a perspective view of a chip resistor with an electrostatic protection function according to a fifth embodiment of the present invention, FIG. 14 is a sectional view taken along line 14-14 in FIG. 13, and FIG. 15 is with an electrostatic protection function shown in FIG. It is an equivalent circuit diagram of a chip-type resistor.

  13, 14, and 15, the substrate 41 is a substrate configured using alumina, for example. On one surface of the substrate 41, first and second resistor take-out electrodes 42 and 43, and a resistor 44 electrically connected between the first and second resistor take-out electrodes 42 and 43, Is formed. A pair of external electrodes 45 and 46 are formed at both ends of the substrate 41. The external electrode 45 is connected to the external electrode 46 via the first resistor extraction electrode 42, the resistor 44, and the second resistor extraction electrode 43.

  Further, on one surface of the substrate 41, a first protection element extraction electrode 48, a protection element 47 made of a varistor mainly composed of SiC, and a second protection element extraction electrode 49 are formed. Side electrodes 50 are formed on both sides of the side portion. The external electrode 45 is electrically connected to the side electrode 50 via the first protection element extraction electrode 48, the protection element 47, and the second protection element extraction electrode 49.

  The circuit diagram of the chip resistor with electrostatic protection function in the fifth embodiment of the present invention described above is shown by an equivalent circuit diagram shown in FIG. In the chip resistor with electrostatic protection function according to the fifth embodiment, one end of the resistor 44 and one end of the protection element 47 are external electrodes by the first resistor extraction electrode 42 and the first protection element extraction electrode 48. The second resistor extraction electrode 43 connected to the other end of the resistor 44 and the second protection element extraction electrode 49 connected to the other end of the protection element 47 are not connected to each other. The external electrode 46 and the side electrode 50 are connected to each other.

  Accordingly, the chip resistor with electrostatic protection function according to the fifth embodiment of the present invention has a three-terminal structure having the external electrodes 45 and 46 and the side electrode 50, and therefore the protection element 47 is the second protection element take-out. The side electrode 50 connected via the electrode 49 can be used to connect to ground and bypass static electricity to ground.

  According to the configuration of the fifth embodiment of the present invention described above, both ends of the resistor 44 are connected to the external electrodes 45 and 46, respectively, and both ends of the protection element 47 are connected to the external electrode 45 and the side electrode 50, respectively. Therefore, when the chip resistor with electrostatic protection function shown in FIG. 13 is attached to a circuit board, for example, a printed wiring board, if the external electrode 46 and the side electrode 50 are connected, the resistor 44 and the protective element As a result, the static electricity applied to the resistor 44 can be bypassed by the protection element 47, and the electrostatic pulse resistance of the chip resistor with the electrostatic protection function can be increased.

  13 is attached to a circuit board, for example, a printed wiring board, if the side electrode 50 is connected to the ground, the static electricity applied to the resistor 44 is protected by the protective element 47. Can be bypassed to the ground, and the electrostatic pulse resistance of the chip-type resistor with an electrostatic protection function can be increased.

  In addition, since the resistor 44 and the protective element 47 are formed on the same substrate 41, the number of components does not increase unlike the case where the protective element 47 is provided separately from the chip resistor. As a result, the cost can be reduced and the device can be downsized.

(Embodiment 6)
Hereinafter, a chip resistor with an electrostatic protection function which is an example of a chip component with an electrostatic protection function in Embodiment 6 of the present invention will be described. 16 is a perspective view of a chip resistor with an electrostatic protection function according to a sixth embodiment of the present invention, FIG. 17 is a sectional view taken along line 17-17 in FIG. 16, and FIG. 18 is a chip resistor with an electrostatic protection function shown in FIG. It is an equivalent circuit diagram of a vessel.

  16, 17, and 18, a substrate 51 is a substrate configured using alumina, for example. On one surface of the substrate 51, the first and second resistor take-out electrodes 52 and 53, the resistor 54, the first and third protection element take-out electrodes 58 and 59, and the second protection element take-out are provided. An electrode 60 and a protective element 57 made of a varistor mainly composed of SiC are formed. A pair of external electrodes 55 and 56 are formed at both ends of the substrate 51. The side electrodes 61 are formed on the side portions on both sides of the substrate 51.

  The external electrode 55 is electrically connected to the external electrode 56 through the first resistor extraction electrode 52, the resistor 54, and the second resistor extraction electrode 53. Further, the external electrode 55 is electrically connected to the external electrode 56 via the first protective element take-out electrode 58, the protective element 57, and the third protective element take-out electrode 59, and the first protective element take-out electrode The electrode 58, the protection element 57, and the second protection element extraction electrode 60 are electrically connected to the side electrode 61.

  According to this configuration, as shown in FIG. 18, the resistor 54 and the protection element 57 are connected in parallel, and both ends of the resistor 54 are connected to the external electrode 61 via the protection element 57. When viewed from the external electrode 61, this configuration is equivalent to a π-type filter in which two protection elements 57 are respectively connected to both ends of the resistor 54.

  According to the configuration of the sixth embodiment of the present invention described above, since the resistor 54 and the protective element 57 are connected in parallel, the static electricity applied to the resistor 54 can be bypassed by the protective element 57, and the static electricity The electrostatic pulse resistance of the chip resistor with a protective function can be increased.

  Further, when the chip-type resistor with the electrostatic protection function shown in FIG. 13 is attached to a circuit board, for example, a printed wiring board, if the side electrode 61 is connected to the ground, the static electricity applied to the resistor 54 is protected by the protective element 57. Can be bypassed to the ground, and the electrostatic pulse resistance of the chip-type resistor with an electrostatic protection function can be increased.

  In addition, since the resistor 54 and the protection element 57 are formed on the same substrate 51, the number of parts does not increase unlike the case where the protection element 57 is provided separately from the chip resistor. As a result, the cost can be reduced and the apparatus using the chip resistor with the electrostatic protection function can be downsized.

  Further, in the sixth embodiment of the present invention, as shown in the equivalent circuit diagram of FIG. 18, a π-type configuration in which protective elements 57 serving as bypass paths to the ground are connected before and after the resistor 54, respectively. Since the static electricity can be bypassed regardless of the direction in which the static electricity enters, there is an effect that it is not necessary to consider the directivity when the chip resistor with the electrostatic protection function is mounted on the circuit board.

  In the first to sixth embodiments of the present invention, the electrostatic protection elements 7, 17, 27, 34b, 47, and 57 have been described using varistors mainly composed of SiC. However, the present invention is not limited to this. Other than this, for example, even when a varistor mainly composed of ZnO, a protective element made of metal powder and resin, or the like is used, the same effects as those of the first to sixth embodiments of the present invention are obtained. It is what you have.

  Further, in the first embodiment of the present invention, as shown in FIG. 2, a sandwich structure in which the electrostatic protection element 7 is sandwiched between the first electrostatic protection element extraction electrode 8 and the second electrostatic protection element extraction electrode 9 is employed. Although electrical connection is intended, the present invention is not limited to this connection structure. For example, as shown in FIG. 19, first and second electrostatic protection element extraction electrodes 8 and 9 are connected to the substrate 1. An electrical connection is made with a gap structure in which a gap is formed on one surface, and the electrostatic protection element 7 is formed on the first and second electrostatic protection element take-out electrodes 8 and 9 so as to fill the gap. You may make it show.

  In the third embodiment of the present invention, as shown in FIG. 8, electrical connection is achieved with a sandwich structure in which the resistor 24 is sandwiched between the first extraction electrode 22 and the second extraction electrode 23. However, the present invention is not limited to this connection structure. For example, as shown in FIG. 20, first and second extraction electrodes 22 and 23 are formed on one surface of the substrate 21 with a gap therebetween. In addition, electrical connection may be achieved with a gap structure in which a resistor 24 is formed on the first and second extraction electrodes 22 and 23 so as to fill the gap.

  Furthermore, in Embodiment 4 of the present invention, as shown in FIG. 10, a sandwich structure in which a mixture 34 including a resistor and a protective element is sandwiched between a first extraction electrode 32 and a second extraction electrode 33 is employed. Although electrical connection is intended, it is not limited to this connection structure. For example, as shown in FIG. 21, the first and second extraction electrodes 32 and 33 are provided on one surface of the substrate 31. An electrical connection is made with a gap structure in which a mixture 34 including a resistor and a protection element is formed on the first and second extraction electrodes 32 and 33 so as to fill the gap. You may make it plan.

  Furthermore, in the fifth embodiment of the present invention, as shown in FIGS. 13 and 14, a sandwich structure in which the protective element 47 is sandwiched between the first protective element extraction electrode 48 and the second protective element extraction electrode 49. However, the present invention is not limited to this connection structure. For example, as shown in FIGS. 22 and 23, the first and second protective element take-out electrodes 48 and 49 are formed on the substrate. The gap 41 is formed with a gap on one surface, and the protective element 47 is formed on the first and second protective element take-out electrodes 48 and 49 so as to fill the gap. You may make it show.

  In the sixth embodiment of the present invention, as shown in FIGS. 16 and 17, the protective element 57 includes the first and third protective element extraction electrodes 58 and 59 and the second protective element extraction electrode 60. Although the electrical connection is achieved by a sandwich structure sandwiched between, the present invention is not limited to this connection structure. For example, as shown in FIGS. 24 and 25, the first, second, and third protections are provided. The element take-out electrodes 58, 60, 59 are formed with a gap on one surface of the substrate 51, and the first, second, and third protective element take-out electrodes 58, 60, 59 are formed so as to fill the gap. Alternatively, electrical connection may be achieved with a gap structure in which the protective element 57 is formed.

(Embodiment 7)
Hereinafter, a chip part with an electrostatic protection function in Embodiment 7 of the present invention will be described. 26 is a perspective view of the chip component with electrostatic protection function according to the seventh embodiment of the present invention, FIG. 27 is a sectional view taken along line 27-27 in FIG. 26, and FIG. 28 is an equivalent circuit of the chip component with electrostatic protection function shown in FIG. FIG.

  In FIGS. 26 and 27, a substrate 101 is a substrate configured using alumina, for example. On one surface of the substrate 101, first and second capacitor element extraction electrodes 102 and 103 are provided. A capacitive element 104 (capacitor) is formed so as to be electrically connected between the first capacitive element extraction electrode 102 and the second capacitive element extraction electrode 103. A pair of external electrodes 105 and 106 are formed on both ends of the substrate 101. One end of the first capacitor element extraction electrode 102 is connected to the external electrode 105, and one end of the second capacitor element extraction electrode 103 is connected to the external electrode 106. The electrostatic protection element 107 is a protection element made of a varistor mainly composed of SiC formed in parallel with the capacitor element 104 on one surface of the substrate 101. For example, when an overvoltage is applied by an electrostatic pulse or a surge voltage, the impedance is Decreases. The electrostatic protection element 107 is electrically connected to a pair of external electrodes 105 and 106 via first and second electrostatic protection element extraction electrodes 108 and 109.

  With the above structure, the capacitor 104 and the electrostatic protection element 107 can be formed in parallel on one surface of the same substrate 101, so that an equivalent circuit as shown in FIG. 28 can be formed.

  Next, a manufacturing method and electrical characteristics of the chip component with electrostatic protection function according to the seventh embodiment of the present invention will be described.

First, to a mixed powder containing PbTiO ₃ as a main component and an appropriate amount of glass frit added, a resin component such as ethyl cellulose and a solvent component such as butyl carbitol are added and kneaded using a three-roll roller or the like. An element paste is prepared. In the same manner, by adding a resin component such as ethyl cellulose and a solvent component such as butyl carbitol to a mixed powder containing SiC as a main component and adding an appropriate amount of glass frit, and kneading using a three roll or the like. An electrostatic protection element paste made of varistor paste is prepared. Furthermore, a silver paste is obtained by adding a resin component such as ethyl cellulose and a solvent component such as butyl carbitol to a mixed powder containing silver as a main component and an appropriate amount of glass frit, and kneading using a three-roll roll or the like. Is made.

  Next, a silver paste is screen-printed on one surface of the substrate 101 made of alumina, dried at 50 to 150 ° C. for 0.5 to 3 minutes, and then heat-treated at 500 to 900 ° C. for 15 to 180 minutes, whereby the first The capacitor element extraction electrode 102 and the first electrostatic protection element extraction electrode 108 are respectively formed.

  Next, the capacitive element paste is screen-printed so as to cover a part of the first capacitive element extraction electrode 102 and dried at 50 to 150 ° C. for 0.5 to 3 minutes. Then, an electrostatic protection element paste is screen-printed so as to cover a part of the first electrostatic protection element take-out electrode 108 and dried at 50 to 150 ° C. for 0.5 to 3 minutes. Further, silver paste constituting each of the second capacitive element extraction electrode 103 and the second electrostatic protection element extraction electrode 109 is screen-printed on the dried capacitive element paste and the electrostatic protection element paste, and 50 to 150 ° C. For 0.5 to 3 minutes. Then, the capacitor element 104, the electrostatic protection element 107, the second capacitor element extraction electrode 103, and the second electrostatic protection element extraction electrode 109 are formed by heat treatment at 500 to 900 ° C. for 15 to 180 minutes. In this case, since the impedance of the electrostatic protection element 107 depends on the thickness, the thickness of the electrostatic protection element 107 is desirably 200 μm or less in order to exhibit a sufficient electrostatic absorption effect.

  Next, one end of the substrate 101 is made of silver, glass frit, organic vehicle, or the like so as to be electrically bonded to one end of the first capacitor element extraction electrode 102 and the first electrostatic protection element extraction electrode 108. Is coated with silver, glass frit on the other end of the substrate 1 so as to be electrically bonded to one end of the second capacitive element extraction electrode 103 and the second electrostatic protection element extraction electrode 109. Apply paste made of organic vehicle. Thereafter, heat treatment was performed at 500 to 900 ° C. for 15 to 180 minutes, followed by baking to form a pair of external electrodes 105 and 106, and thus a chip component with an electrostatic protection function in Embodiment 7 of the present invention was produced.

  Table 3 shows the electrostatic test results for the conventional capacitive element and the chip component with electrostatic protection function according to the seventh embodiment of the present invention.

静電気試験条件は国際規格ＩＥＣ６１０００−４−２（人体モデル）に準拠して行った。（表３）から明らかなように、従来例では静電気を２ｋＶ印加した後、及び４ｋＶ印加した後においては、静電容量が初期値に比べて低下し、さらに静電気を８ｋＶ印加した後、及び１５ｋＶ印加した後においては、静電容量が初期値に比べて大きく低下するという静電容量値の変化が見られたが、本発明の実施の形態７においては静電気を２ｋＶ印加した後、４ｋＶ印加した後、８ｋＶ印加した後、及び１５ｋＶ印加した後においても、初期値に比べて静電容量値の変化は見られなかった。

The electrostatic test conditions were performed in accordance with the international standard IEC61000-4-2 (human body model). As is clear from Table 3, in the conventional example, after applying 2 kV of static electricity and after applying 4 kV, the capacitance decreases compared to the initial value, and further, after applying 8 kV of static electricity, and 15 kV After application, a change in capacitance value was observed in which the capacitance decreased significantly compared to the initial value. In Embodiment 7 of the present invention, 4 kV was applied after 2 kV was applied. Later, even after applying 8 kV and after applying 15 kV, no change in capacitance value was observed compared to the initial value.

  This is because, when static electricity is applied to a conventional capacitive element, the capacitive element is an insulator, so that the static electricity passes through the discharge electrode between the shortest distances. The element has a reduced capacitance. On the other hand, in the chip part with the electrostatic protection function according to the seventh embodiment of the present invention, even if static electricity is applied, the static electricity bypasses the electrostatic protection element 107 side. Thereby, since static electricity is not applied to the capacitive element 104, the electrostatic capacitance value of the capacitive element 104 does not change. This is because the electrostatic protection element 107 is normally open because it has a high impedance. However, when a high voltage of several kV or more is applied due to static electricity, the electrostatic protection element 107 suddenly decreases its impedance, Bypass with priority. Then, after the static electricity passes, the impedance is restored and increased again, so that the electrostatic capacity of the chip component with the electrostatic protection function is suppressed from being reduced by the static electricity.

  In this manner, by forming the electrostatic protection element 107 and the capacitor element 104 in parallel, static electricity can be bypassed. In order to increase the static electricity bypass effect of the electrostatic protection element 107, it is better to lower the impedance of the electrostatic protection element 107. For this purpose, the thickness of the electrostatic protection element 107 is preferably 200 μm or less.

(Embodiment 8)
Hereinafter, a chip part with an electrostatic protection function according to an eighth embodiment of the present invention will be described. FIG. 29 is a perspective view of a chip part with an electrostatic protection function according to an eighth embodiment of the present invention, and FIG. 30 is a cross-sectional view of the chip part with an electrostatic protection function shown in FIG.

  29 and 30, a substrate 111 is a substrate configured using alumina, for example. First and second extraction electrodes 112 and 113 are provided on one surface of the substrate 111. Further, the capacitor element 114 is formed by being electrically connected between the first extraction electrode 112 and the second extraction electrode 113, and the first extraction electrode 112, the capacitance element 114, and the second extraction electrode are formed. The electrode 113, the electrostatic protection element 117, and the third extraction electrode 118 are provided by being stacked in this order. A pair of external electrodes 115 and 116 are formed at both ends of the substrate 111 and are electrically connected to the first and second extraction electrodes 12 and 13, respectively. The electrostatic protection element 117 is an electrostatic protection element made of a varistor mainly composed of SiC formed on the capacitor element 114. When an overvoltage is applied by, for example, an electrostatic pulse or a surge voltage, the impedance is lowered. . The electrostatic protection element 117 is electrically connected to the second extraction electrode 113 and electrically connected to the first extraction electrode 112 via the third extraction electrode 118.

  According to the configuration of the eighth embodiment of the present invention described above, the electrostatic protection element 117 made of a varistor mainly composed of SiC is laminated on the capacitor element 114, and the electrostatic protection element 117 is the second element. The capacitor element 114 and the electrostatic protection element 117 are connected in parallel because the capacitor element 114 and the electrostatic protection element 117 are electrically connected to the first extraction electrode 113 and the first extraction electrode 112 via the third extraction electrode 118. As a result of the connection, the static electricity applied to the capacitor element 114 can be bypassed by the electrostatic protection element 117, so that the electrostatic pulse resistance of the chip component with the electrostatic protection function can be increased.

  Further, since the electrostatic protection element 117 is formed by being laminated on the capacitor element 114, the area of the substrate is smaller than when the electrostatic protection element 117 and the capacitor element 114 are formed side by side on one surface of the substrate 111. As a result of being able to reduce, the size of the chip component with the electrostatic protection function can be reduced. As a result, the mounting area of the chip component with the electrostatic protection function can be reduced, and the number of components does not increase unlike the case where the electrostatic protection element 117 is provided separately from the chip component with the electrostatic protection function. In addition, the device using the chip component with the electrostatic protection function can be reduced in size.

(Embodiment 9)
Hereinafter, a chip part with an electrostatic protection function according to a ninth embodiment of the present invention will be described. 31 is a perspective view as seen from the upper surface side of the chip component with electrostatic protection function according to the ninth embodiment of the present invention, FIG. 32 is a perspective view as seen from the rear surface side of the chip component with electrostatic protection function, and FIG. It is sectional drawing of the chip component with an electrostatic protection function shown in FIG.

  31, FIG. 32, and FIG. 33, a substrate 121 is a substrate that is made of alumina, for example. Formed on one surface of the substrate 121 are first and second extraction electrodes 122 and 123 and a capacitive element 124 electrically connected between the first and second extraction electrodes 122 and 123. ing. The external electrodes 125 and 126 are a pair of electrodes that are formed at both ends of the substrate 121 and are electrically connected to the first and second extraction electrodes 122 and 123. The electrostatic protection element 127 is a protection element made of a varistor mainly composed of SiC formed on the other surface of the substrate 121 so as to be substantially opposed to the capacitive element 124 with the substrate 121 interposed therebetween. When an overvoltage is applied due to the above, the impedance is lowered. The electrostatic protection element 127 is electrically connected to the external electrode 125 through the third extraction electrode 128. The third extraction electrode 128 is connected to the fourth extraction electrode 129 via the electrostatic protection element 127, and the fourth extraction electrode 129 is a side electrode formed on each side of the substrate 121. 130a and 130b are electrically connected.

  According to the configuration of the ninth embodiment of the present invention described above, both ends of the capacitive element 124 are connected to the external electrodes 125 and 126, respectively, and both ends of the electrostatic protection element 127 are connected to the external electrode 125 and the side electrodes 130a and 130b. Since they are connected to each other, when the chip component with an electrostatic protection function shown in FIG. 31 is attached to a circuit board, for example, a printed wiring board, the external electrode 126 and at least one of the side electrodes 130a and 130b are connected. As a result of the capacitance element 124 and the electrostatic protection element 127 being connected in parallel, the static electricity applied to the capacitance element 124 can be bypassed by the electrostatic protection element 127, and the electrostatic pulse withstand capability of the chip component with the electrostatic protection function can be increased. Can be increased.

  Further, when the chip component with the electrostatic protection function shown in FIG. 31 is attached to a circuit board, for example, a printed wiring board, if at least one of the side electrodes 130a and 130b is connected to the ground, the static electricity applied to the capacitive element 124 Can be bypassed to the ground by the electrostatic protection element 127, so that the electrostatic pulse tolerance of the chip component with the electrostatic protection function can be increased.

  Further, the electrostatic protection element 127 is formed on the other surface of the substrate 121 having the capacitor element 124 formed on one surface thereof so as to substantially face the capacitor element 124 with the substrate 121 interposed therebetween. As a result, the substrate area can be reduced as compared with the case where the electrostatic protection element 127 and the capacitor element 124 are formed side by side on one surface of the substrate, and as a result, the size of the chip component with the electrostatic protection function can be reduced. As a result, the mounting area of the chip component with the electrostatic protection function can be reduced, and the number of components is not increased unlike the case where the electrostatic protection element 127 is provided separately from the chip-type capacitive element. In addition, it is possible to reduce the size of a device using the chip component with the electrostatic protection function.

(Embodiment 10)
Hereinafter, a chip part with an electrostatic protection function in Embodiment 10 of the present invention will be described. 34 is a perspective view of the chip component with electrostatic protection function according to the tenth embodiment of the present invention, FIG. 35 is a sectional view of the chip component with electrostatic protection function shown in FIG. 34, and FIG. 36 is the chip with electrostatic protection function shown in FIG. FIG. 37 is an equivalent circuit diagram of the chip component with an electrostatic protection function shown in FIG. 34. FIG.

  In FIGS. 34, 35, 36, and 37, a substrate 131 is a substrate that is made of alumina, for example. First and second extraction electrodes 132 and 133 are formed on one surface of the substrate 131. Between the first and second extraction electrodes 132 and 133, the capacitor element 134a and SiC are the main components. A mixture 134 including an electrostatic protection element 134b made of a varistor is electrically connected. The pair of external electrodes 135 and 136 are formed at both ends of the substrate 131. The mixture 134 is connected to the external electrode 135 via the first extraction electrode 132 and is connected to the external electrode 136 via the second extraction electrode 133.

  With the structure as described above, the chip component with an electrostatic protection function according to the tenth embodiment of the present invention has the first extraction electrode 132 and the second extraction electrode 133 as shown in the enlarged schematic view of FIG. Between the capacitor element particles 134c and the protective element particles 134d, a mixture 134 is formed. An equivalent circuit diagram in this case can be represented by a circuit diagram shown in FIG.

  Next, a manufacturing method and electrical characteristics of the chip component with electrostatic protection function according to the tenth embodiment of the present invention will be described.

First, a capacitive element powder mainly composed of PbTiO ₃ and a protective element powder composed of a varistor powder mainly composed of SiC are blended at an appropriate blending ratio, and ethyl cellulose or the like is added to a mixed powder to which an appropriate amount of glass frit is added. The resin component and a solvent component such as butyl carbitol are added and kneaded using a three roll or the like to prepare a mixture paste of the capacitive element and the protective element. Furthermore, a silver paste is obtained by adding a resin component such as ethyl cellulose and a solvent component such as butyl carbitol to a mixed powder containing silver as a main component and an appropriate amount of glass frit, and kneading using a three-roll roll or the like. Is made.

  Next, a silver paste is screen-printed on one surface of the substrate 131 made of alumina, dried at 50 to 150 ° C. for 0.5 to 3 minutes, and then heat-treated at 500 to 900 ° C. for 15 to 180 minutes, whereby the first The extraction electrode 132 is formed.

  Next, a mixed paste of a capacitive element and a protective element is screen-printed so as to cover a part of the first extraction electrode 132 and dried at 50 to 150 ° C. for 0.5 to 3 minutes. Then, the silver paste constituting the second extraction electrode 133 is screen-printed on the mixture paste, dried at 50 to 150 ° C. for 0.5 to 3 minutes, and further heat-treated at 500 to 900 ° C. for 15 to 180 minutes. Thus, the mixture 134 and the second extraction electrode 133 are formed. In this case, the thickness of the mixture 134 is desirably formed between 20 and 200 μm in order to secure a desired capacitance value and to exhibit a sufficient electrostatic absorption effect.

  Next, a paste made of silver, glass frit, organic vehicle, or the like is applied to one end of the substrate 131 so as to be electrically bonded to one end of the first extraction electrode 132, and the second extraction electrode 133 A paste made of silver, glass frit, organic vehicle, or the like is applied to the other end of the substrate 131 so as to be electrically bonded to the one end. Thereafter, heat treatment was performed at 500 to 900 ° C. for 15 to 180 minutes and baking was performed to form a pair of external electrodes 135 and 136, thereby producing a chip component with an electrostatic protection function in Embodiment 10 of the present invention.

  Table 4 shows the electrostatic test results of the conventional capacitive element and the chip component with electrostatic protection function according to the tenth embodiment of the present invention.

（表４）から明らかなように、従来例では静電気を２ｋＶ印加した後、及び４ｋＶ印加した後においては、静電容量が初期値に比べて低下し、そして静電気を８ｋＶ印加した後、及び１５ｋＶ印加した後においては、静電容量が初期値に比べて大きく低下するという静電容量値の変化が見られたが、本発明の実施の形態１０においては静電気を２ｋＶ印加した後、４ｋＶ印加した後、８ｋＶ印加した後、及び１５ｋＶ印加した後においても、初期値に比べて静電容量値の変化は見られなかった。これは従来の容量素子に静電気が印加された場合には、容量素子が絶縁体であるため、静電気は最も距離の短い取出し電極間を放電する形で通ることになり、これにより、従来の容量素子は静電容量が低下するが、本発明の実施の形態１０においては静電気が印加されたとしても、静電気は容量素子粒子１３４ｃと保護素子粒子１３４ｄとが混在する混合体１３４における保護素子粒子１３４ｄ側をバイパスして、容量素子粒子１３４ｃには静電気が印加されないからである。これは、ＳｉＣを主成分とするバリスタからなる静電気保護素子１３４ｂのインピーダンスは通常時には高いため、見かけ上オープンに見えるが、静電気により数ｋＶ以上といった高電圧が印加された場合には、ＳｉＣを主成分とするバリスタからなる静電気保護素子１３４ｂはインピーダンスが急激に低下し、静電気を優先的にバイパスさせることになり、そして、静電気が通ったあとは再びインピーダンスが復帰、増大するからである。

As is clear from Table 4, in the conventional example, after applying 2 kV of static electricity and after applying 4 kV, the capacitance decreases compared to the initial value, and after applying 8 kV of static electricity, and 15 kV After application, a change in capacitance value was observed in which the capacitance decreased significantly compared to the initial value. In the tenth embodiment of the present invention, 4 kV was applied after 2 kV was applied. Later, even after applying 8 kV and after applying 15 kV, no change in capacitance value was observed compared to the initial value. This is because, when static electricity is applied to a conventional capacitive element, the capacitive element is an insulator, so that the static electricity passes in a form of discharging between the extraction electrodes with the shortest distance. Although the capacitance of the element decreases, in the tenth embodiment of the present invention, even if static electricity is applied, the static electricity is protected element particles 134d in the mixture 134 in which the capacitive element particles 134c and the protective element particles 134d are mixed. This is because static electricity is not applied to the capacitive element particles 134c, bypassing the side. This is because the impedance of the electrostatic protection element 134b made of a varistor mainly composed of SiC is normally high, and thus appears to be open, but when high voltage of several kV or more is applied due to static electricity, SiC is mainly used. This is because the electrostatic protection element 134b made of a varistor as a component has an impedance that suddenly decreases, preferentially bypasses static electricity, and the impedance is restored and increased again after the static electricity has passed.

  According to the above-described configuration of the tenth embodiment of the present invention, the capacitive element 134a and the static electricity are electrically connected to the first and second extraction electrodes 132 and 133 formed on one surface of the substrate 131. Since the mixture 134 including the protection element 134b is formed, static electricity can be bypassed by the electrostatic protection element 134b in the mixture 134, so that the electrostatic pulse resistance of the chip component with the electrostatic protection function is increased. be able to. Further, since the electrostatic protection element 134b is included in the mixture 134 including the capacitive element 134a, the number of parts increases as if the electrostatic protection element 134b was provided separately from the chip-type capacitive element. In this way, the cost can be reduced and the apparatus can be reduced in size.

  Further, according to the configuration of the tenth embodiment of the present invention, the mixture 134 including the capacitive element 134a and the electrostatic protection element 134b is mixed with the protective element powder composed of the capacitive element powder, the varistor powder, and the glass frit. Since the paste is integrally formed, the electrostatic protective element 134b and the capacitive element 134a are formed simply by printing and baking a mixed paste containing the protective element powder and the glass frit composed of the capacitive element powder and the varistor powder. can do. As a result, the printing process of the varistor powder and the printing process of the resistor powder in the case where the protective element and the resistor are individually formed can be replaced with the printing process of the mixed paste, so that the printing process is reduced and the production is performed. Cost can be reduced. Furthermore, since the electrostatic protection element 134b made of a varistor mainly composed of SiC can be formed in the same portion as the capacitor element 134a, the size of the component can be reduced.

(Embodiment 11)
Hereinafter, a chip part with an electrostatic protection function in an eleventh embodiment of the present invention will be described. 38 is a perspective view of the chip component with electrostatic protection function according to the eleventh embodiment of the present invention, FIG. 39 is a sectional view taken along line 39-39 in FIG. 38, and FIG. 40 is an equivalent circuit of the chip component with electrostatic protection function shown in FIG. FIG.

  In FIGS. 38, 39, and 40, the substrate 141 is a substrate made of alumina, for example. On one surface of the substrate 141, there are first and second capacitor element extraction electrodes 142 and 143, and a capacitor element 144 electrically connected between the first and second capacitor element extraction electrodes 142 and 143. Is formed. A pair of external electrodes 145 and 146 are formed on both ends of the substrate 141. The external electrode 145 is connected to the external electrode 146 via the first capacitor element extraction electrode 142, the capacitor element 144, and the second capacitor element extraction electrode 143.

  Also, on one surface of the substrate 141, a first electrostatic protection element extraction electrode 148, an electrostatic protection element 147 made of a varistor mainly composed of SiC, and a second electrostatic protection element extraction electrode 149 are formed. Side electrodes 150 are formed on the sides of the substrate 141. The external electrode 145 is electrically connected to the side electrode 150 via the first electrostatic protection element extraction electrode 148, the electrostatic protection element 147, and the second electrostatic protection element extraction electrode 149.

  The circuit diagram of the chip part with electrostatic protection function in the eleventh embodiment of the present invention is shown by an equivalent circuit diagram shown in FIG. In the chip part with an electrostatic protection function in the eleventh embodiment, one end of the resistor 144 and one end of the protection element 147 are connected to the external electrode 145 by the first resistor extraction electrode 142 and the first electrostatic protection element extraction electrode 148. The second resistor take-out electrode 143 connected to the other end of the resistor 144 and the second ESD protection element take-out electrode 149 connected to the other end of the electrostatic protection element 147 are connected to each other. Without being connected to the external electrode 146 and the side electrode 150, respectively.

  Therefore, the chip component with an electrostatic protection function according to the eleventh embodiment of the present invention has a three-terminal structure having the external electrodes 145 and 146 and the side electrodes 150, so that the electrostatic protection element 147 is taken out of the second electrostatic protection element. Static electricity can be bypassed to the ground by the electrostatic protection element 147 by connecting the side electrode 150 connected via the electrode 149 to the ground.

  According to the configuration of the eleventh embodiment of the present invention described above, both ends of the capacitive element 144 are connected to the external electrodes 145 and 146, respectively, and both ends of the electrostatic protection element 147 are connected to the external electrode 145 and the side electrode 150, respectively. Therefore, when the chip component with an electrostatic protection function shown in FIG. 38 is attached to a circuit board, for example, a printed wiring board, if the external electrode 146 and the side electrode 150 are connected, the capacitive element 144 and the electrostatic protection element As a result of being connected in parallel with 147, static electricity applied to the capacitor element 144 can be bypassed by the electrostatic protection element 147, and the electrostatic pulse tolerance of the chip component with the electrostatic protection function can be increased.

  Further, when the chip part with an electrostatic protection function shown in FIG. 38 is attached to a circuit board, for example, a printed wiring board, if the side electrode 150 is connected to the ground, the static electricity applied to the capacitor 144 is caused by the electrostatic protection element 147. It can be bypassed to the ground, and the electrostatic pulse tolerance of the chip component with the electrostatic protection function can be increased.

  In addition, since the capacitive element 144 and the electrostatic protection element 147 are formed on the same substrate 141, the number of components increases as if the electrostatic protection element 147 was provided separately from the chip-type capacitive element. As a result, the cost can be reduced and the device using the chip component with the electrostatic protection function can be downsized.

(Embodiment 12)
Hereinafter, a chip part with an electrostatic protection function in Embodiment 12 of the present invention will be described. 41 is a perspective view of the chip component with electrostatic protection function according to the twelfth embodiment of the present invention, FIG. 42 is a sectional view taken along line 42-42 in FIG. 41, and FIG. 43 is an equivalent circuit of the chip component with electrostatic protection function shown in FIG. FIG.

  In FIGS. 41, 42, and 43, a substrate 151 is a substrate made of, for example, alumina. On one surface of the substrate 151, the first and second capacitive element extraction electrodes 152 and 153, the capacitive element 154, the first and third electrostatic protection element extraction electrodes 158 and 159, and the second electrostatic protection An element extraction electrode 160 and an electrostatic protection element 157 made of a varistor mainly composed of SiC are formed. A pair of external electrodes 155 and 156 are formed on both ends of the substrate 151. Then, side electrodes 161 are formed on both sides of the substrate 151.

  The external electrode 155 is electrically connected to the external electrode 156 via the first capacitor element extraction electrode 152, the capacitor element 154, and the second capacitor element extraction electrode 153. Further, the external electrode 155 is electrically connected to the external electrode 156 via the first electrostatic protection element extraction electrode 158, the electrostatic protection element 157, and the third electrostatic protection element extraction electrode 159, and It is electrically connected to the side electrode 161 via the electrostatic protection element extraction electrode 158, the electrostatic protection element 157, and the second electrostatic protection element extraction electrode 160.

  According to this configuration, as shown in FIG. 43, the capacitive element 154 and the electrostatic protection element 157 are connected in parallel, and both ends of the capacitive element 154 are connected to the side electrode 161 via the electrostatic protection element 157, respectively. Is done. When viewed from the side electrode 161, this configuration is equivalent to a π-type filter in which two electrostatic protection elements 157 are connected to both ends of the capacitive element 154, respectively.

  According to the configuration of the twelfth embodiment of the present invention described above, since the capacitive element 154 and the electrostatic protection element 157 are connected in parallel, the static electricity applied to the capacitive element 154 can be bypassed by the electrostatic protection element 157. In addition, it is possible to increase the electrostatic pulse resistance of the chip component with the electrostatic protection function.

  In addition, when the chip part with the electrostatic protection function shown in FIG. 41 is attached to a circuit board, for example, a printed wiring board, if the side electrode 161 is connected to the ground, static electricity applied to the capacitor 154 is caused by the electrostatic protection element 157. It can be bypassed to the ground, and the electrostatic pulse tolerance of the chip component with the electrostatic protection function can be increased.

  Further, since the capacitive element 154 and the electrostatic protection element 157 are formed on the same substrate 151, the number of parts increases as if the electrostatic protection element 157 was provided separately from the chip-type capacitive element. As a result, the cost can be reduced and the device using the chip component with the electrostatic protection function can be downsized.

  In the twelfth embodiment of the present invention, as shown in the equivalent circuit diagram of FIG. 43, a π-type configuration in which electrostatic protection elements 157 serving as bypass paths to the ground are connected before and after the capacitive element 154, respectively. Thus, since the static electricity can be bypassed regardless of the direction in which the static electricity enters, there is an effect that there is no need to consider the directionality when the chip component with the electrostatic protection function is mounted on the circuit board.

(Embodiment 13)
Hereinafter, a chip part with an electrostatic protection function according to a thirteenth embodiment of the present invention will be described. FIG. 44 is a perspective view of a chip part with an electrostatic protection function in Embodiment 13 of the present invention, and FIG. 45 is an equivalent circuit diagram of the chip part with an electrostatic protection function shown in FIG.

  44 and 45, a substrate 171 is a substrate configured using alumina, for example. On the substrate 171, first and second resistor take-out electrodes 172 and 173, and a resistor 174 electrically connected to the first and second resistor take-out electrodes 172 and 173 are formed. . The external electrodes 175 and 176 are a pair of external electrodes formed at both ends of the substrate 171 and electrically connected to the first and second resistor take-out electrodes 172 and 173. The capacitive element 177 is a capacitive element formed in parallel with the resistor 174 on the substrate 171, and this capacitive element 177 is one of the pair of external electrodes 175 and 176 via the first capacitive element extraction electrode 178. The external electrode 175 is electrically connected. The electrostatic protection element 179 is an electrostatic protection element made of a varistor mainly composed of SiC formed in parallel with the capacitor element 177. The electrostatic protection element 179 is electrically connected to one external electrode 175 of the pair of external electrodes 175 and 176 via the first electrostatic protection element take-out electrode 180, and the second electrostatic protection element 179. The capacitor element 177 and the side electrode 182 formed on the side portion of the substrate 171 are electrically connected via the element extraction electrode 181.

  The above-described chip component with an electrostatic protection function in the thirteenth embodiment of the present invention is shown in an equivalent circuit diagram as shown in FIG. That is, one end of the capacitive element 177 and one end of the electrostatic protection element 179 are both connected to the external electrode 175, and the other end of the capacitive element 177 and the other end of the electrostatic protection element 179 are both connected to the side electrode 182. Therefore, the capacitive element 177 and the electrostatic protection element 179 are connected in parallel.

  In addition, one end of the parallel circuit of the capacitor element 177 and the electrostatic protection element 179 and one end of the resistor 174 are both connected by an external electrode 175. Therefore, the chip component with electrostatic protection function according to the thirteenth embodiment of the present invention has a three-terminal structure having the external electrodes 175 and 176 and the side electrodes 182. By using the side electrode 182 connected to the ground, the static electricity applied to the resistor 174 and the capacitor 177 is reduced by the electrostatic protection element 179 in the RC filter including the resistor 174 and the capacitor 177. Can be bypassed to ground. Thereby, the electrostatic pulse tolerance of the chip component with the electrostatic protection function constituting the RC filter can be improved.

  In addition, since the resistor 174, the capacitor 177, and the electrostatic protection element 179 are formed on the same substrate 171, the RC filter including the resistor 174 and the capacitor 177 and the RC filter are protected from static electricity. The electrostatic protection element 179 can be configured by one chip, and the number of parts does not increase unlike the case where the resistor 174, the capacitor element 177, and the electrostatic protection element 179 are separately provided, thereby reducing the cost. In addition, the device using the chip component with the electrostatic protection function can be reduced in size.

  Next, a manufacturing method and electrical characteristics of the chip component with electrostatic protection function according to the thirteenth embodiment of the present invention will be described.

First, a resistor paste is prepared by adding a resin component such as ethyl cellulose and a solvent component such as butyl carbitol to a mixed powder containing RuO ₂ as a main component and adding an appropriate amount of glass frit, and kneading using a three-roll roll or the like. Is made.

Next, a resin component such as ethyl cellulose and a solvent component such as butyl carbitol are added to a mixed powder containing PbTiO ₃ as a main component and an appropriate amount of glass frit added, and kneaded using a three-roll unit or the like. A capacitive element paste is prepared. In the same manner, by adding a resin component such as ethyl cellulose and a solvent component such as butyl carbitol to a mixed powder containing SiC as a main component and adding an appropriate amount of glass frit, and kneading using a three roll or the like. An electrostatic protection element paste made of varistor paste is prepared. Furthermore, a silver paste is obtained by adding a resin component such as ethyl cellulose and a solvent component such as butyl carbitol to a mixed powder containing silver as a main component and an appropriate amount of glass frit, and kneading using a three-roll roll or the like. Is made.

  Next, a silver paste is screen-printed on a substrate 171 made of alumina, dried at 50 to 150 ° C. for 0.5 to 3 minutes, and then heat-treated at 500 to 900 ° C. for 15 to 180 minutes, whereby the first A resistor extraction electrode 172, a first capacitor element extraction electrode 178, and a first electrostatic protection element extraction electrode 180 are formed.

  Next, a resistor paste is screen-printed so as to cover a part of the first resistor extraction electrode 172 and dried at 50 to 150 ° C. for 0.5 to 3 minutes, and one of the first capacitor element extraction electrodes 178 is formed. Capacitance element paste is screen-printed to cover the part and dried at 50 to 150 ° C. for 0.5 to 3 minutes. Further, an electrostatic protection element paste is screen-printed so as to cover a part of the first electrostatic protection element extraction electrode 180 and dried at 50 to 150 ° C. for 0.5 to 3 minutes. Then, a silver paste constituting the second resistor extraction electrode 173 is screen-printed on the resistor paste and dried at 50 to 150 ° C. for 0.5 to 3 minutes, and then the capacitor element paste and the electrostatic protection element paste are overlaid. A silver paste constituting the second electrostatic protection element extraction electrode 181 is screen-printed and dried at 50 to 150 ° C. for 0.5 to 3 minutes.

  Furthermore, the resistor 174, the capacitor 177, the electrostatic protection element 179, the second resistor extraction electrode 173, and the second electrostatic protection element extraction electrode 181 are formed by heat treatment at 500 to 900 ° C. for 15 to 180 minutes. To do. In this case, since the impedance of the electrostatic protection element 179 depends on the thickness, the thickness of the electrostatic protection element 179 is desirably 200 μm or less in order to exert a sufficient electrostatic absorption effect.

  Next, the substrate is electrically connected to one end of the first resistor extraction electrode 172, one end of the first capacitor element extraction electrode 178, and one end of the first electrostatic protection element extraction electrode 180. A paste made of silver, glass frit, an organic vehicle or the like constituting the external electrode 175 is applied to one end of the external electrode 175, and is electrically bonded to one end of the second resistor extraction electrode 173 so that the other of the substrate 171 A paste made of silver, glass frit, organic vehicle or the like constituting the external electrode 176 is applied to the end. Further, a paste made of silver, glass frit, organic vehicle or the like constituting the side electrode 182 is applied to the side portion of the substrate 171 so as to be electrically joined to one end of the second electrostatic protection element extraction electrode 181. To do. Then, a pair of external electrodes 175 and 176 and side electrodes 182 are formed by heat treatment and baking at 500 to 900 ° C. for 15 to 180 minutes, and the chip component with electrostatic protection function according to the thirteenth embodiment of the present invention is formed. Produced.

  Table 5 shows the electrostatic test results of the conventional RC filter and the chip component with electrostatic protection function according to the thirteenth embodiment of the present invention.

（表５）において、本発明の実施の形態１３における静電気保護機能付きチップ部品は図４５に示した回路図になるように作製し、図４６に示す回路Ａと、図４７に示す回路Ｂとなるように結線した場合のそれぞれの結果を示している。回路Ａは静電気の印加経路Ｘにおける抵抗体１７４の上流に静電気保護素子１７９が配置されるように結線しており、回路Ｂは静電気の印加経路における抵抗体１７４の下流に静電気保護素子１７９が配置されるように結線している。（表５）の従来例からも明らかなように、ＲＣフィルタの中では、抵抗器の方がキャパシタよりも静電気耐量は小さいため、抵抗器に対して特に静電気対策を実施する必要がある。

In (Table 5), the chip component with electrostatic protection function according to the thirteenth embodiment of the present invention is manufactured so as to be the circuit diagram shown in FIG. 45, and the circuit A shown in FIG. 46 and the circuit B shown in FIG. Each result is shown in the case of connection. The circuit A is connected so that the electrostatic protection element 179 is disposed upstream of the resistor 174 in the static electricity application path X, and the electrostatic protection element 179 is disposed downstream of the resistor 174 in the static electricity application path. It is connected as is done. As is clear from the conventional example of (Table 5), in the RC filter, since the resistance of the resistor is smaller than that of the capacitor, it is necessary to take a countermeasure against static electricity especially for the resistor.

  In Table 5, in the circuit A of the chip component with electrostatic protection function according to the thirteenth embodiment of the present invention, since the electrostatic protection element 179 serves as a bypass path for both the resistor 174 and the capacitor 177, the electrostatic application Later, both the resistance value (R value) of the resistor 174 and the capacitance value (C value) of the capacitor 177 do not change. On the other hand, in the circuit B, the electrostatic protection element 179 made of a varistor containing SiC as a main component works as a bypass path for the capacitor element 177, but does not work for the resistor 174. Therefore, it is desirable to connect the chip component with electrostatic protection function in the thirteenth embodiment of the present invention in the form of circuit A. However, even in the circuit B, regarding the circuits and devices further downstream than the chip component with the electrostatic protection function, since the electrostatic protection element 179 functions as a bypass path for static electricity, compared to a conventional RC filter that does not use the electrostatic protection element 179. High protective effect. Therefore, even in the configuration of the circuit B, it is possible to protect circuits and devices downstream of the electrostatic protection element 179 from static electricity.

  As described above, it is important to connect the static electricity application path so that the static electricity protection element 179 is disposed upstream of the resistor 174. In consideration of this, as shown in FIG. Even in the circuit, the same effect as in the thirteenth embodiment of the present invention can be obtained if the connection direction is not mistaken. Further, as shown in FIG. 49, if two electrostatic protection elements 179 made of varistors mainly composed of SiC are formed in a π shape with respect to the resistor 174, it is not necessary to consider the directionality during mounting, Regardless of the direction in which the abnormal voltage is applied, the resistor 174 can be protected.

  Although the RC filter has been described in the thirteenth embodiment of the present invention, noise can be reduced by forming the electrostatic protection element 179 on the same substrate for other filters such as an LC filter and an LR filter. It has the effect that countermeasures and countermeasures against static electricity can be performed simultaneously.

  Also in the RC filter as an example of the chip component with electrostatic protection function in the thirteenth embodiment of the present invention, a varistor mainly composed of SiC on the capacitive element 177 as in the eighth embodiment of the present invention. When the electrostatic protection element 179 made of is laminated and formed, the capacitive element 177 is formed on one surface of the substrate 171 and the substrate 171 is placed on one surface of the substrate 171 as in the ninth embodiment of the present invention. When the electrostatic protection element 179 is formed so as to be substantially opposed to the capacitive element 177, or as in the tenth embodiment of the present invention, the mixture including the capacitive element 134a and the electrostatic protection element 134b When the element 177 and the electrostatic protection element 179 are formed together, the same effects as those of the eighth, ninth and tenth embodiments of the present invention can be exhibited.

  In the seventh to thirteenth embodiments of the present invention described above, the electrostatic protection elements 107, 117, 127, 134b, 147, 157, and 179 have been described using varistors mainly composed of SiC. Other than this, for example, even when a varistor mainly composed of ZnO, a protective element made of a metal powder and a resin, or the like is used, the same as in Embodiments 7 to 13 of the present invention. It has an effect.

  In the seventh embodiment of the present invention, as shown in FIG. 27, a sandwich structure in which the electrostatic protection element 107 is sandwiched between the first electrostatic protection element extraction electrode 108 and the second electrostatic protection element extraction electrode 109. However, the present invention is not limited to this connection structure. For example, as shown in FIG. 50, the first and second electrostatic protection element extraction electrodes 108 and 109 are connected to the substrate 101. The gap is formed on one surface of the electrode, and the electrostatic protection element 107 is formed on the first and second electrostatic protection element extraction electrodes 108 and 109 so as to fill the gap. You may make it plan.

  In the ninth embodiment of the present invention, as shown in FIG. 33, electrical connection is achieved with a sandwich structure in which the capacitive element 124 is sandwiched between the first extraction electrode 122 and the second extraction electrode 123. However, the present invention is not limited to this connection structure. For example, as shown in FIG. 51, first and second extraction electrodes 122 and 123 are formed with a gap on one surface of the substrate 121. The gap may be electrically connected with a gap structure in which a capacitive element 124 is formed on the first and second extraction electrodes 122 and 123 so as to fill the gap.

  Furthermore, in Embodiment 10 of the present invention, as shown in FIG. 35, a sandwich structure in which a mixture 134 including a capacitive element and a protective element is sandwiched between a first extraction electrode 132 and a second extraction electrode 133. However, the present invention is not limited to this connection structure. For example, as shown in FIG. 52, the first and second extraction electrodes 132 and 133 are connected to one surface of the substrate 131. A gap structure is formed in which a mixture 134 including a capacitive element and a protective element is formed on the first and second extraction electrodes 132 and 133 so as to fill the gap. You may make it plan.

  Furthermore, in the eleventh embodiment of the present invention, as shown in FIGS. 38 and 39, the electrostatic protection element 147 is composed of the first electrostatic protection element extraction electrode 148 and the second electrostatic protection element extraction electrode 149. The sandwiched sandwich structure is used for electrical connection. However, the present invention is not limited to this connection structure. For example, as shown in FIGS. 53 and 54, the first and second electrostatic protection element take-out electrodes 148, 149 are formed with a gap on one surface of the substrate 141, and the electrostatic protection element 147 is formed on the first and second electrostatic protection element take-out electrodes 148, 149 so as to fill the gap. Electrical connection may be achieved with a structure.

  In the twelfth embodiment of the present invention, as shown in FIGS. 41 and 42, the electrostatic protection element 157 is replaced with the first and third electrostatic protection element extraction electrodes 158 and 159 and the second electrostatic protection element extraction. The electrical connection is achieved by a sandwich structure sandwiched between the electrodes 160, but the present invention is not limited to this connection structure. For example, as shown in FIGS. 55 and 56, the first, second, second 3 are formed with a gap on one surface of the substrate 151, and the first, second and third electrostatic protection element take-out electrodes 158, 160 are formed so as to fill the gap. , 159 may be electrically connected with a gap structure in which an electrostatic protection element 157 is formed.

  In the thirteenth embodiment of the present invention, as shown in FIG. 44, a sandwich structure in which the electrostatic protection element 179 is sandwiched between the first electrostatic protection element extraction electrode 180 and the second electrostatic protection element extraction electrode 181. However, the present invention is not limited to this connection structure. For example, as shown in FIG. 57, the first electrostatic protection element extraction electrode 180 and the second electrostatic protection element are extracted. The electrode 181 is formed with a gap on one surface of the substrate 171, and the electrostatic protection element is placed on the first electrostatic protection element extraction electrode 180 and the second electrostatic protection element extraction electrode 181 so as to fill the gap. The electrical connection may be achieved with a gap structure in which 179 is formed.

  As described above, a chip component with an electrostatic protection function according to the present invention includes a substrate, a circuit element formed on the substrate, an electrostatic protection element formed in parallel with the circuit element on the substrate, A pair of external electrodes formed on both ends of the substrate for connecting the circuit element and the protection element to an external circuit are provided.

  According to this configuration, the circuit element formed on the substrate is protected from static electricity by the electrostatic protection element formed in parallel with the circuit element on the same substrate. It is possible to take countermeasures against static electricity of circuit elements with a single chip component with an electrostatic protection function. As a result, the number of parts does not increase unlike the case where noise countermeasure parts and static electricity countermeasure parts are provided separately on the same signal line, so that the cost can be reduced and the chip part with the electrostatic protection function can be reduced. It is easy to reduce the size of the equipment used.

  The circuit element is preferably a resistor. According to this configuration, the resistor that may be deteriorated by static electricity can be protected from the static electricity by the static electricity protection element.

  The resistor is preferably formed using a resistor paste, and the electrostatic protection element is preferably formed using an electrostatic protection element paste. According to this configuration, since the resistor and the electrostatic protection element can be formed using the resistor paste and the electrostatic protection element paste, the resistor is formed when the electrostatic protection element is formed. The electrostatic protection element can be formed by a simple method of printing and baking the electrostatic protection element paste using the same method. Thereby, the manufacturing process of the chip component with the electrostatic protection function can be simplified, and the production cost can be reduced.

  Further, the chip component with an electrostatic protection function according to the present invention is formed on a substrate, a resistor formed on the substrate, an electrostatic protection element formed on the substrate, and both ends of the substrate, A pair of external electrodes for connecting the resistor and the protection element to an external circuit; According to this configuration, the resistor that may be deteriorated by static electricity can be protected from the static electricity by the static electricity protection element.

  Moreover, it is preferable that the said resistor and the said electrostatic protection element are integrally formed using the mixed paste containing a resistor powder, electrostatic protection element powder, and glass frit. According to this configuration, when the resistor and the electrostatic protection element are individually formed, the printing process of the resistor powder and the printing process of the electrostatic protection element powder can be replaced with the printing process of the mixed paste. The printing process is reduced, and the production cost can be reduced. Furthermore, since the electrostatic protection element is formed in the same portion as the resistor, the chip component with the electrostatic protection function can be miniaturized.

  The circuit element may be a capacitive element. According to this configuration, the capacitive element that may be deteriorated by static electricity can be protected from the static electricity by the electrostatic protection element.

  The capacitive element may be formed using a capacitive element paste, and the electrostatic protection element may be formed using an electrostatic protective element paste.

  According to this configuration, since the capacitive element and the electrostatic protection element can be formed using the capacitive element paste and the electrostatic protection element paste, when the electrostatic protection element is formed, the capacitive element is formed. The electrostatic protection element can be formed by a simple method of printing and baking the electrostatic protection element paste using the same method. Thereby, the manufacturing process of the chip component with the electrostatic protection function can be simplified, and the production cost can be reduced.

  Further, a chip component with an electrostatic protection function according to the present invention is formed on a substrate, a capacitive element formed on the substrate, an electrostatic protection element formed on the substrate, and both ends of the substrate, A pair of external electrodes for connecting the capacitive element and the protection element to an external circuit; According to this configuration, the capacitive element that may be deteriorated by static electricity can be protected from the static electricity by the electrostatic protection element.

  The capacitive element and the electrostatic protection element may be integrally formed using a mixed paste containing capacitive element powder, electrostatic protection element powder, and glass frit.

  According to this configuration, the printing process of the capacitive element powder and the printing process of the electrostatic protection element powder in the case where the capacitive element and the electrostatic protection element are individually formed can be replaced with the mixed paste printing process. The number of processes is reduced, and the production cost can be reduced. Furthermore, since the electrostatic protection element is formed in the same portion as the capacitor element, it is possible to reduce the size of the chip component with the electrostatic protection function.

  Further, both ends of the circuit element are electrically connected to the pair of external electrodes through first and second circuit element extraction electrodes formed on the substrate, respectively, It is preferable that the first and second electrostatic protection element take-out electrodes are electrically connected to the pair of external electrodes, respectively.

  According to this configuration, the circuit element and the electrostatic protection element are electrically connected in parallel by the first and second circuit element extraction electrodes and the first and second electrostatic protection element extraction electrodes, and the pair of external electrodes As a result, it is possible to bypass the static electricity applied to the circuit element by the electrostatic protection element. It is possible to increase the electrostatic pulse resistance of the functional chip component.

  Further, both ends of the circuit element are electrically connected to first and second extraction electrodes respectively connected to the pair of external electrodes, and the electrostatic protection element is laminated on the circuit element. Preferably, the electrodes are formed in parallel and electrically connected to the third extraction electrode and the second extraction electrode connected to the first extraction electrode.

  According to this configuration, the circuit element and the electrostatic protection element are electrically connected in parallel by the first, second, and third extraction electrodes and connected to the pair of external electrodes. As a result, the circuit element and the electrostatic protection element are electrically connected in parallel, and the static electricity applied to the circuit element can be bypassed by the electrostatic protection element, thereby increasing the electrostatic pulse resistance of the chip component with the electrostatic protection function. Can do. Further, since the circuit element and the electrostatic protection element are laminated on the substrate, the circuit element and the electrostatic protection element are formed more than when the circuit element and the electrostatic protection element are formed side by side on one surface of the substrate. As a result of the reduction of the area occupied on the substrate, the chip component with the electrostatic protection function can be reduced in size.

  The circuit element is formed on one surface of the substrate, and both ends of the circuit element are connected to the pair of first and second circuit element extraction electrodes formed on one surface of the substrate. Preferably, the electrostatic protection elements are electrically connected to external electrodes, respectively, and the electrostatic protection elements are formed in parallel on the other surface of the substrate so as to substantially face the circuit elements.

  According to this configuration, the circuit element formed on the substrate is protected from static electricity by the electrostatic protection element, the circuit element is formed on one surface of the substrate, and the electrostatic protection element is disposed on the other surface of the substrate. Since it is formed in parallel so as to be substantially opposite to the element, the board area can be reduced compared to the case where the circuit element and the electrostatic protection element are arranged side by side on one side of the board, and as a result, an electrostatic protection function is provided. Chip components can be reduced in size.

  In addition, both ends of the circuit element are electrically connected to first and second extraction electrodes respectively connected to the pair of external electrodes, and the electrostatic protection element includes a first protection element extraction electrode. And is electrically connected to one of the pair of external electrodes via a second protective element extraction electrode and to a side electrode formed on the side of the substrate. It is preferable that

  According to this configuration, when the above-described chip component with an electrostatic protection function is connected to an external circuit, the circuit element and the electrostatic protection element are connected by connecting the other of the pair of external electrodes and the side electrode. As a result of the parallel connection, the static electricity applied to the circuit element can be bypassed by the electrostatic protection element, and the electrostatic pulse resistance of the chip component with the electrostatic protection function can be increased. In addition, when connecting the above-mentioned chip component with an electrostatic protection function to an external circuit, if the side electrode is connected to the ground, the static electricity applied to the circuit element can be bypassed to the ground by the electrostatic protection element, It is possible to increase the electrostatic pulse tolerance of the chip component with the electrostatic protection function.

  Moreover, it is preferable that the electrostatic protection element is further electrically connected to the other external electrode of the pair of external electrodes via a third protection element extraction electrode.

  According to this configuration, the circuit element and the electrostatic protection element are connected in parallel, and both ends of the circuit element are connected to the side electrode via the electrostatic protection element. Then, the static electricity applied to the circuit element is bypassed by the static electricity protection element connected in parallel with the circuit element, so that the electrostatic pulse resistance of the chip component with the static electricity protection function can be increased. In addition, since both ends of the circuit element are connected to the side electrodes through the electrostatic protection elements, respectively, when viewed from the side electrode, two electrostatic protection elements are respectively provided at both ends of the circuit element. It becomes the structure connected one by one. Then, when connecting the chip component with the electrostatic protection function to the external circuit, if the side electrode is connected to the ground, the static electricity applied to the circuit element can be bypassed to the ground by the electrostatic protection element. It is possible to increase the electrostatic pulse resistance of the functional chip component. In addition, since electrostatic protection elements that serve as bypass paths to the ground are connected before and after the circuit elements, it is necessary to consider the directionality when connecting chip components with electrostatic protection functions to external circuits. Absent.

  Moreover, it is preferable that the said side part electrode is formed in the side part of the both sides in the said board | substrate. According to this configuration, it is not necessary to consider the directionality of the side electrodes when connecting the chip component with an electrostatic protection function to an external circuit.

  The circuit element is a resistor, and is further electrically connected to the one external electrode via a capacitive element take-out electrode, and the side electrode via the second protective element take-out electrode. It is preferable that a capacitive element electrically connected to the resistor is formed on the substrate in parallel with the resistor.

  According to this configuration, since the capacitive element and the electrostatic protection element are connected in parallel, static electricity applied to the capacitive element can be bypassed by the electrostatic protection element, and the capacitive element can be protected from static electricity. Further, by using the side electrode connected to the ground, static electricity applied to the resistor can be bypassed to the ground by the electrostatic protection element, and the resistor can be protected from static electricity. As a result, the electrostatic pulse resistance can be increased for a circuit including a resistor and a capacitive element. In addition, since the resistor, the capacitive element, and the electrostatic protection element are formed on the same substrate, a circuit including the resistor and the capacitive element and an electrostatic protection element that protects the circuit from static electricity are combined into one component. As compared with the case where the resistor, the capacitive element, and the electrostatic protection element are separately provided, the increase in the number of parts can be suppressed and the electrostatic pulse resistance of the chip part with the electrostatic protection function can be increased.

  Since the chip component with the electrostatic protection function according to the present invention has a high electrostatic pulse withstand capability, and the electrostatic protection element is formed on the substrate on which the capacitive element is formed, the electrostatic protective element is referred to as the capacitive element. The number of parts does not increase unlike the case of a separately provided device, which has the effect of reducing costs and downsizing the equipment, and requires countermeasures against static electricity such as mobile phones and televisions. It can be applied to a simple circuit.

  The present invention relates to a chip component with an electrostatic protection function capable of increasing an electrostatic pulse resistance.

  In recent years, electronic devices such as mobile phones have been rapidly reduced in size and performance, and accordingly, circuit elements used in electronic devices have also been rapidly reduced in size. However, with this miniaturization, the insulation distance inside the equipment is shortened, so that static electricity applied to the equipment casing and operation switches can be easily discharged to the signal circuit inside the equipment, Due to the miniaturization of the manufacturing process associated with the miniaturization of the device itself, the conductor inside the circuit element is miniaturized and the current capacity is reduced. Therefore, the electrostatic pulse resistance of electronic devices and circuit elements tends to be reduced. As a result, an electric circuit inside the device is increasingly destroyed by an electrostatic pulse generated when the human body and the terminal of the electronic device come into contact with each other. This is because a high voltage of a pulse width of 1 nanosecond or less and several hundred to several kilovolts is applied to an electric circuit inside the device by an electrostatic pulse.

  In particular, circuit elements such as bypass capacitors, resistors, and RC filters used for noise countermeasures in signal circuits have been reduced in size, and accordingly, electrostatic pulse resistance of these circuit elements has been reduced. And as mentioned above, with the miniaturization of equipment, high voltage noise such as static electricity has invaded into these signal circuits, and the electrostatic pulse resistance of circuit elements has been reduced. There are an increasing number of cases in which circuit elements such as bypass capacitors, resistors, and RC filters are protected from static electricity by antistatic components such as varistors.

  Conventionally, as a countermeasure against static electricity of such circuit elements and peripheral circuits, electrostatic pulsators or capacitors with large electrostatic capacity are connected in parallel with these circuit elements to absorb static electricity or bypass static electricity to ground. The tolerance was secured.

As prior art document information relating to the invention of this application, for example, Patent Document 1 is known.
JP-A-8-162303

  Conventionally, in portable devices such as mobile phones and small devices, as a countermeasure against static electricity, the case and shield plate are securely grounded to release static electricity to the ground and prevent intrusion of static electricity into internal circuits. ing. However, as portable devices become smaller in size, it has become difficult to ground the casing and shield plate. As a result, it is possible to intrude static electricity into the circuit, and as a result, there are an increasing number of cases where parts with low electrostatic pulse resistance are destroyed. For example, a chip-type resistor is manufactured by a simple method of printing a resistor paste on a substrate and firing it, and has a small electrostatic pulse resistance against electrostatic pulses and surge voltages.

  Therefore, in order to protect the chip resistor and other devices from static electricity, a varistor or capacitor is connected in parallel to the chip resistor to absorb static electricity or bypass it in many cases. Recently, in addition to communication noise (especially in mobile phones), the influence of harmonic noise on the operating frequency of integrated circuits and unnecessary radiation of electromagnetic waves radiated from the circuit board to the outside has become a problem. Therefore, the need for noise countermeasure parts such as bypass capacitors and RC filters is increasing, so these noise countermeasure parts are often attached to the same signal line as the above-mentioned static electricity countermeasures. . However, if a noise countermeasure component and an electrostatic countermeasure component are separately provided on the same signal line, there is a problem that the cost increases due to an increase in the number of components, and the size of the device increases.

  SUMMARY OF THE INVENTION The present invention solves the above-described conventional problems, and an object of the present invention is to provide a chip component with an electrostatic protection function capable of increasing an electrostatic pulse resistance while suppressing an increase in the number of components.

  A chip component with an electrostatic protection function according to the present invention includes a substrate, a circuit element formed on the substrate, an electrostatic protection element formed in parallel with the circuit element on the substrate, and both ends of the substrate. And a pair of external electrodes formed to connect the circuit element and the protection element to an external circuit.

  According to this configuration, the circuit element formed on the substrate is protected from static electricity by the electrostatic protection element formed in parallel with the circuit element on the same substrate. It is possible to take countermeasures against static electricity of circuit elements with a single chip component with an electrostatic protection function. As a result, the number of parts does not increase unlike the case where noise countermeasure parts and static electricity countermeasure parts are provided separately on the same signal line, so that the cost can be reduced and the chip part with the electrostatic protection function can be reduced. It is easy to reduce the size of the equipment used.

  The circuit element is preferably a resistor. According to this configuration, the resistor that may be deteriorated by static electricity can be protected from the static electricity by the static electricity protection element.

  The resistor is preferably formed using a resistor paste, and the electrostatic protection element is preferably formed using an electrostatic protection element paste. According to this configuration, since the resistor and the electrostatic protection element can be formed using the resistor paste and the electrostatic protection element paste, the resistor is formed when the electrostatic protection element is formed. The electrostatic protection element can be formed by a simple method of printing and baking the electrostatic protection element paste using the same method. Thereby, the manufacturing process of the chip component with the electrostatic protection function can be simplified, and the production cost can be reduced.

  Further, the chip component with an electrostatic protection function according to the present invention is formed on a substrate, a resistor formed on the substrate, an electrostatic protection element formed on the substrate, and both ends of the substrate, A pair of external electrodes for connecting the resistor and the protection element to an external circuit; According to this configuration, the resistor that may be deteriorated by static electricity can be protected from the static electricity by the static electricity protection element.

  Moreover, it is preferable that the said resistor and the said electrostatic protection element are integrally formed using the mixed paste containing a resistor powder, electrostatic protection element powder, and glass frit. According to this configuration, when the resistor and the electrostatic protection element are individually formed, the printing process of the resistor powder and the printing process of the electrostatic protection element powder can be replaced with the printing process of the mixed paste. The printing process is reduced, and the production cost can be reduced. Furthermore, since the electrostatic protection element is formed in the same portion as the resistor, the chip component with the electrostatic protection function can be miniaturized.

  The circuit element may be a capacitive element. According to this configuration, the capacitive element that may be deteriorated by static electricity can be protected from the static electricity by the electrostatic protection element.

  The capacitive element may be formed using a capacitive element paste, and the electrostatic protection element may be formed using an electrostatic protective element paste.

  According to this configuration, since the capacitive element and the electrostatic protection element can be formed using the capacitive element paste and the electrostatic protection element paste, when the electrostatic protection element is formed, the capacitive element is formed. The electrostatic protection element can be formed by a simple method of printing and baking the electrostatic protection element paste using the same method. Thereby, the manufacturing process of the chip component with the electrostatic protection function can be simplified, and the production cost can be reduced.

  Further, a chip component with an electrostatic protection function according to the present invention is formed on a substrate, a capacitive element formed on the substrate, an electrostatic protection element formed on the substrate, and both ends of the substrate, A pair of external electrodes for connecting the capacitive element and the protection element to an external circuit; According to this configuration, the capacitive element that may be deteriorated by static electricity can be protected from the static electricity by the electrostatic protection element.

  The capacitive element and the electrostatic protection element may be integrally formed using a mixed paste containing capacitive element powder, electrostatic protection element powder, and glass frit.

  According to this configuration, the printing process of the capacitive element powder and the printing process of the electrostatic protection element powder in the case where the capacitive element and the electrostatic protection element are individually formed can be replaced with the mixed paste printing process. The number of processes is reduced, and the production cost can be reduced. Furthermore, since the electrostatic protection element is formed in the same portion as the capacitor element, it is possible to reduce the size of the chip component with the electrostatic protection function.

  Further, both ends of the circuit element are electrically connected to the pair of external electrodes through first and second circuit element extraction electrodes formed on the substrate, respectively, It is preferable that the first and second electrostatic protection element take-out electrodes are electrically connected to the pair of external electrodes, respectively.

  According to this configuration, the circuit element and the electrostatic protection element are electrically connected in parallel by the first and second circuit element extraction electrodes and the first and second electrostatic protection element extraction electrodes, and the pair of external electrodes As a result, it is possible to bypass the static electricity applied to the circuit element by the electrostatic protection element. It is possible to increase the electrostatic pulse resistance of the functional chip component.

  Further, both ends of the circuit element are electrically connected to first and second extraction electrodes respectively connected to the pair of external electrodes, and the electrostatic protection element is laminated on the circuit element. Preferably, the electrodes are formed in parallel and electrically connected to the third extraction electrode and the second extraction electrode connected to the first extraction electrode.

  According to this configuration, the circuit element and the electrostatic protection element are electrically connected in parallel by the first, second, and third extraction electrodes and connected to the pair of external electrodes. As a result, the circuit element and the electrostatic protection element are electrically connected in parallel, and the static electricity applied to the circuit element can be bypassed by the electrostatic protection element, thereby increasing the electrostatic pulse resistance of the chip component with the electrostatic protection function. Can do. Further, since the circuit element and the electrostatic protection element are laminated on the substrate, the circuit element and the electrostatic protection element are formed more than when the circuit element and the electrostatic protection element are formed side by side on one surface of the substrate. As a result of the reduction of the area occupied on the substrate, the chip component with the electrostatic protection function can be reduced in size.

  The circuit element is formed on one surface of the substrate, and both ends of the circuit element are connected to the pair of first and second circuit element extraction electrodes formed on one surface of the substrate. Preferably, the electrostatic protection elements are electrically connected to external electrodes, respectively, and the electrostatic protection elements are formed in parallel on the other surface of the substrate so as to substantially face the circuit elements.

  According to this configuration, the circuit element formed on the substrate is protected from static electricity by the electrostatic protection element, the circuit element is formed on one surface of the substrate, and the electrostatic protection element is disposed on the other surface of the substrate. Since it is formed in parallel so as to be substantially opposite to the element, the board area can be reduced compared to the case where the circuit element and the electrostatic protection element are arranged side by side on one side of the board, and as a result, an electrostatic protection function is provided. Chip components can be reduced in size.

  In addition, both ends of the circuit element are electrically connected to first and second extraction electrodes respectively connected to the pair of external electrodes, and the electrostatic protection element includes a first protection element extraction electrode. And is electrically connected to one of the pair of external electrodes via a second protective element extraction electrode and to a side electrode formed on the side of the substrate. It is preferable that

  According to this configuration, when the above-described chip component with an electrostatic protection function is connected to an external circuit, the circuit element and the electrostatic protection element are connected by connecting the other of the pair of external electrodes and the side electrode. As a result of the parallel connection, the static electricity applied to the circuit element can be bypassed by the electrostatic protection element, and the electrostatic pulse resistance of the chip component with the electrostatic protection function can be increased. In addition, when connecting the above-mentioned chip component with an electrostatic protection function to an external circuit, if the side electrode is connected to the ground, the static electricity applied to the circuit element can be bypassed to the ground by the electrostatic protection element, It is possible to increase the electrostatic pulse tolerance of the chip component with the electrostatic protection function.

  Moreover, it is preferable that the electrostatic protection element is further electrically connected to the other external electrode of the pair of external electrodes via a third protection element extraction electrode.

  According to this configuration, the circuit element and the electrostatic protection element are connected in parallel, and both ends of the circuit element are connected to the side electrode via the electrostatic protection element. Then, the static electricity applied to the circuit element is bypassed by the static electricity protection element connected in parallel with the circuit element, so that the electrostatic pulse resistance of the chip component with the static electricity protection function can be increased. In addition, since both ends of the circuit element are connected to the side electrodes through the electrostatic protection elements, respectively, when viewed from the side electrode, two electrostatic protection elements are respectively provided at both ends of the circuit element. It becomes the structure connected one by one. Then, when connecting the chip component with the electrostatic protection function to the external circuit, if the side electrode is connected to the ground, the static electricity applied to the circuit element can be bypassed to the ground by the electrostatic protection element. It is possible to increase the electrostatic pulse resistance of the functional chip component. In addition, since electrostatic protection elements that serve as bypass paths to the ground are connected before and after the circuit elements, it is necessary to consider the directionality when connecting chip components with electrostatic protection functions to external circuits. Absent.

  Moreover, it is preferable that the said side part electrode is formed in the side part of the both sides in the said board | substrate. According to this configuration, it is not necessary to consider the directionality of the side electrodes when connecting the chip component with an electrostatic protection function to an external circuit.

  The circuit element is a resistor, and is further electrically connected to the one external electrode via a capacitive element take-out electrode, and the side electrode via the second protective element take-out electrode. It is preferable that a capacitive element electrically connected to the resistor is formed on the substrate in parallel with the resistor.

  According to this configuration, since the capacitive element and the electrostatic protection element are connected in parallel, static electricity applied to the capacitive element can be bypassed by the electrostatic protection element, and the capacitive element can be protected from static electricity. Further, by using the side electrode connected to the ground, static electricity applied to the resistor can be bypassed to the ground by the electrostatic protection element, and the resistor can be protected from static electricity. As a result, the electrostatic pulse resistance can be increased for a circuit including a resistor and a capacitive element. In addition, since the resistor, the capacitive element, and the electrostatic protection element are formed on the same substrate, a circuit including the resistor and the capacitive element and an electrostatic protection element that protects the circuit from static electricity are combined into one component. As compared with the case where the resistor, the capacitive element, and the electrostatic protection element are separately provided, the increase in the number of parts can be suppressed and the electrostatic pulse resistance of the chip part with the electrostatic protection function can be increased.

  In the chip component with the electrostatic protection function having such a configuration, the circuit element formed on the substrate is protected from static electricity by the electrostatic protection element formed in parallel with the circuit element on the same substrate. The circuit element used and the countermeasure against static electricity of the circuit element can be performed by a single chip component with an electrostatic protection function. As a result, the number of parts does not increase unlike the case where noise countermeasure parts and static electricity countermeasure parts are provided separately on the same signal line, so that the cost can be reduced and the chip part with the electrostatic protection function can be reduced. It is easy to reduce the size of the equipment used.

  Moreover, the chip component with the electrostatic protection function having such a configuration can protect the resistor that may be deteriorated by static electricity from the static electricity by the electrostatic protection element.

  And the chip component with the electrostatic protection function having such a configuration can protect the capacitive element that may be deteriorated by static electricity from the static electricity by the electrostatic protection element.

(Embodiment 1)
Hereinafter, a chip resistor with an electrostatic protection function which is an example of a chip component with an electrostatic protection function in Embodiment 1 of the present invention will be described. 1 is a perspective view of a chip resistor with an electrostatic protection function according to Embodiment 1 of the present invention, FIG. 2 is a sectional view taken along line 2-2 in FIG. 1, and FIG. 3 is a chip resistor with an electrostatic protection function shown in FIG. It is an equivalent circuit diagram of a vessel.

  1 and 2, a substrate 1 is a substrate configured using alumina, for example. On one surface of the substrate 1, first and second resistor take-out electrodes 2 and 3 are provided. The resistor 4 is formed by being electrically connected between the first resistor take-out electrode 2 and the second resistor take-out electrode 3. The external electrodes 5 and 6 are a pair of external electrodes formed at both ends of the substrate 1 and electrically connected to the first and second resistor take-out electrodes 2 and 3. The electrostatic protection element 7 is a protection element made of a varistor mainly composed of SiC formed in parallel with the resistor 4 on one surface of the substrate 1. When an overvoltage is applied by, for example, an electrostatic pulse or a surge voltage, Impedance decreases. The electrostatic protection element 7 is electrically connected to a pair of external electrodes 5 and 6 via first and second electrostatic protection element take-out electrodes 8 and 9.

  With the above structure, the resistor 4 and the electrostatic protection element 7 can be formed in parallel on the same substrate 1, so that an equivalent circuit as shown in FIG. 3 can be formed.

  Next, a manufacturing method and electrical characteristics of the chip resistor with electrostatic protection function according to the first embodiment of the present invention will be described.

First, by adding a resin component such as ethyl cellulose and a solvent component such as butyl carbitol to a mixed powder containing RuO ₂ as a main component and adding an appropriate amount of glass frit, kneading using a three-roll roll or the like. A resistor paste is prepared. In the same manner, by adding a resin component such as ethyl cellulose and a solvent component such as butyl carbitol to a mixed powder containing SiC as a main component and adding an appropriate amount of glass frit, kneading using a three roll or the like. An electrostatic protection element paste made of varistor paste is prepared. Furthermore, by adding a resin component such as ethyl cellulose and a solvent component such as butyl carbitol to a mixed powder containing silver as a main component and an appropriate amount of glass frit, the mixture is kneaded using a three-roll roll or the like. Make a paste.

  Next, a silver paste is screen-printed on one surface of the substrate 1 made of alumina and dried at 50 to 150 ° C. for 0.5 to 3 minutes, and then heat-treated at 500 to 900 ° C. for 15 to 180 minutes, A first resistor take-out electrode 2 and a first electrostatic protection element take-out electrode 8 are formed.

  Next, a resistor paste is screen-printed so as to cover a part of the first resistor extraction electrode 2 and dried at 50 to 150 ° C. for 0.5 to 3 minutes. Then, an electrostatic protection element paste is screen-printed so as to cover a part of the first electrostatic protection element take-out electrode 8 and dried at 50 to 150 ° C. for 0.5 to 3 minutes. Thereafter, silver paste for forming the second resistor extraction electrode 3 and the second electrostatic protection element extraction electrode 9 is screen-printed on the dried resistor paste and the electrostatic protection element paste, respectively. Dry at 150 ° C. for 0.5-3 minutes. And the resistor 4, the electrostatic protection element 7, the 2nd resistor extraction electrode 3, and the 2nd electrostatic protection element extraction electrode 9 are formed by heat-processing for 15 to 180 minutes at 500-900 degreeC. In this case, the thickness of the resistor 4 is preferably formed between 20 and 200 μm in order to secure a desired resistance value. Moreover, since the impedance of the electrostatic protection element 7 depends on the thickness, the thickness of the electrostatic protection element 7 is desirably 200 μm or less in order to exhibit a sufficient electrostatic absorption effect.

  Finally, silver, glass frit, organic vehicle or the like is applied to one end of the substrate 1 so as to be electrically joined to one end of the first resistor extraction electrode 2 and the first electrostatic protection element extraction electrode 8. The other end of the substrate 1 is coated with silver, glass frit, so as to be electrically bonded to one end of the second resistor extraction electrode 3 and the second electrostatic protection element extraction electrode 9. Apply paste made of organic vehicle. Thereafter, a pair of external electrodes 5 and 6 were formed by heat treatment at 500 to 900 ° C. for 15 to 180 minutes, and a chip resistor with an electrostatic protection function in Embodiment 1 of the present invention was produced.

  (Table 1) shows the electrostatic test results of the conventional chip resistor and the chip resistor with electrostatic protection function according to the first embodiment of the present invention.

静電気試験条件は国際規格ＩＥＣ６１０００−４−２（人体モデル）に準拠して行った。（表１）から明らかなように、従来例では静電気を２ｋＶ印加した後、及び４ｋＶ印加した後においては、抵抗値が初期値に比べて低下し、そして静電気を８ｋＶ印加した後、１５ｋＶ印加した後においては、抵抗値が初期値に比べて大きく低下するという抵抗値の変化が見られたが、本発明の実施の形態１においては静電気を２ｋＶ印加した後、４ｋＶ印加した後、８ｋＶ印加した後、１５ｋＶ印加した後においても、初期値に比べて抵抗値の変化は見られなかった。

The electrostatic test conditions were performed in accordance with the international standard IEC61000-4-2 (human body model). As is clear from Table 1, in the conventional example, after applying 2 kV of static electricity and after applying 4 kV, the resistance value decreased compared to the initial value, and after applying 8 kV of static electricity, 15 kV was applied. Later, a change in resistance value was observed in which the resistance value greatly decreased compared to the initial value, but in the first embodiment of the present invention, 2 kV was applied, 4 kV was applied, and 8 kV was applied. Later, even after 15 kV was applied, the resistance value did not change compared to the initial value.

  This is because, when static electricity is applied to a conventional chip resistor, the static electricity must pass through a resistor on the circuit, so that the resistance value of a conventional chip resistor that is sensitive to static electricity is lowered. On the other hand, in the chip resistor with electrostatic protection function according to the first embodiment of the present invention, when static electricity is applied, the static electricity bypasses the electrostatic protection element 7 side. This is because no static electricity is applied to the resistor 4 of the chip resistor and the resistance value does not change. This is because the electrostatic protection element 7 is normally open because it has a high impedance. However, when a high voltage of several kV or more is applied due to static electricity, the electrostatic protection element 7 suddenly decreases its impedance and discharges static electricity. It will be preferentially bypassed. Then, since the impedance of the electrostatic protection element 7 is restored and increased again after the static electricity has passed, it is possible to suppress the resistance value of the chip resistor with the electrostatic protection function from changing due to static electricity.

  Thus, by forming the electrostatic protection element 7 in parallel with the resistor 4, static electricity can be bypassed by the electrostatic protection element 7. In order to increase the static electricity bypass effect of the static electricity protection element 7, it is better to lower the impedance of the static electricity protection element 7. Therefore, the thickness of the static electricity protection element 7 is desirably 200 μm or less.

(Embodiment 2)
Hereinafter, a chip resistor with an electrostatic protection function which is an example of a chip component with an electrostatic protection function in the second embodiment will be described. 4 is a perspective view of a chip resistor with an electrostatic protection function according to Embodiment 2 of the present invention, and FIG. 5 is a cross-sectional view of the chip resistor with an electrostatic protection function shown in FIG.

  4 and 5, the substrate 11 is a substrate configured using alumina, for example. First and second extraction electrodes 12 and 13 are provided on one surface of the substrate 11. Further, the resistor 14 is formed by being electrically connected between the first extraction electrode 12 and the second extraction electrode 13, and the first extraction electrode 12, the resistor 14, and the second extraction electrode are formed. The electrode 13, the electrostatic protection element 17, and the third extraction electrode 18 are provided by being laminated in this order. A pair of external electrodes 15 and 16 are formed at both ends of the substrate 11 and are electrically connected to the first and second extraction electrodes 12 and 13, respectively. The electrostatic protection element 17 is an electrostatic protection element made of a varistor mainly composed of SiC formed on the resistor 14. When an overvoltage is applied by, for example, an electrostatic pulse or a surge voltage, the impedance is lowered. . The electrostatic protection element 17 is electrically connected to the second extraction electrode 13 and is electrically connected to the first extraction electrode 12 via the third extraction electrode 18.

  According to the configuration of the second embodiment of the present invention described above, the electrostatic protection element 17 made of a varistor mainly composed of SiC is laminated on the resistor 14, and the electrostatic protection element 17 is the second protection element. Are electrically connected to the first extraction electrode 12 via the third extraction electrode 18, so that the resistor 14 and the electrostatic protection element 17 are connected in parallel. As a result, since static electricity can be bypassed by the electrostatic protection element 17, the electrostatic pulse resistance of the chip resistor with the electrostatic protection function can be increased.

  In addition, since the electrostatic protection element 17 and the resistor 14 are stacked, the substrate area is reduced as compared with the case where the electrostatic protection element 17 and the resistor 14 are formed side by side on one surface of the substrate 11. As a result, the chip resistor can be miniaturized. As a result, the mounting area of the chip resistor with the electrostatic protection function can be reduced, and the number of components is not increased unlike the case where the electrostatic protection element 17 is provided separately from the chip resistor. As a result, the cost can be reduced and the device using the chip resistor with the electrostatic protection function can be downsized.

(Embodiment 3)
Hereinafter, a chip resistor with an electrostatic protection function which is an example of a chip component with an electrostatic protection function in Embodiment 3 of the present invention will be described. 6 is a perspective view of the chip resistor with electrostatic protection function according to the third embodiment of the present invention as seen from the top surface side, and FIG. 7 is a perspective view of the chip resistor with electrostatic protection function shown in FIG. FIG. 8 is a cross-sectional view of the chip resistor with an electrostatic protection function shown in FIG.

  6, 7, and 8, the substrate 21 is a substrate configured using alumina, for example. Formed on one surface of the substrate 21 are first and second extraction electrodes 22 and 23 and a resistor 24 electrically connected to the first and second extraction electrodes 22 and 23. . The pair of external electrodes 25 and 26 are formed at both ends of the substrate 21 and are electrically connected to the first and second extraction electrodes 22 and 23, respectively. The protective element 27 is a protective element made of a varistor mainly composed of SiC formed on the other surface of the substrate 21 so as to face the resistor 24 with the substrate 11 interposed therebetween. When an overvoltage is applied, the impedance decreases. The protective element 27 is electrically connected to the external electrode 25 via the third extraction electrode 28. Further, the third extraction electrode 28 is connected to the fourth extraction electrode 29 via the protective element 27, and the fourth extraction electrode 29 includes side electrodes 30a, 30a formed on both sides of the side of the substrate 21, respectively. 30b is electrically connected.

  According to the configuration of the third embodiment of the present invention described above, both ends of the resistor 24 are connected to the external electrodes 25 and 26, respectively, and both ends of the protection element 27 are connected to the external electrode 25 and the side electrodes 30a and 30b, respectively. Therefore, when the chip resistor with electrostatic protection function shown in FIG. 6 is attached to a circuit board, for example, a printed wiring board, the external electrode 26 and at least one of the side electrodes 30a and 30b are connected. For example, since the resistor 24 and the protection element 27 can be connected in parallel, static electricity applied to the resistor 24 can be bypassed by the protection element 27 and the electrostatic pulse resistance of the resistor 24 can be increased. it can. Further, when the chip resistor with electrostatic protection function shown in FIG. 6 is attached to a circuit board, for example, a printed wiring board, if at least one of the side electrodes 30a and 30b is connected to the ground, it is applied to the resistor 24. The static electricity can be bypassed to the ground by the protective element 27, and the electrostatic pulse resistance of the resistor 24 can be increased.

  Further, the protective element 27 is formed on the other surface of the substrate 21 having the resistor 24 formed on one surface thereof so as to be substantially opposed to the resistor 24 with the substrate 21 interposed therebetween. As compared with the case where the protective element 27 and the resistor 24 are formed side by side on one side, the substrate area can be reduced. As a result, the size of the chip resistor can be reduced. As a result, the mounting area of the chip resistor with the electrostatic protection function can be reduced, and the number of components does not increase unlike the case where the protection element 27 is provided separately from the chip resistor. Thus, the cost can be reduced and the apparatus using the chip resistor with the electrostatic protection function can be reduced in size.

(Embodiment 4)
Hereinafter, a chip resistor with an electrostatic protection function which is an example of a chip component with an electrostatic protection function in Embodiment 4 of the present invention will be described. 9 is a perspective view of a chip resistor with an electrostatic protection function according to a fourth embodiment of the present invention, FIG. 10 is a cross-sectional view of the chip resistor with an electrostatic protection function shown in FIG. 9, and FIG. 11 is an electrostatic diagram shown in FIG. FIG. 12 is an enlarged schematic diagram between the take-out electrodes of the chip resistor with protection function, and FIG. 12 is an equivalent circuit diagram of the chip resistor with electrostatic protection function shown in FIG.

  9, 10, 11, and 12, the substrate 31 is a substrate configured using alumina, for example. First and second extraction electrodes 32 and 33 are formed on one surface of the substrate 31, and the resistor 34a and SiC are the main components between the first and second extraction electrodes 32 and 33. A mixture 34 including a protection element 34b made of a varistor is electrically connected. The external electrodes 35 and 36 are formed at both ends of the substrate 31. The mixture 34 is connected to the external electrode 35 via the first extraction electrode 32 and is connected to the external electrode 36 via the second extraction electrode 33.

  By adopting the structure as described above, the chip resistor with electrostatic protection function according to Embodiment 4 of the present invention has the first extraction electrode 32 and the second extraction as shown in the enlarged schematic view of FIG. Between the electrode 33, a structure is formed in which a mixture 34 in which resistor particles 34c and protective element particles 34d made of varistor particles mainly composed of SiC are mixed is formed. An equivalent circuit of the mixture 34 sandwiched between the first extraction electrode 32 and the second extraction electrode 33 can be represented by a circuit diagram shown in FIG.

  Next, a manufacturing method and electrical characteristics of the chip resistor with electrostatic protection function according to Embodiment 4 of the present invention will be described.

First, a protective element powder composed of a resistor powder mainly composed of RuO ₂ and a varistor powder composed mainly of SiC is blended at an appropriate blending ratio, and mixed powder containing an appropriate amount of glass frit is mixed with ethyl cellulose or the like. A solvent component such as a resin component and butyl carbitol is added and kneaded using a three roll or the like to prepare a mixed paste of a resistor and a protective element. Furthermore, by adding a resin component such as ethyl cellulose and a solvent component such as butyl carbitol to a mixed powder containing silver as a main component and an appropriate amount of glass frit, the mixture is kneaded using a three-roll roll or the like. Make a paste.

  Next, a silver paste is screen-printed on one surface of the substrate 31 made of alumina, dried at 50 to 150 ° C. for 0.5 to 3 minutes, and then heat-treated at 500 to 900 ° C. for 15 to 180 minutes. One extraction electrode 32 is formed.

  Next, a mixed paste of a resistor and a protective element is screen-printed so as to cover a part of the first extraction electrode 32 and dried at 50 to 150 ° C. for 0.5 to 3 minutes. The silver paste constituting the second extraction electrode 33 is screen-printed, dried at 50 to 150 ° C. for 0.5 to 3 minutes, and further heat-treated at 500 to 900 ° C. for 15 to 180 minutes. Two extraction electrodes 33 are formed. In this case, the thickness of the mixture 34 is desirably formed between 20 and 200 μm in order to secure a desired resistance value and to exhibit a sufficient electrostatic absorption effect.

  Then, a paste made of silver, glass frit, organic vehicle or the like is applied to one end of the substrate 31 so as to be electrically joined to one end of the first extraction electrode 32, and one end of the second extraction electrode 33 is applied. A paste made of silver, glass frit, organic vehicle or the like is applied to the other end of the substrate 31 so as to be electrically joined to the part. Thereafter, a pair of external electrodes 35 and 36 were formed by heat treatment at 500 to 900 ° C. for 15 to 180 minutes, and a chip resistor with an electrostatic protection function in Embodiment 4 of the present invention was fabricated.

  Table 2 shows the electrostatic test results of the conventional chip resistor and the chip resistor with electrostatic protection function according to the fourth embodiment of the present invention.

（表２）から明らかなように、従来例では、静電気の印加電圧を２ｋＶから１５ｋＶまで増大させるに従って、チップ形抵抗器の抵抗値の変化が増大しているが、本発明の実施の形態４においては静電気を１５ｋＶまで印加しても静電気保護機能付きチップ形抵抗器の抵抗値の変化は見られなかった。これは従来のチップ形抵抗器に静電気が印加された場合には、静電気は回路上、抵抗体を通らなければならないため、静電気に弱い従来のチップ形抵抗器は劣化するが、本発明の実施の形態４においては静電気保護機能付きチップ形抵抗器に静電気が印加されたとしても、静電気は抵抗体粒子３４ｃと保護素子粒子３４ｄとが混在する混合体３４における保護素子粒子３４ｄ側をバイパスして、抵抗体粒子３４ｃには印加されないからである。これは、ＳｉＣを主成分とするバリスタからなる保護素子３４ｂのインピーダンスは通常時には高いため、見かけ上オープンに見えるが、静電気により数ｋＶ以上といった高電圧が印加された場合には、ＳｉＣを主成分とするバリスタからなる保護素子３４ｂはインピーダンスが急激に低下し、静電気を優先的にバイパスさせることになり、そして、静電気が通ったあとは再びインピーダンスが復帰、増大することによる。

As apparent from Table 2, in the conventional example, the change in the resistance value of the chip resistor increases as the applied voltage of static electricity is increased from 2 kV to 15 kV. No change was observed in the resistance of the chip resistor with electrostatic protection function even when static electricity was applied up to 15 kV. This is because, when static electricity is applied to a conventional chip resistor, the static electricity must pass through a resistor on the circuit, so that the conventional chip resistor that is sensitive to static electricity deteriorates. In form 4, even if static electricity is applied to the chip resistor with electrostatic protection function, the static electricity bypasses the protective element particle 34d side in the mixture 34 in which the resistor particles 34c and the protective element particles 34d are mixed. This is because it is not applied to the resistor particles 34c. This is because the impedance of the protective element 34b made of a varistor mainly composed of SiC is normally high, and thus appears to be open. However, when a high voltage of several kV or more is applied due to static electricity, the main component is SiC. This is because the impedance of the protective element 34b made of a varistor decreases rapidly, and static electricity is preferentially bypassed, and after the static electricity passes, the impedance is restored and increased again.

  According to the configuration of the fourth embodiment of the present invention described above, the resistor 34a is electrically connected between the first and second extraction electrodes 32 and 33 formed on one surface of the substrate 31. 9 and the protection element 34b, the static electricity can be bypassed by the protection element 34b in the mixture 34. Therefore, the chip with the electrostatic protection function shown in FIG. The electrostatic pulse resistance of the resistor can be increased. Further, since the protective element 34b is included in the mixture 34 together with the resistor 34a, the number of components does not increase unlike the case where the protective element 34b is provided separately from the chip-type resistor. As a result, the cost can be reduced and the device using the chip resistor with the electrostatic protection function can be downsized.

  Further, according to the configuration of the fourth embodiment of the present invention, the mixed body 34 including the resistor 34a and the protective element 34b is mixed with the mixed paste including the protective element powder made of the resistor powder and the varistor powder, and the glass frit. Therefore, the protective element 34b and the resistor 34a are formed only by printing and baking a mixed paste containing the resistor powder, the protective element powder made of the varistor powder, and the glass frit. be able to. As a result, the printing process of the varistor powder and the printing process of the resistor powder in the case where the protective element and the resistor are individually formed can be replaced with the printing process of the mixed paste, so that the printing process is reduced and the production is performed. Cost can be reduced. Furthermore, since the protective element 34b made of a varistor mainly composed of SiC can be formed in the same portion as the resistor 34a, the size of the component can be reduced.

(Embodiment 5)
Hereinafter, a chip resistor with an electrostatic protection function which is an example of a chip component with an electrostatic protection function in the fifth embodiment will be described. 13 is a perspective view of a chip resistor with an electrostatic protection function according to a fifth embodiment of the present invention, FIG. 14 is a sectional view taken along line 14-14 in FIG. 13, and FIG. 15 is with an electrostatic protection function shown in FIG. It is an equivalent circuit diagram of a chip-type resistor.

  13, 14, and 15, the substrate 41 is a substrate configured using alumina, for example. On one surface of the substrate 41, first and second resistor take-out electrodes 42 and 43, and a resistor 44 electrically connected between the first and second resistor take-out electrodes 42 and 43, Is formed. A pair of external electrodes 45 and 46 are formed at both ends of the substrate 41. The external electrode 45 is connected to the external electrode 46 via the first resistor extraction electrode 42, the resistor 44, and the second resistor extraction electrode 43.

  Further, on one surface of the substrate 41, a first protection element extraction electrode 48, a protection element 47 made of a varistor mainly composed of SiC, and a second protection element extraction electrode 49 are formed. Side electrodes 50 are formed on both sides of the side portion. The external electrode 45 is electrically connected to the side electrode 50 via the first protection element extraction electrode 48, the protection element 47, and the second protection element extraction electrode 49.

  The circuit diagram of the chip resistor with electrostatic protection function in the fifth embodiment of the present invention described above is shown by an equivalent circuit diagram shown in FIG. In the chip resistor with electrostatic protection function according to the fifth embodiment, one end of the resistor 44 and one end of the protection element 47 are external electrodes by the first resistor extraction electrode 42 and the first protection element extraction electrode 48. The second resistor extraction electrode 43 connected to the other end of the resistor 44 and the second protection element extraction electrode 49 connected to the other end of the protection element 47 are not connected to each other. The external electrode 46 and the side electrode 50 are connected to each other.

  Accordingly, the chip resistor with electrostatic protection function according to the fifth embodiment of the present invention has a three-terminal structure having the external electrodes 45 and 46 and the side electrode 50, and therefore the protection element 47 is the second protection element take-out. The side electrode 50 connected via the electrode 49 can be used to connect to ground and bypass static electricity to ground.

  According to the configuration of the fifth embodiment of the present invention described above, both ends of the resistor 44 are connected to the external electrodes 45 and 46, respectively, and both ends of the protection element 47 are connected to the external electrode 45 and the side electrode 50, respectively. Therefore, when the chip resistor with electrostatic protection function shown in FIG. 13 is attached to a circuit board, for example, a printed wiring board, if the external electrode 46 and the side electrode 50 are connected, the resistor 44 and the protective element As a result, the static electricity applied to the resistor 44 can be bypassed by the protection element 47, and the electrostatic pulse resistance of the chip resistor with the electrostatic protection function can be increased.

  13 is attached to a circuit board, for example, a printed wiring board, if the side electrode 50 is connected to the ground, the static electricity applied to the resistor 44 is protected by the protective element 47. Can be bypassed to the ground, and the electrostatic pulse resistance of the chip-type resistor with an electrostatic protection function can be increased.

  In addition, since the resistor 44 and the protective element 47 are formed on the same substrate 41, the number of components does not increase unlike the case where the protective element 47 is provided separately from the chip resistor. As a result, the cost can be reduced and the device can be downsized.

(Embodiment 6)
Hereinafter, a chip resistor with an electrostatic protection function which is an example of a chip component with an electrostatic protection function in Embodiment 6 of the present invention will be described. 16 is a perspective view of a chip resistor with an electrostatic protection function according to a sixth embodiment of the present invention, FIG. 17 is a sectional view taken along line 17-17 in FIG. 16, and FIG. 18 is a chip resistor with an electrostatic protection function shown in FIG. FIG.

  16, 17, and 18, a substrate 51 is a substrate configured using alumina, for example. On one surface of the substrate 51, the first and second resistor take-out electrodes 52 and 53, the resistor 54, the first and third protection element take-out electrodes 58 and 59, and the second protection element take-out are provided. An electrode 60 and a protective element 57 made of a varistor mainly composed of SiC are formed. A pair of external electrodes 55 and 56 are formed at both ends of the substrate 51. The side electrodes 61 are formed on the side portions on both sides of the substrate 51.

  The external electrode 55 is electrically connected to the external electrode 56 through the first resistor extraction electrode 52, the resistor 54, and the second resistor extraction electrode 53. Further, the external electrode 55 is electrically connected to the external electrode 56 via the first protective element take-out electrode 58, the protective element 57, and the third protective element take-out electrode 59, and the first protective element take-out electrode The electrode 58, the protection element 57, and the second protection element extraction electrode 60 are electrically connected to the side electrode 61.

  According to this configuration, as shown in FIG. 18, the resistor 54 and the protection element 57 are connected in parallel, and both ends of the resistor 54 are connected to the external electrode 61 via the protection element 57. When viewed from the external electrode 61, this configuration is equivalent to a π-type filter in which two protection elements 57 are respectively connected to both ends of the resistor 54.

  According to the configuration of the sixth embodiment of the present invention described above, since the resistor 54 and the protective element 57 are connected in parallel, the static electricity applied to the resistor 54 can be bypassed by the protective element 57, and the static electricity The electrostatic pulse resistance of the chip resistor with a protective function can be increased.

  Further, when the chip-type resistor with the electrostatic protection function shown in FIG. 13 is attached to a circuit board, for example, a printed wiring board, if the side electrode 61 is connected to the ground, the static electricity applied to the resistor 54 is protected by the protective element 57. Can be bypassed to the ground, and the electrostatic pulse resistance of the chip-type resistor with an electrostatic protection function can be increased.

  In addition, since the resistor 54 and the protection element 57 are formed on the same substrate 51, the number of parts does not increase unlike the case where the protection element 57 is provided separately from the chip resistor. As a result, the cost can be reduced and the apparatus using the chip resistor with the electrostatic protection function can be downsized.

  Further, in the sixth embodiment of the present invention, as shown in the equivalent circuit diagram of FIG. 18, a π-type configuration in which protective elements 57 serving as bypass paths to the ground are connected before and after the resistor 54, respectively. Since the static electricity can be bypassed regardless of the direction in which the static electricity enters, there is an effect that it is not necessary to consider the directivity when the chip resistor with the electrostatic protection function is mounted on the circuit board.

  In the first to sixth embodiments of the present invention, the electrostatic protection elements 7, 17, 27, 34b, 47, and 57 have been described using varistors mainly composed of SiC. However, the present invention is not limited to this. Other than this, for example, even when a varistor mainly composed of ZnO, a protective element made of metal powder and resin, or the like is used, the same effects as those of the first to sixth embodiments of the present invention are obtained. It is what you have.

  Further, in the first embodiment of the present invention, as shown in FIG. 2, a sandwich structure in which the electrostatic protection element 7 is sandwiched between the first electrostatic protection element extraction electrode 8 and the second electrostatic protection element extraction electrode 9 is employed. Although electrical connection is intended, the present invention is not limited to this connection structure. For example, as shown in FIG. 19, first and second electrostatic protection element extraction electrodes 8 and 9 are connected to the substrate 1. An electrical connection is made with a gap structure in which a gap is formed on one surface, and the electrostatic protection element 7 is formed on the first and second electrostatic protection element take-out electrodes 8 and 9 so as to fill the gap. You may make it show.

  In the third embodiment of the present invention, as shown in FIG. 8, electrical connection is achieved with a sandwich structure in which the resistor 24 is sandwiched between the first extraction electrode 22 and the second extraction electrode 23. However, the present invention is not limited to this connection structure. For example, as shown in FIG. 20, first and second extraction electrodes 22 and 23 are formed on one surface of the substrate 21 with a gap therebetween. In addition, electrical connection may be achieved with a gap structure in which a resistor 24 is formed on the first and second extraction electrodes 22 and 23 so as to fill the gap.

  Furthermore, in Embodiment 4 of the present invention, as shown in FIG. 10, a sandwich structure in which a mixture 34 including a resistor and a protective element is sandwiched between a first extraction electrode 32 and a second extraction electrode 33 is employed. Although electrical connection is intended, it is not limited to this connection structure. For example, as shown in FIG. 21, the first and second extraction electrodes 32 and 33 are provided on one surface of the substrate 31. An electrical connection is made with a gap structure in which a mixture 34 including a resistor and a protection element is formed on the first and second extraction electrodes 32 and 33 so as to fill the gap. You may make it plan.

  Furthermore, in the fifth embodiment of the present invention, as shown in FIGS. 13 and 14, a sandwich structure in which the protective element 47 is sandwiched between the first protective element extraction electrode 48 and the second protective element extraction electrode 49. However, the present invention is not limited to this connection structure. For example, as shown in FIGS. 22 and 23, the first and second protective element take-out electrodes 48 and 49 are formed on the substrate. The gap 41 is formed with a gap on one surface, and the protective element 47 is formed on the first and second protective element take-out electrodes 48 and 49 so as to fill the gap. You may make it show.

  In the sixth embodiment of the present invention, as shown in FIGS. 16 and 17, the protective element 57 includes the first and third protective element extraction electrodes 58 and 59 and the second protective element extraction electrode 60. Although the electrical connection is achieved by a sandwich structure sandwiched between, the present invention is not limited to this connection structure. For example, as shown in FIGS. 24 and 25, the first, second, and third protections are provided. The element take-out electrodes 58, 60, 59 are formed with a gap on one surface of the substrate 51, and the first, second, and third protective element take-out electrodes 58, 60, 59 are formed so as to fill the gap. Alternatively, electrical connection may be achieved with a gap structure in which the protective element 57 is formed.

(Embodiment 7)
Hereinafter, a chip part with an electrostatic protection function in Embodiment 7 of the present invention will be described. 26 is a perspective view of the chip component with electrostatic protection function according to the seventh embodiment of the present invention, FIG. 27 is a sectional view taken along line 27-27 in FIG. 26, and FIG. 28 is an equivalent circuit of the chip component with electrostatic protection function shown in FIG. FIG.

  In FIGS. 26 and 27, a substrate 101 is a substrate configured using alumina, for example. On one surface of the substrate 101, first and second capacitor element extraction electrodes 102 and 103 are provided. A capacitive element 104 (capacitor) is formed so as to be electrically connected between the first capacitive element extraction electrode 102 and the second capacitive element extraction electrode 103. A pair of external electrodes 105 and 106 are formed on both ends of the substrate 101. One end of the first capacitor element extraction electrode 102 is connected to the external electrode 105, and one end of the second capacitor element extraction electrode 103 is connected to the external electrode 106. The electrostatic protection element 107 is a protection element made of a varistor mainly composed of SiC formed in parallel with the capacitor element 104 on one surface of the substrate 101. For example, when an overvoltage is applied by an electrostatic pulse or a surge voltage, the impedance is Decreases. The electrostatic protection element 107 is electrically connected to a pair of external electrodes 105 and 106 via first and second electrostatic protection element extraction electrodes 108 and 109.

  With the above structure, the capacitor 104 and the electrostatic protection element 107 can be formed in parallel on one surface of the same substrate 101, so that an equivalent circuit as shown in FIG. 28 can be formed.

  Next, a manufacturing method and electrical characteristics of the chip component with electrostatic protection function according to the seventh embodiment of the present invention will be described.

First, to a mixed powder containing PbTiO ₃ as a main component and an appropriate amount of glass frit added, a resin component such as ethyl cellulose and a solvent component such as butyl carbitol are added and kneaded using a three-roll roller or the like. An element paste is prepared. In the same manner, by adding a resin component such as ethyl cellulose and a solvent component such as butyl carbitol to a mixed powder containing SiC as a main component and adding an appropriate amount of glass frit, and kneading using a three roll or the like. An electrostatic protection element paste made of varistor paste is prepared. Furthermore, a silver paste is obtained by adding a resin component such as ethyl cellulose and a solvent component such as butyl carbitol to a mixed powder containing silver as a main component and an appropriate amount of glass frit, and kneading using a three-roll roll or the like. Is made.

  Next, a silver paste is screen-printed on one surface of the substrate 101 made of alumina, dried at 50 to 150 ° C. for 0.5 to 3 minutes, and then heat-treated at 500 to 900 ° C. for 15 to 180 minutes, whereby the first The capacitor element extraction electrode 102 and the first electrostatic protection element extraction electrode 108 are respectively formed.

  Next, the capacitive element paste is screen-printed so as to cover a part of the first capacitive element extraction electrode 102 and dried at 50 to 150 ° C. for 0.5 to 3 minutes. Then, an electrostatic protection element paste is screen-printed so as to cover a part of the first electrostatic protection element take-out electrode 108 and dried at 50 to 150 ° C. for 0.5 to 3 minutes. Further, silver paste constituting each of the second capacitive element extraction electrode 103 and the second electrostatic protection element extraction electrode 109 is screen-printed on the dried capacitive element paste and the electrostatic protection element paste, and 50 to 150 ° C. For 0.5 to 3 minutes. Then, the capacitor element 104, the electrostatic protection element 107, the second capacitor element extraction electrode 103, and the second electrostatic protection element extraction electrode 109 are formed by heat treatment at 500 to 900 ° C. for 15 to 180 minutes. In this case, since the impedance of the electrostatic protection element 107 depends on the thickness, the thickness of the electrostatic protection element 107 is desirably 200 μm or less in order to exhibit a sufficient electrostatic absorption effect.

  Next, one end of the substrate 101 is made of silver, glass frit, organic vehicle, or the like so as to be electrically bonded to one end of the first capacitor element extraction electrode 102 and the first electrostatic protection element extraction electrode 108. Is coated with silver, glass frit on the other end of the substrate 1 so as to be electrically bonded to one end of the second capacitive element extraction electrode 103 and the second electrostatic protection element extraction electrode 109. Apply paste made of organic vehicle. Thereafter, heat treatment was performed at 500 to 900 ° C. for 15 to 180 minutes, followed by baking to form a pair of external electrodes 105 and 106, and thus a chip component with an electrostatic protection function in Embodiment 7 of the present invention was produced.

  Table 3 shows the electrostatic test results for the conventional capacitive element and the chip component with electrostatic protection function according to the seventh embodiment of the present invention.

静電気試験条件は国際規格ＩＥＣ６１０００−４−２（人体モデル）に準拠して行った。（表３）から明らかなように、従来例では静電気を２ｋＶ印加した後、及び４ｋＶ印加した後においては、静電容量が初期値に比べて低下し、さらに静電気を８ｋＶ印加した後、及び１５ｋＶ印加した後においては、静電容量が初期値に比べて大きく低下するという静電容量値の変化が見られたが、本発明の実施の形態７においては静電気を２ｋＶ印加した後、４ｋＶ印加した後、８ｋＶ印加した後、及び１５ｋＶ印加した後においても、初期値に比べて静電容量値の変化は見られなかった。

The electrostatic test conditions were performed in accordance with the international standard IEC61000-4-2 (human body model). As is clear from Table 3, in the conventional example, after applying 2 kV of static electricity and after applying 4 kV, the capacitance decreases compared to the initial value, and further, after applying 8 kV of static electricity, and 15 kV After application, a change in capacitance value was observed in which the capacitance decreased significantly compared to the initial value. In Embodiment 7 of the present invention, 4 kV was applied after 2 kV was applied. Later, even after applying 8 kV and after applying 15 kV, no change in capacitance value was observed compared to the initial value.

  This is because, when static electricity is applied to a conventional capacitive element, the capacitive element is an insulator, so that the static electricity passes through the discharge electrode between the shortest distances. The element has a reduced capacitance. On the other hand, in the chip part with the electrostatic protection function according to the seventh embodiment of the present invention, even if static electricity is applied, the static electricity bypasses the electrostatic protection element 107 side. Thereby, since static electricity is not applied to the capacitive element 104, the electrostatic capacitance value of the capacitive element 104 does not change. This is because the electrostatic protection element 107 is normally open because it has a high impedance. However, when a high voltage of several kV or more is applied due to static electricity, the electrostatic protection element 107 suddenly decreases its impedance, Bypass with priority. Then, after the static electricity passes, the impedance is restored and increased again, so that the electrostatic capacity of the chip component with the electrostatic protection function is suppressed from being reduced by the static electricity.

  In this manner, by forming the electrostatic protection element 107 and the capacitor element 104 in parallel, static electricity can be bypassed. In order to increase the static electricity bypass effect of the electrostatic protection element 107, it is better to lower the impedance of the electrostatic protection element 107. For this purpose, the thickness of the electrostatic protection element 107 is preferably 200 μm or less.

(Embodiment 8)
Hereinafter, a chip part with an electrostatic protection function according to an eighth embodiment of the present invention will be described. FIG. 29 is a perspective view of a chip part with an electrostatic protection function according to an eighth embodiment of the present invention, and FIG. 30 is a cross-sectional view of the chip part with an electrostatic protection function shown in FIG.

  29 and 30, a substrate 111 is a substrate configured using alumina, for example. First and second extraction electrodes 112 and 113 are provided on one surface of the substrate 111. Further, the capacitor element 114 is formed by being electrically connected between the first extraction electrode 112 and the second extraction electrode 113, and the first extraction electrode 112, the capacitance element 114, and the second extraction electrode are formed. The electrode 113, the electrostatic protection element 117, and the third extraction electrode 118 are provided by being stacked in this order. A pair of external electrodes 115 and 116 are formed at both ends of the substrate 111 and are electrically connected to the first and second extraction electrodes 12 and 13, respectively. The electrostatic protection element 117 is an electrostatic protection element made of a varistor mainly composed of SiC formed on the capacitor element 114. When an overvoltage is applied by, for example, an electrostatic pulse or a surge voltage, the impedance is lowered. . The electrostatic protection element 117 is electrically connected to the second extraction electrode 113 and electrically connected to the first extraction electrode 112 via the third extraction electrode 118.

  According to the configuration of the eighth embodiment of the present invention described above, the electrostatic protection element 117 made of a varistor mainly composed of SiC is laminated on the capacitor element 114, and the electrostatic protection element 117 is the second element. The capacitor element 114 and the electrostatic protection element 117 are connected in parallel because the capacitor element 114 and the electrostatic protection element 117 are electrically connected to the first extraction electrode 113 and the first extraction electrode 112 via the third extraction electrode 118. As a result of the connection, the static electricity applied to the capacitor element 114 can be bypassed by the electrostatic protection element 117, so that the electrostatic pulse resistance of the chip component with the electrostatic protection function can be increased.

  Further, since the electrostatic protection element 117 is formed by being laminated on the capacitor element 114, the area of the substrate is smaller than when the electrostatic protection element 117 and the capacitor element 114 are formed side by side on one surface of the substrate 111. As a result of being able to reduce, the size of the chip component with the electrostatic protection function can be reduced. As a result, the mounting area of the chip component with the electrostatic protection function can be reduced, and the number of components does not increase unlike the case where the electrostatic protection element 117 is provided separately from the chip component with the electrostatic protection function. In addition, the device using the chip component with the electrostatic protection function can be reduced in size.

(Embodiment 9)
Hereinafter, a chip part with an electrostatic protection function according to a ninth embodiment of the present invention will be described. 31 is a perspective view as seen from the upper surface side of the chip component with electrostatic protection function according to the ninth embodiment of the present invention, FIG. 32 is a perspective view as seen from the rear surface side of the chip component with electrostatic protection function, and FIG. It is sectional drawing of the chip component with an electrostatic protection function shown in FIG.

  31, FIG. 32, and FIG. 33, a substrate 121 is a substrate that is made of alumina, for example. Formed on one surface of the substrate 121 are first and second extraction electrodes 122 and 123 and a capacitive element 124 electrically connected between the first and second extraction electrodes 122 and 123. ing. The external electrodes 125 and 126 are a pair of electrodes that are formed at both ends of the substrate 121 and are electrically connected to the first and second extraction electrodes 122 and 123. The electrostatic protection element 127 is a protection element made of a varistor mainly composed of SiC formed on the other surface of the substrate 121 so as to be substantially opposed to the capacitive element 124 with the substrate 121 interposed therebetween. When an overvoltage is applied due to the above, the impedance is lowered. The electrostatic protection element 127 is electrically connected to the external electrode 125 through the third extraction electrode 128. The third extraction electrode 128 is connected to the fourth extraction electrode 129 via the electrostatic protection element 127, and the fourth extraction electrode 129 is a side electrode formed on each side of the substrate 121. 130a and 130b are electrically connected.

  According to the configuration of the ninth embodiment of the present invention described above, both ends of the capacitive element 124 are connected to the external electrodes 125 and 126, respectively, and both ends of the electrostatic protection element 127 are connected to the external electrode 125 and the side electrodes 130a and 130b. Since they are connected to each other, when the chip component with an electrostatic protection function shown in FIG. 31 is attached to a circuit board, for example, a printed wiring board, the external electrode 126 and at least one of the side electrodes 130a and 130b are connected. As a result of the capacitance element 124 and the electrostatic protection element 127 being connected in parallel, the static electricity applied to the capacitance element 124 can be bypassed by the electrostatic protection element 127, and the electrostatic pulse withstand capability of the chip component with the electrostatic protection function can be increased. Can be increased.

  Further, when the chip component with the electrostatic protection function shown in FIG. 31 is attached to a circuit board, for example, a printed wiring board, if at least one of the side electrodes 130a and 130b is connected to the ground, the static electricity applied to the capacitive element 124 Can be bypassed to the ground by the electrostatic protection element 127, so that the electrostatic pulse tolerance of the chip component with the electrostatic protection function can be increased.

  Further, the electrostatic protection element 127 is formed on the other surface of the substrate 121 having the capacitor element 124 formed on one surface thereof so as to substantially face the capacitor element 124 with the substrate 121 interposed therebetween. As a result, the substrate area can be reduced as compared with the case where the electrostatic protection element 127 and the capacitor element 124 are formed side by side on one surface of the substrate, and as a result, the size of the chip component with the electrostatic protection function can be reduced. As a result, the mounting area of the chip component with the electrostatic protection function can be reduced, and the number of components is not increased unlike the case where the electrostatic protection element 127 is provided separately from the chip-type capacitive element. In addition, it is possible to reduce the size of a device using the chip component with the electrostatic protection function.

(Embodiment 10)
Hereinafter, a chip part with an electrostatic protection function in Embodiment 10 of the present invention will be described. 34 is a perspective view of a chip component with an electrostatic protection function according to Embodiment 10 of the present invention, FIG. 35 is a sectional view of the chip component with an electrostatic protection function shown in FIG. 34, and FIG. 36 is a chip with an electrostatic protection function shown in FIG. FIG. 37 is an equivalent circuit diagram of the chip component with an electrostatic protection function shown in FIG. 34. FIG.

  In FIGS. 34, 35, 36, and 37, a substrate 131 is a substrate that is made of alumina, for example. First and second extraction electrodes 132 and 133 are formed on one surface of the substrate 131. Between the first and second extraction electrodes 132 and 133, the capacitor element 134a and SiC are the main components. A mixture 134 including an electrostatic protection element 134b made of a varistor is electrically connected. The pair of external electrodes 135 and 136 are formed at both ends of the substrate 131. The mixture 134 is connected to the external electrode 135 via the first extraction electrode 132 and is connected to the external electrode 136 via the second extraction electrode 133.

  With the structure as described above, the chip component with an electrostatic protection function according to the tenth embodiment of the present invention has the first extraction electrode 132 and the second extraction electrode 133 as shown in the enlarged schematic view of FIG. Between the capacitor element particles 134c and the protective element particles 134d, a mixture 134 is formed. An equivalent circuit diagram in this case can be represented by a circuit diagram shown in FIG.

  Next, a manufacturing method and electrical characteristics of the chip component with electrostatic protection function according to the tenth embodiment of the present invention will be described.

First, a capacitive element powder mainly composed of PbTiO ₃ and a protective element powder composed of a varistor powder mainly composed of SiC are blended at an appropriate blending ratio, and ethyl cellulose or the like is added to a mixed powder to which an appropriate amount of glass frit is added. The resin component and a solvent component such as butyl carbitol are added and kneaded using a three roll or the like to prepare a mixture paste of the capacitive element and the protective element. Furthermore, a silver paste is obtained by adding a resin component such as ethyl cellulose and a solvent component such as butyl carbitol to a mixed powder containing silver as a main component and an appropriate amount of glass frit, and kneading using a three-roll roll or the like. Is made.

  Next, a silver paste is screen-printed on one surface of the substrate 131 made of alumina, dried at 50 to 150 ° C. for 0.5 to 3 minutes, and then heat-treated at 500 to 900 ° C. for 15 to 180 minutes, whereby the first The extraction electrode 132 is formed.

  Next, a mixed paste of a capacitive element and a protective element is screen-printed so as to cover a part of the first extraction electrode 132 and dried at 50 to 150 ° C. for 0.5 to 3 minutes. Then, the silver paste constituting the second extraction electrode 133 is screen-printed on the mixture paste, dried at 50 to 150 ° C. for 0.5 to 3 minutes, and further heat-treated at 500 to 900 ° C. for 15 to 180 minutes. Thus, the mixture 134 and the second extraction electrode 133 are formed. In this case, the thickness of the mixture 134 is desirably formed between 20 and 200 μm in order to secure a desired capacitance value and to exhibit a sufficient electrostatic absorption effect.

  Next, a paste made of silver, glass frit, organic vehicle, or the like is applied to one end of the substrate 131 so as to be electrically bonded to one end of the first extraction electrode 132, and the second extraction electrode 133 A paste made of silver, glass frit, organic vehicle, or the like is applied to the other end of the substrate 131 so as to be electrically bonded to the one end. Thereafter, heat treatment was performed at 500 to 900 ° C. for 15 to 180 minutes and baking was performed to form a pair of external electrodes 135 and 136, thereby producing a chip component with an electrostatic protection function in Embodiment 10 of the present invention.

  Table 4 shows the electrostatic test results of the conventional capacitive element and the chip component with electrostatic protection function according to the tenth embodiment of the present invention.

（表４）から明らかなように、従来例では静電気を２ｋＶ印加した後、及び４ｋＶ印加した後においては、静電容量が初期値に比べて低下し、そして静電気を８ｋＶ印加した後、及び１５ｋＶ印加した後においては、静電容量が初期値に比べて大きく低下するという静電容量値の変化が見られたが、本発明の実施の形態１０においては静電気を２ｋＶ印加した後、４ｋＶ印加した後、８ｋＶ印加した後、及び１５ｋＶ印加した後においても、初期値に比べて静電容量値の変化は見られなかった。これは従来の容量素子に静電気が印加された場合には、容量素子が絶縁体であるため、静電気は最も距離の短い取出し電極間を放電する形で通ることになり、これにより、従来の容量素子は静電容量が低下するが、本発明の実施の形態１０においては静電気が印加されたとしても、静電気は容量素子粒子１３４ｃと保護素子粒子１３４ｄとが混在する混合体１３４における保護素子粒子１３４ｄ側をバイパスして、容量素子粒子１３４ｃには静電気が印加されないからである。これは、ＳｉＣを主成分とするバリスタからなる静電気保護素子１３４ｂのインピーダンスは通常時には高いため、見かけ上オープンに見えるが、静電気により数ｋＶ以上といった高電圧が印加された場合には、ＳｉＣを主成分とするバリスタからなる静電気保護素子１３４ｂはインピーダンスが急激に低下し、静電気を優先的にバイパスさせることになり、そして、静電気が通ったあとは再びインピーダンスが復帰、増大するからである。

As is clear from Table 4, in the conventional example, after applying 2 kV of static electricity and after applying 4 kV, the capacitance decreases compared to the initial value, and after applying 8 kV of static electricity, and 15 kV After application, a change in capacitance value was observed in which the capacitance decreased significantly compared to the initial value. In the tenth embodiment of the present invention, 4 kV was applied after 2 kV was applied. Later, even after applying 8 kV and after applying 15 kV, no change in capacitance value was observed compared to the initial value. This is because, when static electricity is applied to a conventional capacitive element, the capacitive element is an insulator, so that the static electricity passes in a form of discharging between the extraction electrodes with the shortest distance. Although the capacitance of the element decreases, in the tenth embodiment of the present invention, even if static electricity is applied, the static electricity is protected element particles 134d in the mixture 134 in which the capacitive element particles 134c and the protective element particles 134d are mixed. This is because static electricity is not applied to the capacitive element particles 134c, bypassing the side. This is because the impedance of the electrostatic protection element 134b made of a varistor mainly composed of SiC is normally high, and thus appears to be open, but when high voltage of several kV or more is applied due to static electricity, SiC is mainly used. This is because the electrostatic protection element 134b made of a varistor as a component has an impedance that suddenly decreases, preferentially bypasses static electricity, and the impedance is restored and increased again after the static electricity has passed.

  According to the above-described configuration of the tenth embodiment of the present invention, the capacitive element 134a and the static electricity are electrically connected to the first and second extraction electrodes 132 and 133 formed on one surface of the substrate 131. Since the mixture 134 including the protection element 134b is formed, static electricity can be bypassed by the electrostatic protection element 134b in the mixture 134, so that the electrostatic pulse resistance of the chip component with the electrostatic protection function is increased. be able to. Further, since the electrostatic protection element 134b is included in the mixture 134 including the capacitive element 134a, the number of parts increases as if the electrostatic protection element 134b was provided separately from the chip-type capacitive element. In this way, the cost can be reduced and the apparatus can be reduced in size.

  Further, according to the configuration of the tenth embodiment of the present invention, the mixture 134 including the capacitive element 134a and the electrostatic protection element 134b is mixed with the protective element powder composed of the capacitive element powder, the varistor powder, and the glass frit. Since the paste is integrally formed, the electrostatic protective element 134b and the capacitive element 134a are formed simply by printing and baking a mixed paste containing the protective element powder and the glass frit composed of the capacitive element powder and the varistor powder. can do. As a result, the printing process of the varistor powder and the printing process of the resistor powder in the case where the protective element and the resistor are individually formed can be replaced with the printing process of the mixed paste, so that the printing process is reduced and the production is performed. Cost can be reduced. Furthermore, since the electrostatic protection element 134b made of a varistor mainly composed of SiC can be formed in the same portion as the capacitor element 134a, the size of the component can be reduced.

(Embodiment 11)
Hereinafter, a chip part with an electrostatic protection function in an eleventh embodiment of the present invention will be described. 38 is a perspective view of the chip component with electrostatic protection function according to the eleventh embodiment of the present invention, FIG. 39 is a sectional view taken along line 39-39 in FIG. 38, and FIG. 40 is an equivalent circuit of the chip component with electrostatic protection function shown in FIG. FIG.

  In FIGS. 38, 39, and 40, the substrate 141 is a substrate made of alumina, for example. On one surface of the substrate 141, there are first and second capacitor element extraction electrodes 142 and 143, and a capacitor element 144 electrically connected between the first and second capacitor element extraction electrodes 142 and 143. Is formed. A pair of external electrodes 145 and 146 are formed on both ends of the substrate 141. The external electrode 145 is connected to the external electrode 146 via the first capacitor element extraction electrode 142, the capacitor element 144, and the second capacitor element extraction electrode 143.

  Also, on one surface of the substrate 141, a first electrostatic protection element extraction electrode 148, an electrostatic protection element 147 made of a varistor mainly composed of SiC, and a second electrostatic protection element extraction electrode 149 are formed. Side electrodes 150 are formed on the sides of the substrate 141. The external electrode 145 is electrically connected to the side electrode 150 via the first electrostatic protection element extraction electrode 148, the electrostatic protection element 147, and the second electrostatic protection element extraction electrode 149.

  The circuit diagram of the chip part with electrostatic protection function in the eleventh embodiment of the present invention is shown by an equivalent circuit diagram shown in FIG. In the chip part with an electrostatic protection function in the eleventh embodiment, one end of the resistor 144 and one end of the protection element 147 are connected to the external electrode 145 by the first resistor extraction electrode 142 and the first electrostatic protection element extraction electrode 148. The second resistor take-out electrode 143 connected to the other end of the resistor 144 and the second ESD protection element take-out electrode 149 connected to the other end of the electrostatic protection element 147 are connected to each other. Without being connected to the external electrode 146 and the side electrode 150, respectively.

  Therefore, the chip component with an electrostatic protection function according to the eleventh embodiment of the present invention has a three-terminal structure having the external electrodes 145 and 146 and the side electrodes 150, so that the electrostatic protection element 147 is taken out of the second electrostatic protection element. Static electricity can be bypassed to the ground by the electrostatic protection element 147 by connecting the side electrode 150 connected via the electrode 149 to the ground.

  According to the configuration of the eleventh embodiment of the present invention described above, both ends of the capacitive element 144 are connected to the external electrodes 145 and 146, respectively, and both ends of the electrostatic protection element 147 are connected to the external electrode 145 and the side electrode 150, respectively. Therefore, when the chip component with an electrostatic protection function shown in FIG. 38 is attached to a circuit board, for example, a printed wiring board, if the external electrode 146 and the side electrode 150 are connected, the capacitive element 144 and the electrostatic protection element As a result of being connected in parallel with 147, static electricity applied to the capacitor element 144 can be bypassed by the electrostatic protection element 147, and the electrostatic pulse tolerance of the chip component with the electrostatic protection function can be increased.

  Further, when the chip part with an electrostatic protection function shown in FIG. 38 is attached to a circuit board, for example, a printed wiring board, if the side electrode 150 is connected to the ground, the static electricity applied to the capacitor 144 is caused by the electrostatic protection element 147. It can be bypassed to the ground, and the electrostatic pulse tolerance of the chip component with the electrostatic protection function can be increased.

  In addition, since the capacitive element 144 and the electrostatic protection element 147 are formed on the same substrate 141, the number of components increases as if the electrostatic protection element 147 was provided separately from the chip-type capacitive element. As a result, the cost can be reduced and the device using the chip component with the electrostatic protection function can be downsized.

(Embodiment 12)
Hereinafter, a chip part with an electrostatic protection function in Embodiment 12 of the present invention will be described. 41 is a perspective view of the chip component with electrostatic protection function according to the twelfth embodiment of the present invention, FIG. 42 is a sectional view taken along line 42-42 in FIG. 41, and FIG. 43 is an equivalent circuit of the chip component with electrostatic protection function shown in FIG. FIG.

  In FIGS. 41, 42, and 43, a substrate 151 is a substrate made of, for example, alumina. On one surface of the substrate 151, the first and second capacitive element extraction electrodes 152 and 153, the capacitive element 154, the first and third electrostatic protection element extraction electrodes 158 and 159, and the second electrostatic protection An element extraction electrode 160 and an electrostatic protection element 157 made of a varistor mainly composed of SiC are formed. A pair of external electrodes 155 and 156 are formed on both ends of the substrate 151. Then, side electrodes 161 are formed on both sides of the substrate 151.

  The external electrode 155 is electrically connected to the external electrode 156 via the first capacitor element extraction electrode 152, the capacitor element 154, and the second capacitor element extraction electrode 153. Further, the external electrode 155 is electrically connected to the external electrode 156 via the first electrostatic protection element extraction electrode 158, the electrostatic protection element 157, and the third electrostatic protection element extraction electrode 159, and It is electrically connected to the side electrode 161 via the electrostatic protection element extraction electrode 158, the electrostatic protection element 157, and the second electrostatic protection element extraction electrode 160.

  According to this configuration, as shown in FIG. 43, the capacitive element 154 and the electrostatic protection element 157 are connected in parallel, and both ends of the capacitive element 154 are connected to the side electrode 161 via the electrostatic protection element 157, respectively. Is done. When viewed from the side electrode 161, this configuration is equivalent to a π-type filter in which two electrostatic protection elements 157 are connected to both ends of the capacitive element 154, respectively.

  According to the configuration of the twelfth embodiment of the present invention described above, since the capacitive element 154 and the electrostatic protection element 157 are connected in parallel, the static electricity applied to the capacitive element 154 can be bypassed by the electrostatic protection element 157. In addition, it is possible to increase the electrostatic pulse resistance of the chip component with the electrostatic protection function.

  In addition, when the chip part with the electrostatic protection function shown in FIG. 41 is attached to a circuit board, for example, a printed wiring board, if the side electrode 161 is connected to the ground, static electricity applied to the capacitor 154 is caused by the electrostatic protection element 157. It can be bypassed to the ground, and the electrostatic pulse tolerance of the chip component with the electrostatic protection function can be increased.

  Further, since the capacitive element 154 and the electrostatic protection element 157 are formed on the same substrate 151, the number of parts increases as if the electrostatic protection element 157 was provided separately from the chip-type capacitive element. As a result, the cost can be reduced and the device using the chip component with the electrostatic protection function can be downsized.

  In the twelfth embodiment of the present invention, as shown in the equivalent circuit diagram of FIG. 43, a π-type configuration in which electrostatic protection elements 157 serving as bypass paths to the ground are connected before and after the capacitive element 154, respectively. Thus, since the static electricity can be bypassed regardless of the direction in which the static electricity enters, there is an effect that there is no need to consider the directionality when the chip component with the electrostatic protection function is mounted on the circuit board.

(Embodiment 13)
Hereinafter, a chip part with an electrostatic protection function according to a thirteenth embodiment of the present invention will be described. FIG. 44 is a perspective view of a chip part with an electrostatic protection function in Embodiment 13 of the present invention, and FIG. 45 is an equivalent circuit diagram of the chip part with an electrostatic protection function shown in FIG.

  44 and 45, a substrate 171 is a substrate configured using alumina, for example. On the substrate 171, first and second resistor take-out electrodes 172 and 173, and a resistor 174 electrically connected to the first and second resistor take-out electrodes 172 and 173 are formed. . The external electrodes 175 and 176 are a pair of external electrodes formed at both ends of the substrate 171 and electrically connected to the first and second resistor take-out electrodes 172 and 173. The capacitive element 177 is a capacitive element formed in parallel with the resistor 174 on the substrate 171, and this capacitive element 177 is one of the pair of external electrodes 175 and 176 via the first capacitive element extraction electrode 178. The external electrode 175 is electrically connected. The electrostatic protection element 179 is an electrostatic protection element made of a varistor mainly composed of SiC formed in parallel with the capacitor element 177. The electrostatic protection element 179 is electrically connected to one external electrode 175 of the pair of external electrodes 175 and 176 via the first electrostatic protection element take-out electrode 180, and the second electrostatic protection element 179. The capacitor element 177 and the side electrode 182 formed on the side portion of the substrate 171 are electrically connected via the element extraction electrode 181.

  The above-described chip component with an electrostatic protection function in the thirteenth embodiment of the present invention is shown in an equivalent circuit diagram as shown in FIG. That is, one end of the capacitive element 177 and one end of the electrostatic protection element 179 are both connected to the external electrode 175, and the other end of the capacitive element 177 and the other end of the electrostatic protection element 179 are both connected to the side electrode 182. Therefore, the capacitive element 177 and the electrostatic protection element 179 are connected in parallel.

  In addition, one end of the parallel circuit of the capacitor element 177 and the electrostatic protection element 179 and one end of the resistor 174 are both connected by an external electrode 175. Therefore, the chip component with electrostatic protection function according to the thirteenth embodiment of the present invention has a three-terminal structure having the external electrodes 175 and 176 and the side electrodes 182. By using the side electrode 182 connected to the ground, the static electricity applied to the resistor 174 and the capacitor 177 is reduced by the electrostatic protection element 179 in the RC filter including the resistor 174 and the capacitor 177. Can be bypassed to ground. Thereby, the electrostatic pulse tolerance of the chip component with the electrostatic protection function constituting the RC filter can be improved.

  In addition, since the resistor 174, the capacitor 177, and the electrostatic protection element 179 are formed on the same substrate 171, the RC filter including the resistor 174 and the capacitor 177 and the RC filter are protected from static electricity. The electrostatic protection element 179 can be configured by one chip, and the number of parts does not increase unlike the case where the resistor 174, the capacitor element 177, and the electrostatic protection element 179 are separately provided, thereby reducing the cost. In addition, the device using the chip component with the electrostatic protection function can be reduced in size.

  Next, a manufacturing method and electrical characteristics of the chip component with electrostatic protection function according to the thirteenth embodiment of the present invention will be described.

First, a resistor paste is prepared by adding a resin component such as ethyl cellulose and a solvent component such as butyl carbitol to a mixed powder containing RuO ₂ as a main component and adding an appropriate amount of glass frit, and kneading using a three-roll roll or the like. Is made.

Next, a resin component such as ethyl cellulose and a solvent component such as butyl carbitol are added to a mixed powder containing PbTiO ₃ as a main component and an appropriate amount of glass frit added, and kneaded using a three-roll unit or the like. A capacitive element paste is prepared. In the same manner, by adding a resin component such as ethyl cellulose and a solvent component such as butyl carbitol to a mixed powder containing SiC as a main component and adding an appropriate amount of glass frit, and kneading using a three roll or the like. An electrostatic protection element paste made of varistor paste is prepared. Furthermore, a silver paste is obtained by adding a resin component such as ethyl cellulose and a solvent component such as butyl carbitol to a mixed powder containing silver as a main component and an appropriate amount of glass frit, and kneading using a three-roll roll or the like. Is made.

  Next, a silver paste is screen-printed on a substrate 171 made of alumina, dried at 50 to 150 ° C. for 0.5 to 3 minutes, and then heat-treated at 500 to 900 ° C. for 15 to 180 minutes, whereby the first A resistor extraction electrode 172, a first capacitor element extraction electrode 178, and a first electrostatic protection element extraction electrode 180 are formed.

  Next, a resistor paste is screen-printed so as to cover a part of the first resistor extraction electrode 172 and dried at 50 to 150 ° C. for 0.5 to 3 minutes, and one of the first capacitor element extraction electrodes 178 is formed. Capacitance element paste is screen-printed to cover the part and dried at 50 to 150 ° C. for 0.5 to 3 minutes. Further, an electrostatic protection element paste is screen-printed so as to cover a part of the first electrostatic protection element extraction electrode 180 and dried at 50 to 150 ° C. for 0.5 to 3 minutes. Then, a silver paste constituting the second resistor extraction electrode 173 is screen-printed on the resistor paste and dried at 50 to 150 ° C. for 0.5 to 3 minutes, and then the capacitor element paste and the electrostatic protection element paste are overlaid. A silver paste constituting the second electrostatic protection element extraction electrode 181 is screen-printed and dried at 50 to 150 ° C. for 0.5 to 3 minutes.

  Furthermore, the resistor 174, the capacitor 177, the electrostatic protection element 179, the second resistor extraction electrode 173, and the second electrostatic protection element extraction electrode 181 are formed by heat treatment at 500 to 900 ° C. for 15 to 180 minutes. To do. In this case, since the impedance of the electrostatic protection element 179 depends on the thickness, the thickness of the electrostatic protection element 179 is desirably 200 μm or less in order to exert a sufficient electrostatic absorption effect.

  Next, the substrate is electrically connected to one end of the first resistor extraction electrode 172, one end of the first capacitor element extraction electrode 178, and one end of the first electrostatic protection element extraction electrode 180. A paste made of silver, glass frit, an organic vehicle or the like constituting the external electrode 175 is applied to one end of the external electrode 175, and is electrically bonded to one end of the second resistor extraction electrode 173 so that the other of the substrate 171 A paste made of silver, glass frit, organic vehicle or the like constituting the external electrode 176 is applied to the end. Further, a paste made of silver, glass frit, organic vehicle or the like constituting the side electrode 182 is applied to the side portion of the substrate 171 so as to be electrically joined to one end of the second electrostatic protection element extraction electrode 181. To do. Then, a pair of external electrodes 175 and 176 and side electrodes 182 are formed by heat treatment and baking at 500 to 900 ° C. for 15 to 180 minutes, and the chip component with electrostatic protection function according to the thirteenth embodiment of the present invention is formed. Produced.

  Table 5 shows the electrostatic test results of the conventional RC filter and the chip component with electrostatic protection function according to the thirteenth embodiment of the present invention.

（表５）において、本発明の実施の形態１３における静電気保護機能付きチップ部品は図４５に示した回路図になるように作製し、図４６に示す回路Ａと、図４７に示す回路Ｂとなるように結線した場合のそれぞれの結果を示している。回路Ａは静電気の印加経路Ｘにおける抵抗体１７４の上流に静電気保護素子１７９が配置されるように結線しており、回路Ｂは静電気の印加経路における抵抗体１７４の下流に静電気保護素子１７９が配置されるように結線している。（表５）の従来例からも明らかなように、ＲＣフィルタの中では、抵抗器の方がキャパシタよりも静電気耐量は小さいため、抵抗器に対して特に静電気対策を実施する必要がある。

In (Table 5), the chip component with electrostatic protection function according to the thirteenth embodiment of the present invention is manufactured so as to be the circuit diagram shown in FIG. 45, and the circuit A shown in FIG. 46 and the circuit B shown in FIG. Each result is shown in the case of connection. The circuit A is connected so that the electrostatic protection element 179 is disposed upstream of the resistor 174 in the static electricity application path X, and the electrostatic protection element 179 is disposed downstream of the resistor 174 in the static electricity application path. It is connected as is done. As is clear from the conventional example of (Table 5), in the RC filter, since the resistance of the resistor is smaller than that of the capacitor, it is necessary to take a countermeasure against static electricity especially for the resistor.

  In Table 5, in the circuit A of the chip component with electrostatic protection function according to the thirteenth embodiment of the present invention, since the electrostatic protection element 179 serves as a bypass path for both the resistor 174 and the capacitor 177, the electrostatic application Later, both the resistance value (R value) of the resistor 174 and the capacitance value (C value) of the capacitor 177 do not change. On the other hand, in the circuit B, the electrostatic protection element 179 made of a varistor containing SiC as a main component works as a bypass path for the capacitor element 177, but does not work for the resistor 174. Therefore, it is desirable to connect the chip component with electrostatic protection function in the thirteenth embodiment of the present invention in the form of circuit A. However, even in the circuit B, regarding the circuits and devices further downstream than the chip component with the electrostatic protection function, since the electrostatic protection element 179 functions as a bypass path for static electricity, compared to a conventional RC filter that does not use the electrostatic protection element 179. High protective effect. Therefore, even in the configuration of the circuit B, it is possible to protect circuits and devices downstream of the electrostatic protection element 179 from static electricity.

  As described above, it is important to connect the static electricity application path so that the static electricity protection element 179 is disposed upstream of the resistor 174. In consideration of this, as shown in FIG. Even in the circuit, the same effect as in the thirteenth embodiment of the present invention can be obtained if the connection direction is not mistaken. Further, as shown in FIG. 49, if two electrostatic protection elements 179 made of varistors mainly composed of SiC are formed in a π shape with respect to the resistor 174, it is not necessary to consider the directionality during mounting, Regardless of the direction in which the abnormal voltage is applied, the resistor 174 can be protected.

  Although the RC filter has been described in the thirteenth embodiment of the present invention, noise can be reduced by forming the electrostatic protection element 179 on the same substrate for other filters such as an LC filter and an LR filter. It has the effect that countermeasures and countermeasures against static electricity can be performed simultaneously.

  Also in the RC filter as an example of the chip component with electrostatic protection function in the thirteenth embodiment of the present invention, a varistor mainly composed of SiC on the capacitive element 177 as in the eighth embodiment of the present invention. When the electrostatic protection element 179 made of is laminated and formed, the capacitive element 177 is formed on one surface of the substrate 171 and the substrate 171 is placed on one surface of the substrate 171 as in the ninth embodiment of the present invention. When the electrostatic protection element 179 is formed so as to be substantially opposed to the capacitive element 177, or as in the tenth embodiment of the present invention, the mixture including the capacitive element 134a and the electrostatic protection element 134b When the element 177 and the electrostatic protection element 179 are formed together, the same effects as those of the eighth, ninth and tenth embodiments of the present invention can be exhibited.

  In the seventh to thirteenth embodiments of the present invention described above, the electrostatic protection elements 107, 117, 127, 134b, 147, 157, and 179 have been described using varistors mainly composed of SiC. Other than this, for example, even when a varistor mainly composed of ZnO, a protective element made of a metal powder and a resin, or the like is used, the same as in Embodiments 7 to 13 of the present invention. It has an effect.

  In the seventh embodiment of the present invention, as shown in FIG. 27, a sandwich structure in which the electrostatic protection element 107 is sandwiched between the first electrostatic protection element extraction electrode 108 and the second electrostatic protection element extraction electrode 109. However, the present invention is not limited to this connection structure. For example, as shown in FIG. 50, the first and second electrostatic protection element extraction electrodes 108 and 109 are connected to the substrate 101. The gap is formed on one surface of the electrode, and the electrostatic protection element 107 is formed on the first and second electrostatic protection element extraction electrodes 108 and 109 so as to fill the gap. You may make it plan.

  In the ninth embodiment of the present invention, as shown in FIG. 33, electrical connection is achieved with a sandwich structure in which the capacitive element 124 is sandwiched between the first extraction electrode 122 and the second extraction electrode 123. However, the present invention is not limited to this connection structure. For example, as shown in FIG. 51, first and second extraction electrodes 122 and 123 are formed with a gap on one surface of the substrate 121. The gap may be electrically connected with a gap structure in which a capacitive element 124 is formed on the first and second extraction electrodes 122 and 123 so as to fill the gap.

  Furthermore, in Embodiment 10 of the present invention, as shown in FIG. 35, a sandwich structure in which a mixture 134 including a capacitive element and a protective element is sandwiched between a first extraction electrode 132 and a second extraction electrode 133. However, the present invention is not limited to this connection structure. For example, as shown in FIG. 52, the first and second extraction electrodes 132 and 133 are connected to one surface of the substrate 131. A gap structure is formed in which a mixture 134 including a capacitive element and a protective element is formed on the first and second extraction electrodes 132 and 133 so as to fill the gap. You may make it plan.

  Furthermore, in the eleventh embodiment of the present invention, as shown in FIGS. 38 and 39, the electrostatic protection element 147 is composed of the first electrostatic protection element extraction electrode 148 and the second electrostatic protection element extraction electrode 149. The sandwiched sandwich structure is used for electrical connection. However, the present invention is not limited to this connection structure. For example, as shown in FIGS. 53 and 54, the first and second electrostatic protection element take-out electrodes 148, 149 are formed with a gap on one surface of the substrate 141, and the electrostatic protection element 147 is formed on the first and second electrostatic protection element take-out electrodes 148, 149 so as to fill the gap. Electrical connection may be achieved with a structure.

  In the twelfth embodiment of the present invention, as shown in FIGS. 41 and 42, the electrostatic protection element 157 is replaced with the first and third electrostatic protection element extraction electrodes 158 and 159 and the second electrostatic protection element extraction. The electrical connection is achieved by a sandwich structure sandwiched between the electrodes 160, but the present invention is not limited to this connection structure. For example, as shown in FIGS. 55 and 56, the first, second, second 3 are formed with a gap on one surface of the substrate 151, and the first, second and third electrostatic protection element take-out electrodes 158, 160 are formed so as to fill the gap. , 159 may be electrically connected with a gap structure in which an electrostatic protection element 157 is formed.

  In the thirteenth embodiment of the present invention, as shown in FIG. 44, a sandwich structure in which the electrostatic protection element 179 is sandwiched between the first electrostatic protection element extraction electrode 180 and the second electrostatic protection element extraction electrode 181. However, the present invention is not limited to this connection structure. For example, as shown in FIG. 57, the first electrostatic protection element extraction electrode 180 and the second electrostatic protection element are extracted. The electrode 181 is formed with a gap on one surface of the substrate 171, and the electrostatic protection element is placed on the first electrostatic protection element extraction electrode 180 and the second electrostatic protection element extraction electrode 181 so as to fill the gap. The electrical connection may be achieved with a gap structure in which 179 is formed.

  Since the chip component with the electrostatic protection function according to the present invention has a high electrostatic pulse withstand capability, and the electrostatic protection element is formed on the substrate on which the capacitive element is formed, the electrostatic protective element is referred to as the capacitive element. The number of parts does not increase unlike the case of a separately provided device, which has the effect of reducing costs and downsizing the equipment, and requires countermeasures against static electricity such as mobile phones and televisions. It can be applied to a simple circuit.

The perspective view of the chip component with an electrostatic protection function in Embodiment 1 of this invention 2-2 line sectional drawing in FIG. Equivalent circuit diagram of chip parts with the same electrostatic protection function The perspective view of the chip component with an electrostatic protection function in Embodiment 2 of this invention Cross-sectional view of the chip component with the same electrostatic protection function The perspective view seen from the upper surface side of the chip component with the electrostatic protection function in Embodiment 3 of the present invention The perspective view seen from the back side of the chip part with the same electrostatic protection function Cross-sectional view of the chip component with the same electrostatic protection function The perspective view of the chip component with an electrostatic protection function in Embodiment 4 of this invention Cross-sectional view of the chip component with the same electrostatic protection function Magnified schematic diagram between the extraction electrodes of the chip component with the same electrostatic protection function Equivalent circuit diagram in the enlarged schematic diagram between the extraction electrodes of the chip component with the same electrostatic protection function The perspective view of the chip component with an electrostatic protection function in Embodiment 5 of this invention 14-14 sectional view in FIG. Equivalent circuit diagram of chip parts with the same electrostatic protection function The perspective view of the chip component with an electrostatic protection function in Embodiment 6 of this invention 17-17 sectional view in FIG. Equivalent circuit diagram of chip parts with the same electrostatic protection function Sectional drawing which shows the modification of FIG. Sectional drawing which shows the modification of FIG. Sectional drawing which shows the modification of FIG. The perspective view which shows the modification of FIG. Sectional drawing which shows the modification of FIG. The perspective view which shows the modification of FIG. Sectional drawing which shows the modification of FIG. The perspective view of the chip component with an electrostatic protection function in Embodiment 7 of this invention 27 is a sectional view taken along line 27-27 in FIG. Equivalent circuit diagram of chip parts with the same electrostatic protection function The perspective view of the chip component with an electrostatic protection function in Embodiment 8 of this invention Cross-sectional view of the chip component with the same electrostatic protection function The perspective view seen from the upper surface side of the chip component with the electrostatic protection function in Embodiment 9 of the present invention The perspective view seen from the back side of the chip part with the same electrostatic protection function Cross-sectional view of the chip component with the same electrostatic protection function The perspective view of the chip component with an electrostatic protection function in Embodiment 10 of this invention Cross-sectional view of the chip component with the same electrostatic protection function Magnified schematic diagram between the extraction electrodes of the chip component with the same electrostatic protection function Equivalent circuit diagram in the enlarged schematic diagram between the extraction electrodes of the chip component with the same electrostatic protection function The perspective view of the chip component with an electrostatic protection function in Embodiment 11 of this invention 39 is a sectional view taken along line 39-39 in FIG. Equivalent circuit diagram of chip parts with the same electrostatic protection function The perspective view of the chip component with an electrostatic protection function in Embodiment 12 of this invention 42 is a sectional view taken along line 42-42 in FIG. Equivalent circuit diagram of chip parts with the same electrostatic protection function The perspective view of the chip component with an electrostatic protection function in Embodiment 13 of this invention Equivalent circuit diagram of chip parts with the same electrostatic protection function Circuit diagram showing circuit A as an application example of the chip component with the electrostatic protection function Circuit diagram showing circuit B as an application example of the chip component with the electrostatic protection function The circuit diagram which shows the modification of the chip component with an electrostatic protection function in Embodiment 13 of this invention The circuit diagram which shows the modification of the chip component with an electrostatic protection function in Embodiment 13 of this invention Sectional drawing which shows the modification of FIG. Sectional drawing which shows the modification of FIG. Sectional drawing which shows the modification of FIG. The perspective view which shows the modification of FIG. Sectional drawing which shows the modification of FIG. The perspective view which shows the modification of FIG. Sectional drawing which shows the modification of FIG. Sectional drawing which shows the modification of FIG.

Claims (16)

A substrate,
Circuit elements formed on the substrate;
An electrostatic protection element formed in parallel with the circuit element on the substrate;
A chip component with an electrostatic protection function, comprising: a pair of external electrodes formed on both ends of the substrate for connecting the circuit element and the protection element to an external circuit.   The chip component with electrostatic protection function according to claim 1, wherein the circuit element is a resistor. The resistor is formed using a resistor paste,
3. The chip part with an electrostatic protection function according to claim 2, wherein the electrostatic protection element is formed using an electrostatic protection element paste. A substrate,
A resistor formed on the substrate;
An electrostatic protection element formed on the substrate;
A chip component with an electrostatic protection function, comprising: a pair of external electrodes formed on both ends of the substrate for connecting the resistor and the protection element to an external circuit.   The said resistor and the said electrostatic protection element are integrally formed using the mixed paste containing a resistor powder, electrostatic protection element powder, and glass frit, The electrostatic protection function of Claim 4 characterized by the above-mentioned. Chip parts.   2. The chip component with electrostatic protection function according to claim 1, wherein the circuit element is a capacitive element. The capacitive element is formed using a capacitive element paste,
The chip part with an electrostatic protection function according to claim 6, wherein the electrostatic protection element is formed using an electrostatic protection element paste. A substrate,
A capacitive element formed on the substrate;
An electrostatic protection element formed on the substrate;
A chip component with an electrostatic protection function, comprising: a pair of external electrodes formed on both ends of the substrate for connecting the capacitive element and the protective element to an external circuit.   9. The electrostatic protection function according to claim 8, wherein the capacitive element and the electrostatic protection element are integrally formed using a mixed paste including capacitive element powder, electrostatic protection element powder, and glass frit. Chip parts. Both ends of the circuit element are electrically connected to the pair of external electrodes via first and second circuit element extraction electrodes formed on the substrate, respectively.
2. The chip with an electrostatic protection function according to claim 1, wherein the electrostatic protection element is electrically connected to the pair of external electrodes via first and second electrostatic protection element take-out electrodes. parts. Both ends of the circuit element are electrically connected to first and second extraction electrodes respectively connected to the pair of external electrodes,
The electrostatic protection element is stacked on the circuit element and formed in parallel, and is electrically connected to the third extraction electrode and the second extraction electrode connected to the first extraction electrode. The chip component with electrostatic protection function according to claim 1, wherein the chip component has a static electricity protection function. The circuit element is formed on one surface of the substrate,
Both ends of the circuit element are electrically connected to the pair of external electrodes via first and second circuit element extraction electrodes formed on one surface of the substrate, respectively.
2. The chip component with an electrostatic protection function according to claim 1, wherein the electrostatic protection element is formed in parallel on the other surface of the substrate so as to substantially face the circuit element. Both ends of the circuit element are electrically connected to first and second extraction electrodes respectively connected to the pair of external electrodes,
The electrostatic protection element is electrically connected to one of the pair of external electrodes via a first protection element extraction electrode, and is connected to the substrate via a second protection element extraction electrode. 2. The chip part with electrostatic protection function according to claim 1, wherein the chip part is electrically connected to a side electrode formed on the side part.   The electrostatic protection according to claim 13, wherein the electrostatic protection element is further electrically connected to the other external electrode of the pair of external electrodes via a third protective element extraction electrode. Chip component with function.   14. The chip part with electrostatic protection function according to claim 13, wherein the side electrode is formed on both sides of the substrate. The circuit element is a resistor,
Further, the capacitive element electrically connected to the one external electrode via the capacitive element take-out electrode and electrically connected to the side electrode via the second protective element take-out electrode, The chip component with electrostatic protection function according to claim 14, wherein the chip component is formed in parallel with the resistor on a substrate.

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