JPS6490568A - Solar cell - Google Patents

Solar cell

Info

Publication number
JPS6490568A
JPS6490568A JP62248434A JP24843487A JPS6490568A JP S6490568 A JPS6490568 A JP S6490568A JP 62248434 A JP62248434 A JP 62248434A JP 24843487 A JP24843487 A JP 24843487A JP S6490568 A JPS6490568 A JP S6490568A
Authority
JP
Japan
Prior art keywords
type
electrode
layer
type gaas
gaas
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP62248434A
Other languages
Japanese (ja)
Inventor
Toshio Murotani
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Electric Corp
Original Assignee
Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Priority to JP62248434A priority Critical patent/JPS6490568A/en
Publication of JPS6490568A publication Critical patent/JPS6490568A/en
Pending legal-status Critical Current

Links

Classifications

    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/544—Solar cells from Group III-V materials

Landscapes

  • Photovoltaic Devices (AREA)

Abstract

PURPOSE:To decrease leaves in a P-N junction surface by forming a P-type semiconductor region having band gap energy smaller than at least GaAs between a P-type GaAs region and a P electrode shaped onto the P-type GaAs region. CONSTITUTION:An N-type GaAs layer 2, a P-type GaAs layer 3, a P-type AlGaAs layer 4 and P-type GaAs regions 5 are formed onto an N-type semiconductor substrate 1. An antireflection film 7 and P electrodes 8 on the layer 4 and an N electrode 9 are shaped. P-type InGaAs regions 6 having low contact resistance are formed as contact layers being in contact with the P electrodes 8. Accordingly, an electrode area is reduced, and not only conversion efficiency can be improved but also the ohmic electrode having a sufficiently low resistance value can be formed even through alloying heat treatment at a high temperature.
JP62248434A 1987-10-01 1987-10-01 Solar cell Pending JPS6490568A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP62248434A JPS6490568A (en) 1987-10-01 1987-10-01 Solar cell

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP62248434A JPS6490568A (en) 1987-10-01 1987-10-01 Solar cell

Publications (1)

Publication Number Publication Date
JPS6490568A true JPS6490568A (en) 1989-04-07

Family

ID=17178064

Family Applications (1)

Application Number Title Priority Date Filing Date
JP62248434A Pending JPS6490568A (en) 1987-10-01 1987-10-01 Solar cell

Country Status (1)

Country Link
JP (1) JPS6490568A (en)

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