JPS6489351A - Semiconductor package - Google Patents

Semiconductor package

Info

Publication number
JPS6489351A
JPS6489351A JP24548287A JP24548287A JPS6489351A JP S6489351 A JPS6489351 A JP S6489351A JP 24548287 A JP24548287 A JP 24548287A JP 24548287 A JP24548287 A JP 24548287A JP S6489351 A JPS6489351 A JP S6489351A
Authority
JP
Japan
Prior art keywords
heat
cap
substrate
fins
wax
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP24548287A
Other languages
Japanese (ja)
Other versions
JP2523688B2 (en
Inventor
Masaru Ishizuka
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp filed Critical Toshiba Corp
Priority to JP62245482A priority Critical patent/JP2523688B2/en
Publication of JPS6489351A publication Critical patent/JPS6489351A/en
Application granted granted Critical
Publication of JP2523688B2 publication Critical patent/JP2523688B2/en
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Abstract

PURPOSE:To preferably cool generated heat at the normal time even if a thermal load is temporarily increased by sealing wax in a sealed space formed between a cap and a substrate, and further connecting fins between the cap and the substrate. CONSTITUTION:The face of a substrate 2, disposed at opposite side to the face for placing a semiconductor IC chip 1 is thermally connected to a cap 3 with fins 11. With such a configuration, when the chip 1 generates heat, the heat is transferred to the substrate 2. The heat transferred to the substrate 2 is transmitted at one side to the mixture 4 of wax and powder metal, and at the other to the cap 3 through the fins 11. In this case, when the quantity of the generated heat of the chip 1 is abruptly increased, the wax is melted by the heat at that time, the heat is absorbed by the phase change, thereby maintaining the temperature constant. On the other hand, if the generated heat is of the degree not melting the wax, it is transferred to the cap 3 by thermal conduction of the fins 11 and the metal powder, and dissipated through the cap 3.
JP62245482A 1987-09-29 1987-09-29 Semiconductor package Expired - Lifetime JP2523688B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP62245482A JP2523688B2 (en) 1987-09-29 1987-09-29 Semiconductor package

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP62245482A JP2523688B2 (en) 1987-09-29 1987-09-29 Semiconductor package

Publications (2)

Publication Number Publication Date
JPS6489351A true JPS6489351A (en) 1989-04-03
JP2523688B2 JP2523688B2 (en) 1996-08-14

Family

ID=17134314

Family Applications (1)

Application Number Title Priority Date Filing Date
JP62245482A Expired - Lifetime JP2523688B2 (en) 1987-09-29 1987-09-29 Semiconductor package

Country Status (1)

Country Link
JP (1) JP2523688B2 (en)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5844310A (en) * 1996-08-09 1998-12-01 Hitachi Metals, Ltd. Heat spreader semiconductor device with heat spreader and method for producing same
EP1162659A2 (en) * 2000-06-08 2001-12-12 MERCK PATENT GmbH Use of PCM in heat sinks for electronic devices
JP2006220537A (en) * 2005-02-10 2006-08-24 Three M Innovative Properties Co Water leakage sensor
JP2009283861A (en) * 2008-05-26 2009-12-03 Toyota Central R&D Labs Inc Semiconductor device

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5844310A (en) * 1996-08-09 1998-12-01 Hitachi Metals, Ltd. Heat spreader semiconductor device with heat spreader and method for producing same
US6032362A (en) * 1996-08-09 2000-03-07 Hitachi Metals, Ltd. Method for producing a heat spreader and semiconductor device with a heat spreader
EP1162659A2 (en) * 2000-06-08 2001-12-12 MERCK PATENT GmbH Use of PCM in heat sinks for electronic devices
JP2006220537A (en) * 2005-02-10 2006-08-24 Three M Innovative Properties Co Water leakage sensor
JP2009283861A (en) * 2008-05-26 2009-12-03 Toyota Central R&D Labs Inc Semiconductor device

Also Published As

Publication number Publication date
JP2523688B2 (en) 1996-08-14

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