JPS648759U - - Google Patents

Info

Publication number
JPS648759U
JPS648759U JP1987103780U JP10378087U JPS648759U JP S648759 U JPS648759 U JP S648759U JP 1987103780 U JP1987103780 U JP 1987103780U JP 10378087 U JP10378087 U JP 10378087U JP S648759 U JPS648759 U JP S648759U
Authority
JP
Japan
Prior art keywords
emitting diode
light emitting
diode element
chip
insulating substrate
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP1987103780U
Other languages
English (en)
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Priority to JP1987103780U priority Critical patent/JPS648759U/ja
Publication of JPS648759U publication Critical patent/JPS648759U/ja
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/42—Wire connectors; Manufacturing methods related thereto
    • H01L24/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L24/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481—Disposition
    • H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/48225—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
    • H01L2224/48227—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation connecting the wire to a bond pad of the item

Landscapes

  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)

Description

【図面の簡単な説明】
第１図は本考案の一実施例に係るチツプ型ＬＥ
Ｄを示す斜視図、第２図は第１図に示すチツプ型
ＬＥＤのＡ−Ａ断面図、第３図は第１図に示すチ
ツプ型ＬＥＤのＢ−Ｂ断面図、第４図及び第５図
は第１図に示すチツプ型ＬＥＤの応用例を示す図
、第６図は第１図に示すチツプ型ＬＥＤの一部変
更例を示す斜視図、第７図は従来のチツプ型ＬＥ
Ｄを示す斜視図、第８図は第７図に示すチツプ型
ＬＥＤの実装例を示す図である。 １，２，１１，１２……電極パターン、３，１
３……絶縁基板、４，１４……ＬＥＤ素子、５，
１５……レンズ部、１５ａ……上面、１５ｂ……
側面、１５ｃ，１５ｄ……左右側面、１６……反
射部、１６ａ，１６ｂ，１６ｃ……反射面。

Claims (1)

  1. 【実用新案登録請求の範囲】 絶縁基板と、該絶縁基板上に設けられた電極パ
    ターンと、該電極パターン上に実装された発光ダ
    イオード素子とからなるチツプ型発光ダイオード
    において、 前記絶縁基板に実装された発光ダイオード素子
    を透光性樹脂により被覆してレンズ部を形成し、
    該レンズ部の側方の一面を除くすべての面を囲む
    ように反射部を設け、前記発光ダイオード素子が
    発する光を前記側方の一面に集めて照射するよう
    にしたことを特徴とするチツプ型発光ダイオード
    。
JP1987103780U 1987-07-06 1987-07-06 Pending JPS648759U (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP1987103780U JPS648759U (ja) 1987-07-06 1987-07-06

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP1987103780U JPS648759U (ja) 1987-07-06 1987-07-06

Publications (1)

Publication Number Publication Date
JPS648759U true JPS648759U (ja) 1989-01-18

Family

ID=31334916

Family Applications (1)

Application Number Title Priority Date Filing Date
JP1987103780U Pending JPS648759U (ja) 1987-07-06 1987-07-06

Country Status (1)

Country Link
JP (1) JPS648759U (ja)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH03127874A (ja) * 1989-10-05 1991-05-30 Dialight Corp サーフェスマウントｌｅｄパッケージ
JP2001094157A (ja) * 1999-09-24 2001-04-06 Sharp Corp チップ部品型発光ダイオードおよびその製造方法
JP2009527122A (ja) * 2006-02-14 2009-07-23 エルジー イノテック カンパニー リミテッド 発光装置及びその製造方法

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5829857B2 (ja) * 1976-10-29 1983-06-25 レブロン・インコ−ポレイテツド 感温装置

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5829857B2 (ja) * 1976-10-29 1983-06-25 レブロン・インコ−ポレイテツド 感温装置

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH03127874A (ja) * 1989-10-05 1991-05-30 Dialight Corp サーフェスマウントｌｅｄパッケージ
JP2001094157A (ja) * 1999-09-24 2001-04-06 Sharp Corp チップ部品型発光ダイオードおよびその製造方法
JP2009527122A (ja) * 2006-02-14 2009-07-23 エルジー イノテック カンパニー リミテッド 発光装置及びその製造方法
JP2012134531A (ja) * 2006-02-14 2012-07-12 Lg Innotek Co Ltd 発光装置
US8269224B2 (en) 2006-02-14 2012-09-18 Lg Innotek Co., Ltd. Light emitting device and method for manufacturing the same
US9455385B2 (en) 2006-02-14 2016-09-27 Lg Innotek Co., Ltd. Light emitting device and method for manufacturing the same

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